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Spin-orbit readout using thin films of topological insulator Sb2Te3 deposited by industrial magnetron sputtering
Authors:
S. Teresi,
N. Sebe,
T. Frottier,
J. Patterson,
A. Kandazoglou,
P. Noël,
P. Sgarro,
D. Térébénec,
N. Bernier,
F. Hippert,
J. -P. Attané,
L. Vila,
P. Noé,
M. Cosset-Chéneau
Abstract:
Driving a spin-logic circuit requires the production of a large output signal by spin-charge interconversion in spin-orbit readout devices. This should be possible by using topological insulators, which are known for their high spin-charge interconversion efficiency. However, high-quality topological insulators have so far only been obtained on a small scale, or with large scale deposition techniq…
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Driving a spin-logic circuit requires the production of a large output signal by spin-charge interconversion in spin-orbit readout devices. This should be possible by using topological insulators, which are known for their high spin-charge interconversion efficiency. However, high-quality topological insulators have so far only been obtained on a small scale, or with large scale deposition techniques which are not compatible with conventional industrial deposition processes. The nanopatterning and electrical spin injection into these materials has also proven difficult due to their fragile structure and low spin conductance. We present the fabrication of a spin-orbit readout device from the topological insulator Sb2Te3 deposited by large-scale industrial magnetron sputtering on SiO2. Despite a modification of the Sb2Te3 layer structural properties during the device nanofabrication, we measured a sizeable output voltage that can be unambiguously ascribed to a spin-charge interconversion process.
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Submitted 23 June, 2023; v1 submitted 18 April, 2023;
originally announced April 2023.
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Electrical measurement of the Spin Hall Effect isotropy in a ferromagnet
Authors:
M. Cosset-Chéneau,
M. Husien Fahmy,
A. Kandazoglou,
C. Grezes,
A. Brenac,
S. Teresi,
P. Sgarro,
P. Warin,
A. Marty,
V. T. Pham,
J. -P. Attané,
L. Vila
Abstract:
The spin-dependent transport properties of paramagnetic metals are roughly invariant under rotation. By contrast, in ferromagnetic materials the magnetization breaks the rotational symmetry, and thus the spin Hall effect is expected to become anisotropic. Here, using a specific design of lateral spin valves, we measure electrically the spin Hall Effect anisotropy in NiCu and NiPd, both in their fe…
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The spin-dependent transport properties of paramagnetic metals are roughly invariant under rotation. By contrast, in ferromagnetic materials the magnetization breaks the rotational symmetry, and thus the spin Hall effect is expected to become anisotropic. Here, using a specific design of lateral spin valves, we measure electrically the spin Hall Effect anisotropy in NiCu and NiPd, both in their ferromagnetic and paramagnetic phases. We show that the appearance of the ferromagnetic order does not lead to a sizeable anisotropy of the spin charge interconversion in these materials.
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Submitted 23 June, 2023; v1 submitted 31 May, 2022;
originally announced May 2022.
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Spin dependent transport characterization in metallic lateral spin valves using 1D and 3D modeling
Authors:
P. Laczkowski,
M. Cosset-Cheneau,
W. Savero-Torres,
V. T. Pham,
H. Jaffrès,
N. Reyren,
J. -C. Rojas-Sànchez,
A. Marty,
L. Vila,
J. -M. George,
J. -P. Attané
Abstract:
We present the analysis of the spin signals obtained in NiFe based metallic lateral spin valves. We exploit the spin dependent diffusive equations in both the conventional 1D analytic modeling as well as in 3D Finite Element Method simulations. Both approaches are used for extracting the spin diffusion length $l_{sf}^{N}$ and the effective spin polarization $P_{eff}$ in Py/Al, Py/Cu and Py/Au base…
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We present the analysis of the spin signals obtained in NiFe based metallic lateral spin valves. We exploit the spin dependent diffusive equations in both the conventional 1D analytic modeling as well as in 3D Finite Element Method simulations. Both approaches are used for extracting the spin diffusion length $l_{sf}^{N}$ and the effective spin polarization $P_{eff}$ in Py/Al, Py/Cu and Py/Au based lateral nano-structures at both $300\,K$ and $77\,K$. Both the analytic modeling and 3D Finite Element Method simulations give consistent results. Combination of both models provides a powerful tool for reliable spin transport characterization in all metallic spin valves and gives an insight into the spin/charge current and spin accumulations 3D distributions in these devices. We provide the necessary ingredients to develop the 3D finite element modeling of diffusive spin transport.
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Submitted 18 March, 2019; v1 submitted 6 March, 2019;
originally announced March 2019.
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Large enhancement of the spin Hall effect in Au by scattering with side-jump on Ta impurities
Authors:
P. Laczkowski,
Y. Fu,
H. Yang,
J. -C. Rojas-Sánchez,
P. Noel,
V. T. Pham,
G. Zahnd,
C. Deranlot,
S. Collin,
C. Bouard,
P. Warin,
V. Maurel,
M. Chshiev,
A. Marty,
J. -P. Attané,
A. Fert,
H. Jaffrès,
L. Vila,
J. -M. George
Abstract:
We present measurements of the Spin Hall Effect (SHE) in AuW and AuTa alloys for a large range of W or Ta concentrations by combining experiments on lateral spin valves and Ferromagnetic-Resonance/spin pum** technique. The main result is the identification of a large enhancement of the Spin Hall Angle (SHA) by the side-jump mechanism on Ta impurities, with a SHA as high as + 0.5 (i.e $50\%$) for…
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We present measurements of the Spin Hall Effect (SHE) in AuW and AuTa alloys for a large range of W or Ta concentrations by combining experiments on lateral spin valves and Ferromagnetic-Resonance/spin pum** technique. The main result is the identification of a large enhancement of the Spin Hall Angle (SHA) by the side-jump mechanism on Ta impurities, with a SHA as high as + 0.5 (i.e $50\%$) for about 10\% of Ta. In contrast the SHA in AuW does not exceed + 0.15 and can be explained by intrinsic SHE of the alloy without significant extrinsic contribution from skew or side-jump scattering by W impurities. The AuTa alloys, as they combine a very large SHA with a moderate resistivity (smaller than $85\,μΩ.cm$), are promising for spintronic devices exploiting the SHE.
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Submitted 30 August, 2017;
originally announced August 2017.
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Highly efficient and tuneable spin-to-charge conversion through Rashba coupling at oxide interfaces
Authors:
E. Lesne,
Y. Fu,
S. Oyarzun,
J. C. Rojas-Sanchez,
D. C. Vaz,
H. Naganuma,
G. Sicoli,
J. -P. Attane,
M. Jamet,
E. Jacquet,
J. -M. George,
A. Barthelemy,
H. Jaffres,
A. Fert,
M. Bibes,
L. Vila
Abstract:
The spin-orbit interaction couples the electrons' motion to their spin. Accordingly, passing a current in a material with strong spin-orbit coupling generates a transverse spin current (spin Hall effect, SHE) and vice-versa (inverse spin Hall effect, ISHE). The emergence of SHE and ISHE as charge-to-spin interconversion mechanisms offers a variety of novel spintronics functionalities and devices,…
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The spin-orbit interaction couples the electrons' motion to their spin. Accordingly, passing a current in a material with strong spin-orbit coupling generates a transverse spin current (spin Hall effect, SHE) and vice-versa (inverse spin Hall effect, ISHE). The emergence of SHE and ISHE as charge-to-spin interconversion mechanisms offers a variety of novel spintronics functionalities and devices, some of which do not require any ferromagnetic material. However, the interconversion efficiency of SHE and ISHE (spin Hall angle) is a bulk property that rarely exceeds ten percent, and does not take advantage of interfacial and low-dimensional effects otherwise ubiquitous in spintronics hetero- and mesostructures. Here, we make use of an interface-driven spin-orbit coupling mechanism - the Rashba effect - in the oxide two-dimensional electron system (2DES) LaAlO3/SrTiO3 to achieve spin-to-charge conversion with unprecedented efficiency. Through spin-pum**, we inject a spin current from a NiFe film into the oxide 2DES and detect the resulting charge current, which can be strongly modulated by a gate voltage. We discuss the amplitude of the effect and its gate dependence on the basis of the electronic structure of the 2DES.
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Submitted 21 September, 2016;
originally announced September 2016.
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Evaluation of the spin diffusion length of AuW alloy by spin absorption experiments in the limit of large spin-orbit interactions
Authors:
P. Laczkowski,
H. Jaffrès,
W. Savero-Torres,
J. -C. Rojas-Sánchez,
Y. Fu,
N. Reyren,
C. Deranlot,
L. Notin,
C. Beigné,
J. -P. Attané,
L. Vila,
J. -M. George,
A. Marty
Abstract:
The knowledge of the spin diffusion length $λ_{A}$ is a prerequisite for the estimation of the spin Hall angle. We investigate spin current absorption of materials with small $λ_{A}$ using AuW stripes inserted in lateral spin-valves. Width variations of the AuW stripe lead to drastic changes of the spin absorption, which cannot be explained by conventional analysis. We show that the spin-current p…
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The knowledge of the spin diffusion length $λ_{A}$ is a prerequisite for the estimation of the spin Hall angle. We investigate spin current absorption of materials with small $λ_{A}$ using AuW stripes inserted in lateral spin-valves. Width variations of the AuW stripe lead to drastic changes of the spin absorption, which cannot be explained by conventional analysis. We show that the spin-current polarization and the spin accumulation attenuation in the vicinity of the spin absorber must to be precisely taken into account for accurate estimation of $λ_{A}$. We propose an analytical model supported by numerical calculations that allows to extract proper $λ_{A}$ values of spin Hall effect materials.
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Submitted 27 October, 2015; v1 submitted 16 July, 2015;
originally announced July 2015.
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Comparison of the use of NiFe and CoFe as electrodes for metallic lateral spin-valves
Authors:
G. Zahnd,
L. Vila,
T. V. Pham,
A. Marty,
P. Laczkowski,
W. Savero Torres,
C. Beigné,
C. Vergnaud,
M. Jamet,
J. -P. Attané
Abstract:
Spin injection and detection in Co60Fe40-based all-metallic lateral spin-valves have been studied at both room and low temperatures. The obtained spin signals amplitudes have been compared to that of identical Ni80Fe20-based devices. The replacement of Ni80Fe20 by CoFe allows increasing the spin signal amplitude by up to one order of magnitude, thus reaching 50 mΩ at room temperature. The spin sig…
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Spin injection and detection in Co60Fe40-based all-metallic lateral spin-valves have been studied at both room and low temperatures. The obtained spin signals amplitudes have been compared to that of identical Ni80Fe20-based devices. The replacement of Ni80Fe20 by CoFe allows increasing the spin signal amplitude by up to one order of magnitude, thus reaching 50 mΩ at room temperature. The spin signal dependence with the distance between the ferromagnetic electrodes has been analyzed using both a 1D spin transport model and finite elements method simulations. The enhancement of the spin signal amplitude when using CoFe electrodes can be explained by a higher effective polarization.
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Submitted 12 November, 2015; v1 submitted 3 July, 2015;
originally announced July 2015.
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Experimental evidences of a large extrinsic spin Hall effect in AuW alloy
Authors:
P. Laczkowski,
J. -C. Rojas-Sánchez,
W. Savero-Torres,
H. Jaffrès,
N. Reyren,
C. Deranlot,
L. Notin,
C. Beigné,
A. Marty,
J. -P. Attané,
L. Vila,
J. -M. George,
A. Fert
Abstract:
We report an experimental study of a gold-tungsten alloy (7% at. W concentration in Au host) displaying remarkable properties for spintronics applications using both magneto-transport in lateral spin valve devices and spin-pum** with inverse spin Hall effect experiments. A very large spin Hall angle of about 10% is consistently found using both techniques with the reliable spin diffusion length…
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We report an experimental study of a gold-tungsten alloy (7% at. W concentration in Au host) displaying remarkable properties for spintronics applications using both magneto-transport in lateral spin valve devices and spin-pum** with inverse spin Hall effect experiments. A very large spin Hall angle of about 10% is consistently found using both techniques with the reliable spin diffusion length of 2 nm estimated by the spin sink experiments in the lateral spin valves. With its chemical stability, high resistivity and small induced dam**, this AuW alloy may find applications in the nearest future.
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Submitted 22 August, 2014; v1 submitted 27 March, 2014;
originally announced March 2014.
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Spin Pum** and Inverse Spin Hall Effect in Platinum: The Essential Role of Spin-Memory Loss at Metallic Interfaces
Authors:
J. -C. Rojas-Sánchez,
N. Reyren,
P. Laczkowski,
W. Savero,
J. -P. Attané,
C. Deranlot,
M. Jamet,
J. -M. George,
L. Vila,
H. Jaffrès
Abstract:
Through combined ferromagnetic resonance, spin-pum** and inverse spin Hall effect experiments in Co|Pt bilayers and Co|Cu|Pt trilayers, we demonstrate consistent values of spin diffusion length $\ell_{\rm sf}^{\rm Pt}=3.4\pm0.4$ nm and of spin Hall angle $θ_{\rm SHE}^{\rm Pt}=0.051\pm0.004$ for Pt. Our data and model emphasize on the partial depolarization of the spin current at each interface d…
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Through combined ferromagnetic resonance, spin-pum** and inverse spin Hall effect experiments in Co|Pt bilayers and Co|Cu|Pt trilayers, we demonstrate consistent values of spin diffusion length $\ell_{\rm sf}^{\rm Pt}=3.4\pm0.4$ nm and of spin Hall angle $θ_{\rm SHE}^{\rm Pt}=0.051\pm0.004$ for Pt. Our data and model emphasize on the partial depolarization of the spin current at each interface due to spin-memory loss. Our model reconciles the previously published spin Hall angle values and explains the different scaling lengths for the ferromagnetic dam** and the spin Hall effect induced voltage.
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Submitted 17 March, 2014; v1 submitted 10 December, 2013;
originally announced December 2013.
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Spin Pum** and Inverse Spin Hall Effect in Germanium
Authors:
J. -C. Rojas-Sánchez,
M. Cubukcu,
A. Jain,
C. Vergnaud,
C. Portemont,
C. Ducruet,
A. Barski,
A. Marty,
L. Vila,
J. -P. Attané,
E. Augendre,
G. Desfonds,
S. Gambarelli,
H. Jaffrès,
J. -M. George,
M. Jamet
Abstract:
We have measured the inverse spin Hall effect (ISHE) in \textit{n}-Ge at room temperature. The spin current in germanium was generated by spin pum** from a CoFeB/MgO magnetic tunnel junction in order to prevent the impedance mismatch issue. A clear electromotive force was measured in Ge at the ferromagnetic resonance of CoFeB. The same study was then carried out on several test samples, in parti…
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We have measured the inverse spin Hall effect (ISHE) in \textit{n}-Ge at room temperature. The spin current in germanium was generated by spin pum** from a CoFeB/MgO magnetic tunnel junction in order to prevent the impedance mismatch issue. A clear electromotive force was measured in Ge at the ferromagnetic resonance of CoFeB. The same study was then carried out on several test samples, in particular we have investigated the influence of the MgO tunnel barrier and sample annealing on the ISHE signal. First, the reference CoFeB/MgO bilayer grown on SiO$_{2}$ exhibits a clear electromotive force due to anisotropic magnetoresistance and anomalous Hall effect which is dominated by an asymmetric contribution with respect to the resonance field. We also found that the MgO tunnel barrier is essential to observe ISHE in Ge and that sample annealing systematically lead to an increase of the signal. We propose a theoretical model based on the presence of localized states at the interface between the MgO tunnel barrier and Ge to account for these observations. Finally, all of our results are fully consistent with the observation of ISHE in heavily doped $n$-Ge and we could estimate the spin Hall angle at room temperature to be $\approx$0.001.
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Submitted 12 May, 2013;
originally announced May 2013.
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Electrical and thermal spin accumulation in germanium
Authors:
A. Jain,
C. Vergnaud,
J. Peiro,
J. C. Le Breton,
E. Prestat,
L. Louahadj,
C. Portemont,
C. Ducruet,
V. Baltz,
A. Marty,
A. Barski,
P. Bayle-Guillemaud,
L. Vila,
J. -P. Attané,
E. Augendre,
H. Jaffrès,
J. -M. George,
M. Jamet
Abstract:
In this letter, we first show electrical spin injection in the germanium conduction band at room temperature and modulate the spin signal by applying a gate voltage to the channel. The corresponding signal modulation agrees well with the predictions of spin diffusion models. Then by setting a temperature gradient between germanium and the ferromagnet, we create a thermal spin accumulation in germa…
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In this letter, we first show electrical spin injection in the germanium conduction band at room temperature and modulate the spin signal by applying a gate voltage to the channel. The corresponding signal modulation agrees well with the predictions of spin diffusion models. Then by setting a temperature gradient between germanium and the ferromagnet, we create a thermal spin accumulation in germanium without any tunnel charge current. We show that temperature gradients yield larger spin accumulations than pure electrical spin injection but, due to competing microscopic effects, the thermal spin accumulation in germanium remains surprisingly almost unchanged under the application of a gate voltage to the channel.
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Submitted 19 April, 2012;
originally announced April 2012.
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Crossover from spin accumulation into interface states to spin injection in the germanium conduction band
Authors:
A. Jain,
J. -C. Rojas-Sanchez,
M. Cubukcu,
J. Peiro,
J. C. Le Breton,
E. Prestat,
C. Vergnaud,
L. Louahadj,
C. Portemont,
C. Ducruet,
V. Baltz,
A. Barski,
P. Bayle-Guillemaud,
L. Vila,
J. -P. Attané,
E. Augendre,
G. Desfonds,
S. Gambarelli,
H. Jaffrès,
J. -M. George,
M. Jamet
Abstract:
Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this letter, we demonstrate a clear transition from spin accumulation into interface states…
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Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this letter, we demonstrate a clear transition from spin accumulation into interface states to spin injection in the conduction band of $n$-Ge. We observe spin signal amplification at low temperature due to spin accumulation into interface states followed by a clear transition towards spin injection in the conduction band from 200 K up to room temperature. In this regime, the spin signal is reduced down to a value compatible with spin diffusion model. More interestingly, we demonstrate in this regime a significant modulation of the spin signal by spin pum** generated by ferromagnetic resonance and also by applying a back-gate voltage which are clear manifestations of spin current and accumulation in the germanium conduction band.
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Submitted 5 January, 2013; v1 submitted 29 March, 2012;
originally announced March 2012.
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Ordering intermetallic alloys by ion irradiation: a way to tailor magnetic media
Authors:
H. Bernas,
D. Halley,
K. -H. Heinig,
J. -Ph. Attane,
D. Ravelosona,
A. Marty,
P. Auric,
C. Chappert,
Y. Samson
Abstract:
Combining He ion irradiation and thermal mobility below 600K, we both trigger and control the transformation from chemical disorder to order in thin films of an intermetallic ferromagnet (FePd). Kinetic Monte Carlo simulations show how the initial directional short range order determines order propagation. Magnetic ordering perpendicular to the film plane was achieved, promoting the initially we…
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Combining He ion irradiation and thermal mobility below 600K, we both trigger and control the transformation from chemical disorder to order in thin films of an intermetallic ferromagnet (FePd). Kinetic Monte Carlo simulations show how the initial directional short range order determines order propagation. Magnetic ordering perpendicular to the film plane was achieved, promoting the initially weak magnetic anisotropy to the highest values known for FePd films. This post-growth treatment should find applications in ultrahigh density magnetic recording.
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Submitted 26 September, 2002;
originally announced September 2002.
