Showing 1–42 of 42 results for author: Linfield, E H

Ultrafast (10 GHz) mid-IR modulator based on ultra-fast electrical switching of the light-matter coupling

Authors: Mario Malerba, Stefano Pirotta, Guy Aubin, Luca Lucia, Mathieu Jeannin, Jean-Michel Manceau, Adel Bousseksou, Quyang Lin, Jean-Francois Lampin, Emilien Peytavit, Stefano Barbieri, Lianhe Li, Giles Davies, Edmund H. Linfield, Raffaele Colombelli

Abstract: We demonstrate a free-space amplitude modulator for mid-infrared radiation (lambda=9.6 um) that operates at room temperature up to at least 20 GHz (above the -3dB cutoff frequency measured at 8.2 GHz). The device relies on the ultra-fast transition between weak and strong-coupling regimes induced by the variation of the applied bias voltage. Such transition induces a modulation of the device refle… ▽ More We demonstrate a free-space amplitude modulator for mid-infrared radiation (lambda=9.6 um) that operates at room temperature up to at least 20 GHz (above the -3dB cutoff frequency measured at 8.2 GHz). The device relies on the ultra-fast transition between weak and strong-coupling regimes induced by the variation of the applied bias voltage. Such transition induces a modulation of the device reflectivity. It is made of a semiconductor heterostructure enclosed in a judiciously designed array of metal-metal optical resonators, that - all-together - behave as an electrically tunable surface. At negative bias, it operates in the weak light-matter coupling regime. Upon application of an appropriate positive bias, the quantum wells populate with electrons and the device transitions to the strong-coupling regime. The modulator transmission keeps linear with input RF power in the 0dBm - 9dBm range. The increase of optical powers up to 25 mW exhibit a weak beginning saturation a little bit below. △ Less

Submitted 26 June, 2024; originally announced June 2024.

Detection of strong light-matter interaction in a single nano-cavity with a thermal transducer

Authors: Mario Malerba, Simone Sotgiu, Andrea Schirato, Leonetta Baldassarre, Raymond Gillibert, Valeria Giliberti, Mathieu Jeannin, Jean-Michel Manceau, Lianhe Li, Alexander Giles Davies, Edmund H. Linfield, Alessandro Alabastri, Michele Ortolani, Raffaele Colombelli

Abstract: Recently, the concept of strong light-matter coupling has been demonstrated in semiconductor structures, and it is poised to revolutionize the design and implementation of components, including solid state lasers and detectors. We demonstrate an original nanospectroscopy technique that permits to study the light-matter interaction in single subwavelength-sized nano-cavities where far-field spectro… ▽ More Recently, the concept of strong light-matter coupling has been demonstrated in semiconductor structures, and it is poised to revolutionize the design and implementation of components, including solid state lasers and detectors. We demonstrate an original nanospectroscopy technique that permits to study the light-matter interaction in single subwavelength-sized nano-cavities where far-field spectroscopy is not possible using conventional techniques. We inserted a thin ($\approx$ 150 nm) polymer layer with negligible absorption in the mid-IR (5 $μ$m < $λ$ < 12 $μ$m) inside a metal-insulator-metal resonant cavity, where a photonic mode and the intersubband transition of a semiconductor quantum well are strongly coupled. The intersubband transition peaks at $λ$ = 8.3 $μ$m, and the nano-cavity is overall 270 nm thick. Acting as a non-perturbative transducer, the polymer layer introduces only a limited alteration of the optical response while allowing to reveal the optical power absorbed inside the concealed cavity. Spectroscopy of the cavity losses is enabled by the polymer thermal expansion due to heat dissipation in the active part of the cavity, and performed using an atomic force microscope (AFM). This innovative approach allows the typical anticrossing characteristic of the polaritonic dispersion to be identified in the cavity loss spectra at the single nano-resonator level. Results also suggest that near-field coupling of the external drive field to the top metal patch mediated by a metal-coated AFM probe tip is possible, and it enables the near-field map** of the cavity mode symmetry including in the presence of strong light-matter interaction. △ Less

Submitted 27 November, 2022; originally announced November 2022.

Precise determination of low energy electronuclear Hamiltonian for LiY$_{1-x}$Ho$_{x}$F$_{4}$

Authors: A. Beckert, R. I. Hermans, M. Grimm, J. R. Freeman, E. H. Linfield, A. G. Davies, M. Müller, H. Sigg, S. Gerber, G. Matmon, G. Aeppli

Abstract: We use complementary optical spectroscopy methods to directly measure the lowest crystal-field energies of the rare-earth quantum magnet LiY$_{1-x}$Ho$_{x}$F$_{4}$, including their hyperfine splittings, with more than 10 times higher resolution than previous work. We are able to observe energy level splittings due to the $^6\mathrm{Li}$ and $^7\mathrm{Li}$ isotopes, as well as non-equidistantly sp… ▽ More We use complementary optical spectroscopy methods to directly measure the lowest crystal-field energies of the rare-earth quantum magnet LiY$_{1-x}$Ho$_{x}$F$_{4}$, including their hyperfine splittings, with more than 10 times higher resolution than previous work. We are able to observe energy level splittings due to the $^6\mathrm{Li}$ and $^7\mathrm{Li}$ isotopes, as well as non-equidistantly spaced hyperfine transitions originating from dipolar and quadrupolar hyperfine interactions. We provide refined crystal field parameters and extract the dipolar and quadrupolar hyperfine constants ${A_J=0.02703\pm0.00003}$ $\textrm{cm}^{-1}$ and ${B= 0.04 \pm0.01}$ $\textrm{cm}^{-1}$, respectively. Thereupon we determine all crystal-field energy levels and magnetic moments of the $^5I_8$ ground state manifold, including the (non-linear) hyperfine corrections. The latter match the measurement-based estimates. The scale of the non-linear hyperfine corrections sets an upper bound for the inhomogeneous line widths that would still allow for unique addressing of a selected hyperfine transition. e.g. for quantum information applications. Additionally, we establish the far-infrared, low-temperature refractive index of LiY$_{1-x}$Ho$_{x}$F$_{4}$. △ Less

Submitted 16 December, 2020; originally announced December 2020.

Comments: 9 pages, 6 Figures, 3 Tables

Terahertz frequency combs exploiting an on-chip solution processed graphene-quantum cascade laser coupled-cavity architecture

Authors: F. P. Mezzapesa, K. Garrasi, J. Schmidt, L. Salemi, V. Pistore, L. Li, A. G. Davies, E. H. Linfield, M. Riesch, C. Jirauschek, T. Carey, F. Torrisi, A. C. Ferrari, M. S. Vitiello

Abstract: The ability to engineer quantum-cascade-lasers (QCLs) with ultrabroad gain spectra and with a full compensation of the group velocity dispersion, at Terahertz (THz) frequencies, is a fundamental need for devising monolithic and miniaturized optical frequency-comb-synthesizers (FCS) in the far-infrared. In a THz QCL four-wave mixing, driven by the intrinsic third-order susceptibility of the intersu… ▽ More The ability to engineer quantum-cascade-lasers (QCLs) with ultrabroad gain spectra and with a full compensation of the group velocity dispersion, at Terahertz (THz) frequencies, is a fundamental need for devising monolithic and miniaturized optical frequency-comb-synthesizers (FCS) in the far-infrared. In a THz QCL four-wave mixing, driven by the intrinsic third-order susceptibility of the intersubband gain medium, self-lock the optical modes in phase, allowing stable comb operation, albeit over a restricted dynamic range (~ 20% of the laser operational range). Here, we engineer miniaturized THz FCSs comprising a heterogeneous THz QCL integrated with a tightly-coupled on-chip solution-processed graphene saturable-absorber reflector that preserves phase-coherence between lasing modes even when four-wave mixing no longer provides dispersion compensation. This enables a high-power (8 mW) FCS with over 90 optical modes to be demonstrated, over more than 55% of the laser operational range. Furthermore, stable injection-locking is showed, paving the way to impact a number of key applications, including high-precision tuneable broadband-spectroscopy and quantum-metrology. △ Less

Submitted 23 November, 2020; originally announced November 2020.

Comments: 31 pages, 11 figures, to be published in ACS Photonics

Spin-valve Josephson junctions with perpendicular magnetic anisotropy for cryogenic memory

Authors: N. Satchell, P. M. Shepley, M. Algarni, M. Vaughan, E. Darwin, M. Ali, M. C. Rosamond, L. Chen, E. H. Linfield, B. J. Hickey, G. Burnell

Abstract: We demonstrate a Josephson junction with a weak link containing two ferromagnets, with perpendicular magnetic anisotropy and independent switching fields in which the critical current can be set by the mutual orientation of the two layers. Such pseudospin-valve Josephson junctions are a candidate cryogenic memory in an all superconducting computational scheme. Here, we use Pt/Co/Pt/CoB/Pt as the w… ▽ More We demonstrate a Josephson junction with a weak link containing two ferromagnets, with perpendicular magnetic anisotropy and independent switching fields in which the critical current can be set by the mutual orientation of the two layers. Such pseudospin-valve Josephson junctions are a candidate cryogenic memory in an all superconducting computational scheme. Here, we use Pt/Co/Pt/CoB/Pt as the weak link of the junction with $d_\text{Co} = 0.6$ nm, $d_\text{CoB} = 0.3$ nm, and $d_\text{Pt} = 5$ nm and obtain a $60\%$ change in the critical current for the two magnetization configurations of the pseudospin-valve. Ferromagnets with perpendicular magnetic anisotropy have advantages over magnetization in-plane systems which have been exclusively considered to this point, as in principle the magnetization and magnetic switching of layers in the junction should not affect the in-plane magnetic flux. △ Less

Submitted 13 January, 2020; v1 submitted 25 November, 2019; originally announced November 2019.

Comments: 5 pages, 3 figures

Journal ref: Appl. Phys. Lett. 116, 022601 (2020)

Heisenberg pseudo-exchange and emergent anisotropies in field-driven pinwheel artificial spin ice

Authors: Gary W. Paterson, Gavin M. Macauley, Yue Li, Rair Macêdo, Ciaran Ferguson, Sophie A. Morley, Mark C. Rosamond, Edmund H. Linfield, Christopher H. Marrows, Robert L. Stamps, Stephen McVitie

Abstract: Rotating all islands in square artificial spin ice (ASI) uniformly about their centres gives rise to the recently reported pinwheel ASI. At angles around 45$^\mathrm{o}$, the antiferromagnetic ordering changes to ferromagnetic and the magnetic configurations of the system exhibit near-degeneracy, making it particularly sensitive to small perturbations. We investigate through micromagnetic modellin… ▽ More Rotating all islands in square artificial spin ice (ASI) uniformly about their centres gives rise to the recently reported pinwheel ASI. At angles around 45$^\mathrm{o}$, the antiferromagnetic ordering changes to ferromagnetic and the magnetic configurations of the system exhibit near-degeneracy, making it particularly sensitive to small perturbations. We investigate through micromagnetic modelling the influence of dipolar fields produced by physically extended islands in field-driven magnetisation processes in pinwheel arrays, and compare the results to hysteresis experiments performed in-situ using Lorentz transmission electron microscopy. We find that magnetisation end-states induce a Heisenberg pseudo-exchange interaction that governs both the inter-island coupling and the resultant array reversal process. Symmetry reduction gives rise to anisotropies and array-corner mediated avalanche reversals through a cascade of nearest-neighbour (NN) islands. The symmetries of the anisotropy axes are related to those of the geometrical array but are misaligned to the array axes as a result of the correlated interactions between neighbouring islands. The NN dipolar coupling is reduced by decreasing the island size and, using this property, we track the transition from the strongly coupled regime towards the pure point dipole one and observe modification of the ferromagnetic array reversal process. Our results shed light on important aspects of the interactions in pinwheel ASI, and demonstrate a mechanism by which their properties may be tuned for use in a range of fundamental research and spintronic applications. △ Less

Submitted 20 October, 2019; v1 submitted 28 August, 2019; originally announced August 2019.

Comments: 14 pages, 13 figures; post revision

Journal ref: Phys. Rev. B 100, 174410 (2019)

Diameter-independent skyrmion Hall angle in the plastic flow regime observed in chiral magnetic multilayers

Authors: Katharina Zeissler, Simone Finizio, Craig Barton, Alexandra Huxtable, Jamie Massey, Jörg Raabe, Alexandr V. Sadovnikov, Sergey A. Nikitov, Richard Brearton, Thorsten Hesjedal, Gerrit van der Laan, Mark C. Rosamond, Edmund H. Linfield, Gavin Burnell, Christopher H. Marrows

Abstract: Magnetic skyrmions are topologically non-trivial nanoscale objects. Their topology, which originates in their chiral domain wall winding, governs their unique response to a motion-inducing force. When subjected to an electrical current, the chiral winding of the spin texture leads to a deflection of the skyrmion trajectory, characterized by an angle with respect to the applied force direction. Thi… ▽ More Magnetic skyrmions are topologically non-trivial nanoscale objects. Their topology, which originates in their chiral domain wall winding, governs their unique response to a motion-inducing force. When subjected to an electrical current, the chiral winding of the spin texture leads to a deflection of the skyrmion trajectory, characterized by an angle with respect to the applied force direction. This skyrmion Hall angle was believed to be skyrmion diameter-dependent. In contrast, our experimental study finds that within the plastic flow regime the skyrmion Hall angle is diameter-independent. At an average velocity of 6 $\pm$ 1 m/s the average skyrmion Hall angle was measured to be 9° $\pm$ 2°. In fact, in the plastic flow regime, the skyrmion dynamics is dominated by the local energy landscape such as materials defects and the local magnetic configuration. △ Less

Submitted 12 August, 2019; originally announced August 2019.

Phase domain boundary motion and memristance in gradient-doped FeRh nanopillars induced by spin injection

Authors: Rowan C. Temple, Mark C. Rosamond, Jamie R. Massey, Trevor P. Almeida, Edmund H. Linfield, Damien McGrouther, Stephen McVitie, Thomas A. Moore, Christopher H. Marrows

Abstract: The B2-ordered alloy FeRh shows a metamagnetic phase transition, transforming from antiferromagnetic (AF) to ferromagnetic (FM) order at a temperature $T_\mathrm{t} \sim 380 $~K in bulk. As well as temperature, the phase transition can be triggered by many means such as strain, chemical do**, or magnetic or electric fields. Its first-order nature means that phase coexistence is possible. Here we… ▽ More The B2-ordered alloy FeRh shows a metamagnetic phase transition, transforming from antiferromagnetic (AF) to ferromagnetic (FM) order at a temperature $T_\mathrm{t} \sim 380 $~K in bulk. As well as temperature, the phase transition can be triggered by many means such as strain, chemical do**, or magnetic or electric fields. Its first-order nature means that phase coexistence is possible. Here we show that a phase boundary in a 300~nm diameter nanopillar, controlled by a do** gradient during film growth, is moved by an electrical current in the direction of electron flow. We attribute this to spin injection from one magnetically ordered phase region into the other driving the phase transition in a region just next to the phase boundary. The associated change in resistance of the nanopillar shows memristive properties, suggesting potential applications as memory cells or artificial synapses in neuromorphic computing schemes. △ Less

Submitted 25 November, 2020; v1 submitted 9 May, 2019; originally announced May 2019.

High dynamic range, heterogeneous, terahertz quantum cascade lasers featuring thermally-tunable frequency comb operation over a broad current range

Authors: Katia Garrasi, Francesco P. Mezzapesa, Luca Salemi, Lianhe Li, Luigi Consolino, Saverio Bartalini, Paolo De Natale, A. Giles Davies, Edmund H. Linfield, Miriam S. Vitiello

Abstract: We report on the engineering of broadband quantum cascade lasers (QCLs) emitting at Terahertz (THz) frequencies, which exploit a heterogeneous active region scheme and have a current density dynamic range (Jdr) of 3.2, significantly larger than the state of the art, over a 1.3 THz bandwidth. We demonstrate that the devised broadband lasers operate as THz optical frequency comb synthesizers in cont… ▽ More We report on the engineering of broadband quantum cascade lasers (QCLs) emitting at Terahertz (THz) frequencies, which exploit a heterogeneous active region scheme and have a current density dynamic range (Jdr) of 3.2, significantly larger than the state of the art, over a 1.3 THz bandwidth. We demonstrate that the devised broadband lasers operate as THz optical frequency comb synthesizers in continuous wave, with a maximum optical output power of 4 mW (0.73 mW in the comb regime). Measurement of the intermode beatnote map reveals a clear dispersion-compensated frequency comb regime extending over a continuous 106 mA current range (current density dynamic range of 1.24), significantly larger than the state of the art reported under similar geometries, with a corresponding emission bandwidth of 1.05 THz ans a stable and narrow (4.15 KHz) beatnote detected with a signal-to-noise ratio of 34 dB. Analysis of the electrical and thermal beatnote tuning reveals a current-tuning coefficient ranging between 5 MHz/mA and 2.1 MHz/mA and a temperature-tuning coefficient of -4 MHz/K. The ability to tune the THz QCL combs over their full dynamic range by temperature and current paves the way for their use as powerful spectroscopy tool that can provide broad frequency coverage combined with high precision spectral accuracy. △ Less

Submitted 25 January, 2019; originally announced January 2019.

Journal ref: ACS Photonics, 2019, 6 (1), 73-78

Giant optical nonlinearity cancellation in quantum wells

Authors: S. Houver, A. Lebreton, T. A. S. Pereira, G. Xu, R. Colombelli, I. Kundu, L. H. Li, E. H. Linfield, A. G. Davies, J. Mangeney, J. Tignon, R. Ferreira, S. S. Dhillon

Abstract: Second-order optical nonlinearities can be greatly enhanced by orders of magnitude in resonantly excited nanostructures, theoretically predicted and experimentally investigated in a variety of semiconductor systems. These resonant nonlinearities continually attract attention, particularly in newly discovered materials, but tend not to be as efficient as currently predicted. This limits their explo… ▽ More Second-order optical nonlinearities can be greatly enhanced by orders of magnitude in resonantly excited nanostructures, theoretically predicted and experimentally investigated in a variety of semiconductor systems. These resonant nonlinearities continually attract attention, particularly in newly discovered materials, but tend not to be as efficient as currently predicted. This limits their exploitation in frequency conversion. Here, we present a clear-cut theoretical and experimental demonstration that the second-order nonlinear susceptibility can vary by orders of magnitude as a result of giant cancellation effects in systems with many confined quantum states. Using terahertz quantum cascade lasers as a model source to investigate interband and intersubband resonant nonlinearities, we show that these giant cancellations are a result of interfering second-order nonlinear contributions of light and heavy hole states. As well as of importance to understand and engineer the resonant optical properties of materials, this work can be employed as a new, extremely sensitive tool to elucidate the bandstructure properties of complex quantum well systems. △ Less

Submitted 4 January, 2019; originally announced January 2019.

Thermally and field-driven mobility of emergent magnetic charges in square artificial spin ice

Authors: Sophie A. Morley, Jose Maria Porro, Aleš Hrabec, Mark C. Rosamond, Edmund H. Linfield, Gavin Burnell, Mi-Young Im, Peter J. Fischer, Sean Langridge, Christopher H. Marrows

Abstract: Designing and constructing model systems that embody the statistical mechanics of frustration is now possible using nanotechnology. We have arranged nanomagnets on a two-dimensional square lattice to form an artificial spin ice, and studied its fractional excitations, emergent magnetic monopoles, and how they respond to a driving field using X-ray magnetic microscopy. We observe a regime in which… ▽ More Designing and constructing model systems that embody the statistical mechanics of frustration is now possible using nanotechnology. We have arranged nanomagnets on a two-dimensional square lattice to form an artificial spin ice, and studied its fractional excitations, emergent magnetic monopoles, and how they respond to a driving field using X-ray magnetic microscopy. We observe a regime in which the monopole drift velocity is linear in field above a critical field for the onset of motion. The temperature dependence of the critical field can be described by introducing an interaction term into the Bean-Livingston model of field-assisted barrier hop**. By analogy with electrical charge drift motion, we define and measure a monopole mobility that is larger both for higher temperatures and stronger interactions between nanomagnets. The mobility in this linear regime is described by a creep model of zero-dimensional charges moving within a network of quasi-one-dimensional objects. △ Less

Submitted 20 September, 2018; originally announced September 2018.

Comments: 10 pages, 5 figures

Effect of FePd alloy composition on the dynamics of artificial spin ice

Authors: Sophie A. Morley, Susan T. Riley, Jose-Maria Porro, Mark C. Rosamond, Edmund H. Linfield, John E. Cunningham, Sean Langridge, Christopher H. Marrows

Abstract: Artificial spin ices (ASI) are arrays of single domain nano-magnetic islands, arranged in geometries that give rise to frustrated magnetostatic interactions. It is possible to reach their ground state via thermal annealing. We have made square ASI using different FePd alloys to vary the magnetization via co-sputtering. From a polarized state the samples were incrementally heated and we measured th… ▽ More Artificial spin ices (ASI) are arrays of single domain nano-magnetic islands, arranged in geometries that give rise to frustrated magnetostatic interactions. It is possible to reach their ground state via thermal annealing. We have made square ASI using different FePd alloys to vary the magnetization via co-sputtering. From a polarized state the samples were incrementally heated and we measured the vertex population as a function of temperature using magnetic force microscopy. For the higher magnetization FePd sample, we report an onset of dynamics at $T = 493$ K, with a rapid collapse into $>90\%$ ground state vertices. In contrast, the low magnetization sample started to fluctuate at lower temperatures, $T = 393$ K and over a wider temperature range but only reached a maximum of $25\%$ of ground state vertices. These results indicate that the interaction strength, dynamic temperature range and pathways can be finely tuned using a simple co-sputtering process. In addition we have compared our experimental values of the blocking temperature to those predicted using the simple Néel-Brown two-state model and find a large discrepancy which we attribute to activation volumes much smaller than the island volume. △ Less

Submitted 4 December, 2017; originally announced December 2017.

Comments: 10 pages, 6 figures

Journal ref: Scientific Reports 8, 4750 (2018)

Magnetization dynamics of weakly interacting sub-100 nm square artificial spin ices

Authors: Jose M. Porro, Sophie Morley, Diego Alba Venero, Rair Macêdo, Mark C. Rosamond, Edmund H. Linfield, Robert L. Stamps, Christopher H. Marrows, Sean Langridge

Abstract: Artificial Spin Ice (ASI), consisting of a two dimensional array of nanoscale magnetic elements, provides a fascinating opportunity to observe the physics of out of equilibrium systems. Initial studies concentrated on the static, frozen state, whilst more recent studies have accessed the out-of-equilibrium dynamic, fluctuating state. This opens up exciting possibilities such as the observation of… ▽ More Artificial Spin Ice (ASI), consisting of a two dimensional array of nanoscale magnetic elements, provides a fascinating opportunity to observe the physics of out of equilibrium systems. Initial studies concentrated on the static, frozen state, whilst more recent studies have accessed the out-of-equilibrium dynamic, fluctuating state. This opens up exciting possibilities such as the observation of systems exploring their energy landscape through monopole quasiparticle creation, potentially leading to ASI magnetricity, and to directly observe unconventional phase transitions. In this work we have measured and analysed the magnetic relaxation of thermally active ASI systems by means of SQUID magnetometry. We have investigated the effect of the interaction strength on the magnetization dynamics at different temperatures in the range where the nanomagnets are thermally active and have observed that they follow an Arrhenius-type Néel-Brown behaviour. An unexpected negative correlation of the average blocking temperature with the interaction strength is also observed, which is supported by Monte Carlo simulations. The magnetization relaxation measurements show faster relaxation for more strongly coupled nanoelements with similar dimensions. The analysis of the stretching exponents obtained from the measurements suggest 1-D chain-like magnetization dynamics. This indicates that the nature of the interactions between nanoelements lowers the dimensionality of the ASI from 2-D to 1-D. Finally, we present a way to quantify the effective interaction energy of a square ASI system, and compare it to the interaction energy calculated from a simple dipole model and also to the magnetostatic energy computed with micromagnetic simulations. △ Less

Submitted 17 January, 2020; v1 submitted 9 October, 2017; originally announced October 2017.

Journal ref: Sci Rep 9, 19967 (2019)

Discrete Hall resistivity contribution from Néel skyrmions in multilayer nanodiscs

Authors: Katharina Zeissler, Simone Finizio, Kowsar Shahbazi, Jamie Massey, Fatma Al Ma`Mari, David M. Bracher, Armin Kleibert, Mark C. Rosamond, Edmund H. Linfield, Thomas A. Moore, Jörg Raabe, Gavin Burnell, Christopher H. Marrows

Abstract: Magnetic skyrmions are knot-like quasiparticles. They are candidates for non-volatile data storage in which information is moved between fixed read and write terminals. Read-out operation of skyrmion-based spintronic devices will rely upon electrical detection of a single magnetic skyrmion within a nanostructure. Here, we present Pt/Co/Ir nanodiscs which support skyrmions at room temperature. We m… ▽ More Magnetic skyrmions are knot-like quasiparticles. They are candidates for non-volatile data storage in which information is moved between fixed read and write terminals. Read-out operation of skyrmion-based spintronic devices will rely upon electrical detection of a single magnetic skyrmion within a nanostructure. Here, we present Pt/Co/Ir nanodiscs which support skyrmions at room temperature. We measured the Hall resistivity whilst simultaneously imaging the spin texture using magnetic scanning transmission x-ray microscopy (STXM). The Hall resistivity is correlated to both the presence and size of the skyrmion. The size-dependent part matches the expected anomalous Hall signal when averaging the magnetisation over the entire disc. We observed a resistivity contribution which only depends on the number and sign of skyrmion-like objects present in the disc. Each skyrmion gives rise to 22$\pm$2 nΩ cm irrespective of its size. This contribution needs to be considered in all-electrical detection schemes applied to skyrmion-based devices. △ Less

Submitted 7 August, 2018; v1 submitted 19 June, 2017; originally announced June 2017.

Comments: 13 pages, 3 figures

Spin-orbit interaction in InAs/GaSb heterostructures quantified by weak antilocalization

Authors: F. Herling, C. Morrison, C. S. Knox, S. Zhang, O. Newell, M. Myronov, E. H. Linfield, C. H. Marrows

Abstract: We study the spin-orbit interaction (SOI) in InAs/ GaSb and InAs quantum wells. We show through temperature- and gate-dependent magnetotransport measurements of weak antilocalization that the dominant spin-orbit relaxation mechanism in our low-mobility heterostructures is Elliott-Yafet and not Dyakonov-Perel in the form of the Rashba or Dresselhaus SOI as previously suggested. We compare our findi… ▽ More We study the spin-orbit interaction (SOI) in InAs/ GaSb and InAs quantum wells. We show through temperature- and gate-dependent magnetotransport measurements of weak antilocalization that the dominant spin-orbit relaxation mechanism in our low-mobility heterostructures is Elliott-Yafet and not Dyakonov-Perel in the form of the Rashba or Dresselhaus SOI as previously suggested. We compare our findings with recent work on this material system and show that the SOI length lies within the same range. The SOI length may be controlled using an electrostatic gate, opening up prospects for develo** spintronic applications. △ Less

Submitted 2 March, 2017; v1 submitted 30 October, 2016; originally announced October 2016.

Journal ref: Phys. Rev. B 95, 155307 (2017)

Excitation, detection, and electrostatic manipulation of terahertz-frequency range plasmons in a two-dimensional electron system

Authors: **gbo Wu, Alexander S. Mayorov, Christopher D. Wood, Divyang Mistry, Lianhe Li, Wilson Muchenje, Mark C. Rosamond, Li Chen, Edmund H. Linfield, A. Giles Davies, John E. Cunningham

Abstract: Terahertz time domain spectroscopy employing free-space radiation has frequently been used to probe the elementary excitations of low-dimensional systems. The diffraction limit blocks its use for the in-plane study of individual laterally defined nanostructures, however. Here, we demonstrate a planar terahertz-frequency plasmonic circuit in which photoconductive material is monolithically integrat… ▽ More Terahertz time domain spectroscopy employing free-space radiation has frequently been used to probe the elementary excitations of low-dimensional systems. The diffraction limit blocks its use for the in-plane study of individual laterally defined nanostructures, however. Here, we demonstrate a planar terahertz-frequency plasmonic circuit in which photoconductive material is monolithically integrated with a two-dimensional electron system. Plasmons with a broad spectral range (up to ~400 GHz) are excited by injecting picosecond-duration pulses, generated and detected by a photoconductive semiconductor, into a high mobility two-dimensional electron system. Using voltage modulation of a Schottky gate overlying the two-dimensional electron system, we form a tuneable plasmonic cavity, and observe electrostatic manipulation of the plasmon resonances. Our technique offers a direct route to access the picosecond dynamics of confined transport in a broad range of lateral nanostructures. △ Less

Submitted 24 June, 2015; originally announced June 2015.

Comments: 24 pages, 10 figures

Spin relaxation through Kondo scattering in Cu/Py lateral spin valves

Authors: J. T. Batley, M. C. Rosamond, M. Ali, E. H. Linfield, G. Burnell, B. J. Hickey

Abstract: The temperature dependence of the spin diffusion length typically reflects the scattering mechanism responsible for spin relaxation. Within non-magnetic metals it is reasonable to expect the Elliot-Yafet mechanism to play a role and thus the temperature dependence of the spin diffusion length might be inversely proportional to resistivity. In lateral spin valves measurements have found that at low… ▽ More The temperature dependence of the spin diffusion length typically reflects the scattering mechanism responsible for spin relaxation. Within non-magnetic metals it is reasonable to expect the Elliot-Yafet mechanism to play a role and thus the temperature dependence of the spin diffusion length might be inversely proportional to resistivity. In lateral spin valves measurements have found that at low temperatures the spin diffusion length unexpected decreases. By measuring the transport properties of lateral Py/Cu/Py spin valves fabricated with different purities of Cu, we extract a spin diffusion length which shows this suppression below 30K only in the presence of the Kondo effect. We have calculated the spin-relaxation rate and isolated the contributions from magnetic impurities. We find the spin-flip probability of a magnetic impurity to be 34%. Our semi-quantitative analysis demonstrates the dominant role of Kondo scattering in spin relaxation, even in low concentrations of order 1 p.p.m., and hence accounts for the reduction in spin diffusion length observed by ourselves and others. △ Less

Submitted 10 December, 2015; v1 submitted 28 April, 2015; originally announced April 2015.

Terahertz quantum cascade lasers with thin resonant-phonon depopulation active regions and surface-plasmon waveguides

Authors: M. Salih, P. Dean, A. Valavanis, S. P. Khanna, L. H. Li, J. E. Cunningham, A. G. Davies, E. H. Linfield

Abstract: We report three-well, resonant-phonon depopulation terahertz quantum cascade lasers with semi-insulating surface-plasmon waveguides and reduced active region (AR) thicknesses. Devices with thicknesses of 10, 7.5, 6, and 5 μm are compared in terms of threshold current density, maximum operating temperature, output power and AR temperature. Thinner ARs are technologically less demanding for epitaxia… ▽ More We report three-well, resonant-phonon depopulation terahertz quantum cascade lasers with semi-insulating surface-plasmon waveguides and reduced active region (AR) thicknesses. Devices with thicknesses of 10, 7.5, 6, and 5 μm are compared in terms of threshold current density, maximum operating temperature, output power and AR temperature. Thinner ARs are technologically less demanding for epitaxial growth and result in reduced electrical heating of devices. However, it is found that 7.5-μm-thick devices give the lowest electrical power densities at threshold, as they represent the optimal trade-off between low electrical resistance and low threshold gain. △ Less

Submitted 13 March, 2013; originally announced March 2013.

Comments: 16 pages, 6 figures

Journal ref: J. Appl. Phys. 113, 113110 (2013)

Radiative Recombination Spectra of Heavily p-Type delta-Doped Gaas/Alas MQWs

Authors: J. Kundrotas, A. Cerskus, G. Valusis, M. Lachab, S. P. Khanna, P. Harrison, E. H. Linfield

Abstract: We present a study of the photoluminescence (PL) properties of heavily Be delta-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible mechanisms for photocarriers recombination are discussed, with a particular focus on the peculiarities of the excitonic and free carriers-acceptors PL emissions occurring below and above the Mott metal-insulator transit… ▽ More We present a study of the photoluminescence (PL) properties of heavily Be delta-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible mechanisms for photocarriers recombination are discussed, with a particular focus on the peculiarities of the excitonic and free carriers-acceptors PL emissions occurring below and above the Mott metal-insulator transition. Moreover, based on a simple theoretical model, it is found that the critical impurities concentration to observe the Mott transition in the MQW samples exhibiting 15 nm wells width and 5 nm-thick barrier layers is about 3 10E12 cm-2. △ Less

Submitted 4 November, 2007; originally announced November 2007.

Comments: 4 pages, 2 figures; presented in the 13th International Symposium on Ultrafast Phenomena in Semiconductors, Vilnius, August 2007

Terahertz sensing by beryllium and silicon delta-doped GaAs/AlAs quantum wells

Authors: D. Seliuta, J. Kavaliauskas, B. Cechavicius, S. Balakauskas, G. Valusis, B. Sherliker, M. P. Halsall, P. Harrison, M. Lachab, S. P. Khanna, E. H. Linfield

Abstract: Selective sensing of terahertz (THz) radiation by beryllium and silicon delta-doped GaAs/AlAs multiple quantum wells (MQWs) is demonstrated. A sensitivity up to 0.3 V/W within 0.5{4.2 THz in silicon- and up to 1 V/W within 4.2-7.3 THz range in beryllium-doped MQWs at liquid helium temperatures is shown. The built-in electric fields as estimated from the observed Franz-Keldysh oscillations in pho… ▽ More Selective sensing of terahertz (THz) radiation by beryllium and silicon delta-doped GaAs/AlAs multiple quantum wells (MQWs) is demonstrated. A sensitivity up to 0.3 V/W within 0.5{4.2 THz in silicon- and up to 1 V/W within 4.2-7.3 THz range in beryllium-doped MQWs at liquid helium temperatures is shown. The built-in electric fields as estimated from the observed Franz-Keldysh oscillations in photoreflectance spectra were found to be located close to the cap and buffer layers of MQWs and vary from 18 kV/cm up to 49 kV/cm depending on the structure design. △ Less

Submitted 3 November, 2007; originally announced November 2007.

Comments: 6 pages, 3 figures

Terahertz detection with delta-doped GaAs/AlAs multiple quantum wells

Authors: D. Seliuta, B. Cechavicius, J. Kavaliauskas, G. Krivaite, I. Grigelionis, S. Balakauskas, G. Valusis, B. Sherliker, M. P. Halsall, M. Lachab, S. P. Khanna, P. Harrison, E. H. Linfield

Abstract: The authors demonstrate selective detection of terahertz radiation employing beryllium delta-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The Franz-Keldysh oscillations observed in photo- and electro-reflectance spectra allowed one to estimate built-in electric fields in the structures studied. It was found… ▽ More The authors demonstrate selective detection of terahertz radiation employing beryllium delta-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The Franz-Keldysh oscillations observed in photo- and electro-reflectance spectra allowed one to estimate built-in electric fields in the structures studied. It was found that the electric field strength in the cap layer region could vary from 10 kV/cm up to 26 kV/cm, depending on the structure design and temperature. △ Less

Submitted 3 November, 2007; originally announced November 2007.

Comments: 4 pages, 2 figures; presented in the 13th International Symposium on Ultrafast Phenomena in Semiconductors, Vilnius

Interaction Correction to the Longitudinal Conductivity and Hall Resistivity in High Quality Two-Dimensional GaAs Electron and Hole Systems

Authors: C. E. Yasin, T. L. Sobey, A. P. Micolich, A. R. Hamilton, M. Y. Simmons, L. N. Pfeiffer, K. W. West, E. H. Linfield, M. Pepper, D. A. Ritchie

Abstract: We present a systematic study of the corrections to both the longitudinal conductivity and Hall resistivity due to electron-electron interactions in high quality GaAs systems using the recent theory of Zala et al. [Phys. Rev. B 64, 214204 (2001)]. We demonstrate that the interaction corrections to the longitudinal conductivity and Hall resistivity predicted by the theory are consistent with each… ▽ More We present a systematic study of the corrections to both the longitudinal conductivity and Hall resistivity due to electron-electron interactions in high quality GaAs systems using the recent theory of Zala et al. [Phys. Rev. B 64, 214204 (2001)]. We demonstrate that the interaction corrections to the longitudinal conductivity and Hall resistivity predicted by the theory are consistent with each other. This suggests that the anomalous metallic drop in resistivity at B=0 is due to interaction effects and supports the theory of Zala et al. △ Less

Submitted 16 March, 2004; originally announced March 2004.

Comments: 5 pages, 4 figures

Shot Noise in Mesoscopic Transport Through Localised States

Authors: A. K. Savchenko, S. S. Safonov, S. H. Roshko, D. A. Bagrets, O. N. Jouravlev, Y. V. Nazarov, E. H. Linfield, D. A. Ritchie

Abstract: We show that shot noise can be used for studies of hop** and resonant tunnelling between localised electron states. In hop** via several states, shot noise is seen to be suppressed compared with its classical Poisson value $S_I=2eI$ ($I$ is the average current) and the suppression depends on the distribution of the barriers between the localised states. In resonant tunnelling through a singl… ▽ More We show that shot noise can be used for studies of hop** and resonant tunnelling between localised electron states. In hop** via several states, shot noise is seen to be suppressed compared with its classical Poisson value $S_I=2eI$ ($I$ is the average current) and the suppression depends on the distribution of the barriers between the localised states. In resonant tunnelling through a single impurity an enhancement of shot noise is observed. It has been established, both theoretically and experimentally, that a considerable increase of noise occurs due to Coulomb interaction between two resonant tunnelling channels. △ Less

Submitted 4 February, 2004; originally announced February 2004.

Comments: 7 pages, 5 figures; Proceedings of the 10th Conference on Hop** and Related Phenomena (Trieste 2003); requires Wiley style files (included)

Journal ref: phys. stat. sol. (b) 241, 26 (2004)

Interactions in high-mobility 2D electron and hole systems

Authors: E. A. Galaktionov, A. K. Savchenko, S. S. Safonov, Y. Y. Proskuryakov, L. Li, M. Pepper, M. Y. Simmons, D. A. Ritchie, E. H. Linfield, Z. D. Kvon

Abstract: Electron-electron interactions mediated by impurities are studied in several high-mobility two-dimensional (electron and hole) systems where the parameter $k_BTτ/\hbar $ changes from 0.1 to 10 ($τ$ is the momentum relaxation time). This range corresponds to the \textit{intermediate} and \textit {ballistic} regimes where only a few impurities are involved in electron-electron interactions. The in… ▽ More Electron-electron interactions mediated by impurities are studied in several high-mobility two-dimensional (electron and hole) systems where the parameter $k_BTτ/\hbar $ changes from 0.1 to 10 ($τ$ is the momentum relaxation time). This range corresponds to the \textit{intermediate} and \textit {ballistic} regimes where only a few impurities are involved in electron-electron interactions. The interaction correction to the Drude conductivity is detected in the temperature dependence of the resistance and in the magnetoresistance in parallel and perpendicular magnetic fields. The effects are analysed in terms of the recent theories of electron interactions developed for the ballistic regime. It is shown that the character of the fluctuation potential (short-range or long-range) is an important factor in the manifestation of electron-electron interactions in high-mobility 2D systems. △ Less

Submitted 4 February, 2004; originally announced February 2004.

Comments: 22 pages, 11 figures; to appear in proceedings of conference "Fundamental Problems of Mesoscopic Physics", Granada, Spain, 6-11 September, 2003

Three Key Questions on Fractal Conductance Fluctuations: Dynamics, Quantization and Coherence

Authors: A. P. Micolich, R. P. Taylor, T. P. Martin, R. Newbury, T. M. Fromhold, A. G. Davies, H. Linke, W. R. Tribe, L. D. Macks, C. G. Smith, E. H. Linfield, D. A. Ritchie

Abstract: Recent investigations of fractal conductance fluctuations (FCF) in electron billiards reveal crucial discrepancies between experimental behavior and the semiclassical Landauer-Buttiker (SLB) theory that predicted their existence. In particular, the roles played by the billiard's geometry, potential profile and the resulting electron trajectory distribution are not well understood. We present mea… ▽ More Recent investigations of fractal conductance fluctuations (FCF) in electron billiards reveal crucial discrepancies between experimental behavior and the semiclassical Landauer-Buttiker (SLB) theory that predicted their existence. In particular, the roles played by the billiard's geometry, potential profile and the resulting electron trajectory distribution are not well understood. We present measurements on two custom-made devices - a 'disrupted' billiard device and a 'bilayer' billiard device - designed to probe directly these three characteristics. Our results demonstrate that intricate processes beyond those proposed in the SLB theory are required to explain FCF. △ Less

Submitted 18 April, 2004; v1 submitted 22 June, 2003; originally announced June 2003.

Comments: 17 pages, 4 figures, in press for Physical Review B

Enhanced shot noise in resonant tunnelling via interacting localised states

Authors: S. S. Safonov, A. K. Savchenko, D. A. Bagrets, O. N. Jouravlev, Y. V. Nazarov, E. H. Linfield, D. A. Ritchie

Abstract: In a variety of mesoscopic systems shot noise is seen to be suppressed in comparison with its Poisson value. In this work we observe a considerable enhancement of shot noise in the case of resonant tunnelling via localised states. We present a model of correlated transport through two localised states which provides both a qualitative and quantitative description of this effect. In a variety of mesoscopic systems shot noise is seen to be suppressed in comparison with its Poisson value. In this work we observe a considerable enhancement of shot noise in the case of resonant tunnelling via localised states. We present a model of correlated transport through two localised states which provides both a qualitative and quantitative description of this effect. △ Less

Submitted 3 March, 2003; originally announced March 2003.

Comments: 4 pages, 4 figures

Magnetoresistance of a 2D electron gas caused by electron interactions in the transition from the diffusive to the ballistic regime

Authors: L. Li, Y. Y. Proskuryakov, A. K. Savchenko, E. H. Linfield, D. A. Ritchie

Abstract: On a high-mobility 2D electron gas we have observed, in strong magnetic fields (omega_{c} tau > 1), a parabolic negative magnetoresistance caused by electron-electron interactions in the regime of k_{B} T tau / hbar ~ 1, which is the transition from the diffusive to the ballistic regime. From the temperature dependence of this magnetoresistance the interaction correction to the conductivity delt… ▽ More On a high-mobility 2D electron gas we have observed, in strong magnetic fields (omega_{c} tau > 1), a parabolic negative magnetoresistance caused by electron-electron interactions in the regime of k_{B} T tau / hbar ~ 1, which is the transition from the diffusive to the ballistic regime. From the temperature dependence of this magnetoresistance the interaction correction to the conductivity delta sigma_{xx}^{ee}(T) is obtained in the situation of a long-range fluctuation potential and strong magnetic field. The results are compared with predictions of the new theory of interaction-induced magnetoresistance. △ Less

Submitted 27 July, 2002; originally announced July 2002.

Josephson current in ballistic Nb/InAs/Nb highly transmissive junctions

Authors: Francesco Giazotto, Kasper Grove-Rasmussen, Rosario Fazio, Fabio Beltram, Edmund H. Linfield, David A. Ritchie

Abstract: Highly transmissive ballistic junctions are demonstrated between Nb and the two-dimensional electron gas formed at an InAs/AlSb heterojunction. A reproducible fabrication protocol is presented yielding high critical supercurrent values. Current-voltage characteristics were measured down to 0.4 K and the observed supercurrent behavior was analyzed within a ballistic model in the clean limit. This… ▽ More Highly transmissive ballistic junctions are demonstrated between Nb and the two-dimensional electron gas formed at an InAs/AlSb heterojunction. A reproducible fabrication protocol is presented yielding high critical supercurrent values. Current-voltage characteristics were measured down to 0.4 K and the observed supercurrent behavior was analyzed within a ballistic model in the clean limit. This investigation allows us to demonstrate an intrinsic interface transmissivity approaching 90%. The reproducibility of the fabrication protocol makes it of interest for the experimental study of InAs-based superconductor-semiconductor hybrid devices. △ Less

Submitted 13 July, 2002; originally announced July 2002.

Comments: 7 pages REVTeX, 3 figures

Modulation origin of 1/f noise in two-dimensional hop**

Authors: V. Pokrovskii, A. K. Savchenko, W. R. Tribe, E. H. Linfield

Abstract: We show that 1/f noise in a two-dimensional electron gas with hop** conduction can be explained by the modulation of conducting paths by fluctuating occupancy of non-conducting states. The noise is sensitive to the structure of the critical hop** network, which is varied by changing electron concentration, sample size and temperature. With increasing temperature, it clearly reveals the cross… ▽ More We show that 1/f noise in a two-dimensional electron gas with hop** conduction can be explained by the modulation of conducting paths by fluctuating occupancy of non-conducting states. The noise is sensitive to the structure of the critical hop** network, which is varied by changing electron concentration, sample size and temperature. With increasing temperature, it clearly reveals the crossover between different hop** regimes. △ Less

Submitted 12 September, 2001; originally announced September 2001.

Comments: 4 pages, 4 figures, to be published in Phys.Rev.B (Rapid Communication)

Weak localisation, hole-hole interactions and the "metal"-insulator transition in two dimensions

Authors: M. Y. Simmons, A. R. Hamilton, M. Pepper, E. H. Linfield, P. D. Rose, D. A. Ritchie, .

Abstract: A detailed investigation of the metallic behaviour in high quality GaAs-AlGaAs two dimensional hole systems reveals the presence of quantum corrections to the resistivity at low temperatures. Despite the low density ($r_{s}>10$) and high quality of these systems, both weak localisation (observed via negative magnetoresistance) and weak hole-hole interactions (giving a correction to the Hall cons… ▽ More A detailed investigation of the metallic behaviour in high quality GaAs-AlGaAs two dimensional hole systems reveals the presence of quantum corrections to the resistivity at low temperatures. Despite the low density ($r_{s}>10$) and high quality of these systems, both weak localisation (observed via negative magnetoresistance) and weak hole-hole interactions (giving a correction to the Hall constant) are present in the so-called metallic phase where the resistivity decreases with decreasing temperature. The results suggest that even at high $r_{s}$ there is no metallic phase at T=0 in two dimensions. △ Less

Submitted 24 October, 1999; v1 submitted 22 October, 1999; originally announced October 1999.

Comments: 5 pages, 4 figures

Anomalous behaviour of S/N mesoscopic structures near T_c

Authors: S. Shapira, E. H. Linfield, C. J. Lambert, R. Seviour, A. F. Volkov, A. V. Zaitsev

Abstract: We observe a maximum in the conductance of Aluminum / n-GaAs junctions at temperatures 20 mK lower than the superconducting transition temperature. This is the first observation of a non- monotonic behavior of the conductance near the superconducting transition in superconducting normal junctions. To accommodate this effect we calculate the full temperature dependence of the conductance of these… ▽ More We observe a maximum in the conductance of Aluminum / n-GaAs junctions at temperatures 20 mK lower than the superconducting transition temperature. This is the first observation of a non- monotonic behavior of the conductance near the superconducting transition in superconducting normal junctions. To accommodate this effect we calculate the full temperature dependence of the conductance of these structures, invoking quasiclassical Green's functions in the diffusive limit. In addition to the well-known low temperature peak at temperatures on the order of the Thouless energy, we find a maximum near the critical temperature. This peak has the same origin as the subgap conductance observed in superconducting-normal junctions at low temperatures. Its calculated magnitude and position are in good agreement with our experimental observation. △ Less

Submitted 4 November, 1999; v1 submitted 24 June, 1999; originally announced June 1999.

Comments: 4 pages, 4 figures. To be published in PRL. Resubmission contains minor changes in line with refferee's recomendations

An observation of spin-valve effects in a semiconductor field effect transistor: a novel spintronic device

Authors: S. Gardelis, C. G Smith, C. H. W. Barnes, E. H. Linfield, D. A. Ritchie

Abstract: We present the first spintronic semiconductor field effect transistor. The injector and collector contacts of this device were made from magnetic permalloy thin films with different coercive fields so that they could be magnetized either parallel or antiparallel to each other in different applied magnetic fields. The conducting medium was a two dimensional electron gas (2DEG) formed in an AlSb… ▽ More We present the first spintronic semiconductor field effect transistor. The injector and collector contacts of this device were made from magnetic permalloy thin films with different coercive fields so that they could be magnetized either parallel or antiparallel to each other in different applied magnetic fields. The conducting medium was a two dimensional electron gas (2DEG) formed in an AlSb/InAs quantum well. Data from this device suggest that its resistance is controlled by two different types of spin-valve effect: the first occurring at the ferromagnet-2DEG interfaces; and the second occuring in direct propagation between contacts. △ Less

Submitted 3 February, 1999; originally announced February 1999.

Comments: 4 pages, 2 figures

Re-entrant insulator-metal-insulator transition at B=0 in a two dimensional hole gas

Authors: A. R. Hamilton, M. Y. Simmons, M. Pepper, E. H. Linfield, P. D. Rose, D. A. Ritchie

Abstract: We report the observation of a re-entrant insulator--metal--insulator transition at B=0 in a two dimensional (2D) hole gas in GaAs at temperatures down to 30mK. At the lowest carrier densities the holes are strongly localised. As the carrier density is increased a metallic phase forms, with a clear transition at σ= ~5e^2/h. Further increasing the density weakens the metallic behaviour, and event… ▽ More We report the observation of a re-entrant insulator--metal--insulator transition at B=0 in a two dimensional (2D) hole gas in GaAs at temperatures down to 30mK. At the lowest carrier densities the holes are strongly localised. As the carrier density is increased a metallic phase forms, with a clear transition at σ= ~5e^2/h. Further increasing the density weakens the metallic behaviour, and eventually leads to the formation of a second insulating state for σ> ~50e^2/h. In the limit of high carrier densities, where k_F.l is large and r_s is small, we thus recover the results of previous work on weakly interacting systems showing the absence of a metallic state in 2D. △ Less

Submitted 11 August, 1998; originally announced August 1998.

Comments: 5 pages, 3 figs, revtex & latex2e

Current flow past an etched barrier: field emission from a two-dimensional electron gas

Authors: D. H. Cobden, G. Pilling, R. Parthasarathy, P. L. McEuen, I. M. Castleton, E. H. Linfield, D. A. Ritchie, G. A. C. Jones

Abstract: We find that, under appropriate conditions, electrons can pass a barrier etched across a two dimensional electron gas (2DEG) by field emission from the GaAs/AlGaAs heterojunction into a second, low-density 2DEG formed deep in the substrate. The current-voltage characteristics exhibit a rapid increase in the current at the field emission threshold and intrinsic bistability above this threshold, c… ▽ More We find that, under appropriate conditions, electrons can pass a barrier etched across a two dimensional electron gas (2DEG) by field emission from the GaAs/AlGaAs heterojunction into a second, low-density 2DEG formed deep in the substrate. The current-voltage characteristics exhibit a rapid increase in the current at the field emission threshold and intrinsic bistability above this threshold, consistent with a heating instability occurring in the second 2DEG. These results may explain similar behaviour recently seen in a number of front-gated devices by several groups. △ Less

Submitted 23 December, 1997; originally announced December 1997.

Comments: 9 pages, includes 4 eps figures, uses europhys.sty, to appear in Europhysics Letters

Journal ref: Europhys. Lett, 41 (3), 327-332 (1998)

Resonant Tunneling Spectroscopy of Interacting Localised States -- Observation of the Correlated Current Through Two Impurities

Authors: V. V. Kuznetsov, A. K. Savchenko, D. R. Mace, E. H. Linfield, D. A. Ritchie

Abstract: We study effects of Coulomb interactions between localised states in a potential barrier by measuring resonant-tunneling spectra with a small bias applied along the barrier. In the ohmic regime the conductance of 0.2um--gate lateral GaAs microstructures shows distinct peaks associated with individual localised states. However, when an electric field is applied new states start contributing to th… ▽ More We study effects of Coulomb interactions between localised states in a potential barrier by measuring resonant-tunneling spectra with a small bias applied along the barrier. In the ohmic regime the conductance of 0.2um--gate lateral GaAs microstructures shows distinct peaks associated with individual localised states. However, when an electric field is applied new states start contributing to the current, which becomes a correlated electron flow through two interacting localised states. Several situations of such correlations have been observed, and the conclusions are confirmed by calculations. △ Less

Submitted 2 November, 1997; originally announced November 1997.

Comments: 10 pages, RevTeX, 4 figures, to be published in Phys. Rev. B, Rapid Communication

Metal-insulator transition at B=0 in a dilute two dimensional GaAs-AlGaAs hole gas

Authors: M. Y. Simmons, A. R. Hamilton, M. Pepper, E. H. Linfield, P. D. Rose, D. A. Ritchie

Abstract: We report the observation of a metal insulator transition at B=0 in a high mobility two dimensional hole gas in a GaAs-AlGaAs heterostructure. A clear critical point separates the insulating phase from the metallic phase, demonstrating the existence of a well defined minimum metallic conductivity sigma(min)=2e/h. The sigma(T) data either side of the transition can be `scaled' on to one curve wit… ▽ More We report the observation of a metal insulator transition at B=0 in a high mobility two dimensional hole gas in a GaAs-AlGaAs heterostructure. A clear critical point separates the insulating phase from the metallic phase, demonstrating the existence of a well defined minimum metallic conductivity sigma(min)=2e/h. The sigma(T) data either side of the transition can be `scaled' on to one curve with a single parameter (To). The application of a parallel magnetic field increases sigma(min) and broadens the transition. We argue that strong electron-electron interactions (rs = 10) destroy phase coherence, removing quantum intereference corrections to the conductivity. △ Less

Submitted 12 October, 1997; v1 submitted 22 September, 1997; originally announced September 1997.

Comments: 4 pages RevTex + 4 figures. Submitted to PRL. Originally posted 22 September 1997. Revised 12 October 1997 - minor changes to referencing, figure cations and figures

Correlation Effects on the Coupled Plasmon Modes of a Double Quantum Well

Authors: N P R Hill, J. T. Nicholls, E. H. Linfield, M. Pepper, D. A. Ritchie, G. A. C. Jones, Ben Yu-Kuang Hu, Karsten Flensberg

Abstract: At temperatures comparable to the Fermi temperature, we have measured a plasmon enhanced Coulomb drag in a GaAs/AlGaAs double quantum well electron system. This measurement provides a probe of the many-body corrections to the coupled plasmon modes, and we present a detailed comparison between experiment and theory testing the validity of local field theories. Using a perpendicular magnetic field… ▽ More At temperatures comparable to the Fermi temperature, we have measured a plasmon enhanced Coulomb drag in a GaAs/AlGaAs double quantum well electron system. This measurement provides a probe of the many-body corrections to the coupled plasmon modes, and we present a detailed comparison between experiment and theory testing the validity of local field theories. Using a perpendicular magnetic field to raise the magnetoplasmon energy we can induce a crossover to single-particle Coulomb scattering. △ Less

Submitted 6 March, 1997; originally announced March 1997.

Comments: plain tex, 4 pages, 3 figures, to be published in PRL

Journal ref: Phys. Rev. Lett. 78, 2204 (1997).

Tunneling Between Parallel Two-Dimensional Electron Gases

Authors: N. Turner, J. T. Nicholls, E. H. Linfield, K. M. Brown, G. A. C. Jones, D. A. Ritchie

Abstract: The tunneling between two parallel two-dimensional electron gases has been investigated as a function of temperature $T$, carrier density $n$, and the applied perpendicular magnetic field $B$. In zero magnetic field the equilibrium resonant lineshape is Lorentzian, reflecting the Lorentzian form of the spectral functions within each layer. From the width of the tunneling resonance the lifetime o… ▽ More The tunneling between two parallel two-dimensional electron gases has been investigated as a function of temperature $T$, carrier density $n$, and the applied perpendicular magnetic field $B$. In zero magnetic field the equilibrium resonant lineshape is Lorentzian, reflecting the Lorentzian form of the spectral functions within each layer. From the width of the tunneling resonance the lifetime of the electrons within a 2DEG has been measured as a function of $n$ and $T$, giving information about the density dependence of the electron-impurity scattering and the temperature dependence of the electron-electron scattering. In a magnetic field there is a general suppression of equilibrium tunneling for fields above $B=0.6$ T. A gap in the tunneling density of states has been measured over a wide range of magnetic fields and filling factors, and various theoretical predictions have been examined. In a strong magnetic field, when there is only one partially filled Landau level in each layer, the temperature dependence of the conductance characteristics has been modeled with a double-Gaussian spectral density. △ Less

Submitted 6 September, 1996; originally announced September 1996.

Comments: LaTeX requires REVTeX macros. Eighteen pages. Fourteen postscript figures are included. (All figures have been bitmapped to save space. The original can be requested by email from [email protected]). Accepted for publication in Phys. Rev. B

Distribution Function Analysis of Mesoscopic Hop** Conductance Fluctuations

Authors: R. J. F. Hughes, A. K. Savchenko, J. E. F. Frost, E. H. Linfield, J. T. Nicholls, M. Pepper, E. Kogan, M. Kaveh

Abstract: Variable-range hop** (VRH) conductance fluctuations in the gate-voltage characteristics of mesoscopic GaAs and Si transistors are analyzed by means of their full distribution functions (DFs). The forms of the DF predicted by the theory of Raikh and Ruzin have been verified under controlled conditions for both the long, narrow wire and the short, wide channel geometries. The variation of the me… ▽ More Variable-range hop** (VRH) conductance fluctuations in the gate-voltage characteristics of mesoscopic GaAs and Si transistors are analyzed by means of their full distribution functions (DFs). The forms of the DF predicted by the theory of Raikh and Ruzin have been verified under controlled conditions for both the long, narrow wire and the short, wide channel geometries. The variation of the mean square fluctuation size with temperature in wires fabricated from both materials is found to be described quantitatively by Lee's model of VRH along a 1D chain. Armed with this quantitative validation of the VRH model, the DF method is applied to the problem of magnetoconductance in the insulating regime. Here a non-monotonic variation of the magnetoconductance is observed in Si MOSFETS whose sign at low magnetic fields is dependent on the channel geometry. The origin of this defect is discussed within the framework of the interference model of VRH magnetoconductance in terms of narrowing of the DF in a magnetic field. △ Less

Submitted 25 April, 1996; v1 submitted 8 March, 1996; originally announced March 1996.

Comments: Revtex, 24 pages, 9 figures, figures are added

Re-entrant resonant tunneling

Authors: V. V. Kuznetsov, A. K. Savchenko, M. E. Raikh, L. I. Glazman, D. R. Mace, D. A. Ritchie, E. H. Linfield

Abstract: We study the effect of electron-electron interactions on the resonant-tunneling spectroscopy of the localized states in a barrier. Using a simple model of three localized states, we show that, due to the Coulomb interactions, a single state can give rise to two resonant peaks in the conductance as a function of gate voltage, G(Vg). We also demonstrate that an additional higher-order resonance wi… ▽ More We study the effect of electron-electron interactions on the resonant-tunneling spectroscopy of the localized states in a barrier. Using a simple model of three localized states, we show that, due to the Coulomb interactions, a single state can give rise to two resonant peaks in the conductance as a function of gate voltage, G(Vg). We also demonstrate that an additional higher-order resonance with Vg-position in between these two peaks becomes possibile when interactions are taken into account. The corresponding resonant-tunneling process involves two-electron transitions. We have observed both these effects in GaAs transistor microstructures by studying the time evolution of three adjacent G(Vg) peaks caused by fluctuating occupation of an isolated impurity (modulator). The heights of the two stronger peaks exibit in-phase fluctuations. The phase of fluctuations of the smaller middle peak is opposite. The two stronger peaks have their origin in the same localized state, and the third one corresponds to a co-tunneling process. △ Less

Submitted 1 March, 1996; originally announced March 1996.

Comments: 9 pages, REVTeX, 4 figures

Tunneling Between Two-Dimensional Electron Gases in a Weak Magnetic Field

Authors: N. Turner, J. T. Nicholls, K. M. Brown, E. H. Linfield, M. Pepper, D. A. Ritchie, G. A. C. Jones

Abstract: We have measured the tunneling between two two-dimensional electron gases (2DEGs) in weak magnetic fields, when the carrier densities of the two electron layers are matched. At zero magnetic field, B=0, the lineshape of the equilibrium tunneling resonance is best fit by a Lorentzian, with a linewidth which is determined by the roughness of the tunnel barrier. For $B\not=0$ with filling factors… ▽ More We have measured the tunneling between two two-dimensional electron gases (2DEGs) in weak magnetic fields, when the carrier densities of the two electron layers are matched. At zero magnetic field, B=0, the lineshape of the equilibrium tunneling resonance is best fit by a Lorentzian, with a linewidth which is determined by the roughness of the tunnel barrier. For $B\not=0$ with filling factors $ν\gg 1$, there is a suppression of the resonant tunneling conductance about zero bias, $V_{\text{sd}}=0$. This low field signature of the high field Coulomb gap shows the same linear $B$ dependence as previously measured for $ν<1$. △ Less

Submitted 8 March, 1995; originally announced March 1995.

Comments: REVTeX 3.0 macros required, 4 pages text, 3 postscript figures in a second file

Tunneling Between Two-Dimensional Electron Gases in a Strong Magnetic Field

Authors: K. M. Brown, N. Turner, J. T. Nicholls, E. H. Linfield, M. Pepper, D. A. Ritchie, G. A. C. Jones

Abstract: We have measured the tunneling between two two-dimensional electron gases at high magnetic fields $B$, when the carrier densities of the two electron layers are matched. For filling factors $ν<1$, there is a gap in the current-voltage characteristics centered about $V=0$, followed by a tunneling peak at $\sim 6$~mV. Both features have been observed before and have been attributed to electron-ele… ▽ More We have measured the tunneling between two two-dimensional electron gases at high magnetic fields $B$, when the carrier densities of the two electron layers are matched. For filling factors $ν<1$, there is a gap in the current-voltage characteristics centered about $V=0$, followed by a tunneling peak at $\sim 6$~mV. Both features have been observed before and have been attributed to electron-electron interactions within a layer. We have measured high field tunneling peak positions and fitted gap parameters that are proportional to $B$, and independent of the carrier densities of the two layers. This suggests a different origin for the gap to that proposed by current theories, which predict a $\sqrt{B}$ dependence. △ Less

Submitted 3 October, 1994; originally announced October 1994.

Comments: 9 pages, cond-mat/yymmnnn