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A ferromagnetic Eu-Pt surface compound grown below hexagonal boron nitride
Authors:
Alaa Mohammed Idris Bakhit,
Khadiza Ali,
Anna A. Makarova,
Igor Píš,
Federica Bondino,
Roberto Sant,
Saroj P. Dash,
Rodrigo Castrillo,
Yuri Hasegawa,
J. Enrique Ortega,
Laura Fernandez,
Frederik Schiller
Abstract:
One of the fundamental applications for monolayer-thick 2D materials is their use as protective layers of metal surfaces and in-situ intercalated reactive materials in ambient conditions. Here we investigate the structural, electronic, and magnetic properties, as well as the chemical stability in air of a very reactive metal, Europium, after intercalation between a hexagonal boron nitride (hBN) la…
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One of the fundamental applications for monolayer-thick 2D materials is their use as protective layers of metal surfaces and in-situ intercalated reactive materials in ambient conditions. Here we investigate the structural, electronic, and magnetic properties, as well as the chemical stability in air of a very reactive metal, Europium, after intercalation between a hexagonal boron nitride (hBN) layer and a Pt substrate. We demonstrate that Eu intercalation leads to a hBN-covered ferromagnetic EuPt$_2$ surface alloy with divalent Eu$^{2+}$ atoms at the interface. We expose the system to ambient conditions and find a partial conservation of the di-valent signal and hence the Eu-Pt interface. The use of a curved Pt substrate allows us to explore the changes in the Eu valence state and the ambient pressure protection at different substrate planes. The interfacial EuPt$_2$ surface alloy formation remains the same, but the resistance of the protecting hBN layer to ambient conditions is reduced, likely due to a rougher surface and a more discontinuous hBN coating.
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Submitted 21 June, 2023; v1 submitted 27 January, 2023;
originally announced January 2023.
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Effect of the crystallographic c-axis orientation on the tribological properties of the few-layer PtSe2
Authors:
Andrii Kozak,
Michaela Sojkova,
Filip Gucmann,
Michal Bodik,
Karol Vegso,
Edmund Dobrocka,
Igor Pis,
Federica Bondino,
Martin Hulman,
Peter Siffalovic,
Milan Tapajna
Abstract:
Two-dimensional (2D) transition metal dichalcogenides are potential candidates for ultrathin solid-state lubricants in low-dimensional systems owing to their flatness, high in-plane mechanical strength, and low shear interlayer strength. Yet, the effects of surface topography and surface chemistry on the tribological properties of 2D layers are still unclear. In this work, we performed a comparati…
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Two-dimensional (2D) transition metal dichalcogenides are potential candidates for ultrathin solid-state lubricants in low-dimensional systems owing to their flatness, high in-plane mechanical strength, and low shear interlayer strength. Yet, the effects of surface topography and surface chemistry on the tribological properties of 2D layers are still unclear. In this work, we performed a comparative investigation of nanoscale tribological properties of ultra-thin highly-ordered PtSe2 layers deposited on the sapphire substrates with the in-plane and out-of-plane crystallographic orientation of the PtSe2 c-axis flakes, and epitaxial PtSe2 layers. PtSe2 c-axis orientation was found to has an impact on the nanotribological, morphological and electrical properties of PtSe2, in particular the change in the alignment of the PtSe2 flakes from vertical (VA) to horizontal (HA) led to the lowering of the coefficient of friction from 0.21 to 0.16. This observation was accompanied by an increase in the root-mean-square surface roughness from 1.0 to 1.7 nm for the HA and VA films, respectively. The epitaxial films showed lower friction caused by lowering adhesion when compared to other investigated films, whereas the friction coefficient was similar to films with HA flakes. The observed trends in nanoscale friction is attributed to a different distribution of PtSe2 structure.
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Submitted 20 September, 2022; v1 submitted 16 September, 2022;
originally announced September 2022.
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Boron nitride-graphene in-plane hexagonal heterostructure in oxygen environment
Authors:
Elena Magnano,
Silvia Nappini,
Igor Pis,
Tevfik Onur Mentes,
Francesca Genuzio,
Andrea Locatelli,
Federica Bondino
Abstract:
Aiming to improve fabrication protocols for boron nitride and graphene (h-BNG) lateral heterostructures, we studied the growth of h-BNG thin films on platinum and their behavior in an oxygen environment. We employed a surface science approach based on advanced spectroscopy and imaging techniques to investigate the evolution of surface stoichiometry and chemical intermediates at each reaction step.…
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Aiming to improve fabrication protocols for boron nitride and graphene (h-BNG) lateral heterostructures, we studied the growth of h-BNG thin films on platinum and their behavior in an oxygen environment. We employed a surface science approach based on advanced spectroscopy and imaging techniques to investigate the evolution of surface stoichiometry and chemical intermediates at each reaction step. During oxygen exposure at increasing temperatures, we observed progressive and subsequent intercalation of oxygen, and selective etching of graphene accompanied by the oxidation of boron. Additionally, by exploiting the O2 etching selectivity towards graphene at 250°C and repeating growth cycles, we obtained in-plane h-BNG layers with controllable compositions and vertically stacked h-BN/Gr heterostructures without the use of consecutive transfer procedures. The growth using a single precursor molecule can be beneficial for the development of versatile atomically thin layers for electronic devices.
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Submitted 24 August, 2022; v1 submitted 23 August, 2022;
originally announced August 2022.
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Origin and Quantitative Description of the NESSIAS Effect at Si Nanostructures
Authors:
Dirk König,
Michael Frentzen,
Daniel Hiller,
Noël Wilck,
Giovanni Di Santo,
Luca Petaccia,
Igor Pìs,
Federica Bondino,
Elena Magnano,
Joachim Mayer,
Joachim Knoch,
Sean C. Smith
Abstract:
The electronic structure of low nanoscale (LNS) intrinsic silicon (i-Si) embedded in SiO2 vs. Si3N4 shifts away from vs. towards the vacuum level Evac, as described by the Nanoscale Electronic Structure Shift Induced by Anions at Surfaces (NESSIAS). Here, we fully explain the NESSIAS based on the quantum chemical properties of the elements involved. Deriving an analytic parameter Lambda to predict…
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The electronic structure of low nanoscale (LNS) intrinsic silicon (i-Si) embedded in SiO2 vs. Si3N4 shifts away from vs. towards the vacuum level Evac, as described by the Nanoscale Electronic Structure Shift Induced by Anions at Surfaces (NESSIAS). Here, we fully explain the NESSIAS based on the quantum chemical properties of the elements involved. Deriving an analytic parameter Lambda to predict the highest occupied molecular orbital energy of Si nanocrystals (NCs), we use various hybrid-DFT methods and NC sizes to verify the accuracy of Lambda. We report on first experimental data of Si nanowells (NWells) embedded in SiO2 vs. Si3N4 by X-ray absorption spectroscopy in total fluorescence yield mode (XAS-TFY) which are complemented by ultraviolet photoelectron spectroscopy (UPS), characterizing their conduction band and valence band edge energies E_C and E_V, respectively. Scanning the valence band sub-structure by UPS over NWell thickness, we derive an accurate estimate of EV shifted purely by spatial confinement, and thus the actual E_V shift due to NESSIAS. For 1.9 nm thick NWells in SiO2 vs. Si3N4, we get offsets of Delta E_C = 0.56 eV and Delta E_V = 0.89 eV, demonstrating a type II homojunction in LNS i-Si. This p/n junction generated by the NESSIAS eliminates any deteriorating impact of impurity dopants, offering undoped ultrasmall Si electronic devices with much reduced physical gate lengths and CMOS-compatible materials.
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Submitted 23 August, 2022;
originally announced August 2022.
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Robust electronic and tunable magnetic states in Sm$ _{2} $NiMnO$ _{6} $ ferromagnetic insulator
Authors:
Supriyo Majumder,
Malvika Tripathi,
I Píš,
S Nappini,
P Rajput,
S N Jha,
R J Choudhary,
D M Phase
Abstract:
Ferromagnetic insulators (FM-Is) are the materials of interest for new generation quantum electronic applications. Here, we have investigated the physical observables depicting FM-I ground states in epitaxial Sm$ _{2} $NiMnO$ _{6} $ (SNMO) double perovskite thin films fabricated under different conditions to realize different level of Ni/Mn anti-site disorders (ASDs). The presence of ASDs immensel…
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Ferromagnetic insulators (FM-Is) are the materials of interest for new generation quantum electronic applications. Here, we have investigated the physical observables depicting FM-I ground states in epitaxial Sm$ _{2} $NiMnO$ _{6} $ (SNMO) double perovskite thin films fabricated under different conditions to realize different level of Ni/Mn anti-site disorders (ASDs). The presence of ASDs immensely influence the characteristic magnetic and anisotropy behaviors in SNMO system by introducing short scale antiferromagnetic interactions in predominant long range FM ordered host matrix. Charge disproportion between cation sites in form of $ Ni^{2+}+Mn^{4+} \longrightarrow Ni^{3+}+Mn^{3+} $, causes mixed valency in both Ni and Mn species, which is found insensitive to ASD concentrations. Temperature dependent photo emission, photo absorption measurements duly combined with cluster model configuration interaction simulations, suggest that the eigenstates of Ni and Mn cations can be satisfactorily described as a linear combination of the unscreened $ d^{n} $ and screened $ d^{n+1} \underline{L} $ ($ \underline{L} $: O 2\textit{p} hole) states. The electronic structure across the Fermi level (E$ _{F} $) exhibits closely spaced Ni $ 3d $, Mn $ 3d $ and O $ 2p $ states. From occupied and unoccupied bands, estimated values of the Coulomb repulsion energy ($ U $) and ligand to metal charge transfer energy ($ Δ$), indicate charge transfer insulating nature, where remarkable modification in Ni/Mn $ 3d $ - O $ 2p $ hybridization takes place across the FM transition temperature. Existence of ASD broadens the Ni, Mn $ 3d $ spectral features, whereas spectral positions are found to be unaltered. Hereby, present work demonstrates SNMO thin film as a FM-I system, where FM state can be tuned by manipulating ASD in the crystal structure, while I state remains intact.
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Submitted 19 April, 2022;
originally announced April 2022.
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Tracking interfacial changes of graphene/Ge(110) during in-vacuum annealing
Authors:
L. Camilli,
M. Galbiati,
L. Di Gaspare,
M. De Seta,
I. Píš,
F. Bondino,
A. Caporale,
V. -P. Veigang-Radulescu,
S. Hofmann,
A. Sodo,
R. Gunnella,
L. Persichetti
Abstract:
Graphene quality indicators obtained by Raman spectroscopy have been correlated to the structural changes of the graphene/Germanium interface as a function of in-vacuum thermal annealing. Specifically, it is found that graphene becomes markedly defected at 650 °C. By combining scanning tunneling microscopy, x-Ray Photoelectron Spectroscopy and Near Edge x-ray Absorption Fine Structure Spectroscopy…
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Graphene quality indicators obtained by Raman spectroscopy have been correlated to the structural changes of the graphene/Germanium interface as a function of in-vacuum thermal annealing. Specifically, it is found that graphene becomes markedly defected at 650 °C. By combining scanning tunneling microscopy, x-Ray Photoelectron Spectroscopy and Near Edge x-ray Absorption Fine Structure Spectroscopy, we conclude that these defects are due to the release of H_{2} gas trapped at the graphene/Germanium interface. The H_{2} gas was produced following the transition from the as-grown hydrogen-termination of the Ge(110) surface to the emergence of surface reconstructions in the substrate. Interestingly, a complete self-healing process is observed in graphene upon annealing to 800 °C. The subtle interplay revealed between the microscopic changes occurring at the graphene/Germanium interface and graphene's defect density is valuable for advancing graphene growth, controlled 2D-3D heterogeneous materials interfacing and integrated fabrication technology on semiconductors.
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Submitted 20 July, 2022; v1 submitted 5 April, 2022;
originally announced April 2022.
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The crystal structure, chemical bonding and magnetic properties of the intercalation compounds Cr$_x$ZrTe$_2$ ($x$ = 0-0.3)
Authors:
A. S. Shkvarin,
A. A. Titov,
A. I. Merentsov,
E. G. Shkvarina,
M. S. Postnikov,
I. Pis,
S. Nappini,
P. A. Agzamova,
A. S. Volegov,
A. N. Titov
Abstract:
New intercalation compounds Cr$_x$ZrTe$_2$ were synthesized in the Cr concentration range of x=0-0.3. A thorough study of the crystal and electronic structure has been performed. It was found that there is competition in the distribution of the Cr atoms over the octa- and tetrahedral sites in the van der Waals gap, depending on the Cr content. The ordering of the Cr atoms was found at x = 0.25; at…
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New intercalation compounds Cr$_x$ZrTe$_2$ were synthesized in the Cr concentration range of x=0-0.3. A thorough study of the crystal and electronic structure has been performed. It was found that there is competition in the distribution of the Cr atoms over the octa- and tetrahedral sites in the van der Waals gap, depending on the Cr content. The ordering of the Cr atoms was found at x = 0.25; at the same time, the lattice symmetry decreases from trigonal P-3m1 to monoclinic F2/m. This ordering stabilizes the octahedral coordination of the Cr atoms by Te atoms. The analysis of the experimental data on the electronic structure and DOS calculations showed that the Cr 3d states are spin-split.
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Submitted 24 May, 2021; v1 submitted 5 May, 2021;
originally announced May 2021.
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Soft X-ray spectroscopies in liquids and at solid-liquid interface at BACH beamline at Elettra
Authors:
Silvia Nappini,
Luca D'Amario,
Marco Favaro,
Simone Dal Zilio,
Federico Salvador,
Erik Betz-Guttner,
Andrea Fondacaro,
Igor Pis,
Luca Romanzin,
Alessandro Gambitta,
Federica Bondino,
Marco Lazzarino,
Elena Magnano
Abstract:
The Beamline for Advanced diCHroism (BACH) of the Istituto Officina dei Materiali-Consiglio Nazionale delle Ricerche (IOM-CNR), operating at Elettra synchrotron in Trieste (Italy), works in the extreme ultra violet (EUV)-soft X-ray photon energy range with selectable light polarization, high energy resolution, brilliance and time resolution. The beamline offers a multi-technique approach for the i…
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The Beamline for Advanced diCHroism (BACH) of the Istituto Officina dei Materiali-Consiglio Nazionale delle Ricerche (IOM-CNR), operating at Elettra synchrotron in Trieste (Italy), works in the extreme ultra violet (EUV)-soft X-ray photon energy range with selectable light polarization, high energy resolution, brilliance and time resolution. The beamline offers a multi-technique approach for the investigation of the electronic, chemical, structural, magnetic, and dynamical properties of materials. Recently one of the three end-stations has been dedicated to experiments based on electron transfer processes at the solid/liquid interfaces and during photocatalytic or electrochemical reactions. Suitable cells to perform soft X-ray spectroscopy in the presence of liquids and reagent gases at ambient pressure were developed. Here we present two types of static cells working in transmission or in fluorescence yield, and an electrochemical flow cell which allows to carry out cyclic voltammetry in situ, electrodeposition on a working electrode (WE) and to study chemical reactions in-operando conditions. Examples of X-ray absorption spectroscopy (XAS) measurements performed in ambient conditions and during electrochemical experiments in liquid are presented.
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Submitted 19 December, 2020;
originally announced December 2020.
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The nature of ferromagnetism in the chiral helimagnet $Cr_{1/3}NbS_{2}$
Authors:
N. Sirica,
P. Vilmercati,
F. Bondino,
I. Pis,
S. Nappini,
S. -K. Mo,
A. V. Fedorov,
P. K. Das,
I. Vobornik,
J. Fujii,
L. Li,
D. Sapkota,
D. S. Parker,
D. G. Mandrus,
N. Mannella
Abstract:
The chiral helimagnet, $Cr_{1/3}NbS_{2}$, hosts exotic spin textures, whose influence on the magneto-transport properties, make this material an ideal candidate for future spintronic applications. To date, the interplay between macroscopic magnetic and transport degrees of freedom is believed to result from a reduction in carrier scattering following spin order. Here, we present electronic structu…
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The chiral helimagnet, $Cr_{1/3}NbS_{2}$, hosts exotic spin textures, whose influence on the magneto-transport properties, make this material an ideal candidate for future spintronic applications. To date, the interplay between macroscopic magnetic and transport degrees of freedom is believed to result from a reduction in carrier scattering following spin order. Here, we present electronic structure measurements through the helimagnetic transition temperature, $T_{C}$ that challenges this view by showing a Fermi surface comprised of strongly hybridized Nb- and Cr- derived electronic states, and spectral weight in proximity to the Fermi level to anomalously increases as temperature is lowered below $T_{C}$. These findings are rationalized on the basis of first principle, density functional theory calculations, which reveal a large nearest-neighbor exchange energy, suggesting the interaction between local spin moments and hybridized Nb- and Cr- derived itinerant states to go beyond the perturbative interaction of Ruderman-Kittel-Kasuya-Yosida, suggesting instead a mechanism rooted in a Hund's exchange interaction.
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Submitted 17 August, 2020;
originally announced August 2020.
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High carrier mobility epitaxially aligned PtSe2 films grown by one-zone selenization
Authors:
Michaela Sojkova,
Edmund Dobrocka,
Peter Hutar,
Valeria Taskova,
Lenka Pribusova-Slusna,
Roman Stoklas,
Igor Pis,
Federica Bondino,
Frans Munnik,
Martin Hulman
Abstract:
Few-layer PtSe2 films are promising candidates for applications in high-speed electronics, spintronics and photodetectors. Reproducible fabrication of large-area highly crystalline films is, however, still a challenge. Here, we report the fabrication of epitaxially aligned PtSe2 films using one-zone selenization of pre-sputtered platinum layers. We have studied the influence of the growth conditio…
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Few-layer PtSe2 films are promising candidates for applications in high-speed electronics, spintronics and photodetectors. Reproducible fabrication of large-area highly crystalline films is, however, still a challenge. Here, we report the fabrication of epitaxially aligned PtSe2 films using one-zone selenization of pre-sputtered platinum layers. We have studied the influence of the growth conditions on the structural and electrical properties of the films prepared from Pt layers with different initial thickness. The best results were obtained for PtSe2 layers grown at elevated temperatures (600 °C). The films exhibit signatures for a long-range in-plane ordering resembling an epitaxial growth. Charge carrier mobility determined by Hall-effect measurements is up to 24 cm2/V.s in these films.
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Submitted 22 September, 2020; v1 submitted 29 June, 2020;
originally announced June 2020.
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Local adsorption structure and bonding of porphine on Cu(111) before and after self-metalation
Authors:
D. A. Duncan,
P. Casado Aguilar,
M. Paszkiewicz,
K. Diller,
F. Bondino,
E. Magnano,
F. Klappenberger,
I. Píš,
A. Rubio,
J. V. Barth,
A. Pérez Paz,
F. Allegretti
Abstract:
We have experimentally determined the lateral registry and geometric structure of free-base porphine (2H-P) and copper-metalated porphine (Cu-P) adsorbed on Cu(111), by means of energy-scanned photoelectron diffraction (PhD), and compared the experimental results to density functional theory (DFT) calculations that included van der Waals corrections within the Tkatchenko-Scheffler approach. Both 2…
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We have experimentally determined the lateral registry and geometric structure of free-base porphine (2H-P) and copper-metalated porphine (Cu-P) adsorbed on Cu(111), by means of energy-scanned photoelectron diffraction (PhD), and compared the experimental results to density functional theory (DFT) calculations that included van der Waals corrections within the Tkatchenko-Scheffler approach. Both 2H-P and Cu-P adsorb with their center above a surface bridge site. Consistency is obtained between the experimental and DFT-predicted structural models, with a characteristic change in the corrugation of the four N atoms of the molecule's macrocycle following metalation. Interestingly, comparison with previously published data for cobalt porphine adsorbed on the same surface evidences a distinct increase in the average height of the N atoms above the surface through the series 2H-P, Cu-P, cobalt porphine. Such an increase strikingly anti-correlates the DFT-predicted adsorption strength, with 2H-P having the smallest adsorption height despite the weakest calculated adsorption energy. In addition, our findings suggest that for these macrocyclic compounds, substrate-to-molecule charge transfer and adsorption strength may not be univocally correlated.
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Submitted 6 May, 2019;
originally announced May 2019.
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Growth, Morphology and Stability of Au in Contact with the Bi2Se3(0001) Surface
Authors:
Mattia Fanetti,
Iuliia Mikulska,
Katja Ferfolja,
Paolo Moras,
Polina M. Sheverdyaeva,
Mirco Panighel,
Alberto Lodi-Rizzini,
Igor Píš,
Silvia Nappini,
Matjaž Valant,
Sandra Gardonio
Abstract:
We report a combined microscopy and spectroscopy study of Au deposited on the Bi2Se3(0001) single crystal surface. At room temperature Au forms islands, according to the Volmer-Weber growth mode. Upon annealing to 100° C the Au deposits are not stable and assemble into larger and thicker islands. The topological surface state of Bi2Se3 is weakly affected by the presence of Au. Contrary to other me…
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We report a combined microscopy and spectroscopy study of Au deposited on the Bi2Se3(0001) single crystal surface. At room temperature Au forms islands, according to the Volmer-Weber growth mode. Upon annealing to 100° C the Au deposits are not stable and assemble into larger and thicker islands. The topological surface state of Bi2Se3 is weakly affected by the presence of Au. Contrary to other metals, such as Ag or Cr, a strong chemical instability at the Au/Bi2Se3 interface is ruled out. Core level analysis highlights Bi diffusion toward the surface of Au islands, in agreement with previous findings, while chemical interaction between Au and atomic Se is limited at the interfacial region. For the investigated range of Au coverages, the Au/Bi2Se3 heterostructure is inert towards CO and CO2 exposure at low pressure (10-8 mbar) regime.
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Submitted 22 March, 2019; v1 submitted 11 March, 2019;
originally announced March 2019.
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Fe intercalation under graphene and hexagonal boron nitride in-plane heterostructure on Pt(111)
Authors:
Igor Píš,
Silvia Nappini,
Federica Bondino,
Tevfik Onur Menteş,
Alessandro Sala,
Andrea Locatelli,
Elena Magnano
Abstract:
Metal nanostructures confined between sp2 hybridized 2D materials and solid supports are attracting attention for their potential application in new nanotechnologies. Model studies under well-defined conditions are valuable for understanding the fundamental aspects of the phenomena under 2D covers. In this work we investigate the intercalation of iron atoms through a single layer of mixed graphene…
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Metal nanostructures confined between sp2 hybridized 2D materials and solid supports are attracting attention for their potential application in new nanotechnologies. Model studies under well-defined conditions are valuable for understanding the fundamental aspects of the phenomena under 2D covers. In this work we investigate the intercalation of iron atoms through a single layer of mixed graphene and hexagonal boron nitride on Pt(111) using a combination of spectroscopic and microscopic techniques. Thermally activated diffusion of iron proceeds preferentially under graphene and only partially under hexagonal boron nitride areas. When oxygen is coadsorbed with iron, the intercalation rate is higher, and formation of B2O3 and oxygenated B-C species is observed. Our results suggest the possibility of confining ferromagnetic layers under heterostructures of graphene and hexagonal boron nitride with potential technological implications in the fields of spintronics, magnetic data storage or chemistry under 2D covers.
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Submitted 11 April, 2018;
originally announced April 2018.
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Spectroscopic Evidence for Strong Quantum Spin Fluctuations with Itinerant Character in YFe2Ge2
Authors:
N. Sirica,
F. Bondino,
S. Nappini,
I. Píš,
L. Poudel,
A. D. Christianson,
D. Mandrus,
D. J. Singh,
N. Mannella
Abstract:
We report x-ray absorption and photoemission spectroscopy of the electronic structure in the normal state of metallic YFe2Ge2. The data reveal evidence for large fluctuating spin moments on the Fe sites, as indicated by exchange multiplets appearing in the Fe 3s core level photoemission spectra, even though the compound does not show magnetic order. The magnitude of the multiplet splitting is comp…
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We report x-ray absorption and photoemission spectroscopy of the electronic structure in the normal state of metallic YFe2Ge2. The data reveal evidence for large fluctuating spin moments on the Fe sites, as indicated by exchange multiplets appearing in the Fe 3s core level photoemission spectra, even though the compound does not show magnetic order. The magnitude of the multiplet splitting is comparable to that observed in the normal state of the Fe-pnictide superconductors. This shows a connection between YFe2Ge2 and the Fe-based superconductors even though it contains neither pnictogens nor chalcogens. The implication is that the chemical range of compounds showing at least one of the characteristic magnetic signatures of the Fe-based superconductors is broader than previously thought.
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Submitted 30 January, 2015;
originally announced January 2015.
