Condensed Matter > Mesoscale and Nanoscale Physics
[Submitted on 14 Sep 2012 (v1), last revised 11 Oct 2012 (this version, v2)]
Title:Trapped charge dynamics in InAs nanowires
View PDFAbstract:We study random telegraph noise in the conductance of InAs nanowire field-effect transistors due to single electron trap** in defects. The electron capture and emission times are measured as functions of temperature and gate voltage for individual traps, and are consistent with traps residing in the few-nanometer-thick native oxide, with a Coulomb barrier to trap**. These results suggest that oxide removal from the nanowire surface, with proper passivation to prevent regrowth, should lead to the reduction or elimination of random telegraph noise, an important obstacle for sensitive experiments at the single electron level.
Submission history
From: Jonathan Baugh [view email][v1] Fri, 14 Sep 2012 15:58:26 UTC (3,375 KB)
[v2] Thu, 11 Oct 2012 19:23:40 UTC (2,702 KB)
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