Condensed Matter > Mesoscale and Nanoscale Physics
[Submitted on 19 Feb 2014]
Title:Photo-induced Do** in Graphene/Boron Nitride Heterostructures
View PDFAbstract:The design of stacks of layered materials in which adjacent layers interact by van der Waals forces[1] has enabled the combination of various two-dimensional crystals with different electrical, optical and mechanical properties, and the emergence of novel physical phenomena and device functionality[2-8]. Here we report photo-induced do** in van der Waals heterostructures (VDHs) consisting of graphene and boron nitride layers. It enables flexible and repeatable writing and erasing of charge do** in graphene with visible light. We demonstrate that this photo-induced do** maintains the high carrier mobility of the graphene-boron nitride (G/BN) heterostructure, which resembles the modulation do** technique used in semiconductor heterojunctions, and can be used to generate spatially-varying do** profiles such as p-n junctions. We show that this photo-induced do** arises from microscopically coupled optical and electrical responses of G/BN heterostructures, which includes optical excitation of defect transitions in boron nitride, electrical transport in graphene, and charge transfer between boron nitride and graphene.
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