Showing 1–6 of 6 results for author: Frost, J E F

Experimental studies of T--shaped quantum dot transistors: phase-coherent electron transport

Authors: C. -T. Liang, J. E. F. Frost, M. Pepper, D. A. Ritchie, G. A. C. Jones

Abstract: We have measured the low-temperature transport properties of a T-shaped quantum dot. Replicated oscillations superimposed on one-dimensional conductance steps are observed. These structures are consistent with electron phase-coherent length resonance effects in the ballistic regime. Using a simple model, we suggest that both one-dimensional and two-dimensional electron-electron scattering gives… ▽ More We have measured the low-temperature transport properties of a T-shaped quantum dot. Replicated oscillations superimposed on one-dimensional conductance steps are observed. These structures are consistent with electron phase-coherent length resonance effects in the ballistic regime. Using a simple model, we suggest that both one-dimensional and two-dimensional electron-electron scattering gives rise to electron phase-breaking in our system. △ Less

Submitted 27 August, 1997; originally announced August 1997.

Comments: 9 pages, TeX, to be published in Solid State Communications

Journal ref: Solid State Communications 105, 109 (1998).

Experimental evidence of a metal-insulator transition in a half-filled Landau level

Authors: C. -T. Liang, J. E. F. Frost, M. Y. Simmons, D. A. Ritchie, M. Pepper

Abstract: We have measured the low-temperature transport properties of a high-mobility front-gated GaAs/Al_{0.33}Ga_{0.67}As heterostructure. By changing the applied gate voltage, we can vary the amount of disorder within the system. At a Landau level filling factor $ν=1/2$, where the system can be described by the composite fermion picture, we observe a crossover from metallic to insulating behaviour as… ▽ More We have measured the low-temperature transport properties of a high-mobility front-gated GaAs/Al_{0.33}Ga_{0.67}As heterostructure. By changing the applied gate voltage, we can vary the amount of disorder within the system. At a Landau level filling factor $ν=1/2$, where the system can be described by the composite fermion picture, we observe a crossover from metallic to insulating behaviour as the disorder is increased. Experimental results and theoretical prediction are compared. △ Less

Submitted 9 January, 1997; originally announced January 1997.

Comments: To be published in Solid State Communications. 4 figures

Resonant transmission through an open quantum dot

Authors: C. -T. Liang, I. M. Castleton, J. E. F. Frost, C. H. W. Barnes, C. G. Smith, C. J. B. Ford, D. A. Ritchie, M. Pepper

Abstract: We have measured the low-temperature transport properties of a quantum dot formed in a one-dimensional channel. In zero magnetic field this device shows quantized ballistic conductance plateaus with resonant tunneling peaks in each transition region between plateaus. Studies of this structure as a function of applied perpendicular magnetic field and source-drain bias indicate that resonant struc… ▽ More We have measured the low-temperature transport properties of a quantum dot formed in a one-dimensional channel. In zero magnetic field this device shows quantized ballistic conductance plateaus with resonant tunneling peaks in each transition region between plateaus. Studies of this structure as a function of applied perpendicular magnetic field and source-drain bias indicate that resonant structure deriving from tightly bound states is split by Coulomb charging at zero magnetic field. △ Less

Submitted 9 January, 1997; originally announced January 1997.

Comments: To be published in Phys. Rev. B (1997). 8 LaTex pages with 5 figures

Journal ref: Phys. Rev. B 55, 6723 (1997)

Distribution Function Analysis of Mesoscopic Hop** Conductance Fluctuations

Authors: R. J. F. Hughes, A. K. Savchenko, J. E. F. Frost, E. H. Linfield, J. T. Nicholls, M. Pepper, E. Kogan, M. Kaveh

Abstract: Variable-range hop** (VRH) conductance fluctuations in the gate-voltage characteristics of mesoscopic GaAs and Si transistors are analyzed by means of their full distribution functions (DFs). The forms of the DF predicted by the theory of Raikh and Ruzin have been verified under controlled conditions for both the long, narrow wire and the short, wide channel geometries. The variation of the me… ▽ More Variable-range hop** (VRH) conductance fluctuations in the gate-voltage characteristics of mesoscopic GaAs and Si transistors are analyzed by means of their full distribution functions (DFs). The forms of the DF predicted by the theory of Raikh and Ruzin have been verified under controlled conditions for both the long, narrow wire and the short, wide channel geometries. The variation of the mean square fluctuation size with temperature in wires fabricated from both materials is found to be described quantitatively by Lee's model of VRH along a 1D chain. Armed with this quantitative validation of the VRH model, the DF method is applied to the problem of magnetoconductance in the insulating regime. Here a non-monotonic variation of the magnetoconductance is observed in Si MOSFETS whose sign at low magnetic fields is dependent on the channel geometry. The origin of this defect is discussed within the framework of the interference model of VRH magnetoconductance in terms of narrowing of the DF in a magnetic field. △ Less

Submitted 25 April, 1996; v1 submitted 8 March, 1996; originally announced March 1996.

Comments: Revtex, 24 pages, 9 figures, figures are added

Ballistic Composite Fermions in Semiconductor Nanostructures

Authors: J. E. F. Frost, C. -T. Liang, D. R. Mace, M. Y. Simmons, D. A. Ritchie, M. Pepper

Abstract: We report the results of two fundamental transport measurements at a Landau level filling factor $ν$ of 1/2. The well known ballistic electron transport phenomena of quenching of the Hall effect in a mesoscopic cross-junction and negative magnetoresistance of a constriction are observed close to B~=~0 and $ν~=~ 1/2$. The experimental results demonstrate semi-classical charge transport by composi… ▽ More We report the results of two fundamental transport measurements at a Landau level filling factor $ν$ of 1/2. The well known ballistic electron transport phenomena of quenching of the Hall effect in a mesoscopic cross-junction and negative magnetoresistance of a constriction are observed close to B~=~0 and $ν~=~ 1/2$. The experimental results demonstrate semi-classical charge transport by composite fermions, which consist of electrons bound to an even number of flux quanta. △ Less

Submitted 17 January, 1996; originally announced January 1996.

Comments: 9 pages TeX 3.1415 C version 6.1, 3 PostScript figures

The Aharonov-Bohm Effect in the Fractional Quantum Hall Regime

Authors: J. D. F. Franklin, I. Zailer, C. J. B. Ford, P. J. Simpson, J. E. F. Frost, D. A. Ritchie, M. Y. Simmons, M. Pepper

Abstract: We have investigated experimentally resonant tunnelling through single-particle states formed around an antidot by a magnetic field, in the fractional quantum Hall regime. For 1/3 filling factor around the antidot, Aharonov-Bohm oscillations are observed with the same magnetic field period as in the integer quantum Hall regime. All our measurements are consistent with quasiparticles of fractiona… ▽ More We have investigated experimentally resonant tunnelling through single-particle states formed around an antidot by a magnetic field, in the fractional quantum Hall regime. For 1/3 filling factor around the antidot, Aharonov-Bohm oscillations are observed with the same magnetic field period as in the integer quantum Hall regime. All our measurements are consistent with quasiparticles of fractional charge e*. However, the results are also consistent with particles of any charge (>= e*) as the system must rearrange every time the flux enclosed increases by h/e. △ Less

Submitted 20 September, 1995; v1 submitted 19 September, 1995; originally announced September 1995.

Comments: Postscript, 4 pages, gzipped (350 kB)