Condensed Matter > Materials Science
[Submitted on 6 Sep 2018 (v1), last revised 4 Nov 2019 (this version, v5)]
Title:Why do nanowires grow with their c-axis vertically-aligned in the absence of epitaxy?
View PDFAbstract:Images of uniform and upright nanowires are fascinating, but often, they are quite puzzling, when epitaxial templating from the substrate is clearly absent. Here, we reveal the physics underlying one such hidden growth guidance mechanism through a specific example - the case of ZnO nanowires grown on silicon oxide and glass. We show how electric fields exerted by the insulating substrate may be manipulated through the surface charge to define the orientation and polarity of the nanowires. Surface charge is ubiquitous on the surfaces of semiconductors and insulators, and as a result, substrate electric fields need always be considered. Our results suggest a new concept, according to which the growth of wurtzite semiconductors may often be described as a process of electric-charge-induced self assembly, wherein the internal built-in field in the polar material tends to align in parallel to an external field exerted by the substrate to minimize the interfacial energy of the system.
Submission history
From: Ilan Shalish [view email][v1] Thu, 6 Sep 2018 06:04:53 UTC (538 KB)
[v2] Fri, 7 Sep 2018 07:18:50 UTC (1,195 KB)
[v3] Wed, 12 Sep 2018 19:13:35 UTC (892 KB)
[v4] Sun, 23 Sep 2018 11:52:07 UTC (1,139 KB)
[v5] Mon, 4 Nov 2019 07:06:32 UTC (1,572 KB)
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