Condensed Matter > Materials Science
[Submitted on 29 Mar 2012 (v1), last revised 5 Jan 2013 (this version, v2)]
Title:Crossover from spin accumulation into interface states to spin injection in the germanium conduction band
View PDFAbstract:Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this letter, we demonstrate a clear transition from spin accumulation into interface states to spin injection in the conduction band of $n$-Ge. We observe spin signal amplification at low temperature due to spin accumulation into interface states followed by a clear transition towards spin injection in the conduction band from 200 K up to room temperature. In this regime, the spin signal is reduced down to a value compatible with spin diffusion model. More interestingly, we demonstrate in this regime a significant modulation of the spin signal by spin pum** generated by ferromagnetic resonance and also by applying a back-gate voltage which are clear manifestations of spin current and accumulation in the germanium conduction band.
Submission history
From: Matthieu Jamet [view email][v1] Thu, 29 Mar 2012 11:39:58 UTC (666 KB)
[v2] Sat, 5 Jan 2013 20:09:12 UTC (683 KB)
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