Condensed Matter
[Submitted on 8 Mar 1996 (v1), last revised 25 Apr 1996 (this version, v2)]
Title:Distribution Function Analysis of Mesoscopic Hop** Conductance Fluctuations
View PDFAbstract: Variable-range hop** (VRH) conductance fluctuations in the gate-voltage characteristics of mesoscopic GaAs and Si transistors are analyzed by means of their full distribution functions (DFs). The forms of the DF predicted by the theory of Raikh and Ruzin have been verified under controlled conditions for both the long, narrow wire and the short, wide channel geometries. The variation of the mean square fluctuation size with temperature in wires fabricated from both materials is found to be described quantitatively by Lee's model of VRH along a 1D chain. Armed with this quantitative validation of the VRH model, the DF method is applied to the problem of magnetoconductance in the insulating regime. Here a non-monotonic variation of the magnetoconductance is observed in Si MOSFETS whose sign at low magnetic fields is dependent on the channel geometry. The origin of this defect is discussed within the framework of the interference model of VRH magnetoconductance in terms of narrowing of the DF in a magnetic field.
Submission history
From: Eugene Kogan [view email][v1] Fri, 8 Mar 1996 12:03:48 UTC (18 KB)
[v2] Thu, 25 Apr 1996 10:50:02 UTC (150 KB)
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