Showing 1–6 of 6 results for author: Phillpot, S R

The influence of alloying on the stacking fault energy of gold from density functional theory calculations

Authors: Anuj Goyal, Yanzhong Li, Aleksandr Chernatynskiy, Jay. S. Jayashankar, Michael C. Kautzky, Susan B. Sinnott, Simon. R. Phillpot

Abstract: The generalized stacking fault (SFE) energy curves of pure gold (Au) and its binary alloys with transition metals are determined from density functional theory (DFT). Alloy elements Ag, Al, Cu, Ni, Ti, Zr, Zn, In, Ga, Sn, Mn, Cd, Sn, Ta and Cr are substituted into Au at concentrations up to 4%. A comparison of various proposed methodologies to calculate SFEs is given. The intrinsic SFE decreases f… ▽ More The generalized stacking fault (SFE) energy curves of pure gold (Au) and its binary alloys with transition metals are determined from density functional theory (DFT). Alloy elements Ag, Al, Cu, Ni, Ti, Zr, Zn, In, Ga, Sn, Mn, Cd, Sn, Ta and Cr are substituted into Au at concentrations up to 4%. A comparison of various proposed methodologies to calculate SFEs is given. The intrinsic SFE decreases for all alloying elements from its value for pure Au, but SFE energies (both stable and unstable) vary strongly with the distance of the alloying element from the stacking fault region, and with alloy concentration. The compositional dependence of the SFE on the volume change associated with alloying element is determined. This work demonstrates that the SFE is strongly influenced by misfit strain caused by the alloying elements. Moreover, the computed generalized SFE curves provide information valuable to develo** an understanding of the deformation behavior of Au and Au-alloys. △ Less

Submitted 14 November, 2020; originally announced November 2020.

Dynamics of Graphene/Al Interfaces using COMB3 Potentials

Authors: Difan Zhang, Alexandre F. Fonseca, Tao Liang, Simon R. Phillpot, Susan B. Sinnott

Abstract: This work describes the development of a third-generation charge optimized many-body (COMB3) potential for Al-C and its application to the investigation of aluminum/graphene nanostructures. In particular, the new COMB3 potential was used to investigate the interactions of aluminum surfaces with pristine and defective graphene sheets. Classical molecular dynamics simulations were performed at tempe… ▽ More This work describes the development of a third-generation charge optimized many-body (COMB3) potential for Al-C and its application to the investigation of aluminum/graphene nanostructures. In particular, the new COMB3 potential was used to investigate the interactions of aluminum surfaces with pristine and defective graphene sheets. Classical molecular dynamics simulations were performed at temperatures of 300-900K to investigate the structural evolution of these interfaces. The results indicate that although the interfaces between Al and graphene are mostly weakly bonded, aluminum carbide can form under the right conditions, including the presence of vacancy defects in graphene, undercoordinated Al in surface regions with sharp boundaries, and at high temperatures. COMB3 potentials were further used to examine a new method to transfer graphene between Al surfaces as well as between Al and Cu surfaces by controlling the angle of the graphene between the two surfaces. The findings indicate that by controlling the peeling angles it is possible to transfer graphene without any damage from the surface having greater graphene/surface adhesion to another surface with less adhesion. △ Less

Submitted 30 September, 2019; originally announced September 2019.

Comments: This is the version of the manuscript submitted for publication

Journal ref: Phys. Rev. Materials 3, 114002 (2019)

The conundrum of relaxation volumes in first-principles calculations of charge defects

Authors: Anuj Goyal, Kiran Mathew, Richard G. Hennig, Aleksandr Chernatynskiy, Christopher R. Stank, Samuel T. Murphy, David A. Andersson, Simon R. Phillpot, Blas P. Uberuaga

Abstract: The defect relaxation volumes obtained from density-functional theory (DFT) calculations of charged vacancies and interstitials are much larger than their neutral counterparts, seemingly unphysically large. In this work, we investigate the possible reasons for this and revisit the methods that address the calculation of charged defect structures in periodic DFT. We probe the dependence of the prop… ▽ More The defect relaxation volumes obtained from density-functional theory (DFT) calculations of charged vacancies and interstitials are much larger than their neutral counterparts, seemingly unphysically large. In this work, we investigate the possible reasons for this and revisit the methods that address the calculation of charged defect structures in periodic DFT. We probe the dependence of the proposed energy corrections to charged defect formation energies on relaxation volumes and find that corrections such as the image charge correction and the alignment correction, which can lead to sizable changes in defect formation energies, have an almost negligible effect on the charged defect relaxation volume. We also investigate the volume for the net neutral defect reactions comprised of individual charged defects, and find that the aggregate formation volumes have reasonable magnitudes. This work highlights an important issue that, as for defect formation energies, the defect formation volumes depend on the choice of reservoir. We show that considering the change in volume of the electron reservoir in the formation reaction of the charged defects, analogous to how volumes of atoms are accounted for in defect formation volumes, can renormalize the formation volumes of charged defects such that they are comparable to neutral defects. This approach enables the description of the elastic properties of isolated charged defects within the overall neutral material, beyond the context of the overall defect reactions that produce the charged defect. △ Less

Submitted 13 April, 2017; originally announced April 2017.

Phonon Density of States and Anharmonicity of UO2

Authors: Judy W. L. Pang, Aleksandr Chernatynskiy, Bennett C. Larson, William J. L. Buyers, Douglas L. Abernathy, Kenneth J. McClellan, Simon R. Phillpot

Abstract: Phonon density of states (PDOS) measurements have been performed on polycrystalline UO2 at 295 and 1200 K using time-of-flight inelastic neutron scattering to investigate the impact of anharmonicity on the vibrational spectra and to benchmark ab initio PDOS simulations performed on this strongly correlated Mott-insulator. Time-of-flight PDOS measurements include anharmonic linewidth broadening inh… ▽ More Phonon density of states (PDOS) measurements have been performed on polycrystalline UO2 at 295 and 1200 K using time-of-flight inelastic neutron scattering to investigate the impact of anharmonicity on the vibrational spectra and to benchmark ab initio PDOS simulations performed on this strongly correlated Mott-insulator. Time-of-flight PDOS measurements include anharmonic linewidth broadening inherently and the factor of ~ 7 enhancement of the oxygen spectrum relative to the uranium component by the neutron weighting increases sensitivity to the oxygen-dominated optical phonon modes. The first-principles simulations of quasi-harmonic PDOS spectra were neutron-weighted and anharmonicity was introduced in an approximate way by convolution with wavevector-weighted averages over our previously measured phonon linewidths for UO2 that are provided in numerical form. Comparisons between the PDOS measurements and the simulations show reasonable agreement overall, but they also reveal important areas of disagreement for both high and low temperatures. The discrepancies stem largely from an ~ 10 meV compression in the overall bandwidth (energy range) of the oxygen-dominated optical phonons in the simulations. A similar linewidth-convoluted comparison performed with the PDOS spectrum of Dolling et al. obtained by shell-model fitting to their historical phonon dispersion measurements shows excellent agreement with the time-of-flight PDOS measurements reported here. In contrast, we show by comparisons of spectra in linewidth-convoluted form that recent first-principles simulations for UO2 fail to account for the PDOS spectrum determined from the measurements of Dolling et al. These results demonstrate PDOS measurements to be stringent tests for ab initio simulations of phonon physics in UO2 and they indicate further the need for advances in theory to address lattice dynamics of UO2. △ Less

Submitted 14 March, 2014; v1 submitted 8 January, 2014; originally announced January 2014.

Comments: Text slightly modified, results unchanged

Journal ref: Phys. Rev. B 89, 115132 (2014)

Multiferroic Thermodynamics

Authors: G. R. Boyd, P. Kumar, S. R. Phillpot

Abstract: We have studied the thermodynamic properties of a multiferroic that couples ferromagnetic and ferroelectric order. Some of the results are independent of the form of the free energy. We calculate the temperature dependence of the electric, magnetic, and magnetoelectric susceptibilities. The cross susceptibility has a temperature dependence related to the mixed (with respect to E and B) derivatives… ▽ More We have studied the thermodynamic properties of a multiferroic that couples ferromagnetic and ferroelectric order. Some of the results are independent of the form of the free energy. We calculate the temperature dependence of the electric, magnetic, and magnetoelectric susceptibilities. The cross susceptibility has a temperature dependence related to the mixed (with respect to E and B) derivatives of the specific heat. The phase transitions are all second order. In particular, the phase boundary T$_M$(E), where T$_M$ is the lower magnetic transition as a function of electric field, is described by the Ehrenfest relation. The magnetoelectric susceptibility is nonzero only below the lower of the two transition temperatures. We study the properties of the specific heat, with and without the inclusion of gaussian fluctuations. The perturbative renormalization group is used to understand the fixed points of the theory, and we include a discussion of the effect inhomogeneities have for this model. △ Less

Submitted 27 January, 2011; originally announced January 2011.

Local Probing of Mesoscopic Physics of Ferroelectric Domain Walls

Authors: Vasudeva Rao Aravind, A. N. Morozovska, I. Grinberg, S. Bhattacharyya, Y. Li, S. Jesse, S. Choudhury, P. Wu, K. Seal, E. A. Eliseev, S. V. Svechnikov, D. Lee, S. R. Phillpot, L. Q. Chen, A. M. Rappe, V. Gopalan, S. V. Kalinin

Abstract: Domain wall dynamics in ferroic materials underpins functionality of data storage and information technology devices. Using localized electric field of a scanning probe microscopy tip, we experimentally demonstrate a surprisingly rich range of polarization reversal behaviors in the vicinity of the initially flat 180°ferroelectric domain wall. The nucleation bias is found to increase by an order of… ▽ More Domain wall dynamics in ferroic materials underpins functionality of data storage and information technology devices. Using localized electric field of a scanning probe microscopy tip, we experimentally demonstrate a surprisingly rich range of polarization reversal behaviors in the vicinity of the initially flat 180°ferroelectric domain wall. The nucleation bias is found to increase by an order of magnitude from a 2D nucleus at the wall to 3D nucleus in the bulk. The wall is thus significantly ferroelectrically softer than the bulk. The wall profoundly affects switching on length scales of the order of micrometers. The mechanism of correlated switching is analyzed using analytical theory and phase-field modeling. The long-range effect is ascribed to wall bending under the influence of a tip bias well below the bulk nucleation field and placed many micrometers away from the wall. These studies provide an experimental link between the macroscopic and mesoscopic physics of domain walls and atomistic models of nucleation. △ Less

Submitted 6 April, 2010; originally announced April 2010.

Comments: 52 pages, 8 figures, 2 appendices, to be submitted to Phys. Rev. B, higher quality figures are available upon request