Showing 1–50 of 123 results for author: Hamilton, A R

Quantum magnetic oscillations in the absence of closed electron trajectories

Authors: Z. E. Krix, O. A. Tkachenko, V. A. Tkachenko, D. Q. Wang, O. Klochan, A. R. Hamilton, O. P. Sushkov

Abstract: Quantum magnetic oscillations in crystals are typically understood in terms of Bohr-Sommerfeld quantisation, the frequency of oscillation is given by the area of a closed electron trajectory. However, since the 1970s, oscillations have been observed with frequencies that do not correspond to closed electron trajectories and this effect has remained not fully understood. Previous theory has focused… ▽ More Quantum magnetic oscillations in crystals are typically understood in terms of Bohr-Sommerfeld quantisation, the frequency of oscillation is given by the area of a closed electron trajectory. However, since the 1970s, oscillations have been observed with frequencies that do not correspond to closed electron trajectories and this effect has remained not fully understood. Previous theory has focused on explaining the effect using various kinetic mechanisms, however, frequencies without a closed electron orbit have been observed in equilibrium and so a kinetic mechanism cannot be the entire story. In this work we develop a theory which explains these frequencies in equilibrium and can thus be used to understand measurements of both Shubnikov-de Haas and de Haas-van Alphen oscillations. We show, analytically, that these frequencies arise due to multi-electron correlations. We then extend our theory to explain a recent experiment on artificial crystals in GaAs two-dimensional electron gases, which revealed for the first time magnetic oscillations having frequencies that are half of those previously observed. We show that the half-frequencies arise in equilibrium from single-particle dynamics with account of impurities. Our analytic results are reinforced by exact numerics, which we also use clarify prior works on the kinetic regime. △ Less

Submitted 6 April, 2024; originally announced April 2024.

Comments: 15 pages, 10 figures

Lateral 2D superlattices in GaAs heterostructures with independent control of carrier density and modulation potential

Authors: D. Q. Wang, D. Reuter, A. D. Wieck, A. R. Hamilton, O. Klochan

Abstract: We present a new double-layer design for 2D surface superlattice systems in GaAs-AlGaAs heterostructures. Unlike previous studies, our device (1) uses an in-situ gate, which allows very short period superlattice in high mobility, shallow heterostructures; (2) enables independent control of the carrier density and the superlattice modulation potential amplitude over a wide range. We characterise th… ▽ More We present a new double-layer design for 2D surface superlattice systems in GaAs-AlGaAs heterostructures. Unlike previous studies, our device (1) uses an in-situ gate, which allows very short period superlattice in high mobility, shallow heterostructures; (2) enables independent control of the carrier density and the superlattice modulation potential amplitude over a wide range. We characterise this device design using low-temperature magneto-transport measurements and show that the fabrication process caused minimal damage to the system. We demonstrate the tuning of potential modulation from weak (much smaller than Fermi energy) to strong (larger than the Fermi energy) regimes. △ Less

Submitted 11 March, 2024; originally announced March 2024.

Comments: 4 pages, 3 figures

Formation of artificial Fermi surfaces with a triangular superlattice on a conventional two dimensional electron gas

Authors: Daisy Q. Wang, Zeb Krix, Oleg P. Sushkov, Ian Farrer, David A. Ritchie, Alexander R. Hamilton, Oleh Klochan

Abstract: In nearly free electron theory the imposition of a periodic electrostatic potential on free electrons creates the bandstructure of a material, determined by the crystal lattice spacing and geometry. Imposing an artificially designed potential to the electrons confined in a GaAs quantum well makes it possible to engineer synthetic two-dimensional band structures, with electronic properties differen… ▽ More In nearly free electron theory the imposition of a periodic electrostatic potential on free electrons creates the bandstructure of a material, determined by the crystal lattice spacing and geometry. Imposing an artificially designed potential to the electrons confined in a GaAs quantum well makes it possible to engineer synthetic two-dimensional band structures, with electronic properties different from those in the host semiconductor. Here we report the fabrication and study of a tuneable triangular artificial lattice on a GaAs/AlGaAs heterostructure where it is possible to transform from the original GaAs bandstructure and Fermi surface to a new bandstructure with multiple artificial Fermi surfaces simply by altering a gate bias. For weak electrostatic potential modulation magnetotransport measurements reveal quantum oscillations from the GaAs two-dimensional Fermi surface, and classical oscillations due to these electrons scattering from the artificial lattice. Increasing the strength of the modulation reveals new quantum oscillations due to the formation of multiple artificial Fermi surfaces, and ultimately to new classical oscillations of the electrons from the artificial Fermi surface scattering from the superlattice modulation. These results show that low disorder gate-tuneable lateral superlattices can be used to form artificial two dimensional crystals with designer electronic properties. △ Less

Submitted 11 March, 2024; originally announced March 2024.

Comments: 19 pages, 6 figures

Tuning the bandstructure of electrons in a two-dimensional artificial electrostatic crystal in GaAs quantum wells

Authors: Daisy Q. Wang, Zeb Krix, Olga A. Tkachenko, Vitaly A. Tkachenko, Chong Chen, Ian Farrer, David A. Ritchie, Oleg P. Sushkov, Alexander R. Hamilton, Oleh Klochan

Abstract: The electronic properties of solids are determined by the crystal structure and interactions between electrons, giving rise to a variety of collective phenomena including superconductivity, strange metals and correlated insulators. The mechanisms underpinning many of these collective phenomena remain unknown, driving interest in creating artificial crystals which replicate the system of interest w… ▽ More The electronic properties of solids are determined by the crystal structure and interactions between electrons, giving rise to a variety of collective phenomena including superconductivity, strange metals and correlated insulators. The mechanisms underpinning many of these collective phenomena remain unknown, driving interest in creating artificial crystals which replicate the system of interest while allowing precise control of key parameters. Cold atoms trapped in optical lattices provide great flexibility and tunability [1, 2], but cannot replicate the long range Coulomb interactions and long range hop** that drive collective phenomena in real crystals. Solid state approaches support long range hop** and interactions, but previous attempts with laterally patterned semiconductor systems were not able to create tunable low disorder artificial crystals, while approaches based on Moire superlattices in twisted two-dimensional (2D) materials [3, 4] have limited tunability and control of lattice geometry. Here we demonstrate the formation of highly tunable artificial crystals by superimposing a periodic electrostatic potential on the 2D electron gas in an ultrashallow (25 nm deep) GaAs quantum well. The 100 nm period artificial crystal is identified by the formation of a new bandstructure, different from the original cubic crystal and unique to the artificial triangular lattice: transport measurements show the Hall coefficient changing sign as the chemical potential sweeps through the artificial bands. Uniquely, the artificial bandstructure can be continuously tuned from parabolic free-electron bands into linear graphene-like and flat kagome-like bands in a single device. This approach allows the formation arbitrary geometry 2D artificial crystals, opening a new route to studying collective quantum states. △ Less

Submitted 20 February, 2024; originally announced February 2024.

Comments: 30 pages, 11 figures

A singlet-triplet hole-spin qubit in MOS silicon

Authors: S. D. Liles, D. J. Halverson, Z. Wang, A. Shamim, R. S. Eggli, I. K. **, J. Hillier, K. Kumar, I. Vorreiter, M. Rendell, J. H. Huang, C. C. Escott, F. E. Hudson, W. H. Lim, D. Culcer, A. S. Dzurak, A. R. Hamilton

Abstract: Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling. The spin-orbit coupling produces complex hole-spin dynamics, providing opportunities to further optimize spin qubits. Here, we demonstrate a singlet-triplet qubit using hole states in a planar metal-oxide-semiconductor double quantum dot. We observe rapid qubit control with sing… ▽ More Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling. The spin-orbit coupling produces complex hole-spin dynamics, providing opportunities to further optimize spin qubits. Here, we demonstrate a singlet-triplet qubit using hole states in a planar metal-oxide-semiconductor double quantum dot. We observe rapid qubit control with singlet-triplet oscillations up to 400 MHz. The qubit exhibits promising coherence, with a maximum dephasing time of 600 ns, which is enhanced to 1.3 us using refocusing techniques. We investigate the magnetic field anisotropy of the eigenstates, and determine a magnetic field orientation to improve the qubit initialisation fidelity. These results present a step forward for spin qubit technology, by implementing a high quality singlet-triplet hole-spin qubit in planar architecture suitable for scaling up to 2D arrays of coupled qubits. △ Less

Submitted 14 October, 2023; originally announced October 2023.

Probing Fermi surface parity with spin resolved transverse magnetic focussing

Authors: M. J. Rendell, S. D. Liles, S. Bladwell, A. Srinivasan, O. Klochan, I. Farrer, D. A. Ritchie, O. P. Sushkov, A. R. Hamilton

Abstract: Measurements of the Fermi surface are a fundamental technique for determining the electrical and magnetic properties of solids. In 2D systems, the area and diameter of the Fermi surface is typically measured using Shubnikov-de Haas oscillations and commensurability oscillations respectively. However, these techniques are unable to detect changes in the parity of the Fermi surface (i.e. when +k… ▽ More Measurements of the Fermi surface are a fundamental technique for determining the electrical and magnetic properties of solids. In 2D systems, the area and diameter of the Fermi surface is typically measured using Shubnikov-de Haas oscillations and commensurability oscillations respectively. However, these techniques are unable to detect changes in the parity of the Fermi surface (i.e. when +k $\neq$ -k). Here, we show that transverse magnetic focussing can be used to detect such changes, because focussing only measures a well defined section of the Fermi surface and does not average over +k and -k. Furthermore, our results show that focussing is an order of magnitude more sensitive to changes in the Fermi surface than other 2D techniques, and could be used to investigate similar Fermi surface changes in other 2D systems. △ Less

Submitted 7 March, 2024; v1 submitted 6 October, 2023; originally announced October 2023.

Electrical operation of hole spin qubits in planar MOS silicon quantum dots

Authors: Zhanning Wang, Abhikbrata Sarkar, S. D. Liles, Andre Saraiva, A. S. Dzurak, A. R. Hamilton, Dimitrie Culcer

Abstract: Silicon hole quantum dots have been the subject of considerable attention thanks to their strong spin-orbit coupling enabling electrical control. The physics of silicon holes is qualitatively different from germanium holes and requires a separate theoretical description. In this work, we theoretically study the electrical control and coherence properties of silicon hole dots with different magneti… ▽ More Silicon hole quantum dots have been the subject of considerable attention thanks to their strong spin-orbit coupling enabling electrical control. The physics of silicon holes is qualitatively different from germanium holes and requires a separate theoretical description. In this work, we theoretically study the electrical control and coherence properties of silicon hole dots with different magnetic field orientations. We discuss possible experimental configurations to optimize the electric dipole spin resonance (EDSR) Rabi time, the phonon relaxation time, and the dephasing due to random telegraph noise. Our main findings are: (i) The in-plane $g$-factor is strongly influenced by the presence of the split-off band, as well as by any shear strain. The $g$-factor is a non-monotonic function of the top gate electric field, in agreement with recent experiments. This enables coherence sweet spots at specific values of the top gate field and specific magnetic field orientations. (ii) Even a small ellipticity (aspect ratios $\sim 1.2$) causes significant anisotropy in the in-plane $g$-factor, which can vary by $50\% - 100\%$ as the magnetic field is rotated in the plane. (iii) EDSR Rabi frequencies are comparable to Ge, and the ratio between the relaxation time and the EDSR Rabi time $\sim 10^5$. For an out-of-plane magnetic field the EDSR Rabi frequency is anisotropic with respect to the orientation of the driving electric field, varying by $\approx 20\%$ as the driving field is rotated in the plane. Our work aims to stimulate experiments by providing guidelines on optimizing configurations and geometries to achieve robust, fast and long-lived hole spin qubits in silicon. △ Less

Submitted 21 September, 2023; originally announced September 2023.

Comments: 22 Pages, 11 figures

Report number: PhysRevB.109.075427

Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field

Authors: Abhikbrata Sarkar, Zhanning Wang, Mathew Rendell, Nico W. Hendrickx, Menno Veldhorst, Giordano Scappucci, Mohammad Khalifa, Joe Salfi, Andre Saraiva, A. S. Dzurak, A. R. Hamilton, Dimitrie Culcer

Abstract: In this work we present a comprehensive theory of spin physics in planar Ge hole quantum dots in an in-plane magnetic field, where the orbital terms play a dominant role in qubit physics, and provide a brief comparison with experimental measurements of the angular dependence of electrically driven spin resonance. We focus the theoretical analysis on electrical spin operation, phonon-induced relaxa… ▽ More In this work we present a comprehensive theory of spin physics in planar Ge hole quantum dots in an in-plane magnetic field, where the orbital terms play a dominant role in qubit physics, and provide a brief comparison with experimental measurements of the angular dependence of electrically driven spin resonance. We focus the theoretical analysis on electrical spin operation, phonon-induced relaxation, and the existence of coherence sweet spots. We find that the choice of magnetic field orientation makes a substantial difference for the properties of hole spin qubits. Furthermore, although the Schrieffer-Wolff approximation can describe electron dipole spin resonance (EDSR), it does not capture the fundamental spin dynamics underlying qubit coherence. Specifically, we find that: (i) EDSR for in-plane magnetic fields varies non-linearly with the field strength and weaker than for perpendicular magnetic fields; (ii) The EDSR Rabi frequency is maximized when the a.c. electric field is aligned parallel to the magnetic field, and vanishes when the two are perpendicular; (iii) The Rabi ratio $T_1/T_π$, i.e. the number of EDSR gate operation per unit relaxation time, is expected to be as large as $5{\times}10^5$ at the magnetic fields used experimentally; (iv) The orbital magnetic field terms make the in-plane $g$-factor strongly anisotropic in a squeezed dot, in excellent agreement with experimental measurements; (v) The coherence sweet spots do not exist in an in-plane magnetic field, as the orbital magnetic field terms expose the qubit to all components of the defect electric field. These findings will provide a guideline for experiments to design ultrafast, highly coherent hole spin qubits in Ge. △ Less

Submitted 3 July, 2023; originally announced July 2023.

Journal ref: Physical Review B 108, 245301 (2023)

Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform

Authors: Ik Kyeong **, Krittika Kumar, Matthew J. Rendell, Jonathan Y. Huang, Chris C. Escott, Fay E. Hudson, Wee Han Lim, Andrew S. Dzurak, Alexander R. Hamilton, Scott D. Liles

Abstract: Holes in silicon quantum dots are receiving significant attention due to their potential as fast, tunable, and scalable qubits in semiconductor quantum circuits. Despite this, challenges remain in this material system including difficulties using charge sensing to determine the number of holes in a quantum dot, and in controlling the coupling between adjacent quantum dots. In this work, we address… ▽ More Holes in silicon quantum dots are receiving significant attention due to their potential as fast, tunable, and scalable qubits in semiconductor quantum circuits. Despite this, challenges remain in this material system including difficulties using charge sensing to determine the number of holes in a quantum dot, and in controlling the coupling between adjacent quantum dots. In this work, we address these problems by fabricating an ambipolar complementary metal-oxide-semiconductor (CMOS) device using multilayer palladium gates. The device consists of an electron charge sensor adjacent to a hole double quantum dot. We demonstrate control of the spin state via electric dipole spin resonance (EDSR). We achieve smooth control of the inter-dot coupling rate over two orders of magnitude and use the charge sensor to perform spin-to-charge conversion to measure the hole singlet-triplet relaxation time of 11 μs for a known hole occupation. These results provide a path towards improving the quality and controllability of hole spin-qubits. △ Less

Submitted 31 October, 2022; originally announced November 2022.

Journal ref: Nano Lett. 2023, 23, 4, 1261-1266

Spin polarisation and spin dependent scattering of holes in transverse magnetic focussing

Authors: M. J. Rendell, S. D. Liles, A. Srinivasan, O. Klochan, I. Farrer, D. A. Ritchie, A. R. Hamilton

Abstract: In 2D systems with a spin-orbit interaction, magnetic focussing can be used to create a spatial separation of particles with different spin. Here we measure hole magnetic focussing for two different magnitudes of the Rashba spin-orbit interaction. We find that when the Rashba spin-orbit magnitude is large there is significant attenuation of one of the focussing peaks, which is conventionally assoc… ▽ More In 2D systems with a spin-orbit interaction, magnetic focussing can be used to create a spatial separation of particles with different spin. Here we measure hole magnetic focussing for two different magnitudes of the Rashba spin-orbit interaction. We find that when the Rashba spin-orbit magnitude is large there is significant attenuation of one of the focussing peaks, which is conventionally associated with a change in the spin polarisation. We instead show that in hole systems with a $k^3$ spin-orbit interaction, this peak suppression is due to a change in the scattering of one spin state, not a change in spin polarisation. We also show that the change in scattering length extracted from magnetic focussing is consistent with results obtained from measurements of Shubnikov-de Haas oscillations. This result suggests that scattering must be considered when relating focussing peak amplitude to spin polarisation in hole systems △ Less

Submitted 7 October, 2022; originally announced October 2022.

Phase transformation-induced superconducting aluminium-silicon alloy rings

Authors: B. C. Johnson, M. Stuiber, D. L. Creedon, A. Berhane, L. H. Willems van Beveren, S. Rubanov, J. H. Cole, V. Mourik, A. R. Hamilton, T. L. Duty, J. C. McCallum

Abstract: The development of a materials platform that exhibits both superconducting and semiconducting properties is an important endeavour for a range of emerging quantum technologies. We investigate the formation of superconductivity in nanowires fabricated with silicon-on-insulator (SOI). Aluminium from deposited contact electrodes is found to interdiffuses with the Si nanowire structures to form an Al-… ▽ More The development of a materials platform that exhibits both superconducting and semiconducting properties is an important endeavour for a range of emerging quantum technologies. We investigate the formation of superconductivity in nanowires fabricated with silicon-on-insulator (SOI). Aluminium from deposited contact electrodes is found to interdiffuses with the Si nanowire structures to form an Al-Si alloy along the entire length of the predefined nanowire device over micron length scales at temperatures well below that of the Al-Si eutectic. The resultant transformed nanowire structures are layered in geometry with a continuous Al-Si alloy wire sitting on the buried oxide of the SOI and a residual Si cap sitting on top of the wire. The phase transformed material is conformal with any predefined device patterns and the resultant structures are exceptionally smooth-walled compared to similar nanowire devices formed by silicidation processes. The superconducting properties of a mesoscopic AlSi ring formed on a SOI platform are investigated. Low temperature magnetoresistance oscillations, quantized in units of the fluxoid, h/2e, are observed. △ Less

Submitted 12 July, 2022; originally announced July 2022.

Comments: 11 pages, 9 figures

P-type Ohmic contact to monolayer WSe2 field-effect transistors using high electron affinity amorphous MoO3

Authors: Yi-Hsun Chen, Kaijian Xing, Song Liu, Luke Holtzman, Daniel L. Creedon, Jeffrey C. McCallum, Kenji Watanabe, Takashi Taniguchi, Katayun Barmak, James Hone, Alexander R. Hamilton, Shao-Yu Chen, Michael S. Fuhrer

Abstract: 1 School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia 2 Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia 3 Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States 4 Department of Applied Physics and Applied Mathemat… ▽ More 1 School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia 2 Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia 3 Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States 4 Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States 5 School of Physics, the University of Melbourne, Melbourne, VIC 3010, Australia 6 Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan 7 International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan 8 School of Physics, University of New South Wales, 2052 Sydney, Australia 9 Center of Condensed Matter Sciences and Center of Atomic Initiative for New Material, National Taiwan University, Taipei 106, Taiwan 10 Monash Centre for Atomically Thin Materials, Monash University, Clayton, 3800, VIC, Australia △ Less

Submitted 22 June, 2022; originally announced June 2022.

Increased Phase Coherence Length in a Porous Topological Insulator

Authors: Alex Nguyen, Golrokh Akhgar, David L. Cortie, Abdulhakim Bake, Zeljko Pastuovic, Weiyao Zhao, Chang Liu, Yi-Hsun Chen, Kiyonori Suzuki, Michael S. Fuhrer, Dimitrie Culcer, Alexander R. Hamilton, Mark T. Edmonds, Julie Karel

Abstract: The surface area of Bi2Te3 thin films was increased by introducing nanoscale porosity. Temperature dependent resistivity and magnetotransport measurements were conducted both on as-grown and porous samples (23 and 70 nm). The longitudinal resistivity of the porous samples became more metallic, indicating the increased surface area resulted in transport that was more surface-like. Weak antilocaliza… ▽ More The surface area of Bi2Te3 thin films was increased by introducing nanoscale porosity. Temperature dependent resistivity and magnetotransport measurements were conducted both on as-grown and porous samples (23 and 70 nm). The longitudinal resistivity of the porous samples became more metallic, indicating the increased surface area resulted in transport that was more surface-like. Weak antilocalization (WAL) was present in all samples, and remarkably the phase coherence length doubled in the porous samples. This increase is likely due to the large Fermi velocity of the Dirac surface states. Our results show that the introduction of nanoporosity does not destroy the topological surface states but rather enhances them, making these nanostructured materials promising for low energy electronics, spintronics and thermoelectrics. △ Less

Submitted 21 May, 2022; originally announced May 2022.

Chester supersolid of spatially indirect excitons in double-layer semiconductor heterostructures

Authors: Sara Conti, Andrea Perali, Alexander R. Hamilton, Milorad V. Milosevic, Francois M. Peeters, David Neilson

Abstract: A supersolid, a counter-intuitive quantum state in which a rigid lattice of particles flows without resistance, has to date not been unambiguously realised. Here we reveal a supersolid ground state of excitons in a double-layer semiconductor heterostructure over a wide range of layer separations outside the focus of recent experiments. This supersolid conforms to the original Chester supersolid wi… ▽ More A supersolid, a counter-intuitive quantum state in which a rigid lattice of particles flows without resistance, has to date not been unambiguously realised. Here we reveal a supersolid ground state of excitons in a double-layer semiconductor heterostructure over a wide range of layer separations outside the focus of recent experiments. This supersolid conforms to the original Chester supersolid with one exciton per supersolid site, as distinct from the alternative version reported in cold-atom systems of a periodic modulation of the superfluid density. We provide the phase diagram augmented by the supersolid. This new phase appears at layer separations much smaller than the predicted exciton normal solid, and it persists up to a solid--solid transition where the quantum phase coherence collapses. The ranges of layer separations and exciton densities in our phase diagram are well within reach of the current experimental capabilities. △ Less

Submitted 13 May, 2022; originally announced May 2022.

Gate voltage dependent Rashba spin splitting in hole transverse magnetic focussing

Authors: M. J. Rendell, S. D. Liles, A. Srinivasan, O. Klochan, I. Farrer, D. A. Ritchie, A. R. Hamilton

Abstract: Magnetic focussing of charge carriers in two-dimensional systems provides a solid state version of a mass spectrometer. In the presence of a spin-orbit interaction, the first focussing peak splits into two spin dependent peaks, allowing focussing to be used to measure spin polarisation and the strength of the spin-orbit interaction. In hole systems, the k^3 dependence of the Rashba spin-orbit term… ▽ More Magnetic focussing of charge carriers in two-dimensional systems provides a solid state version of a mass spectrometer. In the presence of a spin-orbit interaction, the first focussing peak splits into two spin dependent peaks, allowing focussing to be used to measure spin polarisation and the strength of the spin-orbit interaction. In hole systems, the k^3 dependence of the Rashba spin-orbit term allows the spatial separation of spins to be changed in-situ using a voltage applied to an overall top gate. Here we demonstrate that this can be used to control the splitting of the magnetic focussing peaks. Additionally, we compare the focussing peak splitting to that predicted by Shubnikov-de Haas oscillations and k.p bandstructure calculations. We find that the focussing peak splitting is consistently larger than expected, suggesting further work is needed on understanding spin dependent magnetic focussing. △ Less

Submitted 3 April, 2022; originally announced April 2022.

A high-mobility hole bilayer in a germanium double quantum well

Authors: A. Tosato, B. M. Ferrari, A. Sammak, A. R. Hamilton, M. Veldhorst, M. Virgilio, G. Scappucci

Abstract: We design, fabricate, and study a hole bilayer in a strained germanium double quantum well. Magnetotransport characterisation of double quantum well field-effect transistors as a function of gate voltage reveals the population of two hole channels with a high combined mobility of 3.34$\times$10$^5$ cm$^2$/Vs and a low percolation density of 2.38$\times$10$^{10}$ cm$^{-2}$. We resolve the individua… ▽ More We design, fabricate, and study a hole bilayer in a strained germanium double quantum well. Magnetotransport characterisation of double quantum well field-effect transistors as a function of gate voltage reveals the population of two hole channels with a high combined mobility of 3.34$\times$10$^5$ cm$^2$/Vs and a low percolation density of 2.38$\times$10$^{10}$ cm$^{-2}$. We resolve the individual population of the channels from the interference patterns of the Landau fan diagram. At a density of 2.0$\times$10$^{11}$ cm$^{-2}$ the system is in resonance and we observe an anti-crossing of the first two bilayer subbands characterized by a symmetric-antisymmetric gap of $\sim$0.69 meV, in agreement with Schrödinger-Poisson simulations. △ Less

Submitted 18 January, 2022; originally announced January 2022.

Lightly-strained germanium quantum wells with hole mobility exceeding one million

Authors: M. Lodari, O. Kong, M. Rendell, A. Tosato, A. Sammak, M. Veldhorst, A. R. Hamilton, G. Scappucci

Abstract: We demonstrate that a lightly-strained germanium channel ($\varepsilon_{//}$ = -0.41%) in an undoped Ge/Si$_{0.1}$Ge$_{0.9}$ heterostructure field effect transistor supports a 2D hole gas with mobility in excess of 1$\times$10$^{6}$ cm$^{2}$/Vs and percolation density less than 5$\times$10$^{10}$ cm$^{-2}$. This low disorder 2D hole system shows tunable fractional quantum Hall effect at low densit… ▽ More We demonstrate that a lightly-strained germanium channel ($\varepsilon_{//}$ = -0.41%) in an undoped Ge/Si$_{0.1}$Ge$_{0.9}$ heterostructure field effect transistor supports a 2D hole gas with mobility in excess of 1$\times$10$^{6}$ cm$^{2}$/Vs and percolation density less than 5$\times$10$^{10}$ cm$^{-2}$. This low disorder 2D hole system shows tunable fractional quantum Hall effect at low density and low magnetic field. The low-disorder and small effective mass (0.068$m_e$) defines lightly-strained germanium as a basis to tune the strength of the spin-orbit coupling for fast and coherent quantum hardware. △ Less

Submitted 5 February, 2022; v1 submitted 22 December, 2021; originally announced December 2021.

Optimizing Topological Switching in Confined 2D-Xene Nanoribbons via Finite-Size Effects

Authors: Muhammad Nadeem, Chao Zhang, Dimitrie Culcer, Alex R. Hamilton, Michael S. Fuhrer, Xiaolin Wang

Abstract: In a blueprint for topological electronics, edge state transport in a topological insulator material can be controlled by employing a gate-induced topological quantum phase transition. Here, by studying the width dependence of electronic properties, it is inferred that zigzag-Xene nanoribbons are promising materials for topological electronics with a display of unique physical characteristics asso… ▽ More In a blueprint for topological electronics, edge state transport in a topological insulator material can be controlled by employing a gate-induced topological quantum phase transition. Here, by studying the width dependence of electronic properties, it is inferred that zigzag-Xene nanoribbons are promising materials for topological electronics with a display of unique physical characteristics associated with the intrinsic band topology and the finite-size effects on gate-induced topological switching. First, due to intertwining with intrinsic band topology-driven energy-zero modes in the pristine case, spin-filtered chiral edge states in zigzag-Xene nanoribbons remain gapless and protected against backward scattering even with finite inter-edge overlap** in ultra-narrow ribbons, i.e., a 2D quantum spin Hall material turns into a 1D topological metal. Second, mainly due to width- and momentum-dependent tunability of the gate-induced inter-edge coupling, the threshold-voltage required for switching between gapless and gapped edge states reduces as the width decreases, without any fundamental lower bound. Third, when the width of zigzag-Xene nanoribbons is smaller than a critical limit, topological switching between edge states can be attained without bulk bandgap closing and reopening. This is primarily due to the quantum confinement effect on the bulk band spectrum which increases the nontrivial bulk bandgap with decrease in width. The existence of such protected gapless edge states and reduction in threshold-voltage accompanied by enhancement in the bulk bandgap overturns the general wisdom of utilizing narrow-gap and wide channel materials for reducing the threshold-voltage in a standard field effect transistor analysis and paves the way toward low-voltage topological devices. △ Less

Submitted 6 March, 2022; v1 submitted 26 July, 2021; originally announced July 2021.

Comments: 14 pages, 6 figures

Journal ref: Applied Physics Reviews 9, 011411 (2022)

Geometric control of universal hydrodynamic flow in a two dimensional electron fluid

Authors: Aydın Cem Keser, Daisy Q. Wang, Oleh Klochan, Derek Y. H. Ho, Olga A. Tkachenko, Vitaly A. Tkachenko, Dimitrie Culcer, Shaffique Adam, Ian Farrer, David A. Ritchie, Oleg P. Sushkov, Alexander R. Hamilton

Abstract: Fluid dynamics is one of the cornerstones of modern physics and has recently found applications in the transport of electrons in solids. In most solids electron transport is dominated by extrinsic factors, such as sample geometry and scattering from impurities. However in the hydrodynamic regime Coulomb interactions transform the electron motion from independent particles to the collective motion… ▽ More Fluid dynamics is one of the cornerstones of modern physics and has recently found applications in the transport of electrons in solids. In most solids electron transport is dominated by extrinsic factors, such as sample geometry and scattering from impurities. However in the hydrodynamic regime Coulomb interactions transform the electron motion from independent particles to the collective motion of a viscous `electron fluid'. The fluid viscosity is an intrinsic property of the electron system, determined solely by the electron-electron interactions. Resolving the universal intrinsic viscosity is challenging, as it only affects the resistance through interactions with the sample boundaries, whose roughness is not only unknown but also varies from device to device. Here we eliminate all unknown parameters by fabricating samples with smooth sidewalls to achieve the perfect slip boundary condition, which has been elusive both in molecular fluids and electronic systems. We engineer the device geometry to create viscous dissipation and reveal the true intrinsic hydrodynamic properties of a 2D system. We observe a clear transition from ballistic to hydrodynamic electron motion, driven by both temperature and magnetic field. We directly measure the viscosity and electron-electron scattering lifetime (the Fermi quasiparticle lifetime) over a wide temperature range without fitting parameters, and show they have a strong dependence on electron density that cannot be explained by conventional theories based on the Random Phase Approximation. △ Less

Submitted 17 March, 2021; originally announced March 2021.

Journal ref: Phys. Rev. X 11, 031030 (2021)

Quantum Anomalous Hall Effect in Magnetic Doped Topological Insulators and Ferromagnetic Spin-Gapless Semiconductors -- A Perspective Review

Authors: Muhammad Nadeem, Alex R. Hamilton, Michael S. Fuhrer, Xiaolin Wang

Abstract: Quantum anomalous Hall effect, with a trademark of dissipationless chiral edge states for electronics/spintronics transport applications, can be realized in materials with large spin-orbit coupling and strong intrinsic magnetization. After Haldane seminal proposal, several models have been presented to control/enhance the spin-orbit coupling and intrinsic magnetic exchange interaction. After brief… ▽ More Quantum anomalous Hall effect, with a trademark of dissipationless chiral edge states for electronics/spintronics transport applications, can be realized in materials with large spin-orbit coupling and strong intrinsic magnetization. After Haldane seminal proposal, several models have been presented to control/enhance the spin-orbit coupling and intrinsic magnetic exchange interaction. After brief introduction of Haldane model for spineless fermions, following three fundamental quantum anomalous Hall models are discussed in this perspective review: (i) low-energy effective four band model for magnetic-doped topological insulator (Bi,Sb)2Te3 thin films, (ii) four band tight-binding model for graphene with magnetic adatoms, and (iii) two (three) band spinfull tight-binding model for ferromagnetic spin-gapless semiconductors with honeycomb (kagome) lattice where ground state is intrinsically ferromagnetic. These models cover two-dimensional Dirac materials hosting spinless, spinful and spin-degenerate Dirac points where various mass terms open a band gap and lead to quantum anomalous Hall effect. With emphasize on the topological phase transition driven by ferromagnetic exchange interaction and its interplay with spin-orbit-coupling, we discuss various symmetry constraints on the nature of mass term and the materialization of these models. We hope this study will shed light on the fundamental theoretical perspectives of quantum anomalous Hall materials. △ Less

Submitted 22 December, 2020; originally announced January 2021.

Journal ref: Small,16(42),1904322 (2020)

Effects of biased and unbiased illuminations on dopant-free GaAs/AlGaAs 2DEGs

Authors: A. Shetty, F. Sfigakis, W. Y. Mak, K. Das Gupta, B. Buonacorsi, M. C. Tam, H. S. Kim, I. Farrer, A. F. Croxall, H. E. Beere, A. R. Hamilton, M. Pepper, D. G. Austing, S. A. Studenikin, A. Sachrajda, M. E. Reimer, Z. R. Wasilewski, D. A. Ritchie, J. Baugh

Abstract: Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs located more than 70 nm away from the surface result in a gain in mobility at a given electron density, primarily driven by the reduction of background i… ▽ More Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs located more than 70 nm away from the surface result in a gain in mobility at a given electron density, primarily driven by the reduction of background impurities. In 2DEGs closer to the surface, unbiased illuminations result in a mobility loss, driven by an increase in surface charge density. Biased illuminations performed with positive applied gate voltages result in a mobility gain, whereas those performed with negative applied voltages result in a mobility loss. The magnitude of the mobility gain (loss) weakens with 2DEG depth, and is likely driven by a reduction (increase) in surface charge density. Remarkably, this mobility gain/loss is fully reversible by performing another biased illumination with the appropriate gate voltage, provided both n-type and p-type ohmic contacts are present. Experimental results are modeled with Boltzmann transport theory, and possible mechanisms are discussed. △ Less

Submitted 21 December, 2021; v1 submitted 28 December, 2020; originally announced December 2020.

Comments: 18 pages, 13 figures; one paragraph rephrased on page 8

Electron-hole superfluidity in strained Si/Ge type II heterojunctions

Authors: Sara Conti, Samira Saberi Pouya, Andrea Perali, Michele Virgilio, Francois M. Peeters, Alexander R. Hamilton, Giordano Scappucci, David Neilson

Abstract: Excitons are promising candidates for generating superfluidity and Bose-Einstein Condensation (BEC) in solid state devices, but an enabling material platform with in-built bandstructure advantages and scaling compatibility with industrial semiconductor technology is lacking. Here we predict that spatially indirect excitons in a lattice-matched strained Si/Ge bilayer embedded into a germanium-rich… ▽ More Excitons are promising candidates for generating superfluidity and Bose-Einstein Condensation (BEC) in solid state devices, but an enabling material platform with in-built bandstructure advantages and scaling compatibility with industrial semiconductor technology is lacking. Here we predict that spatially indirect excitons in a lattice-matched strained Si/Ge bilayer embedded into a germanium-rich SiGe crystal, would lead to observable mass-imbalanced electron-hole superfluidity and BEC. Holes would be confined in a compressively strained Ge quantum well and electrons in a lattice-matched tensile strained Si quantum well. We envision a device architecture that does not require an insulating barrier at the Si/Ge interface, since this interface offers a type II band alignment. Thus the electrons and holes can be kept very close but strictly separate, strengthening the electron-hole pairing attraction while preventing fast electron-hole recombination. The band alignment also allows a one-step procedure for making independent contacts to the electron and hole layers, overcoming a significant obstacle to device fabrication. We predict superfluidity at experimentally accessible temperatures of a few Kelvin and carrier densities up to $\sim 6\times 10^{10}$ cm$^{-2}$, while the large imbalance of the electron and hole effective masses can lead to exotic superfluid phases. △ Less

Submitted 14 December, 2020; v1 submitted 10 December, 2020; originally announced December 2020.

Electrical control of the $g$-tensor of a single hole in a silicon MOS quantum dot

Authors: S. D. Liles, F. Martins, D. S. Miserev, A. A. Kiselev, I. D. Thorvaldson, M. J. Rendell, I. K. **, F. E. Hudson, M. Veldhorst, K. M. Itoh, O. P. Sushkov, T. D. Ladd, A. S. Dzurak, A. R. Hamilton

Abstract: Single holes confined in semiconductor quantum dots are a promising platform for spin qubit technology, due to the electrical tunability of the $g$-factor of holes. However, the underlying mechanisms that enable electric spin control remain unclear due to the complexity of hole spin states. Here, we study the underlying hole spin physics of the first hole in a silicon planar MOS quantum dot. We sh… ▽ More Single holes confined in semiconductor quantum dots are a promising platform for spin qubit technology, due to the electrical tunability of the $g$-factor of holes. However, the underlying mechanisms that enable electric spin control remain unclear due to the complexity of hole spin states. Here, we study the underlying hole spin physics of the first hole in a silicon planar MOS quantum dot. We show that non-uniform electrode-induced strain produces nanometre-scale variations in the HH-LH splitting. Importantly, we find that this \RR{non-uniform strain causes} the HH-LH splitting to vary by up to 50\% across the active region of the quantum dot. We show that local electric fields can be used to displace the hole relative to the non-uniform strain profile, allowing a new mechanism for electric modulation of the hole g-tensor. Using this mechanism we demonstrate tuning of the hole $g$-factor by up to 500\%. In addition, we observe a \RR{potential} sweet spot where d$g_{(1\overline{1}0)}$/d$V$ = 0, offering a configuration to suppress spin decoherence caused by electrical noise. These results open a path towards a previously unexplored technology: engineering of \RR{non-uniform} strains to optimise spin-based devices. △ Less

Submitted 20 December, 2021; v1 submitted 9 December, 2020; originally announced December 2020.

Comments: 12 pages, 4 figures

Generating a topological anomalous Hall effect in a non-magnetic conductor

Authors: James H. Cullen, Pankaj Bhalla, Elizabeth Marcellina, Alexander R. Hamilton, Dimitrie Culcer

Abstract: The ordinary Hall effect is driven by the Lorentz force, while its anomalous counterpart occurs in ferromagnets. Here we show that the Berry curvature monopole of non-magnetic 2D spin-3/2 holes leads to a novel Hall effect linear in an applied in-plane magnetic field B_x. There is no Lorentz force hence no ordinary Hall effect, while all disorder contributions vanish to leading order in B_x. This… ▽ More The ordinary Hall effect is driven by the Lorentz force, while its anomalous counterpart occurs in ferromagnets. Here we show that the Berry curvature monopole of non-magnetic 2D spin-3/2 holes leads to a novel Hall effect linear in an applied in-plane magnetic field B_x. There is no Lorentz force hence no ordinary Hall effect, while all disorder contributions vanish to leading order in B_x. This intrinsic phenomenon, which we term the anomalous planar Hall effect (APHE), provides a non-quantized footprint of topological transport directly accessible in p-type semiconductors. △ Less

Submitted 18 November, 2020; originally announced November 2020.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 126, 256601 (2021)

Improving reproducibility of quantum devices with completely undoped architectures

Authors: A. Srinivasan, I. Farrer, D. A. Ritchie, A. R. Hamilton

Abstract: The reproducible operation of quantum electronic devices is a key requirement for future quantum information processing and spintronics applications. Traditionally quantum devices have been fabricated from modulation doped heterostructures, where there is an intrinsic lack of reproducibility due to the random potential from ionized donors. Here we show that we can greatly improve reproducibility o… ▽ More The reproducible operation of quantum electronic devices is a key requirement for future quantum information processing and spintronics applications. Traditionally quantum devices have been fabricated from modulation doped heterostructures, where there is an intrinsic lack of reproducibility due to the random potential from ionized donors. Here we show that we can greatly improve reproducibility over modulation doped devices by using a completely undoped architecture, with superior uniformity in the confinement potential and more consistent operating voltages for both electron and hole devices. Our results demonstrate that undoped heterostructures have significant advantages over modulation do** for reproducible manufacturing of quantum devices. △ Less

Submitted 8 November, 2020; originally announced November 2020.

Journal ref: Appl. Phys. Lett. 117, 183101 (2020)

Determination of the spin orientation of helical electrons in monolayer WTe2

Authors: Cheng Tan, Ming-Xun Deng, Feixiang Xiang, Guolin Zheng, Sultan Albarakati, Meri Algarni, James Partridge, Alex R. Hamilton, Rui-Qiang Wang, Lan Wang

Abstract: Monolayer WTe2 is predicted to be a quantum spin Hall insulator (QSHI) and electron transport along its edges has been experimentally observed. However, the 'smoking gun' of QSHI, spin momentum locking of the edge electrons, has not been experimentally demonstrated. We propose a model to establish the relationship between the anisotropic magnetoresistance (AMR) and spin orientation of the helical… ▽ More Monolayer WTe2 is predicted to be a quantum spin Hall insulator (QSHI) and electron transport along its edges has been experimentally observed. However, the 'smoking gun' of QSHI, spin momentum locking of the edge electrons, has not been experimentally demonstrated. We propose a model to establish the relationship between the anisotropic magnetoresistance (AMR) and spin orientation of the helical electrons in WTe2. Based on the predictions of the model, angular dependent magnetoresistance measurements were carried out. The experimental results fully supported the model and the spin orientation of the helical edge electrons was determined. Our results not only demonstrate that WTe2 is indeed a QSHI, but also suggest a convenient method to determine the spin orientation of other QSHIs. △ Less

Submitted 29 October, 2020; originally announced October 2020.

Comments: 32 pages, 11 figures

Anodic Oxidation of Epitaxial Superconductor-Semiconductor Hybrids

Authors: Asbjørn C. C. Drachmann, Rosa E. Diaz, Candice Thomas, Henri J. Suominen, Alexander M. Whiticar, Antonio Fornieri, Sergei Gronin, Tiantian Wang, Geoffrey C. Gardner, Alex R. Hamilton, Fabrizio Nichele, Michael J. Manfra, Charles M. Marcus

Abstract: We demonstrate a new fabrication process for hybrid semiconductor-superconductor heterostructures based on anodic oxidation (AO), allowing controlled thinning of epitaxial Al films. Structural and transport studies of oxidized epitaxial Al films grown on insulating GaAs substrates reveal spatial non-uniformity and enhanced critical temperature and magnetic fields. Oxidation of epitaxial Al on hybr… ▽ More We demonstrate a new fabrication process for hybrid semiconductor-superconductor heterostructures based on anodic oxidation (AO), allowing controlled thinning of epitaxial Al films. Structural and transport studies of oxidized epitaxial Al films grown on insulating GaAs substrates reveal spatial non-uniformity and enhanced critical temperature and magnetic fields. Oxidation of epitaxial Al on hybrid InAs heterostructures with a conducting quantum well show similarly enhanced superconducting properties transferred to the two-dimensional electron gas (2DEG) by proximity effect, with critical perpendicular magnetic fields up to 3.5 T. An insulating AlOx film, that passivates the heterostructure from exposure to air, is obtained by complete oxidation of the Al. It simultaneously removes the need to strip Al which damages the underlying semiconductor. AO passivation yielded 2DEG mobilities two times higher than similar devices with Al removed by wet etching. An AO-passivated Hall bar showed quantum Hall features emerging at a transverse field of 2.5 T, below the critical transverse field of thinned films, eventually allowing transparent coupling of quantum Hall effect and superconductivity. AO thinning and passivation are compatible with standard lithographic techniques, giving lateral resolution below <50 nm. We demonstrate local patterning of AO by realizing a semiconductor-based Josephson junction operating up to 0.3 T perpendicular. △ Less

Submitted 17 September, 2020; originally announced September 2020.

Report number: NBI QDEV 2020

Journal ref: Phys. Rev. Materials 5, 013805 (2021)

Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits

Authors: Zhanning Wang, Elizabeth Marcellina, A. R. Hamilton, James H. Cullen, Sven Rogge, Joe Salfi, Dimitrie Culcer

Abstract: Strong spin-orbit interactions make hole quantum dots central to the quest for electrical spin qubit manipulation enabling fast, low-power, scalable quantum computation. Yet it is important to establish to what extent spin-orbit coupling exposes qubits to electrical noise, facilitating decoherence. Here, taking Ge as an example, we show that group IV gate-defined hole spin qubits generically exhib… ▽ More Strong spin-orbit interactions make hole quantum dots central to the quest for electrical spin qubit manipulation enabling fast, low-power, scalable quantum computation. Yet it is important to establish to what extent spin-orbit coupling exposes qubits to electrical noise, facilitating decoherence. Here, taking Ge as an example, we show that group IV gate-defined hole spin qubits generically exhibit optimal operation points, defined by the top gate electric field, at which they are both fast and long-lived: the dephasing rate vanishes to first order in electric field noise along all directions in space, the electron dipole spin resonance strength is maximised, while relaxation is drastically reduced at small magnetic fields. The existence of optimal operation points is traced to group IV crystal symmetry and properties of the Rashba spin-orbit interaction unique to spin-3/2 systems. Our results overturn the conventional wisdom that fast operation implies reduced lifetimes, and suggest group IV hole spin qubits as ideal platforms for ultra-fast, highly coherent scalable quantum computing. △ Less

Submitted 7 April, 2021; v1 submitted 25 November, 2019; originally announced November 2019.

Comments: 32 pages, 4 figures

Journal ref: npj Quantum Information volume 7, Article number: 54 (2021)

Three-dimensional electron-hole superfluidity in a superlattice close to room temperature

Authors: M. Van der Donck, S. Conti, A. Perali, A. R. Hamilton, B. Partoens, F. M. Peeters, D. Neilson

Abstract: Although there is strong theoretical and experimental evidence for electron-hole superfluidity in separated sheets of electrons and holes at low $T$, extending superfluidity to high $T$ is limited by strong 2D fluctuations and Kosterlitz-Thouless effects. We show this limitation can be overcome using a superlattice of alternating electron- and hole-doped semiconductor monolayers. The superfluid tr… ▽ More Although there is strong theoretical and experimental evidence for electron-hole superfluidity in separated sheets of electrons and holes at low $T$, extending superfluidity to high $T$ is limited by strong 2D fluctuations and Kosterlitz-Thouless effects. We show this limitation can be overcome using a superlattice of alternating electron- and hole-doped semiconductor monolayers. The superfluid transition in a 3D superlattice is not topological, and for strong electron-hole pair coupling, the transition temperature $T_c$ can be at room temperature. As a quantitative illustration, we show $T_c$ can reach $270$ K for a superfluid in a realistic superlattice of transition metal dichalcogenide monolayers. △ Less

Submitted 4 November, 2019; originally announced November 2019.

Comments: 5 pages, 3 figures, supplementary material (3 pages) includes 1 table and 1 figure

Journal ref: Phys. Rev. B 102, 060503 (2020)

Experimental conditions for observation of electron-hole superfluidity in GaAs heterostructures

Authors: Samira Saberi-Pouya, Sara Conti, Andrea Perali, Andrew F. Croxall, Alexander R. Hamilton, Francois M. Peeters, David Neilson

Abstract: The experimental parameter ranges needed to generate superfluidity in optical and drag experiments in GaAs double quantum wells are determined, using a formalism that includes self-consistent screening of the Coulomb pairing interaction in the presence of the superfluid. The very different electron and hole masses in GaAs make this a particularly interesting system for superfluidity, with exotic s… ▽ More The experimental parameter ranges needed to generate superfluidity in optical and drag experiments in GaAs double quantum wells are determined, using a formalism that includes self-consistent screening of the Coulomb pairing interaction in the presence of the superfluid. The very different electron and hole masses in GaAs make this a particularly interesting system for superfluidity, with exotic superfluid phases predicted in the BCS-BEC crossover regime. We find that the density and temperature ranges for superfluidity cover the range for which optical experiments have observed indications of superfluidity, but that existing drag experiments lie outside the superfluid range. However we also show that for samples with low mobility with no macroscopically connected superfluidity, if the superfluidity survived in randomly distributed localized pockets, standard quantum capacitance measurements could detect these pockets. △ Less

Submitted 2 March, 2020; v1 submitted 15 October, 2019; originally announced October 2019.

Comments: 7 pages, 4 figures

Journal ref: Phys. Rev. B 101, 140501 (2020)

Non-linear spin filter for non-magnetic materials at zero magnetic field

Authors: E. Marcellina, A. Srinivasan, F. Nichele, P. Stano, D. A. Ritchie, I. Farrer, Dimitrie Culcer, A. R. Hamilton

Abstract: The ability to convert spin accumulation to charge currents is essential for applications in spintronics. In semiconductors, spin-to-charge conversion is typically achieved using the inverse spin Hall effect or using a large magnetic field. Here we demonstrate a general method that exploits the non-linear interactions between spin and charge currents to perform all-electrical, rapid and non-invasi… ▽ More The ability to convert spin accumulation to charge currents is essential for applications in spintronics. In semiconductors, spin-to-charge conversion is typically achieved using the inverse spin Hall effect or using a large magnetic field. Here we demonstrate a general method that exploits the non-linear interactions between spin and charge currents to perform all-electrical, rapid and non-invasive detection of spin accumulation without the need for a magnetic field. We demonstrate the operation of this technique with ballistic GaAs holes as a model system with strong spin-orbit coupling, in which a quantum point contact provides the non-linear energy filter. This approach is generally applicable to electron and hole systems with strong spin orbit coupling. △ Less

Submitted 22 October, 2020; v1 submitted 2 July, 2019; originally announced July 2019.

Journal ref: Phys. Rev. B 102, 140406 (2020)

Signatures of quantum mechanical Zeeman effect in classical transport due to topological properties of two-dimensional spin-3/2 holes

Authors: E. Marcellina, Pankaj Bhalla, A. R. Hamilton, Dimitrie Culcer

Abstract: The Zeeman interaction is a quantum mechanical effect that underpins spin-based quantum devices such as spin qubits. Typically, identification of the Zeeman interaction needs a large out-of-plane magnetic field coupled with ultralow temperatures, which limits the practicality of spin-based devices. However, in two-dimensional (2D) semiconductor holes, the strong spin-orbit interaction causes the Z… ▽ More The Zeeman interaction is a quantum mechanical effect that underpins spin-based quantum devices such as spin qubits. Typically, identification of the Zeeman interaction needs a large out-of-plane magnetic field coupled with ultralow temperatures, which limits the practicality of spin-based devices. However, in two-dimensional (2D) semiconductor holes, the strong spin-orbit interaction causes the Zeeman interaction to couple the spin, the magnetic field, and the momentum, and has terms with different winding numbers. In this work, we demonstrate a physical mechanism by which the Zeeman terms can be detected in classical transport. The effect we predict is very strong, and tunable by means of both the density and the in-plane magnetic field. It is a direct signature of the topological properties of the 2D hole system, and a manifestation in classical transport of an effect stemming from relativistic quantum mechanics. We discuss experimental observation and implications for quantum technologies. △ Less

Submitted 22 February, 2020; v1 submitted 27 June, 2019; originally announced June 2019.

Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 tri-layer heterostructures

Authors: Sultan Albarakati, Cheng Tan, Zhong-Jia Chen, James G. Partridge, Guolin Zheng, Lawrence Farrar, Edwin L. H. Mayes, Matthew R. Field, Changgu Lee, Yihao Wang, Yiming Xiong, Mingliang Tian, Feixiang Xiang, Alex R. Hamilton, Oleg A. Tretiakov, Dimitrie Culcer, Yu-Jun Zhao, Lan Wang

Abstract: Van der Waals (vdW) ferromagnetic materials are rapidly establishing themselves as effective building blocks for next generation spintronic devices. When layered with non-magnetic vdW materials, such as graphene and/or topological insulators, vdW heterostructures can be assembled (with no requirement for lattice matching) to provide otherwise unattainable device structures and functionalities. We… ▽ More Van der Waals (vdW) ferromagnetic materials are rapidly establishing themselves as effective building blocks for next generation spintronic devices. When layered with non-magnetic vdW materials, such as graphene and/or topological insulators, vdW heterostructures can be assembled (with no requirement for lattice matching) to provide otherwise unattainable device structures and functionalities. We report a hitherto rarely seen antisymmetric magnetoresistance (MR) effect in van der Waals heterostructured Fe3GeTe2/graphite/Fe3GeTe2 devices. Unlike conventional giant magnetoresistance (GMR) which is characterized by two resistance states, the MR in these vdW heterostructures features distinct high, intermediate and low resistance states. This unique characteristic is suggestive of underlying physical mechanisms that differ from those observed before. After theoretical calculations, the three resistance behavior was attributed to a spin momentum locking induced spin polarized current at the graphite/FGT interface. Our work reveals that ferromagnetic heterostructures assembled from vdW materials can exhibit substantially different properties to those exhibited by similar heterostructures grown in vacuum. Hence, it highlights the potential for new physics and new spintronic applications to be discovered using vdW heterostructures. △ Less

Submitted 25 April, 2019; v1 submitted 23 April, 2019; originally announced April 2019.

Comments: 35 pages (Accepted by Science Advances)

Journal ref: Science Advances, 05 Jul 2019: Vol. 5, no. 7, eaaw0409

Multiband Mechanism for the Sign Reversal of Coulomb Drag Observed in Double Bilayer Graphene Heterostructures

Authors: M. Zarenia, A. R. Hamilton, F. M. Peeters, D. Neilson

Abstract: Coupled 2D sheets of electrons and holes are predicted to support novel quantum phases. Two experiments of Coulomb drag in electron-hole (e-h) double bilayer graphene (DBLG) have reported an unexplained and puzzling sign reversal of the drag signal. However, we show that this effect is due to the multiband character of DBLG. Our multiband Fermi liquid theory produces excellent agreement and captur… ▽ More Coupled 2D sheets of electrons and holes are predicted to support novel quantum phases. Two experiments of Coulomb drag in electron-hole (e-h) double bilayer graphene (DBLG) have reported an unexplained and puzzling sign reversal of the drag signal. However, we show that this effect is due to the multiband character of DBLG. Our multiband Fermi liquid theory produces excellent agreement and captures the key features of the experimental drag resistance for all temperatures. This demonstrates the importance of multiband effects in DBLG: they have a strong effect not only on superfluidity, but also on the drag. △ Less

Submitted 27 June, 2018; originally announced June 2018.

Comments: 5 pages, 3 figures

Journal ref: Physical Review Letters (2018)

Theory of Hole-Spin Qubits in Strained Germanium Quantum Dots

Authors: L. A. Terrazos, E. Marcellina, Zhanning Wang, S. N. Coppersmith, Mark Friesen, A. R. Hamilton, Xuedong Hu, Belita Koiller, A. L. Saraiva, Dimitrie Culcer, Rodrigo B. Capaz

Abstract: We theoretically investigate the properties of holes in a Si$_{x}$Ge$_{1-x}$/Ge/ Si$_{x}$Ge$_{1-x}$ quantum well in a perpendicular magnetic field that make them advantageous as qubits, including a large ($>$100~meV) intrinsic splitting between the light and heavy hole bands, a very light ($\sim$0.05$\, m_0$) in-plane effective mass, consistent with higher mobilities and tunnel rates, and larger d… ▽ More We theoretically investigate the properties of holes in a Si$_{x}$Ge$_{1-x}$/Ge/ Si$_{x}$Ge$_{1-x}$ quantum well in a perpendicular magnetic field that make them advantageous as qubits, including a large ($>$100~meV) intrinsic splitting between the light and heavy hole bands, a very light ($\sim$0.05$\, m_0$) in-plane effective mass, consistent with higher mobilities and tunnel rates, and larger dot sizes that could ameliorate constraints on device fabrication. Compared to electrons in quantum dots, hole qubits do not suffer from the presence of nearby quantum levels (e.g., valley states) that can compete with spins as qubits. The strong spin-orbit coupling in Ge quantum wells may be harnessed to implement electric-dipole spin resonance, leading to gate times of several nanoseconds for single-qubit rotations. The microscopic mechanism of this spin-orbit coupling is discussed, along with its implications for quantum gates based on electric-dipole spin resonance, stressing the importance of coupling terms that arise from the underlying cubic crystal field. Our results provide a theoretical foundation for recent experimental advances in Ge hole-spin qubits. △ Less

Submitted 30 January, 2021; v1 submitted 27 March, 2018; originally announced March 2018.

Comments: 1 pages

Journal ref: Phys. Rev. B 103, 125201 (2021)

Spin filling and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot

Authors: S. D. Liles, R. Li, C. H. Yang, F. E. Hudson, M. Veldhorst, A. S. Dzurak, A. R. Hamilton

Abstract: The spin states of electrons confined in semiconductor quantum dots form a promising platform for quantum computation. Recent studies of silicon CMOS qubits have shown coherent manipulation of electron spin states with extremely high fidelity. However, manipulation of single electron spins requires large oscillatory magnetic fields to be generated on-chip, making it difficult to address individual… ▽ More The spin states of electrons confined in semiconductor quantum dots form a promising platform for quantum computation. Recent studies of silicon CMOS qubits have shown coherent manipulation of electron spin states with extremely high fidelity. However, manipulation of single electron spins requires large oscillatory magnetic fields to be generated on-chip, making it difficult to address individual qubits when scaling up to multi-qubit devices. The spin-orbit interaction allows spin states to be controlled with electric fields, which act locally and are easier to generate. While the spin-orbit interaction is weak for electrons in silicon, valence band holes have an inherently strong spin-orbit interaction. However, creating silicon quantum dots in which a single hole can be localised, in an architecture that is suitable for scale-up to a large number of qubits, is a challenge. Here we report a silicon quantum dot, with an integrated charge sensor, that can be operated down to the last hole. We map the spin states and orbital structure of the first six holes, and show they follow the Fock-Darwin spectrum. We also find that hole-hole interactions are extremely strong, reducing the two-hole singlet-triplet splitting by 90% compared to the single particle level spacing of 3.5 meV. These results provide a route to single hole spin quantum bits in a planar silicon CMOS architecture. △ Less

Submitted 13 January, 2018; originally announced January 2018.

Comments: 7 pages, 3 figures

Journal ref: Nature Comms. 9, 3255 (2018)

Strong influence of spin-orbit coupling on magnetotransport in two-dimensional hole systems

Authors: Hong Liu, Elizabeth Marcellina, Alexander R. Hamilton, Dimitrie Culcer

Abstract: With a view to electrical spin manipulation and quantum computing applications, recent significant attention has been devoted to semiconductor hole systems, which have very strong spin-orbit interactions. However, experimentally measuring, identifying, and quantifying spin-orbit coupling effects in transport, such as electrically-induced spin polarizations and spin-Hall currents, are challenging.… ▽ More With a view to electrical spin manipulation and quantum computing applications, recent significant attention has been devoted to semiconductor hole systems, which have very strong spin-orbit interactions. However, experimentally measuring, identifying, and quantifying spin-orbit coupling effects in transport, such as electrically-induced spin polarizations and spin-Hall currents, are challenging. Here we show that the magnetotransport properties of two dimensional (2D) hole systems display strong signatures of the spin-orbit interaction. Specifically, the low-magnetic field Hall coefficient and longitudinal conductivity contain a contribution that is second order in the spin-orbit interaction coefficient and is non-linear in the carrier number density. We propose an appropriate experimental setup to probe these spin-orbit dependent magnetotransport properties, which will permit one to extract the spin-orbit coefficient directly from the magnetotransport. △ Less

Submitted 24 August, 2017; v1 submitted 23 August, 2017; originally announced August 2017.

Journal ref: Phys. Rev. Lett. 121, 087701 (2018)

Detection and control of spin-orbit interactions in a GaAs hole quantum point contact

Authors: A. Srinivasan, D. S. Miserev, K. L. Hudson, O. Klochan, K. Muraki, Y. Hirayama, D. Reuter, A. D. Wieck, O. P. Sushkov, A. R. Hamilton

Abstract: We investigate the relationship between the Zeeman interaction and the inversion asymmetry induced spin orbit interactions (Rashba and Dresselhaus SOIs) in GaAs hole quantum point contacts. The presence of a strong SOI results in crossing and anti-crossing of adjacent spin-split hole subbands in a magnetic field. We demonstrate theoretically and experimentally that the anti-crossing energy gap dep… ▽ More We investigate the relationship between the Zeeman interaction and the inversion asymmetry induced spin orbit interactions (Rashba and Dresselhaus SOIs) in GaAs hole quantum point contacts. The presence of a strong SOI results in crossing and anti-crossing of adjacent spin-split hole subbands in a magnetic field. We demonstrate theoretically and experimentally that the anti-crossing energy gap depends on the interplay between the SOI terms and the highly anisotropic hole g tensor, and that this interplay can be tuned by selecting the crystal axis along which the current and magnetic field are aligned. Our results constitute independent detection and control of the Dresselhaus and Rashba SOIs in hole systems, which could be of importance for spintronics and quantum information applications. △ Less

Submitted 12 March, 2017; originally announced March 2017.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. Lett. 118, 146801 (2017)

Zero-Energy Modes from Coalescing Andreev States in a Two-Dimensional Semiconductor-Superconductor Hybrid Platform

Authors: Henri J. Suominen, Morten Kjaergaard, Alexander R. Hamilton, Javad Shabani, Chris J. Palmstrøm, Charles M. Marcus, Fabrizio Nichele

Abstract: We investigate zero-bias conductance peaks that arise from coalescing subgap Andreev states, consistent with emerging Majorana zero modes, in hybrid semiconductor-superconductor wires defined in a two-dimensional InAs/Al heterostructure using top-down lithography and gating. The measurements indicate a hard superconducting gap, ballistic tunneling contact, and in-plane critical fields up to $3$~T.… ▽ More We investigate zero-bias conductance peaks that arise from coalescing subgap Andreev states, consistent with emerging Majorana zero modes, in hybrid semiconductor-superconductor wires defined in a two-dimensional InAs/Al heterostructure using top-down lithography and gating. The measurements indicate a hard superconducting gap, ballistic tunneling contact, and in-plane critical fields up to $3$~T. Top-down lithography allows complex geometries, branched structures, and straightforward scaling to multicomponent devices compared to structures made from assembled nanowires. △ Less

Submitted 27 October, 2017; v1 submitted 10 March, 2017; originally announced March 2017.

Comments: Includes Supplementary Material

Report number: QDEV NBI 2017

Journal ref: Phys. Rev. Lett. 119, 176805 (2017)

Thickness dependent electronic structure in WTe$_2$ thin films

Authors: Fei-Xiang Xiang, Ashwin Srinivasan, Oleh Klochan, Shi-Xue Dou, Alex R. Hamilton, Xiao-Lin Wang

Abstract: We study the electronic structure of WTe$_2$ thin film fakes with different thickness down to 11 nm. Angle-dependent quantum oscillations reveal a crossover from a three-dimensional (3D) to a two-dimensional (2D) electronic system when the sample thickness is reduced below 26 nm. The quantum oscillations further show that the Fermi pockets get smaller as the samples are made thinner, indicating th… ▽ More We study the electronic structure of WTe$_2$ thin film fakes with different thickness down to 11 nm. Angle-dependent quantum oscillations reveal a crossover from a three-dimensional (3D) to a two-dimensional (2D) electronic system when the sample thickness is reduced below 26 nm. The quantum oscillations further show that the Fermi pockets get smaller as the samples are made thinner, indicating that the overlap between conduction and valence bands is getting smaller and implying the spatial confinement could lift the overlap in even thinner samples. In addition, the quadratic magnetoresistance (MR) also shows a crossover from 3D to 2D behavior as the samples are made thinner, while gating is shown to affect both the quadratic MR and the quantum oscillations of a thin sample by tuning its carrier density. △ Less

Submitted 8 March, 2017; originally announced March 2017.

Comments: 10 pages, 7 figures, supplementary material included

Journal ref: Phys. Rev. B 98, 035115 (2018)

Electrical control of the sign of the g-factor in a GaAs hole quantum point contact

Authors: A. Srinivasan, K. L. Hudson, D. S. Miserev, L. A. Yeoh, O. Klochan, K. Muraki, Y. Hirayama, O. P. Sushkov, A. R. Hamilton

Abstract: Zeeman splitting of 1D hole subbands is investigated in quantum point contacts (QPCs) fabricated on a (311) oriented GaAs-AlGaAs heterostructure. Transport measurements can determine the magnitude of the g-factor, but cannot usually determine the sign. Here we use a combination of tilted fields and a unique off-diagonal element in the hole g-tensor to directly detect the sign of g*. We are able to… ▽ More Zeeman splitting of 1D hole subbands is investigated in quantum point contacts (QPCs) fabricated on a (311) oriented GaAs-AlGaAs heterostructure. Transport measurements can determine the magnitude of the g-factor, but cannot usually determine the sign. Here we use a combination of tilted fields and a unique off-diagonal element in the hole g-tensor to directly detect the sign of g*. We are able to tune not only the magnitude, but also the sign of the g-factor by electrical means, which is of interest for spintronics applications. Furthermore, we show theoretically that the resulting behavior of g* can be explained by the momentum dependence of the spin-orbit interaction. △ Less

Submitted 26 February, 2017; originally announced February 2017.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 94, 041406(R), 2016

Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot

Authors: Daisy Q. Wang, Oleh Klochan, Jo-Tzu Hung, Dimitrie Culcer, Ian Farrer, David A. Ritchie, Alexander R. Hamilton

Abstract: Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and quantum information processing. Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the weak hyperfine interaction and strong spin-orbit interaction. However, it has only recently become possible to make stable quantum dots in these systems, mainly du… ▽ More Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and quantum information processing. Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the weak hyperfine interaction and strong spin-orbit interaction. However, it has only recently become possible to make stable quantum dots in these systems, mainly due to difficulties in device fabrication and stability. Here we present electrical transport measurements on holes in a gate-defined double quantum dot in a $\mathrm{GaAs/Al_xGa_{1-x}As}$ heterostructure. We observe clear Pauli spin blockade and demonstrate that the lifting of this spin blockade by an external magnetic field is highly anisotropic. Numerical calculations of heavy-hole transport through a double quantum dot in the presence of strong spin-orbit coupling show quantitative agreement with experimental results and suggest that the observed anisotropy can be explained by both the anisotropic effective hole g-factor and the surface Dresselhaus spin-orbit interaction. △ Less

Submitted 3 December, 2016; originally announced December 2016.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters, copyright ©American Chemical Society after peer review. To access the final edited and published work see http://pubs.acs.org/doi/full/10.1021/acs.nanolett.6b03752, Nano Letters, published online 24 Nov, 2016

Mechanisms for strong anisotropy of in-plane g-factors in hole based quantum point contacts

Authors: D. S. Miserev, A. Srinivasan, O. A. Tkachenko, V. A. Tkachenko, I. Farrer, D. A. Ritchie, A. R. Hamilton, O. P. Sushkov

Abstract: In-plane hole g-factors measured in quantum point contacts based on p-type heterostructures strongly depend on the orientation of the magnetic field with respect to the electric current. This effect, first reported a decade ago and confirmed in a number of publications, has remained an open problem. In this work, we present systematic experimental studies to disentangle different mechanisms contri… ▽ More In-plane hole g-factors measured in quantum point contacts based on p-type heterostructures strongly depend on the orientation of the magnetic field with respect to the electric current. This effect, first reported a decade ago and confirmed in a number of publications, has remained an open problem. In this work, we present systematic experimental studies to disentangle different mechanisms contributing to the effect and develop the theory which describes it successfully. We show that there is a new mechanism for the anisotropy related to the existence of an additional $B_+k_-^4σ_+$ effective Zeeman interaction for holes, which is kinematically different from the standard single Zeeman term $B_-k_-^2σ_+$ considered until now. △ Less

Submitted 13 September, 2017; v1 submitted 2 December, 2016; originally announced December 2016.

Journal ref: Phys. Rev. Lett. 119, 116803 (2017)

Spin blockade as a probe of Zeeman interactions in hole quantum dots

Authors: Jo-Tzu Hung, Elizabeth Marcellina, Bin Wang, Alexander R. Hamilton, Dimitrie Culcer

Abstract: Spin-orbit coupling is key to all-electrical control of quantum-dot spin qubits, and is frequently stronger for holes than for electrons. Here we investigate Pauli spin blockade for two heavy holes in a gated double quantum dot in an in-plane magnetic field. The interplay of the complex Zeeman and spin-orbit couplings causes a blockade leakage current anisotropic in the field direction. The period… ▽ More Spin-orbit coupling is key to all-electrical control of quantum-dot spin qubits, and is frequently stronger for holes than for electrons. Here we investigate Pauli spin blockade for two heavy holes in a gated double quantum dot in an in-plane magnetic field. The interplay of the complex Zeeman and spin-orbit couplings causes a blockade leakage current anisotropic in the field direction. The period of the anisotropic leakage is critically dependent on the relative magnitude of Zeeman interaction terms linear and cubic in the magnetic field. The current and singlet-triplet exchange splitting can be effectively adjusted by an appropriate choice of field direction, providing a simple control variable for quantum information processing and a way of tailoring magnetic interactions in hole spin qubits. △ Less

Submitted 6 October, 2016; originally announced October 2016.

Comments: 8 pages including 5 figures and the appendix

Journal ref: Phys. Rev. B 95, 195316 (2017)

Spin-orbit interactions in inversion-asymmetric 2D hole systems: a variational analysis

Authors: E. Marcellina, A. R. Hamilton, R. Winkler, Dimitrie Culcer

Abstract: We present an in-depth study of the spin-orbit (SO) interactions occurring in inversion-asymmetric two-dimensional hole gases at semiconductor heterointerfaces. We focus on common semiconductors such as GaAs, InAs, InSb, Ge, and Si. We develop a semi-analytical variational method to quantify SO interactions, accounting for both structure inversion asymmetry (SIA) and bulk inversion asymmetry (BIA)… ▽ More We present an in-depth study of the spin-orbit (SO) interactions occurring in inversion-asymmetric two-dimensional hole gases at semiconductor heterointerfaces. We focus on common semiconductors such as GaAs, InAs, InSb, Ge, and Si. We develop a semi-analytical variational method to quantify SO interactions, accounting for both structure inversion asymmetry (SIA) and bulk inversion asymmetry (BIA). Under certain circumstances, using the Schrieffer-Wolff (SW) transformation, the dispersion of the ground state heavy hole subbands can be written as $E(k) = A k^2 - B k^4 \pm C k^3$ where $A$, $B$, and $C$ are material- and structure-dependent coefficients. We provide a simple method of calculating the parameters $A$, $B$, and $C$, yet demonstrate that the simple SW approximation leading to a SIA (Rashba) spin splitting $\propto k^3$ frequently breaks down. We determine the parameter regimes at which this happens for the materials above and discuss a convenient semi-analytical method to obtain the correct spin splitting, effective masses, Fermi level, and subband occupancy, together with their dependence on the charge density, dopant type, and dopant concentration for both inversion and accumulation layers. Our results are in good agreement with fully numerical calculations as well as with experimental findings. They suggest that a naive application of the simple cubic Rashba model is of limited use in common heterostructures, as well as quantum dots. Finally, we find that for the single heterojunctions studied here the magnitudes of BIA terms are always much smaller than those of SIA terms. △ Less

Submitted 20 February, 2017; v1 submitted 29 April, 2016; originally announced April 2016.

Comments: 13 pages, 8 figures

Journal ref: Phys. Rev. B 95, 075305 (2017)

Manifestation of a non-abelian gauge field in a p-type semiconductor system

Authors: T. Li, L. A. Yeoh, A. Srinivasan, O. Klochan, D. A. Ritchie, M. Y. Simmons, O. P. Sushkov, A. R Hamilton

Abstract: Gauge theories, while describing fundamental interactions in nature, also emerge in a wide variety of physical systems. Abelian gauge fields have been predicted and observed in a number of novel quantum many-body systems, topological insulators, ultracold atoms and many others. However, the non-abelian gauge field, while playing the most fundamental role in particle physics, up to now has remained… ▽ More Gauge theories, while describing fundamental interactions in nature, also emerge in a wide variety of physical systems. Abelian gauge fields have been predicted and observed in a number of novel quantum many-body systems, topological insulators, ultracold atoms and many others. However, the non-abelian gauge field, while playing the most fundamental role in particle physics, up to now has remained a purely theoretical construction in many-body physics. In the present paper we report the first observation of a non-abelian gauge field in a spin-orbit coupled quantum system. The gauge field manifests itself in quantum magnetic oscillations of a hole doped two-dimensional (2D) GaAs heterostructure. Transport measurements were performed in tilted magnetic fields, where the effect of the emergent non-abelian gauge field was controlled by the components of the magnetic field in the 2D plane. △ Less

Submitted 1 June, 2016; v1 submitted 20 April, 2016; originally announced April 2016.

Comments: 11 pages, 8 figures

Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot

Authors: R. Li, F. E. Hudson, A. S. Dzurak, A. R. Hamilton

Abstract: In this work, we study hole transport in a planar silicon metal-oxide-semiconductor based double quantum dot. We demonstrate Pauli spin blockade in the few hole regime and map the spin relaxation induced leakage current as a function of inter-dot level spacing and magnetic field. With varied inter-dot tunnel coupling we can identify different dominant spin relaxation mechanisms. Applying a strong… ▽ More In this work, we study hole transport in a planar silicon metal-oxide-semiconductor based double quantum dot. We demonstrate Pauli spin blockade in the few hole regime and map the spin relaxation induced leakage current as a function of inter-dot level spacing and magnetic field. With varied inter-dot tunnel coupling we can identify different dominant spin relaxation mechanisms. Applying a strong out-of-plane magnetic field causes an avoided singlet-triplet level crossing, from which the heavy hole g-factor $\sim$ 0.93, and the strength of spin-orbit interaction $\sim$ 110 $μ$eV, can be obtained. The demonstrated strong spin-orbit interaction of heavy hole promises fast local spin manipulation using only electrical fields, which is of great interest for quantum information processing. △ Less

Submitted 1 September, 2015; originally announced September 2015.

Comments: 15 pages, 4 figures

Bottom-up assembly of metallic germanium

Authors: G. Scappucci, W. M. Klesse, L. A. Yeoh, D. J. Carter, O. Warschkow, N. A. Marks, D. L. Jaeger, G. Capellini, M. Y. Simmons, A. R. Hamilton

Abstract: Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material,[1] a light emitting medium in silicon-integrated lasers,[2,3] and a plasmonic conductor for bio-sensing.[4,5] Common to these diverse applications is… ▽ More Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material,[1] a light emitting medium in silicon-integrated lasers,[2,3] and a plasmonic conductor for bio-sensing.[4,5] Common to these diverse applications is the need for homogeneous, high electron densities in three-dimensions (3D). Here we use a bottom-up approach to demonstrate the 3D assembly of atomically sharp do** profiles in germanium by a repeated stacking of two-dimensional (2D) high-density phosphorus layers. This produces high-density (10^19 to 10^20 cm-3) low-resistivity (10^-4 Ohmcm) metallic germanium of precisely defined thickness, beyond the capabilities of diffusion-based do** technologies.[6] We demonstrate that free electrons from distinct 2D dopant layers coalesce into a homogeneous 3D conductor using anisotropic quantum interference measurements, atom probe tomography, and density functional theory. △ Less

Submitted 20 March, 2015; originally announced March 2015.

Dependence of the 0.7 anomaly on the curvature of the potential barrier in quantum wires

Authors: L. W. Smith, H. Al-Taie, A. A. J. Lesage, F. Sfigakis, P. See, J. P. Griffiths, H. E. Beere, G. A. C. Jones, D. A. Ritchie, A. R. Hamilton, M. J. Kelly, C. G. Smith

Abstract: Ninety eight one-dimensional channels defined using split gates fabricated on a GaAs/AlGaAs heterostructure are measured during one cooldown at 1.4 K. The devices are arranged in an array on a single chip, and individually addressed using a multiplexing technique. The anomalous conductance feature known as the "0.7 structure" is studied using statistical techniques. The ensemble of data show that… ▽ More Ninety eight one-dimensional channels defined using split gates fabricated on a GaAs/AlGaAs heterostructure are measured during one cooldown at 1.4 K. The devices are arranged in an array on a single chip, and individually addressed using a multiplexing technique. The anomalous conductance feature known as the "0.7 structure" is studied using statistical techniques. The ensemble of data show that the 0.7 anomaly becomes more pronounced and occurs at lower values as the curvature of the potential barrier in the transport direction decreases. This corresponds to an increase in the effective length of the device. The 0.7 anomaly is not strongly influenced by other properties of the conductance related to density. The curvature of the potential barrier appears to be the primary factor governing the shape of the 0.7 structure at a given T and B. △ Less

Submitted 1 June, 2015; v1 submitted 4 March, 2015; originally announced March 2015.

Journal ref: Phys. Rev. B 91, 23540 (2015)

Transport in disordered monolayer molybdenum disulfide nanoflakes: evidence for inhomogeneous charge transport

Authors: Shun-Tsung Lo, O. Klochan, C. -H. Liu, W. -H. Wang, A. R. Hamilton, C. -T. Liang

Abstract: We study charge transport in a monolayer molybdenum disulfide nanoflake over a wide range of carrier density, temperature, and electric bias. We find that the transport is best described by a percolating picture in which the disorder breaks translational invariance, breaking the system up into a series of puddles, rather than previous pictures in which the disorder is treated as homogeneous and un… ▽ More We study charge transport in a monolayer molybdenum disulfide nanoflake over a wide range of carrier density, temperature, and electric bias. We find that the transport is best described by a percolating picture in which the disorder breaks translational invariance, breaking the system up into a series of puddles, rather than previous pictures in which the disorder is treated as homogeneous and uniform. Our work provides insight to a unified picture of charge transport in monolayer molybdenum disulfide nanoflakes and contributes to the development of next-generation molybdenum disulfide based devices. △ Less

Submitted 30 August, 2014; originally announced September 2014.

Comments: Evidence for inhomogeneous charge transport in Molybdenum disulfide

Journal ref: Nanotechnol. 25, 375201 (2014)