-
MoRS: An Approximate Fault Modelling Framework for Reduced-Voltage SRAMs
Authors:
İsmail Emir Yüksel,
Behzad Salami,
Oğuz Ergin,
Osman Sabri Ünsal,
Adrian Cristal Kestelman
Abstract:
On-chip memory (usually based on Static RAMs-SRAMs) are crucial components for various computing devices including heterogeneous devices, e.g., GPUs, FPGAs, ASICs to achieve high performance. Modern workloads such as Deep Neural Networks (DNNs) running on these heterogeneous fabrics are highly dependent on the on-chip memory architecture for efficient acceleration. Hence, improving the energy-effi…
▽ More
On-chip memory (usually based on Static RAMs-SRAMs) are crucial components for various computing devices including heterogeneous devices, e.g., GPUs, FPGAs, ASICs to achieve high performance. Modern workloads such as Deep Neural Networks (DNNs) running on these heterogeneous fabrics are highly dependent on the on-chip memory architecture for efficient acceleration. Hence, improving the energy-efficiency of such memories directly leads to an efficient system. One of the common methods to save energy is undervolting i.e., supply voltage underscaling below the nominal level. Such systems can be safely undervolted without incurring faults down to a certain voltage limit. This safe range is also called voltage guardband. However, reducing voltage below the guardband level without decreasing frequency causes timing-based faults.
In this paper, we propose MoRS, a framework that generates the first approximate undervolting fault model using real faults extracted from experimental undervolting studies on SRAMs to build the model. We inject the faults generated by MoRS into the on-chip memory of the DNN accelerator to evaluate the resilience of the system under the test. MoRS has the advantage of simplicity without any need for high-time overhead experiments while being accurate enough in comparison to a fully randomly-generated fault injection approach. We evaluate our experiment in popular DNN workloads by map** weights to SRAMs and measure the accuracy difference between the output of the MoRS and the real data. Our results show that the maximum difference between real fault data and the output fault model of MoRS is 6.21%, whereas the maximum difference between real data and random fault injection model is 23.2%. In terms of average proximity to the real data, the output of MoRS outperforms the random fault injection approach by 3.21x.
△ Less
Submitted 19 July, 2022; v1 submitted 12 October, 2021;
originally announced October 2021.
-
Understanding Power Consumption and Reliability of High-Bandwidth Memory with Voltage Underscaling
Authors:
Seyed Saber Nabavi Larimi,
Behzad Salami,
Osman S. Unsal,
Adrian Cristal Kestelman,
Hamid Sarbazi-Azad,
Onur Mutlu
Abstract:
Modern computing devices employ High-Bandwidth Memory (HBM) to meet their memory bandwidth requirements. An HBM-enabled device consists of multiple DRAM layers stacked on top of one another next to a compute chip (e.g. CPU, GPU, and FPGA) in the same package. Although such HBM structures provide high bandwidth at a small form factor, the stacked memory layers consume a substantial portion of the p…
▽ More
Modern computing devices employ High-Bandwidth Memory (HBM) to meet their memory bandwidth requirements. An HBM-enabled device consists of multiple DRAM layers stacked on top of one another next to a compute chip (e.g. CPU, GPU, and FPGA) in the same package. Although such HBM structures provide high bandwidth at a small form factor, the stacked memory layers consume a substantial portion of the package's power budget. Therefore, power-saving techniques that preserve the performance of HBM are desirable. Undervolting is one such technique: it reduces the supply voltage to decrease power consumption without reducing the device's operating frequency to avoid performance loss. Undervolting takes advantage of voltage guardbands put in place by manufacturers to ensure correct operation under all environmental conditions. However, reducing voltage without changing frequency can lead to reliability issues manifested as unwanted bit flips. In this paper, we provide the first experimental study of real HBM chips under reduced-voltage conditions. We show that the guardband regions for our HBM chips constitute 19% of the nominal voltage. Pushing the supply voltage down within the guardband region reduces power consumption by a factor of 1.5X for all bandwidth utilization rates. Pushing the voltage down further by 11% leads to a total of2.3X power savings at the cost of unwanted bit flips. We explore and characterize the rate and types of these reduced-voltage-induced bit flips and present a fault map that enables the possibility of a three-factor trade-off among power, memory capacity, and fault rate.
△ Less
Submitted 30 December, 2020;
originally announced January 2021.
-
Exceeding Conservative Limits: A Consolidated Analysis on Modern Hardware Margins
Authors:
George Papadimitriou,
Athanasios Chatzidimitriou,
Dimitris Gizopoulos,
Vijay Janapa Reddi,
**gwen Leng,
Behzad Salami,
Osman S. Unsal,
Adrian Cristal Kestelman
Abstract:
Modern large-scale computing systems (data centers, supercomputers, cloud and edge setups and high-end cyber-physical systems) employ heterogeneous architectures that consist of multicore CPUs, general-purpose many-core GPUs, and programmable FPGAs. The effective utilization of these architectures poses several challenges, among which a primary one is power consumption. Voltage reduction is one of…
▽ More
Modern large-scale computing systems (data centers, supercomputers, cloud and edge setups and high-end cyber-physical systems) employ heterogeneous architectures that consist of multicore CPUs, general-purpose many-core GPUs, and programmable FPGAs. The effective utilization of these architectures poses several challenges, among which a primary one is power consumption. Voltage reduction is one of the most efficient methods to reduce power consumption of a chip. With the gallo** adoption of hardware accelerators (i.e., GPUs and FPGAs) in large datacenters and other large-scale computing infrastructures, a comprehensive evaluation of the safe voltage reduction levels for each different chip can be employed for efficient reduction of the total power. We present a survey of recent studies in voltage margins reduction at the system level for modern CPUs, GPUs and FPGAs. The pessimistic voltage guardbands inserted by the silicon vendors can be exploited in all devices for significant power savings. On average, voltage reduction can reach 12% in multicore CPUs, 20% in manycore GPUs and 39% in FPGAs.
△ Less
Submitted 1 June, 2020;
originally announced June 2020.
-
An Experimental Study of Reduced-Voltage Operation in Modern FPGAs for Neural Network Acceleration
Authors:
Behzad Salami,
Erhan Baturay Onural,
Ismail Emir Yuksel,
Fahrettin Koc,
Oguz Ergin,
Adrian Cristal Kestelman,
Osman S. Unsal,
Hamid Sarbazi-Azad,
Onur Mutlu
Abstract:
We empirically evaluate an undervolting technique, i.e., underscaling the circuit supply voltage below the nominal level, to improve the power-efficiency of Convolutional Neural Network (CNN) accelerators mapped to Field Programmable Gate Arrays (FPGAs). Undervolting below a safe voltage level can lead to timing faults due to excessive circuit latency increase. We evaluate the reliability-power tr…
▽ More
We empirically evaluate an undervolting technique, i.e., underscaling the circuit supply voltage below the nominal level, to improve the power-efficiency of Convolutional Neural Network (CNN) accelerators mapped to Field Programmable Gate Arrays (FPGAs). Undervolting below a safe voltage level can lead to timing faults due to excessive circuit latency increase. We evaluate the reliability-power trade-off for such accelerators. Specifically, we experimentally study the reduced-voltage operation of multiple components of real FPGAs, characterize the corresponding reliability behavior of CNN accelerators, propose techniques to minimize the drawbacks of reduced-voltage operation, and combine undervolting with architectural CNN optimization techniques, i.e., quantization and pruning. We investigate the effect of environmental temperature on the reliability-power trade-off of such accelerators. We perform experiments on three identical samples of modern Xilinx ZCU102 FPGA platforms with five state-of-the-art image classification CNN benchmarks. This approach allows us to study the effects of our undervolting technique for both software and hardware variability. We achieve more than 3X power-efficiency (GOPs/W) gain via undervolting. 2.6X of this gain is the result of eliminating the voltage guardband region, i.e., the safe voltage region below the nominal level that is set by FPGA vendor to ensure correct functionality in worst-case environmental and circuit conditions. 43% of the power-efficiency gain is due to further undervolting below the guardband, which comes at the cost of accuracy loss in the CNN accelerator. We evaluate an effective frequency underscaling technique that prevents this accuracy loss, and find that it reduces the power-efficiency gain from 43% to 25%.
△ Less
Submitted 30 December, 2020; v1 submitted 4 May, 2020;
originally announced May 2020.
-
TauRieL: Targeting Traveling Salesman Problem with a deep reinforcement learning inspired architecture
Authors:
Gorker Alp Malazgirt,
Osman S. Unsal,
Adrian Cristal Kestelman
Abstract:
In this paper, we propose TauRieL and target Traveling Salesman Problem (TSP) since it has broad applicability in theoretical and applied sciences. TauRieL utilizes an actor-critic inspired architecture that adopts ordinary feedforward nets to obtain a policy update vector $v$. Then, we use $v$ to improve the state transition matrix from which we generate the policy. Also, the state transition mat…
▽ More
In this paper, we propose TauRieL and target Traveling Salesman Problem (TSP) since it has broad applicability in theoretical and applied sciences. TauRieL utilizes an actor-critic inspired architecture that adopts ordinary feedforward nets to obtain a policy update vector $v$. Then, we use $v$ to improve the state transition matrix from which we generate the policy. Also, the state transition matrix allows the solver to initialize from precomputed solutions such as nearest neighbors. In an online learning setting, TauRieL unifies the training and the search where it can generate near-optimal results in seconds. The input to the neural nets in the actor-critic architecture are raw 2-D inputs, and the design idea behind this decision is to keep neural nets relatively smaller than the architectures with wide embeddings with the tradeoff of omitting any distributed representations of the embeddings. Consequently, TauRieL generates TSP solutions two orders of magnitude faster per TSP instance as compared to state-of-the-art offline techniques with a performance impact of 6.1\% in the worst case.
△ Less
Submitted 14 May, 2019;
originally announced May 2019.
-
Evaluating Built-in ECC of FPGA on-chip Memories for the Mitigation of Undervolting Faults
Authors:
Behzad Salami,
Osman S. Unsal,
Adrian Cristal Kestelman
Abstract:
Voltage underscaling below the nominal level is an effective solution for improving energy efficiency in digital circuits, e.g., Field Programmable Gate Arrays (FPGAs). However, further undervolting below a safe voltage level and without accompanying frequency scaling leads to timing related faults, potentially undermining the energy savings. Through experimental voltage underscaling studies on co…
▽ More
Voltage underscaling below the nominal level is an effective solution for improving energy efficiency in digital circuits, e.g., Field Programmable Gate Arrays (FPGAs). However, further undervolting below a safe voltage level and without accompanying frequency scaling leads to timing related faults, potentially undermining the energy savings. Through experimental voltage underscaling studies on commercial FPGAs, we observed that the rate of these faults exponentially increases for on-chip memories, or Block RAMs (BRAMs). To mitigate these faults, we evaluated the efficiency of the built-in Error-Correction Code (ECC) and observed that more than 90% of the faults are correctable and further 7% are detectable (but not correctable). This efficiency is the result of the single-bit type of these faults, which are then effectively covered by the Single-Error Correction and Double-Error Detection (SECDED) design of the built-in ECC. Finally, motivated by the above experimental observations, we evaluated an FPGA-based Neural Network (NN) accelerator under low-voltage operations, while built-in ECC is leveraged to mitigate undervolting faults and thus, prevent NN significant accuracy loss. In consequence, we achieve 40% of the BRAM power saving through undervolting below the minimum safe voltage level, with a negligible NN accuracy loss, thanks to the substantial fault coverage by the built-in ECC.
△ Less
Submitted 29 March, 2019;
originally announced March 2019.