Condensed Matter > Mesoscale and Nanoscale Physics
[Submitted on 10 Dec 2020 (v1), last revised 14 Dec 2020 (this version, v3)]
Title:Electron-hole superfluidity in strained Si/Ge type II heterojunctions
View PDFAbstract:Excitons are promising candidates for generating superfluidity and Bose-Einstein Condensation (BEC) in solid state devices, but an enabling material platform with in-built bandstructure advantages and scaling compatibility with industrial semiconductor technology is lacking. Here we predict that spatially indirect excitons in a lattice-matched strained Si/Ge bilayer embedded into a germanium-rich SiGe crystal, would lead to observable mass-imbalanced electron-hole superfluidity and BEC. Holes would be confined in a compressively strained Ge quantum well and electrons in a lattice-matched tensile strained Si quantum well. We envision a device architecture that does not require an insulating barrier at the Si/Ge interface, since this interface offers a type II band alignment. Thus the electrons and holes can be kept very close but strictly separate, strengthening the electron-hole pairing attraction while preventing fast electron-hole recombination. The band alignment also allows a one-step procedure for making independent contacts to the electron and hole layers, overcoming a significant obstacle to device fabrication. We predict superfluidity at experimentally accessible temperatures of a few Kelvin and carrier densities up to $\sim 6\times 10^{10}$ cm$^{-2}$, while the large imbalance of the electron and hole effective masses can lead to exotic superfluid phases.
Submission history
From: Sara Conti [view email][v1] Thu, 10 Dec 2020 12:30:08 UTC (1,598 KB)
[v2] Fri, 11 Dec 2020 13:16:01 UTC (1,598 KB)
[v3] Mon, 14 Dec 2020 11:38:10 UTC (1,598 KB)
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