Condensed Matter > Materials Science
[Submitted on 5 Apr 2022 (v1), last revised 20 Jul 2022 (this version, v2)]
Title:Tracking interfacial changes of graphene/Ge(110) during in-vacuum annealing
View PDFAbstract:Graphene quality indicators obtained by Raman spectroscopy have been correlated to the structural changes of the graphene/Germanium interface as a function of in-vacuum thermal annealing. Specifically, it is found that graphene becomes markedly defected at 650 °C. By combining scanning tunneling microscopy, x-Ray Photoelectron Spectroscopy and Near Edge x-ray Absorption Fine Structure Spectroscopy, we conclude that these defects are due to the release of H_{2} gas trapped at the graphene/Germanium interface. The H_{2} gas was produced following the transition from the as-grown hydrogen-termination of the Ge(110) surface to the emergence of surface reconstructions in the substrate. Interestingly, a complete self-healing process is observed in graphene upon annealing to 800 °C. The subtle interplay revealed between the microscopic changes occurring at the graphene/Germanium interface and graphene's defect density is valuable for advancing graphene growth, controlled 2D-3D heterogeneous materials interfacing and integrated fabrication technology on semiconductors.
Submission history
From: Luca Persichetti [view email][v1] Tue, 5 Apr 2022 08:05:20 UTC (3,925 KB)
[v2] Wed, 20 Jul 2022 07:36:17 UTC (1,464 KB)
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