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A ferromagnetic Eu-Pt surface compound grown below hexagonal boron nitride
Authors:
Alaa Mohammed Idris Bakhit,
Khadiza Ali,
Anna A. Makarova,
Igor Píš,
Federica Bondino,
Roberto Sant,
Saroj P. Dash,
Rodrigo Castrillo,
Yuri Hasegawa,
J. Enrique Ortega,
Laura Fernandez,
Frederik Schiller
Abstract:
One of the fundamental applications for monolayer-thick 2D materials is their use as protective layers of metal surfaces and in-situ intercalated reactive materials in ambient conditions. Here we investigate the structural, electronic, and magnetic properties, as well as the chemical stability in air of a very reactive metal, Europium, after intercalation between a hexagonal boron nitride (hBN) la…
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One of the fundamental applications for monolayer-thick 2D materials is their use as protective layers of metal surfaces and in-situ intercalated reactive materials in ambient conditions. Here we investigate the structural, electronic, and magnetic properties, as well as the chemical stability in air of a very reactive metal, Europium, after intercalation between a hexagonal boron nitride (hBN) layer and a Pt substrate. We demonstrate that Eu intercalation leads to a hBN-covered ferromagnetic EuPt$_2$ surface alloy with divalent Eu$^{2+}$ atoms at the interface. We expose the system to ambient conditions and find a partial conservation of the di-valent signal and hence the Eu-Pt interface. The use of a curved Pt substrate allows us to explore the changes in the Eu valence state and the ambient pressure protection at different substrate planes. The interfacial EuPt$_2$ surface alloy formation remains the same, but the resistance of the protecting hBN layer to ambient conditions is reduced, likely due to a rougher surface and a more discontinuous hBN coating.
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Submitted 21 June, 2023; v1 submitted 27 January, 2023;
originally announced January 2023.
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Effect of the crystallographic c-axis orientation on the tribological properties of the few-layer PtSe2
Authors:
Andrii Kozak,
Michaela Sojkova,
Filip Gucmann,
Michal Bodik,
Karol Vegso,
Edmund Dobrocka,
Igor Pis,
Federica Bondino,
Martin Hulman,
Peter Siffalovic,
Milan Tapajna
Abstract:
Two-dimensional (2D) transition metal dichalcogenides are potential candidates for ultrathin solid-state lubricants in low-dimensional systems owing to their flatness, high in-plane mechanical strength, and low shear interlayer strength. Yet, the effects of surface topography and surface chemistry on the tribological properties of 2D layers are still unclear. In this work, we performed a comparati…
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Two-dimensional (2D) transition metal dichalcogenides are potential candidates for ultrathin solid-state lubricants in low-dimensional systems owing to their flatness, high in-plane mechanical strength, and low shear interlayer strength. Yet, the effects of surface topography and surface chemistry on the tribological properties of 2D layers are still unclear. In this work, we performed a comparative investigation of nanoscale tribological properties of ultra-thin highly-ordered PtSe2 layers deposited on the sapphire substrates with the in-plane and out-of-plane crystallographic orientation of the PtSe2 c-axis flakes, and epitaxial PtSe2 layers. PtSe2 c-axis orientation was found to has an impact on the nanotribological, morphological and electrical properties of PtSe2, in particular the change in the alignment of the PtSe2 flakes from vertical (VA) to horizontal (HA) led to the lowering of the coefficient of friction from 0.21 to 0.16. This observation was accompanied by an increase in the root-mean-square surface roughness from 1.0 to 1.7 nm for the HA and VA films, respectively. The epitaxial films showed lower friction caused by lowering adhesion when compared to other investigated films, whereas the friction coefficient was similar to films with HA flakes. The observed trends in nanoscale friction is attributed to a different distribution of PtSe2 structure.
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Submitted 20 September, 2022; v1 submitted 16 September, 2022;
originally announced September 2022.
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Boron nitride-graphene in-plane hexagonal heterostructure in oxygen environment
Authors:
Elena Magnano,
Silvia Nappini,
Igor Pis,
Tevfik Onur Mentes,
Francesca Genuzio,
Andrea Locatelli,
Federica Bondino
Abstract:
Aiming to improve fabrication protocols for boron nitride and graphene (h-BNG) lateral heterostructures, we studied the growth of h-BNG thin films on platinum and their behavior in an oxygen environment. We employed a surface science approach based on advanced spectroscopy and imaging techniques to investigate the evolution of surface stoichiometry and chemical intermediates at each reaction step.…
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Aiming to improve fabrication protocols for boron nitride and graphene (h-BNG) lateral heterostructures, we studied the growth of h-BNG thin films on platinum and their behavior in an oxygen environment. We employed a surface science approach based on advanced spectroscopy and imaging techniques to investigate the evolution of surface stoichiometry and chemical intermediates at each reaction step. During oxygen exposure at increasing temperatures, we observed progressive and subsequent intercalation of oxygen, and selective etching of graphene accompanied by the oxidation of boron. Additionally, by exploiting the O2 etching selectivity towards graphene at 250°C and repeating growth cycles, we obtained in-plane h-BNG layers with controllable compositions and vertically stacked h-BN/Gr heterostructures without the use of consecutive transfer procedures. The growth using a single precursor molecule can be beneficial for the development of versatile atomically thin layers for electronic devices.
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Submitted 24 August, 2022; v1 submitted 23 August, 2022;
originally announced August 2022.
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Origin and Quantitative Description of the NESSIAS Effect at Si Nanostructures
Authors:
Dirk König,
Michael Frentzen,
Daniel Hiller,
Noël Wilck,
Giovanni Di Santo,
Luca Petaccia,
Igor Pìs,
Federica Bondino,
Elena Magnano,
Joachim Mayer,
Joachim Knoch,
Sean C. Smith
Abstract:
The electronic structure of low nanoscale (LNS) intrinsic silicon (i-Si) embedded in SiO2 vs. Si3N4 shifts away from vs. towards the vacuum level Evac, as described by the Nanoscale Electronic Structure Shift Induced by Anions at Surfaces (NESSIAS). Here, we fully explain the NESSIAS based on the quantum chemical properties of the elements involved. Deriving an analytic parameter Lambda to predict…
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The electronic structure of low nanoscale (LNS) intrinsic silicon (i-Si) embedded in SiO2 vs. Si3N4 shifts away from vs. towards the vacuum level Evac, as described by the Nanoscale Electronic Structure Shift Induced by Anions at Surfaces (NESSIAS). Here, we fully explain the NESSIAS based on the quantum chemical properties of the elements involved. Deriving an analytic parameter Lambda to predict the highest occupied molecular orbital energy of Si nanocrystals (NCs), we use various hybrid-DFT methods and NC sizes to verify the accuracy of Lambda. We report on first experimental data of Si nanowells (NWells) embedded in SiO2 vs. Si3N4 by X-ray absorption spectroscopy in total fluorescence yield mode (XAS-TFY) which are complemented by ultraviolet photoelectron spectroscopy (UPS), characterizing their conduction band and valence band edge energies E_C and E_V, respectively. Scanning the valence band sub-structure by UPS over NWell thickness, we derive an accurate estimate of EV shifted purely by spatial confinement, and thus the actual E_V shift due to NESSIAS. For 1.9 nm thick NWells in SiO2 vs. Si3N4, we get offsets of Delta E_C = 0.56 eV and Delta E_V = 0.89 eV, demonstrating a type II homojunction in LNS i-Si. This p/n junction generated by the NESSIAS eliminates any deteriorating impact of impurity dopants, offering undoped ultrasmall Si electronic devices with much reduced physical gate lengths and CMOS-compatible materials.
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Submitted 23 August, 2022;
originally announced August 2022.
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Tracking interfacial changes of graphene/Ge(110) during in-vacuum annealing
Authors:
L. Camilli,
M. Galbiati,
L. Di Gaspare,
M. De Seta,
I. Píš,
F. Bondino,
A. Caporale,
V. -P. Veigang-Radulescu,
S. Hofmann,
A. Sodo,
R. Gunnella,
L. Persichetti
Abstract:
Graphene quality indicators obtained by Raman spectroscopy have been correlated to the structural changes of the graphene/Germanium interface as a function of in-vacuum thermal annealing. Specifically, it is found that graphene becomes markedly defected at 650 °C. By combining scanning tunneling microscopy, x-Ray Photoelectron Spectroscopy and Near Edge x-ray Absorption Fine Structure Spectroscopy…
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Graphene quality indicators obtained by Raman spectroscopy have been correlated to the structural changes of the graphene/Germanium interface as a function of in-vacuum thermal annealing. Specifically, it is found that graphene becomes markedly defected at 650 °C. By combining scanning tunneling microscopy, x-Ray Photoelectron Spectroscopy and Near Edge x-ray Absorption Fine Structure Spectroscopy, we conclude that these defects are due to the release of H_{2} gas trapped at the graphene/Germanium interface. The H_{2} gas was produced following the transition from the as-grown hydrogen-termination of the Ge(110) surface to the emergence of surface reconstructions in the substrate. Interestingly, a complete self-healing process is observed in graphene upon annealing to 800 °C. The subtle interplay revealed between the microscopic changes occurring at the graphene/Germanium interface and graphene's defect density is valuable for advancing graphene growth, controlled 2D-3D heterogeneous materials interfacing and integrated fabrication technology on semiconductors.
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Submitted 20 July, 2022; v1 submitted 5 April, 2022;
originally announced April 2022.
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Soft X-ray spectroscopies in liquids and at solid-liquid interface at BACH beamline at Elettra
Authors:
Silvia Nappini,
Luca D'Amario,
Marco Favaro,
Simone Dal Zilio,
Federico Salvador,
Erik Betz-Guttner,
Andrea Fondacaro,
Igor Pis,
Luca Romanzin,
Alessandro Gambitta,
Federica Bondino,
Marco Lazzarino,
Elena Magnano
Abstract:
The Beamline for Advanced diCHroism (BACH) of the Istituto Officina dei Materiali-Consiglio Nazionale delle Ricerche (IOM-CNR), operating at Elettra synchrotron in Trieste (Italy), works in the extreme ultra violet (EUV)-soft X-ray photon energy range with selectable light polarization, high energy resolution, brilliance and time resolution. The beamline offers a multi-technique approach for the i…
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The Beamline for Advanced diCHroism (BACH) of the Istituto Officina dei Materiali-Consiglio Nazionale delle Ricerche (IOM-CNR), operating at Elettra synchrotron in Trieste (Italy), works in the extreme ultra violet (EUV)-soft X-ray photon energy range with selectable light polarization, high energy resolution, brilliance and time resolution. The beamline offers a multi-technique approach for the investigation of the electronic, chemical, structural, magnetic, and dynamical properties of materials. Recently one of the three end-stations has been dedicated to experiments based on electron transfer processes at the solid/liquid interfaces and during photocatalytic or electrochemical reactions. Suitable cells to perform soft X-ray spectroscopy in the presence of liquids and reagent gases at ambient pressure were developed. Here we present two types of static cells working in transmission or in fluorescence yield, and an electrochemical flow cell which allows to carry out cyclic voltammetry in situ, electrodeposition on a working electrode (WE) and to study chemical reactions in-operando conditions. Examples of X-ray absorption spectroscopy (XAS) measurements performed in ambient conditions and during electrochemical experiments in liquid are presented.
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Submitted 19 December, 2020;
originally announced December 2020.
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The nature of ferromagnetism in the chiral helimagnet $Cr_{1/3}NbS_{2}$
Authors:
N. Sirica,
P. Vilmercati,
F. Bondino,
I. Pis,
S. Nappini,
S. -K. Mo,
A. V. Fedorov,
P. K. Das,
I. Vobornik,
J. Fujii,
L. Li,
D. Sapkota,
D. S. Parker,
D. G. Mandrus,
N. Mannella
Abstract:
The chiral helimagnet, $Cr_{1/3}NbS_{2}$, hosts exotic spin textures, whose influence on the magneto-transport properties, make this material an ideal candidate for future spintronic applications. To date, the interplay between macroscopic magnetic and transport degrees of freedom is believed to result from a reduction in carrier scattering following spin order. Here, we present electronic structu…
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The chiral helimagnet, $Cr_{1/3}NbS_{2}$, hosts exotic spin textures, whose influence on the magneto-transport properties, make this material an ideal candidate for future spintronic applications. To date, the interplay between macroscopic magnetic and transport degrees of freedom is believed to result from a reduction in carrier scattering following spin order. Here, we present electronic structure measurements through the helimagnetic transition temperature, $T_{C}$ that challenges this view by showing a Fermi surface comprised of strongly hybridized Nb- and Cr- derived electronic states, and spectral weight in proximity to the Fermi level to anomalously increases as temperature is lowered below $T_{C}$. These findings are rationalized on the basis of first principle, density functional theory calculations, which reveal a large nearest-neighbor exchange energy, suggesting the interaction between local spin moments and hybridized Nb- and Cr- derived itinerant states to go beyond the perturbative interaction of Ruderman-Kittel-Kasuya-Yosida, suggesting instead a mechanism rooted in a Hund's exchange interaction.
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Submitted 17 August, 2020;
originally announced August 2020.
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High carrier mobility epitaxially aligned PtSe2 films grown by one-zone selenization
Authors:
Michaela Sojkova,
Edmund Dobrocka,
Peter Hutar,
Valeria Taskova,
Lenka Pribusova-Slusna,
Roman Stoklas,
Igor Pis,
Federica Bondino,
Frans Munnik,
Martin Hulman
Abstract:
Few-layer PtSe2 films are promising candidates for applications in high-speed electronics, spintronics and photodetectors. Reproducible fabrication of large-area highly crystalline films is, however, still a challenge. Here, we report the fabrication of epitaxially aligned PtSe2 films using one-zone selenization of pre-sputtered platinum layers. We have studied the influence of the growth conditio…
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Few-layer PtSe2 films are promising candidates for applications in high-speed electronics, spintronics and photodetectors. Reproducible fabrication of large-area highly crystalline films is, however, still a challenge. Here, we report the fabrication of epitaxially aligned PtSe2 films using one-zone selenization of pre-sputtered platinum layers. We have studied the influence of the growth conditions on the structural and electrical properties of the films prepared from Pt layers with different initial thickness. The best results were obtained for PtSe2 layers grown at elevated temperatures (600 °C). The films exhibit signatures for a long-range in-plane ordering resembling an epitaxial growth. Charge carrier mobility determined by Hall-effect measurements is up to 24 cm2/V.s in these films.
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Submitted 22 September, 2020; v1 submitted 29 June, 2020;
originally announced June 2020.
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Local adsorption structure and bonding of porphine on Cu(111) before and after self-metalation
Authors:
D. A. Duncan,
P. Casado Aguilar,
M. Paszkiewicz,
K. Diller,
F. Bondino,
E. Magnano,
F. Klappenberger,
I. Píš,
A. Rubio,
J. V. Barth,
A. Pérez Paz,
F. Allegretti
Abstract:
We have experimentally determined the lateral registry and geometric structure of free-base porphine (2H-P) and copper-metalated porphine (Cu-P) adsorbed on Cu(111), by means of energy-scanned photoelectron diffraction (PhD), and compared the experimental results to density functional theory (DFT) calculations that included van der Waals corrections within the Tkatchenko-Scheffler approach. Both 2…
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We have experimentally determined the lateral registry and geometric structure of free-base porphine (2H-P) and copper-metalated porphine (Cu-P) adsorbed on Cu(111), by means of energy-scanned photoelectron diffraction (PhD), and compared the experimental results to density functional theory (DFT) calculations that included van der Waals corrections within the Tkatchenko-Scheffler approach. Both 2H-P and Cu-P adsorb with their center above a surface bridge site. Consistency is obtained between the experimental and DFT-predicted structural models, with a characteristic change in the corrugation of the four N atoms of the molecule's macrocycle following metalation. Interestingly, comparison with previously published data for cobalt porphine adsorbed on the same surface evidences a distinct increase in the average height of the N atoms above the surface through the series 2H-P, Cu-P, cobalt porphine. Such an increase strikingly anti-correlates the DFT-predicted adsorption strength, with 2H-P having the smallest adsorption height despite the weakest calculated adsorption energy. In addition, our findings suggest that for these macrocyclic compounds, substrate-to-molecule charge transfer and adsorption strength may not be univocally correlated.
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Submitted 6 May, 2019;
originally announced May 2019.
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Fe intercalation under graphene and hexagonal boron nitride in-plane heterostructure on Pt(111)
Authors:
Igor Píš,
Silvia Nappini,
Federica Bondino,
Tevfik Onur Menteş,
Alessandro Sala,
Andrea Locatelli,
Elena Magnano
Abstract:
Metal nanostructures confined between sp2 hybridized 2D materials and solid supports are attracting attention for their potential application in new nanotechnologies. Model studies under well-defined conditions are valuable for understanding the fundamental aspects of the phenomena under 2D covers. In this work we investigate the intercalation of iron atoms through a single layer of mixed graphene…
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Metal nanostructures confined between sp2 hybridized 2D materials and solid supports are attracting attention for their potential application in new nanotechnologies. Model studies under well-defined conditions are valuable for understanding the fundamental aspects of the phenomena under 2D covers. In this work we investigate the intercalation of iron atoms through a single layer of mixed graphene and hexagonal boron nitride on Pt(111) using a combination of spectroscopic and microscopic techniques. Thermally activated diffusion of iron proceeds preferentially under graphene and only partially under hexagonal boron nitride areas. When oxygen is coadsorbed with iron, the intercalation rate is higher, and formation of B2O3 and oxygenated B-C species is observed. Our results suggest the possibility of confining ferromagnetic layers under heterostructures of graphene and hexagonal boron nitride with potential technological implications in the fields of spintronics, magnetic data storage or chemistry under 2D covers.
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Submitted 11 April, 2018;
originally announced April 2018.
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Symmetry of the Fermi surface and evolution of the electronic structure across the paramagnetic-helimagnetic transition in MnSi/Si(111)
Authors:
Alessandro Nicolaou,
Matteo Gatti,
Elena Magnano,
Patrick Le Fèvre,
Federica Bondino,
François Bertran,
Antonio Tejeda,
Michèle Sauvage-Simkin,
Alina Vlad,
Yves Garreau,
Alessandro Coati,
Nicolas Guérin,
Fulvio Parmigiani,
Amina Taleb-Ibrahimi
Abstract:
MnSi has been extensively studied for five decades, nonetheless detailed information on the Fermi surface (FS) symmetry is still lacking. This missed information prevented from a comprehensive understanding the nature of the magnetic interaction in this material. Here, by performing angle-resolved photoemission spectroscopy on high-quality MnSi films epitaxially grown on Si(111), we unveil the FS…
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MnSi has been extensively studied for five decades, nonetheless detailed information on the Fermi surface (FS) symmetry is still lacking. This missed information prevented from a comprehensive understanding the nature of the magnetic interaction in this material. Here, by performing angle-resolved photoemission spectroscopy on high-quality MnSi films epitaxially grown on Si(111), we unveil the FS symmetry and the evolution of the electronic structure across the paramagnetic-helimagnetic transition at T$_C$ $\sim$ 40 K, along with the appearance of sharp quasiparticle emission below T$_C$. The shape of the resulting FS is found to fulfill robust nesting effects. These effects can be at the origin of strong magnetic fluctuations not accounted for by state-of-art quasiparticle self-consistent GW approximation. From this perspective, the unforeseen quasiparticle dam** detected in the paramagnetic phase and relaxing only below T$_C$, along with the persistence of the d-bands splitting well above T$_C$, at odds with a simple Stoner model for itinerant magnetism, open the search for exotic magnetic interactions favored by FS nesting and affecting the quasiparticles lifetime.
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Submitted 20 April, 2015;
originally announced April 2015.
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Spectroscopic Evidence for Strong Quantum Spin Fluctuations with Itinerant Character in YFe2Ge2
Authors:
N. Sirica,
F. Bondino,
S. Nappini,
I. Píš,
L. Poudel,
A. D. Christianson,
D. Mandrus,
D. J. Singh,
N. Mannella
Abstract:
We report x-ray absorption and photoemission spectroscopy of the electronic structure in the normal state of metallic YFe2Ge2. The data reveal evidence for large fluctuating spin moments on the Fe sites, as indicated by exchange multiplets appearing in the Fe 3s core level photoemission spectra, even though the compound does not show magnetic order. The magnitude of the multiplet splitting is comp…
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We report x-ray absorption and photoemission spectroscopy of the electronic structure in the normal state of metallic YFe2Ge2. The data reveal evidence for large fluctuating spin moments on the Fe sites, as indicated by exchange multiplets appearing in the Fe 3s core level photoemission spectra, even though the compound does not show magnetic order. The magnitude of the multiplet splitting is comparable to that observed in the normal state of the Fe-pnictide superconductors. This shows a connection between YFe2Ge2 and the Fe-based superconductors even though it contains neither pnictogens nor chalcogens. The implication is that the chemical range of compounds showing at least one of the characteristic magnetic signatures of the Fe-based superconductors is broader than previously thought.
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Submitted 30 January, 2015;
originally announced January 2015.
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The momentum and photon energy dependence of the circular dichroic photoemission in the bulk Rashba semiconductors BiTeX (X = I, Br, Cl)
Authors:
A. Crepaldi,
F. Cilento,
M. Zacchigna,
M. Zonno,
J. C. Johannsen,
C. Tournier-Colletta,
L. Moreschini,
I. Vobornik,
F. Bondino,
E. Magnano,
H. Berger,
A. Magrez,
Ph. Bugnon,
G. Autés,
O. V. Yazyev,
M. Grioni,
F. Parmigiani
Abstract:
Bulk Rashba systems BiTeX (X = I, Br, Cl) are emerging as important candidates for develo** spintronics devices, because of the coexistence of spin-split bulk and surface states, along with the ambipolar character of the surface charge carriers. The need of studying the spin texture of strongly spin-orbit coupled materials has recently promoted circular dichroic Angular Resolved Photoelectron Sp…
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Bulk Rashba systems BiTeX (X = I, Br, Cl) are emerging as important candidates for develo** spintronics devices, because of the coexistence of spin-split bulk and surface states, along with the ambipolar character of the surface charge carriers. The need of studying the spin texture of strongly spin-orbit coupled materials has recently promoted circular dichroic Angular Resolved Photoelectron Spectroscopy (cd-ARPES) as an indirect tool to measure the spin and the angular degrees of freedom. Here we report a detailed photon energy dependent study of the cd-ARPES spectra in BiTeX (X = I, Br and Cl). Our work reveals a large variation of the magnitude and sign of the dichroism. Interestingly, we find that the dichroic signal modulates differently for the three compounds and for the different spin-split states. These findings show a momentum and photon energy dependence for the cd-ARPES signals in the bulk Rashba semiconductor BiTeX (X = I, Br, Cl). Finally, the outcome of our experiment indicates the important relation between the modulation of the dichroism and the phase differences between the wave-functions involved in the photoemission process. This phase difference can be due to initial or final state effects. In the former case the phase difference results in possible interference effects among the photo-electrons emitted from different atomic layers and characterized by entangled spin-orbital polarized bands. In the latter case the phase difference results from the relative phases of the expansion of the final state in different outgoing partial waves.
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Submitted 17 September, 2014;
originally announced September 2014.
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Cation diffusion and hybridization effects at the Mn-GaSe(0001) interface probed by soft X-ray electron spectroscopies
Authors:
S. Dash,
G. Drera,
E. Magnano,
F. Bondino,
P. Galinetto,
M. C. Mozzati,
G. Salvinelli,
V. Aguekian,
L. Sangaletti
Abstract:
The electronic properties of the Mn:GaSe interface, produced by evaporating Mn at room temperature on an epsilon-GaSe(0001) single crystal surface, have been studied by soft X-ray spectroscopies. Substitutional effects of Mn replacing Ga cations and Mn-Se hybridization effects are found both in core level and valence band photoemission spectra. The Mn cation valence state is probed by XAS measurem…
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The electronic properties of the Mn:GaSe interface, produced by evaporating Mn at room temperature on an epsilon-GaSe(0001) single crystal surface, have been studied by soft X-ray spectroscopies. Substitutional effects of Mn replacing Ga cations and Mn-Se hybridization effects are found both in core level and valence band photoemission spectra. The Mn cation valence state is probed by XAS measurements at the Mn L-edge, which indicate that Mn diffuses into the lattice as a Mn2+ cation with negligible crystal field effects. The Mn spectral weight in the valence band is probed by resonant photoemission spectroscopy at the Mn L-edge, which also allowed an estimation of the charge transfer and Mott-Hubbard energies on the basis of impurity-cluster configuration-interaction model of the photoemission process. The charge transfer energy is found to scale with the energy gap of the system. Competing effects of Mn segregation on the surface have been identified, and the transition from the Mn diffusion through the surface to the segregation of metallic layers on the surface has been tracked by core-level photoemission.
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Submitted 13 May, 2013; v1 submitted 8 March, 2013;
originally announced March 2013.
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Ultrafast carrier phonon dynamics in NaOH-reacted graphite oxide film
Authors:
Dongwook Lee,
Xingquan Zou,
Xi Zhu,
J. W. Seo,
Jacqueline M. Cole,
Federica Bondino,
Elena Magnano,
Saritha K. Nair,
Haibin Su
Abstract:
NaOH-reacted graphite oxide film was prepared by decomposing epoxy groups in graphite oxide into hydroxyl and -ONa groups with NaOH solution. Ultrafast carrier dynamics of the sample were studied by time-resolved transient differential reflection (\DeltaR/R). The data show two exponential relaxation processes. The slow relaxation process (\sim2ps) is ascribed to low energy acoustic phonon mediated…
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NaOH-reacted graphite oxide film was prepared by decomposing epoxy groups in graphite oxide into hydroxyl and -ONa groups with NaOH solution. Ultrafast carrier dynamics of the sample were studied by time-resolved transient differential reflection (\DeltaR/R). The data show two exponential relaxation processes. The slow relaxation process (\sim2ps) is ascribed to low energy acoustic phonon mediated scattering. The electron-phonon coupling and first-principles calculation results demonstrate that - OH and -ONa groups in the sample are strongly coupled. Thus, we attribute the fast relaxation process (\sim0.17ps) to the coupling of hydroxyl and -ONa groups in the sample.
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Submitted 16 July, 2012;
originally announced July 2012.
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A direct probe of the variability of Coulomb correlation in Fe-pnictide superconductors
Authors:
P. Vilmercati,
C. Parks Cheney,
F. Bondino,
E. Magnano,
M. Malvestuto,
M. A. McGuire,
A. S. Sefat,
B. C. Sales,
D. Mandrus,
D. J. Singh,
M. D. Johannes,
N. Mannella
Abstract:
We use core-valence-valence (CVV) Auger spectra to probe the Coulomb repulsion between holes in the valence band of Fe pnictide superconductors. By comparing the two-hole final state spectra to density functional theory calculations of the single particle density of states, we extract a measure of the electron correlations that exist in these systems. Our results show that the Coulomb repulsion is…
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We use core-valence-valence (CVV) Auger spectra to probe the Coulomb repulsion between holes in the valence band of Fe pnictide superconductors. By comparing the two-hole final state spectra to density functional theory calculations of the single particle density of states, we extract a measure of the electron correlations that exist in these systems. Our results show that the Coulomb repulsion is highly screened and can definitively be considered as weak. We also find that there are differences between the 1111 and 122 families and even a small variation as a function of the do**, x, in Ba(Fe1 xCox)2As2. We discuss how the values of the hole-hole Coulomb repulsion obtained from our study relate to the onsite Coulomb parameter "U" used in model and first principles calculations based on dynamical mean field theory, and establish an upper bound for its effective value. Our results impose stringent constraints on model based phase diagrams
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Submitted 20 June, 2012;
originally announced June 2012.
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Itinerant electrons, local moments, and magnetic correlations in pnictides high temperature superconductors
Authors:
P. Vilmercati,
A. Fedorov,
F. Bondino,
F. Offi,
G. Panaccione,
P. Lacovig,
L. Simonelli,
M. A. McGuire,
A. S. M. Sefat,
D. Mandrus,
B. C. Sales,
T. Egami,
W. Ku,
N. Mannella
Abstract:
A direct and element-specific measurement of the local Fe spin moment has been provided by analyzing the Fe 3s core level photoemission spectra in the parent and optimally doped CeFeAsO1-xFx (x = 0, 0.11) and Sr(Fe1 xCox)2As2 (x = 0, 0.10) pnictides. The rapid time scales of the photoemission process allowed the detection of large local spin moments fluctuating on a 10-15 s time scale in the param…
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A direct and element-specific measurement of the local Fe spin moment has been provided by analyzing the Fe 3s core level photoemission spectra in the parent and optimally doped CeFeAsO1-xFx (x = 0, 0.11) and Sr(Fe1 xCox)2As2 (x = 0, 0.10) pnictides. The rapid time scales of the photoemission process allowed the detection of large local spin moments fluctuating on a 10-15 s time scale in the paramagnetic, anti-ferromagnetic and superconducting phases, indicative of the occurrence of ubiquitous strong Hund's magnetic correlations. The magnitude of the spin moment is found to vary significantly among different families, 1.3 \muB in CeFeAsO and 2.1 \muB in SrFe2As2. Surprisingly, the spin moment is found to decrease considerably in the optimally doped samples, 0.9 \muB in CeFeAsO0.89F0.11 and 1.3 \muB in Sr(Fe0.9Co0.1)2As2. The strong variation of the spin moment against do** and material type indicates that the spin moments and the motion of itinerant electrons are influenced reciprocally in a self-consistent fashion, reflecting the strong competition between the antiferromagnetic super-exchange interaction among the spin moments and the kinetic energy gain of the itinerant electrons in the presence of a strong Hund's coupling. By describing the evolution of the magnetic correlations concomitant with the appearance of superconductivity, these results constitute a fundamental step toward attaining a correct description of the microscopic mechanisms sha** the electronic properties in the pnictides, including magnetism and high temperature superconductivity.
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Submitted 12 March, 2012; v1 submitted 8 March, 2012;
originally announced March 2012.
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Electronic Structure of CeFeAsO1-xFx (x=0, 0.11/x=0.12) compounds
Authors:
F. Bondino,
E. Magnano,
C. H. Booth,
F. Offi,
G. Panaccione,
M. Malvestuto,
G. Paolicelli,
L. Simonelli,
F. Parmigiani,
M. A. McGuire,
A. S. Sefat,
B. C. Sales,
R. **,
P. Vilmercati,
D. Mandrus,
D. J. Singh,
N. Mannella
Abstract:
We report an extensive study on the intrinsic bulk electronic structure of the high-temperature superconductor CeFeAsO0.89F0.11 and its parent compound CeFeAsO by soft and hard x-ray photoemission, x-ray absorption and soft-x-ray emission spectroscopies. The complementary surface/bulk probing depth, and the elemental and chemical sensitivity of these techniques allows resolving the intrinsic elect…
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We report an extensive study on the intrinsic bulk electronic structure of the high-temperature superconductor CeFeAsO0.89F0.11 and its parent compound CeFeAsO by soft and hard x-ray photoemission, x-ray absorption and soft-x-ray emission spectroscopies. The complementary surface/bulk probing depth, and the elemental and chemical sensitivity of these techniques allows resolving the intrinsic electronic structure of each element and correlating it with the local structure, which has been probed by extended-x-ray absorption fine structure spectroscopy. The measurements indicate a predominant 4f1 (i.e. Ce3+) initial state configuration for Cerium and an effective valence-band-to-4f charge-transfer screening of the core hole. The spectra also reveal the presence of a small Ce f0 initial state configuration, which we assign to the occurrence of an intermediate valence state. The data reveal a reasonably good agreement with the partial density of states as obtained in standard density functional calculations over a large energy range. Implications for the electronic structure of these materials are discussed.
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Submitted 9 July, 2010;
originally announced July 2010.
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Orbital Symmetry of Ba(Fe1-xCox)2As2 Superconductors Probed with X-ray Absorption Spectroscopy
Authors:
C. Parks Cheney,
F. Bondino,
T. A. Callcott,
P. Vilmercati,
D. Ederer,
E. Magnano,
M. Malvestuto,
F. Parmigiani,
A. S. Sefat,
M. A. McGuire,
R. **,
B. C. Sales,
D. Mandrus,
D. J. Singh,
J. W. Freeland,
N. Mannella
Abstract:
The orbital symmetries of electron doped iron-arsenide superconductors Ba(Fe1-xCox)2As2 have been measured with x-ray absorption spectroscopy. The data reveal signatures of Fe d electron itinerancy, weak electronic correlations, and a high degree of Fe-As hybridization related to the bonding topology of the Fe dxz+yz states, which are found to contribute substantially at the Fermi level. The ene…
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The orbital symmetries of electron doped iron-arsenide superconductors Ba(Fe1-xCox)2As2 have been measured with x-ray absorption spectroscopy. The data reveal signatures of Fe d electron itinerancy, weak electronic correlations, and a high degree of Fe-As hybridization related to the bonding topology of the Fe dxz+yz states, which are found to contribute substantially at the Fermi level. The energies and detailed orbital character of Fe and As derived unoccupied s and d states are found to be in remarkably good agreement with the predictions of standard density functional theory.
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Submitted 5 April, 2010; v1 submitted 3 February, 2010;
originally announced February 2010.
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Evidence for Strong Itinerant Spin Fluctuations in the Normal State of CeFeAsO(0.89)F(0.11) Iron-Oxypnictides
Authors:
F. Bondino,
E. Magnano,
M. Malvestuto,
F. Parmigiani,
M. A. McGuire,
A. S. Sefat,
B. C. Sales,
R. **,
D. Mandrus,
E. W. Plummer,
D. J. Singh,
N. Mannella
Abstract:
The electronic structure in the normal state of CeFeAsO0.89F0.11 oxypnictide superconductors has been investigated with x-ray absorption and photoemission spectroscopy. All the data exhibit signatures of Fe d-electron itinerancy. Exchange multiplets appearing in the Fe 3s core level indicate the presence of itinerant spin fluctuations. These findings suggest that the underlying physics and the o…
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The electronic structure in the normal state of CeFeAsO0.89F0.11 oxypnictide superconductors has been investigated with x-ray absorption and photoemission spectroscopy. All the data exhibit signatures of Fe d-electron itinerancy. Exchange multiplets appearing in the Fe 3s core level indicate the presence of itinerant spin fluctuations. These findings suggest that the underlying physics and the origin of superconductivity in these materials are likely to be quite different from those of the cuprate high-temperature superconductors. These materials provide opportunities for elucidating the role of magnetic fluctuations in high-temperature superconductivity.
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Submitted 10 November, 2008; v1 submitted 23 July, 2008;
originally announced July 2008.
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How strongly correlated is MnSi?
Authors:
F. Carbone,
M. Zangrando,
A. Brinkman,
A. Nicolaou,
F. Bondino,
E. Magnano,
A. A. Nugroho,
Th. Jarlborg,
F. Parmigiani,
D. van der Marel
Abstract:
We present an experimental study of the electronic structure of MnSi. Using X-ray Absorption Spectroscopy, X-ray photoemission and X-ray fluorescence we provide experimental evidence that MnSi has a mixed valence ground state. We show that self consistent LDA supercell calculations cannot replicate the XAS spectra of MnSi, while a good match is achieved within the atomic multiplet theory assumin…
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We present an experimental study of the electronic structure of MnSi. Using X-ray Absorption Spectroscopy, X-ray photoemission and X-ray fluorescence we provide experimental evidence that MnSi has a mixed valence ground state. We show that self consistent LDA supercell calculations cannot replicate the XAS spectra of MnSi, while a good match is achieved within the atomic multiplet theory assuming a mixed valence ground state. We discuss the role of the electron-electron interactions in this compound and estimate that the valence fluctuations are suppressed by a factor of 2.5, which means that the Coulomb repulsion is not negligible.
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Submitted 23 January, 2006;
originally announced January 2006.
