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Electrical characterization of chemical and dielectric passivation of InAs nanowires
Authors:
Gregory W. Holloway,
Chris M. Haapamaki,
Paul Kuyanov,
Ray R. LaPierre,
Jonathan Baugh
Abstract:
The native oxide at the surface of III-V nanowires, such as InAs, can be a major source of charge noise and scattering in nanowire-based electronics, particularly for quantum devices operated at low temperatures. Surface passivation provides a means to remove the native oxide and prevent its regrowth. Here, we study the effects of surface passivation and conformal dielectric deposition by measurin…
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The native oxide at the surface of III-V nanowires, such as InAs, can be a major source of charge noise and scattering in nanowire-based electronics, particularly for quantum devices operated at low temperatures. Surface passivation provides a means to remove the native oxide and prevent its regrowth. Here, we study the effects of surface passivation and conformal dielectric deposition by measuring electrical conductance through nanowire field effect transistors treated with a variety of surface preparations. By extracting field effect mobility, subthreshold swing, threshold shift with temperature, and the gate hysteresis for each device, we infer the relative effects of the different treatments on the factors influencing transport. It is found that a combination of chemical passivation followed by deposition of an aluminum oxide dielectric shell yields the best results compared to the other treatments, and comparable to untreated nanowires. Finally, it is shown that an entrenched, top-gated device using an optimally treated nanowire can successfully form a stable double quantum dot at low temperatures. The device has excellent electrostatic tunability owing to the conformal dielectric layer and the combination of local top gates and a global back gate.
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Submitted 2 September, 2016; v1 submitted 4 June, 2016;
originally announced June 2016.
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Josephson Interference due to Orbital States in a Nanowire Proximity Effect Junction
Authors:
Kaveh Gharavi,
Gregory W. Holloway,
Chris M. Haapamaki,
Mohammad H. Ansari,
Mustafa Muhammad,
Ray R. LaPierre,
Jonathan Baugh
Abstract:
The Josephson supercurrent in a Nb-InAs nanowire-Nb junction was studied experimentally. The nanowire goes superconducting due to the proximity effect, and can sustain a phase coherent supercurrent. An unexpected modulation of the junction critical current in an axial magnetic field is observed, which we attribute to a novel form of Josephson interference, due to the multi-band nature of the nanow…
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The Josephson supercurrent in a Nb-InAs nanowire-Nb junction was studied experimentally. The nanowire goes superconducting due to the proximity effect, and can sustain a phase coherent supercurrent. An unexpected modulation of the junction critical current in an axial magnetic field is observed, which we attribute to a novel form of Josephson interference, due to the multi-band nature of the nanowire. Andreev pairs occupying states of different orbital angular momentum acquire different superconducting phases, producing oscillations of the critical current versus magnetic flux. We develop a semi-classical multi-band model that reproduces the experimental data well. While spin-orbit and Zeeman effects are predicted to produce similar behaviour, the orbital effects are dominant in the device studied here. This interplay between orbital states and magnetic field should be accounted for in the study of multi-band nanowire Josephson junctions, in particular, regarding the search for signatures of topological superconductivity in such devices.
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Submitted 18 June, 2014; v1 submitted 29 May, 2014;
originally announced May 2014.
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Sensitive Magnetic Force Detection with a Carbon Nanotube Resonator
Authors:
Kyle Willick,
Chris Haapamaki,
Jonathan Baugh
Abstract:
We propose a technique for sensitive magnetic point force detection using a suspended carbon nanotube (CNT) mechanical resonator combined with a magnetic field gradient generated by a ferromagnetic gate electrode. Numerical calculations of the mechanical resonance frequency show that single Bohr magneton changes in the magnetic state of an individual magnetic molecule grafted to the CNT can transl…
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We propose a technique for sensitive magnetic point force detection using a suspended carbon nanotube (CNT) mechanical resonator combined with a magnetic field gradient generated by a ferromagnetic gate electrode. Numerical calculations of the mechanical resonance frequency show that single Bohr magneton changes in the magnetic state of an individual magnetic molecule grafted to the CNT can translate to detectable frequency shifts, on the order of a few kHz. The dependences of the resonator response to device parameters such as length, tension, CNT diameter, and gate voltage are explored and optimal operating conditions are identified. A signal-to-noise analysis shows that in principle, magnetic switching at the level of a single Bohr magneton can be read out in a single shot on timescales as short as 10 microseconds. This force sensor should enable new studies of spin dynamics in isolated single molecule magnets, free from the crystalline or ensemble settings typically studied.
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Submitted 26 February, 2014;
originally announced February 2014.
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Magnetoconductance signatures of subband structure in semiconductor nanowires
Authors:
Gregory W. Holloway,
Daryoush Shiri,
Chris M. Haapamaki,
Kyle Willick,
Grant Watson,
Ray R. LaPierre,
Jonathan Baugh
Abstract:
The radial confining potential in a semiconductor nanowire plays a key role in determining its quantum transport properties. Previous reports have shown that an axial magnetic field induces flux-periodic conductance oscillations when the electronic states are confined to a shell. This effect is due to the coupling of orbital angular momentum to the magnetic flux. Here, we perform calculations of t…
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The radial confining potential in a semiconductor nanowire plays a key role in determining its quantum transport properties. Previous reports have shown that an axial magnetic field induces flux-periodic conductance oscillations when the electronic states are confined to a shell. This effect is due to the coupling of orbital angular momentum to the magnetic flux. Here, we perform calculations of the energy level structure, and consequently the conductance, for more general cases ranging from a flat potential to strong surface band bending. The transverse states are not confined to a shell, but are distributed across the nanowire. It is found that, in general, the subband energy spectrum is aperiodic as a function of both gate voltage and magnetic field. In principle, this allows for precise identification of the occupied subbands from the magnetoconductance patterns of quasi-ballistic devices. The aperiodicity becomes more apparent as the potential flattens. A quantitative method is introduced for matching features in the conductance data to the subband structure resulting from a particular radial potential, where a functional form for the potential is used that depends on two free parameters. Finally, a short-channel InAs nanowire FET device is measured at low temperature in search of conductance features that reveal the subband structure. Features are identified and shown to be consistent with three specific subbands. The experiment is analyzed in the context of the weak localization regime, however, we find that the subband effects predicted for ballistic transport should remain visible when back scattering dominates over interband scattering, as is expected for this device.
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Submitted 17 November, 2014; v1 submitted 23 May, 2013;
originally announced May 2013.
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Temperature-dependent electron mobility in InAs nanowires
Authors:
Nupur Gupta,
Yipu Song,
Gregory W. Holloway,
Urbasi Sinha,
Chris Haapamaki,
Ray R. LaPierre,
Jonathan Baugh
Abstract:
Effective electron mobilities are obtained by transport measurements on InAs nanowire field-effect transistors at temperatures ranging from 10-200 K. The mobility increases with temperature below ~ 30 - 50 K, and then decreases with temperature above 50 K, consistent with other reports. The magnitude and temperature dependence of the observed mobility can be explained by Coulomb scattering from io…
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Effective electron mobilities are obtained by transport measurements on InAs nanowire field-effect transistors at temperatures ranging from 10-200 K. The mobility increases with temperature below ~ 30 - 50 K, and then decreases with temperature above 50 K, consistent with other reports. The magnitude and temperature dependence of the observed mobility can be explained by Coulomb scattering from ionized surface states at typical densities. The behaviour above 50 K is ascribed to the thermally activated increase in the number of scatterers, although nanoscale confinement also plays a role as higher radial subbands are populated, leading to interband scattering and a shift of the carrier distribution closer to the surface. Scattering rate calculations using finite-element simulations of the nanowire transistor confirm that these mechanisms are able to explain the data.
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Submitted 23 May, 2013; v1 submitted 12 October, 2012;
originally announced October 2012.
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Critical shell thickness for InAs-Al$_x$In$_{1-x}$As(P) core-shell nanowires
Authors:
C. M. Haapamaki,
J. Baugh,
R. R. LaPierre
Abstract:
InAs nanowires with Al$_x$In$_{1-x}$P or Al$x$In$_{1-x}$As shells were grown on GaAs substrates by the Au-assisted vapour-liquid-solid (VLS) method in a gas source molecular beam epitaxy (GS-MBE) system. Core diameters and shell thicknesses were measured by transmission electron microscopy (TEM). These measurements were then related to selected area diffraction (SAD) patterns to verify either inte…
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InAs nanowires with Al$_x$In$_{1-x}$P or Al$x$In$_{1-x}$As shells were grown on GaAs substrates by the Au-assisted vapour-liquid-solid (VLS) method in a gas source molecular beam epitaxy (GS-MBE) system. Core diameters and shell thicknesses were measured by transmission electron microscopy (TEM). These measurements were then related to selected area diffraction (SAD) patterns to verify either interface coherency or relaxation through misfit dislocations. A theoretical strain model is presented to determine the critical shell thickness for given core diameters. Zincblende stiffness parameters are transformed to their wurtzite counterparts via a well known tensor transformation. An energy criterion is then given to determine the shell thickness at which coherency is lost and dislocations become favourable.
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Submitted 19 September, 2012;
originally announced September 2012.
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Trapped charge dynamics in InAs nanowires
Authors:
Gregory W. Holloway,
Yipu Song,
Chris M. Haapamaki,
Ray R. LaPierre,
Jonathan Baugh
Abstract:
We study random telegraph noise in the conductance of InAs nanowire field-effect transistors due to single electron trap** in defects. The electron capture and emission times are measured as functions of temperature and gate voltage for individual traps, and are consistent with traps residing in the few-nanometer-thick native oxide, with a Coulomb barrier to trap**. These results suggest that…
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We study random telegraph noise in the conductance of InAs nanowire field-effect transistors due to single electron trap** in defects. The electron capture and emission times are measured as functions of temperature and gate voltage for individual traps, and are consistent with traps residing in the few-nanometer-thick native oxide, with a Coulomb barrier to trap**. These results suggest that oxide removal from the nanowire surface, with proper passivation to prevent regrowth, should lead to the reduction or elimination of random telegraph noise, an important obstacle for sensitive experiments at the single electron level.
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Submitted 11 October, 2012; v1 submitted 14 September, 2012;
originally announced September 2012.
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Electron Transport in InAs-InAlAs Core-Shell Nanowires
Authors:
Gregory W. Holloway,
Yipu Song,
Chris M. Haapamaki,
Ray R. LaPierre,
Jonathan Baugh
Abstract:
Evidence is given for the effectiveness of InAs surface passivation by the growth of an epitaxial InAlAs shell. The electron mobility is measured as a function of temperature for both core-shell and unpassivated nanowires, with the core-shell nanowires showing a monotonic increase in mobility as temperature is lowered, in contrast to a turnover in mobility seen for the unpassivated nanowires. We a…
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Evidence is given for the effectiveness of InAs surface passivation by the growth of an epitaxial InAlAs shell. The electron mobility is measured as a function of temperature for both core-shell and unpassivated nanowires, with the core-shell nanowires showing a monotonic increase in mobility as temperature is lowered, in contrast to a turnover in mobility seen for the unpassivated nanowires. We argue that this signifies a reduction in low temperature ionized impurity scattering for the passivated nanowires, implying a reduction in surface states.
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Submitted 10 September, 2014; v1 submitted 12 September, 2012;
originally announced September 2012.
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Structural Investigation of InAs-AlInAs and InAs-AlInP Core-Shell Nanowires
Authors:
C. M. Haapamaki,
J. Baugh,
R. R. LaPierre
Abstract:
InAs nanowires were grown on GaAs substrates by the Au-assisted vapour-liquid-solid (VLS) method in a gas source molecular beam epitaxy (GS-MBE) system. Passivation of the InAs nanowires using InP shells proved difficult due to the tendency for the formation of axial rather than core-shell structures. To circumvent this issue, Al$_x$In$_{1-x}$As or Al$_x$In$_{1-x}$P shells with nominal Al composit…
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InAs nanowires were grown on GaAs substrates by the Au-assisted vapour-liquid-solid (VLS) method in a gas source molecular beam epitaxy (GS-MBE) system. Passivation of the InAs nanowires using InP shells proved difficult due to the tendency for the formation of axial rather than core-shell structures. To circumvent this issue, Al$_x$In$_{1-x}$As or Al$_x$In$_{1-x}$P shells with nominal Al composition fraction of x = 0.20, 0.36, or 0.53 were grown by direct vapour-solid deposition on the sidewalls of the InAs nanowires. Characterization by transmission electron microscopy revealed that the addition of Al in the shell resulted in a remarkable transition from the VLS to the vapour-solid growth mode with uniform shell thickness along the nanowire length. Possible mechanisms for this transition include reduced adatom diffusion, a phase change of the Au seed particle and surfactant effects. The InAs-AlInP core-shell nanowires exhibited misfit dislocations, while the InAs-AlInAs nanowires with lower strain appeared to be free of defects.
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Submitted 30 November, 2011;
originally announced November 2011.
