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NO2 adsorption on GaN surface and its interaction with the yellow-luminescence-associated surface state
Authors:
Yury Turkulets,
Nitzan Shauloff,
Or Haim Chaulker,
Raz Jelinek,
Ilan Shalish
Abstract:
Trap** of charge at surface states is a longstanding problem in GaN that hinders a full realization of its potential as a semiconductor for microelectronics. At least part of this charge originates in molecules adsorbed on the GaN surface. Multiple studies have addressed the adsorption of different substances, but the role of adsorbents in the charge-trap** mechanism remains unclear. Here, we…
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Trap** of charge at surface states is a longstanding problem in GaN that hinders a full realization of its potential as a semiconductor for microelectronics. At least part of this charge originates in molecules adsorbed on the GaN surface. Multiple studies have addressed the adsorption of different substances, but the role of adsorbents in the charge-trap** mechanism remains unclear. Here, we show that the GaN surface selectively adsorbs nitrogen dioxide (NO2) existing in the air in trace amounts. NO2 appears to charge the yellow-luminescence-related surface state. Mild heat treatment in vacuum removes this surface charge, only to be re-absorbed on re-exposure to air. Selective exposure of vacuum-annealed GaN to NO2 reproduces a similar surface charge distribution, as does the exposure to air. Residual gas analysis of the gases desorbed during heat treatment in vacuum shows a large concentration of nitric oxide (NO) released from the surface. These observations suggest that NO2 is selectively adsorbed from the air, deleteriously affecting the electrical properties of air-exposed GaN. The trap** of free electrons as part of the NO2chemisorption process changes the surface charge density, resulting in a change in the surface band bending. Uncontrollable by nature, NO2 adsorption may significantly affect any GaN-based electronic device. However, as shown here, a rather mild heat treatment in vacuum restores the surface state occupancy of GaN to its intrinsic state. If attempted before passivation, this heat treatment may provide a possible solution to longstanding stability problems associated with surface charge trap** in GaN-based devices.
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Submitted 10 May, 2024;
originally announced May 2024.
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Is the Mg-related GaN blue luminescence deep-level an MgO surface state?
Authors:
Or Haim Chaulker,
Yury Turkulets,
Ilan Shalish
Abstract:
Mg is currently the only p-type dopant in technological use in GaN. Its incorporation into the GaN lattice is difficult. It requires a thermal treatment that only partially activates the Mg. To achieve moderate p-type do** requires high doses of Mg that mostly remain inactive. High p-type do** is thus typically achieved at the cost of certain lattice distortion and the creation of defects. Usi…
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Mg is currently the only p-type dopant in technological use in GaN. Its incorporation into the GaN lattice is difficult. It requires a thermal treatment that only partially activates the Mg. To achieve moderate p-type do** requires high doses of Mg that mostly remain inactive. High p-type do** is thus typically achieved at the cost of certain lattice distortion and the creation of defects. Using low-temperature surface photovoltage spectroscopy, we obtain a wide spectrum of optical transitions within the bandgap of Mg-doped GaN. The results reveal an optical transition from the valence band into a deep trap around 0.49 eV above the valence band, along with what appears to be a complimentary transition from the same trap into the conduction band observed at 2.84 eV (coinciding with the energy of the famous Mg-related GaN blue luminescence). The similar shape of the spectra, their complimentary energies within the GaN gap and their opposite nature (hole vs. electron trap) appear to be more than a coincidence suggesting that this is an Mg-related surface state. The density of charge we calculate for this surface state is about 2x1012 cm-2. We suggest that these small amounts of surface-segregated Mg partially oxidize during the growth and further oxidize during the consecutive Mg-activation heat treatment. This minute quantity of oxidized surface Mg should be about enough to form an Mg-related surface state. Etching the GaN with H3PO4 is shown to affect the photovoltage at the blue-luminescence-related energy. Finally, we show that pure MgO powder produces the same blue luminescence even at the absolute absence of GaN.
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Submitted 2 October, 2023; v1 submitted 29 September, 2023;
originally announced September 2023.
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Homologous self-assembled superlattices: What causes their periodic polarity switching? Review, model, and experimental test
Authors:
Varun Thakur,
Dor Benafsha,
Yury Turkulets,
Almog R. Azulay,
Xin Liang,
Rachel S. Goldman,
Ilan Shalish
Abstract:
Quantum semiconductor structures are commonly achieved by bandgap engineering that relies on the ability to switch from one semiconductor to another during their growth. Growth of a superlattice is typically demanding technologically. In contrast, accumulated evidence points to a tendency among a certain class of multiple-cation binary oxides to self-assemble spontaneously as superlattice structur…
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Quantum semiconductor structures are commonly achieved by bandgap engineering that relies on the ability to switch from one semiconductor to another during their growth. Growth of a superlattice is typically demanding technologically. In contrast, accumulated evidence points to a tendency among a certain class of multiple-cation binary oxides to self-assemble spontaneously as superlattice structures. This class has been dubbed the homologous superlattices. For a famous example, when a mixture of indium and zinc is oxidized, the phases of In-O and ZnO separate in an orderly periodic manner, along the ZnO polar axis, with polarity inversion taking place between consecutive ZnO sections. As we review here, the same structure has been observed when the indium was replaced with other metals, and perhaps even in ZnO alone. This peculiar self-assembled structure has been attracting research over the past decade. The purpose of this study is to gain understanding of the physics underlying the formation of this unique structure. Here, we first provide an extensive review of the accumulated literature on these spontaneously-formed structures and then propose an explanation for the long-standing mystery of this intriguing self-assembly in the form of an electrostatic growth phenomenon and test the proposed model on experimental data.
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Submitted 28 August, 2022;
originally announced August 2022.
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The GaN yellow-luminescence-related surface state and its interaction with air
Authors:
Yury Turkulets,
Nitzan Shauloff,
Or Haim Chaulker,
Yoram Shapira,
Raz Jelinek,
Ilan Shalish
Abstract:
Yellow luminescence (YL) is probably the longest and most studied defect-related luminescence band in GaN, yet its electronic structure or chemical identity remain unclear. Most of the theoretical work so far has attributed the feature to bulk defects, whereas spectroscopic studies have suggested a surface origin. Here, we apply deep level spectroscopy using sub-bandgap surface photovoltage that p…
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Yellow luminescence (YL) is probably the longest and most studied defect-related luminescence band in GaN, yet its electronic structure or chemical identity remain unclear. Most of the theoretical work so far has attributed the feature to bulk defects, whereas spectroscopic studies have suggested a surface origin. Here, we apply deep level spectroscopy using sub-bandgap surface photovoltage that provides the energy distribution of the surface charge density. Comparison of surface charge spectra obtained under identical conditions before and after various surface treatments reveals the dynamics of the surface charge density. Further comparison with spectra of the entire state obtained using photoluminescence shows how the charge density stored in YL-related defects is eliminated upon a mild anneal in vacuum. This suggests that the YL-related defect involves a certain molecule adsorbed on the GaN surface, possibly in a complex with an intrinsic surface defect. The observed interaction with air strongly indicates that the YL-related deep level is a surface state.
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Submitted 26 August, 2022; v1 submitted 18 August, 2022;
originally announced August 2022.
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Surface properties of semiconductors from post-illumination photovoltage transient
Authors:
Yury Turkulets,
Ilan Shalish
Abstract:
Free surfaces of semiconductors respond to light by varying their surface voltage (surface band bending). This surface photovoltage may be easily detected using a Kelvin probe. Modeling the transient temporal behavior of the surface photovoltage after the light is turned off may serve as a means to characterize several key electronic properties of the semiconductor, which are of fundamental import…
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Free surfaces of semiconductors respond to light by varying their surface voltage (surface band bending). This surface photovoltage may be easily detected using a Kelvin probe. Modeling the transient temporal behavior of the surface photovoltage after the light is turned off may serve as a means to characterize several key electronic properties of the semiconductor, which are of fundamental importance in numerous electronic device applications, such as transistors and solar cells. In this paper, we develop a model for this temporal behavior and use it to characterize layers and nanowires of several semiconductors. Our results suggest that what has previously been considered to be a logarithmic decay is only approximately so. Due to the known limited frequency bandwidth of the Kelvin probe method, most previous Kelvin-probe-based methods have been limited to slow responding semiconductors. The model we propose extends this range of applicability.
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Submitted 8 June, 2020; v1 submitted 4 June, 2020;
originally announced June 2020.
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Surface states in AlGaN/GaN high electron mobility transistors: Quantitative profiles and dynamics of the surface Fermi level
Authors:
Yury Turkulets,
Ilan Shalish
Abstract:
We present a method to obtain quantitative profiles of surface state charge density and monitor its dynamics under various stress conditions in high electron mobility transistor (HEMT) devices. The method employs an optical spectroscopy of the channel current at various bias conditions. We test the method on a classical AlGaN/GaN HEMT structure. To analyze the results, we propose a model, accordin…
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We present a method to obtain quantitative profiles of surface state charge density and monitor its dynamics under various stress conditions in high electron mobility transistor (HEMT) devices. The method employs an optical spectroscopy of the channel current at various bias conditions. We test the method on a classical AlGaN/GaN HEMT structure. To analyze the results, we propose a model, according to which the energy distribution of the surface charge density may be obtained from the derivative of the channel photocurrent. The proposed method is applied to fully fabricated transistors and can be measured under any device bias combination. This way, it is possible to explore the effect of device operating conditions on the surface state charge. This feature should be especially useful in studies of the various surface charge migration effects in nitride HEMTs. An important byproduct of the method is a quantitative assessment of the energy position of the surface Fermi level and its dynamics under various bias conditions.
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Submitted 19 April, 2019; v1 submitted 18 April, 2019;
originally announced April 2019.
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Polar charge induced self-assembly: An electric effect that causes non-isotropic nanorod growth in wurtzite semiconductors
Authors:
Yury Turkulets,
Ilan Shalish
Abstract:
Crystals grow by gathering and bonding of atoms to form an ordered structure. Typically, the growth is equally probable in all crystalline directions, but sometimes, it is not, as is the case of nanowire growth. Nanowire growth is explained, in most cases, by the presence of liquid metal droplets that mediate between an incoming flux of atoms and a substrate or an existing crystal nucleus, while d…
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Crystals grow by gathering and bonding of atoms to form an ordered structure. Typically, the growth is equally probable in all crystalline directions, but sometimes, it is not, as is the case of nanowire growth. Nanowire growth is explained, in most cases, by the presence of liquid metal droplets that mediate between an incoming flux of atoms and a substrate or an existing crystal nucleus, while defining the lateral dimension. Here, we report and explain a previously unknown mode of non-isotropic crystal growth observed in two wurtzite semiconductors, InN and ZnO. Being of polar structure, wurtzite crystals possess a built-in internal electric field. Thermally-excitied charges screen the built-in electric field during growth in a non-uniform, yet symmetric, manner, causing the formation of symmetric domains of inverted polarity. These domains limit the lateral expansion of the crystal, inducing a fiber growth mode. The mechanism described here elucidates previously unexplained phenomena in the growth of group III-nitrides on sapphire, emphasizing the need to consider the effects of built-in electric fields in the growth of polar semiconductors.
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Submitted 25 November, 2018; v1 submitted 14 September, 2018;
originally announced September 2018.
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Why do nanowires grow with their c-axis vertically-aligned in the absence of epitaxy?
Authors:
Almog R. Azulay,
Yury Turkulets,
Davide Del Gaudio,
Rachel S. Goldman,
Ilan Shalish
Abstract:
Images of uniform and upright nanowires are fascinating, but often, they are quite puzzling, when epitaxial templating from the substrate is clearly absent. Here, we reveal the physics underlying one such hidden growth guidance mechanism through a specific example - the case of ZnO nanowires grown on silicon oxide and glass. We show how electric fields exerted by the insulating substrate may be ma…
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Images of uniform and upright nanowires are fascinating, but often, they are quite puzzling, when epitaxial templating from the substrate is clearly absent. Here, we reveal the physics underlying one such hidden growth guidance mechanism through a specific example - the case of ZnO nanowires grown on silicon oxide and glass. We show how electric fields exerted by the insulating substrate may be manipulated through the surface charge to define the orientation and polarity of the nanowires. Surface charge is ubiquitous on the surfaces of semiconductors and insulators, and as a result, substrate electric fields need always be considered. Our results suggest a new concept, according to which the growth of wurtzite semiconductors may often be described as a process of electric-charge-induced self assembly, wherein the internal built-in field in the polar material tends to align in parallel to an external field exerted by the substrate to minimize the interfacial energy of the system.
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Submitted 4 November, 2019; v1 submitted 6 September, 2018;
originally announced September 2018.
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Mobility and sheet charge in high electron mobility transistor quantum wells from photon-induced transconductance
Authors:
Yury Turkulets,
Ilan Shalish
Abstract:
When a high electron mobility transistor is illuminated, the absorbed photons excite electron-hole pairs. The generated pairs are separated by the built in field in such a way that the electrons end up in the quantum well generating a photocurrent, while together with the holes that are swept towards the gate they generate a surface photovoltage. Here, we define photon-induced transconductance as…
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When a high electron mobility transistor is illuminated, the absorbed photons excite electron-hole pairs. The generated pairs are separated by the built in field in such a way that the electrons end up in the quantum well generating a photocurrent, while together with the holes that are swept towards the gate they generate a surface photovoltage. Here, we define photon-induced transconductance as the ratio between the surface photovoltage and the 2DEG photocurrent under identical illumination conditions. We show that this ratio directly yields the channel mobility and the 2DEG sheet charge density. The photocurrent and photovoltage may vary with the wavelength of the exciting photons. We examine and analyze optical spectra of this photon-induced transconductance obtained from an AlGaN/GaN heterostructure for a range of photon energies showing that the mobility is obtained only for excitation at photon energies above the wide bandgap energy. The method offers an optical alternative to Hall effect and to field effect mobility. Unlike Hall effect, it may be measured in the transistor itself. The only alternative that can measure mobility in the transistor itself measures field effect mobility, while the proposed method mesures the same conductivity mobility as measured by Hall effect.
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Submitted 5 September, 2018; v1 submitted 2 September, 2018;
originally announced September 2018.
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Franz-Keldysh effect in semiconductor built-in fields
Authors:
Yury Turkulets,
Ilan Shalish
Abstract:
Franz-Keldysh effect is expressed in the smearing of the absorption edge in semiconductors under high electric fields. While Franz and Keldysh considered a limited case of externally applied uniform electric field, the same effect may be caused by built-in electric fields at semiconductor surfaces and interfaces. While in the first case, the bands are bent linearly, in the latter case, they are be…
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Franz-Keldysh effect is expressed in the smearing of the absorption edge in semiconductors under high electric fields. While Franz and Keldysh considered a limited case of externally applied uniform electric field, the same effect may be caused by built-in electric fields at semiconductor surfaces and interfaces. While in the first case, the bands are bent linearly, in the latter case, they are bent parabolically. This non-linear band bending poses an additional complexity that has not been considered previously. Here, we extend the linear model to treat the case of a non-linear band bending. We then show how this model may be used to quantitatively analyze photocurrent and photovoltage spectra to determine the built-in fields, the density of surface state charge, and the do** concentration of the material. We use the model on a GaN\AlGaN heterostructure, and GaAs bulk. The results demonstrate that the same mechanism underlies the band-edge response both in photocurrent and photovoltage spectra and demonstrate the quantitative use of the model in contactless extraction of important semiconductor material parameters.
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Submitted 22 April, 2018; v1 submitted 27 March, 2018;
originally announced March 2018.
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Contactless method to measure 2DEG charge density and band structure in high electron mobility transistor structures
Authors:
Yury Turkulets,
Ilan Shalish
Abstract:
We present a contactless method that is capable of characterizing a high electron mobility transistor heterostructure at the wafer stage, right after its growth, before any production process has been attempted, to provide the equilibrium band structure and the density of charge of the 2-dimensional electron gas in the quantum well. The method can thus evaluate critical transistor parameters and h…
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We present a contactless method that is capable of characterizing a high electron mobility transistor heterostructure at the wafer stage, right after its growth, before any production process has been attempted, to provide the equilibrium band structure and the density of charge of the 2-dimensional electron gas in the quantum well. The method can thus evaluate critical transistor parameters and help to screen out low performance wafers before the actual fabrication. To this end, we use a simple optical spectroscopy at room temperature that measures the surface photovoltage band-edge responses in the heterostructure and uses a model that takes into account the effect of the built-in electric fields on optical absorption in the layers and heterojunctions to evaluate bandgaps, band offsets, and built-in fields. The quantum well charge is then calculated from the built-in fields. The main advantage of the method is in its capability to provide information on all the different layers in the typical heterostructure simultaneously in a single measurement. The method is not limited to the high electron mobility transistor structure but may be used on any other heterostructure. It opens the door for a new type of characterization methods suitable for the post-silicon multi-layer multi-semiconductor heterostructure device era.
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Submitted 19 February, 2018; v1 submitted 15 January, 2018;
originally announced January 2018.
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Probing dynamic behavior of electric fields and band diagrams in complex semiconductor heterostructures
Authors:
Yury Turkulets,
Ilan Shalish
Abstract:
Modern bandgap engineered electronic devices are typically made of multi-semiconductor multi-layer heterostructures that pose a major challenge to silicon-era characterization methods. As a result, contemporary bandgap engineering relies mostly on simulated band structures that are hardly ever verified experimentally. Here, we present a method that experimentally evaluates bandgap, band offsets, a…
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Modern bandgap engineered electronic devices are typically made of multi-semiconductor multi-layer heterostructures that pose a major challenge to silicon-era characterization methods. As a result, contemporary bandgap engineering relies mostly on simulated band structures that are hardly ever verified experimentally. Here, we present a method that experimentally evaluates bandgap, band offsets, and electric fields, in complex multi-semiconductor layered structures and it does so simultaneously in all the layers. The method uses a modest optical photocurrent spectroscopy setup at ambient conditions. The results are analyzed using a simple model for electro-absorption. As an example, we apply the method to a typical GaN high electron mobility transistor structure. Measurements under various external electric fields allow us to experimentally construct band diagrams, not only at equilibrium, but also under any other working conditions of the device. The electric fields are then used to obtain the charge carrier density and mobility in the quantum well as a function of the gate voltage over the entire range of operating conditions of the device. The principles exemplified here may serve as guidelines for the development of methods for simultaneous characterization of all the layers in complex, multi-semiconductor structures.
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Submitted 12 November, 2017; v1 submitted 17 October, 2017;
originally announced October 2017.
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Surface effect that causes a peak in band-edge photocurrent spectra: a quantitative model
Authors:
Yury Turkulets,
Tamar Bick,
Ilan Shalish
Abstract:
Band edge photocurrent spectra are typically observed in either of two shapes: a peak or a step. In this study, we show that the photocurrent band edge response of a GaN layer forms a peak, while the same response in GaN nanowires takes the form of a step, both are red-shifted to the actual band edge energy. Although this apparent inconsistency is not limited to GaN, the physics of this phenomenon…
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Band edge photocurrent spectra are typically observed in either of two shapes: a peak or a step. In this study, we show that the photocurrent band edge response of a GaN layer forms a peak, while the same response in GaN nanowires takes the form of a step, both are red-shifted to the actual band edge energy. Although this apparent inconsistency is not limited to GaN, the physics of this phenomenon has been unclear. To understand the physics behind these observations, we propose a model explaining the apparent discrepancy as resulting from a structure-dependent surface-effect. To test the model, we experiment with a GaAs layer showing that we can deliberately switch between a step and a peak. We demonstrate that using this quantitative model one may obtain the exact band edge transition energy, regardless of the red-shift variance, as well as the density of the surface state charges that cause the red shift. The model thus adds quantitative features to photocurrent spectroscopy.
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Submitted 6 June, 2016;
originally announced June 2016.
