Showing 1–32 of 32 results for author: Savchenko, A K

Electrochemical do** of graphene

Authors: A. A. Kaverzin, S. M. Strawbridge, A. S. Price, F. Withers, A. K. Savchenko, D. W. Horsell

Abstract: The electrical properties of graphene are known to be modified by chemical species that interact with it. We investigate the effect of do** of graphene-based devices by toluene (C6H5CH3). We show that this effect has a complicated character. Toluene is seen to act as a donor, transferring electrons to the graphene. However, the degree of do** is seen to depend on the magnitude and polarity of… ▽ More The electrical properties of graphene are known to be modified by chemical species that interact with it. We investigate the effect of do** of graphene-based devices by toluene (C6H5CH3). We show that this effect has a complicated character. Toluene is seen to act as a donor, transferring electrons to the graphene. However, the degree of do** is seen to depend on the magnitude and polarity of an electric field applied between the graphene and a nearby electrode. This can be understood in terms of an electrochemical reaction mediated by the graphene crystal. △ Less

Submitted 22 October, 2010; originally announced October 2010.

Comments: 15 pages, 7 figures

Millikelvin de Haas-van Alphen and Magnetotransport studies of Graphite

Authors: S. B. Hubbard, T. J. Kershaw, A. Usher, A. K. Savchenko, A. Shytov

Abstract: Recent studies of the electronic properties of graphite have produced conflicting results regarding the positions of the different carrier types within the Brillouin zone, and the possible presence of Dirac fermions. In this paper we report a comprehensive study of the de Haas-van Alphen, Shubnikov-de Haas and Hall effects in a sample of highly orientated pyrolytic graphite, at temperatures in the… ▽ More Recent studies of the electronic properties of graphite have produced conflicting results regarding the positions of the different carrier types within the Brillouin zone, and the possible presence of Dirac fermions. In this paper we report a comprehensive study of the de Haas-van Alphen, Shubnikov-de Haas and Hall effects in a sample of highly orientated pyrolytic graphite, at temperatures in the range 30 mK to 4 K and magnetic fields up to 12 T. The transport measurements confirm the Brillouin-zone locations of the different carrier types assigned by Schroeder et al.: electrons are at the K-point, and holes are near the H-points. We extract the cyclotron mass and scattering time for both carrier types from the temperature- and magnetic-field-dependences of the magneto-oscillations. Our results indicate that the holes experience stronger scattering and hence have a lower mobility than the electrons. We utilise phase-frequency analysis and intercept analysis of the 1/B positions of magneto-oscillation extrema to identify the nature of the carriers in graphite, whether they are Dirac or normal (Schrodinger) fermions. These analyses indicate normal holes and electrons of indeterminate nature. △ Less

Submitted 15 July, 2010; originally announced July 2010.

Electron properties of fluorinated single-layer graphene transistors

Authors: Freddie Withers, Marc Dubois, Alexander K. Savchenko

Abstract: We have fabricated transistor structures using fluorinated single-layer graphene flakes and studied their electronic properties at different temperatures. Compared with pristine graphene, fluorinated graphene has very large and strongly temperature dependent resistance in the electro-neutrality region. We show that fluorination creates a mobility gap in graphene's spectrum where electron transport… ▽ More We have fabricated transistor structures using fluorinated single-layer graphene flakes and studied their electronic properties at different temperatures. Compared with pristine graphene, fluorinated graphene has very large and strongly temperature dependent resistance in the electro-neutrality region. We show that fluorination creates a mobility gap in graphene's spectrum where electron transport takes place via localised electron states. △ Less

Submitted 6 September, 2010; v1 submitted 19 May, 2010; originally announced May 2010.

Journal ref: Phys. Rev. B 82, 073403 (2010)

Electron-electron interactions in the conductivity of graphene

Authors: A. A. Kozikov, A. K. Savchenko, B. N. Narozhny, A. V. Shytov

Abstract: The effect of electron-electron interaction on the low-temperature conductivity of graphene is investigated experimentally. Unlike in other two-dimensional systems, the electron-electron interaction correction in graphene is sensitive to the details of disorder. A new temperature regime of the interaction correction is observed where quantum interference is suppressed by intra-valley scattering. W… ▽ More The effect of electron-electron interaction on the low-temperature conductivity of graphene is investigated experimentally. Unlike in other two-dimensional systems, the electron-electron interaction correction in graphene is sensitive to the details of disorder. A new temperature regime of the interaction correction is observed where quantum interference is suppressed by intra-valley scattering. We determine the value of the interaction parameter, F_0 ~ -0.1, and show that its small value is due to the chiral nature of interacting electrons. △ Less

Submitted 26 May, 2010; v1 submitted 3 April, 2010; originally announced April 2010.

Comments: 4 pages, 4 figures, 1 table

Strong nonlinear optical response of graphene flakes measured by four-wave mixing

Authors: E. Hendry, P. J. Hale, J. J. Moger, A. K. Savchenko, S. A. Mikhailov

Abstract: We present the first experimental investigation of nonlinear optical properties of graphene flakes. We find that at near infrared frequencies a graphene monolayer exhibits a remarkably high third-order optical nonlinearity which is practically independent of the wavelengths of incident light. The nonlinear optical response can be utilized for imaging purposes, with image contrasts of graphene wh… ▽ More We present the first experimental investigation of nonlinear optical properties of graphene flakes. We find that at near infrared frequencies a graphene monolayer exhibits a remarkably high third-order optical nonlinearity which is practically independent of the wavelengths of incident light. The nonlinear optical response can be utilized for imaging purposes, with image contrasts of graphene which are orders of magnitude higher than those obtained using linear microscopy. △ Less

Submitted 29 December, 2009; originally announced December 2009.

Comments: 4 pages, 5 figures

Journal ref: Phys. Rev. Lett. 105, 097401 (2010)

Mesoscopic Fluctuations of Coulomb Drag of Composite Fermions

Authors: A. S. Price, A. K. Savchenko, D. A. Ritchie

Abstract: We present the first experimental study of mesoscopic fluctuations of Coulomb drag in a system with two layers of composite fermions, which are seen when either the magnetic field or carrier concentration are varied. These fluctuations cause an alternating sign of the average drag. We study these fluctuations at different temperatures to establish the dominant dephasing mechanism of composite fe… ▽ More We present the first experimental study of mesoscopic fluctuations of Coulomb drag in a system with two layers of composite fermions, which are seen when either the magnetic field or carrier concentration are varied. These fluctuations cause an alternating sign of the average drag. We study these fluctuations at different temperatures to establish the dominant dephasing mechanism of composite fermions. △ Less

Submitted 24 December, 2009; originally announced December 2009.

Comments: 4 pages, 4 figures

Transition between electron localisation and antilocalisation in graphene

Authors: F. V. Tikhonenko, A. A. Kozikov, A. K. Savchenko, R. V. Gorbachev

Abstract: The wave nature of electrons in low-dimensional structures manifests itself in conventional electrical measurements as a quantum correction to the classical conductance. This correction comes from the interference of scattered electrons which results in electron localisation and therefore a decrease of the conductance. In graphene, where the charge carriers are chiral and have an additional (Ber… ▽ More The wave nature of electrons in low-dimensional structures manifests itself in conventional electrical measurements as a quantum correction to the classical conductance. This correction comes from the interference of scattered electrons which results in electron localisation and therefore a decrease of the conductance. In graphene, where the charge carriers are chiral and have an additional (Berry) phase of π, the quantum interference is expected to lead to anti-localisation: an increase of the conductance accompanied by negative magnetoconductance (a decrease of conductance in magnetic field). Here we observe such negative magnetoconductance which is a direct consequence of the chirality of electrons in graphene. We show that graphene is a unique two-dimensional material in that, depending on experimental conditions, it can demonstrate both localisation and anti-localisation effects. We also show that quantum interference in graphene can survive at unusually high temperatures, up to T~200 K. △ Less

Submitted 25 March, 2009; originally announced March 2009.

Mesoscopic conductance fluctuations in graphene

Authors: D. W. Horsell, A. K. Savchenko, F. V. Tikhonenko, K. Kechedzhi, I. V. Lerner, V. I. Fal'ko

Abstract: We study fluctuations of the conductance of micron-sized graphene devices as a function of the Fermi energy and magnetic field. The fluctuations are studied in combination with analysis of weak localization which is determined by the same scattering mechanisms. It is shown that the variance of conductance fluctuations depends not only on inelastic scattering that controls dephasing but also on e… ▽ More We study fluctuations of the conductance of micron-sized graphene devices as a function of the Fermi energy and magnetic field. The fluctuations are studied in combination with analysis of weak localization which is determined by the same scattering mechanisms. It is shown that the variance of conductance fluctuations depends not only on inelastic scattering that controls dephasing but also on elastic scattering. In particular, contrary to its effect on weak localization, strong intervalley scattering suppresses conductance fluctuations in graphene. The correlation energy, however, is independent of the details of elastic scattering and can be used to determine the electron temperature of graphene structures. △ Less

Submitted 5 February, 2009; originally announced February 2009.

Comments: 6 pages, 6 figures. Submitted to the proceedings of Graphene Week 2008 (Trieste, Italy)

Quantum transport thermometry for electrons in graphene

Authors: K. Kechedzhi, D. W. Horsell, F. V. Tikhonenko, A. K. Savchenko, R. V. Gorbachev, I. V. Lerner, V. I. Fal'ko

Abstract: We propose a method of measuring the electron temperature $T_e$ in mesoscopic conductors and demonstrate experimentally its applicability to micron-size graphene devices in the linear-response regime ($T_e\approx T$, the bath temperature). The method can be {especially useful} in case of overheating, $T_e>T$. It is based on analysis of the correlation function of mesoscopic conductance fluctuati… ▽ More We propose a method of measuring the electron temperature $T_e$ in mesoscopic conductors and demonstrate experimentally its applicability to micron-size graphene devices in the linear-response regime ($T_e\approx T$, the bath temperature). The method can be {especially useful} in case of overheating, $T_e>T$. It is based on analysis of the correlation function of mesoscopic conductance fluctuations. Although the fluctuation amplitude strongly depends on the details of electron scattering in graphene, we show that $T_e$ extracted from the correlation function is insensitive to these details. △ Less

Submitted 15 January, 2009; v1 submitted 23 August, 2008; originally announced August 2008.

Comments: 4 pages, 4 figures; final version, as published

Journal ref: Phys. Rev. Lett. 102, 066801 (2009)

Conductance of p-n-p graphene structures with 'air-bridge' top gates

Authors: R. V. Gorbachev, A. S. Mayorov, A. K. Savchenko, D. W. Horsell, F. Guinea

Abstract: We have fabricated graphene devices with a top gate separated from the graphene layer by an air gap--a design which does not decrease the mobility of charge carriers under the gate. This gate is used to realise p-n-p structures where the conducting properties of chiral carriers are studied. The band profile of the structures is calculated taking into account the specifics of the graphene density… ▽ More We have fabricated graphene devices with a top gate separated from the graphene layer by an air gap--a design which does not decrease the mobility of charge carriers under the gate. This gate is used to realise p-n-p structures where the conducting properties of chiral carriers are studied. The band profile of the structures is calculated taking into account the specifics of the graphene density of states and is used to find the resistance of the p-n junctions expected for chiral carriers. We show that ballistic p-n junctions have larger resistance than diffusive ones. This is caused by suppressed transmission of chiral carriers at angles away from the normal to the junction. △ Less

Submitted 4 June, 2008; v1 submitted 13 April, 2008; originally announced April 2008.

Comments: to be published in Nano Letters

Journal ref: Nano Lett. 8, 1995 (2008)

Quantum interference in bilayer graphene

Authors: R. V. Gorbachev, F. V. Tikhonenko, A. S. Mayorov, D. W. Horsell, A. K. Savchenko

Abstract: We report the first experimental study of the quantum interference correction to the conductivity of bilayer graphene. Low-field, positive magnetoconductivity due to the weak localisation effect is investigated at different carrier densities, including those around the electroneutrality region. Unlike conventional 2D systems, weak localisation in bilayer graphene is affected by elastic scatterin… ▽ More We report the first experimental study of the quantum interference correction to the conductivity of bilayer graphene. Low-field, positive magnetoconductivity due to the weak localisation effect is investigated at different carrier densities, including those around the electroneutrality region. Unlike conventional 2D systems, weak localisation in bilayer graphene is affected by elastic scattering processes such as intervalley scattering. Analysis of the dephasing determined from the magnetoconductivity is complemented by a study of the field- and density-dependent fluctuations of the conductance. Good agreement in the value of the coherence length is found between these two studies. △ Less

Submitted 13 August, 2007; originally announced August 2007.

Comments: Submitted to Physica E, Proceedings of EP2DS-17 (Genova, 2007)

Weak localisation in graphene flakes

Authors: F. V. Tikhonenko, D. W. Horsell, R. V. Gorbachev, A. K. Savchenko

Abstract: We show that the manifestation of quantum interference in graphene is very different from that in conventional two-dimensional systems. Due to the chiral nature of charge carriers, it is sensitive not only to inelastic, phase-breaking scattering, but also to a number of elastic scattering processes. We study weak localization in different samples and at different carrier densities, including the… ▽ More We show that the manifestation of quantum interference in graphene is very different from that in conventional two-dimensional systems. Due to the chiral nature of charge carriers, it is sensitive not only to inelastic, phase-breaking scattering, but also to a number of elastic scattering processes. We study weak localization in different samples and at different carrier densities, including the Dirac region, and find the characteristic rates that determine it. We show how the shape and quality of graphene flakes affect the values of the elastic and inelastic rates and discuss their physical origin. △ Less

Submitted 11 January, 2008; v1 submitted 1 July, 2007; originally announced July 2007.

Comments: Article and Supplementary material, Phys.Rev.Lett. (in print)

Journal ref: Phys. Rev. Lett. 100, 056802 (2008)

Giant Fluctuations of Coulomb Drag in a Bilayer System

Authors: A. S. Price, A. K. Savchenko, B. N. Narozhny, G. Allison, D. A. Ritchie

Abstract: We have observed reproducible fluctuations of the Coulomb drag, both as a function of magnetic field and electron concentration, which are a manifestation of quantum interference of electrons in the layers. At low temperatures the fluctuations exceed the average drag, giving rise to random changes of the sign of the drag. The fluctuations are found to be much larger than previously expected, and… ▽ More We have observed reproducible fluctuations of the Coulomb drag, both as a function of magnetic field and electron concentration, which are a manifestation of quantum interference of electrons in the layers. At low temperatures the fluctuations exceed the average drag, giving rise to random changes of the sign of the drag. The fluctuations are found to be much larger than previously expected, and we propose a model which explains their enhancement by considering fluctuations of local electron properties. △ Less

Submitted 10 April, 2007; originally announced April 2007.

Comments: 10 pages, 4 figures

Journal ref: Science, Vol.316, 99 (2007)

Weak localisation in bilayer graphene

Authors: R. V. Gorbachev, F. V. Tikhonenko, A. S. Mayorov, D. W. Horsell, A. K. Savchenko

Abstract: We have performed the first experimental investigation of quantum interference corrections to the conductivity of a bilayer graphene structure. A negative magnetoresistance - a signature of weak localisation - is observed at different carrier densities, including the electro-neutrality region. It is very different, however, from the weak localisation in conventional two-dimensional systems. We s… ▽ More We have performed the first experimental investigation of quantum interference corrections to the conductivity of a bilayer graphene structure. A negative magnetoresistance - a signature of weak localisation - is observed at different carrier densities, including the electro-neutrality region. It is very different, however, from the weak localisation in conventional two-dimensional systems. We show that it is controlled not only by the dephasing time, but also by different elastic processes that break the effective time-reversal symmetry and provide invervalley scattering. △ Less

Submitted 17 April, 2007; v1 submitted 27 January, 2007; originally announced January 2007.

Comments: 4 pages, 4 figures (to be published in PRL)

Journal ref: Phys. Rev. Lett. Vol. 98, 176805 (2007)

Thermodynamic density of states of two-dimensional GaAs systems near the apparent metal-insulator transition

Authors: G. D. Allison, E. A. Galaktionov, A. K. Savchenko, S. S. Safonov, M. M. Fogler, M. Y. Simmons, D. A. Ritchie

Abstract: We perform combined resistivity and compressibility studies of two-dimensional hole and electron systems which show the apparent metal-insulator transition - a crossover in the sign of dR/dT with changing density. No thermodynamic anomalies have been detected in the crossover region. Instead, despite a ten-fold difference in r_s, the compressibility of both electrons and holes is well described… ▽ More We perform combined resistivity and compressibility studies of two-dimensional hole and electron systems which show the apparent metal-insulator transition - a crossover in the sign of dR/dT with changing density. No thermodynamic anomalies have been detected in the crossover region. Instead, despite a ten-fold difference in r_s, the compressibility of both electrons and holes is well described by the theory of nonlinear screening of the random potential. We show that the resistivity exhibits a scaling behavior near the percolation threshold found from analysis of the compressibility. Notably, the percolation transition occurs at a much lower density than the crossover. △ Less

Submitted 22 March, 2006; originally announced March 2006.

Journal ref: Phys. Rev. Lett. 96, 216407 (2006)

Spontaneous current generation in gated nanostructures

Authors: D. W. Horsell, A. K. Savchenko, Y. M. Galperin, V. I. Kozub, V. M. Vinokur, D. A. Ritchie

Abstract: We have observed an unusual dc current spontaneously generated in the conducting channel of a short-gated GaAs transistor. The magnitude and direction of this current critically depend upon the voltage applied to the gate. We propose that it is initiated by the injection of hot electrons from the gate that relax via phonon emission. The phonons then excite secondary electrons from asymmetrically… ▽ More We have observed an unusual dc current spontaneously generated in the conducting channel of a short-gated GaAs transistor. The magnitude and direction of this current critically depend upon the voltage applied to the gate. We propose that it is initiated by the injection of hot electrons from the gate that relax via phonon emission. The phonons then excite secondary electrons from asymmetrically distributed impurities in the channel, which leads to the observed current. △ Less

Submitted 24 November, 2004; originally announced November 2004.

Shot Noise in Mesoscopic Transport Through Localised States

Authors: A. K. Savchenko, S. S. Safonov, S. H. Roshko, D. A. Bagrets, O. N. Jouravlev, Y. V. Nazarov, E. H. Linfield, D. A. Ritchie

Abstract: We show that shot noise can be used for studies of hop** and resonant tunnelling between localised electron states. In hop** via several states, shot noise is seen to be suppressed compared with its classical Poisson value $S_I=2eI$ ($I$ is the average current) and the suppression depends on the distribution of the barriers between the localised states. In resonant tunnelling through a singl… ▽ More We show that shot noise can be used for studies of hop** and resonant tunnelling between localised electron states. In hop** via several states, shot noise is seen to be suppressed compared with its classical Poisson value $S_I=2eI$ ($I$ is the average current) and the suppression depends on the distribution of the barriers between the localised states. In resonant tunnelling through a single impurity an enhancement of shot noise is observed. It has been established, both theoretically and experimentally, that a considerable increase of noise occurs due to Coulomb interaction between two resonant tunnelling channels. △ Less

Submitted 4 February, 2004; originally announced February 2004.

Comments: 7 pages, 5 figures; Proceedings of the 10th Conference on Hop** and Related Phenomena (Trieste 2003); requires Wiley style files (included)

Journal ref: phys. stat. sol. (b) 241, 26 (2004)

Interactions in high-mobility 2D electron and hole systems

Authors: E. A. Galaktionov, A. K. Savchenko, S. S. Safonov, Y. Y. Proskuryakov, L. Li, M. Pepper, M. Y. Simmons, D. A. Ritchie, E. H. Linfield, Z. D. Kvon

Abstract: Electron-electron interactions mediated by impurities are studied in several high-mobility two-dimensional (electron and hole) systems where the parameter $k_BTτ/\hbar $ changes from 0.1 to 10 ($τ$ is the momentum relaxation time). This range corresponds to the \textit{intermediate} and \textit {ballistic} regimes where only a few impurities are involved in electron-electron interactions. The in… ▽ More Electron-electron interactions mediated by impurities are studied in several high-mobility two-dimensional (electron and hole) systems where the parameter $k_BTτ/\hbar $ changes from 0.1 to 10 ($τ$ is the momentum relaxation time). This range corresponds to the \textit{intermediate} and \textit {ballistic} regimes where only a few impurities are involved in electron-electron interactions. The interaction correction to the Drude conductivity is detected in the temperature dependence of the resistance and in the magnetoresistance in parallel and perpendicular magnetic fields. The effects are analysed in terms of the recent theories of electron interactions developed for the ballistic regime. It is shown that the character of the fluctuation potential (short-range or long-range) is an important factor in the manifestation of electron-electron interactions in high-mobility 2D systems. △ Less

Submitted 4 February, 2004; originally announced February 2004.

Comments: 22 pages, 11 figures; to appear in proceedings of conference "Fundamental Problems of Mesoscopic Physics", Granada, Spain, 6-11 September, 2003

Enhanced shot noise in resonant tunnelling via interacting localised states

Authors: S. S. Safonov, A. K. Savchenko, D. A. Bagrets, O. N. Jouravlev, Y. V. Nazarov, E. H. Linfield, D. A. Ritchie

Abstract: In a variety of mesoscopic systems shot noise is seen to be suppressed in comparison with its Poisson value. In this work we observe a considerable enhancement of shot noise in the case of resonant tunnelling via localised states. We present a model of correlated transport through two localised states which provides both a qualitative and quantitative description of this effect. In a variety of mesoscopic systems shot noise is seen to be suppressed in comparison with its Poisson value. In this work we observe a considerable enhancement of shot noise in the case of resonant tunnelling via localised states. We present a model of correlated transport through two localised states which provides both a qualitative and quantitative description of this effect. △ Less

Submitted 3 March, 2003; originally announced March 2003.

Comments: 4 pages, 4 figures

Linear in-plane magnetoconductance and spin susceptibility of a 2D electron gas on a vicinal silicon surface

Authors: Y. Y. Proskuryakov, Z. D. Kvon, A. K. Savchenko

Abstract: In this work we have studied the parallel magnetoresistance of a 2DEG near a vicinal silicon surface. An unusual, linear magnetoconductance is observed in the fields up to $B = 15$ T, which we explain by the effect of spin olarization on impurity scattering. This linear magnetoresistance shows strong anomalies near the boundaries of the minigap in the electron spectrum of the vicinal system. In this work we have studied the parallel magnetoresistance of a 2DEG near a vicinal silicon surface. An unusual, linear magnetoconductance is observed in the fields up to $B = 15$ T, which we explain by the effect of spin olarization on impurity scattering. This linear magnetoresistance shows strong anomalies near the boundaries of the minigap in the electron spectrum of the vicinal system. △ Less

Submitted 23 September, 2003; v1 submitted 29 January, 2003; originally announced January 2003.

Comments: (accepted to Phys. Rev. B)

Anomalous state of a 2DEG in vicinal Si MOSFET in high magnetic fields

Authors: Z. D. Kvon, Y. Y. Proskuryakov, A. K. Savchenko

Abstract: We report the observation of an anomalous state of a 2D electron gas near a vicinal surface of a silicon MOSFET in high magnetic fields. It is characterised by unusual behaviour of the conductivities $σ_{xx}$ and $σ_{xy}$, which can be described as a collapse of the Zeeman spin splitting accompanied by a large peak in $σ_{xx}$ and an anomalous peak in $ σ_{xy}$. It occurs at densities correspond… ▽ More We report the observation of an anomalous state of a 2D electron gas near a vicinal surface of a silicon MOSFET in high magnetic fields. It is characterised by unusual behaviour of the conductivities $σ_{xx}$ and $σ_{xy}$, which can be described as a collapse of the Zeeman spin splitting accompanied by a large peak in $σ_{xx}$ and an anomalous peak in $ σ_{xy}$. It occurs at densities corresponding to the position of the Fermi level above the onset of the superlattice mini-gap inherent to the vicinal system. The range of fields and densities where this effect exists has been determined, and it has been shown that it is suppressed by parallel magnetic fields. △ Less

Submitted 14 January, 2003; originally announced January 2003.

Magnetoresistance of a 2D electron gas caused by electron interactions in the transition from the diffusive to the ballistic regime

Authors: L. Li, Y. Y. Proskuryakov, A. K. Savchenko, E. H. Linfield, D. A. Ritchie

Abstract: On a high-mobility 2D electron gas we have observed, in strong magnetic fields (omega_{c} tau > 1), a parabolic negative magnetoresistance caused by electron-electron interactions in the regime of k_{B} T tau / hbar ~ 1, which is the transition from the diffusive to the ballistic regime. From the temperature dependence of this magnetoresistance the interaction correction to the conductivity delt… ▽ More On a high-mobility 2D electron gas we have observed, in strong magnetic fields (omega_{c} tau > 1), a parabolic negative magnetoresistance caused by electron-electron interactions in the regime of k_{B} T tau / hbar ~ 1, which is the transition from the diffusive to the ballistic regime. From the temperature dependence of this magnetoresistance the interaction correction to the conductivity delta sigma_{xx}^{ee}(T) is obtained in the situation of a long-range fluctuation potential and strong magnetic field. The results are compared with predictions of the new theory of interaction-induced magnetoresistance. △ Less

Submitted 27 July, 2002; originally announced July 2002.

Hole-Hole Interaction Effect in the Conductance of the Two-Dimensional Hole Gas in the Ballistic Regime

Authors: Y. Y. Proskuryakov, A. K. Savchenko, S. S. Safonov, M. Pepper, M. Y. Simmons, D. A. Ritchie

Abstract: On a high mobility two-dimensional hole gas (2DHG) in a GaAs/GaAlAs heterostructure we study the interaction correction to the Drude conductivity in the ballistic regime, $k_BTτ/\hbar $ $>1$. It is shown that the 'metallic' behaviour of the resistivity ($dρ/dT>0$) of the low-density 2DHG is caused by hole-hole interaction effect in this regime. We find that the temperature dependence of the cond… ▽ More On a high mobility two-dimensional hole gas (2DHG) in a GaAs/GaAlAs heterostructure we study the interaction correction to the Drude conductivity in the ballistic regime, $k_BTτ/\hbar $ $>1$. It is shown that the 'metallic' behaviour of the resistivity ($dρ/dT>0$) of the low-density 2DHG is caused by hole-hole interaction effect in this regime. We find that the temperature dependence of the conductivity and the parallel-field magnetoresistance are in agreement with this description, and determine the Fermi-liquid interaction constant $F_0^σ$ which controls the sign of $dρ/dT$. △ Less

Submitted 14 September, 2001; originally announced September 2001.

Comments: 4 pages, 4 figures

Modulation origin of 1/f noise in two-dimensional hop**

Authors: V. Pokrovskii, A. K. Savchenko, W. R. Tribe, E. H. Linfield

Abstract: We show that 1/f noise in a two-dimensional electron gas with hop** conduction can be explained by the modulation of conducting paths by fluctuating occupancy of non-conducting states. The noise is sensitive to the structure of the critical hop** network, which is varied by changing electron concentration, sample size and temperature. With increasing temperature, it clearly reveals the cross… ▽ More We show that 1/f noise in a two-dimensional electron gas with hop** conduction can be explained by the modulation of conducting paths by fluctuating occupancy of non-conducting states. The noise is sensitive to the structure of the critical hop** network, which is varied by changing electron concentration, sample size and temperature. With increasing temperature, it clearly reveals the crossover between different hop** regimes. △ Less

Submitted 12 September, 2001; originally announced September 2001.

Comments: 4 pages, 4 figures, to be published in Phys.Rev.B (Rapid Communication)

Fermi-liquid behaviour of the low-density 2D hole gas in GaAs/AlGaAs heterostructure at large values of r_s

Authors: Y. Y. Proskuryakov, A. K. Savchenko, S. S. Safonov, M. Pepper, M. Y. Simmons, D. A. Ritchie

Abstract: We examine the validity of the Fermi-liquid description of the dilute 2D hole gas in the crossover from 'metallic'-to-'insulating' behaviour of R(T).It has been established that, at r_s as large as 29, negative magnetoresistance does exist and is well described by weak localisation. The dephasing time extracted from the magnetoresistance is dominated by the T^2 -term due to Landau scattering in… ▽ More We examine the validity of the Fermi-liquid description of the dilute 2D hole gas in the crossover from 'metallic'-to-'insulating' behaviour of R(T).It has been established that, at r_s as large as 29, negative magnetoresistance does exist and is well described by weak localisation. The dephasing time extracted from the magnetoresistance is dominated by the T^2 -term due to Landau scattering in the clean limit. The effect of hole-hole interactions, however, is suppressed when compared with the theory for small r_s. △ Less

Submitted 12 January, 2001; originally announced January 2001.

Comments: 4 pages ReVTeX, 4 ps figures

Journal ref: Phys. Rev. Lett. 86, 4895 (2001)

Metallic and insulating behaviour of the two-dimensional electron gas on a vicinal surface of Si MOSFETs

Authors: S. S. Safonov, S. H. Roshko, A. K. Savchenko, A. G. Pogosov, Z. D. Kvon

Abstract: The resistance R of the 2DEG on the vicinal Si surface shows an unusual behaviour, which is very different from that in the (100) Si MOSFET where an unconventional metal to insulator transition has been reported. The crossover from the insulator with dR/dT<0 to the metal with dR/dT>0 occurs at a low resistance of R_{\Box}^c \sim 0.04h/e^2. At the low-temperature transition, which we attribute to… ▽ More The resistance R of the 2DEG on the vicinal Si surface shows an unusual behaviour, which is very different from that in the (100) Si MOSFET where an unconventional metal to insulator transition has been reported. The crossover from the insulator with dR/dT<0 to the metal with dR/dT>0 occurs at a low resistance of R_{\Box}^c \sim 0.04h/e^2. At the low-temperature transition, which we attribute to the existence of a narrow impurity band at the interface, a distinct hysteresis in the resistance is detected. At higher temperatures, another change in the sign of dR/dT is seen and related to the crossover from the degenerate to non-degenerate 2DEG. △ Less

Submitted 4 March, 2000; originally announced March 2000.

Comments: 4 pages, 4 figures

Enhanced fluctuations of the tunneling density of states near bottoms of Landau bands measured by a local spectrometer

Authors: J. P. Holder, A. K. Savchenko, Vladimir I. Fal'ko, B. Jouault, G. Faini, F. Laruelle, E. Bedel

Abstract: We have found that the local density of states fluctuations (LDOSF) in a disordered metal, detected using an impurity in the barrier as a spectrometer, undergo enhanced (with respect to SdH and dHvA effects) oscillations in strong magnetic fields, omega _cτ> 1. We attribute this to the dominant role of the states near bottoms of Landau bands which give the major contribution to the LDOSF and are… ▽ More We have found that the local density of states fluctuations (LDOSF) in a disordered metal, detected using an impurity in the barrier as a spectrometer, undergo enhanced (with respect to SdH and dHvA effects) oscillations in strong magnetic fields, omega _cτ> 1. We attribute this to the dominant role of the states near bottoms of Landau bands which give the major contribution to the LDOSF and are most strongly affected by disorder. We also demonstrate that in intermediate fields the LDOSF increase with B in accordance with the results obtained in the diffusion approximation. △ Less

Submitted 1 July, 1999; originally announced July 1999.

Comments: 4 pages, 4 figures

Effect of the angular momentum on the magnitude of the current in magneto-tunnelling spectroscopy of quantum dots

Authors: B. Jouault, J. P. Holder, M. Boero, G. Faini, F. Laruelle, E. Bedel, A. K. Savchenko, J. C. Inkson

Abstract: We present an experimental and theoretical study of electron tunnelling through quantum dots which focusses the attention on the amplitude of the current peaks as a function of magnetic field. We demonstrate that the amplitudes of the current peaks in the tunnelling spectra show a dramatically different behaviour as a function of the magnetic field, depending on the angular momentum of the dot s… ▽ More We present an experimental and theoretical study of electron tunnelling through quantum dots which focusses the attention on the amplitude of the current peaks as a function of magnetic field. We demonstrate that the amplitudes of the current peaks in the tunnelling spectra show a dramatically different behaviour as a function of the magnetic field, depending on the angular momentum of the dot state through which tunnelling occurs. This is seen in the non-monotonic behaviour of the current amplitude in magnetic field. Furthermore, the magnetic field severely hinders tunnelling through states with angular momentum parallel to the field, and in some cases it makes it altogether impossible. This type of investigation allows us to directly probe the details of the confined wave functions of the quantum dot. △ Less

Submitted 3 September, 1998; v1 submitted 19 March, 1998; originally announced March 1998.

Comments: 4 pages, 4 figures changed contents and figures, added new data

Resonant Tunneling Spectroscopy of Interacting Localised States -- Observation of the Correlated Current Through Two Impurities

Authors: V. V. Kuznetsov, A. K. Savchenko, D. R. Mace, E. H. Linfield, D. A. Ritchie

Abstract: We study effects of Coulomb interactions between localised states in a potential barrier by measuring resonant-tunneling spectra with a small bias applied along the barrier. In the ohmic regime the conductance of 0.2um--gate lateral GaAs microstructures shows distinct peaks associated with individual localised states. However, when an electric field is applied new states start contributing to th… ▽ More We study effects of Coulomb interactions between localised states in a potential barrier by measuring resonant-tunneling spectra with a small bias applied along the barrier. In the ohmic regime the conductance of 0.2um--gate lateral GaAs microstructures shows distinct peaks associated with individual localised states. However, when an electric field is applied new states start contributing to the current, which becomes a correlated electron flow through two interacting localised states. Several situations of such correlations have been observed, and the conclusions are confirmed by calculations. △ Less

Submitted 2 November, 1997; originally announced November 1997.

Comments: 10 pages, RevTeX, 4 figures, to be published in Phys. Rev. B, Rapid Communication

Metal-insulator transition at B=0 in an ultra-low density ($r_{s}=23$) two dimensional GaAs/AlGaAs hole gas

Authors: M. Y. Simmons, A. R. Hamilton, T. G. Griffiths, A. K. Savchenko, M. Pepper, D. A. Ritchie

Abstract: We have observed a metal-insulator transition in an ultra-low density two dimensional hole gas formed in a high quality GaAs-AlGaAs heterostructure at B=0. At the highest carrier density studied ($p_{s}=2.2x10^{10} cm^{-2}, r_{s}=16$) the hole gas is strongly metallic, with an exceptional mobility of $425,000 cm^{2}V^{-1}s^{-1}$. The low disorder and strength of the many-body interactions in thi… ▽ More We have observed a metal-insulator transition in an ultra-low density two dimensional hole gas formed in a high quality GaAs-AlGaAs heterostructure at B=0. At the highest carrier density studied ($p_{s}=2.2x10^{10} cm^{-2}, r_{s}=16$) the hole gas is strongly metallic, with an exceptional mobility of $425,000 cm^{2}V^{-1}s^{-1}$. The low disorder and strength of the many-body interactions in this sample are highlighted by the observation of re-entrant metal insulator transitions in both the fractional ($ν< 1/3$) and integer ($2 > ν> 1$) quantum Hall regimes. On reducing the carrier density the temperature and electric field dependence of the resistivity show that the sample is still metallic at $p_{s}=1.3x10^{10} cm^{-2}$ ($r_{s}=21$), becoming insulating at $p_{s}{\simeq}1x10^{10} cm^{-2}$. Our results indicate that electron-electron interactions are dominant at these low densities, pointing to the many body origins of this metal-insulator transition. We note that the value of $r_{s}$ at the transition ($r_{s}=23 +/- 2$) is large enough to allow the formation of a weakly pinned Wigner crystal, and is approaching the value calculated for the condensation of a pure Wigner crystal. △ Less

Submitted 12 October, 1997; originally announced October 1997.

Comments: 4 pages, latex, 4 postscript figures, submitted to EP2DS-12 on 21st August 1997, to appear in Physica B

Distribution Function Analysis of Mesoscopic Hop** Conductance Fluctuations

Authors: R. J. F. Hughes, A. K. Savchenko, J. E. F. Frost, E. H. Linfield, J. T. Nicholls, M. Pepper, E. Kogan, M. Kaveh

Abstract: Variable-range hop** (VRH) conductance fluctuations in the gate-voltage characteristics of mesoscopic GaAs and Si transistors are analyzed by means of their full distribution functions (DFs). The forms of the DF predicted by the theory of Raikh and Ruzin have been verified under controlled conditions for both the long, narrow wire and the short, wide channel geometries. The variation of the me… ▽ More Variable-range hop** (VRH) conductance fluctuations in the gate-voltage characteristics of mesoscopic GaAs and Si transistors are analyzed by means of their full distribution functions (DFs). The forms of the DF predicted by the theory of Raikh and Ruzin have been verified under controlled conditions for both the long, narrow wire and the short, wide channel geometries. The variation of the mean square fluctuation size with temperature in wires fabricated from both materials is found to be described quantitatively by Lee's model of VRH along a 1D chain. Armed with this quantitative validation of the VRH model, the DF method is applied to the problem of magnetoconductance in the insulating regime. Here a non-monotonic variation of the magnetoconductance is observed in Si MOSFETS whose sign at low magnetic fields is dependent on the channel geometry. The origin of this defect is discussed within the framework of the interference model of VRH magnetoconductance in terms of narrowing of the DF in a magnetic field. △ Less

Submitted 25 April, 1996; v1 submitted 8 March, 1996; originally announced March 1996.

Comments: Revtex, 24 pages, 9 figures, figures are added

Re-entrant resonant tunneling

Authors: V. V. Kuznetsov, A. K. Savchenko, M. E. Raikh, L. I. Glazman, D. R. Mace, D. A. Ritchie, E. H. Linfield

Abstract: We study the effect of electron-electron interactions on the resonant-tunneling spectroscopy of the localized states in a barrier. Using a simple model of three localized states, we show that, due to the Coulomb interactions, a single state can give rise to two resonant peaks in the conductance as a function of gate voltage, G(Vg). We also demonstrate that an additional higher-order resonance wi… ▽ More We study the effect of electron-electron interactions on the resonant-tunneling spectroscopy of the localized states in a barrier. Using a simple model of three localized states, we show that, due to the Coulomb interactions, a single state can give rise to two resonant peaks in the conductance as a function of gate voltage, G(Vg). We also demonstrate that an additional higher-order resonance with Vg-position in between these two peaks becomes possibile when interactions are taken into account. The corresponding resonant-tunneling process involves two-electron transitions. We have observed both these effects in GaAs transistor microstructures by studying the time evolution of three adjacent G(Vg) peaks caused by fluctuating occupation of an isolated impurity (modulator). The heights of the two stronger peaks exibit in-phase fluctuations. The phase of fluctuations of the smaller middle peak is opposite. The two stronger peaks have their origin in the same localized state, and the third one corresponds to a co-tunneling process. △ Less

Submitted 1 March, 1996; originally announced March 1996.

Comments: 9 pages, REVTeX, 4 figures