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Cooling low-dimensional electron systems into the microkelvin regime
Authors:
Lev V. Levitin,
Harriet van der Vliet,
Terje Theisen,
Stefanos Dimitriadis,
Marijn Lucas,
Antonio D. Corcoles,
Ján Nyéki,
Andrew J. Casey,
Graham Creeth,
Ian Farrer,
David A. Ritchie,
James T. Nicholls,
John Saunders
Abstract:
Two-dimensional electron gases (2DEGs) with high mobility, engineered in semiconductor heterostructures host a variety of ordered phases arising from strong correlations, which emerge at sufficiently low temperatures. The 2DEG can be further controlled by surface gates to create quasi-one dimensional systems, with potential spintronic applications. Here we address the long-standing challenge of co…
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Two-dimensional electron gases (2DEGs) with high mobility, engineered in semiconductor heterostructures host a variety of ordered phases arising from strong correlations, which emerge at sufficiently low temperatures. The 2DEG can be further controlled by surface gates to create quasi-one dimensional systems, with potential spintronic applications. Here we address the long-standing challenge of cooling such electrons to below 1$\,$mK, potentially important for identification of topological phases and spin correlated states. The 2DEG device was immersed in liquid $^3$He, cooled by the nuclear adiabatic demagnetization of copper. The temperature of the 2D electrons was inferred from the electronic noise in a gold wire, connected to the 2DEG by a metallic ohmic contact. With effective screening and filtering, we demonstrate a temperature of 0.9$\,\pm\,$0.1$\,$mK, with scope for significant further improvement. This platform is a key technological step, paving the way to observing new quantum phenomena, and develo** new generations of nanoelectronic devices exploiting correlated electron states.
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Submitted 17 February, 2022; v1 submitted 5 October, 2021;
originally announced October 2021.
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Probing temperature-driven flow lines in a gated two-dimensional electron gas with tunable spin-splitting
Authors:
Yi-Ting Wang,
Gil-Ho Kim,
C. F. Huang,
Shun-Tsung Lo,
Wei-Jen Chen,
J. T. Nicholls,
Li-Hung Lin,
D. A. Ritchie,
Y. H. Chang,
C. -T. Liang,
B. P. Dolan
Abstract:
We study the temperature flow of conductivities in a gated GaAs two-dimensional electron gas (2DEG) containing self-assembled InAs dots and compare the results with recent theoretical predictions. By changing the gate voltage, we are able to tune the 2DEG density and thus vary disorder and spin-splitting. Data for both the spin-resolved and spin-degenerate phase transitions are presented, the form…
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We study the temperature flow of conductivities in a gated GaAs two-dimensional electron gas (2DEG) containing self-assembled InAs dots and compare the results with recent theoretical predictions. By changing the gate voltage, we are able to tune the 2DEG density and thus vary disorder and spin-splitting. Data for both the spin-resolved and spin-degenerate phase transitions are presented, the former collapsing to the latter with decreasing gate voltage and/or decreasing spin-splitting. The experimental results support a recent theory, based on modular symmetry, which predicts how the critical Hall conductivity varies with spin-splitting.
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Submitted 5 September, 2012;
originally announced September 2012.
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Andreev Interferometers in a Strong Radio Frequency Field
Authors:
C. Checkley,
A. Iagallo,
R. Shaikhaidarov,
J. T. Nicholls,
V. T. Petrashov
Abstract:
We experimentally study the influence of 1-40 GHz radiation on the resistance of normal (N) mesoscopic conductors coupled to superconducting (S) loops (Andreev interferometers). At low RF amplitudes we observe the usual h/2e superconducting-phase-periodic resistance oscillations as a function of applied magnetic flux. We find that the oscillations acquire a pi-shift with increasing RF amplitude, a…
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We experimentally study the influence of 1-40 GHz radiation on the resistance of normal (N) mesoscopic conductors coupled to superconducting (S) loops (Andreev interferometers). At low RF amplitudes we observe the usual h/2e superconducting-phase-periodic resistance oscillations as a function of applied magnetic flux. We find that the oscillations acquire a pi-shift with increasing RF amplitude, and consistent with this result the resistance at fixed phase is an oscillating function of the RF amplitude. The results are explained qualitatively as a consequence of two processes. The first is the modulation of the phase difference between the N/S interfaces by the RF field, with the resistance adiabatically following the phase. The second process is the change in the electron temperature caused by the RF field. From the data the response time of the Andreev interferometer is estimated to be <40ps. However there are a number of experimental features which remain unexplained; these include the drastic difference in the behaviour of the resistance at different phases as a function of RF frequency and amplitude, and the existence of a "window of transparency" where heating effects are weak enough to allow for the pi-shift. A microscopic theory describing the influence of RF radiation on Andreev interferometers is required.
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Submitted 14 March, 2010;
originally announced March 2010.
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Andreev Interferometers in a strong Radio-Frequency Field
Authors:
C. Checkley,
A. Iagallo,
R. Shaikhaidarov,
J. T. Nicholls,
V. T. Petrashov
Abstract:
We experimentally study the influence of 1-40 GHz radiation on the resistance of normal (N) mesoscopic conductors coupled to superconducting (S) loops (Andreev interferometers). At low RF amplitudes we observe the usual h/2e superconducting-phase-periodic resistance oscillations as a function of applied magnetic flux. We find that the oscillations acquire a pi-shift with increasing RF amplitude,…
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We experimentally study the influence of 1-40 GHz radiation on the resistance of normal (N) mesoscopic conductors coupled to superconducting (S) loops (Andreev interferometers). At low RF amplitudes we observe the usual h/2e superconducting-phase-periodic resistance oscillations as a function of applied magnetic flux. We find that the oscillations acquire a pi-shift with increasing RF amplitude, and consistent with this result the resistance at fixed phase is an oscillating function of the RF amplitude. The results are explained qualitatively as a consequence of two processes. The first is the modulation of the phase difference between the N/S interfaces by the RF field, with the resistance adiabatically following the phase. The second process is the change in the electron temperature caused by the RF field. From the data the response time of the Andreev interferometer is estimated to be <40ps. However there are a number of experimental features which remain unexplained; these include the drastic difference in the behaviour of the resistance at different phases as a function of RF frequency and amplitude, and the existence of a "window of transparency" where heating effects are weak enough to allow for the pi-shift. A microscopic theory describing the influence of RF radiation on Andreev interferometers is required.
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Submitted 10 March, 2010;
originally announced March 2010.
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Andreev Probe of Persistent Current States in Superconducting Quantum Circuits
Authors:
V. T. Petrashov,
K. G. Chua,
K. M. Marshall,
R. Sh. Shaikhaidarov,
J. T. Nicholls
Abstract:
Using the extraordinary sensitivity of Andreev interferometers to the superconducting phase difference associated with currents, we measure the persistent current quantum states in superconducting loops interrupted by Josephson junctions. Straightforward electrical resistance measurements of the interferometers give continuous read-out of the states, allowing us to construct the energy spectrum…
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Using the extraordinary sensitivity of Andreev interferometers to the superconducting phase difference associated with currents, we measure the persistent current quantum states in superconducting loops interrupted by Josephson junctions. Straightforward electrical resistance measurements of the interferometers give continuous read-out of the states, allowing us to construct the energy spectrum of the quantum circuit. The probe is estimated to be more precise and faster than previous methods, and can measure the local phase difference in a wide range of superconducting circuits.
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Submitted 17 August, 2005; v1 submitted 2 March, 2005;
originally announced March 2005.
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Fano factor reduction on the 0.7 structure in a ballistic one-dimensional wire
Authors:
P. Roche,
J. Segala,
D. C. Glattli,
J. T. Nicholls,
M. Pepper,
A. C. Graham,
K. J. Thomas,
M. Y. Simmons,
D. A. Ritchie
Abstract:
We have measured the non-equilibrium current noise in a ballisticone-dimensional wire which exhibits an additional conductanceplateau at $0.7\times2e^2/h$. The Fano factor shows a clearreduction on the 0.7 structure, and eventually vanishes uponapplying a strong parallel magnetic field. These results provideexperimental evidence that the 0.7 structure is associated withtwo conduction channels wh…
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We have measured the non-equilibrium current noise in a ballisticone-dimensional wire which exhibits an additional conductanceplateau at $0.7\times2e^2/h$. The Fano factor shows a clearreduction on the 0.7 structure, and eventually vanishes uponapplying a strong parallel magnetic field. These results provideexperimental evidence that the 0.7 structure is associated withtwo conduction channels which have different transmissionprobabilities.
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Submitted 6 May, 2004; v1 submitted 6 February, 2004;
originally announced February 2004.
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Spin Properties of Low Density One-Dimensional Wires
Authors:
K. J. Thomas,
J. T. Nicholls,
M. Pepper,
W. R. Tribe,
M. Y. Simmons,
D. A. Ritchie
Abstract:
We report conductance measurements of a ballistic one-dimensional (1D) wire defined in the lower two-dimensional electron gas of a GaAs/AlGaAs double quantum well. At low temperatures there is an additional structure at $0.7(2e^2/h)$ in the conductance, which tends to $e^2/h$ as the electron density is decreased. We find evidence for complete spin polarization in a weakly disorderd 1D wire at ze…
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We report conductance measurements of a ballistic one-dimensional (1D) wire defined in the lower two-dimensional electron gas of a GaAs/AlGaAs double quantum well. At low temperatures there is an additional structure at $0.7(2e^2/h)$ in the conductance, which tends to $e^2/h$ as the electron density is decreased. We find evidence for complete spin polarization in a weakly disorderd 1D wire at zero magnetic field through the observation of a conductance plateau at $e^2/h$, which strengthens in an in-plane magnetic field and disappears with increasing electron density. In all cases studied, with increasing temperature structure occurs at $0.6(2e^2/h)$. We suggest that the 0.7 structure is a many-body spin state excited out of, either the spin-polarized electron gas at low densities, or the spin-degenerate electron gas at high densities.
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Submitted 3 May, 2000;
originally announced May 2000.
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Controlled Wavefunction Mixing in a Strongly Coupled One-Dimensional Wire
Authors:
K. J. Thomas,
J. T. Nicholls,
M. Y. Simmons,
W. R. Tribe,
A. G. Davies,
M. Pepper
Abstract:
We investigate the transport properties of two strongly coupled ballistic one-dimensional (1D) wires, defined by a split-gate structure deposited on a GaAs/AlGaAs double quantum well. Matching the widths and electron densities of the two wires brings them into resonance, forming symmetric and antisymmetric 1D subbands separated by energy gaps that are measured to be larger than their two-dimensi…
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We investigate the transport properties of two strongly coupled ballistic one-dimensional (1D) wires, defined by a split-gate structure deposited on a GaAs/AlGaAs double quantum well. Matching the widths and electron densities of the two wires brings them into resonance, forming symmetric and antisymmetric 1D subbands separated by energy gaps that are measured to be larger than their two-dimensional counterpart. Applying a magnetic field parallel to the wire axes enhances wavefunction mixing at low fields, whereas at high fields the wires become completely decoupled.
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Submitted 18 January, 1999;
originally announced January 1999.
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A Thermometer for the 2D Electron Gas using 1D Thermopower
Authors:
N. J. Appleyard,
J. T. Nicholls,
M. Y. Simmons,
W. R. Tribe,
M. Pepper
Abstract:
We measure the temperature of a 2D electron gas in GaAs from the thermopower of a one-dimensional ballistic constriction, using the Mott relation to confirm the calibration from the electrical conductance. Under hot electron conditions, this technique shows that the power loss by the electrons follows a $T^5$ dependence in the Gruneisen-Bloch regime, as predicted for acoustic phonon emission wit…
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We measure the temperature of a 2D electron gas in GaAs from the thermopower of a one-dimensional ballistic constriction, using the Mott relation to confirm the calibration from the electrical conductance. Under hot electron conditions, this technique shows that the power loss by the electrons follows a $T^5$ dependence in the Gruneisen-Bloch regime, as predicted for acoustic phonon emission with a screened piezoelectric interaction. An independent measurement using conventional thermometry based on Shubnikov-de Haas oscillations gives a $T^3$ loss rate; we discuss reasons for this discrepancy.
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Submitted 14 September, 1998;
originally announced September 1998.
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Interaction Effects in a One-Dimensional Constriction
Authors:
K. J. Thomas,
J. T. Nicholls,
N. J. Appleyard,
M. Pepper,
M. Y. Simmons,
D. R. Mace,
W. R. Tribe,
D. A. Ritchie
Abstract:
We have investigated the transport properties of one-dimensional (1D) constrictions defined by split-gates in high quality GaAs/AlGaAs heterostructures. In addition to the usual quantized conductance plateaus, the equilibrium conductance shows a structure close to $0.7(2e^2/h)$, and in consolidating our previous work [K.~J. Thomas et al., Phys. Rev. Lett. 77, 135 (1996)] this 0.7 structure has b…
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We have investigated the transport properties of one-dimensional (1D) constrictions defined by split-gates in high quality GaAs/AlGaAs heterostructures. In addition to the usual quantized conductance plateaus, the equilibrium conductance shows a structure close to $0.7(2e^2/h)$, and in consolidating our previous work [K.~J. Thomas et al., Phys. Rev. Lett. 77, 135 (1996)] this 0.7 structure has been investigated in a wide range of samples as a function of temperature, carrier density, in-plane magnetic field $B_{\parallel}$ and source-drain voltage $V_{sd}$. We show that the 0.7 structure is not due to transmission or resonance effects, nor does it arise from the asymmetry of the heterojunction in the growth direction. All the 1D subbands show Zeeman splitting at high $B_{\parallel}$, and in the wide channel limit the $g$-factor is $\mid g \mid \approx 0.4$, close to that of bulk GaAs. As the channel is progressively narrowed we measure an exchange-enhanced $g$-factor. The measurements establish that the 0.7 structure is related to spin, and that electron-electron interactions become important for the last few conducting 1D subbands.
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Submitted 19 June, 1998;
originally announced June 1998.
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Correlation Effects on the Coupled Plasmon Modes of a Double Quantum Well
Authors:
N P R Hill,
J. T. Nicholls,
E. H. Linfield,
M. Pepper,
D. A. Ritchie,
G. A. C. Jones,
Ben Yu-Kuang Hu,
Karsten Flensberg
Abstract:
At temperatures comparable to the Fermi temperature, we have measured a plasmon enhanced Coulomb drag in a GaAs/AlGaAs double quantum well electron system. This measurement provides a probe of the many-body corrections to the coupled plasmon modes, and we present a detailed comparison between experiment and theory testing the validity of local field theories. Using a perpendicular magnetic field…
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At temperatures comparable to the Fermi temperature, we have measured a plasmon enhanced Coulomb drag in a GaAs/AlGaAs double quantum well electron system. This measurement provides a probe of the many-body corrections to the coupled plasmon modes, and we present a detailed comparison between experiment and theory testing the validity of local field theories. Using a perpendicular magnetic field to raise the magnetoplasmon energy we can induce a crossover to single-particle Coulomb scattering.
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Submitted 6 March, 1997;
originally announced March 1997.
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Tunneling Between Parallel Two-Dimensional Electron Gases
Authors:
N. Turner,
J. T. Nicholls,
E. H. Linfield,
K. M. Brown,
G. A. C. Jones,
D. A. Ritchie
Abstract:
The tunneling between two parallel two-dimensional electron gases has been investigated as a function of temperature $T$, carrier density $n$, and the applied perpendicular magnetic field $B$. In zero magnetic field the equilibrium resonant lineshape is Lorentzian, reflecting the Lorentzian form of the spectral functions within each layer. From the width of the tunneling resonance the lifetime o…
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The tunneling between two parallel two-dimensional electron gases has been investigated as a function of temperature $T$, carrier density $n$, and the applied perpendicular magnetic field $B$. In zero magnetic field the equilibrium resonant lineshape is Lorentzian, reflecting the Lorentzian form of the spectral functions within each layer. From the width of the tunneling resonance the lifetime of the electrons within a 2DEG has been measured as a function of $n$ and $T$, giving information about the density dependence of the electron-impurity scattering and the temperature dependence of the electron-electron scattering. In a magnetic field there is a general suppression of equilibrium tunneling for fields above $B=0.6$ T. A gap in the tunneling density of states has been measured over a wide range of magnetic fields and filling factors, and various theoretical predictions have been examined. In a strong magnetic field, when there is only one partially filled Landau level in each layer, the temperature dependence of the conductance characteristics has been modeled with a double-Gaussian spectral density.
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Submitted 6 September, 1996;
originally announced September 1996.
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Fractional Quantum Hall Effect in Bilayer Two Dimensional Hole Gas Systems
Authors:
A. R. Hamilton,
M. Y. Simmons,
F. M. Bolton,
N. K. Patel,
I. S. Millard,
J. T. Nicholls,
D. A. Ritchie,
M. Pepper
Abstract:
We have studied the fractional and integer quantum Hall effect in high mobility double layer 2D hole gas systems. The large hole effective mass inhibits tunneling, allowing us to investigate the regime in which the interlayer and intralayer interactions are comparable without significant interlayer tunneling occurring. As the interlayer separation is reduced we observe the formation of bilayer c…
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We have studied the fractional and integer quantum Hall effect in high mobility double layer 2D hole gas systems. The large hole effective mass inhibits tunneling, allowing us to investigate the regime in which the interlayer and intralayer interactions are comparable without significant interlayer tunneling occurring. As the interlayer separation is reduced we observe the formation of bilayer correlated quantum Hall states at total filling factor $ν$=3/2 and $ν$=1. We find that the bilayer $ν$=3/2 state is rapidly destroyed by small carrier density imbalances between the layers, whereas the bilayer $ν$=1 state evolves continuously into the single layer $ν$=1 state.
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Submitted 17 June, 1996;
originally announced June 1996.
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Possible Spin Polarization in a One-Dimensional Electron Gas
Authors:
K. J. Thomas,
J. T. Nicholls,
M. Y. Simmons,
M. Pepper,
D. R. Mace,
D. A. Ritchie
Abstract:
In zero magnetic field, conductance measurements of clean one-dimensional (1D) constrictions defined in GaAs/AlGaAs heterostructures show twenty-six quantized ballistic plateaux, as well as a structure close to $0.7(2e^2/h)$. In an in-plane magnetic field all the 1D subbands show Zeeman splitting and in the wide channel limit the $g$-factor is $\mid g \mid = 0.4$, close to that of bulk GaAs. For…
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In zero magnetic field, conductance measurements of clean one-dimensional (1D) constrictions defined in GaAs/AlGaAs heterostructures show twenty-six quantized ballistic plateaux, as well as a structure close to $0.7(2e^2/h)$. In an in-plane magnetic field all the 1D subbands show Zeeman splitting and in the wide channel limit the $g$-factor is $\mid g \mid = 0.4$, close to that of bulk GaAs. For the last subband spin-splitting originates from the structure at $0.7(2e^2/h)$, indicating spin polarization at $B=0$. The measured enhancement of the $g$-factor as the subbands are depopulated suggests that the ``0.7 structure'' is induced by electron-electron interactions.
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Submitted 3 June, 1996;
originally announced June 1996.
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Distribution Function Analysis of Mesoscopic Hop** Conductance Fluctuations
Authors:
R. J. F. Hughes,
A. K. Savchenko,
J. E. F. Frost,
E. H. Linfield,
J. T. Nicholls,
M. Pepper,
E. Kogan,
M. Kaveh
Abstract:
Variable-range hop** (VRH) conductance fluctuations in the gate-voltage characteristics of mesoscopic GaAs and Si transistors are analyzed by means of their full distribution functions (DFs). The forms of the DF predicted by the theory of Raikh and Ruzin have been verified under controlled conditions for both the long, narrow wire and the short, wide channel geometries. The variation of the me…
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Variable-range hop** (VRH) conductance fluctuations in the gate-voltage characteristics of mesoscopic GaAs and Si transistors are analyzed by means of their full distribution functions (DFs). The forms of the DF predicted by the theory of Raikh and Ruzin have been verified under controlled conditions for both the long, narrow wire and the short, wide channel geometries. The variation of the mean square fluctuation size with temperature in wires fabricated from both materials is found to be described quantitatively by Lee's model of VRH along a 1D chain. Armed with this quantitative validation of the VRH model, the DF method is applied to the problem of magnetoconductance in the insulating regime. Here a non-monotonic variation of the magnetoconductance is observed in Si MOSFETS whose sign at low magnetic fields is dependent on the channel geometry. The origin of this defect is discussed within the framework of the interference model of VRH magnetoconductance in terms of narrowing of the DF in a magnetic field.
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Submitted 25 April, 1996; v1 submitted 8 March, 1996;
originally announced March 1996.
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Tunneling Between Two-Dimensional Electron Gases in a Weak Magnetic Field
Authors:
N. Turner,
J. T. Nicholls,
K. M. Brown,
E. H. Linfield,
M. Pepper,
D. A. Ritchie,
G. A. C. Jones
Abstract:
We have measured the tunneling between two two-dimensional electron gases (2DEGs) in weak magnetic fields, when the carrier densities of the two electron layers are matched. At zero magnetic field, B=0, the lineshape of the equilibrium tunneling resonance is best fit by a Lorentzian, with a linewidth which is determined by the roughness of the tunnel barrier. For $B\not=0$ with filling factors…
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We have measured the tunneling between two two-dimensional electron gases (2DEGs) in weak magnetic fields, when the carrier densities of the two electron layers are matched. At zero magnetic field, B=0, the lineshape of the equilibrium tunneling resonance is best fit by a Lorentzian, with a linewidth which is determined by the roughness of the tunnel barrier. For $B\not=0$ with filling factors $ν\gg 1$, there is a suppression of the resonant tunneling conductance about zero bias, $V_{\text{sd}}=0$. This low field signature of the high field Coulomb gap shows the same linear $B$ dependence as previously measured for $ν<1$.
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Submitted 8 March, 1995;
originally announced March 1995.
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Tunneling Between Two-Dimensional Electron Gases in a Strong Magnetic Field
Authors:
K. M. Brown,
N. Turner,
J. T. Nicholls,
E. H. Linfield,
M. Pepper,
D. A. Ritchie,
G. A. C. Jones
Abstract:
We have measured the tunneling between two two-dimensional electron gases at high magnetic fields $B$, when the carrier densities of the two electron layers are matched. For filling factors $ν<1$, there is a gap in the current-voltage characteristics centered about $V=0$, followed by a tunneling peak at $\sim 6$~mV. Both features have been observed before and have been attributed to electron-ele…
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We have measured the tunneling between two two-dimensional electron gases at high magnetic fields $B$, when the carrier densities of the two electron layers are matched. For filling factors $ν<1$, there is a gap in the current-voltage characteristics centered about $V=0$, followed by a tunneling peak at $\sim 6$~mV. Both features have been observed before and have been attributed to electron-electron interactions within a layer. We have measured high field tunneling peak positions and fitted gap parameters that are proportional to $B$, and independent of the carrier densities of the two layers. This suggests a different origin for the gap to that proposed by current theories, which predict a $\sqrt{B}$ dependence.
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Submitted 3 October, 1994;
originally announced October 1994.
