Incoherent transport on the $ν=2/3$ quantum Hall edge
Authors:
Casey Nosiglia,
**hong Park,
Bernd Rosenow,
Yuval Gefen
Abstract:
The nature of edge state transport in quantum Hall systems has been studied intensely ever since Halperin [1] noted its importance for the quantization of the Hall conductance. Since then, there have been many developments in the study of edge states in the quantum Hall effect, including the prediction of multiple counter-propagating modes in the fractional quantum Hall regime, the prediction of e…
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The nature of edge state transport in quantum Hall systems has been studied intensely ever since Halperin [1] noted its importance for the quantization of the Hall conductance. Since then, there have been many developments in the study of edge states in the quantum Hall effect, including the prediction of multiple counter-propagating modes in the fractional quantum Hall regime, the prediction of edge mode renormalization due to disorder, and studies of how the sample confining potential affects the edge state structure (edge reconstruction), among others. In this paper, we study edge transport for the $ν_{\text{bulk}}=2/3$ edge in the disordered, fully incoherent transport regime. To do so, we use a hydrodynamic approximation for the calculation of voltage and temperature profiles along the edge of the sample. Within this formalism, we study two different bare mode structures with tunneling: the original edge structure predicted by Wen [2] and MacDonald [3], and the more complicated edge structure proposed by Meir [4], whose renormalization and transport characteristics were discussed by Wang, Meir and Gefen (WMG) [5]. We find that in the fully incoherent regime, the topological characteristics of transport (quantized electrical and heat conductance) are intact, with finite size corrections which are determined by the extent of equilibration. In particular, our calculation of conductance for the WMG model in a double QPC geometry reproduce conductance results of a recent experiment by R. Sabo, et al. [17], which are inconsistent with the model of MacDonald. Our results can be explained in the charge/neutral mode picture, with incoherent analogues of the renormalization fixed points of Ref. [5]. Additionally, we find diffusive $(\sim1/L)$ conductivity corrections to the heat conductance in the fully incoherent regime for both models of the edge.
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Submitted 29 April, 2018; v1 submitted 18 April, 2018;
originally announced April 2018.
Photo-induced Do** in Graphene/Boron Nitride Heterostructures
Authors:
L. Ju,
J. Velasco Jr.,
E. Huang,
S. Kahn,
C. Nosiglia,
H. Tsai,
W. Yang,
T. Taniguchi,
K. Watanabe,
Y. Zhang,
G. Zhang,
M. Crommie,
A. Zettl,
F. Wang
Abstract:
The design of stacks of layered materials in which adjacent layers interact by van der Waals forces[1] has enabled the combination of various two-dimensional crystals with different electrical, optical and mechanical properties, and the emergence of novel physical phenomena and device functionality[2-8]. Here we report photo-induced do** in van der Waals heterostructures (VDHs) consisting of gra…
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The design of stacks of layered materials in which adjacent layers interact by van der Waals forces[1] has enabled the combination of various two-dimensional crystals with different electrical, optical and mechanical properties, and the emergence of novel physical phenomena and device functionality[2-8]. Here we report photo-induced do** in van der Waals heterostructures (VDHs) consisting of graphene and boron nitride layers. It enables flexible and repeatable writing and erasing of charge do** in graphene with visible light. We demonstrate that this photo-induced do** maintains the high carrier mobility of the graphene-boron nitride (G/BN) heterostructure, which resembles the modulation do** technique used in semiconductor heterojunctions, and can be used to generate spatially-varying do** profiles such as p-n junctions. We show that this photo-induced do** arises from microscopically coupled optical and electrical responses of G/BN heterostructures, which includes optical excitation of defect transitions in boron nitride, electrical transport in graphene, and charge transfer between boron nitride and graphene.
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Submitted 19 February, 2014;
originally announced February 2014.
