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Homologous self-assembled superlattices: What causes their periodic polarity switching? Review, model, and experimental test
Authors:
Varun Thakur,
Dor Benafsha,
Yury Turkulets,
Almog R. Azulay,
Xin Liang,
Rachel S. Goldman,
Ilan Shalish
Abstract:
Quantum semiconductor structures are commonly achieved by bandgap engineering that relies on the ability to switch from one semiconductor to another during their growth. Growth of a superlattice is typically demanding technologically. In contrast, accumulated evidence points to a tendency among a certain class of multiple-cation binary oxides to self-assemble spontaneously as superlattice structur…
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Quantum semiconductor structures are commonly achieved by bandgap engineering that relies on the ability to switch from one semiconductor to another during their growth. Growth of a superlattice is typically demanding technologically. In contrast, accumulated evidence points to a tendency among a certain class of multiple-cation binary oxides to self-assemble spontaneously as superlattice structures. This class has been dubbed the homologous superlattices. For a famous example, when a mixture of indium and zinc is oxidized, the phases of In-O and ZnO separate in an orderly periodic manner, along the ZnO polar axis, with polarity inversion taking place between consecutive ZnO sections. As we review here, the same structure has been observed when the indium was replaced with other metals, and perhaps even in ZnO alone. This peculiar self-assembled structure has been attracting research over the past decade. The purpose of this study is to gain understanding of the physics underlying the formation of this unique structure. Here, we first provide an extensive review of the accumulated literature on these spontaneously-formed structures and then propose an explanation for the long-standing mystery of this intriguing self-assembly in the form of an electrostatic growth phenomenon and test the proposed model on experimental data.
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Submitted 28 August, 2022;
originally announced August 2022.
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Mechanisms of GaN quantum dot formation during nitridation of Ga droplets
Authors:
H. Lu,
C. Reese,
S. Jeon,
A. Sundar,
Y. Fan,
E. Rizzi,
Y. Zhuo,
L. Qi,
R. S. Goldman
Abstract:
We have examined the formation mechanisms of GaN quantum dots (QDs) via annealing of Ga droplets in a nitrogen flux. We consider the temperature and substrate dependence of the size distributions of droplets and QDs, as well as the relative roles of Ga/N diffusivity and GaN nucleation rates on QD formation. We report on two competing mechanisms mediated by Ga surface diffusion, namely QD formation…
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We have examined the formation mechanisms of GaN quantum dots (QDs) via annealing of Ga droplets in a nitrogen flux. We consider the temperature and substrate dependence of the size distributions of droplets and QDs, as well as the relative roles of Ga/N diffusivity and GaN nucleation rates on QD formation. We report on two competing mechanisms mediated by Ga surface diffusion, namely QD formation at or away from pre-existing Ga droplets. We discuss the relative roles of nucleation and coarsening dominant growth, as well as the polytype selection, on various substrates. The new insights provide an opportunity for tailoring QD size and polytype distributions for a wide range of III-N semiconductor QDs.
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Submitted 4 November, 2019;
originally announced November 2019.
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Why do nanowires grow with their c-axis vertically-aligned in the absence of epitaxy?
Authors:
Almog R. Azulay,
Yury Turkulets,
Davide Del Gaudio,
Rachel S. Goldman,
Ilan Shalish
Abstract:
Images of uniform and upright nanowires are fascinating, but often, they are quite puzzling, when epitaxial templating from the substrate is clearly absent. Here, we reveal the physics underlying one such hidden growth guidance mechanism through a specific example - the case of ZnO nanowires grown on silicon oxide and glass. We show how electric fields exerted by the insulating substrate may be ma…
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Images of uniform and upright nanowires are fascinating, but often, they are quite puzzling, when epitaxial templating from the substrate is clearly absent. Here, we reveal the physics underlying one such hidden growth guidance mechanism through a specific example - the case of ZnO nanowires grown on silicon oxide and glass. We show how electric fields exerted by the insulating substrate may be manipulated through the surface charge to define the orientation and polarity of the nanowires. Surface charge is ubiquitous on the surfaces of semiconductors and insulators, and as a result, substrate electric fields need always be considered. Our results suggest a new concept, according to which the growth of wurtzite semiconductors may often be described as a process of electric-charge-induced self assembly, wherein the internal built-in field in the polar material tends to align in parallel to an external field exerted by the substrate to minimize the interfacial energy of the system.
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Submitted 4 November, 2019; v1 submitted 6 September, 2018;
originally announced September 2018.
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Current-induced spin polarization in InGaAs and GaAs epilayers with varying do** densities
Authors:
M. Luengo-Kovac,
S. Huang,
D. Del Gaudio,
J. Occena,
R. S. Goldman,
R. Raimondi,
V. Sih
Abstract:
The current-induced spin polarization and momentum-dependent spin-orbit field were measured in In$_{x}$Ga$_{1-x}$As epilayers with varying indium concentrations and silicon do** densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was d…
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The current-induced spin polarization and momentum-dependent spin-orbit field were measured in In$_{x}$Ga$_{1-x}$As epilayers with varying indium concentrations and silicon do** densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the extrinsic contributions to the spin polarization mechanism must be considered. Theoretical calculations based on a model that includes extrinsic contributions to the spin dephasing and the spin Hall effect, in addition to the intrinsic Rashba and Dresselhaus spin-orbit coupling, are found to qualitatively agree with the experimental results.
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Submitted 1 June, 2017;
originally announced June 2017.
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g-Factor Modification in a Bulk InGaAs Epilayer by an In-plane Electric Field
Authors:
M. Luengo-Kovac,
M. Macmahon,
S. Huang,
R. S. Goldman,
V. Sih
Abstract:
We report on the modification of the g-factor by an in-plane electric field in an In$_{0.031}$Ga$_{0.969}$As epilayer. We performed external magnetic field scans of the Kerr rotation of the InGaAs film in order to independently determine the g-factor and the spin-orbit fields. The g-factor increases from $-0.4473\pm0.0001$ at 0 V/cm to $-0.4419\pm0.0001$ at 25 V/cm applied along the [1…
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We report on the modification of the g-factor by an in-plane electric field in an In$_{0.031}$Ga$_{0.969}$As epilayer. We performed external magnetic field scans of the Kerr rotation of the InGaAs film in order to independently determine the g-factor and the spin-orbit fields. The g-factor increases from $-0.4473\pm0.0001$ at 0 V/cm to $-0.4419\pm0.0001$ at 25 V/cm applied along the [1$\overline{1}$0] crystal axis. In addition, spatially-resolved spin measurements show a g-factor dependence on diffusive velocity. The change in g-factor with electric field can have a large effect on the determination of the internal spin-orbit and nuclear fields from Larmor precession frequency measurements.
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Submitted 31 March, 2015; v1 submitted 28 January, 2015;
originally announced January 2015.
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Spin lifetime measurements in GaAsBi thin films
Authors:
Brennan Pursley,
M. Luengo-Kovac,
G. Vardar,
R. S. Goldman,
V. Sih
Abstract:
Photoluminescence spectroscopy and Hanle effect measurements are used to investigate carrier spin dephasing and recombination times in the semiconductor alloy GaAsBi as a function of temperature and excitation energy. Hanle effect measurements reveal the product of g-factor and effective spin dephasing time (gTs) ranges from 0.8 ns at 40 K to 0.1 ns at 120 K. The temperature dependence of gTs prov…
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Photoluminescence spectroscopy and Hanle effect measurements are used to investigate carrier spin dephasing and recombination times in the semiconductor alloy GaAsBi as a function of temperature and excitation energy. Hanle effect measurements reveal the product of g-factor and effective spin dephasing time (gTs) ranges from 0.8 ns at 40 K to 0.1 ns at 120 K. The temperature dependence of gTs provides evidence for a thermally activated effect, which is attributed to hole localization at single Bi or Bi cluster sites below 40 K.
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Submitted 4 January, 2013; v1 submitted 12 November, 2012;
originally announced November 2012.
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Generation and remote detection of THz sound using semiconductor superlattices
Authors:
M. Trigo,
T. A. Eckhause,
J. K. Wahlstrand,
R. Merlin,
M. Reason,
R. S. Goldman
Abstract:
The authors introduce a novel approach to study the propagation of high frequency acoustic phonons in which the generation and detection involves two spatially separated superlattices $\sim 1 {\rm μm}$ apart. Propagating modes of frequencies up to $\sim 1 {\rm THz}$ escape from the superlattice where they are generated and reach the second superlattice where they are detected. The measured frequ…
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The authors introduce a novel approach to study the propagation of high frequency acoustic phonons in which the generation and detection involves two spatially separated superlattices $\sim 1 {\rm μm}$ apart. Propagating modes of frequencies up to $\sim 1 {\rm THz}$ escape from the superlattice where they are generated and reach the second superlattice where they are detected. The measured frequency spectrum reveals finite size effects, which can be accounted for by a continuum elastic model.
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Submitted 28 March, 2007; v1 submitted 26 March, 2007;
originally announced March 2007.
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Observation of Surface-Avoiding Waves: A New Class of Extended States in Periodic Media
Authors:
M. Trigo,
T. A. Eckhause,
M. Reason,
R. S. Goldman,
R. Merlin
Abstract:
Coherent time-domain optical experiments on GaAs-AlAs superlattices reveal the exis-tence of an unusually long-lived acoustic mode at ~ 0.6 THz, which couples weakly to the environment by evading the sample boundaries. Classical as well as quantum states that steer clear of surfaces are generally shown to occur in the spectrum of periodic struc-tures, for most boundary conditions. These surface-…
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Coherent time-domain optical experiments on GaAs-AlAs superlattices reveal the exis-tence of an unusually long-lived acoustic mode at ~ 0.6 THz, which couples weakly to the environment by evading the sample boundaries. Classical as well as quantum states that steer clear of surfaces are generally shown to occur in the spectrum of periodic struc-tures, for most boundary conditions. These surface-avoiding waves are associated with frequencies outside forbidden gaps and wavevectors in the vicinity of the center and edge of the Brillouin zone. Possible consequences for surface science and resonant cavity ap-plications are discussed.
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Submitted 13 July, 2006;
originally announced July 2006.
