Showing 1–37 of 37 results for author: Attané, J

Gate-voltage switching of non-reciprocal transport in oxide-based Rashba interfaces

Authors: Julien Bréhin, Luis M. Vicente Arche, Sara Varotto, Srijani Mallik, Jean-Philippe Attané, Laurent Vila, Agnès Barthélémy, Nicolas Bergeal, Manuel Bibes

Abstract: The linear magnetoelectric effect (ME) is the phenomenon by which an electric field produces a magnetization. Its observation requires both time-reversal and space-inversion symmetries to be broken, as in multiferroics. While the ME effect has only been studied in insulating materials, it can actually exist in non-centrosymmetric conductors such as two-dimensional electron gases (2DEGs) with Rashb… ▽ More The linear magnetoelectric effect (ME) is the phenomenon by which an electric field produces a magnetization. Its observation requires both time-reversal and space-inversion symmetries to be broken, as in multiferroics. While the ME effect has only been studied in insulating materials, it can actually exist in non-centrosymmetric conductors such as two-dimensional electron gases (2DEGs) with Rashba spin-orbit coupling. It is then coined the Edelstein effect (EE), by which a bias voltage -- generating a charge current -- produces a transverse spin density, i.e. a magnetization. Interestingly, 2D systems are sensitive to voltage gating, which provides an extra handle to control the EE. Here, we show that the sign of the EE in a SrTiO$_3$ 2DEG can be controlled by a gate voltage. We propose various logic devices harnessing the dual control of the spin density by current and gate voltages and discuss the potential of our findings for gate-tunable non-reciprocal electronics. △ Less

Submitted 2 October, 2023; originally announced October 2023.

All-electrical detection of the spin-charge conversion in nanodevices based on SrTiO3 two-dimensional electron gases

Authors: Fernando Gallego, Felix Trier, Srijani Mallik, Julien Bréhin, Sara Varotto, Luis Moreno Vicente-Arche, Tanay Gosavy, Chia-Ching Lin, Jean-René Coudevylle, Lucía Iglesias, Félix Casanova, Ian Young, Laurent Vila, Jean-Philippe Attané, Manuel Bibes

Abstract: The Magnetoelectric Spin-Orbit (MESO) technology aims to bring logic into memory by combining a ferromagnet with a magnetoelectric (ME) element for information writing, and a spin-orbit (SO) element for information read-out through spin-charge conversion. Among candidate SO materials to achieve a large MESO output signal, oxide Rashba two-dimensional electron gases (2DEGs) have shown very large sp… ▽ More The Magnetoelectric Spin-Orbit (MESO) technology aims to bring logic into memory by combining a ferromagnet with a magnetoelectric (ME) element for information writing, and a spin-orbit (SO) element for information read-out through spin-charge conversion. Among candidate SO materials to achieve a large MESO output signal, oxide Rashba two-dimensional electron gases (2DEGs) have shown very large spin-charge conversion efficiencies, albeit mostly in spin-pum** experiments. Here, we report all-electrical spin-injection and spin-charge conversion experiments in nanoscale devices harnessing the inverse Edelstein effect of SrTiO3 2DEGs. We have designed, patterned and fabricated nanodevices in which a spin current injected from a cobalt layer into the 2DEG is converted into a charge current. We optimized the spin-charge conversion signal by applying back-gate voltages, and studied its temperature evolution. We further disentangled the inverse Edelstein contribution from spurious effects such as the planar Hall effect, the anomalous Hall effect or the anisotropic magnetoresistance. The combination of non-volatility and high energy efficiency of these devices could potentially lead to new technology paradigms for beyond-CMOS computing architectures. △ Less

Submitted 25 September, 2023; originally announced September 2023.

Spin-orbit readout using thin films of topological insulator Sb2Te3 deposited by industrial magnetron sputtering

Authors: S. Teresi, N. Sebe, T. Frottier, J. Patterson, A. Kandazoglou, P. Noël, P. Sgarro, D. Térébénec, N. Bernier, F. Hippert, J. -P. Attané, L. Vila, P. Noé, M. Cosset-Chéneau

Abstract: Driving a spin-logic circuit requires the production of a large output signal by spin-charge interconversion in spin-orbit readout devices. This should be possible by using topological insulators, which are known for their high spin-charge interconversion efficiency. However, high-quality topological insulators have so far only been obtained on a small scale, or with large scale deposition techniq… ▽ More Driving a spin-logic circuit requires the production of a large output signal by spin-charge interconversion in spin-orbit readout devices. This should be possible by using topological insulators, which are known for their high spin-charge interconversion efficiency. However, high-quality topological insulators have so far only been obtained on a small scale, or with large scale deposition techniques which are not compatible with conventional industrial deposition processes. The nanopatterning and electrical spin injection into these materials has also proven difficult due to their fragile structure and low spin conductance. We present the fabrication of a spin-orbit readout device from the topological insulator Sb2Te3 deposited by large-scale industrial magnetron sputtering on SiO2. Despite a modification of the Sb2Te3 layer structural properties during the device nanofabrication, we measured a sizeable output voltage that can be unambiguously ascribed to a spin-charge interconversion process. △ Less

Submitted 23 June, 2023; v1 submitted 18 April, 2023; originally announced April 2023.

Electrical characterization of the azimuthal anisotropy of $(\mathrm{Ni}_x\mathrm{Co}_{1-x})\mathrm{B}$-based ferromagnetic nanotubes

Authors: Dhananjay Tiwari, Martin Christoph Scheuerlein, Mahdi Jaber, Eric Gautier, Laurent Vila, Jean-Philippe Attané, Michael Schöbitz, Aurélien Masseboeuf, Tim Hellmann, Jan P. Hofmann, Wolfgang Ensinger, Olivier Fruchart

Abstract: We report on the structural, electric and magnetic properties of $(\mathrm{Ni}_x\mathrm{Co}_{1-x})\mathrm{B}$ ferromagnetic nanotubes, displaying azimuthal magnetization. The tubes are fabricated using electroless plating in polycarbonate porous templates, with lengths several tens of micrometers, diameters from 100nm to 500nm and wall thicknesses from 10nm to 80nm. The resistivity is… ▽ More We report on the structural, electric and magnetic properties of $(\mathrm{Ni}_x\mathrm{Co}_{1-x})\mathrm{B}$ ferromagnetic nanotubes, displaying azimuthal magnetization. The tubes are fabricated using electroless plating in polycarbonate porous templates, with lengths several tens of micrometers, diameters from 100nm to 500nm and wall thicknesses from 10nm to 80nm. The resistivity is $\sim 1.5\times10^{-6}\mathrm{Ω/m}$, and the anisotropic magnetoresistance~(AMR) of 0.2-0.3%, one order of magnitude larger~(resp. smaller) than in the bulk material, which we attribute to the resistance at grain boundaries. We determined the azimuthal anisotropy field from M(H) AMR loops of single tubes contacted electrically. Its magnitude is around 10mT, and tends to increase with the tube wall thickness, as well as the Co content. However, surprisingly it does not dependent much on the diameter nor on the curvature. △ Less

Submitted 10 February, 2023; originally announced February 2023.

Comments: 12 pages, 10 figures, includes methods and appendix

Non-volatile electric control of spin-orbit torques in an oxide two-dimensional electron gas

Authors: Cécile Grezes, Aurélie Kandazoglou, Maxen Cosset-Cheneau, Luis Arche, Paul Noël, Paolo Sgarro, Stephane Auffret, Kevin Garello, Manuel Bibes, Laurent Vila, Jean-Philippe Attané

Abstract: Spin-orbit torques (SOTs) have opened a novel way to manipulate the magnetization using in-plane current, with a great potential for the development of fast and low power information technologies. It has been recently shown that two-dimensional electron gases (2DEGs) appearing at oxide interfaces provide a highly efficient spin-to-charge current interconversion. The ability to manipulate 2DEGs usi… ▽ More Spin-orbit torques (SOTs) have opened a novel way to manipulate the magnetization using in-plane current, with a great potential for the development of fast and low power information technologies. It has been recently shown that two-dimensional electron gases (2DEGs) appearing at oxide interfaces provide a highly efficient spin-to-charge current interconversion. The ability to manipulate 2DEGs using gate voltages could offer a degree of freedom lacking in the classical ferromagnetic/spin Hall effect bilayers for spin-orbitronics, in which the sign and amplitude of SOTs at a given current are fixed by the stack structure. Here, we report the non-volatile electric-field control of SOTs in an oxide-based Rashba-Edelstein 2DEG. We demonstrate that the 2DEG is controlled using a back-gate electric-field, providing two remanent and switchable states, with a large resistance contrast of 1064%. The SOTs can then be controlled electrically in a non-volatile way, both in amplitude and in sign. This achievement in a 2DEG-CoFeB/MgO heterostructures with large perpendicular magnetization further validates the compatibility of oxide 2DEGs for magnetic tunnel junction integration, paving the way to the advent of electrically reconfigurable SOT MRAMS circuits, SOT oscillators, skyrmion and domain-wall-based devices, and magnonic circuits. △ Less

Submitted 7 June, 2022; originally announced June 2022.

Electrical measurement of the Spin Hall Effect isotropy in a ferromagnet

Authors: M. Cosset-Chéneau, M. Husien Fahmy, A. Kandazoglou, C. Grezes, A. Brenac, S. Teresi, P. Sgarro, P. Warin, A. Marty, V. T. Pham, J. -P. Attané, L. Vila

Abstract: The spin-dependent transport properties of paramagnetic metals are roughly invariant under rotation. By contrast, in ferromagnetic materials the magnetization breaks the rotational symmetry, and thus the spin Hall effect is expected to become anisotropic. Here, using a specific design of lateral spin valves, we measure electrically the spin Hall Effect anisotropy in NiCu and NiPd, both in their fe… ▽ More The spin-dependent transport properties of paramagnetic metals are roughly invariant under rotation. By contrast, in ferromagnetic materials the magnetization breaks the rotational symmetry, and thus the spin Hall effect is expected to become anisotropic. Here, using a specific design of lateral spin valves, we measure electrically the spin Hall Effect anisotropy in NiCu and NiPd, both in their ferromagnetic and paramagnetic phases. We show that the appearance of the ferromagnetic order does not lead to a sizeable anisotropy of the spin charge interconversion in these materials. △ Less

Submitted 23 June, 2023; v1 submitted 31 May, 2022; originally announced May 2022.

Spin to charge conversion at Rashba-split SrTiO$_3$ interfaces from resonant tunneling

Authors: D. Q. To, T. H. Dang, L. Vila, J. P. Attané, M. Bibes, H. Jaffrès

Abstract: Spin-charge interconversion is a very active direction in spintronics. Yet, the complex behaviour of some of the most promising systems such as SrTiO$_3$ (STO) interfaces is not fully understood. Here, on the basis of a 6-band $\boldsymbol{k.p}$ method combined with spin-resolved scattering theory, we give a theoretical demonstration of transverse spin-charge interconversion physics in STO Rashba… ▽ More Spin-charge interconversion is a very active direction in spintronics. Yet, the complex behaviour of some of the most promising systems such as SrTiO$_3$ (STO) interfaces is not fully understood. Here, on the basis of a 6-band $\boldsymbol{k.p}$ method combined with spin-resolved scattering theory, we give a theoretical demonstration of transverse spin-charge interconversion physics in STO Rashba interfaces. Calculations involve injection of spin current from a ferromagnetic contact by resonant tunneling into the native Rashba-split resonant levels of the STO triangular quantum well. We compute an asymmetric tunneling electronic transmission yielding a transverse charge current flowing in plane, with a dependence with gate voltage in a very good agreement with existing experimental data. △ Less

Submitted 8 January, 2022; originally announced January 2022.

Comments: 21 pages, 6 figures

Journal ref: Phys. Rev. Research 3, 043170 (2021)

Bilinear magnetoresistance in HgTe topological insulator: opposite signs at opposite interfaces demonstrated by gate control

Authors: Yu Fu, **g Li, Jules Papin, Paul Noel, Salvatore Teresi, Maxen Cosset-Cheneau, Cecile Grezes, Thomas Guillet, Candice Thomas, Yann-Michel Niquet, Philippe Ballet, Tristan Meunier, Jean-Philippe Attane, Albert Fert, Laurent Vila

Abstract: Spin-orbit effects appearing in topological insulators (TI) and at Rashba interfaces are currently revolutionizing how we can manipulate spins and have led to several newly discovered effects, from spin-charge interconversion and spin-orbit torques to novel magnetoresistance phenomena. In particular, a puzzling magnetoresistance has been evidenced, bilinear in electric and magnetic fields. Here, w… ▽ More Spin-orbit effects appearing in topological insulators (TI) and at Rashba interfaces are currently revolutionizing how we can manipulate spins and have led to several newly discovered effects, from spin-charge interconversion and spin-orbit torques to novel magnetoresistance phenomena. In particular, a puzzling magnetoresistance has been evidenced, bilinear in electric and magnetic fields. Here, we report the observation of bilinear magnetoresistance (BMR) in strained HgTe, a prototypical TI. We show that both the amplitude and sign of this BMR can be tuned by controlling, with an electric gate, the relative proportions of the opposite contributions of opposite surfaces. At magnetic fields of 1 T, the magnetoresistance is of the order of 1 \% and has a larger figure of merit than previously measured TIs. We propose a theoretical model giving a quantitative account of our experimental data. This phenomenon, unique to TI, offers novel opportunities to tune their electrical response for spintronics. △ Less

Submitted 14 February, 2023; v1 submitted 30 November, 2021; originally announced November 2021.

Comments: 6 pages 3 figures

Spin-charge interconversion in KTaO$_3$ two-dimensional electron gases

Authors: Luis M. Vicente-Arche, Julien Bréhin, Sara Varotto, Maxen Cosset-Cheneau, Srijani Mallik, Raphaël Salazar, Paul Noël, Diogo Castro Vaz, Felix Trier, Suvam Bhattacharya, Anke Sander, Patrick Le Fèvre, François Bertran, Guilhem Saiz, Gerbold Ménard, Nicolas Bergeal, Agnès Barthélémy, Hai Li, Chia-Ching Lin, Dmitri E. Nikonov, Ian A. Young, Julien Rault, Laurent Vila, Jean-Philippe Attané, Manuel Bibes

Abstract: Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE an… ▽ More Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE and IEE have been investigated in interfaces based on the perovskite SrTiO$_3$ (STO), albeit in separate studies focusing on one or the other. The demonstration of these effects remains mostly elusive in other oxide interface systems despite their blossoming in the last decade. Here, we report the observation of both the DEE and IEE in a new interfacial two-dimensional electron gas (2DEG) based on the perovskite oxide KTaO$_3$. We generate 2DEGs by the simple deposition of Al metal onto KTaO$_3$ single crystals, characterize them by angle-resolved photoemission spectroscopy and magnetotransport, and demonstrate the DEE through unidirectional magnetoresistance and the IEE by spin-pum** experiments. We compare the spin-charge interconversion efficiency with that of STO-based interfaces, relate it to the 2DEG electronic structure, and give perspectives for the implementation of KTaO$_3$ 2DEGs into spin-orbitronic devices. △ Less

Submitted 17 August, 2021; originally announced August 2021.

Journal ref: Adv. Mater. 202102102 (2021)

Oxide spin-orbitronics: spin-charge interconversion and topological spin textures

Authors: Felix Trier, Paul Noël, Joo-Von Kim, Jean-Philippe Attané, Laurent Vila, Manuel Bibes

Abstract: Quantum oxide materials possess a vast range of properties stemming from the interplay between the lattice, charge, spin and orbital degrees of freedom, in which electron correlations often play an important role. Historically, the spin-orbit coupling was rarely a dominant energy scale in oxides. It however recently came to the forefront, unleashing various exotic phenomena connected with real and… ▽ More Quantum oxide materials possess a vast range of properties stemming from the interplay between the lattice, charge, spin and orbital degrees of freedom, in which electron correlations often play an important role. Historically, the spin-orbit coupling was rarely a dominant energy scale in oxides. It however recently came to the forefront, unleashing various exotic phenomena connected with real and reciprocal-space topology that may be harnessed in spintronics. In this article, we review the recent advances in the new field of oxide spin-orbitronics with a special focus on spin-charge interconversion from the direct and inverse spin Hall and Edelstein effects, and on the generation and observation of topological spin textures such as skyrmions. We highlight the control of spin-orbit-driven effects by ferroelectricity and give perspectives for the field. △ Less

Submitted 30 March, 2021; originally announced March 2021.

Comments: Submitted to Nature Reviews Materials

Room-temperature ferroelectric switching of spin-to-charge conversion in GeTe

Authors: Sara Varotto, Luca Nessi, Stefano Cecchi, Jagoda Sławińska, Paul Noël, Simone Petrò, Federico Fagiani, Alessandro Novati, Matteo Cantoni, Daniela Petti, Edoardo Albisetti, Marcio Costa, Raffaella Calarco, Marco Buongiorno Nardelli, Manuel Bibes, Silvia Picozzi, Jean-Philippe Attané, Laurent Vila, Riccardo Bertacco, Christian Rinaldi

Abstract: Since its birth in the 1990s, semiconductor spintronics has suffered from poor compatibility with ferromagnets as sources of spin. While the broken inversion symmetry of some semiconductors may alternatively allow for spin-charge interconversion, its control by electric fields is volatile. Ferroelectric Rashba semiconductors stand as appealing materials unifying semiconductivity, large spin-orbit… ▽ More Since its birth in the 1990s, semiconductor spintronics has suffered from poor compatibility with ferromagnets as sources of spin. While the broken inversion symmetry of some semiconductors may alternatively allow for spin-charge interconversion, its control by electric fields is volatile. Ferroelectric Rashba semiconductors stand as appealing materials unifying semiconductivity, large spin-orbit coupling, and non-volatility endowed by ferroelectricity. However, their potential for spintronics has been little explored. Here, we demonstrate the non-volatile, ferroelectric control of spin-to-charge conversion at room temperature in epitaxial GeTe films. We show that ferroelectric switching by electrical gating is possible in GeTe despite its high carrier density. We reveal a spin-to-charge conversion as effective as in Pt, but whose sign is controlled by the orientation of the ferroelectric polarization. The comparison between theoretical and experimental data suggests that spin Hall effect plays a major role for switchable conversion. These results open a route towards devices combining spin-based logic and memory integrated into a silicon-compatible material. △ Less

Submitted 13 March, 2021; originally announced March 2021.

Comments: 21 pages, 4 figures

Journal ref: Nature Electronics volume 4, 740 (2021)

Metal/SrTiO$_3$ two-dimensional electron gases for spin-to-charge conversion

Authors: Luis M. Vicente-Arche, Srijani Mallik, Maxen Cosset-Cheneau, Paul Noël, Diogo Vaz, Felix Trier, Tanay A. Gosavi, Chia-Ching Lin, Dmitri E. Nikonov, Ian A. Young, Anke Sander, Agnès Barthélémy, Jean-Philippe Attané, Laurent Vila, Manuel Bibes

Abstract: SrTiO$_3$-based two-dimensional electron gases (2DEGs) can be formed through the deposition of epitaxial oxides like LaAlO$_3$ or of reactive metals such as Al. Such 2DEGs possess a finite Rashba spin-orbit coupling that has recently been harnessed to interconvert charge and spin currents through the direct and inverse Edelstein and spin Hall effects. Here we compare the formation and properties o… ▽ More SrTiO$_3$-based two-dimensional electron gases (2DEGs) can be formed through the deposition of epitaxial oxides like LaAlO$_3$ or of reactive metals such as Al. Such 2DEGs possess a finite Rashba spin-orbit coupling that has recently been harnessed to interconvert charge and spin currents through the direct and inverse Edelstein and spin Hall effects. Here we compare the formation and properties of 2DEGs generated in SrTiO$_3$ by the growth of Al, Ta and Y ultrathin films by magnetron sputtering. By combining in situ and ex situ X-ray photoelectron spectroscopy (XPS) we gain insight into the reduction of the SrTiO$_3$ and the appearance of Ti$^{3+}$ states associated with 2DEG formation, its reoxidation by exposure to the air, and the transformation of the metal into its binary oxides. We extract the carrier densities through magnetotransport and compare them with the XPS data. Finally, working with samples covered by an extra layer of NiFe, we perform spin-pum** ferromagnetic resonance experiments and investigate spin-charge conversion as a function of gate voltage. We identify trends in the data across the different sample systems and discuss them as a function of the carrier density and the transparency of the metal oxide tunnel barrier. △ Less

Submitted 5 February, 2021; originally announced February 2021.

Journal ref: Phys. Rev. Materials 5, 064005 (2021)

Current-driven domain wall dynamics in ferrimagnetic Ni-doped Mn4N films : very large domain wall velocities and reversal of motion direction across the magnetic compensation point

Authors: Sambit Ghosh, Taro Komori, Ali Hallal, Jose Peña Garcia, Toshiki Gushi, Taku Hirose, Haruka Mitarai, Hanako Okuno, Jan Vogel, Mairbek Chshiev, Jean-Philippe Attané, Laurent Vila, Takashi Suemasu, Stefania Pizzini

Abstract: Spin-transfer torque (STT) and spin-orbit torque (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, they allow develo** new classes of magnetic memories and logic devices, in particular based on domain wall (DW) motion. In this work, we report the study of STT driven DW motion in ferrimagnetic manganese nickel nitride… ▽ More Spin-transfer torque (STT) and spin-orbit torque (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, they allow develo** new classes of magnetic memories and logic devices, in particular based on domain wall (DW) motion. In this work, we report the study of STT driven DW motion in ferrimagnetic manganese nickel nitride (Mn4-xNixN) films, in which a fine adjustment of the Ni content allows setting the magnetic compensation at room temperature. The reduced magnetization, combined with the large spin polarization of conduction electrons, strongly enhances the STT so that domain wall velocities approaching 3000 m/s can be obtained for Ni compositions close to the compensation point. In addition, a reversal of the domain wall motion direction is observed when the magnetic compensation composition is crossed. This striking feature, related to the change of direction of the spin polarization with respect to that of the net magnetization, is clarified by ab initio band structure calculations. △ Less

Submitted 11 March, 2021; v1 submitted 11 January, 2021; originally announced January 2021.

Comments: 24 pages, 4 figures

Evidence of interfacial asymmetric spin scattering at ferromagnet-Pt interfaces

Authors: Van Tuong Pham, Maxen Cosset-Cheneau, Ariel Brenac, Olivier Boulle, Alain Marty, Jean-Philippe Attané, Laurent Vila

Abstract: We measure the spin-charge interconversion by the spin Hall effect in ferromagnetic/Pt nanodevices. The extracted effective spin Hall angles (SHAs) of Pt evolve drastically with the ferromagnetic (FM) materials (CoFe, Co, and NiFe), when assuming transparent interfaces and a bulk origin of the spin injection/detection by the FM elements. By carefully measuring the interface resistance, we show tha… ▽ More We measure the spin-charge interconversion by the spin Hall effect in ferromagnetic/Pt nanodevices. The extracted effective spin Hall angles (SHAs) of Pt evolve drastically with the ferromagnetic (FM) materials (CoFe, Co, and NiFe), when assuming transparent interfaces and a bulk origin of the spin injection/detection by the FM elements. By carefully measuring the interface resistance, we show that it is quite large and cannot be neglected. We then evidence that the spin injection/detection at the FM/Pt interfaces are dominated by the spin polarization of the interfaces. We show that interfacial asymmetric spin scattering becomes the driving mechanism of the spin injection in our samples. △ Less

Submitted 9 April, 2021; v1 submitted 24 November, 2020; originally announced November 2020.

Comments: 10 pages, 4 figures

Journal ref: Phys. Rev. B 103, 201403 (2021)

Measurement of the Spin Absorption Anisotropy in Lateral Spin Valves

Authors: Maxen Cosset-Chéneau, Laurent Vila, Gilles Zahnd, Daria Gusakova, Van Tuong Pham, Cécile Grèzes, Xavier Waintal, Alain Marty, Henri Jaffrès, Jean-Philippe Attané

Abstract: The spin absorption process in a ferromagnetic material depends on the spin orientation relativelyto the magnetization. Using a ferromagnet to absorb the pure spin current created within a lateralspin-valve, we evidence and quantify a sizeable orientation dependence of the spin absorption inCo, CoFe and NiFe. These experiments allow determining the spin-mixing conductance, an elusivebut fundamenta… ▽ More The spin absorption process in a ferromagnetic material depends on the spin orientation relativelyto the magnetization. Using a ferromagnet to absorb the pure spin current created within a lateralspin-valve, we evidence and quantify a sizeable orientation dependence of the spin absorption inCo, CoFe and NiFe. These experiments allow determining the spin-mixing conductance, an elusivebut fundamental parameter of the spin-dependent transport. We show that the obtained valuescannot be understood within a model considering only the Larmor, transverse decoherence and spindiffusion lengths, and rather suggest that the spin-mixing conductance is actually limited by theSharvin conductance. △ Less

Submitted 28 July, 2020; originally announced July 2020.

Journal ref: Phys. Rev. Lett. 126, 027201 (2021)

A switchable two-dimensional electron gas based on ferroelectric Ca:SrTiO$_3$

Authors: Julien Bréhin, Felix Trier, Luis M. Vicente-Arche, Pierre Hemme, Paul Noël, Maxen Cosset-Chéneau, Jean-Philippe Attané, Laurent Vila, Anke Sander, Yann Gallais, Alain Sacuto, Brahim Dkhil, Vincent Garcia, Stéphane Fusil, Agnès Barthélémy, Maximilien Cazayous, Manuel Bibes

Abstract: Two-dimensional electron gases (2DEGs) can form at the surface of oxides and semiconductors or in carefully designed quantum wells and interfaces. Depending on the shape of the confining potential, 2DEGs may experience a finite electric field, which gives rise to relativistic effects such as the Rashba spin-orbit coupling. Although the amplitude of this electric field can be modulated by an extern… ▽ More Two-dimensional electron gases (2DEGs) can form at the surface of oxides and semiconductors or in carefully designed quantum wells and interfaces. Depending on the shape of the confining potential, 2DEGs may experience a finite electric field, which gives rise to relativistic effects such as the Rashba spin-orbit coupling. Although the amplitude of this electric field can be modulated by an external gate voltage, which in turn tunes the 2DEG carrier density, sheet resistance and other related properties, this modulation is volatile. Here, we report the design of a ''ferroelectric'' 2DEG whose transport properties can be electrostatically switched in a non-volatile way. We generate a 2DEG by depositing a thin Al layer onto a SrTiO$_3$ single crystal in which 1 percent of Sr is substituted by Ca to make it ferroelectric. Signatures of the ferroelectric phase transition at 25 K are visible in the Raman response and in the temperature dependences of the carrier density and sheet resistance that shows a hysteretic dependence on electric field as a consequence of ferroelectricity. We suggest that this behavior may be extended to other oxide 2DEGs, leading to novel types of ferromagnet-free spintronic architectures. △ Less

Submitted 7 July, 2020; originally announced July 2020.

Journal ref: Published on April 16, 2020 as Phys. Rev. Materials 4, 041002(R) (2020)

Independence of the inverse spin Hall effect with the magnetic phase in thin NiCu films

Authors: Sara Varotto, Maxen Cosset-Cheneau, Cécile Grezes, Yu Fu, Patrick Warin, Ariel Brenac, Jean-François Jacquot, Serge Gambarelli, Christian Rinaldi, Vincent Baltz, Jean-Philippe Attané, Laurent Vila, Paul Noël

Abstract: Large spin Hall angles have been observed in 3d ferromagnets, but their origin, and especially their link with the ferromagnetic order, remain unclear. Here, we investigate the inverse spin Hall effect of Ni60Cu40 and Ni50Cu50 across their Curie temperature using spin pum** experiments. We evidence that the inverse spin Hall effect in these samples is comparable to that of platinum, and that it… ▽ More Large spin Hall angles have been observed in 3d ferromagnets, but their origin, and especially their link with the ferromagnetic order, remain unclear. Here, we investigate the inverse spin Hall effect of Ni60Cu40 and Ni50Cu50 across their Curie temperature using spin pum** experiments. We evidence that the inverse spin Hall effect in these samples is comparable to that of platinum, and that it is insensitive to the magnetic order. These results points towards a Heisenberg localized model of the transition, and suggest that the large spin Hall effects in 3d ferromagnets can be independent of the magnetic phase. △ Less

Submitted 16 May, 2020; originally announced May 2020.

Comments: 3 figures

Journal ref: Phys. Rev. Lett. 125, 267204 (2020)

Negligible thermal contributions to the spin pum** signal in ferromagnetic metal-Platinum bilayers

Authors: Paul Noël, Maxen Cosset-Cheneau, Victor Haspot, Vincent Maurel, Christian Lombard, Manuel Bibes, Agnès Barthelemy, Laurent Vila, Jean-Philippe Attané

Abstract: Spin pum** by ferromagnetic resonance is one of the most common technique to determine spin hall angles, Edelstein lengths or spin diffusion lengths of a large variety of materials. In recent years, rising concerns have appeared regarding the interpretation of these experiments, underlining that the signal could arise purely from thermoelectric effects, rather than from coherent spin pum**. He… ▽ More Spin pum** by ferromagnetic resonance is one of the most common technique to determine spin hall angles, Edelstein lengths or spin diffusion lengths of a large variety of materials. In recent years, rising concerns have appeared regarding the interpretation of these experiments, underlining that the signal could arise purely from thermoelectric effects, rather than from coherent spin pum**. Here, we propose a method to evaluate the presence or absence of thermal effects in spin pum** signals, by combining bolometry and spin pum** by ferromagnetic resonance measurements, and comparing their timescale. Using a cavity to perform the experiments on Pt\Permalloy and La0.7Sr0.3MnO3\Pt samples, we conclude on the absence of any measurable thermoelectric contribution such as the spin Seebeck and anomalous Nernst effects at resonance △ Less

Submitted 13 April, 2020; v1 submitted 2 May, 2019; originally announced May 2019.

Comments: 5 figures

Spin dependent transport characterization in metallic lateral spin valves using 1D and 3D modeling

Authors: P. Laczkowski, M. Cosset-Cheneau, W. Savero-Torres, V. T. Pham, H. Jaffrès, N. Reyren, J. -C. Rojas-Sànchez, A. Marty, L. Vila, J. -M. George, J. -P. Attané

Abstract: We present the analysis of the spin signals obtained in NiFe based metallic lateral spin valves. We exploit the spin dependent diffusive equations in both the conventional 1D analytic modeling as well as in 3D Finite Element Method simulations. Both approaches are used for extracting the spin diffusion length $l_{sf}^{N}$ and the effective spin polarization $P_{eff}$ in Py/Al, Py/Cu and Py/Au base… ▽ More We present the analysis of the spin signals obtained in NiFe based metallic lateral spin valves. We exploit the spin dependent diffusive equations in both the conventional 1D analytic modeling as well as in 3D Finite Element Method simulations. Both approaches are used for extracting the spin diffusion length $l_{sf}^{N}$ and the effective spin polarization $P_{eff}$ in Py/Al, Py/Cu and Py/Au based lateral nano-structures at both $300\,K$ and $77\,K$. Both the analytic modeling and 3D Finite Element Method simulations give consistent results. Combination of both models provides a powerful tool for reliable spin transport characterization in all metallic spin valves and gives an insight into the spin/charge current and spin accumulations 3D distributions in these devices. We provide the necessary ingredients to develop the 3D finite element modeling of diffusive spin transport. △ Less

Submitted 18 March, 2019; v1 submitted 6 March, 2019; originally announced March 2019.

Comments: 8 pages, 6 figures

Journal ref: Phys. Rev. B 99, 134436 (2019)

Mn4N ferrimagnetic thin films for sustainable spintronics

Authors: T. Gushi, M. Jovičević Klug, J. Peña Garcia, H. Okuno, J. Vogel, J. P. Attané, T. Suemasu, S. Pizzini, L. Vila

Abstract: Spintronics, which is the basis of a low-power, beyond-CMOS technology for computational and memory devices, remains up to now entirely based on critical materials such as Co, heavy metals and rare-earths. Here, we show that Mn4N, a rare-earth free ferrimagnet made of abundant elements, is an exciting candidate for the development of sustainable spintronics devices. Mn4N thin films grown epitaxial… ▽ More Spintronics, which is the basis of a low-power, beyond-CMOS technology for computational and memory devices, remains up to now entirely based on critical materials such as Co, heavy metals and rare-earths. Here, we show that Mn4N, a rare-earth free ferrimagnet made of abundant elements, is an exciting candidate for the development of sustainable spintronics devices. Mn4N thin films grown epitaxially on SrTiO3 substrates possess remarkable properties, such as a perpendicular magnetisation, a very high extraordinary Hall angle (2%) and smooth domain walls, at the millimeter scale. Moreover, domain walls can be moved at record speeds by spin polarised currents, in absence of spin-orbit torques. This can be explained by the large efficiency of the adiabatic spin transfer torque, due to the conjunction of a reduced magnetisation and a large spin polarisation. Finally, we show that the application of gate voltages through the SrTiO3 substrates allows modulating the Mn4N coercive field with a large efficiency. △ Less

Submitted 4 March, 2019; v1 submitted 21 January, 2019; originally announced January 2019.

Comments: 13 pages, 4 figures, and supplementary information

Millimeter-sized magnetic domains in perpendicularly magnetized ferrimagnetic Mn4N thin films grown on SrTiO3

Authors: Toshiki Gushi, Laurent Vila, Olivier Fruchart, Alain Marty, Stefania Pizzini, Jan Vogel, Fumiya Takata, Akihito Anzai, Kaoru Toko, Takashi Suemasu, Jean-Philippe Attané

Abstract: The use of epitaxial layers for domain wall-based spintronic applications is often hampered by the presence of pinning sites. Here, we show that when depositing Mn4N(10 nm) epitaxial films, the replacement of MgO(001) by SrTiO3(001) substrates allows minimizing the misfit, and to obtain an improved crystalline quality, a sharper switching, a full remanence, a high anisotropy and remarkable millime… ▽ More The use of epitaxial layers for domain wall-based spintronic applications is often hampered by the presence of pinning sites. Here, we show that when depositing Mn4N(10 nm) epitaxial films, the replacement of MgO(001) by SrTiO3(001) substrates allows minimizing the misfit, and to obtain an improved crystalline quality, a sharper switching, a full remanence, a high anisotropy and remarkable millimeter-sized magnetic domains, with straight and smooth domain walls. In a context of rising interest for current-induced domain wall motion in rare △ Less

Submitted 31 October, 2018; originally announced October 2018.

Spin diffusion length and polarization of ferromagnetic metals measured by spin-absorption technique in lateral spin valves

Authors: G. Zahnd, Laurent Vila, V. Pham, M Cosset-Cheneau, W Lim, A Brenac, P Laczkowski, A Marty, J Attané

Abstract: We present measurements of pure spin current absorption on lateral spin valves. By varying the width of the absorber we demonstrate that spin current absorption measurements enable to characterize efficiently the spin transport properties of ferromagnetic elements. The analytical model used to describe the measurement takes into account the polarization of the absorber. The analysis of the measure… ▽ More We present measurements of pure spin current absorption on lateral spin valves. By varying the width of the absorber we demonstrate that spin current absorption measurements enable to characterize efficiently the spin transport properties of ferromagnetic elements. The analytical model used to describe the measurement takes into account the polarization of the absorber. The analysis of the measurements allows thus determining the polarization and the spin diffusion length of a studied material independently, contrarily to most experiments based on lateral spin valves where those values are entangled. We report the spin transport parameters of some of the most important materials used in spinorbitronics (Co60Fe40, Ni81Fe19, Co, Pt, and Ta), at room and low (10 K) temperatures. △ Less

Submitted 31 October, 2018; originally announced October 2018.

Comments: Physical Review B, In press

Cross-shaped nanostructures for the study of spin to charge interconversions using spin-orbit coupling in non-magnetic materials

Authors: V. T. Pham, L. Vila, G. Zahnd, P. Noël, A. Marty, J. P. Attané

Abstract: Several spin-orbit effects allow performing spin to charge inter-conversion: the spin Hall effects, the Rashba effect, or the spin-momentum locking in topological insulators. Here we focus on how the detection of this inter-conversion can be made electrically, using three different cross-shaped nanostructures. We apply these measurement configurations to the case of the spin Hall effect in Pt, usi… ▽ More Several spin-orbit effects allow performing spin to charge inter-conversion: the spin Hall effects, the Rashba effect, or the spin-momentum locking in topological insulators. Here we focus on how the detection of this inter-conversion can be made electrically, using three different cross-shaped nanostructures. We apply these measurement configurations to the case of the spin Hall effect in Pt, using CoFe electrodes to detect and inject spins. Both the direct and inverse spin Hall effect can be detected, with a spin Hall signal up to two order of magnitude higher than that of nonlocal measurements in metallic lateral spin valves, and with a much simpler fabrication protocol. We compare the respective signal amplitude of the three proposed geometries. Finally, comparison of the observed spin signals with finite element method calculations allows extracting the spin Hall angle and the spin diffusion length of Pt. △ Less

Submitted 17 September, 2018; originally announced September 2018.

Comments: 12 pages, 4 figures

Large enhancement of the spin Hall effect in Au by scattering with side-jump on Ta impurities

Authors: P. Laczkowski, Y. Fu, H. Yang, J. -C. Rojas-Sánchez, P. Noel, V. T. Pham, G. Zahnd, C. Deranlot, S. Collin, C. Bouard, P. Warin, V. Maurel, M. Chshiev, A. Marty, J. -P. Attané, A. Fert, H. Jaffrès, L. Vila, J. -M. George

Abstract: We present measurements of the Spin Hall Effect (SHE) in AuW and AuTa alloys for a large range of W or Ta concentrations by combining experiments on lateral spin valves and Ferromagnetic-Resonance/spin pum** technique. The main result is the identification of a large enhancement of the Spin Hall Angle (SHA) by the side-jump mechanism on Ta impurities, with a SHA as high as + 0.5 (i.e $50\%$) for… ▽ More We present measurements of the Spin Hall Effect (SHE) in AuW and AuTa alloys for a large range of W or Ta concentrations by combining experiments on lateral spin valves and Ferromagnetic-Resonance/spin pum** technique. The main result is the identification of a large enhancement of the Spin Hall Angle (SHA) by the side-jump mechanism on Ta impurities, with a SHA as high as + 0.5 (i.e $50\%$) for about 10\% of Ta. In contrast the SHA in AuW does not exceed + 0.15 and can be explained by intrinsic SHE of the alloy without significant extrinsic contribution from skew or side-jump scattering by W impurities. The AuTa alloys, as they combine a very large SHA with a moderate resistivity (smaller than $85\,μΩ.cm$), are promising for spintronic devices exploiting the SHE. △ Less

Submitted 30 August, 2017; originally announced August 2017.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 96, 140405 (2017)

Highly efficient spin-to-charge current conversion at room temperature in strained HgTe surface states

Authors: P. Noël, C. Thomas, Y. Fu, L. Vila, B. Haas, P. H. Jouneau, S. Gambarelli, T. Meunier, P. Ballet, J. P. Attané

Abstract: We report the observation of spin-to-charge current conversion in strained mercury telluride at room temperature, using spin pum** experiments. The conversion rates are found to be very high, with inverse Edelstein lengths up to 2.0 +/- 0.5 nm. The influence of the HgTe layer thickness on the conversion efficiency has been studied, as well as the role of a HgCdTe barrier inserted in-between the… ▽ More We report the observation of spin-to-charge current conversion in strained mercury telluride at room temperature, using spin pum** experiments. The conversion rates are found to be very high, with inverse Edelstein lengths up to 2.0 +/- 0.5 nm. The influence of the HgTe layer thickness on the conversion efficiency has been studied, as well as the role of a HgCdTe barrier inserted in-between the HgTe and NiFe layers. These measurements, associated to the temperature dependence of the resistivity, allows to ascribe these high conversion rates to the spin momentum locking property of HgTe surface states. △ Less

Submitted 17 August, 2017; originally announced August 2017.

Journal ref: Phys. Rev. Lett. 120, 167201 (2018)

Spin conductance of YIG thin films driven from thermal to subthermal magnons regime by large spin-orbit torque

Authors: Nicolas Thiery, Antoine Draveny, Vladimir V. Naletov, Laurent Vila, Jean-Philippe Attané, Grégoire de Loubens, Michel Viret, Nathan Beaulieu, Jamal Ben Youssef, Vladislav E. Demidov, Sergej O. Demokritov, Andrei N. Slavin, Vasyl S. Tiberkevich, Abdelmadjid Anane, Paolo Bortolotti, Vincent Cros, Olivier Klein

Abstract: We report a study on spin conductance in ultra-thin films of Yttrium Iron Garnet (YIG), where spin transport is provided by propagating spin waves, that are generated and detected by direct and inverse spin Hall effects in two Pt wires deposited on top. While at low current the spin conductance is dominated by transport of thermal magnons, at high current, the spin conductance is dominated by low-… ▽ More We report a study on spin conductance in ultra-thin films of Yttrium Iron Garnet (YIG), where spin transport is provided by propagating spin waves, that are generated and detected by direct and inverse spin Hall effects in two Pt wires deposited on top. While at low current the spin conductance is dominated by transport of thermal magnons, at high current, the spin conductance is dominated by low-dam** non-equilibrium magnons thermalized near the spectral bottom by magnon-magnon interaction, with consequent a sensitivity to the applied magnetic field and a longer decay length. This picture is supported by microfocus Brillouin Light Scattering spectroscopy. △ Less

Submitted 17 September, 2017; v1 submitted 17 February, 2017; originally announced February 2017.

Journal ref: Phys. Rev. B 97, 060409 (2018)

Non-local opto-electrical spin injection and detection in germanium at room temperature

Authors: Fabien Rortais, Carlo Zucchetti, Lavinia Ghirardini, Alberto Ferrari, Céline Vergnaud, Julie Widiez, Alain Marty, Jean-Philippe Attané, Henri Jaffrès, Jean-Marie George, Michele Celebrano, Giovanni Isella, Franco Ciccacci, Marco Finazzi, Federico Bottegoni, Matthieu Jamet

Abstract: Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a "source" and a well separated "drain". The next generation electronics may operate on the spin of carriers instead of their charge and germanium appears as the best… ▽ More Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a "source" and a well separated "drain". The next generation electronics may operate on the spin of carriers instead of their charge and germanium appears as the best hosting material to develop such a platform for its compatibility with mainstream silicon technology and the long electron spin lifetime at room temperature. Moreover, the energy proximity between the direct and indirect bandgaps allows for optical spin injection and detection within the telecommunication window. In this letter, we demonstrate injection of pure spin currents (\textit{i.e.} with no associated transport of electric charges) in germanium, combined with non-local spin detection blocks at room temperature. Spin injection is performed either electrically through a magnetic tunnel junction (MTJ) or optically, exploiting the ability of lithographed nanostructures to manipulate the distribution of circularly-polarized light in the semiconductor. Pure spin current detection is achieved using either a MTJ or the inverse spin-Hall effect (ISHE) across a platinum stripe. These results broaden the palette of tools available for the realization of opto-spintronic devices. △ Less

Submitted 29 December, 2016; originally announced December 2016.

Comments: 14 pages and 5 figures

Highly efficient and tuneable spin-to-charge conversion through Rashba coupling at oxide interfaces

Authors: E. Lesne, Y. Fu, S. Oyarzun, J. C. Rojas-Sanchez, D. C. Vaz, H. Naganuma, G. Sicoli, J. -P. Attane, M. Jamet, E. Jacquet, J. -M. George, A. Barthelemy, H. Jaffres, A. Fert, M. Bibes, L. Vila

Abstract: The spin-orbit interaction couples the electrons' motion to their spin. Accordingly, passing a current in a material with strong spin-orbit coupling generates a transverse spin current (spin Hall effect, SHE) and vice-versa (inverse spin Hall effect, ISHE). The emergence of SHE and ISHE as charge-to-spin interconversion mechanisms offers a variety of novel spintronics functionalities and devices,… ▽ More The spin-orbit interaction couples the electrons' motion to their spin. Accordingly, passing a current in a material with strong spin-orbit coupling generates a transverse spin current (spin Hall effect, SHE) and vice-versa (inverse spin Hall effect, ISHE). The emergence of SHE and ISHE as charge-to-spin interconversion mechanisms offers a variety of novel spintronics functionalities and devices, some of which do not require any ferromagnetic material. However, the interconversion efficiency of SHE and ISHE (spin Hall angle) is a bulk property that rarely exceeds ten percent, and does not take advantage of interfacial and low-dimensional effects otherwise ubiquitous in spintronics hetero- and mesostructures. Here, we make use of an interface-driven spin-orbit coupling mechanism - the Rashba effect - in the oxide two-dimensional electron system (2DES) LaAlO3/SrTiO3 to achieve spin-to-charge conversion with unprecedented efficiency. Through spin-pum**, we inject a spin current from a NiFe film into the oxide 2DES and detect the resulting charge current, which can be strongly modulated by a gate voltage. We discuss the amplitude of the effect and its gate dependence on the basis of the electronic structure of the 2DES. △ Less

Submitted 21 September, 2016; originally announced September 2016.

Comments: Final version just published in Nature Materials. Contact author for a reprint

Journal ref: Nature Materials (2016); doi:10.1038/nmat4726

Evaluation of the spin diffusion length of AuW alloy by spin absorption experiments in the limit of large spin-orbit interactions

Authors: P. Laczkowski, H. Jaffrès, W. Savero-Torres, J. -C. Rojas-Sánchez, Y. Fu, N. Reyren, C. Deranlot, L. Notin, C. Beigné, J. -P. Attané, L. Vila, J. -M. George, A. Marty

Abstract: The knowledge of the spin diffusion length $λ_{A}$ is a prerequisite for the estimation of the spin Hall angle. We investigate spin current absorption of materials with small $λ_{A}$ using AuW stripes inserted in lateral spin-valves. Width variations of the AuW stripe lead to drastic changes of the spin absorption, which cannot be explained by conventional analysis. We show that the spin-current p… ▽ More The knowledge of the spin diffusion length $λ_{A}$ is a prerequisite for the estimation of the spin Hall angle. We investigate spin current absorption of materials with small $λ_{A}$ using AuW stripes inserted in lateral spin-valves. Width variations of the AuW stripe lead to drastic changes of the spin absorption, which cannot be explained by conventional analysis. We show that the spin-current polarization and the spin accumulation attenuation in the vicinity of the spin absorber must to be precisely taken into account for accurate estimation of $λ_{A}$. We propose an analytical model supported by numerical calculations that allows to extract proper $λ_{A}$ values of spin Hall effect materials. △ Less

Submitted 27 October, 2015; v1 submitted 16 July, 2015; originally announced July 2015.

Comparison of the use of NiFe and CoFe as electrodes for metallic lateral spin-valves

Authors: G. Zahnd, L. Vila, T. V. Pham, A. Marty, P. Laczkowski, W. Savero Torres, C. Beigné, C. Vergnaud, M. Jamet, J. -P. Attané

Abstract: Spin injection and detection in Co60Fe40-based all-metallic lateral spin-valves have been studied at both room and low temperatures. The obtained spin signals amplitudes have been compared to that of identical Ni80Fe20-based devices. The replacement of Ni80Fe20 by CoFe allows increasing the spin signal amplitude by up to one order of magnitude, thus reaching 50 mΩ at room temperature. The spin sig… ▽ More Spin injection and detection in Co60Fe40-based all-metallic lateral spin-valves have been studied at both room and low temperatures. The obtained spin signals amplitudes have been compared to that of identical Ni80Fe20-based devices. The replacement of Ni80Fe20 by CoFe allows increasing the spin signal amplitude by up to one order of magnitude, thus reaching 50 mΩ at room temperature. The spin signal dependence with the distance between the ferromagnetic electrodes has been analyzed using both a 1D spin transport model and finite elements method simulations. The enhancement of the spin signal amplitude when using CoFe electrodes can be explained by a higher effective polarization. △ Less

Submitted 12 November, 2015; v1 submitted 3 July, 2015; originally announced July 2015.

Comments: 8 pages and 4 figures

Calculation method of spin accumulations and spin signals in nanostructures using spin resistors

Authors: W. Savero Torres, A. Marty, P. Laczkowski, L. Vila, M. Jamet, J-P. Attané

Abstract: The understanding and calculation of spin transport are essential elements for the development of spintronics devices. Here, we propose a simple method to calculate analytically the spin accumulations, spin currents and magnetoresistances in complex systems. This can be used both for CPP experiments in multilayers and for multiterminal nanostructures made of semiconductors, oxides, metals and carb… ▽ More The understanding and calculation of spin transport are essential elements for the development of spintronics devices. Here, we propose a simple method to calculate analytically the spin accumulations, spin currents and magnetoresistances in complex systems. This can be used both for CPP experiments in multilayers and for multiterminal nanostructures made of semiconductors, oxides, metals and carbon allotropes. △ Less

Submitted 8 June, 2015; v1 submitted 3 June, 2015; originally announced June 2015.

Comments: 12 pages and 7 figures

Experimental evidences of a large extrinsic spin Hall effect in AuW alloy

Authors: P. Laczkowski, J. -C. Rojas-Sánchez, W. Savero-Torres, H. Jaffrès, N. Reyren, C. Deranlot, L. Notin, C. Beigné, A. Marty, J. -P. Attané, L. Vila, J. -M. George, A. Fert

Abstract: We report an experimental study of a gold-tungsten alloy (7% at. W concentration in Au host) displaying remarkable properties for spintronics applications using both magneto-transport in lateral spin valve devices and spin-pum** with inverse spin Hall effect experiments. A very large spin Hall angle of about 10% is consistently found using both techniques with the reliable spin diffusion length… ▽ More We report an experimental study of a gold-tungsten alloy (7% at. W concentration in Au host) displaying remarkable properties for spintronics applications using both magneto-transport in lateral spin valve devices and spin-pum** with inverse spin Hall effect experiments. A very large spin Hall angle of about 10% is consistently found using both techniques with the reliable spin diffusion length of 2 nm estimated by the spin sink experiments in the lateral spin valves. With its chemical stability, high resistivity and small induced dam**, this AuW alloy may find applications in the nearest future. △ Less

Submitted 22 August, 2014; v1 submitted 27 March, 2014; originally announced March 2014.

Journal ref: Applied Physics Letters 104, 142403 (2014)

Spin Pum** and Inverse Spin Hall Effect in Platinum: The Essential Role of Spin-Memory Loss at Metallic Interfaces

Authors: J. -C. Rojas-Sánchez, N. Reyren, P. Laczkowski, W. Savero, J. -P. Attané, C. Deranlot, M. Jamet, J. -M. George, L. Vila, H. Jaffrès

Abstract: Through combined ferromagnetic resonance, spin-pum** and inverse spin Hall effect experiments in Co|Pt bilayers and Co|Cu|Pt trilayers, we demonstrate consistent values of spin diffusion length $\ell_{\rm sf}^{\rm Pt}=3.4\pm0.4$ nm and of spin Hall angle $θ_{\rm SHE}^{\rm Pt}=0.051\pm0.004$ for Pt. Our data and model emphasize on the partial depolarization of the spin current at each interface d… ▽ More Through combined ferromagnetic resonance, spin-pum** and inverse spin Hall effect experiments in Co|Pt bilayers and Co|Cu|Pt trilayers, we demonstrate consistent values of spin diffusion length $\ell_{\rm sf}^{\rm Pt}=3.4\pm0.4$ nm and of spin Hall angle $θ_{\rm SHE}^{\rm Pt}=0.051\pm0.004$ for Pt. Our data and model emphasize on the partial depolarization of the spin current at each interface due to spin-memory loss. Our model reconciles the previously published spin Hall angle values and explains the different scaling lengths for the ferromagnetic dam** and the spin Hall effect induced voltage. △ Less

Submitted 17 March, 2014; v1 submitted 10 December, 2013; originally announced December 2013.

Comments: 6 pages, 3 figures (main text) and 8 pages supplementary. Published with small modifications in Phys. Rev. Lett

Journal ref: Physical Review Letters 112, 106602 (2014)

Spin Pum** and Inverse Spin Hall Effect in Germanium

Authors: J. -C. Rojas-Sánchez, M. Cubukcu, A. Jain, C. Vergnaud, C. Portemont, C. Ducruet, A. Barski, A. Marty, L. Vila, J. -P. Attané, E. Augendre, G. Desfonds, S. Gambarelli, H. Jaffrès, J. -M. George, M. Jamet

Abstract: We have measured the inverse spin Hall effect (ISHE) in \textit{n}-Ge at room temperature. The spin current in germanium was generated by spin pum** from a CoFeB/MgO magnetic tunnel junction in order to prevent the impedance mismatch issue. A clear electromotive force was measured in Ge at the ferromagnetic resonance of CoFeB. The same study was then carried out on several test samples, in parti… ▽ More We have measured the inverse spin Hall effect (ISHE) in \textit{n}-Ge at room temperature. The spin current in germanium was generated by spin pum** from a CoFeB/MgO magnetic tunnel junction in order to prevent the impedance mismatch issue. A clear electromotive force was measured in Ge at the ferromagnetic resonance of CoFeB. The same study was then carried out on several test samples, in particular we have investigated the influence of the MgO tunnel barrier and sample annealing on the ISHE signal. First, the reference CoFeB/MgO bilayer grown on SiO$_{2}$ exhibits a clear electromotive force due to anisotropic magnetoresistance and anomalous Hall effect which is dominated by an asymmetric contribution with respect to the resonance field. We also found that the MgO tunnel barrier is essential to observe ISHE in Ge and that sample annealing systematically lead to an increase of the signal. We propose a theoretical model based on the presence of localized states at the interface between the MgO tunnel barrier and Ge to account for these observations. Finally, all of our results are fully consistent with the observation of ISHE in heavily doped $n$-Ge and we could estimate the spin Hall angle at room temperature to be $\approx$0.001. △ Less

Submitted 12 May, 2013; originally announced May 2013.

Comments: 34 pages, 14 figures

Electrical and thermal spin accumulation in germanium

Authors: A. Jain, C. Vergnaud, J. Peiro, J. C. Le Breton, E. Prestat, L. Louahadj, C. Portemont, C. Ducruet, V. Baltz, A. Marty, A. Barski, P. Bayle-Guillemaud, L. Vila, J. -P. Attané, E. Augendre, H. Jaffrès, J. -M. George, M. Jamet

Abstract: In this letter, we first show electrical spin injection in the germanium conduction band at room temperature and modulate the spin signal by applying a gate voltage to the channel. The corresponding signal modulation agrees well with the predictions of spin diffusion models. Then by setting a temperature gradient between germanium and the ferromagnet, we create a thermal spin accumulation in germa… ▽ More In this letter, we first show electrical spin injection in the germanium conduction band at room temperature and modulate the spin signal by applying a gate voltage to the channel. The corresponding signal modulation agrees well with the predictions of spin diffusion models. Then by setting a temperature gradient between germanium and the ferromagnet, we create a thermal spin accumulation in germanium without any tunnel charge current. We show that temperature gradients yield larger spin accumulations than pure electrical spin injection but, due to competing microscopic effects, the thermal spin accumulation in germanium remains surprisingly almost unchanged under the application of a gate voltage to the channel. △ Less

Submitted 19 April, 2012; originally announced April 2012.

Comments: 7 pages, 3 figures

Crossover from spin accumulation into interface states to spin injection in the germanium conduction band

Authors: A. Jain, J. -C. Rojas-Sanchez, M. Cubukcu, J. Peiro, J. C. Le Breton, E. Prestat, C. Vergnaud, L. Louahadj, C. Portemont, C. Ducruet, V. Baltz, A. Barski, P. Bayle-Guillemaud, L. Vila, J. -P. Attané, E. Augendre, G. Desfonds, S. Gambarelli, H. Jaffrès, J. -M. George, M. Jamet

Abstract: Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this letter, we demonstrate a clear transition from spin accumulation into interface states… ▽ More Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this letter, we demonstrate a clear transition from spin accumulation into interface states to spin injection in the conduction band of $n$-Ge. We observe spin signal amplification at low temperature due to spin accumulation into interface states followed by a clear transition towards spin injection in the conduction band from 200 K up to room temperature. In this regime, the spin signal is reduced down to a value compatible with spin diffusion model. More interestingly, we demonstrate in this regime a significant modulation of the spin signal by spin pum** generated by ferromagnetic resonance and also by applying a back-gate voltage which are clear manifestations of spin current and accumulation in the germanium conduction band. △ Less

Submitted 5 January, 2013; v1 submitted 29 March, 2012; originally announced March 2012.

Comments: 5 pages, 4 figures

Journal ref: Physical Review Letters 109, 106603 (2012)

Ordering intermetallic alloys by ion irradiation: a way to tailor magnetic media

Authors: H. Bernas, D. Halley, K. -H. Heinig, J. -Ph. Attane, D. Ravelosona, A. Marty, P. Auric, C. Chappert, Y. Samson

Abstract: Combining He ion irradiation and thermal mobility below 600K, we both trigger and control the transformation from chemical disorder to order in thin films of an intermetallic ferromagnet (FePd). Kinetic Monte Carlo simulations show how the initial directional short range order determines order propagation. Magnetic ordering perpendicular to the film plane was achieved, promoting the initially we… ▽ More Combining He ion irradiation and thermal mobility below 600K, we both trigger and control the transformation from chemical disorder to order in thin films of an intermetallic ferromagnet (FePd). Kinetic Monte Carlo simulations show how the initial directional short range order determines order propagation. Magnetic ordering perpendicular to the film plane was achieved, promoting the initially weak magnetic anisotropy to the highest values known for FePd films. This post-growth treatment should find applications in ultrahigh density magnetic recording. △ Less

Submitted 26 September, 2002; originally announced September 2002.

Comments: 7 pages, 3 Figures