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Phosphorus-Controlled Nanoepitaxy in the Asymmetric Growth of GaAs-InP Core-Shell Bent Nanowires
Authors:
Spencer McDermott,
Trevor R. Smith,
Ray R. LaPierre,
Ryan B. Lewis
Abstract:
Breakthroughs extending nanostructure engineering beyond what is possible with current fabrication techniques will be crucial for enabling next-generation nanotechnologies. Nanoepitaxy of strain-engineered bent nanowire heterostructures presents a promising platform for realizing bottom-up and scalable fabrication of nanowire devices. The synthesis of these structures requires the selective asymme…
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Breakthroughs extending nanostructure engineering beyond what is possible with current fabrication techniques will be crucial for enabling next-generation nanotechnologies. Nanoepitaxy of strain-engineered bent nanowire heterostructures presents a promising platform for realizing bottom-up and scalable fabrication of nanowire devices. The synthesis of these structures requires the selective asymmetric deposition of lattice-mismatched shells-a complex growth process which is not well understood. We present the nanoepitaxial growth of GaAs-InP core-shell bent nanowires and connecting nanowire pairs to form nano-arches. Compositional analysis of nanowire cross-sections reveals the critical role of adatom diffusion in the nanoepitaxial growth process, which leads to two distinct growth regimes: indium-diffusion limited growth and phosphorous-limited growth. The highly controllable phosphorous-limited growth mode is employed to synthesize connected nanowire pairs and quantify the role of flux shadowing on the shell growth process. These results provide important insight into three-dimensional nanoepitaxy and enable new possibilities for nanowire device fabrication.
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Submitted 14 May, 2023; v1 submitted 12 May, 2023;
originally announced May 2023.
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Efficient Wave Optics Modeling of Nanowire Solar Cells Using Rigorous Coupled Wave Analysis
Authors:
Kyle W. Robertson,
Ray R. LaPierre,
Jacob J. Krich
Abstract:
We investigate the accuracy of rigorous coupled wave analysis (RCWA) for near-field computations within cylindrical GaAs nanowire solar cells and discover excellent accuracy with low computational cost at long incident wavelengths, but poor accuracy at short incident wavelengths. These near fields give the carrier generation rate, and their accurate determination is essential for device modeling.…
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We investigate the accuracy of rigorous coupled wave analysis (RCWA) for near-field computations within cylindrical GaAs nanowire solar cells and discover excellent accuracy with low computational cost at long incident wavelengths, but poor accuracy at short incident wavelengths. These near fields give the carrier generation rate, and their accurate determination is essential for device modeling. We implement two techniques for increasing the accuracy of the near fields generated by RCWA, and give some guidance on parameters required for convergence along with an estimate of their associated computation times. The first improvement removes Gibbs phenomenon artifacts from the RCWA fields, and the second uses the extremely well-converged far field absorption to rescale the local fields. These improvements allow a computational speedup between 30 and 1000 times for spectrally integrated calculations, depending on the density of the near fields desired. Some spectrally resolved quantities, especially at short wavelengths, remain expensive, but RCWA is still an excellent method for performing those calculations. These improvements open up the possibility of using RCWA for low cost optical modeling in a full optoelectronic device model of nanowire solar cells.
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Submitted 30 October, 2018;
originally announced October 2018.
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Nb/InAs nanowire proximity junctions from Josephson to quantum dot regimes
Authors:
Kaveh Gharavi,
Gregory W. Holloway,
Ray R. LaPierre,
Jonathan Baugh
Abstract:
The superconducting proximity effect is probed experimentally in Josephson junctions fabricated with InAs nanowires contacted by Nb leads. Contact transparencies $t \sim 0.7$ are observed. The electronic phase coherence length at low temperatures exceeds the channel length. However, the elastic scattering length is a few times shorter than the channel length. Electrical measurements reveal two reg…
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The superconducting proximity effect is probed experimentally in Josephson junctions fabricated with InAs nanowires contacted by Nb leads. Contact transparencies $t \sim 0.7$ are observed. The electronic phase coherence length at low temperatures exceeds the channel length. However, the elastic scattering length is a few times shorter than the channel length. Electrical measurements reveal two regimes of quantum transport: (i) the Josephson regime, characterized by a dissipationless current up to $\sim 100$ nA, and (ii) the quantum dot regime, characterized by the formation of Andreev Bound States (ABS) associated with spontaneous quantum dots inside the nanowire channel. In regime (i), the behaviour of the critical current $I_c$ versus an axial magnetic field $B_{||}$ shows an unexpected modulation and persistence to fields $>2$ T. In the quantum dot regime, the ABS are modelled as the current-biased solutions of an Anderson-type model. The applicability of devices in both transport regimes to Majorana fermion experiments is discussed.
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Submitted 25 November, 2016;
originally announced November 2016.
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Electrical characterization of chemical and dielectric passivation of InAs nanowires
Authors:
Gregory W. Holloway,
Chris M. Haapamaki,
Paul Kuyanov,
Ray R. LaPierre,
Jonathan Baugh
Abstract:
The native oxide at the surface of III-V nanowires, such as InAs, can be a major source of charge noise and scattering in nanowire-based electronics, particularly for quantum devices operated at low temperatures. Surface passivation provides a means to remove the native oxide and prevent its regrowth. Here, we study the effects of surface passivation and conformal dielectric deposition by measurin…
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The native oxide at the surface of III-V nanowires, such as InAs, can be a major source of charge noise and scattering in nanowire-based electronics, particularly for quantum devices operated at low temperatures. Surface passivation provides a means to remove the native oxide and prevent its regrowth. Here, we study the effects of surface passivation and conformal dielectric deposition by measuring electrical conductance through nanowire field effect transistors treated with a variety of surface preparations. By extracting field effect mobility, subthreshold swing, threshold shift with temperature, and the gate hysteresis for each device, we infer the relative effects of the different treatments on the factors influencing transport. It is found that a combination of chemical passivation followed by deposition of an aluminum oxide dielectric shell yields the best results compared to the other treatments, and comparable to untreated nanowires. Finally, it is shown that an entrenched, top-gated device using an optimally treated nanowire can successfully form a stable double quantum dot at low temperatures. The device has excellent electrostatic tunability owing to the conformal dielectric layer and the combination of local top gates and a global back gate.
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Submitted 2 September, 2016; v1 submitted 4 June, 2016;
originally announced June 2016.
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Optimizations of GaAs Nanowire Solar Cells
Authors:
Anna H. Trojnar,
Christopher E. Valdivia,
Ray R. LaPierre,
Karin Hinzer,
Jacob J. Krich
Abstract:
The efficiency of GaAs nanowire solar cells can be significantly improved without any new processing steps or material requirements. We report coupled optoelectronic simulations of a GaAs nanowire (NW) solar cell with vertical p-i-n junction and high band gap AlInP passivating shell. Our frequency-dependent model facilitates calculation of quantum efficiency for the first time in NW solar cells. F…
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The efficiency of GaAs nanowire solar cells can be significantly improved without any new processing steps or material requirements. We report coupled optoelectronic simulations of a GaAs nanowire (NW) solar cell with vertical p-i-n junction and high band gap AlInP passivating shell. Our frequency-dependent model facilitates calculation of quantum efficiency for the first time in NW solar cells. For passivated NWs, we find that short-wavelength photons can be most effectively harnessed by using a thin emitter while long-wavelength photons are best utilized by extending the intrinsic region to the nanowire/substrate interface, and using the substrate as a base. These two easily implemented changes, coupled with the increase of NW height to 3.5 um with realistic surface recombination in the presence of a passivation shell, result in a NW solar cell with greater than 19% efficiency.
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Submitted 14 May, 2016;
originally announced May 2016.
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Josephson Interference due to Orbital States in a Nanowire Proximity Effect Junction
Authors:
Kaveh Gharavi,
Gregory W. Holloway,
Chris M. Haapamaki,
Mohammad H. Ansari,
Mustafa Muhammad,
Ray R. LaPierre,
Jonathan Baugh
Abstract:
The Josephson supercurrent in a Nb-InAs nanowire-Nb junction was studied experimentally. The nanowire goes superconducting due to the proximity effect, and can sustain a phase coherent supercurrent. An unexpected modulation of the junction critical current in an axial magnetic field is observed, which we attribute to a novel form of Josephson interference, due to the multi-band nature of the nanow…
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The Josephson supercurrent in a Nb-InAs nanowire-Nb junction was studied experimentally. The nanowire goes superconducting due to the proximity effect, and can sustain a phase coherent supercurrent. An unexpected modulation of the junction critical current in an axial magnetic field is observed, which we attribute to a novel form of Josephson interference, due to the multi-band nature of the nanowire. Andreev pairs occupying states of different orbital angular momentum acquire different superconducting phases, producing oscillations of the critical current versus magnetic flux. We develop a semi-classical multi-band model that reproduces the experimental data well. While spin-orbit and Zeeman effects are predicted to produce similar behaviour, the orbital effects are dominant in the device studied here. This interplay between orbital states and magnetic field should be accounted for in the study of multi-band nanowire Josephson junctions, in particular, regarding the search for signatures of topological superconductivity in such devices.
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Submitted 18 June, 2014; v1 submitted 29 May, 2014;
originally announced May 2014.
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Magnetoconductance signatures of subband structure in semiconductor nanowires
Authors:
Gregory W. Holloway,
Daryoush Shiri,
Chris M. Haapamaki,
Kyle Willick,
Grant Watson,
Ray R. LaPierre,
Jonathan Baugh
Abstract:
The radial confining potential in a semiconductor nanowire plays a key role in determining its quantum transport properties. Previous reports have shown that an axial magnetic field induces flux-periodic conductance oscillations when the electronic states are confined to a shell. This effect is due to the coupling of orbital angular momentum to the magnetic flux. Here, we perform calculations of t…
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The radial confining potential in a semiconductor nanowire plays a key role in determining its quantum transport properties. Previous reports have shown that an axial magnetic field induces flux-periodic conductance oscillations when the electronic states are confined to a shell. This effect is due to the coupling of orbital angular momentum to the magnetic flux. Here, we perform calculations of the energy level structure, and consequently the conductance, for more general cases ranging from a flat potential to strong surface band bending. The transverse states are not confined to a shell, but are distributed across the nanowire. It is found that, in general, the subband energy spectrum is aperiodic as a function of both gate voltage and magnetic field. In principle, this allows for precise identification of the occupied subbands from the magnetoconductance patterns of quasi-ballistic devices. The aperiodicity becomes more apparent as the potential flattens. A quantitative method is introduced for matching features in the conductance data to the subband structure resulting from a particular radial potential, where a functional form for the potential is used that depends on two free parameters. Finally, a short-channel InAs nanowire FET device is measured at low temperature in search of conductance features that reveal the subband structure. Features are identified and shown to be consistent with three specific subbands. The experiment is analyzed in the context of the weak localization regime, however, we find that the subband effects predicted for ballistic transport should remain visible when back scattering dominates over interband scattering, as is expected for this device.
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Submitted 17 November, 2014; v1 submitted 23 May, 2013;
originally announced May 2013.
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Temperature-dependent electron mobility in InAs nanowires
Authors:
Nupur Gupta,
Yipu Song,
Gregory W. Holloway,
Urbasi Sinha,
Chris Haapamaki,
Ray R. LaPierre,
Jonathan Baugh
Abstract:
Effective electron mobilities are obtained by transport measurements on InAs nanowire field-effect transistors at temperatures ranging from 10-200 K. The mobility increases with temperature below ~ 30 - 50 K, and then decreases with temperature above 50 K, consistent with other reports. The magnitude and temperature dependence of the observed mobility can be explained by Coulomb scattering from io…
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Effective electron mobilities are obtained by transport measurements on InAs nanowire field-effect transistors at temperatures ranging from 10-200 K. The mobility increases with temperature below ~ 30 - 50 K, and then decreases with temperature above 50 K, consistent with other reports. The magnitude and temperature dependence of the observed mobility can be explained by Coulomb scattering from ionized surface states at typical densities. The behaviour above 50 K is ascribed to the thermally activated increase in the number of scatterers, although nanoscale confinement also plays a role as higher radial subbands are populated, leading to interband scattering and a shift of the carrier distribution closer to the surface. Scattering rate calculations using finite-element simulations of the nanowire transistor confirm that these mechanisms are able to explain the data.
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Submitted 23 May, 2013; v1 submitted 12 October, 2012;
originally announced October 2012.
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Critical shell thickness for InAs-Al$_x$In$_{1-x}$As(P) core-shell nanowires
Authors:
C. M. Haapamaki,
J. Baugh,
R. R. LaPierre
Abstract:
InAs nanowires with Al$_x$In$_{1-x}$P or Al$x$In$_{1-x}$As shells were grown on GaAs substrates by the Au-assisted vapour-liquid-solid (VLS) method in a gas source molecular beam epitaxy (GS-MBE) system. Core diameters and shell thicknesses were measured by transmission electron microscopy (TEM). These measurements were then related to selected area diffraction (SAD) patterns to verify either inte…
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InAs nanowires with Al$_x$In$_{1-x}$P or Al$x$In$_{1-x}$As shells were grown on GaAs substrates by the Au-assisted vapour-liquid-solid (VLS) method in a gas source molecular beam epitaxy (GS-MBE) system. Core diameters and shell thicknesses were measured by transmission electron microscopy (TEM). These measurements were then related to selected area diffraction (SAD) patterns to verify either interface coherency or relaxation through misfit dislocations. A theoretical strain model is presented to determine the critical shell thickness for given core diameters. Zincblende stiffness parameters are transformed to their wurtzite counterparts via a well known tensor transformation. An energy criterion is then given to determine the shell thickness at which coherency is lost and dislocations become favourable.
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Submitted 19 September, 2012;
originally announced September 2012.
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Trapped charge dynamics in InAs nanowires
Authors:
Gregory W. Holloway,
Yipu Song,
Chris M. Haapamaki,
Ray R. LaPierre,
Jonathan Baugh
Abstract:
We study random telegraph noise in the conductance of InAs nanowire field-effect transistors due to single electron trap** in defects. The electron capture and emission times are measured as functions of temperature and gate voltage for individual traps, and are consistent with traps residing in the few-nanometer-thick native oxide, with a Coulomb barrier to trap**. These results suggest that…
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We study random telegraph noise in the conductance of InAs nanowire field-effect transistors due to single electron trap** in defects. The electron capture and emission times are measured as functions of temperature and gate voltage for individual traps, and are consistent with traps residing in the few-nanometer-thick native oxide, with a Coulomb barrier to trap**. These results suggest that oxide removal from the nanowire surface, with proper passivation to prevent regrowth, should lead to the reduction or elimination of random telegraph noise, an important obstacle for sensitive experiments at the single electron level.
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Submitted 11 October, 2012; v1 submitted 14 September, 2012;
originally announced September 2012.
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Electron Transport in InAs-InAlAs Core-Shell Nanowires
Authors:
Gregory W. Holloway,
Yipu Song,
Chris M. Haapamaki,
Ray R. LaPierre,
Jonathan Baugh
Abstract:
Evidence is given for the effectiveness of InAs surface passivation by the growth of an epitaxial InAlAs shell. The electron mobility is measured as a function of temperature for both core-shell and unpassivated nanowires, with the core-shell nanowires showing a monotonic increase in mobility as temperature is lowered, in contrast to a turnover in mobility seen for the unpassivated nanowires. We a…
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Evidence is given for the effectiveness of InAs surface passivation by the growth of an epitaxial InAlAs shell. The electron mobility is measured as a function of temperature for both core-shell and unpassivated nanowires, with the core-shell nanowires showing a monotonic increase in mobility as temperature is lowered, in contrast to a turnover in mobility seen for the unpassivated nanowires. We argue that this signifies a reduction in low temperature ionized impurity scattering for the passivated nanowires, implying a reduction in surface states.
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Submitted 10 September, 2014; v1 submitted 12 September, 2012;
originally announced September 2012.
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Structural Investigation of InAs-AlInAs and InAs-AlInP Core-Shell Nanowires
Authors:
C. M. Haapamaki,
J. Baugh,
R. R. LaPierre
Abstract:
InAs nanowires were grown on GaAs substrates by the Au-assisted vapour-liquid-solid (VLS) method in a gas source molecular beam epitaxy (GS-MBE) system. Passivation of the InAs nanowires using InP shells proved difficult due to the tendency for the formation of axial rather than core-shell structures. To circumvent this issue, Al$_x$In$_{1-x}$As or Al$_x$In$_{1-x}$P shells with nominal Al composit…
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InAs nanowires were grown on GaAs substrates by the Au-assisted vapour-liquid-solid (VLS) method in a gas source molecular beam epitaxy (GS-MBE) system. Passivation of the InAs nanowires using InP shells proved difficult due to the tendency for the formation of axial rather than core-shell structures. To circumvent this issue, Al$_x$In$_{1-x}$As or Al$_x$In$_{1-x}$P shells with nominal Al composition fraction of x = 0.20, 0.36, or 0.53 were grown by direct vapour-solid deposition on the sidewalls of the InAs nanowires. Characterization by transmission electron microscopy revealed that the addition of Al in the shell resulted in a remarkable transition from the VLS to the vapour-solid growth mode with uniform shell thickness along the nanowire length. Possible mechanisms for this transition include reduced adatom diffusion, a phase change of the Au seed particle and surfactant effects. The InAs-AlInP core-shell nanowires exhibited misfit dislocations, while the InAs-AlInAs nanowires with lower strain appeared to be free of defects.
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Submitted 30 November, 2011;
originally announced November 2011.
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Growth and characterization of GaAs nanowires on carbon nanotubes composite films: toward flexible nanodevices
Authors:
P. K. Mohseni,
G. Lawson,
C. Couteau,
G. Weihs,
A. Adronov,
R. R. LaPierre
Abstract:
Poly(ethylene imine) functionalized carbon nanotube thin films, prepared using the vacuum filtration method, were decorated with Au nanoparticles by in situ reduction of HAuCl4 under mild conditions. These Au nanoparticles were subsequently employed for the growth of GaAs nanowires (NWs) by the vapor-liquid-solid process in a gas source molecular beam epitaxy system. The process resulted in the…
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Poly(ethylene imine) functionalized carbon nanotube thin films, prepared using the vacuum filtration method, were decorated with Au nanoparticles by in situ reduction of HAuCl4 under mild conditions. These Au nanoparticles were subsequently employed for the growth of GaAs nanowires (NWs) by the vapor-liquid-solid process in a gas source molecular beam epitaxy system. The process resulted in the dense growth of GaAs NWs across the entire surface of the single-walled nanotube (SWNT) films. The NWs, which were orientated in a variety of angles with respect to the SWNT films, ranged in diameter between 20 to 200 nm, with heights up to 2.5 um. Transmission electron microscopy analysis of the NW-SWNT interface indicated that NW growth was initiated upon the surface of the nanotube composite films. Photoluminescence characterization of a single NW specimen showed high optical quality. Rectifying asymmetric current-voltage behavior was observed from contacted NW ensembles and attributed to the core-shell pn-junction within the NWs. Potential applications of such novel hybrid architectures include flexible solar cells, displays, and sensors.
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Submitted 15 December, 2008;
originally announced December 2008.
