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Impact of gigahertz and terahertz transport regimes on spin propagation and conversion in the antiferromagnet IrMn
Authors:
Oliver Gueckstock,
Rafael L. Seeger,
Tom S. Seifert,
Stephane Auffret,
Serge Gambarelli,
Jan N. Kirchhof,
Kirill I. Bolotin,
Vincent Baltz,
Tobias Kampfrath,
Lukáš Nádvorník
Abstract:
Control over spin transport in antiferromagnetic systems is essential for future spintronic applications with operational speeds extending to ultrafast time scales. Here, we study the transition from the gigahertz (GHz) to terahertz (THz) regime of spin transport and spin-to-charge current conversion (S2C) in the prototypical antiferromagnet IrMn by employing spin pum** and THz spectroscopy tech…
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Control over spin transport in antiferromagnetic systems is essential for future spintronic applications with operational speeds extending to ultrafast time scales. Here, we study the transition from the gigahertz (GHz) to terahertz (THz) regime of spin transport and spin-to-charge current conversion (S2C) in the prototypical antiferromagnet IrMn by employing spin pum** and THz spectroscopy techniques. We reveal a factor of 4 shorter characteristic propagation lengths of the spin current at THz frequencies (~ 0.5 nm) as compared to the GHz regime (~ 2 nm) which may be attributed to the ballistic and diffusive nature of electronic spin transport, respectively. The conclusion is supported by an extraction of sub-picosecond temporal dynamics of the THz spin current. We also report on a significant impact of the S2C originating from the IrMn/non-magnetic metal interface which is much more pronounced in the THz regime and opens the door for optimization of the spin control at ultrafast time scales.
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Submitted 12 February, 2022; v1 submitted 7 November, 2021;
originally announced November 2021.
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Independence of the inverse spin Hall effect with the magnetic phase in thin NiCu films
Authors:
Sara Varotto,
Maxen Cosset-Cheneau,
Cécile Grezes,
Yu Fu,
Patrick Warin,
Ariel Brenac,
Jean-François Jacquot,
Serge Gambarelli,
Christian Rinaldi,
Vincent Baltz,
Jean-Philippe Attané,
Laurent Vila,
Paul Noël
Abstract:
Large spin Hall angles have been observed in 3d ferromagnets, but their origin, and especially their link with the ferromagnetic order, remain unclear. Here, we investigate the inverse spin Hall effect of Ni60Cu40 and Ni50Cu50 across their Curie temperature using spin pum** experiments. We evidence that the inverse spin Hall effect in these samples is comparable to that of platinum, and that it…
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Large spin Hall angles have been observed in 3d ferromagnets, but their origin, and especially their link with the ferromagnetic order, remain unclear. Here, we investigate the inverse spin Hall effect of Ni60Cu40 and Ni50Cu50 across their Curie temperature using spin pum** experiments. We evidence that the inverse spin Hall effect in these samples is comparable to that of platinum, and that it is insensitive to the magnetic order. These results points towards a Heisenberg localized model of the transition, and suggest that the large spin Hall effects in 3d ferromagnets can be independent of the magnetic phase.
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Submitted 16 May, 2020;
originally announced May 2020.
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The valley Nernst effect in WSe$_2$
Authors:
Minh-Tuan Dau,
Céline Vergnaud,
Alain Marty,
Cyrille Beigné,
Serge Gambarelli,
Vincent Maurel,
Timothée Journot,
Bérangère Hyot,
Thomas Guillet,
Benjamin Grévin,
Hanako Okuno,
Matthieu Jamet
Abstract:
The Hall effect can be extended by inducing a temperature gradient in lieu of electric field that is known as the Nernst (-Ettingshausen) effect. The recently discovered spin Nernst effect in heavy metals continues to enrich the picture of Nernst effect-related phenomena. However, the collection would not be complete without mentioning the valley degree of freedom benchmarked by the observation of…
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The Hall effect can be extended by inducing a temperature gradient in lieu of electric field that is known as the Nernst (-Ettingshausen) effect. The recently discovered spin Nernst effect in heavy metals continues to enrich the picture of Nernst effect-related phenomena. However, the collection would not be complete without mentioning the valley degree of freedom benchmarked by the observation of the valley Hall effect. Here we show the experimental evidence of its missing counterpart, the valley Nernst effect. Using millimeter-sized WSe$_{2}$ mono-multi-layers and the ferromagnetic resonance-spin pum** technique, we are able to apply a temperature gradient by off-centering the sample in the radio frequency cavity and address a single valley through spin-valley coupling. The combination of a temperature gradient and the valley polarization leads to the valley Nernst effect in WSe$_{2}$ that we detect electrically at room temperature. The valley Nernst coefficient is in very good agreement with the predicted value.
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Submitted 17 October, 2019;
originally announced October 2019.
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Self-induced inverse spin Hall effect in ferromagnets: demonstration through non-monotonous temperature-dependence in permalloy
Authors:
O. Gladii,
L. Frangou,
A. Hallal,
R. L. Seeger,
P. Noel,
G. Forestier,
S. Auffret,
M. Rubio-Roy,
P. Warin,
L. Vila,
S. Wimmer,
H. Ebert,
S. Gambarelli,
M. Chshiev,
V. Baltz
Abstract:
We investigated the self-induced inverse spin Hall effect in ferromagnets. Temperature (T), thickness (t) and angular-dependent measurements of transverse voltage in spin pum** experiments were performed with permalloy films. Results revealed non-monotonous T-dependence of the self-induced transverse voltage. Qualitative agreement was found with first-principle calculations unravelling the skew…
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We investigated the self-induced inverse spin Hall effect in ferromagnets. Temperature (T), thickness (t) and angular-dependent measurements of transverse voltage in spin pum** experiments were performed with permalloy films. Results revealed non-monotonous T-dependence of the self-induced transverse voltage. Qualitative agreement was found with first-principle calculations unravelling the skew scattering, side-jump, and intrinsic contributions to the T-dependent spin Hall conductivity. Experimental data were similar whatever the material in contact with permalloy (oxides or metals), and revealed an increase of produced current with t, demonstrating a bulk origin of the effect.
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Submitted 3 September, 2019;
originally announced September 2019.
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Spin pum** as a generic probe for linear spin fluctuations: demonstration with ferromagnetic and antiferromagnetic orders, metallic and insulating electrical states
Authors:
O. Gladii,
L. Frangou,
G. Forestier,
R. L. Seeger,
S. Auffret,
M. Rubio-Roy,
R. Weil,
A. Mougin,
C. Gomez,
W. Jahjah,
J. -P. Jay,
D. Dekadjevi,
D. Spenato,
S. Gambarelli,
V. Baltz
Abstract:
We investigated spin injection by spin pum** from a spin-injector(NiFe) into a spin-sink to detect spin fluctuations in the spin-sink. By scanning the ordering-temperature of several magnetic transitions, we found that enhanced spin pum** due to spin fluctuations applies with several ordering states: ferromagnetic(Tb) and antiferromagnetic(NiO, NiFeOx, BiFeO3, exchange-biased and unbiased IrMn…
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We investigated spin injection by spin pum** from a spin-injector(NiFe) into a spin-sink to detect spin fluctuations in the spin-sink. By scanning the ordering-temperature of several magnetic transitions, we found that enhanced spin pum** due to spin fluctuations applies with several ordering states: ferromagnetic(Tb) and antiferromagnetic(NiO, NiFeOx, BiFeO3, exchange-biased and unbiased IrMn). Results also represent systematic experimental investigation supporting that the effect is independent of the metallic and insulating nature of the spin-sink, and is observed whether the spin current probe involves electronic or magnonic transport, facilitating advances in material characterization and engineering for spintronic applications.
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Submitted 11 January, 2019;
originally announced January 2019.
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Unraveling the influence of electronic and magnonic spin current injection near the magnetic ordering transition of IrMn metallic antiferromagnets
Authors:
O. Gladii,
L. Frangou,
G. Forestier,
R. L. Seeger,
S. Auffret,
I. Joumard,
M. Rubio-Roy,
S. Gambarelli,
V. Baltz
Abstract:
Although spin injection at room temperature in an IrMn metallic antiferromagnet strongly depends on the transport regime, and is more efficient in the case of magnonic transport, in this article, we present experimental data demonstrating that the enhanced efficiency of spin injection caused by spin fluctuations near the ordering temperature can be as efficient for the electronic and magnonic tran…
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Although spin injection at room temperature in an IrMn metallic antiferromagnet strongly depends on the transport regime, and is more efficient in the case of magnonic transport, in this article, we present experimental data demonstrating that the enhanced efficiency of spin injection caused by spin fluctuations near the ordering temperature can be as efficient for the electronic and magnonic transport regimes. By selecting representative interacting environments, we also demonstrated that the amplification of spin injection near the ordering temperature of the IrMn antiferromagnet is independent of exchange coupling with an adjacent NiFe ferromagnet. In addition, our findings confirm that the spin current carried by magnons penetrates deeper than that transported by conduction electrons in IrMn. Finally, our data indicates that the value of the ordering temperature for the IrMn antiferromagnet is not significantly affected by either the electronic or magnonic nature of the spin current probe, or by exchange coupling.
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Submitted 17 September, 2018;
originally announced September 2018.
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Tuning spin-charge interconversion with quantum confinement in ultrathin Bi/Ge(111) films
Authors:
C. Zucchetti,
M. -T Dau,
F. Bottegoni,
C. Vergnaud,
T. Guillet,
A. Marty,
C. Beigné,
S. Gambarelli,
A. Picone,
A. Calloni,
G. Bussetti,
A. Brambilla,
L. Duò,
F. Ciccacci,
P. K. Das,
J. Fujii,
I. Vobornik,
M. Finazzi,
M. Jamet
Abstract:
Spin-charge interconversion (SCI) phenomena have attracted a growing interest in the field of spintronics as means to detect spin currents or manipulate the magnetization of ferromagnets. The key ingredients to exploit these assets are a large conversion efficiency, the scalability down to the nanometer scale and the integrability with opto-electronic and spintronic devices. Here we show that, whe…
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Spin-charge interconversion (SCI) phenomena have attracted a growing interest in the field of spintronics as means to detect spin currents or manipulate the magnetization of ferromagnets. The key ingredients to exploit these assets are a large conversion efficiency, the scalability down to the nanometer scale and the integrability with opto-electronic and spintronic devices. Here we show that, when an ultrathin Bi film is epitaxially grown on top of a Ge(111) substrate, quantum size effects arising in nanometric Bi islands drastically boost the SCI efficiency, even at room temperature. Using x-ray diffraction (XRD), scanning tunneling microscopy (STM) and spin- and angle-resolved photoemission (S-ARPES) we obtain a clear picture of the film morphology, crystallography and electronic structure. We then exploit the Rashba-Edelstein effect (REE) and inverse Rashba-Edelstein effect (IREE) to directly quantify the SCI efficiency using optical and electrical spin injection.
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Submitted 4 May, 2018;
originally announced May 2018.
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Highly efficient spin-to-charge current conversion at room temperature in strained HgTe surface states
Authors:
P. Noël,
C. Thomas,
Y. Fu,
L. Vila,
B. Haas,
P. H. Jouneau,
S. Gambarelli,
T. Meunier,
P. Ballet,
J. P. Attané
Abstract:
We report the observation of spin-to-charge current conversion in strained mercury telluride at room temperature, using spin pum** experiments. The conversion rates are found to be very high, with inverse Edelstein lengths up to 2.0 +/- 0.5 nm. The influence of the HgTe layer thickness on the conversion efficiency has been studied, as well as the role of a HgCdTe barrier inserted in-between the…
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We report the observation of spin-to-charge current conversion in strained mercury telluride at room temperature, using spin pum** experiments. The conversion rates are found to be very high, with inverse Edelstein lengths up to 2.0 +/- 0.5 nm. The influence of the HgTe layer thickness on the conversion efficiency has been studied, as well as the role of a HgCdTe barrier inserted in-between the HgTe and NiFe layers. These measurements, associated to the temperature dependence of the resistivity, allows to ascribe these high conversion rates to the spin momentum locking property of HgTe surface states.
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Submitted 17 August, 2017;
originally announced August 2017.
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Relaxation mechanism driven by spin angular momentum absorption throughout antiferromagnetic phase transition in NiFe surface oxides
Authors:
L. Frangou,
G. Forestier,
S. Auffret,
S. Gambarelli,
V. Baltz
Abstract:
We report an alternative mechanism for the physical origin of the temperature-dependent ferromagnetic relaxation of Permalloy (NiFe) thin films. Through spin-pum** experiments, we demonstrate that the peak in the temperature-dependence of NiFe dam** can be understood in terms of enhanced spin angular momentum absorption at the magnetic phase transition in antiferromagnetic surface-oxidized lay…
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We report an alternative mechanism for the physical origin of the temperature-dependent ferromagnetic relaxation of Permalloy (NiFe) thin films. Through spin-pum** experiments, we demonstrate that the peak in the temperature-dependence of NiFe dam** can be understood in terms of enhanced spin angular momentum absorption at the magnetic phase transition in antiferromagnetic surface-oxidized layers. These results suggest new avenues for the investigation of an incompletely-understood phenomenon in physics.
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Submitted 16 December, 2016;
originally announced December 2016.
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Enhanced spin pum** efficiency in antiferromagnetic IrMn thin films around the magnetic phase transition
Authors:
Lamprini Frangou,
Simon Oyarzun,
Stephane Auffret,
Laurent Vila,
Serge Gambarelli,
Vincent Baltz
Abstract:
We report measurement of a spin pum** effect due to fluctuations of the magnetic order of IrMn thin films. A precessing NiFe ferromagnet injected spins into IrMn spin sinks, and enhanced dam** was observed around the IrMn magnetic phase transition. Our data was compared to a recently developed theory and converted into interfacial spin mixing conductance enhancements. By spotting the spin pump…
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We report measurement of a spin pum** effect due to fluctuations of the magnetic order of IrMn thin films. A precessing NiFe ferromagnet injected spins into IrMn spin sinks, and enhanced dam** was observed around the IrMn magnetic phase transition. Our data was compared to a recently developed theory and converted into interfacial spin mixing conductance enhancements. By spotting the spin pum** peak, the thickness dependence of the IrMn critical temperature could be determined and the characteristic length for the spin-spin interactions was deduced.
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Submitted 7 January, 2016; v1 submitted 11 September, 2015;
originally announced September 2015.
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Spin-pum** into surface states of topological insulator α-Sn, spin to charge conversion at room temperature
Authors:
J. -C. Rojas-Sánchez,
S. Oyarzun,
Y. Fu,
A. Marty,
C. Vergnaud,
S. Gambarelli,
L. Vila,
M. Jamet,
Y. Ohtsubo,
A. Taleb-Ibrahimi,
P. Le Fèvre,
F. Bertran,
N. Reyren,
J. -M. George,
A. Fert
Abstract:
We present experimental results on the conversion of a spin current into a charge current by spin pum** into the Dirac cone with helical spin polarization of the elemental topological insulator (TI) α-Sn[1-3]. By angle-resolved photoelectron spectroscopy (ARPES) we first confirm that the Dirac cone at the surface of α-Sn (0 0 1) layers subsists after covering with Ag. Then we show that resonant…
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We present experimental results on the conversion of a spin current into a charge current by spin pum** into the Dirac cone with helical spin polarization of the elemental topological insulator (TI) α-Sn[1-3]. By angle-resolved photoelectron spectroscopy (ARPES) we first confirm that the Dirac cone at the surface of α-Sn (0 0 1) layers subsists after covering with Ag. Then we show that resonant spin pum** at room temperature from Fe through Ag into α-Sn layers induces a lateral charge current that can be ascribed to the Inverse Edelstein Effect[4-5]. Our observation of an Inverse Edelstein Effect length[5-6] much longer than for Rashba interfaces[5-10] demonstrates the potential of the TI for conversion between spin and charge in spintronic devices. By comparing our results with data on the relaxation time of TI free surface states from time-resolved ARPES, we can anticipate the ultimate potential of TI for spin to charge conversion and the conditions to reach it.
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Submitted 9 September, 2015;
originally announced September 2015.
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Spin Pum** and Inverse Spin Hall Effect in Germanium
Authors:
J. -C. Rojas-Sánchez,
M. Cubukcu,
A. Jain,
C. Vergnaud,
C. Portemont,
C. Ducruet,
A. Barski,
A. Marty,
L. Vila,
J. -P. Attané,
E. Augendre,
G. Desfonds,
S. Gambarelli,
H. Jaffrès,
J. -M. George,
M. Jamet
Abstract:
We have measured the inverse spin Hall effect (ISHE) in \textit{n}-Ge at room temperature. The spin current in germanium was generated by spin pum** from a CoFeB/MgO magnetic tunnel junction in order to prevent the impedance mismatch issue. A clear electromotive force was measured in Ge at the ferromagnetic resonance of CoFeB. The same study was then carried out on several test samples, in parti…
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We have measured the inverse spin Hall effect (ISHE) in \textit{n}-Ge at room temperature. The spin current in germanium was generated by spin pum** from a CoFeB/MgO magnetic tunnel junction in order to prevent the impedance mismatch issue. A clear electromotive force was measured in Ge at the ferromagnetic resonance of CoFeB. The same study was then carried out on several test samples, in particular we have investigated the influence of the MgO tunnel barrier and sample annealing on the ISHE signal. First, the reference CoFeB/MgO bilayer grown on SiO$_{2}$ exhibits a clear electromotive force due to anisotropic magnetoresistance and anomalous Hall effect which is dominated by an asymmetric contribution with respect to the resonance field. We also found that the MgO tunnel barrier is essential to observe ISHE in Ge and that sample annealing systematically lead to an increase of the signal. We propose a theoretical model based on the presence of localized states at the interface between the MgO tunnel barrier and Ge to account for these observations. Finally, all of our results are fully consistent with the observation of ISHE in heavily doped $n$-Ge and we could estimate the spin Hall angle at room temperature to be $\approx$0.001.
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Submitted 12 May, 2013;
originally announced May 2013.
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Crossover from spin accumulation into interface states to spin injection in the germanium conduction band
Authors:
A. Jain,
J. -C. Rojas-Sanchez,
M. Cubukcu,
J. Peiro,
J. C. Le Breton,
E. Prestat,
C. Vergnaud,
L. Louahadj,
C. Portemont,
C. Ducruet,
V. Baltz,
A. Barski,
P. Bayle-Guillemaud,
L. Vila,
J. -P. Attané,
E. Augendre,
G. Desfonds,
S. Gambarelli,
H. Jaffrès,
J. -M. George,
M. Jamet
Abstract:
Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this letter, we demonstrate a clear transition from spin accumulation into interface states…
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Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this letter, we demonstrate a clear transition from spin accumulation into interface states to spin injection in the conduction band of $n$-Ge. We observe spin signal amplification at low temperature due to spin accumulation into interface states followed by a clear transition towards spin injection in the conduction band from 200 K up to room temperature. In this regime, the spin signal is reduced down to a value compatible with spin diffusion model. More interestingly, we demonstrate in this regime a significant modulation of the spin signal by spin pum** generated by ferromagnetic resonance and also by applying a back-gate voltage which are clear manifestations of spin current and accumulation in the germanium conduction band.
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Submitted 5 January, 2013; v1 submitted 29 March, 2012;
originally announced March 2012.
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Quantum simulations and experiments on Rabi oscillations of spin qubits: intrinsic {\sl vs} extrinsic dam**
Authors:
H. De Raedt,
B. Barbara,
S. Miyashita,
K. Michielsen,
S. Bertaina,
S. Gambarelli
Abstract:
Electron Paramagnetic Resonance experiments show that the decay of Rabi oscillations of ensembles of spin qubits depends noticeably on the microwave power and more precisely on the Rabi frequency, an effect recently called "driven decoherence". By direct numerical solution of the time-dependent Schrödinger equation of the associated many-body system, we scrutinize the different mechanisms that may…
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Electron Paramagnetic Resonance experiments show that the decay of Rabi oscillations of ensembles of spin qubits depends noticeably on the microwave power and more precisely on the Rabi frequency, an effect recently called "driven decoherence". By direct numerical solution of the time-dependent Schrödinger equation of the associated many-body system, we scrutinize the different mechanisms that may lead to this type of decoherence. Assuming the effects of dissipation to be negligible ($T_1=\infty$), it is shown that a system of dipolar-coupled spins with -- even weak-- random inhomogeneities is sufficient to explain the salient features of the experimental observations. Some experimental examples are given to illustrate the potential of the numerical simulation approach.
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Submitted 12 December, 2011;
originally announced December 2011.
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Decoherence window and electron-nuclear cross-relaxation in the molecular magnet V 15
Authors:
J. H. Shim,
S. Bertaina,
S. Gambarelli,
T. Mitra,
A. Müller,
E. I. Baibekov,
B. Z. Malkin,
B. Tsukerblat,
Bernard Barbara
Abstract:
Rabi oscillations in the V_15 Single Molecule Magnet (SMM) embedded in the surfactant DODA have been studied at different microwave powers. An intense dam** peak is observed when the Rabi frequency Omega_R falls in the vicinity of the Larmor frequency of protons w_N, while the dam** time t_R of oscillations reaches values 10 times shorter than the phase coherence time t_2 measured at the same…
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Rabi oscillations in the V_15 Single Molecule Magnet (SMM) embedded in the surfactant DODA have been studied at different microwave powers. An intense dam** peak is observed when the Rabi frequency Omega_R falls in the vicinity of the Larmor frequency of protons w_N, while the dam** time t_R of oscillations reaches values 10 times shorter than the phase coherence time t_2 measured at the same temperature. The experiments are interpreted by the N-spin model showing that t_R is directly associated with the decoherence via electronic/nuclear spin cross-relaxation in the rotating reference frame. It is shown that this decoherence is accompanied with energy dissipation in the range of the Rabi frequencies w_N - sigma_e < Omega_R < w_N, where sigma_e is the mean super-hyperfine field (in frequency units) induced by protons at SMMs. Weaker dam** without dissipation takes place outside this dissipation window. Simple local field estimations suggest that this rapid cross-relaxation in resonant microwave field observed for the first time in SMMV_15 should take place in other SMMs like Fe_8 and Mn_12 containing protons, too.
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Submitted 16 May, 2012; v1 submitted 25 June, 2010;
originally announced June 2010.
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Spin-Orbit Qubits of Rare-Earth-Metal Ions in Axially Symmetric Crystal Fields
Authors:
Sylvain Bertaina,
J. H. Shim,
S. Gambarelli,
B. Z. Malkin,
B. Barbara
Abstract:
Contrary to the well known spin qubits, rare-earth qubits are characterized by a strong influence of crystal field due to large spin-orbit coupling. At low temperature and in the presence of resonance microwaves, it is the magnetic moment of the crystal-field ground-state which nutates (for several $μ$s) and the Rabi frequency $Ω_R$ is anisotropic. Here, we present a study of the variations of…
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Contrary to the well known spin qubits, rare-earth qubits are characterized by a strong influence of crystal field due to large spin-orbit coupling. At low temperature and in the presence of resonance microwaves, it is the magnetic moment of the crystal-field ground-state which nutates (for several $μ$s) and the Rabi frequency $Ω_R$ is anisotropic. Here, we present a study of the variations of $Ω_R(\vec{H}_{0})$ with the magnitude and direction of the static magnetic field $\vec{H_{0}}$ for the odd $^{167}$Er isotope in a single crystal CaWO$_4$:Er$^{3+}$. The hyperfine interactions split the $Ω_R(\vec{H}_{0})$ curve into eight different curves which are fitted numerically and described analytically. These "spin-orbit qubits" should allow detailed studies of decoherence mechanisms which become relevant at high temperature and open new ways for qubit addressing using properly oriented magnetic fields.
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Submitted 25 November, 2009;
originally announced November 2009.
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Rare-earth solid-state qubits
Authors:
Sylvain Bertaina,
Serge Gambarelli,
Alexandra Tkachuk,
Igor Kurkin,
Boris Malkin,
Anatole Stepanov,
Bernard Barbara
Abstract:
Quantum bits (qubits) are the basic building blocks of any quantum computer. Superconducting qubits have been created with a 'top-down' approach that integrates superconducting devices into macroscopic electrical circuits [1-3], whereas electron-spin qubits have been demonstrated in quantum dots [4-6]. The phase coherence time (Tau2) and the single qubit figure of merit (QM) of superconducting a…
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Quantum bits (qubits) are the basic building blocks of any quantum computer. Superconducting qubits have been created with a 'top-down' approach that integrates superconducting devices into macroscopic electrical circuits [1-3], whereas electron-spin qubits have been demonstrated in quantum dots [4-6]. The phase coherence time (Tau2) and the single qubit figure of merit (QM) of superconducting and electron-spin qubits are similar -- Tau2 ~ microseconds and QM ~10-1000 below 100mK -- and it should be possible to scale-up these systems, which is essential for the development of any useful quantum computer. Bottom-up approaches based on dilute ensembles of spins have achieved much larger values of tau2 (up to tens of ms) [7, 8], but these systems cannot be scaled up, although some proposals for qubits based on 2D nanostructures should be scalable [9-11]. Here we report that a new family of spin qubits based on rare-earth ions demonstrates values of Tau2 (~ 50microseconds) and QM (~1400) at 2.5 K, which suggests that rare-earth qubits may, in principle, be suitable for scalable quantum information processing at 4He temperatures.
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Submitted 14 March, 2007;
originally announced March 2007.
