Showing 1–50 of 71 results for author: Baugh, J

High transparency induced superconductivity in field effect two-dimensional electron gases in undoped InAs/AlGaSb surface quantum wells

Authors: E. Annelise Bergeron, F. Sfigakis, A. Elbaroudy, A. W. M. Jordan, F. Thompson, George Nichols, Y. Shi, Man Chun Tam, Z. R. Wasilewski, J. Baugh

Abstract: We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in 24 nm wide indium arsenide surface quantum wells. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus are observed to filling factor $ν=2$ in magnetic fields of up to B = 18 T, at electron densities up to 8$\times 10^{11}$ /cm$^2$. Peak mobility is 11,000 cm… ▽ More We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in 24 nm wide indium arsenide surface quantum wells. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus are observed to filling factor $ν=2$ in magnetic fields of up to B = 18 T, at electron densities up to 8$\times 10^{11}$ /cm$^2$. Peak mobility is 11,000 cm$^2$/Vs at 2$\times 10^{12}$ /cm$^2$. Large Rashba spin-orbit coefficients up to 124 meV$\cdot$Å are obtained through weak anti-localization (WAL) measurements. Proximitized superconductivity is demonstrated in Nb-based superconductor-normal-superconductor (SNS) junctions, yielding 78$-$99% interface transparencies from superconducting contacts fabricated ex-situ (post-growth), using two commonly-used experimental techniques for measuring transparencies. These transparencies are on a par with those reported for epitaxially-grown superconductors. These SNS junctions show characteristic voltages $I_c R_{\text{N}}$ up to 870 $μ$V and critical current densities up to 9.6 $μ$A/$μ$m, among the largest values reported for Nb-InAs SNS devices. △ Less

Submitted 22 May, 2024; originally announced May 2024.

Comments: main text 8 pages with 3 figures; supplementary material 17 pages with 11 figures

Quantum optimal control robust to $1/f^α$ noises using fractional calculus: voltage-controlled exchange in semiconductor spin qubits

Authors: Bohdan Khromets, Jonathan Baugh

Abstract: Low-frequency $1/f^α$ charge noise significantly hinders the performance of voltage-controlled spin qubits in quantum dots. Here, we utilize fractional calculus to design voltage control pulses yielding the highest average fidelities for noisy quantum gate operations. We focus specifically on the exponential voltage control of the exchange interaction generating two-spin $\mathrm{SWAP}^k$ gates. W… ▽ More Low-frequency $1/f^α$ charge noise significantly hinders the performance of voltage-controlled spin qubits in quantum dots. Here, we utilize fractional calculus to design voltage control pulses yielding the highest average fidelities for noisy quantum gate operations. We focus specifically on the exponential voltage control of the exchange interaction generating two-spin $\mathrm{SWAP}^k$ gates. When stationary charge noise is the dominant source of gate infidelity, we derive that the optimal exchange pulse is long and weak, with the broad shape of the symmetric beta distribution function with parameter $1-α/2$. The common practice of making exchange pulses fast and high-amplitude still remains beneficial in the case of strongly nonstationary noise dynamics, modeled as fractional Brownian motion. The proposed methods are applicable to the characterization and optimization of quantum gate operations in various voltage-controlled qubit architectures. △ Less

Submitted 22 May, 2024; v1 submitted 21 May, 2024; originally announced May 2024.

Comments: 10 pages, 3 figures

MSC Class: 26A33; 49J40; 49N05

Simulated Charge Stability in a MOSFET Linear Quantum Dot Array

Authors: Zach D. Merino, Bohdan Khromets, Jonathan Baugh

Abstract: In this study, we address challenges in designing quantum information processors based on electron spin qubits in electrostatically-defined quantum dots (QDs). Numerical calculations of charge stability diagrams are presented for a realistic double QD device geometry. These methods generaize to linear QD arrays, and are based on determining the effective parameters of a Hubbard model Hamiltonian t… ▽ More In this study, we address challenges in designing quantum information processors based on electron spin qubits in electrostatically-defined quantum dots (QDs). Numerical calculations of charge stability diagrams are presented for a realistic double QD device geometry. These methods generaize to linear QD arrays, and are based on determining the effective parameters of a Hubbard model Hamiltonian that is then diagonalized to find the many-electron ground state energy. These calculations enable the identification of gate voltage ranges that maintain desired charge states during qubit manipulation, and also account for electrical cross-talk between QDs. As a result, the methods presented here promise to be a valuable tool for develo** scalable spin qubit quantum processors. △ Less

Submitted 23 February, 2024; originally announced February 2024.

Comments: 10 pages, 4 figures. Submitted in proceedings of the VI Applied Mathematics, Modeling, and Computer Simulation (AMMCS) International Conference, Waterloo, Ontario, Canada

Hamiltonian engineering with time-ordered evolution for unitary control of electron spins in semiconductor quantum dots

Authors: Bohdan Khromets, Zach D. Merino, Jonathan Baugh

Abstract: We present a unitary control pulse design method for a scalable quantum computer architecture based on electron spins in lateral quantum dots. We employ simultaneous control of spin interactions and derive the functional forms of spin Hamiltonian parameter pulses for a universal set of 1- and 2-qubit logic gates. This includes selective spin rotations with the weak local g-factor variations in the… ▽ More We present a unitary control pulse design method for a scalable quantum computer architecture based on electron spins in lateral quantum dots. We employ simultaneous control of spin interactions and derive the functional forms of spin Hamiltonian parameter pulses for a universal set of 1- and 2-qubit logic gates. This includes selective spin rotations with the weak local g-factor variations in the presence of the global oscillating field, and a Control-Phase operation with the simultaneous control of g-factors and exchange couplings. We outline how to generalize the control scheme to multiqubit gate operations and the case of constrained or imperfect control of the Hamiltonian parameters. △ Less

Submitted 12 February, 2024; originally announced February 2024.

Comments: 10 pages, 2 figures, 1 table. Submitted in proceedings of the VI Applied Mathematics, Modeling, and Computer Simulation (AMMCS) International Conference, Waterloo, Ontario, Canada

Observation of an Abrupt 3D-2D Morphological Transition in Thin Al Layers Grown by MBE on InGaAs surface

Authors: A. Elbaroudy, B. Khromets, F. Sfigakis, E. Bergeron, Y. Shi, M. C. A. Tam, T. Blaikie, George Nichols, J. Baugh, Z. R. Wasilewski

Abstract: Among superconductor/semiconductor hybrid structures, in-situ aluminum (Al) grown on InGaAs/InAs is widely pursued for the experimental realization of Majorana Zero Mode quasiparticles. This is due to the high carrier mobility, low effective mass, and large Landé g-factor of InAs, coupled with the relatively high value of the in-plane critical magnetic field in thin Al films. However, growing a th… ▽ More Among superconductor/semiconductor hybrid structures, in-situ aluminum (Al) grown on InGaAs/InAs is widely pursued for the experimental realization of Majorana Zero Mode quasiparticles. This is due to the high carrier mobility, low effective mass, and large Landé g-factor of InAs, coupled with the relatively high value of the in-plane critical magnetic field in thin Al films. However, growing a thin, continuous Al layer using the Molecular Beam Epitaxy (MBE) is challenging due to aluminum's high surface mobility and tendency for 3D nucleation on semiconductor surfaces. A study of epitaxial Al thin film growth on In0.75Ga0.25As with MBE is presented, focusing on the effects of the Al growth rate and substrate temperature on the nucleation of Al layers. We find that for low deposition rates, 0.1 Å/s and 0.5 Å/s, the growth continues in 3D mode during the deposition of the nominal 100 Å of Al, resulting in isolated Al islands. However, for growth rates of 1.5 Å/s and above, the 3D growth mode quickly transitions into island coalescence, leading to a uniform 2D Al layer. Moreover, this transition is very abrupt, happening over an Al flux increase of less than 1%. We discuss the growth mechanisms explaining these observations. The results give new insights into the kinetics of Al deposition and show that with sufficiently high Al flux, a 2D growth on substrates at close to room temperature can be achieved already within the first few Al monolayers. This eliminates the need for complex cryogenic substrate cooling and paves the way for the development of high-quality superconductor-semiconductor interfaces in standard MBE systems. △ Less

Submitted 19 April, 2024; v1 submitted 27 January, 2024; originally announced January 2024.

Comments: The following article has been published in Journal of Vacuum Science & Technology A. DOI: https://doi.org/10.1116/6.0003459

Report number: JVA23-AR-MBE2024-00767

Stable electroluminescence in ambipolar dopant-free lateral p-n junctions

Authors: Lin Tian, Francois Sfigakis, Arjun Shetty, Ho-Sung Kim, Nachiket Sherlekar, Sara Hosseini, Man Chun Tam, Brad van Kasteren, Brandon Buonacorsi, Zach Merino, Stephen R. Harrigan, Zbigniew Wasilewski, Jonathan Baugh, Michael E. Reimer

Abstract: Dopant-free lateral p-n junctions in the GaAs/AlGaAs material system have attracted interest due to their potential use in quantum optoelectronics (e.g., optical quantum computers or quantum repeaters) and ease of integration with other components, such as single electron pumps and spin qubits. A major obstacle to integration has been unwanted charge accumulation at the p-n junction gap that suppr… ▽ More Dopant-free lateral p-n junctions in the GaAs/AlGaAs material system have attracted interest due to their potential use in quantum optoelectronics (e.g., optical quantum computers or quantum repeaters) and ease of integration with other components, such as single electron pumps and spin qubits. A major obstacle to integration has been unwanted charge accumulation at the p-n junction gap that suppresses light emission, either due to enhanced non-radiative recombination or inhibition of p-n current. Typically, samples must frequently be warmed to room temperature to dissipate this built-up charge and restore light emission in a subsequent cooldown. Here, we introduce a practical gate voltage protocol that clears this parasitic charge accumulation, in-situ at low temperature, enabling the indefinite cryogenic operation of devices. This reset protocol enabled the optical characterization of stable, bright, dopant-free lateral p-n junctions with electroluminescence linewidths among the narrowest (< 1 meV; < 0.5 nm) reported in this type of device. It also enabled the unambiguous identification of the ground state of neutral free excitons (heavy and light holes), as well as charged excitons (trions). The free exciton emission energies for both photoluminescence and electroluminescence are found to be nearly identical (within 0.2 meV or 0.1 nm). The binding and dissociation energies for free and charged excitons are reported. A free exciton lifetime of 237 ps was measured by time-resolved electroluminescence, compared to 419 ps with time-resolved photoluminescence. △ Less

Submitted 15 August, 2023; v1 submitted 19 June, 2023; originally announced June 2023.

Comments: Main text: 5 pages and 5 figures. Supplementary: 18 pages and 11 figures

Journal ref: Applied Physics Letters 123, 061102 (2023)

Quantum Interference Enhances the Performance of Single-Molecule Transistors

Authors: Zhixin Chen, Iain M. Grace, Steffen L. Woltering, Lina Chen, Alex Gee, Jonathan Baugh, G. Andrew D. Briggs, Lapo Bogani, Jan A. Mol, Colin J. Lambert, Harry L. Anderson, James O. Thomas

Abstract: An unresolved challenge facing electronics at a few-nm scale is that resistive channels start leaking due to quantum tunneling. This affects the performance of nanoscale transistors, with single-molecule devices displaying particularly low switching ratios and operating frequencies, combined with large subthreshold swings.1 The usual strategy to mitigate quantum effects has been to increase device… ▽ More An unresolved challenge facing electronics at a few-nm scale is that resistive channels start leaking due to quantum tunneling. This affects the performance of nanoscale transistors, with single-molecule devices displaying particularly low switching ratios and operating frequencies, combined with large subthreshold swings.1 The usual strategy to mitigate quantum effects has been to increase device complexity, but theory shows that if quantum effects are exploited correctly, they can simultaneously lower energy consumption and boost device performance.2-6 Here, we demonstrate experimentally how the performance of molecular transistors can be improved when the resistive channel contains two destructively-interfering waves. We use a zinc-porphyrin coupled to graphene electrodes in a three-terminal transistor device to demonstrate a >104 conductance-switching ratio, a subthreshold swing at the thermionic limit, a > 7 kHz operating frequency, and stability over >105 cycles. This performance is competitive with the best nanoelectronic transistors. We fully map the antiresonance interference features in conductance, reproduce the behaviour by density functional theory calculations, and trace back this high performance to the coupling between molecular orbitals and graphene edge states. These results demonstrate how the quantum nature of electron transmission at the nanoscale can enhance, rather than degrade, device performance, and highlight directions for future development of miniaturised electronics. △ Less

Submitted 17 April, 2023; originally announced April 2023.

Comments: 11 pages, 4 figures

Field effect two-dimensional electron gases in modulation-doped InSb surface quantum wells

Authors: E. Annelise Bergeron, F. Sfigakis, Y. Shi, George Nichols, P. C. Klipstein, A. Elbaroudy, Sean M. Walker, Z. R. Wasilewski, J. Baugh

Abstract: We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in surface indium antimonide quantum wells. The topmost 5 nm of the 30 nm wide quantum well is doped and shown to promote the formation of reliable, low resistance Ohmic contacts to surface InSb 2DEGs. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus are obser… ▽ More We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in surface indium antimonide quantum wells. The topmost 5 nm of the 30 nm wide quantum well is doped and shown to promote the formation of reliable, low resistance Ohmic contacts to surface InSb 2DEGs. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus are observed to filling factor $ν=1$ in magnetic fields of up to $B=18$ T. We show that the electron density is gate-tunable, reproducible, and stable from pinch-off to 4$\times 10^{11}$ cm$^{-2}$, and peak mobilities exceed 24,000 cm$^2$/Vs. Large Rashba spin-orbit coefficients up to 110 meV$\cdot$Å are obtained through weak anti-localization measurements. An effective mass of 0.019$m_e$ is determined from temperature-dependent magnetoresistance measurements, and a g-factor of 41 at a density of 3.6$\times 10^{11}$ cm$^{-2}$ is obtained from coincidence measurements in tilted magnetic fields. By comparing two heterostructures with and without a delta-doped layer beneath the quantum well, we find that the carrier density is stable with time when do** in the ternary Al$_{0.1}$In$_{0.9}$Sb barrier is not present. Finally, the effect of modulation do** on structural asymmetry between the two heterostructures is characterized. △ Less

Submitted 7 January, 2023; v1 submitted 16 September, 2022; originally announced September 2022.

Comments: Main text 7 pages 4 figures; Supplemental 17 pages 7 figures; added bandstructure simulations and MBE growth details, otherwise minor modifications to previous version

Journal ref: Applied Physics Letters 122, 012103 (2023)

Phase-Coherent Charge Transport through a Porphyrin Nanoribbon

Authors: Zhixin Chen, Jie-Ren Deng, Songjun Hou, Xinya Bian, Jacob L. Swett, Qingqing Wu, Jonathan Baugh, G. Andrew D. Briggs, Jan A. Mol, Colin J. Lambert, Harry L. Anderson, James O. Thomas

Abstract: Quantum interference in nano-electronic devices could lead to reduced-energy computing and efficient thermoelectric energy harvesting. When devices are shrunk down to the molecular level it is still unclear to what extent electron transmission is phase coherent, as molecules usually act as scattering centres, without the possibility of showing particle-wave duality. Here we show electron transmiss… ▽ More Quantum interference in nano-electronic devices could lead to reduced-energy computing and efficient thermoelectric energy harvesting. When devices are shrunk down to the molecular level it is still unclear to what extent electron transmission is phase coherent, as molecules usually act as scattering centres, without the possibility of showing particle-wave duality. Here we show electron transmission remains phase coherent in molecular porphyrin nanoribbons, synthesized with perfectly defined geometry, connected to graphene electrodes. The device acts as a graphene Fabry-Pérot interferometer, allowing direct probing of the transport mechanisms throughout several regimes, including the Kondo one. Electrostatic gating allows measurement of the molecular conductance in multiple molecular oxidation states, demonstrating a thousand-fold increase of the current by interference, and unravelling molecular and graphene transport pathways. These results demonstrate a platform for the use of interferometric effects in single-molecule junctions, opening up new avenues for studying quantum coherence in molecular electronic and spintronic devices. △ Less

Submitted 5 September, 2022; v1 submitted 17 May, 2022; originally announced May 2022.

Comments: 14 pages, 3 figures

Charge-state dependent vibrational relaxation in a single-molecule junction

Authors: Xinya Bian, Zhixin Chen, Jakub K. Sowa, Charalambos Evangeli, Bart Limburg, Jacob L. Swett, Jonathan Baugh, G. Andrew D. Briggs, Harry L. Anderson, Jan A. Mol, James O. Thomas

Abstract: The interplay between nuclear and electronic degrees of freedom strongly influences molecular charge transport. Herein, we report on transport through a porphyrin dimer molecule, weakly coupled to graphene electrodes, that displays sequential tunneling within the Coulomb-blockade regime. The sequential transport is initiated by current-induced phonon absorption and proceeds by rapid sequential tra… ▽ More The interplay between nuclear and electronic degrees of freedom strongly influences molecular charge transport. Herein, we report on transport through a porphyrin dimer molecule, weakly coupled to graphene electrodes, that displays sequential tunneling within the Coulomb-blockade regime. The sequential transport is initiated by current-induced phonon absorption and proceeds by rapid sequential transport via a non-equilibrium vibrational distribution. We demonstrate this is possible only when the vibrational dissipation is slow relative to sequential tunneling rates, and obtain a lower bound for the vibrational relaxation time of 8 ns, a value that is dependent on the molecular charge state. △ Less

Submitted 25 February, 2022; originally announced February 2022.

Comments: 8 pages, 7 figures

Observation and manipulation of a phase separated state in a charge density wave material

Authors: Sean M. Walker, Tarun Patel, Junichi Okamoto, Deler Langenberg, E. Annelise Bergeron, **g**g Gao, Xuan Luo, Wenjian Lu, Yu** Sun, Adam W. Tsen, Jonathan Baugh

Abstract: The 1T polytype of TaS$_\textrm{2}$ has been studied extensively as a strongly correlated system. As 1T-TaS$_\textrm{2}$ is thinned towards the 2D limit, its phase diagram shows significant deviations from that of the bulk material. Optoelectronic maps of ultrathin 1T-TaS$_\textrm{2}$ have indicated the presence of non-equilibrium charge density wave phases within the hysteresis region of the near… ▽ More The 1T polytype of TaS$_\textrm{2}$ has been studied extensively as a strongly correlated system. As 1T-TaS$_\textrm{2}$ is thinned towards the 2D limit, its phase diagram shows significant deviations from that of the bulk material. Optoelectronic maps of ultrathin 1T-TaS$_\textrm{2}$ have indicated the presence of non-equilibrium charge density wave phases within the hysteresis region of the nearly commensurate (NC) to commensurate (C) transition. We perform scanning tunneling microscopy on exfoliated ultrathin flakes of 1T-TaS$_\textrm{2}$ within the NC-C hysteresis window, finding evidence that the observed non-equilibrium phases consist of intertwined, irregularly shaped NC-like and C-like domains. After applying lateral electrical signals to the sample we image changes in the geometric arrangement of the different regions. We use a phase separation model to explore the relationship between electronic inhomogeneity present in ultrathin 1T-TaS$_\textrm{2}$ and its bulk resistivity. These results demonstrate the role of phase competition morphologies in determining the properties of 2D materials. △ Less

Submitted 16 December, 2021; originally announced December 2021.

Comments: 13 pages, 10 figures; supplementary material is appended to main text

Single-electron transport in a molecular Hubbard dimer

Authors: James O. Thomas, Jakub K. Sowa, Bart Limburg, Xinya Bian, Charalambos Evangeli, Jacob L. Swett, Sumit Tewari, Jonathan Baugh, George C. Schatz, G. Andrew D. Briggs, Harry L. Anderson, Jan A. Mol

Abstract: Many-body electron interactions are at the heart of chemistry and solid-state physics. Understanding these interactions is crucial for the development of molecular-scale quantum and nanoelectronic devices. Here, we investigate single-electron tunneling through an edge-fused porphyrin oligomer and demonstrate that its transport behavior is well described by the Hubbard dimer model. This allows us t… ▽ More Many-body electron interactions are at the heart of chemistry and solid-state physics. Understanding these interactions is crucial for the development of molecular-scale quantum and nanoelectronic devices. Here, we investigate single-electron tunneling through an edge-fused porphyrin oligomer and demonstrate that its transport behavior is well described by the Hubbard dimer model. This allows us to study the role of electron-electron interactions in the transport setting. In particular, we empirically determine the molecule's on-site and inter-site electron-electron repulsion energies, which are in good agreement with density functional calculations, and establish the molecular electronic structure within various charge states. The gate-dependent rectification behavior is used to further confirm the selection rules and state degeneracies resulting from the Hubbard model. We therefore demonstrate that current flow through the molecule is governed by a non-trivial set of vibrationally coupled electronic transitions between various many-body states, and experimentally confirm the importance of electron-electron interactions in single-molecule devices. △ Less

Submitted 2 May, 2021; originally announced May 2021.

Comments: 19 pages, 5 figures

Role of dephasing on the conductance signatures of Majorana zero modes

Authors: Chaitrali Duse, Praveen Sriram, Kaveh Gharavi, Jonathan Baugh, Bhaskaran Muralidharan

Abstract: Conductance signatures that signal the presence of Majorana zero modes in a three terminal nanowire-topological superconductor hybrid system are analyzed in detail, in both the clean nanowire limit and in the presence of non-coherent dephasing interactions. In the coherent transport regime for a clean wire, we point out contributions of the local Andreev reflection and the non-local transmissions… ▽ More Conductance signatures that signal the presence of Majorana zero modes in a three terminal nanowire-topological superconductor hybrid system are analyzed in detail, in both the clean nanowire limit and in the presence of non-coherent dephasing interactions. In the coherent transport regime for a clean wire, we point out contributions of the local Andreev reflection and the non-local transmissions toward the total conductance lineshapes while clarifying the role of contact broadening on the Majorana conductance lineshapes at the magnetic field parity crossings. Interestingly, at larger $B$-field parity crossings, the contribution of the Andreev reflection process decreases which is compensated by the non-local processes in order to maintain the conductance quantum regardless of contact coupling strength. In the non-coherent transport regime, we include dephasing that is introduced by momentum randomization processes, that allows one to smoothly transition to the diffusive limit. Here, as expected, we note that while the Majorana character of the zero modes is unchanged, there is a reduction in the conductance peak magnitude that scales with the strength of the impurity scattering potentials. Important distinctions between the effect of non-coherent dephasing processes and contact-induced tunnel broadenings in the coherent regime on the conductance lineshapes are elucidated. Most importantly our results reveal that the addition of dephasing in the set up does not lead to any notable length dependence to the conductance of the zero modes, contrary to what one would expect in a gradual transition to the diffusive limit. We believe this work paves a way for a systematic introduction of scattering processes into the realistic modeling of Majorana nanowire hybrid devices and assessing topological signatures in such systems in the presence of non-coherent scattering processes. △ Less

Submitted 17 April, 2021; v1 submitted 16 March, 2021; originally announced March 2021.

Comments: 17 pages, 14 figures

Non-adiabatic single-electron pump in a dopant-free GaAs/AlGaAs 2DEG

Authors: B. Buonacorsi, F. Sfigakis, A. Shetty, M. C. Tam, H. S. Kim, S. R. Harrigan, F. Hohls, M. E. Reimer, Z. R. Wasilewski, J. Baugh

Abstract: We have realized quantized charge pum** using non-adiabatic single-electron pumps in dopant-free GaAs two-dimensional electron gases (2DEGs). The dopant-free III-V platform allows for ambipolar devices, such as p-i-n junctions, that could be combined with such pumps to form electrically-driven single photon sources. Our pumps operate at up to 0.95 GHz and achieve remarkable performance consideri… ▽ More We have realized quantized charge pum** using non-adiabatic single-electron pumps in dopant-free GaAs two-dimensional electron gases (2DEGs). The dopant-free III-V platform allows for ambipolar devices, such as p-i-n junctions, that could be combined with such pumps to form electrically-driven single photon sources. Our pumps operate at up to 0.95 GHz and achieve remarkable performance considering the relaxed experimental conditions: one-gate pum** in zero magnetic field and temperatures up to 5K, driven by a simple RF sine waveform. Fitting to a universal decay cascade model yields values for the figure of merit $δ$ that compare favorably to reported modulation-doped GaAs pumps operating under similar conditions. The devices reported here are already suitable for optoelectronics applications, and with further improvement could offer a route to a current standard that does not require sub-Kelvin temperatures and high magnetic fields. △ Less

Submitted 16 September, 2021; v1 submitted 26 February, 2021; originally announced February 2021.

Comments: 4 pages + references, 4 figures. Version 3: Updated Figure 2 with higher resolution data. Minor revisions in main text. Conclusions and arguments unchanged. Added Supplementary Material file. Version 2: Main results and analysis unchanged, minor revisions in presentation. Included new figure about fabrication details and expanded relevance of results to quantum optoelectronic applications

Journal ref: Applied Physics Letters 119, 114001 (2021)

Roadmap on quantum nanotechnologies

Authors: Arne Laucht, Frank Hohls, Niels Ubbelohde, M Fernando Gonzalez-Zalba, David J Reilly, Søren Stobbe, Tim Schröder, Pasquale Scarlino, Jonne V Koski, Andrew Dzurak, Chih-Hwan Yang, Jun Yoneda, Ferdinand Kuemmeth, Hendrik Bluhm, Jarryd Pla, Charles Hill, Joe Salfi, Akira Oiwa, Juha T Muhonen, Ewold Verhagen, Matthew D LaHaye, Hyun Ho Kim, Adam W Tsen, Dimitrie Culcer, Attila Geresdi , et al. (4 additional authors not shown)

Abstract: Quantum phenomena are typically observable at length and time scales smaller than those of our everyday experience, often involving individual particles or excitations. The past few decades have seen a revolution in the ability to structure matter at the nanoscale, and experiments at the single particle level have become commonplace. This has opened wide new avenues for exploring and harnessing qu… ▽ More Quantum phenomena are typically observable at length and time scales smaller than those of our everyday experience, often involving individual particles or excitations. The past few decades have seen a revolution in the ability to structure matter at the nanoscale, and experiments at the single particle level have become commonplace. This has opened wide new avenues for exploring and harnessing quantum mechanical effects in condensed matter. These quantum phenomena, in turn, have the potential to revolutionize the way we communicate, compute and probe the nanoscale world. Here, we review developments in key areas of quantum research in light of the nanotechnologies that enable them, with a view to what the future holds. Materials and devices with nanoscale features are used for quantum metrology and sensing, as building blocks for quantum computing, and as sources and detectors for quantum communication. They enable explorations of quantum behaviour and unconventional states in nano- and opto-mechanical systems, low-dimensional systems, molecular devices, nano-plasmonics, quantum electrodynamics, scanning tunnelling microscopy, and more. This rapidly expanding intersection of nanotechnology and quantum science/technology is mutually beneficial to both fields, laying claim to some of the most exciting scientific leaps of the last decade, with more on the horizon. △ Less

Submitted 19 January, 2021; originally announced January 2021.

Comments: Roadmap article with contributed sections and subsections on: 1. Metrology and sensing 2. Quantum light sources, cavities and detectors 3. Quantum computing with spins 4. Nano and opto-mechanics 5. Low-dimensional systems 6. Molecular devices 7. Nanoplasmonics (47 pages, 25 figures). Contains arXiv:1907.02625, arXiv:1907.07087, arXiv:2001.11119, arXiv:2011.13907

Report number: NBI QDev 2021

Journal ref: Nanotechnology 32, 162003 (2021)

Effects of biased and unbiased illuminations on dopant-free GaAs/AlGaAs 2DEGs

Authors: A. Shetty, F. Sfigakis, W. Y. Mak, K. Das Gupta, B. Buonacorsi, M. C. Tam, H. S. Kim, I. Farrer, A. F. Croxall, H. E. Beere, A. R. Hamilton, M. Pepper, D. G. Austing, S. A. Studenikin, A. Sachrajda, M. E. Reimer, Z. R. Wasilewski, D. A. Ritchie, J. Baugh

Abstract: Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs located more than 70 nm away from the surface result in a gain in mobility at a given electron density, primarily driven by the reduction of background i… ▽ More Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs located more than 70 nm away from the surface result in a gain in mobility at a given electron density, primarily driven by the reduction of background impurities. In 2DEGs closer to the surface, unbiased illuminations result in a mobility loss, driven by an increase in surface charge density. Biased illuminations performed with positive applied gate voltages result in a mobility gain, whereas those performed with negative applied voltages result in a mobility loss. The magnitude of the mobility gain (loss) weakens with 2DEG depth, and is likely driven by a reduction (increase) in surface charge density. Remarkably, this mobility gain/loss is fully reversible by performing another biased illumination with the appropriate gate voltage, provided both n-type and p-type ohmic contacts are present. Experimental results are modeled with Boltzmann transport theory, and possible mechanisms are discussed. △ Less

Submitted 21 December, 2021; v1 submitted 28 December, 2020; originally announced December 2020.

Comments: 18 pages, 13 figures; one paragraph rephrased on page 8

Optimizing lateral quantum dot geometries for reduced exchange noise

Authors: Brandon Buonacorsi, Marek Korkusinski, Bohdan Khromets, Jonathan Baugh

Abstract: For electron spin qubits in quantum dots, reducing charge noise sensitivity is a critical step in achieving fault tolerant two-qubit gates mediated by the exchange interaction. This work explores how the physical device geometry affects the sensitivity of exchange to fluctuations in applied gate voltage and interdot bias due to charge noise. We present a modified linear combination of harmonic orb… ▽ More For electron spin qubits in quantum dots, reducing charge noise sensitivity is a critical step in achieving fault tolerant two-qubit gates mediated by the exchange interaction. This work explores how the physical device geometry affects the sensitivity of exchange to fluctuations in applied gate voltage and interdot bias due to charge noise. We present a modified linear combination of harmonic orbitals configuration interaction (LCHO-CI) method for calculating exchange energies that is applicable to general quantum dot networks. In the modified LCHO-CI approach, an orthogonal set of harmonic orbitals formed at the center of the dot network is used to approximate the many-electron states. This choice of basis significantly reduces the computation time of the full CI calculation by enabling a pre-calculated library of matrix elements to be used in evaluating the Coulomb integrals. The resultant many-electron spectra are mapped onto a Heisenberg Hamiltonian to determine the individual pairwise electronic exchange interaction strengths, $J_{ij}$. The accuracy of the modified LCHO-CI method is further improved by optimizing the choice of harmonic orbitals without significantly lengthening the calculation time. The modified LCHO-CI method is used to calculate $J$ for a silicon MOSFET double quantum dot occupied by two electrons. Two-dimensional potential landscapes are calculated from a 3D device structure, including both the Si/SiO$_2$ heterostructure and metal gate electrodes. The computational efficiency of the modified LCHO-CI method enables systematic tuning of the device parameters to determine their impact on the sensitivity of $J$ to charge noise, including plunger gate size, tunnel gate width, SiO$_2$ thickness and dot eccentricity. Generally, we find that geometries with larger dot charging energies, smaller plunger gate lever arms, and symmetric dots are less sensitive to noise. △ Less

Submitted 18 December, 2020; originally announced December 2020.

Comments: 32 pages, 11 figures (including Appendix)

Simulated coherent electron shuttling in silicon quantum dots

Authors: Brandon Buonacorsi, Benjamin Shaw, Jonathan Baugh

Abstract: Shuttling of single electrons in gate-defined silicon quantum dots is numerically simulated. A minimal gate geometry without explicit tunnel barrier gates is introduced, and used to define a chain of accumulation mode quantum dots, each controlled by a single gate voltage. One-dimensional potentials are derived from a three-dimensional electrostatic model, and used to construct an effective Hamilt… ▽ More Shuttling of single electrons in gate-defined silicon quantum dots is numerically simulated. A minimal gate geometry without explicit tunnel barrier gates is introduced, and used to define a chain of accumulation mode quantum dots, each controlled by a single gate voltage. One-dimensional potentials are derived from a three-dimensional electrostatic model, and used to construct an effective Hamiltonian for efficient simulation. Control pulse sequences are designed by maintaining a fixed adiabaticity, so that different shuttling conditions can be systematically compared. We first use these tools to optimize the device geometry for maximum transport velocity, considering only orbital states and neglecting valley and spin degrees of freedom. Taking realistic geometrical constraints into account, charge shuttling speeds up to $\sim$300 m/s preserve adiabaticity. Coherent spin transport is simulated by including spin-orbit and valley terms in an effective Hamiltonian, shuttling one member of a singlet pair and tracking the entanglement fidelity. With realistic device and material parameters, shuttle speeds in the range 10-100 m/s with high spin entanglement fidelities are obtained when the tunneling energy exceeds the Zeeman energy. High fidelity also requires the inter-dot valley phase difference to be below a threshold determined by the ratio of tunneling and Zeeman energies, so that spin-valley-orbit mixing is weak. In this regime, we find that the primary source of infidelity is a coherent spin rotation that is correctable, in principle. The results pertain to proposals for large-scale spin qubit processors in isotopically purified silicon that rely on coherent shuttling of spins to rapidly distribute quantum information between computational nodes. △ Less

Submitted 29 December, 2020; v1 submitted 17 March, 2020; originally announced March 2020.

Comments: 31 pages, 15 figures including Appendix

Journal ref: Phys. Rev. B 102, 125406 (2020)

Self-driven oscillation in Coulomb blockaded suspended carbon nanotubes

Authors: Kyle Willick, Jonathan Baugh

Abstract: Suspended carbon nanotubes are known to support self-driven oscillations due to electromechanical feedback under certain conditions, including low temperatures and high mechanical quality factors. Prior reports identified signatures of such oscillations in Kondo or high-bias transport regimes. Here, we observe self-driven oscillations that give rise to significant conduction in normally Coulomb-bl… ▽ More Suspended carbon nanotubes are known to support self-driven oscillations due to electromechanical feedback under certain conditions, including low temperatures and high mechanical quality factors. Prior reports identified signatures of such oscillations in Kondo or high-bias transport regimes. Here, we observe self-driven oscillations that give rise to significant conduction in normally Coulomb-blockaded low-bias transport. Using a master equation model, the self-driving is shown to result from strongly energy-dependent electron tunneling, and the dependencies of transport features on bias, gate voltage, and temperature are well reproduced. △ Less

Submitted 26 May, 2020; v1 submitted 2 March, 2020; originally announced March 2020.

Comments: Main text + Appendices (8 pages, 10 figures)

Journal ref: Phys. Rev. Research 2, 033040 (2020)

Supercurrent Interference in Semiconductor Nanowire Josephson Junctions

Authors: Praveen Sriram, Sandesh S Kalantre, Kaveh Gharavi, Jonathan Baugh, Bhaskaran Muralidharan

Abstract: Semiconductor-superconductor hybrid systems provide a promising platform for hosting unpaired Majorana fermions towards the realisation of fault-tolerant topological quantum computing. In this study, we employ the Keldysh Non-Equilibrium Green's function formalism to model quantum transport in normal-superconductor junctions. We analyze III-V semiconductor nanowire Josephson junctions (InAs/Nb) us… ▽ More Semiconductor-superconductor hybrid systems provide a promising platform for hosting unpaired Majorana fermions towards the realisation of fault-tolerant topological quantum computing. In this study, we employ the Keldysh Non-Equilibrium Green's function formalism to model quantum transport in normal-superconductor junctions. We analyze III-V semiconductor nanowire Josephson junctions (InAs/Nb) using a three-dimensional discrete lattice model described by the Bogolubov-de Gennes Hamiltonian in the tight-binding approximation, and compute the Andreev bound state spectrum and current-phase relations. Recent experiments [Zuo et al., Phys. Rev. Lett. 119,187704 (2017)] and [Gharavi et al., arXiv:1405.7455v2 (2014)] reveal critical current oscillations in these devices, and our simulations confirm these to be an interference effect of the transverse sub-bands in the nanowire. We add disorder to model coherent scattering and study its effect on the critical current oscillations, with an aim to gain a thorough understanding of the experiments. The oscillations in the disordered junction are highly sensitive to the particular realisation of the random disorder potential, and to the gate voltage. A macroscopic current measurement thus gives us information about the microscopic profile of the junction. Finally, we study dephasing in the channel by including elastic phase-breaking interactions. The oscillations thus obtained are in good qualitative agreement with the experimental data, and this signifies the essential role of phase-breaking processes in III-V semiconductor nanowire Josephson junctions. △ Less

Submitted 14 October, 2019; v1 submitted 28 February, 2019; originally announced February 2019.

Comments: 21 pages, 18 figures, Accepted for publication in Physical Review B

Journal ref: Phys. Rev. B 100, 155431 (2019)

Few-electrode design for silicon MOS quantum dots

Authors: Eduardo B. Ramirez, Francois Sfigakis, Sukanya Kudva, Jonathan Baugh

Abstract: Silicon metal-oxide-semiconductor (MOS) spin qubits have become a promising platform for quantum information processing, with recent demonstrations of high-fidelity single and two-qubit gates. To move beyond a few qubits, however, more scalable designs that reduce the fabrication complexity and electrode density are needed. Here, we introduce a two-metal-layer MOS quantum dot device in which tunne… ▽ More Silicon metal-oxide-semiconductor (MOS) spin qubits have become a promising platform for quantum information processing, with recent demonstrations of high-fidelity single and two-qubit gates. To move beyond a few qubits, however, more scalable designs that reduce the fabrication complexity and electrode density are needed. Here, we introduce a two-metal-layer MOS quantum dot device in which tunnel barriers are naturally formed by gaps between electrodes and controlled by adjacent accumulation gates. The accumulation gates define the electron reservoirs and provide tunability of the tunnel rate of nearly 8.5 decades/V, determined by a combination of charge sensor electron counting measurements and by direct transport. The valley splitting in the few-electron regime is probed by magneto-spectroscopy up to a field of 6 T, providing an estimate for the ground-state gap of 290 $μ$eV. We show preliminary characterization of a double quantum dot, demonstrating that this design can be extended to linear dot arrays that should be useful in applications like electron shuttling. These results motivate further innovations in MOS quantum dot design that can improve the scalability prospects for spin qubits. △ Less

Submitted 19 July, 2019; v1 submitted 22 December, 2018; originally announced December 2018.

Comments: main text + references is 6 pages and contains 5 figures; supplementary material is appended

Journal ref: Semiconductor Science and Technology 35, 015002 (2019)

Understanding resonant charge transport through weakly coupled single-molecule junctions

Authors: James O. Thomas, Bart Limburg, Jakub K. Sowa, Kyle Willick, Jonathan Baugh, G. Andrew D. Briggs, Erik M. Gauger, Harry L. Anderson, Jan A. Mol

Abstract: Off-resonant charge transport through molecular junctions has been extensively studied since the advent of single-molecule electronics and it is now well understood within the framework of the non-interacting Landauer approach. Conversely, gaining a qualitative and quantitative understanding of the resonant transport regime has proven more elusive. Here, we study resonant charge transport through… ▽ More Off-resonant charge transport through molecular junctions has been extensively studied since the advent of single-molecule electronics and it is now well understood within the framework of the non-interacting Landauer approach. Conversely, gaining a qualitative and quantitative understanding of the resonant transport regime has proven more elusive. Here, we study resonant charge transport through graphene-based zinc-porphyrin junctions. We experimentally demonstrate an inadequacy of the non-interacting Landauer theory as well as the conventional single-mode Franck-Condon model. Instead, we model the overall charge transport as a sequence of non-adiabatic electron transfers, the rates of which depend on both outer and inner-sphere vibrational interactions. We show that the transport properties of our molecular junctions are determined by a combination of electron-electron and electron-vibrational coupling, and are sensitive to the interactions with the wider local environment. Furthermore, we assess the importance of nuclear tunnelling and examine the suitability of semi-classical Marcus theory as a description of charge transport in molecular devices. △ Less

Submitted 1 October, 2019; v1 submitted 18 December, 2018; originally announced December 2018.

Comments: version accepted in Nature Communications; SI available at https://researchportal.hw.ac.uk/en/publications/understanding-resonant-charge-transport-through-weakly-coupled-si

Journal ref: Nat. Commun. 10, 4628 (2019)

Network architecture for a topological quantum computer in silicon

Authors: Brandon Buonacorsi, Zhenyu Cai, Eduardo B. Ramirez, Kyle S. Willick, Sean M. Walker, Jiahao Li, Benjamin D. Shaw, Xiaosi Xu, Simon C. Benjamin, Jonathan Baugh

Abstract: A design for a large-scale surface code quantum processor based on a node/network approach is introduced for semiconductor quantum dot spin qubits. The minimal node contains only 7 quantum dots, and nodes are separated on the micron scale, creating useful space for wiring interconnects and integration of conventional transistor circuits. Entanglement is distributed between neighbouring nodes by lo… ▽ More A design for a large-scale surface code quantum processor based on a node/network approach is introduced for semiconductor quantum dot spin qubits. The minimal node contains only 7 quantum dots, and nodes are separated on the micron scale, creating useful space for wiring interconnects and integration of conventional transistor circuits. Entanglement is distributed between neighbouring nodes by loading spin singlets locally and then shuttling one member of the pair through a linear array of empty dots. Each node contains one data qubit, two ancilla qubits, and additional dots to facilitate electron shuttling and measurement of the ancillas. A four-node GHZ state is realized by sharing three internode singlets followed by local gate operations and ancilla measurements. Further local operations and measurements produce an X or Z stabilizer on four data qubits, which is the fundamental operation of the surface code. Electron shuttling is simulated using a simplified gate electrode geometry without explicit barrier gates, and demonstrates that adiabatic transport is possible on timescales that do not present a speed bottleneck to the processor. An important shuttling error in a clean system is uncontrolled phase rotation due to the modulation of the electronic g-factor during transport, owing to the Stark effect. This error can be reduced by appropriate electrostatic tuning of the stationary electron's g-factor. Using reasonable noise models, we estimate error thresholds with respect to single and two-qubit gate fidelities as well as singlet dephasing errors during shuttling. A twirling protocol transforms the non-Pauli noise associated with exchange gate operations into Pauli noise, making it possible to use the Gottesman-Knill theorem to efficiently simulate large codes. △ Less

Submitted 26 November, 2018; v1 submitted 25 July, 2018; originally announced July 2018.

Comments: 35 pages, 16 figures

Journal ref: Quantum Science and Technology, Volume 4, Number 2, 025003 (2019)

Efficient continuous wave noise spectroscopy beyond weak coupling

Authors: Kyle Willick, Daniel K. Park, Jonathan Baugh

Abstract: The optimization of quantum control for physical qubits relies on accurate noise characterization. Probing the spectral density $S(ω)$ of semi-classical phase noise using a spin interacting with a continuous-wave (CW) resonant excitation field has recently gained attention. CW noise spectroscopy protocols have been based on the generalized Bloch equations (GBE) or the filter function formalism, as… ▽ More The optimization of quantum control for physical qubits relies on accurate noise characterization. Probing the spectral density $S(ω)$ of semi-classical phase noise using a spin interacting with a continuous-wave (CW) resonant excitation field has recently gained attention. CW noise spectroscopy protocols have been based on the generalized Bloch equations (GBE) or the filter function formalism, assuming weak coupling to a Markovian bath. However, this standard protocol can substantially underestimate $S(ω)$ at low frequencies when the CW pulse amplitude becomes comparable to $S(ω)$. Here, we derive the coherence decay function more generally by extending it to higher orders in the noise strength and discarding the Markov approximation. Numerical simulations show that this provides a more accurate description of the spin dynamics compared to a simple exponential decay, especially on short timescales. Exploiting these results, we devise a protocol that uses an experiment at a single CW pulse amplitude to extend the spectral range over which $S(ω)$ can be reliably determined to $ω=0$. △ Less

Submitted 26 June, 2018; originally announced June 2018.

Comments: 10 pages, 6 figures

Journal ref: Phys. Rev. A 98, 013414 (2018)

Gradient-based closed-loop quantum optimal control in a solid-state two-qubit system

Authors: Guanru Feng, Franklin H. Cho, Hemant Katiyar, Jun Li, Dawei Lu, Jonathan Baugh, Raymond Laflamme

Abstract: Quantum optimal control can play a crucial role to realize a set of universal quantum logic gates with error rates below the threshold required for fault-tolerance. Open-loop quantum optimal control relies on accurate modeling of the quantum system under control, and does not scale efficiently with system size. These problems can be avoided in closed-loop quantum optimal control, which utilizes fe… ▽ More Quantum optimal control can play a crucial role to realize a set of universal quantum logic gates with error rates below the threshold required for fault-tolerance. Open-loop quantum optimal control relies on accurate modeling of the quantum system under control, and does not scale efficiently with system size. These problems can be avoided in closed-loop quantum optimal control, which utilizes feedback from the system to improve control fidelity. In this paper, two gradient-based closed-loop quantum optimal control algorithms, the hybrid quantum-classical approach (HQCA) described in [Phys. Rev. Lett. 118, 150503 (2017)] and the finite-difference (FD) method, are experimentally investigated and compared to the open-loop quantum optimal control utilizing the gradient ascent method. We employ a solid-state ensemble of coupled electron-nuclear spins serving as a two-qubit system. Specific single-qubit and two-qubit state preparation gates are optimized using the closed-loop and open-loop methods. The experimental results demonstrate the implemented closed-loop quantum control outperforms the open-loop control in our system. Furthermore, simulations reveal that HQCA is more robust than the FD method to gradient noise which originates from measurement noise in this experimental setting. On the other hand, the FD method is more robust to control field distortions coming from non-ideal hardware △ Less

Submitted 10 October, 2018; v1 submitted 29 May, 2018; originally announced May 2018.

Journal ref: Phys. Rev. A 98, 052341 (2018)

Non-equilibrium Green's function study of magneto-conductance features and oscillations in clean and disordered nanowires

Authors: Aritra Lahiri, Kaveh Gharavi, Jonathan Baugh, Bhaskaran Muralidharan

Abstract: We explore various aspects of magneto-conductance oscillations in semiconductor nanowires, develo** quantum transport models based on the non-equilibrium Green's function formalism. In the clean case, Aharonov-Bohm (AB - h/e) oscillations are found to be dominant, contingent upon the surface confinement of electrons in the nanowire. We also numerically study disordered nanowires of finite length… ▽ More We explore various aspects of magneto-conductance oscillations in semiconductor nanowires, develo** quantum transport models based on the non-equilibrium Green's function formalism. In the clean case, Aharonov-Bohm (AB - h/e) oscillations are found to be dominant, contingent upon the surface confinement of electrons in the nanowire. We also numerically study disordered nanowires of finite length, bridging a gap in the existing literature. By varying the nanowire length and disorder strength, we identify the transition where Al'tshuler-Aronov-Spivak (AAS - h/2e) oscillations start dominating, noting the effects of considering an open system. Moreover, we demonstrate how the relative magnitudes of the scattering length and the device dimensions govern the relative dominance of these harmonics with energy, revealing that the AAS oscillations emerge and start dominating from the center of the band, much higher in energy than the conduction band-edge. We also show the ways of suppressing the oscillatory components (AB and AAS) to observe the non-oscillatory weak localization corrections, noting the interplay of scattering, incoherence/dephasing, the geometry of electronic distribution, and orientation of magnetic field. This is followed by a study of surface roughness which shows contrasting effects depending on its strength and type, ranging from magnetic depopulation to strong AAS oscillations. Subsequently, we show that dephasing causes a progressive degradation of the higher harmonics, explaining the re-emergence of the AB component even in long and disordered nanowires. Lastly, we show that our model qualitatively reproduces the experimental magneto-conductance spectrum in [Holloway et al, PRB 91, 045422 (2015)] reasonably well while demonstrating the necessity of spatial-correlations in the disorder potential, and dephasing. △ Less

Submitted 28 August, 2018; v1 submitted 5 September, 2017; originally announced September 2017.

Comments: 15 pages, 18 figures

Journal ref: Phys. Rev. B 98, 125417 (2018)

Fast measurement of carbon nanotube resonator amplitude with a heterojunction bipolar transistor

Authors: Kyle Willick, Xiaowu Tang, Jonathan Baugh

Abstract: Carbon nanotube (CNT) electromechanical resonators have demonstrated unprecedented sensitivities for detecting small masses and forces. The detection speed in a cryogenic setup is usually limited by the CNT contact resistance and parasitic capacitance. We report the use of a heterojunction bipolar transistor (HBT) amplifying circuit near the device to measure the mechanical amplitude at microsecon… ▽ More Carbon nanotube (CNT) electromechanical resonators have demonstrated unprecedented sensitivities for detecting small masses and forces. The detection speed in a cryogenic setup is usually limited by the CNT contact resistance and parasitic capacitance. We report the use of a heterojunction bipolar transistor (HBT) amplifying circuit near the device to measure the mechanical amplitude at microsecond timescales. A Coulomb rectification scheme, in which the probe signal is at much lower frequency than the mechanical drive signal, allows investigation of the strongly non-linear regime. The behaviour of transients in both the linear and non-linear regimes is observed and modeled by including Duffing and non-linear dam** terms in a harmonic oscillator equation. We show that the non-linear regime can result in faster mechanical response times, on the order of 10 microseconds for the device and circuit presented, potentially enabling the magnetic moments of single molecules to be measured within their spin relaxation and dephasing timescales. △ Less

Submitted 10 July, 2017; originally announced July 2017.

Comments: Pages 1-5 are the main paper, pages 6-8 are supplementary material

Journal ref: Appl. Phys. Lett. 111, 223108 (2017)

Enhancing quantum control by bootstrap** a quantum processor of 12 qubits

Authors: Dawei Lu, Keren Li, Jun Li, Hemant Katiyar, Annie Jihyun Park, Guanru Feng, Tao Xin, Hang Li, GuiLu Long, Aharon Brodutch, Jonathan Baugh, Bei Zeng, Raymond Laflamme

Abstract: Accurate and efficient control of quantum systems is one of the central challenges for quantum information processing. Current state-of-the-art experiments rarely go beyond 10 qubits and in most cases demonstrate only limited control. Here we demonstrate control of a 12-qubit system, and show that the system can be employed as a quantum processor to optimize its own control sequence by using measu… ▽ More Accurate and efficient control of quantum systems is one of the central challenges for quantum information processing. Current state-of-the-art experiments rarely go beyond 10 qubits and in most cases demonstrate only limited control. Here we demonstrate control of a 12-qubit system, and show that the system can be employed as a quantum processor to optimize its own control sequence by using measurement-based feedback control (MQFC). The final product is a control sequence for a complex 12-qubit task: preparation of a 12-coherent state. The control sequence is about 10% more accurate than the one generated by the standard (classical) technique, showing that MQFC can correct for unknown imperfections. Apart from demonstrating a high level of control over a relatively large system, our results show that even at the 12-qubit level, a quantum processor can be a useful lab instrument. As an extension of our work, we propose a method for combining the MQFC technique with a twirling protocol, to optimize the control sequence that produces a desired Clifford gate. △ Less

Submitted 26 October, 2017; v1 submitted 4 January, 2017; originally announced January 2017.

Comments: The published version in npj Quantum Information

Journal ref: npj Quantum Information 3, 45 (2017)

A double quantum dot memristor

Authors: Ying Li, Gregory W. Holloway, Simon C. Benjamin, G. Andrew D. Briggs, Jonathan Baugh, Jan A. Mol

Abstract: Memristive systems are generalisations of memristors, which are resistors with memory. In this paper, we present a quantum description of memristive systems. Using this model we propose and experimentally demonstrate a simple and practical scheme for realising memristive systems with quantum dots. The approach harnesses a phenomenon that is commonly seen as a bane of nanoelectronics, i.e. switchin… ▽ More Memristive systems are generalisations of memristors, which are resistors with memory. In this paper, we present a quantum description of memristive systems. Using this model we propose and experimentally demonstrate a simple and practical scheme for realising memristive systems with quantum dots. The approach harnesses a phenomenon that is commonly seen as a bane of nanoelectronics, i.e. switching of a trapped charge in the vicinity of the device. We show that quantum-dot memristive systems have hysteresis current-voltage characteristics and quantum jump induced stochastic behaviour. Realising such a quantum memristor completes the menu of components for quantum circuit design. △ Less

Submitted 8 September, 2017; v1 submitted 26 December, 2016; originally announced December 2016.

Journal ref: Phys. Rev. B 96, 075446 (2017)

Nb/InAs nanowire proximity junctions from Josephson to quantum dot regimes

Authors: Kaveh Gharavi, Gregory W. Holloway, Ray R. LaPierre, Jonathan Baugh

Abstract: The superconducting proximity effect is probed experimentally in Josephson junctions fabricated with InAs nanowires contacted by Nb leads. Contact transparencies $t \sim 0.7$ are observed. The electronic phase coherence length at low temperatures exceeds the channel length. However, the elastic scattering length is a few times shorter than the channel length. Electrical measurements reveal two reg… ▽ More The superconducting proximity effect is probed experimentally in Josephson junctions fabricated with InAs nanowires contacted by Nb leads. Contact transparencies $t \sim 0.7$ are observed. The electronic phase coherence length at low temperatures exceeds the channel length. However, the elastic scattering length is a few times shorter than the channel length. Electrical measurements reveal two regimes of quantum transport: (i) the Josephson regime, characterized by a dissipationless current up to $\sim 100$ nA, and (ii) the quantum dot regime, characterized by the formation of Andreev Bound States (ABS) associated with spontaneous quantum dots inside the nanowire channel. In regime (i), the behaviour of the critical current $I_c$ versus an axial magnetic field $B_{||}$ shows an unexpected modulation and persistence to fields $>2$ T. In the quantum dot regime, the ABS are modelled as the current-biased solutions of an Anderson-type model. The applicability of devices in both transport regimes to Majorana fermion experiments is discussed. △ Less

Submitted 25 November, 2016; originally announced November 2016.

Electrical characterization of chemical and dielectric passivation of InAs nanowires

Authors: Gregory W. Holloway, Chris M. Haapamaki, Paul Kuyanov, Ray R. LaPierre, Jonathan Baugh

Abstract: The native oxide at the surface of III-V nanowires, such as InAs, can be a major source of charge noise and scattering in nanowire-based electronics, particularly for quantum devices operated at low temperatures. Surface passivation provides a means to remove the native oxide and prevent its regrowth. Here, we study the effects of surface passivation and conformal dielectric deposition by measurin… ▽ More The native oxide at the surface of III-V nanowires, such as InAs, can be a major source of charge noise and scattering in nanowire-based electronics, particularly for quantum devices operated at low temperatures. Surface passivation provides a means to remove the native oxide and prevent its regrowth. Here, we study the effects of surface passivation and conformal dielectric deposition by measuring electrical conductance through nanowire field effect transistors treated with a variety of surface preparations. By extracting field effect mobility, subthreshold swing, threshold shift with temperature, and the gate hysteresis for each device, we infer the relative effects of the different treatments on the factors influencing transport. It is found that a combination of chemical passivation followed by deposition of an aluminum oxide dielectric shell yields the best results compared to the other treatments, and comparable to untreated nanowires. Finally, it is shown that an entrenched, top-gated device using an optimally treated nanowire can successfully form a stable double quantum dot at low temperatures. The device has excellent electrostatic tunability owing to the conformal dielectric layer and the combination of local top gates and a global back gate. △ Less

Submitted 2 September, 2016; v1 submitted 4 June, 2016; originally announced June 2016.

Comments: 4 figures, 9 pages. TEM and SEM images added to figures 1 and 4 in new version

Estimating the coherence of noise in quantum control of a solid-state qubit

Authors: Guanru Feng, Joel J. Wallman, Brandon Buonacorsi, Franklin H. Cho, Daniel Park, Tao Xin, Dawei Lu, Jonathan Baugh, Raymond Laflamme

Abstract: To exploit a given physical system for quantum information processing, it is critical to understand the different types of noise affecting quantum control. Distinguishing coherent and incoherent errors is extremely useful as they can be reduced in different ways. Coherent errors are generally easier to reduce at the hardware level, e.g. by improving calibration, whereas some sources of incoherent… ▽ More To exploit a given physical system for quantum information processing, it is critical to understand the different types of noise affecting quantum control. Distinguishing coherent and incoherent errors is extremely useful as they can be reduced in different ways. Coherent errors are generally easier to reduce at the hardware level, e.g. by improving calibration, whereas some sources of incoherent errors, e.g. T2* processes, can be reduced by engineering robust pulses. In this work, we illustrate how purity benchmarking and randomized benchmarking can be used together to distinguish between coherent and incoherent errors and to quantify the reduction in both of them due to using optimal control pulses and accounting for the transfer function in an electron spin resonance system. We also prove that purity benchmarking provides bounds on the optimal fidelity and diamond norm that can be achieved by correcting the coherent errors through improving calibration. △ Less

Submitted 7 December, 2016; v1 submitted 11 March, 2016; originally announced March 2016.

Comments: 14 pages, 13 figures. Accepted for publication in PRL

Journal ref: Phys. Rev. Lett. 117, 260501 (2016)

Readout of Majorana parity states using a quantum dot

Authors: Kaveh Gharavi, Darryl Hoving, Jonathan Baugh

Abstract: We theoretically examine a scheme for projectively reading out the parity state of a pair of Majorana bound states (MBS) using a tunnel coupled quantum dot. The dot is coupled to one end of the topological wire but isolated from any reservoir, and is capacitively coupled to a charge sensor for measurement. The combined parity of the MBS-dot system is conserved and charge transfer between the MBS a… ▽ More We theoretically examine a scheme for projectively reading out the parity state of a pair of Majorana bound states (MBS) using a tunnel coupled quantum dot. The dot is coupled to one end of the topological wire but isolated from any reservoir, and is capacitively coupled to a charge sensor for measurement. The combined parity of the MBS-dot system is conserved and charge transfer between the MBS and dot only occurs through resonant tunnelling. Resonance is controlled by the dot potential through a local gate and by the MBS energy splitting due to the overlap of the MBS pair wavefunctions. The latter splitting can be tuned from zero (topologically protected regime) to a finite value by gate-driven shortening of the topological wire. Simulations show that the oscillatory nature of the MBS splitting is not a fundamental obstacle to readout, but requires precise gate control of the MBS spatial position and dot potential. With experimentally realistic parameters, we find that high-fidelity parity readout is achievable given nanometer-scale spatial control of the MBS, and that there is a tradeoff between required precisions of temporal and spatial control. Use of the scheme to measure the MBS splitting versus separation would present a clear signature of topological order, and could be used to test the robustness of this order to spatial motion, a key requirement in certain schemes for scalable topological qubits. We show how the scheme can be extended to distinguish valid parity measurements from invalid ones due to gate calibration errors. △ Less

Submitted 15 August, 2016; v1 submitted 27 January, 2016; originally announced January 2016.

Comments: 3 figures; added two tables in updated version

Journal ref: Phys. Rev. B 94, 155417 (2016)

Tomography is necessary for universal entanglement detection with single-copy observables

Authors: Dawei Lu, Tao Xin, Nengkun Yu, Zhengfeng Ji, Jianxin Chen, Guilu Long, Jonathan Baugh, Xinhua Peng, Bei Zeng, Raymond Laflamme

Abstract: Entanglement, one of the central mysteries of quantum mechanics, plays an essential role in numerous applications of quantum information theory. A natural question of both theoretical and experimental importance is whether universal entanglement detection is possible without full state tomography. In this work, we prove a no-go theorem that rules out this possibility for any non-adaptive schemes t… ▽ More Entanglement, one of the central mysteries of quantum mechanics, plays an essential role in numerous applications of quantum information theory. A natural question of both theoretical and experimental importance is whether universal entanglement detection is possible without full state tomography. In this work, we prove a no-go theorem that rules out this possibility for any non-adaptive schemes that employ single-copy measurements only. We also examine in detail a previously implemented experiment, which claimed to detect entanglement of two-qubit states via adaptive single-copy measurements without full state tomography. By performing the experiment and analyzing the data, we demonstrate that the information gathered is indeed sufficient to reconstruct the state. These results reveal a fundamental limit for single-copy measurements in entanglement detection, and provides a general framework to study the detection of other interesting properties of quantum states, such as the positivity of partial transpose and the $k$-symmetric extendibility. △ Less

Submitted 2 November, 2015; originally announced November 2015.

Comments: 10 pages, 7 figures, plus 5 pages of supplementary information

Journal ref: Phys. Rev. Lett. 116, 230501 (2016)

Randomized benchmarking of quantum gates implemented by electron spin resonance

Authors: Daniel K. Park, Guanru Feng, Robabeh Rahimi, Jonathan Baugh, Raymond Laflamme

Abstract: Spin systems controlled and probed by magnetic resonance have been valuable for testing the ideas of quantum control and quantum error correction. This paper introduces an X-band pulsed electron spin resonance spectrometer designed for high-fidelity coherent control of electron spins, including a loop-gap resonator for sub-millimeter sized samples with a control bandwidth ~ 40 MHz. Universal contr… ▽ More Spin systems controlled and probed by magnetic resonance have been valuable for testing the ideas of quantum control and quantum error correction. This paper introduces an X-band pulsed electron spin resonance spectrometer designed for high-fidelity coherent control of electron spins, including a loop-gap resonator for sub-millimeter sized samples with a control bandwidth ~ 40 MHz. Universal control is achieved by a single-sideband upconversion technique with an I-Q modulator and a 1.2 GS/s arbitrary waveform generator. A single qubit randomized benchmarking protocol quantifies the average errors of Clifford gates implemented by simple Gaussian pulses, using a sample of gamma-irradiated quartz. Improvements in unitary gate fidelity are achieved through phase transient correction and hardware optimization. A preparation pulse sequence that selects spin packets in a narrowed distribution of static fields confirms that inhomogeneous dephasing (1/T2*) is the dominant source of gate error. The best average fidelity over the Clifford gates obtained here is 99.2%, which serves as a benchmark to compare with other technologies. △ Less

Submitted 21 April, 2016; v1 submitted 16 October, 2015; originally announced October 2015.

Comments: 14 pages, 12 figures. Updated version. Accepted for publication in Journal of Magnetic Resonance

Heat Bath Algorithmic Cooling with Spins: Review and Prospects

Authors: Daniel K. Park, Nayeli A. Rodriguez-Briones, Guanru Feng, Robabeh R. Darabad, Jonathan Baugh, Raymond Laflamme

Abstract: Application of multiple rounds of Quantum Error Correction (QEC) is an essential milestone towards the construction of scalable quantum information processing devices. However, experimental realizations of it are still in their infancy. The requirements for multiple round QEC are high control fidelity and the ability to extract entropy from ancilla qubits. Nuclear Magnetic Resonance (NMR) based qu… ▽ More Application of multiple rounds of Quantum Error Correction (QEC) is an essential milestone towards the construction of scalable quantum information processing devices. However, experimental realizations of it are still in their infancy. The requirements for multiple round QEC are high control fidelity and the ability to extract entropy from ancilla qubits. Nuclear Magnetic Resonance (NMR) based quantum devices have demonstrated high control fidelity with up to 12 qubits. On the other hand, the major challenge in the NMR QEC experiment is to efficiently supply ancilla qubits in highly pure states at the beginning of each round of QEC. Purification of qubits in NMR, or in other ensemble based quantum systems can be accomplished through Heat Bath Algorithmic Cooling (HBAC). It is an efficient method for extracting entropy from qubits that interact with a heat bath, allowing cooling below the bath temperature. For practical HBAC, coupled electron-nuclear spin systems are more promising than conventional NMR quantum processors, since electron spin polarization is about $10^3$ times greater than that of a proton under the same experimental conditions. We provide an overview on both theoretical and experimental aspects of HBAC focusing on spin and magnetic resonance based systems, and discuss the prospects of exploiting electron-nuclear coupled systems for the realization of HBAC and multiple round QEC. △ Less

Submitted 5 January, 2015; originally announced January 2015.

Comments: 26 pages, 17 figures. To appear in Electron Spin Quantum Computing: Electron Spin-Qubit Based Quantum Computing and Quantum Information Processing, Biological Magnetic Resonance Vol. 31 (2015)

Hyperfine spin qubits in irradiated malonic acid: heat-bath algorithmic cooling

Authors: Daniel K. Park, Guanru Feng, Robabeh Rahimi, Stephane Labruyere, Taiki Shibata, Shigeaki Nakazawa, Kazunobu Sato, Takeji Takui, Raymond Laflamme, Jonathan Baugh

Abstract: The ability to perform quantum error correction is a significant hurdle for scalable quantum information processing. A key requirement for multiple-round quantum error correction is the ability to dynamically extract entropy from ancilla qubits. Heat-bath algorithmic cooling is a method that uses quantum logic operations to move entropy from one subsystem to another, and permits cooling of a spin… ▽ More The ability to perform quantum error correction is a significant hurdle for scalable quantum information processing. A key requirement for multiple-round quantum error correction is the ability to dynamically extract entropy from ancilla qubits. Heat-bath algorithmic cooling is a method that uses quantum logic operations to move entropy from one subsystem to another, and permits cooling of a spin qubit below the closed system (Shannon) bound. Gamma-irradiated, $^{13}$C-labeled malonic acid provides up to 5 spin qubits: 1 spin-half electron and 4 spin-half nuclei. The nuclei are strongly hyperfine coupled to the electron and can be controlled either by exploiting the anisotropic part of the hyperfine interaction or by using pulsed electron-nuclear double resonance (ENDOR) techniques. The electron connects the nuclei to a heat-bath with a much colder effective temperature determined by the electron's thermal spin polarization. By accurately determining the full spin Hamiltonian and performing realistic algorithmic simulations, we show that an experimental demonstration of heat-bath algorithmic cooling beyond the Shannon bound is feasible in both 3-qubit and 5-qubit variants of this spin system. Similar techniques could be useful for polarizing nuclei in molecular or crystalline systems that allow for non-equilibrium optical polarization of the electron spin. △ Less

Submitted 13 May, 2015; v1 submitted 31 December, 2014; originally announced January 2015.

Comments: 25 pages, 13 figures, published in Quantum Information Processing, Springer (2015)

Experimental Estimation of Average Fidelity of a Clifford Gate on a 7-qubit Quantum Processor

Authors: Dawei Lu, Hang Li, Denis-Alexandre Trottier, Jun Li, Aharon Brodutch, Anthony P. Krismanich, Ahmad Ghavami, Gary I. Dmitrienko, Guilu Long, Jonathan Baugh, Raymond Laflamme

Abstract: Quantum gates in experiment are inherently prone to errors that need to be characterized before they can be corrected. Full characterization via quantum process tomography is impractical and often unnecessary. For most practical purposes, it is enough to estimate more general quantities such as the average fidelity. Here we use a unitary 2-design and twirling protocol for efficiently estimating th… ▽ More Quantum gates in experiment are inherently prone to errors that need to be characterized before they can be corrected. Full characterization via quantum process tomography is impractical and often unnecessary. For most practical purposes, it is enough to estimate more general quantities such as the average fidelity. Here we use a unitary 2-design and twirling protocol for efficiently estimating the average fidelity of Clifford gates, to certify a 7-qubit entangling gate in a nuclear magnetic resonance quantum processor. Compared with more than $10^8$ experiments required by full process tomography, we conducted 1656 experiments to satisfy a statistical confidence level of 99%. The average fidelity of this Clifford gate in experiment is 55.1%, and rises to 87.5% if the infidelity due to decoherence is removed. The entire protocol of certifying Clifford gates is efficient and scalable, and can easily be extended to any general quantum information processor with minor modifications. △ Less

Submitted 28 November, 2014; originally announced November 2014.

Comments: 5 pages, 2 figures

Journal ref: Phys. Rev. Lett. 114, 140505 (2015)

Orbital Josephson Interference in a Nanowire Proximity Effect Junction

Authors: Kaveh Gharavi, Jonathan Baugh

Abstract: A semiconductor nanowire based superconductor-normal-superconductor (SNS) junction is modeled theoretically. A magnetic field is applied along the nanowire axis, parallel to the current. The Bogoliubov-de Gennes equations for Andreev bound states are solved while considering the electronic subbands due to radial confinement in the N-section. The energy-versus-phase curves of the Andreev bound stat… ▽ More A semiconductor nanowire based superconductor-normal-superconductor (SNS) junction is modeled theoretically. A magnetic field is applied along the nanowire axis, parallel to the current. The Bogoliubov-de Gennes equations for Andreev bound states are solved while considering the electronic subbands due to radial confinement in the N-section. The energy-versus-phase curves of the Andreev bound states shift in phase as the N-section quasiparticles with orbital angular momentum couple to the axial field. A similar phase shift is observed in the continuum current of the junction. The quantum mechanical result is shown to reduce to an intuitive, semi-classical model when the Andreev approximation holds. Numerical calculations of the critical current versus axial field reveal flux-aperiodic oscillations that we identify as a novel form of Josephson interference due to this orbital subband effect. This behavior is studied as a function of junction length and chemical potential. Finally, we discuss extensions to the model that may be useful for describing realistic devices. △ Less

Submitted 29 May, 2015; v1 submitted 11 November, 2014; originally announced November 2014.

Comments: New version contains 7 figures. Appendix on continuum current calculations

Journal ref: Phys. Rev. B 91, 245436 (2015)

Josephson Interference due to Orbital States in a Nanowire Proximity Effect Junction

Authors: Kaveh Gharavi, Gregory W. Holloway, Chris M. Haapamaki, Mohammad H. Ansari, Mustafa Muhammad, Ray R. LaPierre, Jonathan Baugh

Abstract: The Josephson supercurrent in a Nb-InAs nanowire-Nb junction was studied experimentally. The nanowire goes superconducting due to the proximity effect, and can sustain a phase coherent supercurrent. An unexpected modulation of the junction critical current in an axial magnetic field is observed, which we attribute to a novel form of Josephson interference, due to the multi-band nature of the nanow… ▽ More The Josephson supercurrent in a Nb-InAs nanowire-Nb junction was studied experimentally. The nanowire goes superconducting due to the proximity effect, and can sustain a phase coherent supercurrent. An unexpected modulation of the junction critical current in an axial magnetic field is observed, which we attribute to a novel form of Josephson interference, due to the multi-band nature of the nanowire. Andreev pairs occupying states of different orbital angular momentum acquire different superconducting phases, producing oscillations of the critical current versus magnetic flux. We develop a semi-classical multi-band model that reproduces the experimental data well. While spin-orbit and Zeeman effects are predicted to produce similar behaviour, the orbital effects are dominant in the device studied here. This interplay between orbital states and magnetic field should be accounted for in the study of multi-band nanowire Josephson junctions, in particular, regarding the search for signatures of topological superconductivity in such devices. △ Less

Submitted 18 June, 2014; v1 submitted 29 May, 2014; originally announced May 2014.

Comments: Main Text pages 1-7, 3 figures; Supplementary Information pages 8-17, 6 figures. v2 has some references corrected or updated, and a Methods section is included

Chiral Quantum Walks

Authors: DaWei Lu, Jacob D. Biamonte, Jun Li, Hang Li, Tomi H. Johnson, Ville Bergholm, Mauro Faccin, Zoltán Zimborás, Raymond Laflamme, Jonathan Baugh, Seth Lloyd

Abstract: Given its importance to many other areas of physics, from condensed matter physics to thermodynamics, time-reversal symmetry has had relatively little influence on quantum information science. Here we develop a network-based picture of time-reversal theory, classifying Hamiltonians and quantum circuits as time-symmetric or not in terms of the elements and geometries of their underlying networks. M… ▽ More Given its importance to many other areas of physics, from condensed matter physics to thermodynamics, time-reversal symmetry has had relatively little influence on quantum information science. Here we develop a network-based picture of time-reversal theory, classifying Hamiltonians and quantum circuits as time-symmetric or not in terms of the elements and geometries of their underlying networks. Many of the typical circuits of quantum information science are found to exhibit time-asymmetry. Moreover, we show that time-asymmetry in circuits can be controlled using local gates only, and can simulate time-asymmetry in Hamiltonian evolution. We experimentally implement a fundamental example in which controlled time-reversal asymmetry in a palindromic quantum circuit leads to near-perfect transport. Our results pave the way for using time-symmetry breaking to control coherent transport, and imply that time-asymmetry represents an omnipresent yet poorly understood effect in quantum information science. △ Less

Submitted 24 March, 2016; v1 submitted 23 May, 2014; originally announced May 2014.

Comments: 9 pages, 4 figures, REVTeX 4.1 - published version

Journal ref: Phys. Rev. A 93, 042302 (2016)

Sensitive Magnetic Force Detection with a Carbon Nanotube Resonator

Authors: Kyle Willick, Chris Haapamaki, Jonathan Baugh

Abstract: We propose a technique for sensitive magnetic point force detection using a suspended carbon nanotube (CNT) mechanical resonator combined with a magnetic field gradient generated by a ferromagnetic gate electrode. Numerical calculations of the mechanical resonance frequency show that single Bohr magneton changes in the magnetic state of an individual magnetic molecule grafted to the CNT can transl… ▽ More We propose a technique for sensitive magnetic point force detection using a suspended carbon nanotube (CNT) mechanical resonator combined with a magnetic field gradient generated by a ferromagnetic gate electrode. Numerical calculations of the mechanical resonance frequency show that single Bohr magneton changes in the magnetic state of an individual magnetic molecule grafted to the CNT can translate to detectable frequency shifts, on the order of a few kHz. The dependences of the resonator response to device parameters such as length, tension, CNT diameter, and gate voltage are explored and optimal operating conditions are identified. A signal-to-noise analysis shows that in principle, magnetic switching at the level of a single Bohr magneton can be read out in a single shot on timescales as short as 10 microseconds. This force sensor should enable new studies of spin dynamics in isolated single molecule magnets, free from the crystalline or ensemble settings typically studied. △ Less

Submitted 26 February, 2014; originally announced February 2014.

Comments: Pages 1-6 are the main paper, pages 7-11 are supplementary material

Journal ref: J. Appl. Phys. 115, 114501 (2014)

Qubit noise spectroscopy using a continuous driving field

Authors: Daniel K. Park, Jonathan Baugh

Abstract: The optimization of dynamical decoupling and quantum error correction for a particular qubit realization is based on a detailed knowledge of the noise properties. Spectroscopy of single-axis noise using dynamical decoupling pulse sequences has garnered much recent attention. Here we consider noise spectroscopy based on a spin-locking type pulse sequence, i.e. a continuous-wave (CW) on-resonance dr… ▽ More The optimization of dynamical decoupling and quantum error correction for a particular qubit realization is based on a detailed knowledge of the noise properties. Spectroscopy of single-axis noise using dynamical decoupling pulse sequences has garnered much recent attention. Here we consider noise spectroscopy based on a spin-locking type pulse sequence, i.e. a continuous-wave (CW) on-resonance driving field. We show that a heuristic filter function approach produces a qualitatively correct (but quantitatively incorrect) result, whereas a 0th-order average Hamiltonian calculation is shown to agree with the result predicted by the generalized Bloch equations. We further calculate up to 2nd-order average Hamiltonian corrections and show the deviation from the generalized Bloch equation result. This shows that noise spectroscopy using continuous fields, in some cases simpler to implement and more robust to errors than pulsed schemes, can be rigorously analyzed and criteria for reliable measurements can be established. Finally, a solid-state nuclear magnetic resonance experiment is presented which demonstrates that the CW and pulsed methods agree within experimental error. The noise, due to magnetization fluctuations in a dipolar coupled proton spin bath, is found to obey a roughly 1/ω power law decay in the range of frequencies ω investigated. △ Less

Submitted 21 January, 2014; v1 submitted 28 August, 2013; originally announced August 2013.

Comments: This paper has been withdrawn by the author due to an error in Eqn. (23). An updated version will soon be available

Magnetoconductance signatures of subband structure in semiconductor nanowires

Authors: Gregory W. Holloway, Daryoush Shiri, Chris M. Haapamaki, Kyle Willick, Grant Watson, Ray R. LaPierre, Jonathan Baugh

Abstract: The radial confining potential in a semiconductor nanowire plays a key role in determining its quantum transport properties. Previous reports have shown that an axial magnetic field induces flux-periodic conductance oscillations when the electronic states are confined to a shell. This effect is due to the coupling of orbital angular momentum to the magnetic flux. Here, we perform calculations of t… ▽ More The radial confining potential in a semiconductor nanowire plays a key role in determining its quantum transport properties. Previous reports have shown that an axial magnetic field induces flux-periodic conductance oscillations when the electronic states are confined to a shell. This effect is due to the coupling of orbital angular momentum to the magnetic flux. Here, we perform calculations of the energy level structure, and consequently the conductance, for more general cases ranging from a flat potential to strong surface band bending. The transverse states are not confined to a shell, but are distributed across the nanowire. It is found that, in general, the subband energy spectrum is aperiodic as a function of both gate voltage and magnetic field. In principle, this allows for precise identification of the occupied subbands from the magnetoconductance patterns of quasi-ballistic devices. The aperiodicity becomes more apparent as the potential flattens. A quantitative method is introduced for matching features in the conductance data to the subband structure resulting from a particular radial potential, where a functional form for the potential is used that depends on two free parameters. Finally, a short-channel InAs nanowire FET device is measured at low temperature in search of conductance features that reveal the subband structure. Features are identified and shown to be consistent with three specific subbands. The experiment is analyzed in the context of the weak localization regime, however, we find that the subband effects predicted for ballistic transport should remain visible when back scattering dominates over interband scattering, as is expected for this device. △ Less

Submitted 17 November, 2014; v1 submitted 23 May, 2013; originally announced May 2013.

Comments: 8 pages, 3 figures; revised version (Nov. 2014)

Journal ref: Phys. Rev. B 91, 045422 (2015)

Few-Qubit Magnetic Resonance Quantum Information Processors: Simulating Chemistry and Physics

Authors: Ben Criger, Daniel K. Park, Jonathan Baugh

Abstract: We review recent progress made in quantum information processing (QIP) which can be applied in the simulation of quantum systems and chemical phenomena. The review is focused on quantum algorithms which are useful for quantum simulation of chemistry and advances in nuclear magnetic resonance (NMR) and electron spin resonance (ESR) QIP. Discussions also include a number of recent experiments demons… ▽ More We review recent progress made in quantum information processing (QIP) which can be applied in the simulation of quantum systems and chemical phenomena. The review is focused on quantum algorithms which are useful for quantum simulation of chemistry and advances in nuclear magnetic resonance (NMR) and electron spin resonance (ESR) QIP. Discussions also include a number of recent experiments demonstrating the current capabilities of the NMR QIP for quantum simulation and prospects for spin-based implementations of QIP. △ Less

Submitted 17 October, 2012; originally announced October 2012.

Comments: 47 pages, 9 figures. To appear in Adv. Chem. Phys., special issue on Quantum Information and Computation for Chemistry

Temperature-dependent electron mobility in InAs nanowires

Authors: Nupur Gupta, Yipu Song, Gregory W. Holloway, Urbasi Sinha, Chris Haapamaki, Ray R. LaPierre, Jonathan Baugh

Abstract: Effective electron mobilities are obtained by transport measurements on InAs nanowire field-effect transistors at temperatures ranging from 10-200 K. The mobility increases with temperature below ~ 30 - 50 K, and then decreases with temperature above 50 K, consistent with other reports. The magnitude and temperature dependence of the observed mobility can be explained by Coulomb scattering from io… ▽ More Effective electron mobilities are obtained by transport measurements on InAs nanowire field-effect transistors at temperatures ranging from 10-200 K. The mobility increases with temperature below ~ 30 - 50 K, and then decreases with temperature above 50 K, consistent with other reports. The magnitude and temperature dependence of the observed mobility can be explained by Coulomb scattering from ionized surface states at typical densities. The behaviour above 50 K is ascribed to the thermally activated increase in the number of scatterers, although nanoscale confinement also plays a role as higher radial subbands are populated, leading to interband scattering and a shift of the carrier distribution closer to the surface. Scattering rate calculations using finite-element simulations of the nanowire transistor confirm that these mechanisms are able to explain the data. △ Less

Submitted 23 May, 2013; v1 submitted 12 October, 2012; originally announced October 2012.

Comments: 19 pages, 7 figures

Journal ref: Nanotechnology 24, 225202 (2013)

Critical shell thickness for InAs-Al$_x$In$_{1-x}$As(P) core-shell nanowires

Authors: C. M. Haapamaki, J. Baugh, R. R. LaPierre

Abstract: InAs nanowires with Al$_x$In$_{1-x}$P or Al$x$In$_{1-x}$As shells were grown on GaAs substrates by the Au-assisted vapour-liquid-solid (VLS) method in a gas source molecular beam epitaxy (GS-MBE) system. Core diameters and shell thicknesses were measured by transmission electron microscopy (TEM). These measurements were then related to selected area diffraction (SAD) patterns to verify either inte… ▽ More InAs nanowires with Al$_x$In$_{1-x}$P or Al$x$In$_{1-x}$As shells were grown on GaAs substrates by the Au-assisted vapour-liquid-solid (VLS) method in a gas source molecular beam epitaxy (GS-MBE) system. Core diameters and shell thicknesses were measured by transmission electron microscopy (TEM). These measurements were then related to selected area diffraction (SAD) patterns to verify either interface coherency or relaxation through misfit dislocations. A theoretical strain model is presented to determine the critical shell thickness for given core diameters. Zincblende stiffness parameters are transformed to their wurtzite counterparts via a well known tensor transformation. An energy criterion is then given to determine the shell thickness at which coherency is lost and dislocations become favourable. △ Less

Submitted 19 September, 2012; originally announced September 2012.

Journal ref: Journal of Applied Physics 112 124305 (2012)

Trapped charge dynamics in InAs nanowires

Authors: Gregory W. Holloway, Yipu Song, Chris M. Haapamaki, Ray R. LaPierre, Jonathan Baugh

Abstract: We study random telegraph noise in the conductance of InAs nanowire field-effect transistors due to single electron trap** in defects. The electron capture and emission times are measured as functions of temperature and gate voltage for individual traps, and are consistent with traps residing in the few-nanometer-thick native oxide, with a Coulomb barrier to trap**. These results suggest that… ▽ More We study random telegraph noise in the conductance of InAs nanowire field-effect transistors due to single electron trap** in defects. The electron capture and emission times are measured as functions of temperature and gate voltage for individual traps, and are consistent with traps residing in the few-nanometer-thick native oxide, with a Coulomb barrier to trap**. These results suggest that oxide removal from the nanowire surface, with proper passivation to prevent regrowth, should lead to the reduction or elimination of random telegraph noise, an important obstacle for sensitive experiments at the single electron level. △ Less

Submitted 11 October, 2012; v1 submitted 14 September, 2012; originally announced September 2012.

Comments: 12 pages, 4 figures. New version includes a slightly modified charge trap model and minor corrections

Journal ref: J. Appl. Phys. 113, 024511 (2013)

Electron Transport in InAs-InAlAs Core-Shell Nanowires

Authors: Gregory W. Holloway, Yipu Song, Chris M. Haapamaki, Ray R. LaPierre, Jonathan Baugh

Abstract: Evidence is given for the effectiveness of InAs surface passivation by the growth of an epitaxial InAlAs shell. The electron mobility is measured as a function of temperature for both core-shell and unpassivated nanowires, with the core-shell nanowires showing a monotonic increase in mobility as temperature is lowered, in contrast to a turnover in mobility seen for the unpassivated nanowires. We a… ▽ More Evidence is given for the effectiveness of InAs surface passivation by the growth of an epitaxial InAlAs shell. The electron mobility is measured as a function of temperature for both core-shell and unpassivated nanowires, with the core-shell nanowires showing a monotonic increase in mobility as temperature is lowered, in contrast to a turnover in mobility seen for the unpassivated nanowires. We argue that this signifies a reduction in low temperature ionized impurity scattering for the passivated nanowires, implying a reduction in surface states. △ Less

Submitted 10 September, 2014; v1 submitted 12 September, 2012; originally announced September 2012.

Comments: 12 pages, 4 figures; newest version has reference numbers corrected

Journal ref: Applied Physics Letters 102, 043115 (2013)

Structural Investigation of InAs-AlInAs and InAs-AlInP Core-Shell Nanowires

Authors: C. M. Haapamaki, J. Baugh, R. R. LaPierre

Abstract: InAs nanowires were grown on GaAs substrates by the Au-assisted vapour-liquid-solid (VLS) method in a gas source molecular beam epitaxy (GS-MBE) system. Passivation of the InAs nanowires using InP shells proved difficult due to the tendency for the formation of axial rather than core-shell structures. To circumvent this issue, Al$_x$In$_{1-x}$As or Al$_x$In$_{1-x}$P shells with nominal Al composit… ▽ More InAs nanowires were grown on GaAs substrates by the Au-assisted vapour-liquid-solid (VLS) method in a gas source molecular beam epitaxy (GS-MBE) system. Passivation of the InAs nanowires using InP shells proved difficult due to the tendency for the formation of axial rather than core-shell structures. To circumvent this issue, Al$_x$In$_{1-x}$As or Al$_x$In$_{1-x}$P shells with nominal Al composition fraction of x = 0.20, 0.36, or 0.53 were grown by direct vapour-solid deposition on the sidewalls of the InAs nanowires. Characterization by transmission electron microscopy revealed that the addition of Al in the shell resulted in a remarkable transition from the VLS to the vapour-solid growth mode with uniform shell thickness along the nanowire length. Possible mechanisms for this transition include reduced adatom diffusion, a phase change of the Au seed particle and surfactant effects. The InAs-AlInP core-shell nanowires exhibited misfit dislocations, while the InAs-AlInAs nanowires with lower strain appeared to be free of defects. △ Less

Submitted 30 November, 2011; originally announced November 2011.

Journal ref: Journal of Crystal Growth, 354 (2012) p11-15