Showing 1–9 of 9 results for author: Ducruet, C

Steady State and Dynamics of Joule Heating in Magnetic Tunnel Junctions Observed via the Temperature Dependence of RKKY Coupling

Authors: A. Chavent, C. Ducruet, C. Portemont, L. Vila, J. Alvarez-Hérault, R. Sousa, I. L. Prejbeanu, B. Dieny

Abstract: Understanding quantitatively the heating dynamics in magnetic tunnel junctions (MTJ) submitted to current pulses is very important in the context of spin-transfer-torque magnetic random access memory development. Here we provide a method to probe the heating of MTJ using the RKKY coupling of a synthetic ferrimagnetic storage layer as a thermal sensor. The temperature increase versus applied bias v… ▽ More Understanding quantitatively the heating dynamics in magnetic tunnel junctions (MTJ) submitted to current pulses is very important in the context of spin-transfer-torque magnetic random access memory development. Here we provide a method to probe the heating of MTJ using the RKKY coupling of a synthetic ferrimagnetic storage layer as a thermal sensor. The temperature increase versus applied bias voltage is measured thanks to the decrease of the spin-flop field with temperature. This method allows distinguishing spin transfer torque (STT) effects from the influence of temperature on the switching field. The heating dynamics is then studied in real-time by probing the conductance variation due to spin-flop rotation during heating. This approach provides a new method for measuring fast heating in spintronic devices, particularly magnetic random access memory (MRAM) using thermally assisted or spin transfer torque writing. △ Less

Submitted 27 September, 2016; originally announced September 2016.

Comments: 6 pages, 9 figures

Journal ref: Phys. Rev. Applied 6, 034003 (2016)

Modulating spin transfer torque switching dynamics with two orthogonal spin-polarizers by varying the cell aspect ratio

Authors: B. Lacoste, M. Marins de Castro, T. Devolder, R. C. Sousa, L. D. Buda-Prejbeanu, S. Auffret, U. Ebels, C. Ducruet, I. L. Prejbeanu, L. Vila, B. Rodmacq, B. Dieny

Abstract: We study in-plane magnetic tunnel junctions with additional perpendicular polarizer for subnanosecond-current-induced switching memories. The spin-transfer-torque switching dynamics was studied as a function of the cell aspect ratio both experimentally and by numerical simulations using the macrospin model. We show that the anisotropy field plays a significant role in the dynamics, along with the… ▽ More We study in-plane magnetic tunnel junctions with additional perpendicular polarizer for subnanosecond-current-induced switching memories. The spin-transfer-torque switching dynamics was studied as a function of the cell aspect ratio both experimentally and by numerical simulations using the macrospin model. We show that the anisotropy field plays a significant role in the dynamics, along with the relative amplitude of the two spin-torque contributions. This was confirmed by micromagnetic simulations. Real-time measurements of the reversal were performed with samples of low and high aspect ratio. For low aspect ratios, a precessional motion of the magnetization was observed and the effect of temperature on the precession coherence was studied. For high aspect ratios, we observed magnetization reversals in less than 1 ns for high enough current densities, the final state being controlled by the current direction in the magnetic tunnel junction cell. △ Less

Submitted 3 December, 2014; v1 submitted 23 July, 2014; originally announced July 2014.

Comments: 6 pages, 7 figures

Journal ref: Phys. Rev. B 90, 224404 (2014)

Spin Pum** and Inverse Spin Hall Effect in Germanium

Authors: J. -C. Rojas-Sánchez, M. Cubukcu, A. Jain, C. Vergnaud, C. Portemont, C. Ducruet, A. Barski, A. Marty, L. Vila, J. -P. Attané, E. Augendre, G. Desfonds, S. Gambarelli, H. Jaffrès, J. -M. George, M. Jamet

Abstract: We have measured the inverse spin Hall effect (ISHE) in \textit{n}-Ge at room temperature. The spin current in germanium was generated by spin pum** from a CoFeB/MgO magnetic tunnel junction in order to prevent the impedance mismatch issue. A clear electromotive force was measured in Ge at the ferromagnetic resonance of CoFeB. The same study was then carried out on several test samples, in parti… ▽ More We have measured the inverse spin Hall effect (ISHE) in \textit{n}-Ge at room temperature. The spin current in germanium was generated by spin pum** from a CoFeB/MgO magnetic tunnel junction in order to prevent the impedance mismatch issue. A clear electromotive force was measured in Ge at the ferromagnetic resonance of CoFeB. The same study was then carried out on several test samples, in particular we have investigated the influence of the MgO tunnel barrier and sample annealing on the ISHE signal. First, the reference CoFeB/MgO bilayer grown on SiO$_{2}$ exhibits a clear electromotive force due to anisotropic magnetoresistance and anomalous Hall effect which is dominated by an asymmetric contribution with respect to the resonance field. We also found that the MgO tunnel barrier is essential to observe ISHE in Ge and that sample annealing systematically lead to an increase of the signal. We propose a theoretical model based on the presence of localized states at the interface between the MgO tunnel barrier and Ge to account for these observations. Finally, all of our results are fully consistent with the observation of ISHE in heavily doped $n$-Ge and we could estimate the spin Hall angle at room temperature to be $\approx$0.001. △ Less

Submitted 12 May, 2013; originally announced May 2013.

Comments: 34 pages, 14 figures

Diffusive model of current-in-plane-tunneling in double magnetic tunnel junctions

Authors: Pierre-Yves Clément, Clarisse Ducruet, Claire Baraduc, Mair Chshiev, Bernard Diény

Abstract: We propose a model that describes current-in-plane tunneling transport in double barrier magnetic tunnel junctions in diffusive regime. Our study shows that specific features appear in double junctions that are described by introducing two typical length scales. The model may be used to measure the magnetoresistance and the resistance area product of both barriers in unpatterned stacks of double b… ▽ More We propose a model that describes current-in-plane tunneling transport in double barrier magnetic tunnel junctions in diffusive regime. Our study shows that specific features appear in double junctions that are described by introducing two typical length scales. The model may be used to measure the magnetoresistance and the resistance area product of both barriers in unpatterned stacks of double barrier magnetic tunnel junctions. △ Less

Submitted 13 June, 2012; originally announced June 2012.

Comments: 4 pages, 3 figures

Electrical and thermal spin accumulation in germanium

Authors: A. Jain, C. Vergnaud, J. Peiro, J. C. Le Breton, E. Prestat, L. Louahadj, C. Portemont, C. Ducruet, V. Baltz, A. Marty, A. Barski, P. Bayle-Guillemaud, L. Vila, J. -P. Attané, E. Augendre, H. Jaffrès, J. -M. George, M. Jamet

Abstract: In this letter, we first show electrical spin injection in the germanium conduction band at room temperature and modulate the spin signal by applying a gate voltage to the channel. The corresponding signal modulation agrees well with the predictions of spin diffusion models. Then by setting a temperature gradient between germanium and the ferromagnet, we create a thermal spin accumulation in germa… ▽ More In this letter, we first show electrical spin injection in the germanium conduction band at room temperature and modulate the spin signal by applying a gate voltage to the channel. The corresponding signal modulation agrees well with the predictions of spin diffusion models. Then by setting a temperature gradient between germanium and the ferromagnet, we create a thermal spin accumulation in germanium without any tunnel charge current. We show that temperature gradients yield larger spin accumulations than pure electrical spin injection but, due to competing microscopic effects, the thermal spin accumulation in germanium remains surprisingly almost unchanged under the application of a gate voltage to the channel. △ Less

Submitted 19 April, 2012; originally announced April 2012.

Comments: 7 pages, 3 figures

Crossover from spin accumulation into interface states to spin injection in the germanium conduction band

Authors: A. Jain, J. -C. Rojas-Sanchez, M. Cubukcu, J. Peiro, J. C. Le Breton, E. Prestat, C. Vergnaud, L. Louahadj, C. Portemont, C. Ducruet, V. Baltz, A. Barski, P. Bayle-Guillemaud, L. Vila, J. -P. Attané, E. Augendre, G. Desfonds, S. Gambarelli, H. Jaffrès, J. -M. George, M. Jamet

Abstract: Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this letter, we demonstrate a clear transition from spin accumulation into interface states… ▽ More Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this letter, we demonstrate a clear transition from spin accumulation into interface states to spin injection in the conduction band of $n$-Ge. We observe spin signal amplification at low temperature due to spin accumulation into interface states followed by a clear transition towards spin injection in the conduction band from 200 K up to room temperature. In this regime, the spin signal is reduced down to a value compatible with spin diffusion model. More interestingly, we demonstrate in this regime a significant modulation of the spin signal by spin pum** generated by ferromagnetic resonance and also by applying a back-gate voltage which are clear manifestations of spin current and accumulation in the germanium conduction band. △ Less

Submitted 5 January, 2013; v1 submitted 29 March, 2012; originally announced March 2012.

Comments: 5 pages, 4 figures

Journal ref: Physical Review Letters 109, 106603 (2012)

Inter-similarity between coupled networks

Authors: Roni Parshani, Celine Rozenblat, Daniele Ietri, Cesar Ducruet, Shlomo Havlin

Abstract: Recent studies have shown that a system composed from several randomly interdependent networks is extremely vulnerable to random failure. However, real interdependent networks are usually not randomly interdependent, rather a pair of dependent nodes are coupled according to some regularity which we coin inter-similarity. For example, we study a system composed from an interdependent world wide por… ▽ More Recent studies have shown that a system composed from several randomly interdependent networks is extremely vulnerable to random failure. However, real interdependent networks are usually not randomly interdependent, rather a pair of dependent nodes are coupled according to some regularity which we coin inter-similarity. For example, we study a system composed from an interdependent world wide port network and a world wide airport network and show that well connected ports tend to couple with well connected airports. We introduce two quantities for measuring the level of inter-similarity between networks (i) Inter degree-degree correlation (IDDC) (ii) Inter-clustering coefficient (ICC). We then show both by simulation models and by analyzing the port-airport system that as the networks become more inter-similar the system becomes significantly more robust to random failure. △ Less

Submitted 21 October, 2010; originally announced October 2010.

Comments: 4 pages, 3 figures

Analysis of anisotropy crossover due to oxygen in Pt/Co/MOx trilayer

Authors: Aurélien Manchon, Clarisse Ducruet, Lucien Lombard, Stéphane Auffret, Bernard Rodmacq, Bernard Dieny, Stefania Pizzini, Jan Vogel, Vojtech Uhlir, Michael Hochstrasser, Giancarlo Panaccione

Abstract: Extraordinary Hall effect and X-ray spectroscopy measurements have been performed on a series of Pt/Co/MOx trilayers (M=Al, Mg, Ta...) in order to investigate the role of oxidation in the onset of perpendicular magnetic anisotropy at the Co/MOx interface. It is observed that varying the oxidation time modifies the magnetic properties of the Co layer, inducing a magnetic anisotropy crossover from… ▽ More Extraordinary Hall effect and X-ray spectroscopy measurements have been performed on a series of Pt/Co/MOx trilayers (M=Al, Mg, Ta...) in order to investigate the role of oxidation in the onset of perpendicular magnetic anisotropy at the Co/MOx interface. It is observed that varying the oxidation time modifies the magnetic properties of the Co layer, inducing a magnetic anisotropy crossover from in-plane to out-of-plane. We focused on the influence of plasma oxidation on Pt/Co/AlOx perpendicular magnetic anisotropy. The interfacial electronic structure is analyzed via X-ray photoelectron spectroscopy measurements. It is shown that the maximum of out-of-plane magnetic anisotropy corresponds to the appearance of a significant density of Co-O bondings at the Co/AlOx interface. △ Less

Submitted 12 December, 2007; originally announced December 2007.

Journal ref: Journal of Applied Physics 104 (2008) 043914

X-Ray Analysis of Oxygen-induced Perpendicular Magnetic Anisotropy in Pt/Co/AlOx trilayer

Authors: Aurélien Manchon, Stefania Pizzini, Jan Vogel, Vojteh Uhlir, Lucien Lombard, Clarisse Ducruet, Stéphane Auffret, Bernard Rodmacq, Bernard Dieny, Michael Hochstrasser, Giancarlo Panaccione

Abstract: X-ray spectroscopy measurements have been performed on a series of Pt/Co/AlOx trilayers to investigate the role of Co oxidation in the perpendicular magnetic anisotropy of the Co/AlOx interface. It is observed that high temperature annealing modifies the magnetic properties of the Co layer, inducing an enhancement of the perpendicular magnetic anisotropy. The microscopic structural properties ar… ▽ More X-ray spectroscopy measurements have been performed on a series of Pt/Co/AlOx trilayers to investigate the role of Co oxidation in the perpendicular magnetic anisotropy of the Co/AlOx interface. It is observed that high temperature annealing modifies the magnetic properties of the Co layer, inducing an enhancement of the perpendicular magnetic anisotropy. The microscopic structural properties are analyzed via X-ray Absorption Spectroscopy, X-ray Magnetic Circular Dichroism and X-ray Photoelectron Spectroscopy measurements. It is shown that annealing enhances the amount of interfacial oxide, which may be at the origin of a strong perpendicular magnetic anisotropy. △ Less

Submitted 12 December, 2007; v1 submitted 17 September, 2007; originally announced September 2007.