Showing 1–50 of 81 results for author: Ding, F

Intermediates of Forming Transition Metal Dichalcogenides Heterostructures Revealed by Machine Learning Simulations

Authors: Luneng Zhao, Hongsheng Liu, Yuan Chang, Xiaoran Shi, Junfeng Gao, Jijun Zhao, Feng Ding

Abstract: The primary restrictions on 2D transition metal dichalcogenides (TMD) vdW heterostructures (vdWHs) are size limitation and alloying. Recently, a two-step vapor deposition method was reported to grow wafer-scale TMD vdWHs with little contamination [Nature 621, 499 (2023)]. In this letter, we developed a machine learning potential (MLP) which can accurately simulate the growth processes of bilayer M… ▽ More The primary restrictions on 2D transition metal dichalcogenides (TMD) vdW heterostructures (vdWHs) are size limitation and alloying. Recently, a two-step vapor deposition method was reported to grow wafer-scale TMD vdWHs with little contamination [Nature 621, 499 (2023)]. In this letter, we developed a machine learning potential (MLP) which can accurately simulate the growth processes of bilayer MoS$_2$/WS$_2$ vdWHs under various conditions. Importantly, a SMMS (where M is Mo or W) structure is revealed as a highly stable intermediate easily introduces metal atom exchange and alloying. Eliminating the alloying contamination in TMD vdWHs is avoiding SMMS structure by preventing the landing of bare metal atoms. However, SMMS is revealed as an ideal electrode for MoS$_2$ FETs with low Schottky barrier. △ Less

Submitted 8 July, 2024; v1 submitted 8 May, 2024; originally announced May 2024.

Ultra-Long Homochiral Graphene Nanoribbons Grown Within h-BN Stacks for High-Performance Electronics

Authors: Bosai Lyu, Jiajun Chen, Sen Wang, Shuo Lou, Peiyue Shen, **gxu Xie, Lu Qiu, Izaac Mitchell, Can Li, Cheng Hu, Xianliang Zhou, Kenji Watanabe, Takashi Taniguchi, Xiaoqun Wang, **feng Jia, Qi Liang, Guorui Chen, Tingxin Li, Shiyong Wang, Wengen Ouyang, Oded Hod, Feng Ding, Michael Urbakh, Zhiwen Shi

Abstract: Van der Waals encapsulation of two-dimensional materials within hexagonal boron nitride (h-BN) stacks has proven to be a promising way to create ultrahigh-performance electronic devices. However, contemporary approaches for achieving van der Waals encapsulation, which involve artificial layer stacking using mechanical transfer techniques, are difficult to control, prone to contamination, and unsca… ▽ More Van der Waals encapsulation of two-dimensional materials within hexagonal boron nitride (h-BN) stacks has proven to be a promising way to create ultrahigh-performance electronic devices. However, contemporary approaches for achieving van der Waals encapsulation, which involve artificial layer stacking using mechanical transfer techniques, are difficult to control, prone to contamination, and unscalable. Here, we report on the transfer-free direct growth of high-quality graphene nanoribbons (GNRs) within h-BN stacks. The as-grown embedded GNRs exhibit highly desirable features being ultralong (up to 0.25 mm), ultranarrow ( < 5 nm), and homochiral with zigzag edges. Our atomistic simulations reveal that the mechanism underlying the embedded growth involves ultralow GNR friction when sliding between AA'-stacked h-BN layers. Using the grown structures, we demonstrate the transfer-free fabrication of embedded GNR field-effect devices that exhibit excellent performance at room temperature with mobilities of up to 4,600 $cm^{2} V^{-1} s^{-1}$ and on-off ratios of up to $10^{6}$. This paves the way to the bottom-up fabrication of high-performance electronic devices based on embedded layered materials. △ Less

Submitted 18 March, 2024; originally announced March 2024.

Profiles of static liquid-gas interfaces in axisymmetrical containers under different accelerations

Authors: Shangtong Chen, Yong Gao, Wen Li, Fenglin Ding, **tao Liu, Yong Li

Abstract: Second order perturbation solutions of profiles of bubbles suspended in liquid and liquid gas interfaces when liquid all sinks in the bottom under different accelerations are derived. Six procedures are developed based on these solutions, and they are divided into two types. One takes coordinates of endpoints of profiles as inputs, and the other takes liquid volume or gas volume as inputs. Numeric… ▽ More Second order perturbation solutions of profiles of bubbles suspended in liquid and liquid gas interfaces when liquid all sinks in the bottom under different accelerations are derived. Six procedures are developed based on these solutions, and they are divided into two types. One takes coordinates of endpoints of profiles as inputs, and the other takes liquid volume or gas volume as inputs. Numerical simulation are performed with the Volume of Fluid method and numerical results are in good agreement with predictions of these procedures. Besides, the bigger the acceleration, the more flatter the bubble will be until all liquid sinks to the bottom. Effects of accelerations on bubbles shape must be considered. When liquid all sinks to the bottom, predictions of liquid volume with the same liquid meniscus height as inputs differs a lot under different accelerations. The most significant change of liquid volume is when Bond is much smaller than 1. Effects of accelerations and liquid contact angle on liquid gas interfaces must be considered during evaluating liquid residue, and these findings will be great helpful for liquid residue measurement and fine management in space. △ Less

Submitted 30 January, 2024; originally announced January 2024.

Comments: 33 pages. 15 figures

MSC Class: 76Txx

Probing charge redistribution at the interface of self-assembled cyclo-P5 pentamers on Ag(111)

Authors: Outhmane Chahib, Yulin Yin, Jung-Ching Liu, Chao Li, Thilo Glatzel, Feng Ding, Qinghong Yuan, Ernst Meyer, Rémy Pawlak

Abstract: Phosphorus pentamer (cyclo-P5-) ions are unstable in nature but can be synthesized at the Ag(111) surface. Unlike monolayer black phosphorous, little is known about their electronic properties when in contact with metal electrodes, although this is crucial for future applications. Here we characterize the atomic structure of cyclo-P5 assembled on Ag(111) using atomic force microscopy with function… ▽ More Phosphorus pentamer (cyclo-P5-) ions are unstable in nature but can be synthesized at the Ag(111) surface. Unlike monolayer black phosphorous, little is known about their electronic properties when in contact with metal electrodes, although this is crucial for future applications. Here we characterize the atomic structure of cyclo-P5 assembled on Ag(111) using atomic force microscopy with functionalized tips and density functional theory. Combining force and tunneling spectroscopy, we find that a strong charge transfer induces an inward dipole moment at the cyclo-P5/Ag interface as well as the formation of an interface state. We probe the image potential states by field-effect resonant tunneling and quantify the increase of the local change of work function of 0.46 eV at the cyclo-P5 assembly. Our results suggest that the high-quality of the cyclo-P5/Ag interface might serve as a prototypical system for electric contacts in phosphorus-based semiconductor devices. △ Less

Submitted 23 January, 2024; originally announced January 2024.

Comments: 25 pages, 4 figures

Circular photonic crystal grating design for charge-tunable quantum light sources in the telecom C-band

Authors: Chenxi Ma, **gzhong Yang, Pengji Li, Eddy P. Rugeramigabo, Michael Zopf, Fei Ding

Abstract: Efficient generation of entangled photon pairs at telecom wavelengths is a key ingredient for long-range quantum networks. While embedding semiconductor quantum dots into hybrid circular Bragg gratings has proven effective, it conflicts with $p$-$i$-$n$ diode heterostructures which offer superior coherence. We propose and analyze hybrid circular photonic crystal gratings, incorporating air holes t… ▽ More Efficient generation of entangled photon pairs at telecom wavelengths is a key ingredient for long-range quantum networks. While embedding semiconductor quantum dots into hybrid circular Bragg gratings has proven effective, it conflicts with $p$-$i$-$n$ diode heterostructures which offer superior coherence. We propose and analyze hybrid circular photonic crystal gratings, incorporating air holes to facilitate charge carrier transport without compromising optical properties. Through numerical simulations, a broad cavity mode with a Purcell factor of 23 enhancing both exciton and biexciton transitions, and exceptional collection efficiency of 92.4% into an objective with numerical aperture of 0.7 are achieved. Furthermore, our design demonstrates direct coupling efficiency over 90% into a single-mode fiber over the entire telecom C-band. The hybrid circular photonic crystal grating thereby emerges as a promising solution for the efficient generation of highly coherent, polarization-entangled photon pairs. △ Less

Submitted 12 January, 2024; v1 submitted 2 January, 2024; originally announced January 2024.

Comments: 12 pages, 5 figures

Journal ref: Opt. Express 32, 14789-14800 (2024)

Corrosion-resistant aluminum alloy design through machine learning combined with high-throughput calculations

Authors: Yucheng Ji, Xiaoqian Fu, Feng Ding, Yongtao Xu, Yang He, Min Ao, Fulai Xiao, Dihao Chen, Poulumi Dey, Kui Xiao, **gli Ren, Xiaogang Li, Chaofang Dong

Abstract: Efficiently designing lightweight alloys with combined high corrosion resistance and mechanical properties remains an enduring topic in materials engineering. To this end, machine learning (ML) coupled ab-initio calculations is proposed within this study. Due to the inadequate accuracy of conventional stress-strain ML models caused by corrosion factors, a novel reinforcement self-learning ML algor… ▽ More Efficiently designing lightweight alloys with combined high corrosion resistance and mechanical properties remains an enduring topic in materials engineering. To this end, machine learning (ML) coupled ab-initio calculations is proposed within this study. Due to the inadequate accuracy of conventional stress-strain ML models caused by corrosion factors, a novel reinforcement self-learning ML algorithm (accuracy R2 >0.92) is developed. Then, a strategy that integrates ML models, calculated energetics and mechanical moduli is implemented to optimize the Al alloys. Next, this Computation Designed Corrosion-Resistant Al alloy is fabricated that verified the simulation. The performance (elongation reaches ~30%) is attributed to the H-captured Al-Sc-Cu phases (-1.44 eV H-1) and Cu-modified η/η' precipitation inside the grain boundaries (GBs). The developed Al-Mg-Zn-Cu interatomic potential (energy accuracy 6.50 meV atom-1) proves the cracking resistance of the GB region enhanced by Cu-modification. Conceptually, our strategy is of practical importance for designing new alloys exhibiting corrosion resistance and mechanical properties. △ Less

Submitted 26 December, 2023; originally announced December 2023.

Experimental verification of the inverse Anomalous spin Hall effect with perpendicular magnetic anisotropy Materials

Authors: J. E. Abrão, A. R. Rodrigues, H. F. Ding, S. Bedanta, A. Azevedo

Abstract: In this work, the spin pum** technique was employed to investigate the anomalous inverse spin Hall effect in BIG/NiO/Fe samples where BIG[(Bi,Tm)3(Fe,Ga)5O12] exhibits perpendicular magnetic anisotropy. Our results reveal an intriguing phenomenon: when the magnetizations of both ferromagnetic layers align perpendicularly, a distinct spin-to-charge current conversion mechanism occurs. This conver… ▽ More In this work, the spin pum** technique was employed to investigate the anomalous inverse spin Hall effect in BIG/NiO/Fe samples where BIG[(Bi,Tm)3(Fe,Ga)5O12] exhibits perpendicular magnetic anisotropy. Our results reveal an intriguing phenomenon: when the magnetizations of both ferromagnetic layers align perpendicularly, a distinct spin-to-charge current conversion mechanism occurs. This conversion is intricately linked to the magnetization of the converting layer, spin polarization, and the spin current orientation. △ Less

Submitted 11 December, 2023; originally announced December 2023.

Comments: 11 pages, 4 figures

Converse Flexoelectricity of Low-Dimensional Bismuth Selenite (Bi2Se3) Revealed by Piezoresponse Force Microscopy (PFM)

Authors: Qiong Liu, S. S. Nanthakumar, Bin Li, Teresa Cheng, Florian Bittner, Chenxi Ma, Fei Ding, Lei Zheng, Bernhard Roth, Xiaoying Zhuang

Abstract: Many kinds of two-dimensional (2D) van der Waals (vdW) have been demonstrated to exhibit electromechanical coupling effects, which makes them promising candidates for next-generation devices, such as piezotronics and nanogenerators. Recently, flexoelectricity was found to account for the out-of-plane electromechanical coupling in many 2D transition metal dichalcogenides (TMDs) who only exhibit in-… ▽ More Many kinds of two-dimensional (2D) van der Waals (vdW) have been demonstrated to exhibit electromechanical coupling effects, which makes them promising candidates for next-generation devices, such as piezotronics and nanogenerators. Recently, flexoelectricity was found to account for the out-of-plane electromechanical coupling in many 2D transition metal dichalcogenides (TMDs) who only exhibit in-plane piezoelectricity. However, low dimensional vdW three-dimensional (3D) topological insulators (TIs) have been overlooked regarding their electromechanical properties. In this study, for the first time, we experimentally investigate the electromechanical coupling of low dimensional 3D TIs with a centrosymmetric crystal structure, where a binary compound, bismuth selenite (Bi2Se3), is taken as an example. The results of piezoresponse force microscope (PFM) tests on the Bi2Se3 nanoflakes show that the material exhibits both out-of-plane and in-plane electromechanical responses. The Bi2Se3 nanoflake with a thickness of 37 nm possesses an effective out-of-plane piezoelectric coefficient of ~0.65 pm V-1. With careful analyses, the electromechanical responses are verified to arise from the converse flexoelectricity. The measured effective out-of-plane piezoelectric coefficient is mainly contributed by flexoelectric coefficient, μ_39, which is estimated to be approximately 0.13 nC m-1. However, it is rather difficult to obtain the in-plane component of the flexoelectric tensor from the in-plane PFM measurements since the direction of the in-plane stress is always not normal to the AFM cantilever axis. The results provide useful guidance for understanding the flexoelectric effect of low dimensional vdW materials with centrosymmetric crystal structures. Moreover, the work can pave to way to explore the electromechanical devices based on the flexoelectricity of vdW TIs. △ Less

Submitted 10 November, 2023; originally announced November 2023.

Comments: 6 figures

Anomalous tensile strength and thermal expansion, and low thermal conductivity in wide band gap boron monoxide monolayer

Authors: Bohayra Mortazavi, Fazel Shojaei, Fei Ding, Xiaoying Zhuang

Abstract: Most recently the formation of boron monoxide (BO) in the two-dimensional (2D) form has been confirmed experimentally (J. Am. Chem. Soc. 2023, 145, 14660). Motivated by the aforementioned finding, herein we theoretically explore the key physical properties of the single-layer and suspended BO. Density functional theory (DFT) results reveal that BO monolayer yields a large indirect band gap of 3.78… ▽ More Most recently the formation of boron monoxide (BO) in the two-dimensional (2D) form has been confirmed experimentally (J. Am. Chem. Soc. 2023, 145, 14660). Motivated by the aforementioned finding, herein we theoretically explore the key physical properties of the single-layer and suspended BO. Density functional theory (DFT) results reveal that BO monolayer yields a large indirect band gap of 3.78 (2.18) eV on the basis of HSE06(PBE) functional. Ab-initio molecular dynamics results reveal the remarkable thermal stability of the BO monolayer at 1000 K. The thermal and mechanical properties at room temperature are furthermore investigated using a machine learning interatomic potential (MLIP). The developed MLIP-based model close to the ground state could very precisely reproduce the DFT predictions for the mechanical properties of the BO monolayer. The elastic modulus, tensile strength and lattice thermal conductivity of the BO monolayer at room temperature are predicted to be 107 GPa, 25 GPa and 5.6 W/mK, respectively. At the room temperature the BO monolayer is noticeably predicted to yield an ultrahigh negative thermal expansion coefficient, by almost 17 folds larger than that of the single-layer graphene. The presented results reveal the large indirect electronic band gap, decent thermal and dynamical stability, anomalously low elastic modulus to tensile strength ratio, ultrahigh negative thermal expansion coefficients and low lattice thermal conductivity of the BO monolayer. △ Less

Submitted 30 October, 2023; originally announced October 2023.

Journal ref: FlatChem 2023

Intralayer Negative Poisson's Ratio in Two-Dimensional Black Arsenic by Strain Engineering

Authors: **g**g Zhang, Weihan Zhang, Leining Zhang, Guoshuai Du, Yunfei Yu, Qinglin Xia, Xu Wu, Yeliang Wang, Wei Ji, **gsi Qiao, Feng Ding, Yabin Chen

Abstract: Negative Poisson's ratio as the anomalous characteristic generally exists in artificial architectures, such as re-entrant and honeycomb structures. The structures with negative Poisson's ratio have attracted intensive attention due to their unique auxetic effect and many promising applications in shear resistant and energy absorption fields. However, experimental observation of negative Poisson's… ▽ More Negative Poisson's ratio as the anomalous characteristic generally exists in artificial architectures, such as re-entrant and honeycomb structures. The structures with negative Poisson's ratio have attracted intensive attention due to their unique auxetic effect and many promising applications in shear resistant and energy absorption fields. However, experimental observation of negative Poisson's ratio in natural materials barely happened, although various two-dimensional layered materials are predicted in theory. Herein, we report the anisotropic Raman response and the intrinsic intralayer negative Poisson's ratio of two-dimensional natural black arsenic (b-As) via strain engineering strategy. The results were evident by the detailed Raman spectrum of b-As under uniaxial strain together with density functional theory calculations. It is found that b-As was softer along the armchair than zigzag direction. The anisotropic mechanical features and van der Waals interactions play essential roles in strain-dependent Raman shifts and negative Poisson's ratio in the natural b-As along zigzag direction. This work may shed a light on the mechanical properties and potential applications of two-dimensional puckered materials. △ Less

Submitted 7 September, 2023; originally announced September 2023.

Comments: 23 pages, 4 figures

Magic momenta and three dimensional Landau levels from a three dimensional graphite moiré superlattice

Authors: Xin Lu, Bo Xie, Yue Yang, Xiao Kong, Jun Li, Feng Ding, Zhu-Jun Wang, Jianpeng Liu

Abstract: Twisted bilayer graphene (TBG) and other quasi-two-dimensional moiré superlattices have attracted significant attention due to the emergence of various correlated and topological states associated with the flat bands in these systems. In this work, we theoretically explore the physical properties of a new type of \textit{three dimensional graphite moiré superlattice}, the bulk alternating twisted… ▽ More Twisted bilayer graphene (TBG) and other quasi-two-dimensional moiré superlattices have attracted significant attention due to the emergence of various correlated and topological states associated with the flat bands in these systems. In this work, we theoretically explore the physical properties of a new type of \textit{three dimensional graphite moiré superlattice}, the bulk alternating twisted graphite (ATG) system with homogeneous twist angle, which is grown by in situ chemical vapor decomposition method. Compared to TBG, the bulk ATG system is bestowed with an additional wavevector degrees of freedom due to the extra dimensionality. As a result, we find that when the twist angle of bulk ATG is smaller than twice of the magic angle of TBG, there always exist ``magic momenta" at which the in-plane Fermi velocities of the moiré bands vanish. Moreover, topologically distinct flat bands of TBG at different magic angles can even co-exist at different out-of-plane wavevectors in a single bulk ATG system. Most saliently, when the twist angle is relatively large, exactly dispersionless three dimensional zeroth Landau level would emerge in the bulk ATG, which may give rise to robust three dimensional quantum Hall effects over a large range of twist angles. △ Less

Submitted 2 September, 2023; originally announced September 2023.

Comments: 6 pages + 3 figures in main text, 17 pages + 13 figures in Supplementary Information

High-rate intercity quantum key distribution with a semiconductor single-photon source

Authors: **gzhong Yang, Zenghui Jiang, Frederik Benthin, Joscha Hanel, Tom Fandrich, Raphael Joos, Stephanie Bauer, Sascha Kolatschek, Ali Hreibi, Eddy Patrick Rugeramigabo, Michael Jetter, Simone Luca Portalupi, Michael Zopf, Peter Michler, Stefan Kück, Fei Ding

Abstract: Quantum key distribution (QKD) enables the transmission of information that is secure against general attacks by eavesdroppers. The use of on-demand quantum light sources in QKD protocols is expected to help improve security and maximum tolerable loss. Semiconductor quantum dots (QDs) are a promising building block for quantum communication applications because of the deterministic emission of sin… ▽ More Quantum key distribution (QKD) enables the transmission of information that is secure against general attacks by eavesdroppers. The use of on-demand quantum light sources in QKD protocols is expected to help improve security and maximum tolerable loss. Semiconductor quantum dots (QDs) are a promising building block for quantum communication applications because of the deterministic emission of single photons with high brightness and low multiphoton contribution. Here we report on the first intercity QKD experiment using a bright deterministic single photon source. A BB84 protocol based on polarisation encoding is realised using the high-rate single photons in the telecommunication C-band emitted from a semiconductor QD embedded in a circular Bragg grating structure. Utilising the 79 km long link with 25.49 dB loss (equivalent to 130 km for the direct-connected optical fibre) between the German cities of Hannover and Braunschweig, a record-high secret key bits per pulse of 4.8 * 10^{-5} with an average quantum bit error ratio of ~ 0.65 % are demonstrated. An asymptotic maximum tolerable loss of 28.11 dB is found, corresponding to a length of 144 km of standard telecommunication fibre. Deterministic semiconductor sources therefore challenge state-of-the-art QKD protocols and have the potential to excel in measurement device independent protocols and quantum repeater applications. △ Less

Submitted 2 July, 2024; v1 submitted 30 August, 2023; originally announced August 2023.

Comments: 10 pages, 4 figures

Journal ref: Light Sci Appl 13, 150 (2024)

A solid-state source of single and entangled photons at diamond SiV$^-$-center transitions operating at 80K

Authors: Xin Cao, **gzhong Yang, Tom Fandrich, Yiteng Zhang, Eddy P. Rugeramigabo, Benedikt Brechtken, Rolf J. Haug, Michael Zopf, Fei Ding

Abstract: Large-scale quantum networks require the implementation of long-lived quantum memories as stationary nodes interacting with qubits of light. Epitaxially grown quantum dots hold great potential for the on-demand generation of single and entangled photons with high purity and indistinguishability. Coupling these emitters to memories with long coherence times enables the development of hybrid nanopho… ▽ More Large-scale quantum networks require the implementation of long-lived quantum memories as stationary nodes interacting with qubits of light. Epitaxially grown quantum dots hold great potential for the on-demand generation of single and entangled photons with high purity and indistinguishability. Coupling these emitters to memories with long coherence times enables the development of hybrid nanophotonic devices incorporating the advantages of both systems. Here we report the first GaAs/AlGaAs quantum dots grown by droplet etching and nanohole infilling method, emitting single photons with a narrow wavelength distribution (736.2 $\pm$ 1.7 nm) close to the zero-phonon line of Silicon-vacancy centers. Polarization entangled photons are generated via the biexciton-exciton cascade with a fidelity of (0.73 $\pm$ 0.09). High single photon purity is maintained from 4 K (g$^($$^2$$^)$(0) = 0.07 $\pm$ 0.02) up to 80 K (g$^($$^2$$^)$(0) = 0.11 $\pm$ 0.01), therefore making this hybrid system technologically attractive for real-world quantum photonic applications. △ Less

Submitted 27 April, 2023; originally announced April 2023.

Robust 3.7 V-Na$_{2/3}$[Cu$_{1/3}$Mn$_{2/3}$]O$_2$ Cathode for Na-ion Batteries

Authors: Xiaohui Rong, Xingguo Qi, Quan Zhou, Libin Kang, Dongdong Xiao, Ruijuan Xiao, Feixiang Ding, Yang Yang, Yuan Liu, Yun Su, Shiguang Zhang, Lunhua He, Yaxiang Lu, Liquan Chen, Yong-Sheng Hu

Abstract: Na-ion batteries (NIBs), which are recognized as a next-generation alternative technology for energy storage, still suffer from commercialization constraints due to the lack of low-cost, high-performance cathode materials. Since our first discovery of Cu$^{3+}$/Cu$^{2+}$ electrochemistry in 2014, numerous Cu-substituted/doped materials have been designed for NIBs. However for almost ten years, the… ▽ More Na-ion batteries (NIBs), which are recognized as a next-generation alternative technology for energy storage, still suffer from commercialization constraints due to the lack of low-cost, high-performance cathode materials. Since our first discovery of Cu$^{3+}$/Cu$^{2+}$ electrochemistry in 2014, numerous Cu-substituted/doped materials have been designed for NIBs. However for almost ten years, the potential of Cu$^{3+}$/Cu$^{2+}$ electrochemistry has been grossly underappreciated and normally regarded as a semielectrochemically active redox. Here, we re-synthesized P2-Na$_{2/3}$[Cu$_{1/3}$Mn$_{2/3}$]O$_2$ and reinterpreted it as a high-voltage, cost-efficient, air-stable, long-life, and high-rate cathode material for NIBs, which demonstrates a high operating voltage of 3.7 V and a completely active Cu$^{3+}$/Cu$^{2+}$ redox reaction. The 2.3 Ah cylindrical cells exhibit excellent cycling (93.1% capacity after 2000 cycles), high rate (97.2% capacity at 10C rate), good low-temperature performance (86.6% capacity at -30$^\circ$C), and high safety, based on which, a 56 V-11.5 Ah battery pack for E-bikes is successfully constructed, exhibiting stable cycling (96.5% capacity at the 800th cycle) and a long driving distance (36 km, tester weight 65 kg). This work offers a commercially feasible cathode material for low-cost, high-voltage NIBs, paving the way for advanced NIBs in power and stationary energy storage applications. △ Less

Submitted 27 March, 2023; originally announced March 2023.

Comments: 15 pages, 3 figures, 1 table

Strain control of exciton and trion spin-valley dynamics in monolayer transition metal dichalcogenides

Authors: Zhao An, Pedro Soubelet, Yaroslav Zhumagulov, Michael Zopf, Alex Delhomme, Chenjiang Qian, Paulo E. Faria Junior, Jaroslav Fabian, Xin Cao, **gzhong Yang, Andreas V. Stier, Fei Ding, Jonathan J. Finley

Abstract: The electron-hole exchange interaction is a fundamental mechanism that drives valley depolarization via intervalley exciton hop** in semiconductor multi-valley systems. Here, we report polarization-resolved photoluminescence spectroscopy of neutral excitons and negatively charged trions in monolayer MoSe$_2$ and WSe$_2$ under biaxial strain. We observe a marked enhancement(reduction) on the WSe… ▽ More The electron-hole exchange interaction is a fundamental mechanism that drives valley depolarization via intervalley exciton hop** in semiconductor multi-valley systems. Here, we report polarization-resolved photoluminescence spectroscopy of neutral excitons and negatively charged trions in monolayer MoSe$_2$ and WSe$_2$ under biaxial strain. We observe a marked enhancement(reduction) on the WSe$_2$ triplet trion valley polarization with compressive(tensile) strain while the trion in MoSe$_2$ is unaffected. The origin of this effect is shown to be a strain dependent tuning of the electron-hole exchange interaction. A combined analysis of the strain dependent polarization degree using ab initio calculations and rate equations shows that strain affects intervalley scattering beyond what is expected from strain dependent bandgap modulations. The results evidence how strain can be used to tune valley physics in energetically degenerate multi-valley systems. △ Less

Submitted 27 March, 2023; originally announced March 2023.

Successive magnetic orderings in the Ising spin chain magnet DyNi$_5$Ge$_3$

Authors: H. Ge, L. Zhang, N. Zhao, J. Yang, L. Wang, L. Zhou, Y. Fu, T. T. Li, Z. M. Song, F. Ding, J. B. Xu, Y. F. Zhang, S. M. Wang, J. W. Mei, X. Tong, P. Miao, H. He, Q. Zhanghang, L. S. Wu, J. M. Sheng

Abstract: In this report, we investigated a new rare earth based one-dimensional Ising spin chain magnet~\DNG~by means of magnetization, specific heat and powder neutron diffraction measurements. Due to the crystalline electrical field splitting, the magnetic Dy ions share an Ising like ground doublet state. Owning to the local point symmetry, these Ising moments form into two canted magnetic sublattices, w… ▽ More In this report, we investigated a new rare earth based one-dimensional Ising spin chain magnet~\DNG~by means of magnetization, specific heat and powder neutron diffraction measurements. Due to the crystalline electrical field splitting, the magnetic Dy ions share an Ising like ground doublet state. Owning to the local point symmetry, these Ising moments form into two canted magnetic sublattices, which were further confirmed by the angle-dependent magnetization measurement. In zero fields, two successive antiferromagnetic phase transitions were found at temperatures $T_{\mathrm{N1}}=6~\rm K$ and $T_{\mathrm{N2}}=5~\rm K$, respectively. Only part of the moments are statically ordered in this intermediate state between $T_{\mathrm{N1}}$ and $T_{\mathrm{N2}}$. Powder neutron diffraction experiments at different temperatures were performed as well. An incommensurate magnetic propagation vector of $\mathbf{k_{\rm m}}=(0.5,0.4,0.5)$ was identified. The refined spin configurations through the irreducible representation analysis confirmed that these Ising spins are canted in the crystal $ab$~plane. △ Less

Submitted 15 March, 2023; originally announced March 2023.

Comments: 9 pages, 7 figures

Journal ref: Physical Review MATERIALS 6, 085001 (2022)

Dynamics of growing carbon nanotube interfaces probed by machine learning-enabled molecular simulations

Authors: Daniel Hedman, Ben McLean, Christophe Bichara, Shigeo Maruyama, J. Andreas Larsson, Feng Ding

Abstract: Carbon nanotubes (CNTs) are currently considered a successor to silicon in future nanoelectronic devices. To realize this, controlled growth of defect-free nanotubes is required. Until now, the understanding of atomic-scale CNT growth mechanisms provided by molecular dynamics simulations has been hampered by their short timescales. Here, we develop an efficient and accurate machine learning force… ▽ More Carbon nanotubes (CNTs) are currently considered a successor to silicon in future nanoelectronic devices. To realize this, controlled growth of defect-free nanotubes is required. Until now, the understanding of atomic-scale CNT growth mechanisms provided by molecular dynamics simulations has been hampered by their short timescales. Here, we develop an efficient and accurate machine learning force field, DeepCNT-22, to simulate the complete growth of defect-free single-walled CNTs (SWCNTs) on iron catalysts at near-microsecond timescales. We provide atomic-level insight into the nucleation and growth processes of SWCNTs, including the evolution of the tube-catalyst interface and the mechanisms underlying defect formation and healing. Our simulations highlight the maximization of SWCNT-edge configurational entropy during growth and how defect-free CNTs can grow ultralong if carbon supply and temperature are carefully controlled. △ Less

Submitted 15 March, 2023; v1 submitted 19 February, 2023; originally announced February 2023.

Comments: Supporting Videos can be found on YouTube at the following links S1: https://youtu.be/K90Ca6uDNEQ S2: https://youtu.be/x8Z5Go5iW58 S3: https://youtu.be/e1Yx14PQjkg S4: https://youtu.be/JFKhklSHgA4

Atomically Sharp, Closed Bilayer Phosphorene Edges by Self-Passivation

Authors: Sol Lee, Yang** Lee, Li ** Ding, Kihyun Lee, Feng Ding, Kwanpyo Kim

Abstract: Two-dimensional (2D) crystals' edge structures not only influence their overall properties but also dictate their formation due to edge-mediated synthesis and etching processes. Edges must be carefully examined because they often display complex, unexpected features at the atomic scale, such as reconstruction, functionalization, and uncontrolled contamination. Here, we examine atomic-scale edge st… ▽ More Two-dimensional (2D) crystals' edge structures not only influence their overall properties but also dictate their formation due to edge-mediated synthesis and etching processes. Edges must be carefully examined because they often display complex, unexpected features at the atomic scale, such as reconstruction, functionalization, and uncontrolled contamination. Here, we examine atomic-scale edge structures and uncover reconstruction behavior in bilayer phosphorene. We use in situ transmission electron microscopy (TEM) of phosphorene/graphene specimens at elevated temperatures to minimize surface contamination and reduce e-beam damage, allowing us to observe intrinsic edge configurations. Bilayer zigzag (ZZ) edge was found the most stable edge configuration under e-beam irradiation. Through first-principles calculations and TEM image analysis under various tilting and defocus conditions, we find that bilayer ZZ edges undergo edge reconstruction and so acquire closed, self-passivated edge configurations. The extremely low formation energy of the closed bilayer ZZ edge and its high stability against e-beam irradiation are confirmed by first-principles calculations. Moreover, we fabricate bilayer phosphorene nanoribbons with atomically-sharp closed ZZ edges. The identified bilayer ZZ edges will aid in the fundamental understanding of the synthesis, degradation, reconstruction, and applications of phosphorene and related structures. △ Less

Submitted 2 August, 2022; originally announced August 2022.

Comments: 22 pages, 5 figures

Journal ref: ACS Nano, 2022

Surface quantum dots with pure, coherent, and blinking-free single photon emission

Authors: Xin Cao, **gzhong Yang, Pengji Li, Tom Fandrich, Eddy P. Rugeramigabo, Vlastimil Křápek, Chenxi Ma, Frederik Benthin, Robert Keil, Benedikt Brechtken, Rolf J. Haug, Michael Oestreich, Yiteng Zhang, Constantin Schmidt, Zhao An, Michael Zopf, Fei Ding

Abstract: The surface of semiconductor nanostructures has a major impact on their electronic and optical properties. Disorder and defects in the surface layer typically cause degradation of charge carrier transport and radiative recombination dynamics. However, surface vicinity is inevitable for many scalable nano-optical applications. Epitaxially grown quantum dots are the best candidate for high-performan… ▽ More The surface of semiconductor nanostructures has a major impact on their electronic and optical properties. Disorder and defects in the surface layer typically cause degradation of charge carrier transport and radiative recombination dynamics. However, surface vicinity is inevitable for many scalable nano-optical applications. Epitaxially grown quantum dots are the best candidate for high-performance single photon emission and show great potential for quantum technologies. Yet, these emitters only reveal their excellent properties if they are deeply embedded in a semiconductor host. Until today, quantum dots close to surfaces yield weak, broad, and unstable emissions. Here, we show the complete restoration of optical properties from quantum dots grown directly on a semiconductor surface. The vanishing luminescence from the as-grown sample turns into bright, ultra-stable, coherent and blinking-free single photon emission after sulphur passivation. Under quasi-resonant excitation, single photons are generated with 98.8% purity, 77% indistinguishability, linewidths down to 4 $μ$eV and 99.69% persistency across 11 orders of magnitude in time. The emission is stable even after two years and when being subjected to nanomanufacturing processes. Some long-standing stumbling blocks for surface-dominated quantum dots are thereby removed, unveiling new possibilities for hybrid nano-devices and applications in quantum communication or sensing. △ Less

Submitted 12 May, 2023; v1 submitted 27 July, 2022; originally announced July 2022.

Comments: New experiments show that the results have to be re-interpreted, most likely leading to a new manuscript

Catalytic growth of ultralong graphene nanoribbons on insulating substrates

Authors: Bosai Lyu, Jiajun Chen, Shuo Lou, Can Li, Lu Qiu, Wengen Ouyang, **gxu Xie, Izaac Mitchell, Tongyao Wu, Aolin Deng, Cheng Hu, Xianliang Zhou, Peiyue Shen, Saiqun Ma, Zhenghan Wu, Kenji Watanabe, Takashi Taniguchi, Xiaoqun Wang, Qi Liang, **feng Jia, Michael Urbakh, Oded Hod, Feng Ding, Shiyong Wang, Zhiwen Shi

Abstract: Graphene nanoribbons (GNRs) with widths of a few nanometres are promising candidates for future nano-electronic applications due to their structurally tunable bandgaps, ultrahigh carrier mobilities, and exceptional stability. However, the direct growth of micrometre-long GNRs on insulating substrates, which is essential for the fabrication of nano-electronic devices, remains an immense challenge.… ▽ More Graphene nanoribbons (GNRs) with widths of a few nanometres are promising candidates for future nano-electronic applications due to their structurally tunable bandgaps, ultrahigh carrier mobilities, and exceptional stability. However, the direct growth of micrometre-long GNRs on insulating substrates, which is essential for the fabrication of nano-electronic devices, remains an immense challenge. Here, we report the epitaxial growth of GNRs on an insulating hexagonal boron nitride (h-BN) substrate through nanoparticle-catalysed chemical vapor deposition (CVD). Ultra-narrow GNRs with lengths of up to 10 μm are synthesized. Remarkably, the as-grown GNRs are crystallographically aligned with the h-BN substrate, forming one-dimensional (1D) moiré superlattices. Scanning tunnelling microscopy reveals an average width of 2 nm and a typical bandgap of ~1 eV for similar GNRs grown on conducting graphite substrates. Fully atomistic computational simulations support the experimental results and reveal a competition between the formation of GNRs and carbon nanotubes (CNTs) during the nucleation stage, and van der Waals sliding of the GNRs on the h-BN substrate throughout the growth stage. Our study provides a scalable, single-step method for growing micrometre-long narrow GNRs on insulating substrates, thus opening a route to explore the performance of high-quality GNR devices and the fundamental physics of 1D moiré superlattices. △ Less

Submitted 27 May, 2022; originally announced May 2022.

Interplay of itinerant electrons and Ising moments in a hybrid honeycomb quantum magnet TmNi$_3$Al$_9$

Authors: H. Ge, C. J. Huang, Q. Zhang, N. Zhao, L. Wang, J. Yang, Y. Fu, L. Zhang, Z. M. Song, T. T. Li, F. Ding, J. B. Xu, Y. F. Zhang, X. Tong, S. M. Wang, J. W. Mei, A. Podlesnyak, L. S. Wu, Gang Chen, J. M. Sheng

Abstract: The interplay between itinerant electrons and local magnetic moments in quantum materials brings about rich and fascinating phenomena and stimulates various developments in the theoretical framework. In this work, thermodynamic, electric transport, and neutron diffraction measurements were performed on a newly synthesized honeycomb lattice magnet TmNi$_3$Al$_9$. Based on the experimental data, a m… ▽ More The interplay between itinerant electrons and local magnetic moments in quantum materials brings about rich and fascinating phenomena and stimulates various developments in the theoretical framework. In this work, thermodynamic, electric transport, and neutron diffraction measurements were performed on a newly synthesized honeycomb lattice magnet TmNi$_3$Al$_9$. Based on the experimental data, a magnetic field temperature phase diagram was constructed, exhibiting three essentially different magnetic regions. Below ${T_{\rm N}=2.97 \pm 0.02}\ \rm K$ Tm$^{3+}$ moments order antiferromagnetically in zero field. We found that the Tm$^{3+}$ ions form a pseudo-doublet ground state with the Ising-like moments lying normal to the two-dimensional honeycomb layers. Application of a magnetic field along the easy axis gradually suppresses the antiferromagnetic order in favor of an induced ferromagnetic state above the critical field ${B_c=0.92 \pm 0.05}\ \rm T$. In the vicinity of $B_c$, a strong enhancement of the quantum spin fluctuations was observed. The quantum Ising nature of the local moments and the coupling to itinerant electrons are discussed. △ Less

Submitted 2 September, 2022; v1 submitted 18 January, 2022; originally announced January 2022.

Comments: 9 pages, 9 figures

Journal ref: Physical Review B 106, 054434 (2022)

Bottom-up Growth of Graphene Nanospears and Nanoribbons

Authors: Haibin Sun, Fengning Liu, Leining Zhang, Ben McLean, Hao An, Ming Huang, Marc-Georg Willinger, Rodney Ruoff, Zhujun Wang, Feng Ding

Abstract: Graphene nanoribbons (GNRs) are considered one of the most promising materials for next generation electronics, however a reliable and controllable synthesis method is still lacking. Here, we report the CVD growth of GNRs on a copper surface and the corresponding mechanisms of growth. One-dimensional GNR growth is enabled by a vapor-liquid-solid (VLS) graphene growth guided by on-surface propagati… ▽ More Graphene nanoribbons (GNRs) are considered one of the most promising materials for next generation electronics, however a reliable and controllable synthesis method is still lacking. Here, we report the CVD growth of GNRs on a copper surface and the corresponding mechanisms of growth. One-dimensional GNR growth is enabled by a vapor-liquid-solid (VLS) graphene growth guided by on-surface propagation of a liquid catalyst particle. Controlling the suppression of vapor-solid-solid (VSS) graphene growth along the width direction of the GNR by tuning the flow of H2 during growth gives rise to a spear head-shaped graphene that we term graphene nanospears (GNSs). The real-time visual and spatially resolved observations confirm the VSS growth of graphene can be fully suppressed and lead to GNR formation on Cu surface. These findings reveal key insight into the growth mechanism of graphene and open a door for achieving a facile and scalable method of synthesizing free standing GNRs. △ Less

Submitted 3 January, 2022; originally announced January 2022.

Muon spin rotation and relaxation study on topological noncentrosymmetric superconductor PbTaSe$_2$

Authors: Z. H. Zhu, C. Tan, J. Zhang, P. K. Biswas, A. D. Hillier, M. X. Wang, Y. X. Yang, C. S. Chen, Z. F. Ding, S. Y. Li, L. Shu

Abstract: Topological superconductivity is an exotic phenomenon due to the symmetry-protected topological surface state, in which a quantum system has an energy gap in the bulk but supports gapless excitations confined to its boundary. Symmetries including central and time-reversal (TRS), along with their relations with topology, are crucial for topological superconductivity. We report muon spin relaxation/… ▽ More Topological superconductivity is an exotic phenomenon due to the symmetry-protected topological surface state, in which a quantum system has an energy gap in the bulk but supports gapless excitations confined to its boundary. Symmetries including central and time-reversal (TRS), along with their relations with topology, are crucial for topological superconductivity. We report muon spin relaxation/rotation ($μ$SR) experiments on a topological noncentrosymmetric superconductor PbTaSe$_2$ to study its TRS and gap symmetry. Zero-field $μ$SR experiments indicate the absence of internal magnetic field in the superconducting state, consistent with previous $μ$SR results. Furthermore, transverse-field $μ$SR measurements reveals that the superconducting gap of PbTaSe$_2$ is an isotropic three-dimensional fully-gapped single-band. The fully-gapped results can help understand the pairing mechanism and further classify the topological superconductivity in this system. △ Less

Submitted 11 December, 2021; originally announced December 2021.

Photoneutralization of charges in GaAs quantum dot based entangled photon emitters

Authors: **gzhong Yang, Tom Fandrich, Frederik Benthin, Robert Keil, Nand Lal Sharma, Weijie Nie, Caspar Hopfmann, Oliver G. Schmidt, Michael Zopf, Fei Ding

Abstract: Semiconductor-based emitters of pairwise photonic entanglement are a promising constituent of photonic quantum technologies. They are known for the ability to generate discrete photonic states on-demand with low multiphoton emission, near-unity entanglement fidelity, and high single photon indistinguishability. However, quantum dots typically suffer from luminescence blinking, lowering the efficie… ▽ More Semiconductor-based emitters of pairwise photonic entanglement are a promising constituent of photonic quantum technologies. They are known for the ability to generate discrete photonic states on-demand with low multiphoton emission, near-unity entanglement fidelity, and high single photon indistinguishability. However, quantum dots typically suffer from luminescence blinking, lowering the efficiency of the source and hampering their scalable application in quantum networks. In this paper, we investigate and adjust the intermittence of the neutral exciton emission in a GaAs/AlGaAs quantum dot under two-photon resonant excitation of the neutral biexciton. We investigate the spectral and quantum optical response of the quantum dot emission to an additional wavelength tunable gate laser, revealing blinking caused by the intrinsic Coulomb blockade due to charge capture processes. Our finding demonstrates that the emission quenching can be actively suppressed by controlling the balance of free electrons and holes in the vicinity of the quantum dot and thereby significantly increasing the quantum efficiency by 30%. △ Less

Submitted 14 February, 2024; v1 submitted 5 October, 2021; originally announced October 2021.

Comments: 7 pages, 4 figures

Journal ref: Physical Review B 105, 115301 (2022)

Statistical limits for quantum networks with semiconductor entangled photon sources

Authors: **gzhong Yang, Michael Zopf, Pengji Li, Nand Lal Sharma, Weijie Nie, Frederik Benthin, Tom Fandrich, Eddy Patrick Rugeramigabo, Caspar Hopfmann, Robert Keil, Oliver G. Schmidt, Fei Ding

Abstract: Semiconductor quantum dots are promising building blocks for quantum communication applications. Although deterministic, efficient, and coherent emission of entangled photons has been realized, implementing a practical quantum repeater remains outstanding. Here we explore the statistical limits for entanglement swap** with sources of polarization-entangled photons from the commonly used biexcito… ▽ More Semiconductor quantum dots are promising building blocks for quantum communication applications. Although deterministic, efficient, and coherent emission of entangled photons has been realized, implementing a practical quantum repeater remains outstanding. Here we explore the statistical limits for entanglement swap** with sources of polarization-entangled photons from the commonly used biexciton-exciton cascade. We stress the necessity of tuning the exciton fine structure, and explain why the often observed time evolution of photonic entanglement in quantum dots is not applicable for large quantum networks. We identify the critical, statistically distributed device parameters for entanglement swap** based on two sources. A numerical model for benchmarking the consequences of device fabrication, dynamic tuning techniques, and statistical effects is developed, in order to bring the realization of semiconductor-based quantum networks one step closer to reality. △ Less

Submitted 10 June, 2022; v1 submitted 14 September, 2021; originally announced September 2021.

Comments: 9 pages, 4 figures

Journal ref: Physical Review B 105, 235305

Room-temperature on-chip orbital angular momentum single-photon sources

Authors: Cuo Wu, Shailesh Kumar, Yinhui Kan, Danylo Komisar, Zhiming Wang, Sergey I. Bozhevolnyi, Fei Ding

Abstract: On-chip photon sources carrying orbital angular momentum (OAM) are in demand for high-capacity optical information processing in both classical and quantum regimes. However, currently-exploited integrated OAM sources have been primarily limited to the classical regime. Herein, we demonstrate a room-temperature on-chip integrated OAM source that emits well-collimated single photons, with a single-p… ▽ More On-chip photon sources carrying orbital angular momentum (OAM) are in demand for high-capacity optical information processing in both classical and quantum regimes. However, currently-exploited integrated OAM sources have been primarily limited to the classical regime. Herein, we demonstrate a room-temperature on-chip integrated OAM source that emits well-collimated single photons, with a single-photon purity of g(2)(0) = 0.22, carrying entangled spin and orbital angular momentum states and forming two spatially separated entangled radiation channels with different polarization properties. The OAM-encoded single photons are generated by efficiently outcoupling diverging surface plasmon polaritons excited with a deterministically positioned quantum emitter via Archimedean spiral gratings. Our OAM single-photon sources bridge the gap between conventional OAM manipulation and nonclassical light sources, enabling high-dimensional and large-scale photonic quantum systems for information processing. △ Less

Submitted 2 April, 2021; originally announced April 2021.

Angstrom-wide conductive channels in black phosphorus by Cu intercalation

Authors: Suk Woo Lee, Lu Qiu, Jong Chan Yoon, Yohan Kim, Da Li, Inseon Oh, Gil-Ho Lee, Jung-Woo Yoo, Hyung-Joon Shin, Feng Ding, Zonghoon Lee

Abstract: Intercalation is an effective method to improve and modulate properties of two-dimensional materials. Even so, spatially controlled intercalation at atomic scale, which is important to introduce and modulated properties, has not been successful due to difficulties in controlling the diffusion of intercalants. Here, we show formation of angstrom-wide conductive channels (~4.3 A) in black phosphorus… ▽ More Intercalation is an effective method to improve and modulate properties of two-dimensional materials. Even so, spatially controlled intercalation at atomic scale, which is important to introduce and modulated properties, has not been successful due to difficulties in controlling the diffusion of intercalants. Here, we show formation of angstrom-wide conductive channels (~4.3 A) in black phosphorus by Cu intercalation. The atomic structure, resultant microstructural effects, intercalation mechanism, and local variations of electronic properties modulated in black phosphorus by Cu intercalation were investigated extensively by transmission electron microscopy including in situ observation, DFT calculation, and conductive atomic force microscopy. △ Less

Submitted 21 January, 2021; originally announced January 2021.

Crystallographic Reconstruction Driven Modified Mechanical Properties in Anisotropic Rhenium Disulfides

Authors: Jung Hwa Kim, Xinyue Dai, Feng Ding, Zonghoon Lee

Abstract: Atomic-scale investigation on mechanical behaviors is highly necessary to fully understand the fracture mechanics especially of brittle materials, which are determined by atomic-scale phenomena (e.g., lattice trap**). Here, exfoliated anisotropic rhenium disulfide (ReS2) flakes are used to investigate atomic-scale crack propagation depending on the propagation directions. While the conventional… ▽ More Atomic-scale investigation on mechanical behaviors is highly necessary to fully understand the fracture mechanics especially of brittle materials, which are determined by atomic-scale phenomena (e.g., lattice trap**). Here, exfoliated anisotropic rhenium disulfide (ReS2) flakes are used to investigate atomic-scale crack propagation depending on the propagation directions. While the conventional strain-stress curves exhibit a strong anisotropy depending on the cleavage direction of ReS2, but our experimental results show a reduced cleavage anisotropy due to the lattice reconstruction in [100] cracking with high resistance to fracture. In other words, [010] and [110] cracks with low barriers to cleavage exhibit the ultimate sharpness of the crack tip without plastic deformation, whereas [100] cracks drive lattice rotation on one side of the crack, leading to a non-flat grain boundary formation. Finally, crystallographic reconstruction associated with the high lattice randomness of two-dimensional materials drives to a modified cleavage tendency, further indicating the importance of atomic-scale studies for a complete understanding of the mechanics. △ Less

Submitted 2 December, 2020; originally announced December 2020.

Comments: 15 pages, 4 figures

Deterministic preparation of spin qubits in droplet etched GaAs quantum dots using quasi-resonant excitation

Authors: Caspar Hopfmann, Nand Lal Sharma, Weijie Nie, Robert Keil, Fei Ding, Oliver G. Schmidt

Abstract: We present a first comprehensive study on deterministic spin preparation employing excited state resonances of droplet etched GaAs quantum dots. This achievement facilitates future investigations of spin qubit based quantum memories using the GaAs quantum dot material platform. By observation of excitation spectra for a range of fundamental excitonic transitions the properties of different quantum… ▽ More We present a first comprehensive study on deterministic spin preparation employing excited state resonances of droplet etched GaAs quantum dots. This achievement facilitates future investigations of spin qubit based quantum memories using the GaAs quantum dot material platform. By observation of excitation spectra for a range of fundamental excitonic transitions the properties of different quantum dot energy levels, i.e. shells, are revealed. The innovative use of polarization resolved excitation and detection in quasi-resonant excitation spectroscopy facilitates determination of $85$ $\%$ maximum spin preparation fidelity - irrespective of the relative orientations of lab and quantum dot polarization eigenbases. Additionally, the characteristic non-radiative decay time is investigated as a function of ground state, excitation resonance and excitation power level, yielding decay times as low as $29$ ps for s-p-shell exited state transitions. Finally, by time resolved correlation spectroscopy it is demonstrated that the employed excitation scheme has a significant impact on the electronic environment of quantum dot transitions thereby influencing its charge and coherence. △ Less

Submitted 30 November, 2020; originally announced November 2020.

Comments: 13 pages, 11 figures

Journal ref: Phys. Rev. B 104, 075301 (2021)

Maximally entangled and GHz-clocked on-demand photon pair source

Authors: Caspar Hopfmann, Weijie Nie, Nand Lal Sharma, Carmen Weigelt, Fei Ding, Oliver G. Schmidt

Abstract: We present a 1 GHz-clocked, maximally entangled and on-demand photon pair source based on droplet etched GaAs quantum dots using two-photon excitation. By employing these GaP microlensenhanced devices in conjunction with their substantial brightness, raw entanglement fidelities of up to $0.95 \pm 0.01$ and post-selected photon indistinguishabilities of up to $0.93 \pm 0.01$, the suitability for qu… ▽ More We present a 1 GHz-clocked, maximally entangled and on-demand photon pair source based on droplet etched GaAs quantum dots using two-photon excitation. By employing these GaP microlensenhanced devices in conjunction with their substantial brightness, raw entanglement fidelities of up to $0.95 \pm 0.01$ and post-selected photon indistinguishabilities of up to $0.93 \pm 0.01$, the suitability for quantum repeater based long range quantum entanglement distribution schemes is shown. Comprehensive investigations of a complete set of polarization selective two-photon correlations as well as time resolved Hong-Ou-Mandel interferences facilitate innovative methods that determine quantities such as photon extraction and excitation efficiencies as well as pure dephasing directly - opposed to commonly employed indirect techniques. △ Less

Submitted 22 October, 2020; originally announced October 2020.

Comments: 9 pages, 10 figures

Journal ref: Phys. Rev. B 103, 075413 (2021)

Distinct Kondo Screening Behaviors in Heavy Fermion Filled Skutterudites with 4f1 and 4f2 Configurations

Authors: X. Lou, H. C. Xu, T. L. Yu, Y. H. Song, C. H. P. Wen, W. Z. Wei, A. Leithe-Jasper, Z. F. Ding, L. Shu, S. Kirchner, R. Peng, D. L. Feng

Abstract: Filled-skutterudite heavy fermion (HF) compounds host rich ground states depending on the f electron configurations. CeOs4Sb12 (COS) with Ce 4f1, and PrOs4Sb12 (POS) with Pr 4f2 configurations show distinct properties of Kondo insulating and HF superconductivity, respectivity. We unveiled the underlying microscopic origin by angle-resolved photoemission spectroscopy studies. Their eV-scale band st… ▽ More Filled-skutterudite heavy fermion (HF) compounds host rich ground states depending on the f electron configurations. CeOs4Sb12 (COS) with Ce 4f1, and PrOs4Sb12 (POS) with Pr 4f2 configurations show distinct properties of Kondo insulating and HF superconductivity, respectivity. We unveiled the underlying microscopic origin by angle-resolved photoemission spectroscopy studies. Their eV-scale band structure matches well, representing the common characters of conduction electrons in ROs4Sb12 systems (R = rare earth). However, f electrons interact differently with conduction electrons in them. Strong hybridization between conduction electrons and f electrons is observed in COS with band dependent hybridization gaps, and the development of Kondo insulating state is directly revealed. Although the ground state of POS is a singlet, finite but incoherent hybridization exists due to Kondo scattering with the thermally excited triplet crystalline electric field (CEF) state. Our results help to understand the intriguing properties in COS and POS, and provide a clean demonstration of the microscopic differences in HF systems with 4f1 and 4f2 configurations. △ Less

Submitted 9 June, 2020; originally announced June 2020.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. Lett. 126, 136402 (2021)

Unusual slow magnetic fluctuations and critical slowing down in Sr$_{2}$Ir$_{1-x}$Rh$_{x}$O$_{4}$

Authors: C. Tan, Z. F. Ding, J. Zhang, Z. H. Zhu, O. O. Bernal, P. -C. Ho, A. D. Hillier, A. Koda, H. Luetkens, G. D. Morris, D. E. MacLaughlin, L. Shu

Abstract: Hidden magnetic order of Sr$_2$Ir$_{1-x}$Rh$_x$O$_4$, $x = 0.05$ and 0.1, has been studied using muon spin relaxation spectroscopy. In zero applied field and weak longitudinal fields ($μ_0H_L \lesssim 2$~mT), muon spin relaxation data can be well described by exponentially-damped static Lorentzian Kubo-Toyabe functions, indicating that static and dynamic local fields coexist at each muon site. For… ▽ More Hidden magnetic order of Sr$_2$Ir$_{1-x}$Rh$_x$O$_4$, $x = 0.05$ and 0.1, has been studied using muon spin relaxation spectroscopy. In zero applied field and weak longitudinal fields ($μ_0H_L \lesssim 2$~mT), muon spin relaxation data can be well described by exponentially-damped static Lorentzian Kubo-Toyabe functions, indicating that static and dynamic local fields coexist at each muon site. For $μ_0H_L \gtrsim 2$~mT, the static rate is completely decoupled, and the exponential decay is due to dynamic spin fluctuations. In both zero field and $μ_0H_L = 1$--2~mT, the temperature dependencies of the exponential muon spin relaxation rate exhibit maxima at 215~K for $x = 0.05$ and 175~K for $x = 0.1$, suggesting critical slowing down of electronic spin fluctuations. The field dependencies of the dynamic spin fluctuation rates can be well described by the Redfield relation. The correlation time of this electronic spin fluctuation is in the range of~2--5~ns for Sr$_2$Ir$_{0.9}$Rh$_{0.1}$O$_4$, and shorter than 2~ns for Sr$_2$Ir$_{0.95}$Rh$_{0.05}$O$_4$. The rms fluctuating field is on the order of 1 mT, which is consistent with the polarized neutron diffraction cross-section. △ Less

Submitted 26 March, 2020; v1 submitted 17 October, 2019; originally announced October 2019.

Journal ref: Phys. Rev. B 101, 195108 (2020)

Spinning single photons

Authors: Yin H. Kan, Sebastian K. H. Andersen, Fei Ding, Shailesh Kumar, Chang Y. Zhao, Sergey I. Bozhevolnyi

Abstract: Single photons carrying spin angular momentum (SAM), i.e., circularly polarized single photons generated typically by subjecting a quantum emitter (QE) to a strong magnetic field at low temperatures are at the core of chiral quantum optics enabling non-reciprocal single-photon configurations and deterministic spin-photon interfaces. Here we propose a conceptually new approach to the room-temperatu… ▽ More Single photons carrying spin angular momentum (SAM), i.e., circularly polarized single photons generated typically by subjecting a quantum emitter (QE) to a strong magnetic field at low temperatures are at the core of chiral quantum optics enabling non-reciprocal single-photon configurations and deterministic spin-photon interfaces. Here we propose a conceptually new approach to the room-temperature generation of SAM-coded single photons (SSPs) entailing QE non-radiative coupling to surface plasmons that are transformed, by interacting with an optical metasurface, into a collimated stream of SSPs with the designed handedness. We report on the design, fabrication and characterization of SSP sources consisting of dielectric circular nanoridges with azimuthally varying widths deterministically fabricated on a dielectric-protected silver film around a nanodiamond containing a nitrogen-vacancy centre. With properly engineered phases of QE-originated fields scattered by nanoridges, the out-coupled photons feature a well-defined SAM (with the chirality > 0.8) and high directionality (collection efficiency up to 92%). △ Less

Submitted 16 October, 2019; originally announced October 2019.

Comments: 21 pages and 14 figures

The Strength of Mechanically-Exfoliated Monolayer Graphene

Authors: Xin Zhao, Dimitrios G. Papageorgiou, Liyan Zhu, Feng Ding, Robert J. Young

Abstract: The deformation and fracture behaviour of one-atom-thick mechanically exfoliated graphene has been studied in detail. Monolayer graphene flakes with different lengths, widths and shapes were successfully prepared by mechanical exfoliation and deposited onto poly(methyl methacrylate) (PMMA) beams. The fracture behaviour of the monolayer graphene was followed by deforming the PMMA beams. Through in-… ▽ More The deformation and fracture behaviour of one-atom-thick mechanically exfoliated graphene has been studied in detail. Monolayer graphene flakes with different lengths, widths and shapes were successfully prepared by mechanical exfoliation and deposited onto poly(methyl methacrylate) (PMMA) beams. The fracture behaviour of the monolayer graphene was followed by deforming the PMMA beams. Through in-situ Raman map** at different strain levels, the distributions of strain over the graphene flakes were determined from the shift of the graphene Raman 2D band. The failure mechanisms of the exfoliated graphene were either by flake fracture or failure of the graphene/polymer interface. The fracture of the flakes was observed from the formation of cracks identified from the appearance of lines of zero strain in the strain contour maps. It was found that the strength of the monolayer graphene flakes decreased with increasing flake width. The strength dropped to less than 10 GPa for large flakes, much lower than the reported value of 130 GPa for monolayer graphene, thought to be due to the presence of defects. It is shown that a pair of topological defects in monolayer graphene will form a pseudo crack and the effect of such defects upon the strength of monolayer graphene has been modelled using molecular mechanical simulations. △ Less

Submitted 18 March, 2019; originally announced March 2019.

Comments: 16 pages, 11 figures

Journal ref: Nanoscale, 2019, 11, 14339

Design of Face Centered Cubic Co81.8Si9.1B9.1 with High Magnetocrystalline Anisotropy

Authors: Jiliang Zhang, Guangcun Shan, Yuefei Zhang, Fazhu Ding, Chan Hung Shek

Abstract: Despite the composition close to glassy forming alloys, face centered cubic (FCC) Co81.8Si9.1B9.1, designed based on Co9B atomic cluster (polyhedral), are synthesized as singlephase ribbons successfully. These ribbons, with grain sizes of ca. 92 nm, show supreme ductility and strong orientation along (111), which couples with shape anisotropy leading to high magnetocrystalline anisotropy comparabl… ▽ More Despite the composition close to glassy forming alloys, face centered cubic (FCC) Co81.8Si9.1B9.1, designed based on Co9B atomic cluster (polyhedral), are synthesized as singlephase ribbons successfully. These ribbons, with grain sizes of ca. 92 nm, show supreme ductility and strong orientation along (111), which couples with shape anisotropy leading to high magnetocrystalline anisotropy comparable to Co rich Co-Pt nanoscale thin films, with a coercivity of 430 Oe and squareness of 0.82 at room temperature. The stability and magnetic behaviors of the phase are discussed based on experimental electronic structure. This work not only develops low cost Co-based materials for hard magnetic applications, but also extends the atomic cluster model developed for amorphous alloys into the design of new crystalline materials. △ Less

Submitted 3 February, 2019; originally announced February 2019.

Comments: 11 pages

Journal ref: Phys. Status Solidi RRL 12(4),170394 (2018)

Entanglement Swap** with Semiconductor-generated Photons

Authors: Michael Zopf, Robert Keil, Yan Chen, **gzhong Yang, Disheng Chen, Fei Ding, Oliver G. Schmidt

Abstract: Transferring entangled states between photon pairs is essential for quantum communication technologies. Semiconductor quantum dots are the most promising candidate for generating polarization-entangled photons deterministically. Recent improvements in photonic quality and brightness now make them suited for complex quantum optical purposes in practical devices. Here we demonstrate for the first ti… ▽ More Transferring entangled states between photon pairs is essential for quantum communication technologies. Semiconductor quantum dots are the most promising candidate for generating polarization-entangled photons deterministically. Recent improvements in photonic quality and brightness now make them suited for complex quantum optical purposes in practical devices. Here we demonstrate for the first time swap** of entangled states between two pairs of photons emitted by a single quantum dot. A joint Bell measurement heralds the successful generation of the Bell state $Ψ^+$ with a fidelity of up to $0.81 \pm 0.04$. The state's nonlocal nature is confirmed by violating the CHSH-Bell inequality. Our photon source is compatible with atom-based quantum memories, enabling implementation of hybrid quantum repeaters. This experiment thus is a major step forward for semiconductor based quantum communication technologies. △ Less

Submitted 23 January, 2019; originally announced January 2019.

Journal ref: Phys. Rev. Lett. 123, 160502 (2019)

Chemically Induced Transformation of CVD-Grown Bilayer Graphene into Single Layer Diamond

Authors: Pavel V. Bakharev, Ming Huang, Manav Saxena, Suk Woo Lee, Se Hun Joo, Sung O Park, Jichen Dong, Dulce Camacho-Mojica, Sunghwan **, Youngwoo Kwon, Mandakini Biswal, Feng Ding, Sang Kyu Kwak, Zonghoon Lee, Rodney S. Ruoff

Abstract: Notwithstanding numerous density functional studies on the chemically induced transformation of multilayer graphene into a diamond-like film, a comprehensive convincing experimental proof of such a conversion is still lacking. We show that the fluorination of graphene sheets in Bernal (AB)-stacked bilayer graphene (AB-BLG) grown by chemical vapor deposition on a single crystal CuNi(111) surface tr… ▽ More Notwithstanding numerous density functional studies on the chemically induced transformation of multilayer graphene into a diamond-like film, a comprehensive convincing experimental proof of such a conversion is still lacking. We show that the fluorination of graphene sheets in Bernal (AB)-stacked bilayer graphene (AB-BLG) grown by chemical vapor deposition on a single crystal CuNi(111) surface triggers the formation of interlayer carbon-carbon bonds, resulting in a fluorinated diamond monolayer (F-diamane). Induced by fluorine chemisorption, the phase transition from AB-BLG to single layer diamond was studied and verified by X-ray photoelectron, ultraviolet photoelectron, Raman, UV-Vis, electron energy loss spectroscopies, transmission electron microscopy, and DFT calculations. △ Less

Submitted 7 January, 2019; originally announced January 2019.

Comments: 61 pages, 27 figures, 2 tables

Grain Boundaries in Chemical Vapor Deposited Atomically Thin Hexagonal Boron Nitride

Authors: Xibiao Ren, Jichen Dong, Peng Yang, Jidong Li, Guangyuan Lu, Tianru Wu, Haomin Wang, Wanlin Guo, Ze Zhang, Feng Ding, Chuanhong **

Abstract: Large-area two-dimensional (2D) materials for technical applications can now be produced by chemical vapor deposition (CVD). Unfortunately, grain boundaries (GBs) are ubiquitously introduced as a result of the coalescence of grains with different crystallographic orientations. It is well known that the properties of materials largely depend on GB structures. Here, we carried out a systematic study… ▽ More Large-area two-dimensional (2D) materials for technical applications can now be produced by chemical vapor deposition (CVD). Unfortunately, grain boundaries (GBs) are ubiquitously introduced as a result of the coalescence of grains with different crystallographic orientations. It is well known that the properties of materials largely depend on GB structures. Here, we carried out a systematic study on the GB structures in CVD-grown polycrystalline h-BN monolayer films by transmission electron microscope. Interestingly, most of these GBs are revealed to be formed via overlap** between neighboring grains, which are distinct from the covalently bonded GBs as commonly observed in other 2D materials. Further density functional theory (DFT) calculations show that the hydrogen plays an essential role in overlap** GB formation. This work provides an in-depth understanding of the microstructures and formation mechanisms of GBs in CVD-grown h-BN films, which should be informative in guiding the precisely controlled synthesis of large area single crystalline h-BN and other 2D materials. △ Less

Submitted 19 November, 2018; originally announced November 2018.

Comments: 12 pages, 14 figures

Journal ref: Phys. Rev. Materials 3, 014004 (2019)

Towards the growth of single-crystal boron nitride monolayer on Cu

Authors: Li Wang, Xiaozhi Xu, Leining Zhang, Ruixi Qiao, Muhong Wu, Zhichang Wang, Shuai Zhang, **g Liang, Zhihong Zhang, Yuwei Shan, Yi Guo, Marc Willinger, Hui Wu, Qunyang Li, Wenlong Wang, Peng Gao, Shiwei Wu, Ying Jiang, Dapeng Yu, Enge Wang, Xuedong Bai, Zhu-Jun Wang, Feng Ding, Kaihui Liu

Abstract: Atom-layered hexagonal boron nitride (hBN), with excellent stability, flat surface and large bandgap, has been reported to be the best 2D insulator to open up the great possibilities for exciting potential applications in electronics, optoelectronics and photovoltaics. The ability to grow high-quality large single crystals of hBN is at the heart for those applications, but the size of single-cryst… ▽ More Atom-layered hexagonal boron nitride (hBN), with excellent stability, flat surface and large bandgap, has been reported to be the best 2D insulator to open up the great possibilities for exciting potential applications in electronics, optoelectronics and photovoltaics. The ability to grow high-quality large single crystals of hBN is at the heart for those applications, but the size of single-crystal 2D BN is less than a millimetre till now. Here, we report the first epitaxial growth of a 10*10 cm2 single-crystal hBN monolayer on a low symmetry Cu(110) "vicinal surface". The growth kinetics, unidirectional alignment and seamless stitching of hBN domains are unambiguously illustrated using centimetre- to the atomic-scale characterization techniques. The findings in this work are expected to significantly boost the massive applications of 2D materials-based devices, and also pave the way for the epitaxial growth of broad non-centrosymmetric 2D materials. △ Less

Submitted 16 November, 2018; originally announced November 2018.

Anatomy of electrical signals and dc-voltage lineshape in spin torque ferromagnetic resonance

Authors: Yin Zhang, Q. Liu, B. F. Miao, H. F. Ding, X. R. Wang

Abstract: The electrical detection of spin torque ferromagnetic resonance (st-FMR) is becoming a popular method for measuring the spin-Hall angle of heavy metals (HM). However, various sensible analysis on the same material with either the same or different experimental setups yielded different spin-Hall angles with large discrepancy, indicating some missing ingredients in our current understanding of st-FM… ▽ More The electrical detection of spin torque ferromagnetic resonance (st-FMR) is becoming a popular method for measuring the spin-Hall angle of heavy metals (HM). However, various sensible analysis on the same material with either the same or different experimental setups yielded different spin-Hall angles with large discrepancy, indicating some missing ingredients in our current understanding of st-FMR. Here we carry out a careful analysis of electrical signals of the st-FMR in a HM/ferromagnet (HM/FM) bilayer with an arbitrary magnetic anisotropy. The FM magnetization is driven by two radio-frequency (rf) forces: the rf Oersted field generated by an applied rf electric current and the so called rf spin-orbit torque from the spin current flowing perpendicularly from the HM to the FM due to the spin-Hall effect. By using the universal form of the dynamic susceptibility matrix of magnetic materials at the st-FMR, the electrical signals originated from the anisotropic magnetoresistance, anomalous Hall effect and inverse spin-Hall effect are analysed and dc-voltage lineshape near the st-FMR are obtained. Angle-dependence of dc-voltage is given for two setups. A way of experimentally extracting the spin-Hall angle of a HM is proposed. △ Less

Submitted 2 November, 2018; originally announced November 2018.

Journal ref: Phys. Rev. B 99, 064424 (2019)

Anomalous twin boundaries in 2D materials

Authors: A. P. Rooney, Z. Li, W. Zhao, A. Gholinia, A. Kosikov, G. Auton, F. Ding, R. V. Gorbachev, R. J. Young, S. J Haigh

Abstract: The high mechanical strength and excellent flexibility of 2D materials such as graphene are some of their most important properties [1]. Good flexibility is key for exploiting 2D materials in many emerging technologies, such as wearable electronics, bioelectronics, protective coatings and composites [1] and recently bending has been suggested as a route to tune electronic transport behaviour [2].… ▽ More The high mechanical strength and excellent flexibility of 2D materials such as graphene are some of their most important properties [1]. Good flexibility is key for exploiting 2D materials in many emerging technologies, such as wearable electronics, bioelectronics, protective coatings and composites [1] and recently bending has been suggested as a route to tune electronic transport behaviour [2]. For virtually all crystalline materials macroscopic deformation is accommodated by the movement of dislocations and through the formation of twinning defects [3]; it is the geometry of the resulting microstructure that largely determines the mechanical and electronic properties. Despite this, the atomic microstructure of 2D materials after mechanical deformation has not been widely investigated: only by understanding these deformed microstructures can the resulting properties be accurately predicted and controlled. In this paper we describe the different structural features that can form as a result of bending in van der Waals (vdW) crystals of 2D materials. We show that twin boundaries, an important class of crystal defect, are delocalised by several nm and not atomically sharp as has been assumed for over half a century [4]. In addition, we demonstrate that different classes of microstructure are present in the deformed material and can be predicted from just the atomic structure, bend angle, and flake thickness. We anticipate that this new knowledge of the deformation structure for 2D materials will provide foundations for tailoring transport behaviour[2], mechanical properties, liquid-phase [5,6] and scotch-tape exfoliation [7,8], and crystal growth. △ Less

Submitted 1 September, 2018; originally announced September 2018.

Comments: 18 pages, 5 figures

Size dependence of the Graphene Islands Moving on Cu (111) Surface during the CVD Growth

Authors: Ziwei Xu, Changshuai Shi, Lu Qiu, Feng Ding

Abstract: The graphene islands, formed as different sizes, are crucial for the final quality of the formed graphene during the CVD growth either as the nucleation seeds or as the build blocks for larger graphene domains. Extensive efforts had been devoted to the size or the morphology control while fewer works were reported on the moving dynamics of these graphene islands as well as the associate influences… ▽ More The graphene islands, formed as different sizes, are crucial for the final quality of the formed graphene during the CVD growth either as the nucleation seeds or as the build blocks for larger graphene domains. Extensive efforts had been devoted to the size or the morphology control while fewer works were reported on the moving dynamics of these graphene islands as well as the associate influences to their coalescence during the CVD Growth of graphene. In this study, based on the self-developed C-Cu empirical potential, we performed systematic molecular dynamics simulations on the surface moving of three typical graphene islands CN (N = 24, 54 and 96) on the Cu (111) surface and discovered their different behaviors in sinking, lateral translation and rotation at the atomic scale owning to their different sizes, which were proved to bring forth significant impacts to their coalescences and the final quality of the as-formed larger domains of graphene. This study would deepen our atomistic insights into the mechanisms of the graphene CVD growth and provide significant theoretical guidelines to its controlled synthesis. △ Less

Submitted 24 August, 2018; originally announced August 2018.

Tracing crystal-field splittings in the rare earth-based intermetallic CeIrIn$_5$

Authors: Q. Y. Chen, C. H. P. Wen, Q. Yao, K. Huang, Z. F. Ding, L. Shu, X. H. Niu, Y. B. Huang, G. B. Zhang, Y. Zhang, X. C. Lai, S. Kirchner, D. L. Feng

Abstract: Crystal electric field states in rare earth intermetallics show an intricate entanglement with the many-body physics that occurs in these systems and that is known to lead to a plethora of electronic phases. Here, we attempt to trace different contributions to the crystal electric field (CEF) splittings in CeIrIn$_5$, a heavy-fermion compound and member of the Ce$M$In$_5$ ($M$= Co, Rh, Ir) family.… ▽ More Crystal electric field states in rare earth intermetallics show an intricate entanglement with the many-body physics that occurs in these systems and that is known to lead to a plethora of electronic phases. Here, we attempt to trace different contributions to the crystal electric field (CEF) splittings in CeIrIn$_5$, a heavy-fermion compound and member of the Ce$M$In$_5$ ($M$= Co, Rh, Ir) family. To this end, we utilize high-resolution resonant angle-resolved photoemission spectroscopy (ARPES) and present a spectroscopic study of the electronic structure of this unconventional superconductor over a wide temperature range. As a result, we show how ARPES can be used in combination with thermodynamic measurements or neutron scattering to disentangle different contributions to the CEF splitting in rare earth intermetallics. We also find that the hybridization is stronger in CeIrIn$_5$ than CeCoIn$_5$ and the effects of the hybridization on the Fermi volume increase is much smaller than predicted. By providing the first experimental evidence for $4f_{7/2}^{1}$ splittings which, in CeIrIn$_5$, split the octet into four doublets, we clearly demonstrate the many-body origin of the so-called $4f_{7/2}^{1}$ state. △ Less

Submitted 13 February, 2018; originally announced February 2018.

Tuning emission energy and fine structure splitting in quantum dots emitting in the telecom O-band

Authors: Bianca Höfer, Fabian Olbrich, Jan Kettler, Matthias Paul, Jonathan Höschele, Michael Jetter, Simone L. Portalupi, Fei Ding, Peter Michler, Oliver G. Schmidt

Abstract: We report on optical investigations of MOVPE-grown InGaAs/GaAs quantum dots emitting at the telecom O-band that were integrated onto uniaxial piezoelectric actuators. This promising technique, which does not degrade the optical quality or performances of the quantum emitters, enables us to tune the quantum dot emission wavelengths and their fine-structure splitting. By spectrally analyzing the emi… ▽ More We report on optical investigations of MOVPE-grown InGaAs/GaAs quantum dots emitting at the telecom O-band that were integrated onto uniaxial piezoelectric actuators. This promising technique, which does not degrade the optical quality or performances of the quantum emitters, enables us to tune the quantum dot emission wavelengths and their fine-structure splitting. By spectrally analyzing the emitted light with respect to its polarization, we are able to demonstrate the cancelation of the fine structure splitting within the experimental resolution limit. This work represents an important step towards the high-yield generation of entangled photon pairs at telecommunication wavelength, together with the capability to precisely tune the emission to target wavelengths. △ Less

Submitted 22 February, 2018; v1 submitted 10 February, 2018; originally announced February 2018.

MSC Class: 81V80

Vapor-Liquid-Solid Growth of Monolayer MoS2 Nanoribbons

Authors: Shisheng Li, Yung-Chang Lin, Wen Zhao, **g Wu, Zhuo Wang, Zehua Hu, Youde Shen, Dai-Ming Tang, Junyong Wang, Qi Zhang, Hai Zhu, Leiqiang Chu, Weijie Zhao, Chang Liu, Zhipei Sun, Takaaki Taniguchi, Minoru Osada, Wei Chen, Qing-Hua Xu, Andrew Thye Shen Wee, Kazu Suenaga Feng Ding, Goki Eda

Abstract: Chemical vapor deposition (CVD) of two-dimensional (2D) materials such as monolayer MoS2 typically involves the conversion of vapor-phase precursors to a solid product in a process that may be described as a vapor-solid-solid (VSS) mode. Here, we report the first demonstration of vapor-liquid-solid (VLS) growth of monolayer MoS2 yielding highly crystalline ribbon-shaped structures with a width of… ▽ More Chemical vapor deposition (CVD) of two-dimensional (2D) materials such as monolayer MoS2 typically involves the conversion of vapor-phase precursors to a solid product in a process that may be described as a vapor-solid-solid (VSS) mode. Here, we report the first demonstration of vapor-liquid-solid (VLS) growth of monolayer MoS2 yielding highly crystalline ribbon-shaped structures with a width of a few tens of nanometers to a few micrometers. The VLS growth mode is triggered by the reaction between molybdenum oxide and sodium chloride, which results in the formation of molten Na-Mo-O droplets. These droplets mediate the growth of MoS2 ribbons in the "crawling mode" when saturated with sulfur on a crystalline substrate. Our growth yields straight and kinked ribbons with a locally well-defined orientation, reflecting the regular horizontal motion of the liquid droplets during growth. Using atomic-resolution scanning transmission electron microscopy (STEM) and second harmonic generation (SHG) microscopy, we show that the ribbons are homoepitaxially on monolayer MoS2 surface with predominantly 2H- or 3R-type stacking. These findings pave the way to novel devices with structures of mixed dimensionalities. △ Less

Submitted 30 January, 2018; v1 submitted 27 January, 2018; originally announced January 2018.

Comments: 40 pages, 19 figures

Frequency Feedback for Two-Photon Interference from Separate Quantum Dots

Authors: Michael Zopf, Tobias Macha, Robert Keil, Eduardo Uruñuela, Yan Chen, Wolfgang Alt, Lothar Ratschbacher, Fei Ding, Dieter Meschede, Oliver G. Schmidt

Abstract: We employ active feedback to stabilize the frequency of single photons emitted by two separate quantum dots to an atomic standard. The transmission of a single, rubidium-based Faraday filter serves as the error signal for frequency stabilization to less than 1.5% of the emission linewidth. Long-term stability is demonstrated by Hong-Ou-Mandel interference between photons from the two quantum dots.… ▽ More We employ active feedback to stabilize the frequency of single photons emitted by two separate quantum dots to an atomic standard. The transmission of a single, rubidium-based Faraday filter serves as the error signal for frequency stabilization to less than 1.5% of the emission linewidth. Long-term stability is demonstrated by Hong-Ou-Mandel interference between photons from the two quantum dots. The observed visibility of $V_{\mathrm{lock}}=(41 \pm 5)$% is limited only by internal dephasing of the dots. Our approach facilitates quantum networks with indistinguishable photons from distributed emitters. △ Less

Submitted 21 December, 2017; originally announced December 2017.

Journal ref: Phys. Rev. B 98, 161302 (2018)

Evidence for the topological order in a kagome antiferromagnet

Authors: Yuan Wei, Zili Feng, Wiebke Lohstroh, D. H. Yu, Duc Le, Clarina dela Cruz, Wei Yi, Z. F. Ding, J. Zhang, Cheng Tan, Lei Shu, Yan-Cheng Wang, Han-Qing Wu, Jianlin Luo, Jia-Wei Mei, Fang Yang, Xian-Lei Sheng, Wei Li, Yang Qi, Zi Yang Meng, Youguo Shi, Shiliang Li

Abstract: A Z2 quantum spin liquid hosts one of the simplest topological orders and exhibits many exotic properties due to long-range quantum entanglements. Its elementary excitations are anyons such as spinons carrying fractionalized spin quantum number and visons carrying emergent Z2 gauge flux. However, experimental detection of these anyons remains elusive. The difficulties lie not only in the fact that… ▽ More A Z2 quantum spin liquid hosts one of the simplest topological orders and exhibits many exotic properties due to long-range quantum entanglements. Its elementary excitations are anyons such as spinons carrying fractionalized spin quantum number and visons carrying emergent Z2 gauge flux. However, experimental detection of these anyons remains elusive. The difficulties lie not only in the fact that there exists few candidates for Z2 quantum spin liquids but also in that visons are magnetically inert hence immune to available experimental techniques. Here we have studied the spin excitations and specific heats of kagome-lattice antiferromagnet Cu$_4$(OH)$_6$FBr and Cu$_3$Zn(OH)$_6$FBr, which consists of two-dimensional Cu$^{2+}$ kagome layers with either Cu$^{2+}$ or Zn$^{2+}$ ions in between. By combining the first principle calculations and inelastic neutron scattering data in the former, we show that the dominate couplings in Cu$_4$(OH)$_6$FBr are between the nearest neighbor spins within the kagome planes, and the kagome and interlayer spin systems are essentially decoupled above the antiferromagnetic transition temperature. The intrinsic spin excitations and specific heats of the kagome layers for Cu$_3$Zn(OH)$_6$FBr are thus derived by removing the contributions from the residual interlayer Cu$^{2+}$ magnetic impurities. Accordingly, the kagome spin system exhibits spin continuum with momentum-dependent spin gap and a large magnetic entropy at low temperature that is insensitive to magnetic field, which can be understood as the evidences of spinons and visons in this kagome quantum spin liquid candidate. Our results suggest the existence of the Z2 anyons in the material, and therefore provide a comprehensive set of evidences for the Z2 topological order in kagome quantum spin liquid and bring their choreographed entanglement dances to the stage of real materials. △ Less

Submitted 3 October, 2020; v1 submitted 9 October, 2017; originally announced October 2017.

Comments: 11 pages, 8 figures

Magic Graphene Clusters Formation in the graphene CVD growth process on Ru and Rh

Authors: Junfeng Gao, Feng Ding

Abstract: To improve atomically controlled chemical vapor deposition (CVD) growth of graphene, understanding the evolution from various carbon species to a graphene nuclei on various catalyst surfaces is essential. Experimentally, an ultra-stable carbon cluster on Ru(0001), Rh(111) surfaces was observed, while its structure and formation process were still under highly debate. Using ab initio calculations a… ▽ More To improve atomically controlled chemical vapor deposition (CVD) growth of graphene, understanding the evolution from various carbon species to a graphene nuclei on various catalyst surfaces is essential. Experimentally, an ultra-stable carbon cluster on Ru(0001), Rh(111) surfaces was observed, while its structure and formation process were still under highly debate. Using ab initio calculations and kinetic analyses, we disclosed a specific type of carbon clusters, composed of a C21 core and a few dangling C atoms around, were exceptional stable in the size range from 21 to 27. The most stable one of them, an isomer of C24 characterized as three dangling C atoms attached to the C21 (denoted as C21-3C), is the most promising candidate for the experimental observation. The ultra-stability of C21-3C originates from both the stable core and the appropriate passivation of dangling carbon atoms by the catalyst surface. △ Less

Submitted 14 July, 2017; originally announced July 2017.

Comments: Four Figures

Journal ref: Angewandte Chemie International Edition 53, 14031-14035 (2014)

Ultrafast Epitaxial Growth of Metre-Sized Single-Crystal Graphene on Industrial Cu Foil

Authors: Xiaozhi Xu, Zhihong Zhang, Jichen Dong, Ding Yi, **g**g Niu, Muhong Wu, Li Lin, Rongkang Yin, Mingqiang Li, **gyuan Zhou, Shaoxin Wang, Junliang Sun, Xiaojie Duan, Peng Gao, Ying Jiang, Xiaosong Wu, Hailin Peng, Rodney S. Ruoff, Zhongfan Liu, Dapeng Yu, Enge Wang, Feng Ding, Kaihui Liu

Abstract: A foundation of the modern technology that uses single-crystal silicon has been the growth of high-quality single-crystal Si ingots with diameters up to 12 inches or larger. For many applications of graphene, large-area high-quality (ideally of single-crystal) material will be enabling. Since the first growth on copper foil a decade ago, inch-sized single-crystal graphene has been achieved. We pre… ▽ More A foundation of the modern technology that uses single-crystal silicon has been the growth of high-quality single-crystal Si ingots with diameters up to 12 inches or larger. For many applications of graphene, large-area high-quality (ideally of single-crystal) material will be enabling. Since the first growth on copper foil a decade ago, inch-sized single-crystal graphene has been achieved. We present here the growth, in 20 minutes, of a graphene film of 5 x 50 cm2 dimension with > 99% ultra-highly oriented grains. This growth was achieved by: (i) synthesis of sub-metre-sized single-crystal Cu(111) foil as substrate; (ii) epitaxial growth of graphene islands on the Cu(111) surface; (iii) seamless merging of such graphene islands into a graphene film with high single crystallinity and (iv) the ultrafast growth of graphene film. These achievements were realized by a temperature-driven annealing technique to produce single-crystal Cu(111) from industrial polycrystalline Cu foil and the marvellous effects of a continuous oxygen supply from an adjacent oxide. The as-synthesized graphene film, with very few misoriented grains (if any), has a mobility up to ~ 23,000 cm2V-1s-1 at 4 K and room temperature sheet resistance of ~ 230 ohm/square. It is very likely that this approach can be scaled up to achieve exceptionally large and high-quality graphene films with single crystallinity, and thus realize various industrial-level applications at a low cost. △ Less

Submitted 8 July, 2017; originally announced July 2017.

Reply to "Comment on `Discovery of slow magnetic fluctuations and critical slowing down in the pseudogap phase of YBa$_2$Cu$_3$O$_y$' "

Authors: Jian Zhang, Z. F. Ding, C. Tan, K. Huang, O. O. Bernal, P. -C. Ho, G. D. Morris, A. D. Hillier, P. K. Biswas, S. P. Cottrell, H. Xiang, X. Yao, D. E. MacLaughlin, Lei Shu

Abstract: We reply to the objections raised in a recent Comment (arXiv:1706.03023) regarding our observation of slow magnetic fluctuations and critical slowing down of magnetic fluctuations in the pseudogap phase of YBa$_2$Cu$_3$O$_y$ by zero-field and longitudinal-field muon spin relaxation (arXiv:1703.06799). We reply to the objections raised in a recent Comment (arXiv:1706.03023) regarding our observation of slow magnetic fluctuations and critical slowing down of magnetic fluctuations in the pseudogap phase of YBa$_2$Cu$_3$O$_y$ by zero-field and longitudinal-field muon spin relaxation (arXiv:1703.06799). △ Less

Submitted 30 June, 2017; originally announced July 2017.

Comments: 4 pages, 3 figures