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Lattice deformation at the sub-micron scale: X-ray nanobeam measurements of elastic strain in electron shuttling devices
Authors:
C. Corley-Wiciak,
M. H. Zoellner,
I. Zaitsev,
K. Anand,
E. Zatterin,
Y. Yamamoto,
A. A. Corley-Wiciak,
F. Reichmann,
W. Langheinrich,
L. R. Schreiber,
C. L. Manganelli,
M. Virgilio,
C. Richter,
G. Capellini
Abstract:
The lattice strain induced by metallic electrodes can impair the functionality of advanced quantum devices operating with electron or hole spins. Here we investigate the deformation induced by CMOS-manufactured titanium nitride electrodes on the lattice of a buried, 10 nm-thick Si/SiGe Quantum Well by means of nanobeam Scanning X-ray Diffraction Microscopy. We were able to measure TiN electrode-in…
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The lattice strain induced by metallic electrodes can impair the functionality of advanced quantum devices operating with electron or hole spins. Here we investigate the deformation induced by CMOS-manufactured titanium nitride electrodes on the lattice of a buried, 10 nm-thick Si/SiGe Quantum Well by means of nanobeam Scanning X-ray Diffraction Microscopy. We were able to measure TiN electrode-induced local modulations of the strain tensor components in the range of $2 - 8 \times 10^{-4}$ with ~60 nm lateral resolution. We have evaluated that these strain fluctuations are reflected into local modulations of the potential of the conduction band minimum larger than 2 meV, which is close to the orbital energy of an electrostatic quantum dot. We observe that the sign of the strain modulations at a given depth of the quantum well layer depends on the lateral dimensions of the electrodes. Since our work explores the impact of device geometry on the strain-induced energy landscape, it enables further optimization of the design of scaled CMOS-processed quantum devices.
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Submitted 18 April, 2023;
originally announced April 2023.
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Quantum spin Hall phase in GeSn heterostructures on silicon
Authors:
B. M. Ferrari,
F. Marcantonio,
F. Murphy-Armando,
M. Virgilio,
F. Pezzoli
Abstract:
Quantum phases of solid-state electron systems look poised to sustain exotic phenomena and a very rich spin physics. We propose a practical silicon-based architecture that spontaneously sustains topological properties, while being fully compatible with the high-volume manufacturing capabilities of modern microelectronic foundries. Here we show how Ge1-xSnx alloys, an emerging group IV semiconducto…
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Quantum phases of solid-state electron systems look poised to sustain exotic phenomena and a very rich spin physics. We propose a practical silicon-based architecture that spontaneously sustains topological properties, while being fully compatible with the high-volume manufacturing capabilities of modern microelectronic foundries. Here we show how Ge1-xSnx alloys, an emerging group IV semiconductor, can be engineered into junctions that demonstrate a broken gap alignment. We predict such basic building block undergo a quantum phase transition that can elegantly accommodate the existence of gate-controlled chiral edge states directly on Si. This will enable tantalizing prospects for designing integrated circuits hosting quantum spin hall insulators and advanced topological functionalities.
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Submitted 6 October, 2022;
originally announced October 2022.
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A high-mobility hole bilayer in a germanium double quantum well
Authors:
A. Tosato,
B. M. Ferrari,
A. Sammak,
A. R. Hamilton,
M. Veldhorst,
M. Virgilio,
G. Scappucci
Abstract:
We design, fabricate, and study a hole bilayer in a strained germanium double quantum well. Magnetotransport characterisation of double quantum well field-effect transistors as a function of gate voltage reveals the population of two hole channels with a high combined mobility of 3.34$\times$10$^5$ cm$^2$/Vs and a low percolation density of 2.38$\times$10$^{10}$ cm$^{-2}$. We resolve the individua…
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We design, fabricate, and study a hole bilayer in a strained germanium double quantum well. Magnetotransport characterisation of double quantum well field-effect transistors as a function of gate voltage reveals the population of two hole channels with a high combined mobility of 3.34$\times$10$^5$ cm$^2$/Vs and a low percolation density of 2.38$\times$10$^{10}$ cm$^{-2}$. We resolve the individual population of the channels from the interference patterns of the Landau fan diagram. At a density of 2.0$\times$10$^{11}$ cm$^{-2}$ the system is in resonance and we observe an anti-crossing of the first two bilayer subbands characterized by a symmetric-antisymmetric gap of $\sim$0.69 meV, in agreement with Schrödinger-Poisson simulations.
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Submitted 18 January, 2022;
originally announced January 2022.
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Second harmonic generation in germanium quantum wells for nonlinear silicon photonics
Authors:
Jacopo Frigerio,
Chiara Ciano,
Joel Kuttruff,
Andrea Mancini,
Andrea Ballabio,
Daniel Chrastina,
Virginia Falcone,
Monica De Seta,
Leonetta Baldassarre,
Jonas Allerbeck,
Daniele Brida,
Lunjie Zeng,
Eva Olsson,
Michele Virgilio,
Michele Ortolani
Abstract:
Second-harmonic generation (SHG) is a direct measure of the strength of second-order nonlinear optical effects, which also include frequency mixing and parametric oscillations. Natural and artificial materials with broken center-of-inversion symmetry in their unit cell display high SHG efficiency, however the silicon-foundry compatible group-IV semiconductors (Si, Ge) are centrosymmetric, thereby…
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Second-harmonic generation (SHG) is a direct measure of the strength of second-order nonlinear optical effects, which also include frequency mixing and parametric oscillations. Natural and artificial materials with broken center-of-inversion symmetry in their unit cell display high SHG efficiency, however the silicon-foundry compatible group-IV semiconductors (Si, Ge) are centrosymmetric, thereby preventing full integration of second-order nonlinearity in silicon photonics platforms. Here we demonstrate strong SHG in Ge-rich quantum wells grown on Si wafers. The symmetry breaking is artificially realized with a pair of asymmetric coupled quantum wells (ACQW), in which three of the quantum-confined states are equidistant in energy, resulting in a double resonance for SHG. Laser spectroscopy experiments demonstrate a giant second-order nonlinearity at mid-infrared pump wavelengths between 9 and 12 microns. Leveraging on the strong intersubband dipoles, the nonlinear susceptibility almost reaches 10^5 pm/V
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Submitted 23 March, 2021;
originally announced March 2021.
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THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures
Authors:
David Stark,
Muhammad Mirza,
Luca Persichetti,
Michele Montanari,
Sergej Markmann,
Mattias Beck,
Thomas Grange,
Stefan Birner,
Michele Virgilio,
Chiara Ciano,
Michele Ortolani,
Cedric Corley,
Giovanni Capellini,
Luciana Di Gaspare,
Monica De Seta,
Douglas J. Paul,
Jérôme Faist,
Giacomo Scalari
Abstract:
We report electroluminescence originating from L-valley transitions in n-type Ge/Si$_{0.15}$Ge$_{0.85}$ quantum cascade structures centered at 3.4 and 4.9 THz with a line broadening of $Δf/f \approx 0.2$. Three strain-compensated heterostructures, grown on a Si substrate by ultrahigh vacuum chemical vapor deposition, have been investigated. The design is based on a single quantum well active regio…
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We report electroluminescence originating from L-valley transitions in n-type Ge/Si$_{0.15}$Ge$_{0.85}$ quantum cascade structures centered at 3.4 and 4.9 THz with a line broadening of $Δf/f \approx 0.2$. Three strain-compensated heterostructures, grown on a Si substrate by ultrahigh vacuum chemical vapor deposition, have been investigated. The design is based on a single quantum well active region employing a vertical optical transition and the observed spectral features are well described by non-equilibrium Green's function calculations. The presence of two peaks highlights a suboptimal injection in the upper state of the radiative transition. Comparison of the electroluminescence spectra with similar GaAs/AlGaAs structure yields one order of magnitude lower emission efficiency.
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Submitted 14 January, 2021;
originally announced January 2021.
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Electron-hole superfluidity in strained Si/Ge type II heterojunctions
Authors:
Sara Conti,
Samira Saberi Pouya,
Andrea Perali,
Michele Virgilio,
Francois M. Peeters,
Alexander R. Hamilton,
Giordano Scappucci,
David Neilson
Abstract:
Excitons are promising candidates for generating superfluidity and Bose-Einstein Condensation (BEC) in solid state devices, but an enabling material platform with in-built bandstructure advantages and scaling compatibility with industrial semiconductor technology is lacking. Here we predict that spatially indirect excitons in a lattice-matched strained Si/Ge bilayer embedded into a germanium-rich…
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Excitons are promising candidates for generating superfluidity and Bose-Einstein Condensation (BEC) in solid state devices, but an enabling material platform with in-built bandstructure advantages and scaling compatibility with industrial semiconductor technology is lacking. Here we predict that spatially indirect excitons in a lattice-matched strained Si/Ge bilayer embedded into a germanium-rich SiGe crystal, would lead to observable mass-imbalanced electron-hole superfluidity and BEC. Holes would be confined in a compressively strained Ge quantum well and electrons in a lattice-matched tensile strained Si quantum well. We envision a device architecture that does not require an insulating barrier at the Si/Ge interface, since this interface offers a type II band alignment. Thus the electrons and holes can be kept very close but strictly separate, strengthening the electron-hole pairing attraction while preventing fast electron-hole recombination. The band alignment also allows a one-step procedure for making independent contacts to the electron and hole layers, overcoming a significant obstacle to device fabrication. We predict superfluidity at experimentally accessible temperatures of a few Kelvin and carrier densities up to $\sim 6\times 10^{10}$ cm$^{-2}$, while the large imbalance of the electron and hole effective masses can lead to exotic superfluid phases.
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Submitted 14 December, 2020; v1 submitted 10 December, 2020;
originally announced December 2020.
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Intersubband transition engineering in the conduction band of asymmetric coupled Ge/SiGe quantum wells
Authors:
Luca Persichetti,
Michele Montanari,
Chiara Ciano,
Luciana Di Gaspare,
Michele Ortolani,
Leonetta Baldassarre,
Marvin H. Zoellner,
Samik Mukherjee,
Oussama Moutanabbir,
Giovanni Capellini,
Michele Virgilio,
Monica De Seta
Abstract:
: n-type Ge/SiGe asymmetric-coupled quantum wells represent the building block of a variety of nanoscale quantum devices, including recently proposed designs for a silicon-based THz quantum cascade laser. In this paper, we combine structural and spectroscopic experiments on 20-module superstructures, each featuring two Ge wells coupled through a Ge-rich tunnel barrier, as a function of the geometr…
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: n-type Ge/SiGe asymmetric-coupled quantum wells represent the building block of a variety of nanoscale quantum devices, including recently proposed designs for a silicon-based THz quantum cascade laser. In this paper, we combine structural and spectroscopic experiments on 20-module superstructures, each featuring two Ge wells coupled through a Ge-rich tunnel barrier, as a function of the geometry parameters of the design and the P dopant concentration. Through the comparison of THz spectroscopic data with numerical calculations of intersubband optical absorption resonances, we demonstrated that it is possible to tune by design the energy and the spatial overlap of quantum confined subbands in the conduction band of the heterostructures. The high structural/interface quality of the samples and the control achieved on subband hybridization are the promising starting point towards a working electrically pumped light-emitting device.
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Submitted 12 February, 2020;
originally announced February 2020.
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Atomic-scale insights into semiconductor heterostructures: from experimental three-dimensional analysis of the interface to a generalized theory of interface roughness scattering
Authors:
T. Grange,
S. Mukherjee,
G. Capellini,
M. Montanari,
L. Persichetti,
L. Di Gaspare,
S. Birner,
A. Attiaoui,
O. Moutanabbir,
M. Virgilio,
M. De Seta
Abstract:
We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploiting our experimental insights into the three-dimensional atomic landscape obtained on Ge/GeSi heterointerfaces obtained by atom probe tomography, we have been able to define the full set of interface parameters relevant…
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We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploiting our experimental insights into the three-dimensional atomic landscape obtained on Ge/GeSi heterointerfaces obtained by atom probe tomography, we have been able to define the full set of interface parameters relevant to the scattering potential, including both the in-plane and axial correlation inside real diffuse interfaces. Our experimental findings indicate a partial coherence of the interface roughness along the growth direction within the interfaces. We show that it is necessary to include this feature, previously neglected by theoretical models, when heterointerfaces characterized by finite interface widths are taken into consideration.
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Submitted 24 April, 2020; v1 submitted 3 February, 2020;
originally announced February 2020.
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Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions
Authors:
T. Grange,
D. Stark,
G. Scalari,
J. Faist,
L. Persichetti,
L. Di Gaspare,
M. De Seta,
M. Ortolani,
D. J. Paul,
G. Capellini,
S. Birner,
M. Virgilio
Abstract:
n-type Ge/SiGe terahertz quantum cascade laser are investigated using non-equilibrium Green's functions calculations. We compare the temperature dependence of the terahertz gain properties with an equivalent GaAs/AlGaAs QCL design. In the Ge/SiGe case, the gain is found to be much more robust to temperature increase, enabling operation up to room temperature. The better temperature robustness with…
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n-type Ge/SiGe terahertz quantum cascade laser are investigated using non-equilibrium Green's functions calculations. We compare the temperature dependence of the terahertz gain properties with an equivalent GaAs/AlGaAs QCL design. In the Ge/SiGe case, the gain is found to be much more robust to temperature increase, enabling operation up to room temperature. The better temperature robustness with respect to III-V is attributed to the much weaker interaction with optical phonons. The effect of lower interface quality is investigated and can be partly overcome by engineering smoother quantum confinement via multiple barrier heights.
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Submitted 30 November, 2018;
originally announced November 2018.
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Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells
Authors:
M. Montanari,
M. Virgilio,
C. L. Manganelli,
P. Zaumseil,
M. H. Zoellner,
Y. Hou,
M. A. Schubert,
L. Persichetti,
L. Di Gaspare,
M. De Seta,
E. Vitiello,
E. Bonera,
F. Pezzoli,
G. Capellini
Abstract:
In this paper we investigate the structural and optical properties of few strain-unbalanced multiple Ge/GeSi quantum wells pseudomorphically grown on GeSi reverse-graded substrates. The obtained high epitaxial quality demonstrates that strain symmetrization is not a mandatory requirement for few quantum-well repetitions. Photoluminescence data, supported by a thorough theoretical modeling, allow u…
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In this paper we investigate the structural and optical properties of few strain-unbalanced multiple Ge/GeSi quantum wells pseudomorphically grown on GeSi reverse-graded substrates. The obtained high epitaxial quality demonstrates that strain symmetrization is not a mandatory requirement for few quantum-well repetitions. Photoluminescence data, supported by a thorough theoretical modeling, allow us to unambiguously disentangle the spectral features of the quantum wells from those originating in the virtual substrate and to evaluate the impact on the optical properties of key parameters, such as quantum confinement, layer compositions, excess carrier density, and lattice strain. This detailed understanding of the radiative recombination processes is of paramount importance for the development of Ge/GeSi-based optical devices.
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Submitted 21 November, 2018;
originally announced November 2018.
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Low disordered, stable, and shallow germanium quantum wells: a playground for spin and hybrid quantum technology
Authors:
A. Sammak,
D. Sabbagh,
N. W. Hendrickx,
M. Lodari,
B. Paquelet Wuetz,
L. Yeoh,
M. Bollani,
M. Virgilio,
M. A. Schubert,
P. Zaumseil,
G. Capellini,
M. Veldhorst,
G. Scappucci
Abstract:
Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface, however nearby surface states degrade the electrical properties of the starting material. In this paper we demonstrate a two-dimensional hole gas of high mobility ($5\times 10^{5}$ cm…
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Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface, however nearby surface states degrade the electrical properties of the starting material. In this paper we demonstrate a two-dimensional hole gas of high mobility ($5\times 10^{5}$ cm$^2$/Vs) in a very shallow strained germanium channel, which is located only 22 nm below the surface. This high mobility leads to mean free paths $\approx6 μm$, setting new benchmarks for holes in shallow FET devices. Carriers are confined in an undoped Ge/SiGe heterostructure with reduced background contamination, sharp interfaces, and high uniformity. The top-gate of a dopant-less field effect transistor controls the carrier density in the channel. The high mobility, along with a percolation density of $1.2\times 10^{11}\text{ cm}^{-2}$, light effective mass (0.09 m$_e$), and high g-factor (up to $7$) highlight the potential of undoped Ge/SiGe as a low-disorder material platform for hybrid quantum technologies.
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Submitted 7 September, 2018;
originally announced September 2018.
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Gate-controlled quantum dots and superconductivity in planar germanium
Authors:
N. W. Hendrickx,
D. P. Franke,
A. Sammak,
M. Kouwenhoven,
D. Sabbagh,
L. Yeoh,
R. Li,
M. L. V. Tagliaferri,
M. Virgilio,
G. Capellini,
G. Scappucci,
M. Veldhorst
Abstract:
Superconductors and semiconductors are crucial platforms in the field of quantum computing. They can be combined to hybrids, bringing together physical properties that enable the discovery of new emergent phenomena and provide novel strategies for quantum control. The involved semiconductor materials, however, suffer from disorder, hyperfine interactions or lack of planar technology. Here we reali…
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Superconductors and semiconductors are crucial platforms in the field of quantum computing. They can be combined to hybrids, bringing together physical properties that enable the discovery of new emergent phenomena and provide novel strategies for quantum control. The involved semiconductor materials, however, suffer from disorder, hyperfine interactions or lack of planar technology. Here we realise an approach that overcomes these issues altogether and integrate gate-defined quantum dots and superconductivity into a material system with strong spin-orbit coupling. In our germanium heterostructures, heavy holes with mobilities exceeding 500,000 cm$^2$/Vs are confined in shallow quantum wells that are directly contacted by annealed aluminium leads. We demonstrate gate-tunable superconductivity and find a characteristic voltage $I_cR_n$ that exceeds 10 $μ$V. Germanium therefore has great promise for fast and coherent quantum hardware and, being compatible with standard manufacturing, could become a leading material in the quantum revolution.
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Submitted 26 January, 2018;
originally announced January 2018.
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Final Service Provider DevOps concept and evaluation
Authors:
Guido Marchetto,
Riccardo Sisto,
Wolfgang John,
Pontus Sköldström,
Bertrand Pechenot,
Felicián Németh,
István Pelle,
Juhoon Kim,
Xuejun Cai,
Chunyan Fu,
Catalin Meirosu,
Kostas Pentikousis,
Sachin Sharma,
Ioanna Papafili,
Serena Spinoso,
Matteo Virgilio,
Rebecca Steinert,
Per Kreuger,
Shaoteng Liu,
Jan Ekman,
Antonio Manzalini,
Apoorv Shukla
Abstract:
This report presents the results of the UNIFY Service Provider DevOps activities. First, we present the final definition and assessment of the concept. SP-DevOps is realized by a combination of various functional components facilitating integrated service verification, efficient and programmable observability, and automated troubleshooting processes. Our assessment shows that SP-DevOps can help pr…
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This report presents the results of the UNIFY Service Provider DevOps activities. First, we present the final definition and assessment of the concept. SP-DevOps is realized by a combination of various functional components facilitating integrated service verification, efficient and programmable observability, and automated troubleshooting processes. Our assessment shows that SP-DevOps can help providers to reach a medium level of DevOps maturity and allows significant reduction in OPEX. Second, we focus on the evaluation of the proposed SP-DevOps components. The set of tools proposed supports ops and devs across all stages, with a focus on the deployment, operation and debugging phases, and allows to activate automated processes for operating NFV environments. Finally, we present use-cases and our demonstrators for selected process implementions, which allowed the functional validation of SP-DevOps.
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Submitted 25 October, 2016; v1 submitted 7 October, 2016;
originally announced October 2016.
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Tunability and Losses of Mid-infrared Plasmonics in Heavily Doped Germanium Thin Films
Authors:
Jacopo Frigerio,
Andrea Ballabio,
Giovanni Isella,
Emilie Sakat,
Paolo Biagioni,
Monica Bollani,
Enrico Napolitani,
Costanza Manganelli,
Michele Virgilio,
Alexander Grupp,
Marco P. Fischer,
Daniele Brida,
Kevin Gallacher,
Douglas J. Paul,
Leonetta Baldassarre,
Paolo Calvani,
Valeria Giliberti,
Alessandro Nucara,
Michele Ortolani
Abstract:
Heavily-doped semiconductor films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate heavily n-type doped germanium epilayers grown on different substrates, in-situ doped in the $10^{17}$ to $10^{19}$ cm$^{-3}$ range, by infrared spectroscopy, f…
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Heavily-doped semiconductor films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate heavily n-type doped germanium epilayers grown on different substrates, in-situ doped in the $10^{17}$ to $10^{19}$ cm$^{-3}$ range, by infrared spectroscopy, first principle calculations, pump-probe spectroscopy and dc transport measurements to determine the relation between plasma edge and carrier density and to quantify mid-infrared plasmon losses. We demonstrate that the unscreened plasma frequency can be tuned in the 400 - 4800 cm$^{-1}$ range and that the average electron scattering rate, dominated by scattering with optical phonons and charged impurities, increases almost linearly with frequency. We also found weak dependence of losses and tunability on the crystal defect density, on the inactivated dopant density and on the temperature down to 10 K. In films where the plasma was optically activated by pum** in the near-infrared, we found weak but significant dependence of relaxation times on the static do** level of the film. Our results suggest that plasmon decay times in the several-picosecond range can be obtained in n-type germanium thin films grown on silicon substrates hence allowing for underdamped mid-infrared plasma oscillations at room temperature.
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Submitted 20 January, 2016;
originally announced January 2016.
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Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates
Authors:
E. Vitiello,
M. Virgilio,
A. Giorgioni,
J. Frigerio,
E. Gatti,
S. De Cesari,
E. Bonera,
E. Grilli,
G. Isella,
F. Pezzoli
Abstract:
The circular polarization of direct gap emission of Ge is studied in optically-excited tensile-strained Ge-on-Si heterostructures as a function of do** and temperature. Owing to the spin-dependent optical selection rules, the radiative recombinations involving strain-split light (cG-LH) and heavy hole (cG-HH) bands are unambiguously resolved. The fundamental cG-LH transition is found to have a l…
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The circular polarization of direct gap emission of Ge is studied in optically-excited tensile-strained Ge-on-Si heterostructures as a function of do** and temperature. Owing to the spin-dependent optical selection rules, the radiative recombinations involving strain-split light (cG-LH) and heavy hole (cG-HH) bands are unambiguously resolved. The fundamental cG-LH transition is found to have a low temperature circular polarization degree of about 85% despite an off-resonance excitation of more than 300 meV. By photoluminescence (PL) measurements and tight binding calculations we show that this exceptionally high value is due to the peculiar energy dependence of the optically-induced electron spin population. Finally, our observation of the direct gap doublet clarifies that the light hole contribution, previously considered to be negligible, can dominate the room temperature PL even at low tensile strain values of about 0.2%.
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Submitted 29 October, 2015;
originally announced October 2015.
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Dynamical systems and computable information
Authors:
V. Benci,
C. Bonanno,
S. Galatolo,
G. Menconi,
M. Virgilio
Abstract:
We present some new results which relate information to chaotic dynamics. In our approach the quantity of information is measured by the Algorithmic Information Content (Kolmogorov complexity) or by a sort of computable version of it (Computable Information Content) in which the information is measured by the use of a suitable universal data compression algorithm. We apply these notions to the s…
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We present some new results which relate information to chaotic dynamics. In our approach the quantity of information is measured by the Algorithmic Information Content (Kolmogorov complexity) or by a sort of computable version of it (Computable Information Content) in which the information is measured by the use of a suitable universal data compression algorithm. We apply these notions to the study of dynamical systems by considering the asymptotic behavior of the quantity of information necessary to describe their orbits. When a system is ergodic, this method provides an indicator which equals the Kolmogorov-Sinai entropy almost everywhere. Moreover, if the entropy is 0, our method gives new indicators which measure the unpredictability of the system and allows to classify various kind of weak chaos. Actually this is the main motivation of this work. The behaviour of a zero entropy dynamical system is far to be completely predictable exept that in particular cases. In fact there are 0 entropy systems which exibit a sort of {\it weak chaos} where the information necessary to describe the orbit behavior increases with time more than logarithmically (periodic case) even if less than linearly (positive entropy case). Also, we believe that the above method is useful for the classification of zero entropy time series. To support this point of view, we show some theoretical and experimenthal results in specific cases.
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Submitted 29 October, 2002;
originally announced October 2002.
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Entropic Analysis of non-Stationary Sequences
Authors:
M. Virgilio,
P. Grigolini
Abstract:
The aim of this paper is to shed light on the analysis of non-stationary time series by means of the method of diffusion entropy. For this purpose, we first study the case when infinitely many time series, as different realizations of the same dynamic process, are available, so as to adopt the Gibbs ensemble perspective. We solve the problem of establishing under which conditions scaling emerges…
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The aim of this paper is to shed light on the analysis of non-stationary time series by means of the method of diffusion entropy. For this purpose, we first study the case when infinitely many time series, as different realizations of the same dynamic process, are available, so as to adopt the Gibbs ensemble perspective. We solve the problem of establishing under which conditions scaling emerges from within this perspective. Then, we study the more challenging problem of creating a diffusion process from only one single (non-stationary) time series. The conversion of this single sequence into many diffusional trajectories is equivalent to creating a non-Gibbsian ensemble. However, adopting a probabilistic approach to evaluate the contribution of any system of this non-Gibbsian ensemble, and using for it the theoretical Gibbsian prescription of the earlier case, we find a recipe that fits accurately the numerical results. With the help of this recipe we show that nonstationary time series produce either anomalous scaling with ordinary statistics or ordinary scaling with anomalous statistics. From this recipe we also derive an attractive way to explain the entropy time evolution, as resulting from two distinct uncertainty sources, the lack of information on the trajectory initial condition, and the lack of control on random trajectories.
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Submitted 12 April, 2002; v1 submitted 10 April, 2002;
originally announced April 2002.
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Compression and diffusion: a joint approach to detect complexity
Authors:
P. Allegrini,
V. Benci,
P. Grigolini,
P. Hamilton,
M. Ignaccolo,
G. Menconi,
L. Palatella,
G. Raffaelli,
N. Scafetta,
M. Virgilio,
J. Jang
Abstract:
The adoption of the Kolmogorov-Sinai (KS) entropy is becoming a popular research tool among physicists, especially when applied to a dynamical system fitting the conditions of validity of the Pesin theorem. The study of time series that are a manifestation of system dynamics whose rules are either unknown or too complex for a mathematical treatment, is still a challenge since the KS entropy is n…
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The adoption of the Kolmogorov-Sinai (KS) entropy is becoming a popular research tool among physicists, especially when applied to a dynamical system fitting the conditions of validity of the Pesin theorem. The study of time series that are a manifestation of system dynamics whose rules are either unknown or too complex for a mathematical treatment, is still a challenge since the KS entropy is not computable, in general, in that case. Here we present a plan of action based on the joint action of two procedures, both related to the KS entropy, but compatible with computer implementation through fast and efficient programs. The former procedure, called Compression Algorithm Sensitive To Regularity (CASToRe), establishes the amount of order by the numerical evaluation of algorithmic compressibility. The latter, called Complex Analysis of Sequences via Scaling AND Randomness Assessment (CASSANDRA), establishes the complexity degree through the numerical evaluation of the strength of an anomalous effect. This is the departure, of the diffusion process generated by the observed fluctuations, from ordinary Brownian motion. The CASSANDRA algorithm shares with CASToRe a connection with the Kolmogorov complexity. This makes both algorithms especially suitable to study the transition from dynamics to thermodynamics, and the case of non-stationary time series as well. The benefit of the joint action of these two methods is proven by the analysis of artificial sequences with the same main properties as the real time series to which the joint use of these two methods will be applied in future research work.
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Submitted 7 February, 2002;
originally announced February 2002.
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Facing Non-Stationary Conditions with a New Indicator of Entropy Increase: The Cassandra Algorithm
Authors:
P. Allegrini,
P. Grigolini,
P. Hamilton,
L. Palatella,
G. Raffaelli,
M. Virgilio
Abstract:
We address the problem of detecting non-stationary effects in time series (in particular fractal time series) by means of the Diffusion Entropy Method (DEM). This means that the experimental sequence under study, of size $N$, is explored with a window of size $L << N$. The DEM makes a wise use of the statistical information available and, consequently, in spite of the modest size of the window u…
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We address the problem of detecting non-stationary effects in time series (in particular fractal time series) by means of the Diffusion Entropy Method (DEM). This means that the experimental sequence under study, of size $N$, is explored with a window of size $L << N$. The DEM makes a wise use of the statistical information available and, consequently, in spite of the modest size of the window used, does succeed in revealing local statistical properties, and it shows how they change upon moving the windows along the experimental sequence. The method is expected to work also to predict catastrophic events before their occurrence.
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Submitted 13 November, 2001;
originally announced November 2001.
