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Band structure of the epitaxial Fe/MgO/GaAs(001) tunnel junction studied by X-ray and ultraviolet photoelectron spectroscopy
Authors:
Y. Lu,
J. C. Le Breton,
P. Turban,
B. Lépine,
P. Schieffer,
G. Jézéquel
Abstract:
The electronic band structure in the epitaxial Fe/MgO/GaAs(001) tunnel junction has been studied by X-ray and ultraviolet photoelectron spectroscopy measurements. The Schottky barrier height (SBH) of Fe on MgO/GaAs heterostructure is determined to be 3.3+-0.1eV, which sets the Fe Fermi level about 0.3eV above the GaAs valence band maximum. This SBH is also exactly the same as that measured from Fe…
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The electronic band structure in the epitaxial Fe/MgO/GaAs(001) tunnel junction has been studied by X-ray and ultraviolet photoelectron spectroscopy measurements. The Schottky barrier height (SBH) of Fe on MgO/GaAs heterostructure is determined to be 3.3+-0.1eV, which sets the Fe Fermi level about 0.3eV above the GaAs valence band maximum. This SBH is also exactly the same as that measured from Fe on MgO monocrystal. After Fe deposition, no band bending change is observed in MgO and GaAs underlayers. On the contrary, Au and Al deposition lead to clear variation of the band bending in both MgO and GaAs layers. This effect is analyzed as a fingerprint of defects states at the MgO/GaAs interface.
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Submitted 7 April, 2020;
originally announced April 2020.
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Electrical and thermal spin accumulation in germanium
Authors:
A. Jain,
C. Vergnaud,
J. Peiro,
J. C. Le Breton,
E. Prestat,
L. Louahadj,
C. Portemont,
C. Ducruet,
V. Baltz,
A. Marty,
A. Barski,
P. Bayle-Guillemaud,
L. Vila,
J. -P. Attané,
E. Augendre,
H. Jaffrès,
J. -M. George,
M. Jamet
Abstract:
In this letter, we first show electrical spin injection in the germanium conduction band at room temperature and modulate the spin signal by applying a gate voltage to the channel. The corresponding signal modulation agrees well with the predictions of spin diffusion models. Then by setting a temperature gradient between germanium and the ferromagnet, we create a thermal spin accumulation in germa…
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In this letter, we first show electrical spin injection in the germanium conduction band at room temperature and modulate the spin signal by applying a gate voltage to the channel. The corresponding signal modulation agrees well with the predictions of spin diffusion models. Then by setting a temperature gradient between germanium and the ferromagnet, we create a thermal spin accumulation in germanium without any tunnel charge current. We show that temperature gradients yield larger spin accumulations than pure electrical spin injection but, due to competing microscopic effects, the thermal spin accumulation in germanium remains surprisingly almost unchanged under the application of a gate voltage to the channel.
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Submitted 19 April, 2012;
originally announced April 2012.
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Crossover from spin accumulation into interface states to spin injection in the germanium conduction band
Authors:
A. Jain,
J. -C. Rojas-Sanchez,
M. Cubukcu,
J. Peiro,
J. C. Le Breton,
E. Prestat,
C. Vergnaud,
L. Louahadj,
C. Portemont,
C. Ducruet,
V. Baltz,
A. Barski,
P. Bayle-Guillemaud,
L. Vila,
J. -P. Attané,
E. Augendre,
G. Desfonds,
S. Gambarelli,
H. Jaffrès,
J. -M. George,
M. Jamet
Abstract:
Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this letter, we demonstrate a clear transition from spin accumulation into interface states…
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Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this letter, we demonstrate a clear transition from spin accumulation into interface states to spin injection in the conduction band of $n$-Ge. We observe spin signal amplification at low temperature due to spin accumulation into interface states followed by a clear transition towards spin injection in the conduction band from 200 K up to room temperature. In this regime, the spin signal is reduced down to a value compatible with spin diffusion model. More interestingly, we demonstrate in this regime a significant modulation of the spin signal by spin pum** generated by ferromagnetic resonance and also by applying a back-gate voltage which are clear manifestations of spin current and accumulation in the germanium conduction band.
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Submitted 5 January, 2013; v1 submitted 29 March, 2012;
originally announced March 2012.
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Electrical spin injection and detection in Germanium using three terminal geometry
Authors:
A. Jain,
L. Louahadj,
J. Peiro,
J. C. Le Breton,
C. Vergnaud,
A. Barski,
C. Beigné,
L. Notin,
A. Marty,
V. Baltz,
S. Auffret,
E. Augendre,
H. Jaffrès,
J. M. George,
M. Jamet
Abstract:
In this letter, we report on successful electrical spin injection and detection in \textit{n}-type germanium-on-insulator (GOI) using a Co/Py/Al$_{2}$O$_{3}$ spin injector and 3-terminal non-local measurements. We observe an enhanced spin accumulation signal of the order of 1 meV consistent with the sequential tunneling process via interface states in the vicinity of the Al$_{2}$O$_{3}$/Ge interfa…
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In this letter, we report on successful electrical spin injection and detection in \textit{n}-type germanium-on-insulator (GOI) using a Co/Py/Al$_{2}$O$_{3}$ spin injector and 3-terminal non-local measurements. We observe an enhanced spin accumulation signal of the order of 1 meV consistent with the sequential tunneling process via interface states in the vicinity of the Al$_{2}$O$_{3}$/Ge interface. This spin signal is further observable up to 220 K. Moreover, the presence of a strong \textit{inverted} Hanle effect points at the influence of random fields arising from interface roughness on the injected spins.
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Submitted 18 July, 2011;
originally announced July 2011.
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Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface
Authors:
S. P. Dash,
S. Sharma,
J. C. Le Breton,
H. Jaffrès,
J. Peiro,
J. -M. George,
A. Lemaître,
R. Jansen
Abstract:
Although the creation of spin polarization in various non-magnetic media via electrical spin injection from a ferromagnetic tunnel contact has been demonstrated, much of the basic behavior is heavily debated. It is reported here for semiconductor/Al2O3/ferromagnet tunnel structures based on Si or GaAs that local magnetostatic fields arising from interface roughness dramatically alter and even domi…
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Although the creation of spin polarization in various non-magnetic media via electrical spin injection from a ferromagnetic tunnel contact has been demonstrated, much of the basic behavior is heavily debated. It is reported here for semiconductor/Al2O3/ferromagnet tunnel structures based on Si or GaAs that local magnetostatic fields arising from interface roughness dramatically alter and even dominate the accumulation and dynamics of spins in the semiconductor. Spin precession in the inhomogeneous magnetic fields is shown to reduce the spin accumulation up to tenfold, and causes it to be inhomogeneous and non-collinear with the injector magnetization. The inverted Hanle effect serves as experimental signature. This interaction needs to be taken into account in the analysis of experimental data, particularly in extracting the spin lifetime and its variation with different parameters (temperature, do** concentration). It produces a broadening of the standard Hanle curve and thereby an apparent reduction of the spin lifetime. For heavily doped n-type Si at room temperature it is shown that the spin lifetime is larger than previously determined, and a new lower bound of 0.29 ns is obtained. The results are expected to be general and occur for spins near a magnetic interface not only in semiconductors but also in metals, organic and carbon-based materials including graphene, and in various spintronic device structures.
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Submitted 1 July, 2011; v1 submitted 9 January, 2011;
originally announced January 2011.
