Showing 1–28 of 28 results for author: Arès, R

Wafer-scale detachable monocrystalline Germanium nanomembranes for the growth of III-V materials and substrate reuse

Authors: Nicolas Paupy, Zakaria Oulad Elhmaidi, Alexandre Chapotot, Tadeáš Hanuš, Javier Arias-Zapata, Bouraoui Ilahi, Alexandre Heintz, Alex Brice Poungoué Mbeunmi, Roxana Arvinte, Mohammad Reza Aziziyan, Valentin Daniel, Gwenaëlle Hamon, Jérémie Chrétien, Firas Zouaghi, Ahmed Ayari, Laurie Mouchel, Jonathan Henriques, Loïc Demoulin, Thierno Mamoudou Diallo, Philippe-Olivier Provost, Hubert Pelletier, Maïté Volatier, Rufi Kurstjens, **youn Cho, Guillaume Courtois , et al. (10 additional authors not shown)

Abstract: Germanium (Ge) is increasingly used as a substrate for high-performance optoelectronic, photovoltaic, and electronic devices. These devices are usually grown on thick and rigid Ge substrates manufactured by classical wafering techniques. Nanomembranes (NMs) provide an alternative to this approach while offering wafer-scale lateral dimensions, weight reduction, limitation of waste, and cost effecti… ▽ More Germanium (Ge) is increasingly used as a substrate for high-performance optoelectronic, photovoltaic, and electronic devices. These devices are usually grown on thick and rigid Ge substrates manufactured by classical wafering techniques. Nanomembranes (NMs) provide an alternative to this approach while offering wafer-scale lateral dimensions, weight reduction, limitation of waste, and cost effectiveness. Herein, we introduce the Porous germanium Efficient Epitaxial LayEr Release (PEELER) process, which consists of the fabrication of wafer-scale detachable monocrystalline Ge NMs on porous Ge (PGe) and substrate reuse. We demonstrate monocrystalline Ge NMs with surface roughness below 1 nm on top of nanoengineered void layer enabling layer detachment. Furthermore, these Ge NMs exhibit compatibility with the growth of III-V materials. High-resolution transmission electron microscopy (HRTEM) characterization shows Ge NMs crystallinity and high-resolution X-ray diffraction (HRXRD) reciprocal space map** endorses high-quality GaAs layers. Finally, we demonstrate the chemical reconditioning process of the Ge substrate, allowing its reuse, to produce multiple free-standing NMs from a single parent wafer. The PEELER process significantly reduces the consumption of Ge during the fabrication process which paves the way for a new generation of low-cost flexible optoelectronics devices. △ Less

Submitted 6 October, 2022; originally announced October 2022.

Comments: 17 pages and 6 figures along with 3 figures in supporting information

Cosmology with the Laser Interferometer Space Antenna

Authors: Pierre Auclair, David Bacon, Tessa Baker, Tiago Barreiro, Nicola Bartolo, Enis Belgacem, Nicola Bellomo, Ido Ben-Dayan, Daniele Bertacca, Marc Besancon, Jose J. Blanco-Pillado, Diego Blas, Guillaume Boileau, Gianluca Calcagni, Robert Caldwell, Chiara Caprini, Carmelita Carbone, Chia-Feng Chang, Hsin-Yu Chen, Nelson Christensen, Sebastien Clesse, Denis Comelli, Giuseppe Congedo, Carlo Contaldi, Marco Crisostomi , et al. (155 additional authors not shown)

Abstract: The Laser Interferometer Space Antenna (LISA) has two scientific objectives of cosmological focus: to probe the expansion rate of the universe, and to understand stochastic gravitational-wave backgrounds and their implications for early universe and particle physics, from the MeV to the Planck scale. However, the range of potential cosmological applications of gravitational wave observations exten… ▽ More The Laser Interferometer Space Antenna (LISA) has two scientific objectives of cosmological focus: to probe the expansion rate of the universe, and to understand stochastic gravitational-wave backgrounds and their implications for early universe and particle physics, from the MeV to the Planck scale. However, the range of potential cosmological applications of gravitational wave observations extends well beyond these two objectives. This publication presents a summary of the state of the art in LISA cosmology, theory and methods, and identifies new opportunities to use gravitational wave observations by LISA to probe the universe. △ Less

Submitted 11 April, 2022; originally announced April 2022.

Report number: LISA CosWG-22-03

Defect free strain relaxation of microcrystals on mesoporous patterned silicon

Authors: Alexandre Heintz, Bouraoui Ilahi, Alexandre Pofelski, Gianluigi Botton, Gilles Patriarche, Andrea Barzaghi, Simon Fafard, Richard Arès, Giovanni Isella, Abderraouf Boucherif

Abstract: A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor materials such as Ge and III-V on Silicon (Si) substrate, enabling novel functionalities on the well-established low-cost Si technology platform. Here, we demonstrate a compliant Si substrate allowing defect-free epitaxial growth of lattice mismatched materials. The method is based on the deep patt… ▽ More A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor materials such as Ge and III-V on Silicon (Si) substrate, enabling novel functionalities on the well-established low-cost Si technology platform. Here, we demonstrate a compliant Si substrate allowing defect-free epitaxial growth of lattice mismatched materials. The method is based on the deep patterning of the Si substrate to form micrometer-scale pillars and subsequent electrochemical porosification. The investigation of the epitaxial Ge crystalline quality by X-ray diffraction, transmission electron microscopy and etch-pits counting demonstrates the full elastic relaxation of defect-free microcrystals. The achievement of dislocation free heteroepitaxy relies on the interplay between elastic deformation of the porous micropillars, set under stress by the lattice mismatch between Ge and Si, and on the diffusion of Ge into the mesoporous patterned substrate attenuating the mismatch strain at the Ge/Si interface. △ Less

Submitted 28 March, 2022; originally announced March 2022.

Comments: 27 pages and 4 figures along with 11 figures in supplementary information

Gravitational Waves at Strong Coupling from an Effective Action

Authors: Fëanor Reuben Ares, Oscar Henriksson, Mark Hindmarsh, Carlos Hoyos, Niko Jokela

Abstract: Using a holographic derivation of a quantum effective action for a scalar operator at strong coupling, we compute quasi-equilibrium parameters relevant for the gravitational wave signal from a first order phase transition in a simple dual model. We discuss how the parameters of the phase transition vary with the effective number of degrees of freedom of the dual field theory. Our model can produce… ▽ More Using a holographic derivation of a quantum effective action for a scalar operator at strong coupling, we compute quasi-equilibrium parameters relevant for the gravitational wave signal from a first order phase transition in a simple dual model. We discuss how the parameters of the phase transition vary with the effective number of degrees of freedom of the dual field theory. Our model can produce an observable signal at LISA if the critical temperature is around a TeV, in a parameter region where the field theory has an approximate conformal symmetry. △ Less

Submitted 4 November, 2021; v1 submitted 27 October, 2021; originally announced October 2021.

Comments: 6 pages, 3 figures

Report number: HIP-2021-24/TH

Journal ref: Phys. Rev. Lett. 128, 131101 (2022)

Effective actions and bubble nucleation from holography

Authors: Fëanor Reuben Ares, Oscar Henriksson, Mark Hindmarsh, Carlos Hoyos, Niko Jokela

Abstract: We discuss the computation of the quantum effective action of strongly interacting field theories using holographic duality, and its use to determine quasi-equilibrium parameters of first order phase transitions relevant for gravitational wave production. A particularly simple holographic model is introduced, containing only the metric and a free massive scalar field. Despite the simplicity, the m… ▽ More We discuss the computation of the quantum effective action of strongly interacting field theories using holographic duality, and its use to determine quasi-equilibrium parameters of first order phase transitions relevant for gravitational wave production. A particularly simple holographic model is introduced, containing only the metric and a free massive scalar field. Despite the simplicity, the model contains a rich phase diagram, including first order phase transitions at non-zero temperature, due to various multi-trace deformations. We obtain the leading terms in the effective action from homogeneous black brane solutions in the gravity dual, and linearised perturbations around them. We then employ the effective action to construct bubble and domain wall solutions in the field theory side and study their properties. In particular, we show how the scaling of the effective action with the effective number of degrees of freedom of the quantum field theory determines the corresponding scaling of gravitational wave parameters. △ Less

Submitted 4 November, 2021; v1 submitted 28 September, 2021; originally announced September 2021.

Comments: 40 pages, 17 figures

Report number: HIP-2021-30/TH

Journal ref: Phys. Rev. D 105, 066020 (2022)

Integrating van der Waals materials on paper substrates for electrical and optical applications

Authors: Wenliang Zhang, Qinghua Zhao, Carmen Munuera, Martin Lee, Eduardo Flores, João E. F. Rodrigues, Jose R. Ares, Carlos Sanchez, Javier Gainza, Herre S. J. van der Zant, José A. Alonso, Isabel J. Ferrer, Tao Wang, Riccardo Frisenda, Andres Castellanos-Gomez

Abstract: Paper holds the promise to replace silicon substrates in applications like internet of things or disposable electronics that require ultra-low-cost electronic components and an environmentally friendly electronic waste management. In the last years, spurred by the abovementioned properties of paper as a substrate and the exceptional electronic, mechanical and optical properties of van der Waals (v… ▽ More Paper holds the promise to replace silicon substrates in applications like internet of things or disposable electronics that require ultra-low-cost electronic components and an environmentally friendly electronic waste management. In the last years, spurred by the abovementioned properties of paper as a substrate and the exceptional electronic, mechanical and optical properties of van der Waals (vdW) materials, many research groups have worked towards the integration of vdW materials-based devices on paper. Recently, a method to deposit a continuous film of densely packed interconnects of vdW materials on paper by simply rubbing the vdW crystals against the rough surface of paper has been presented. This method utilizes the weak interlayer vdW interactions and allows cleaving of the crystals into micro platelets through the abrasion against the paper. Here, we aim to illustrate the general character and the potential of this technique by fabricating films of 39 different vdW materials (including superconductors, semi-metals, semiconductors, and insulators) on standard copier paper. We have thoroughly characterized their optical properties showing their high optical quality: one can easily resolve the absorption band edge of semiconducting vdW materials and even the excitonic features present in some vdW materials with high exciton binding energy. We also measured the electrical resistivity for several vdW materials films on paper finding exceptionally low values, which are in some cases, orders of magnitude lower than those reported for analogous films produced by inkjet printing. We finally demonstrate the fabrication of field-effect devices with vdW materials on paper using the paper substrate as an ionic gate. △ Less

Submitted 7 May, 2021; originally announced May 2021.

Comments: 4 figures in main text, 21 figures in Supp. Info

Journal ref: Applied Materials Today, 23, 101012, 2021

Dynamic formation of spherical voids crossing linear defects

Authors: Youcef A. Bioud, Maxime Rondeau, Abderraouf Boucherif, Gilles Patriarche, Dominique Drouin, Richard Arès

Abstract: A predictive model for the evolution of porous Ge layer upon thermal treatment is reported. We represent an idealized etched dislocation core as an axially symmetric elongated hole and computed its dynamics during annealing. Numerical simulations of the shape change of a completely spherical void via surface diffusion have been performed. Simulations and experiments show individual large spherical… ▽ More A predictive model for the evolution of porous Ge layer upon thermal treatment is reported. We represent an idealized etched dislocation core as an axially symmetric elongated hole and computed its dynamics during annealing. Numerical simulations of the shape change of a completely spherical void via surface diffusion have been performed. Simulations and experiments show individual large spherical voids, aligned along the dislocation core. The creation of voids could facilitate interactions between dislocations, enabling the dislocation network to change its connectivity in a way that facilitates the subsequent annihilation of dislocation segments. This confirms that thermally activated processes such as state diffusion of porous materials provide mechanisms whereby the defects are removed or arranged in configurations of lower energy. This model is intended to be indicative, and more detailed experimental characterization of process parameters such as annealing temperature and time, and could estimate the annealing time for given temperatures, or vice versa, with the right parameters. △ Less

Submitted 7 January, 2021; originally announced January 2021.

Comments: 7 pages, 3 figures

Gravitational waves from a holographic phase transition

Authors: Fëanor Reuben Ares, Mark Hindmarsh, Carlos Hoyos, Niko Jokela

Abstract: We investigate first order phase transitions in a holographic setting of five-dimensional Einstein gravity coupled to a scalar field, constructing phase diagrams of the dual field theory at finite temperature. We scan over the two-dimensional parameter space of a simple bottom-up model and map out important quantities for the phase transition: the region where first order phase transitions take pl… ▽ More We investigate first order phase transitions in a holographic setting of five-dimensional Einstein gravity coupled to a scalar field, constructing phase diagrams of the dual field theory at finite temperature. We scan over the two-dimensional parameter space of a simple bottom-up model and map out important quantities for the phase transition: the region where first order phase transitions take place; the latent heat, the transition strength parameter $α$, and the stiffness. We find that $α$ is generically in the range 0.1 to 0.3, and is strongly correlated with the stiffness (the square of the sound speed in a barotropic fluid). Using the LISA Cosmology Working Group gravitational wave power spectrum model corrected for kinetic energy suppression at large $α$ and non-conformal stiffness, we outline the observational prospects at the future space-based detectors LISA and TianQin. A TeV-scale hidden sector with a phase transition described by the model could be observable at both detectors. △ Less

Submitted 21 December, 2020; v1 submitted 25 November, 2020; originally announced November 2020.

Comments: 36 pages, 17 figures

Report number: HIP-2020-31/TH, Sussex-94886

Journal ref: J. High Energ. Phys. 2021, 100 (2021)

Raman Fingerprint of Pressure-Induced Phase Transitions in TiS3 Nanoribbons: Implications for Thermal Measurements under Extreme Stress Conditions

Authors: K. K. Mishra, T. R. Ravindran, Joshua O. Island, Eduardo Flores, Jose Ramon Ares, Carlos Sanchez, Isabel J. Ferrer, Herre S. J. van der Zant, Amit Pawbake, R. Kanawade, Andres Castellanos-Gomez, Dattatray J. Late

Abstract: Two-dimensional layered trichalcogenide materials have recently attracted the attention of the scientific community because of its robust mechanical, thermal properties and applications in opto and nanoelectronics devices. We report the pressure dependence of out-of plane Ag Raman modes in high quality few-layers titanium trisulfide (TiS3) nanoribbons grown using a direct solid-gas reaction method… ▽ More Two-dimensional layered trichalcogenide materials have recently attracted the attention of the scientific community because of its robust mechanical, thermal properties and applications in opto and nanoelectronics devices. We report the pressure dependence of out-of plane Ag Raman modes in high quality few-layers titanium trisulfide (TiS3) nanoribbons grown using a direct solid-gas reaction method and infer their cross-plane thermal expansion coefficient.Both mechanical stability and thermal properties of the TiS3 nanoribbons are elucidated using phonon-spectrum analyses. Raman spectroscopic studies at high pressure (up to 34 GPa) using a diamond anvil cell identify four prominent Ag Raman bands; a band at 557 cm-1 softens under compression, and others at 175, 300, and 370 cm-1 show normal hardening. Anomalies in phonon mode frequencies and excessive broadening in line-width of the soft phonon about ~ 13 GPa are attributed to the possible onset of a reversible structural transition. A complete structural phase transition at 43 GPa is inferred from Ag soft mode frequency (557 cm-1) versus pressure extrapolation curve, consistent with recent reported theoretical predictions. Using the experimental mode Grüneisen parameters i of Raman modes, the cross-plane thermal expansion coefficient Cv of the TiS3 nanoribbons at ambient phase is estimated to be1.32110-6K-1. The observed results are expected to be useful in calibration and performance of next generation nano-electronics and optical devices under extreme stress conditions. △ Less

Submitted 25 November, 2020; originally announced November 2020.

Immigration Document Classification and Automated Response Generation

Authors: Sourav Mukherjee, Tim Oates, Vince DiMascio, Huguens Jean, Rob Ares, David Widmark, Jaclyn Harder

Abstract: In this paper, we consider the problem of organizing supporting documents vital to U.S. work visa petitions, as well as responding to Requests For Evidence (RFE) issued by the U.S.~Citizenship and Immigration Services (USCIS). Typically, both processes require a significant amount of repetitive manual effort. To reduce the burden of mechanical work, we apply machine learning methods to automate th… ▽ More In this paper, we consider the problem of organizing supporting documents vital to U.S. work visa petitions, as well as responding to Requests For Evidence (RFE) issued by the U.S.~Citizenship and Immigration Services (USCIS). Typically, both processes require a significant amount of repetitive manual effort. To reduce the burden of mechanical work, we apply machine learning methods to automate these processes, with humans in the loop to review and edit output for submission. In particular, we use an ensemble of image and text classifiers to categorize supporting documents. We also use a text classifier to automatically identify the types of evidence being requested in an RFE, and used the identified types in conjunction with response templates and extracted fields to assemble draft responses. Empirical results suggest that our approach achieves considerable accuracy while significantly reducing processing time. △ Less

Submitted 29 September, 2020; originally announced October 2020.

Comments: To appear in ICDM 2020 workshop: MLLD-2020

Journal ref: 2020 International Conference on Data Mining Workshops (ICDMW), 2020, pp. 782-789

Experimental behaviour of a three-stage metal hydride hydrogen compressor

Authors: A. R. Galvis, F. Leardini, J. R. Ares, F. Cuevas, J. F. Fernandez

Abstract: A three-stage metal hydride hydrogen compressor (MHHC) system based in AB2-type alloys has been set-up. Every stage can be considered as a Sieverts-type apparatus. The MHHC system can work in the pressure and temperature ranges comprised from vacuum to 250 bar and from RT to 200C, respectively. An efficient thermal management system was set up for the operational ranges of temperature designed. It… ▽ More A three-stage metal hydride hydrogen compressor (MHHC) system based in AB2-type alloys has been set-up. Every stage can be considered as a Sieverts-type apparatus. The MHHC system can work in the pressure and temperature ranges comprised from vacuum to 250 bar and from RT to 200C, respectively. An efficient thermal management system was set up for the operational ranges of temperature designed. It dumps temperature shifts due to hydrogen expansion during stage coupling and hydrogen absorption/desorption in the alloys. Each reactor consists of a single and thin stainless-steel tube to maximize heat transfer. They are filled with similar amount of AB2 alloy. The MHHC system was able to produce a compression ratio (CR) as high as of 84.7 for inlet and outlet hydrogen pressures of 1.44 and 122 bar for a temperature span of 23 to 120C. △ Less

Submitted 23 July, 2020; originally announced July 2020.

Journal ref: J. Phys.: Energy, 2 (2020) 034006-9

Tunable Photodetectors via in situ Thermal Conversion of TiS$_3$ to TiO$_2$

Authors: Foad Ghasemi, Riccardo Frisenda, Eduardo Flores, Nikos Papadopoulos, Robert Biele, David Perez de Lara, Herre S. J. van der Zant, Kenji Watanabe, Takashi Taniguchi, Roberto D'Agosta, Jose R. Ares, Carlos Sánchez, Isabel J. Ferrer, Andres Castellanos-Gomez

Abstract: In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In particular, we demonstrate the controlled oxidation of titanium trisulfide (TiS$_3$), a layered semi… ▽ More In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In particular, we demonstrate the controlled oxidation of titanium trisulfide (TiS$_3$), a layered semiconductor that has attracted much attention recently thanks to its quasi-1D electronic and optoelectronic properties and its direct bandgap of 1.1 eV. Heating TiS$_3$ in air above 300 °C gradually converts it into TiO$_2$, a semiconductor with a wide bandgap of 3.2 eV with ap-plications in photo-electrochemistry and catalysis. In this work, we investigate the controlled thermal oxidation of individual TiS$_3$ nanoribbons and its influence on the optoelectronic properties of TiS$_3$-based photodetectors. We observe a step-wise change in the cut-off wavelength from its pristine value ~1000 nm to 450 nm after subjecting the TiS$_3$ devices to subsequent thermal treatment cycles. Ab-initio and many-body calculations confirm an increase in the bandgap of titanium oxysulfide (TiO$_{2-x}$S$_x$) when increasing the amount of oxygen and reducing the amount of sulfur. △ Less

Submitted 11 June, 2020; originally announced June 2020.

Comments: 7 figures in main text, 9 figures in supp. info

Journal ref: Nanomaterials, 10(4), 711, 2020

Multi-terminal electronic transport in boron nitride encapsulated TiS$_3$ nanosheets

Authors: Nikos Papadopoulos, Eduardo Flores, Kenji Watanabe, Takashi Taniguchi, Jose R. Ares, Carlos Sanchez, Isabel J. Ferrer, Andres Castellanos-Gomez, Gary A. Steele, Herre S. J. van der Zant

Abstract: We have studied electrical transport as a function of carrier density, temperature and bias in multi-terminal devices consisting of hexagonal boron nitride (h-BN) encapsulated titanium trisulfide (TiS$_3$) sheets. Through the encapsulation with h-BN, we observe metallic behavior and high electron mobilities. Below $\sim$60 K an increase in the resistance, and non-linear transport with plateau-like… ▽ More We have studied electrical transport as a function of carrier density, temperature and bias in multi-terminal devices consisting of hexagonal boron nitride (h-BN) encapsulated titanium trisulfide (TiS$_3$) sheets. Through the encapsulation with h-BN, we observe metallic behavior and high electron mobilities. Below $\sim$60 K an increase in the resistance, and non-linear transport with plateau-like features in the differential resistance are present, in line with the expected charge density wave (CDW) formation. Importantly, the critical temperature and the threshold field of the CDW phase can be controlled through the back-gate. △ Less

Submitted 7 April, 2020; originally announced April 2020.

Journal ref: 2D Mater. 7 015009 (2020)

Polarization-sensitive and broadband photodetection based on a mixed-dimensionality TiS3/Si p-n junction

Authors: Yue Niu, Riccardo Frisenda, Eduardo Flores, Jose R. Ares, Weicheng Jiao, David Perez de Lara, Carlos Sanchez, Rongguo Wang, Isabel J. Ferrer, Andres Castellanos-Gomez

Abstract: The capability to detect the polarization state of light is crucial in many day-life applications and scientific disciplines. Novel anisotropic two-dimensional materials such as TiS3 combine polarization sensitivity, given by the in-plane optical anisotropy, with excellent electrical properties. Here we demonstrate the fabrication of a monolithic polarization sensitive broadband photodetector base… ▽ More The capability to detect the polarization state of light is crucial in many day-life applications and scientific disciplines. Novel anisotropic two-dimensional materials such as TiS3 combine polarization sensitivity, given by the in-plane optical anisotropy, with excellent electrical properties. Here we demonstrate the fabrication of a monolithic polarization sensitive broadband photodetector based on a mixed-dimensionality TiS3/Si p-n junction. The fabricated devices show broadband responsivity up to 1050 nm, a strong sensitivity to linearly polarized illumination with difference between the two orthogonal polarization states up to 350 % and a good detectivity and fast response time. The discussed devices can be used as building blocks to fabricate more complex polarization sensitive systems such as polarimeters. △ Less

Submitted 22 September, 2020; v1 submitted 27 March, 2019; originally announced March 2019.

Comments: 6 main text figures, 1 figure. Includes the supporting information (18 supp. info. figures)

Journal ref: Advanced Optical Materials, 2018, vol. 6, no 19, p. 1800351

Chemical Vapor Deposition Growth of Boron-Carbon-Nitrogen layers from Methylamine Borane Thermolysis Products

Authors: Fabrice Leardini, Eduardo Flores, Andrés R. Galvis, Isabel Jiménez Ferrer, José Ramón Ares, Carlos Sánchez, Pablo Molina, Herko P. van der Meulen, Cristina Gómez Navarro, Guillermo López Polin, Fernando J. Urbanos, Daniel Granados, F. Javier García-García, Umit B. Demirci, Pascal G. Yot, Filippo Mastrangelo, Maria Grazia Betti, Carlo Mariani

Abstract: This work investigates the growth of B-C-N layers by chemical vapor deposition using methylamine borane (MeAB) as single-source precursor. MeAB has been synthesized and characterized, paying particular attention to the analysis of its thermolysis products, which are the gaseous precursors for B-C-N growth. Samples have been grown on Cu foils and transferred onto different substrates for their morp… ▽ More This work investigates the growth of B-C-N layers by chemical vapor deposition using methylamine borane (MeAB) as single-source precursor. MeAB has been synthesized and characterized, paying particular attention to the analysis of its thermolysis products, which are the gaseous precursors for B-C-N growth. Samples have been grown on Cu foils and transferred onto different substrates for their morphological, structural, chemical, electronic and optical characterizations. The results of these characterizations indicate a segregation of h-BN and Graphene-like (Gr) domains. However, there is an important presence of B and N interactions with C at the Gr borders, and of C interacting at the h-BN-edges, respectively, in the obtained nano-layers. In particular, there is significant presence of C-N bonds, at Gr/h-BN borders and in the form of N do** of Gr domains. The overall B:C:N contents in the layers is close to 1:3:1.5. A careful analysis of the optical bandgap determination of the obtained B-C-N layers is presented, discussed and compared with previous seminal works with samples of similar composition. △ Less

Submitted 20 February, 2019; originally announced February 2019.

Comments: 35 pages, 7 figures

Journal ref: Nanotechnology 29 (2018) 025603

Large birefringence and linear dichroism in TiS3 nanosheets

Authors: Nikos Papadopoulos, Riccardo Frisenda, Robert Biele, Eduardo Flores, Jose R. Ares, Carlos Sanchez, Herre S. J. van der Zant, Isabel J. Ferrer, Roberto D'Agosta, Andres Castellanos-Gomez

Abstract: TiS3 nanosheets have proven to be promising candidates for ultrathin optoelectronic devices due to their direct narrow band-gap and the strong light-matter interaction. In addition, the marked in-plane anisotropy of TiS3 is appealing for the fabrication of polarization sensitive optoelectronic devices. Herein, we study the optical contrast of TiS3 nanosheets of variable thickness on SiO2/Si substr… ▽ More TiS3 nanosheets have proven to be promising candidates for ultrathin optoelectronic devices due to their direct narrow band-gap and the strong light-matter interaction. In addition, the marked in-plane anisotropy of TiS3 is appealing for the fabrication of polarization sensitive optoelectronic devices. Herein, we study the optical contrast of TiS3 nanosheets of variable thickness on SiO2/Si substrates, from which we obtain the complex refractive index in the visible spectrum. We find that TiS3 exhibits very large birefringence, larger than that of well-known strong birefringent materials like TiO2 or calcite, and linear dichroism. These findings are in qualitative agreement with ab initio calculations that suggest an excitonic origin for the birefringence and linear dichroism of the material. △ Less

Submitted 24 September, 2020; v1 submitted 1 October, 2018; originally announced October 2018.

Journal ref: Nanoscale, 2018,10, 12424-12429 (2018)

Low cost Ge/Si virtual substrate through dislocation trap** by nanovoids

Authors: Youcef A. Bioud, Abderraouf Boucherif, Etienne Paradis, Ali Soltani, Dominique Drouin, Richard Arès

Abstract: A low-cost method to reduce the threading disloca-tions density (TDD) in relaxed germanium (Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si sub-strate was treated with post epitaxial process to create a region with a high density of nanovoids in Ge layer which act as a barrier for threading dislocations propagation . A low-cost method to reduce the threading disloca-tions density (TDD) in relaxed germanium (Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si sub-strate was treated with post epitaxial process to create a region with a high density of nanovoids in Ge layer which act as a barrier for threading dislocations propagation . △ Less

Submitted 15 May, 2018; originally announced May 2018.

Journal ref: Inter. Conf. Si Epi. heterostructures. procceding, ICSI10, May 2017, Coventry, United Kingdom

Dielectrophoretic assembly of liquid-phase-exfoliated TiS3 nanoribbons for photodetecting applications

Authors: R. Frisenda, E. Giovanelli, P. Mishra, P. Gant, E. Flores, C. Sánchez, J. R. Ares, D. Perez de Lara, I. J. Ferrer, E. M. Pérez, A. Castellanos-Gomez

Abstract: Liquid-phase-exfoliation is a technique capable of producing large quantities of two-dimensional material in suspension. Despite many efforts in the optimization of the exfoliation process itself not much has been done towards the integration of liquid-phase-exfoliated materials in working solid-state devices. In this article, we use dielectrophoresis to direct the assembly of liquid-phase-exfolia… ▽ More Liquid-phase-exfoliation is a technique capable of producing large quantities of two-dimensional material in suspension. Despite many efforts in the optimization of the exfoliation process itself not much has been done towards the integration of liquid-phase-exfoliated materials in working solid-state devices. In this article, we use dielectrophoresis to direct the assembly of liquid-phase-exfoliated TiS3 nanoribbons between two gold electrodes to produce photodetectors working in the visible. Through electrical and optical measurements we characterize the responsivity of the device and we find values as large as 3.8 mA/W, which improve of more than one order of magnitude on the state-of-the-art for devices based on liquid-phase-exfoliated two-dimensional materials assembled by drop-casting or ink-jet methods. △ Less

Submitted 12 June, 2017; originally announced June 2017.

Comments: 10 pages, 3 figures, supporting information (8 pages, 11 figures)

High current density electrical breakdown of TiS3 nanoribbon-based field-effect transistors

Authors: Aday J. Molina-Mendoza, Joshua O. Island, Wendel S. Paz, Jose Manuel Clamagirand, Jose Ramón Ares, Eduardo Flores, Fabrice Leardini, Carlos Sánchez, Nicolás Agraït, Gabino Rubio-Bollinger, Herre S. J. van der Zant, Isabel J. Ferrer, J. J. Palacios, Andres Castellanos-Gomez

Abstract: The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, we study here the high current density properties of the layered material titani… ▽ More The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, we study here the high current density properties of the layered material titanium trisulfide (TiS3). We observe high breakdown current densities up to 1.7 10^6 A/cm^2 in TiS3 nanoribbon-based field-effect transistors which are among the highest found in semiconducting nanomaterials. Investigating the mechanisms responsible for current breakdown, we perform a thermogravimetric analysis of bulk TiS3 and compare the results with density functional theory (DFT) and Kinetic Monte Carlo calculations. We conclude that oxidation of TiS3 and subsequent desorption of sulfur atoms plays an important role in the electrical breakdown of the material in ambient conditions. Our results show that TiS3 is an attractive material for high power applications and lend insight to the thermal and defect activated mechanisms responsible for electrical breakdown in nanostructured devices. △ Less

Submitted 18 April, 2017; originally announced April 2017.

Comments: 24 pages, 9 figures main text, 4 figures supporting information

Journal ref: Adv. Funct. Mater. (2017), 27(13), 1605647

Electronics and optoelectronics of quasi-one dimensional layered transition metal trichalcogenides

Authors: Joshua O. Island, Aday J. Molina-Mendoza, Mariam Barawi, Robert Biele, Eduardo Flores, Jose M. Clamagirand, Jose R. Ares, Carlos Sanchez, Herre S. J. van der Zant, Roberto D'Agosta, Isabel J. Ferrer, Andres Castellanos-Gomez

Abstract: The isolation of graphene and transition metal dichalcongenides has opened a veritable world to a great number of layered materials which can be exfoliated, manipulated, and stacked or combined at will. With continued explorations expanding to include other layered materials with unique attributes, it is becoming clear that no one material will fill all the post-silicon era requirements. Here we r… ▽ More The isolation of graphene and transition metal dichalcongenides has opened a veritable world to a great number of layered materials which can be exfoliated, manipulated, and stacked or combined at will. With continued explorations expanding to include other layered materials with unique attributes, it is becoming clear that no one material will fill all the post-silicon era requirements. Here we review the properties and applications of layered, quasi-one dimensional transition metal trichalcogenides (TMTCs) as novel materials for next generation electronics and optoelectronics. The TMTCs present a unique chain-like structure which gives the materials their quasi-one dimensional properties such as high anisotropy ratios in conductivity and linear dichroism. The range of band gaps spanned by this class of materials (0.2 eV- 2 eV) makes them suitable for a wide variety of applications including field-effect transistors, infrared, visible and ultraviolet photodetectors, and unique applications related to their anisotropic properties which opens another degree of freedom in the development of next generation electronics. In this review we survey the historical development of these remarkable materials with an emphasis on the recent activity generated by the isolation and characterization of atomically thin titanium trisulfide (TiS3). △ Less

Submitted 30 April, 2017; v1 submitted 6 February, 2017; originally announced February 2017.

Comments: Topical review of the properties and applications of the transition metal trichalcogenides (TMTCs)

Journal ref: 2D Materials, 4 0220033 (2017)

Titanium trisulfide (TiS3): a 2D semiconductor with quasi-1D optical and electronic properties

Authors: Joshua O. Island, Robert Biele, Mariam Barawi, Jose M. Clamagirand, Jose R. Ares, Carlos Sanchez, Herre S. J. van der Zant, Isabel J. Ferrer, Roberto D'Agosta, Andres Castellanos-Gomez

Abstract: We present characterizations of few-layer titanium trisulfide (TiS3) flakes which, due to their reduced in-plane structural symmetry, display strong anisotropy in their electrical and optical properties. Exfoliated few-layer flakes show marked anisotropy of their in-plane mobilities reaching ratios as high as 7.6 at low temperatures. Based on the preferential growth axis of TiS3 nanoribbons, we de… ▽ More We present characterizations of few-layer titanium trisulfide (TiS3) flakes which, due to their reduced in-plane structural symmetry, display strong anisotropy in their electrical and optical properties. Exfoliated few-layer flakes show marked anisotropy of their in-plane mobilities reaching ratios as high as 7.6 at low temperatures. Based on the preferential growth axis of TiS3 nanoribbons, we develop a simple method to identify the in-plane crystalline axes of exfoliated few-layer flakes through angle resolved polarization Raman spectroscopy. Optical transmission measurements show that TiS3 flakes display strong linear dichroism with a magnitude (transmission ratios up to 30) much greater than that observed for other anisotropic two-dimensional (2D) materials. Finally, we calculate the absorption and transmittance spectra of TiS3 in the random-phase-approximation (RPA) and find that the calculations are in good agreement with the observed experimental optical transmittance. △ Less

Submitted 16 April, 2016; v1 submitted 23 October, 2015; originally announced October 2015.

Comments: 18 pages, 4 figures, including Supporting Information (6 pages, 6 figures)

Journal ref: Scientific Reports 6, 22214 (2016)

Temperature dependent Raman spectroscopy of titanium trisulfide (TiS3) nanoribbons and nanosheets

Authors: Amit S. Pawbake, Joshua O. Island, Eduardo Flores, Jose Ramon Ares, Carlos Sanchez, Isabel J. Ferrer, Sandesh R. Jadkar, Herre S. J. van der Zant, Andres Castellanos-Gomez, Dattatray J. Late

Abstract: Titanium trisulfide (TiS3) has recently attracted the interest of the 2D community as it presents a direct bandgap of ~1.0 eV, shows remarkable photoresponse, and has a predicted carrier mobility up to 10000 cm2V-1 s-1. However, a study of the vibrational properties of TiS3, relevant to understanding the electron-phonon interaction which can be the main mechanism limiting the charge carrier mobili… ▽ More Titanium trisulfide (TiS3) has recently attracted the interest of the 2D community as it presents a direct bandgap of ~1.0 eV, shows remarkable photoresponse, and has a predicted carrier mobility up to 10000 cm2V-1 s-1. However, a study of the vibrational properties of TiS3, relevant to understanding the electron-phonon interaction which can be the main mechanism limiting the charge carrier mobility, is still lacking. In this work, we take the first steps to study the vibrational properties of TiS3 through temperature dependent Raman spectroscopy measurements of TiS3 nanoribbons and nanosheets. Our investigation shows that all the Raman modes linearly soften (red shift) as the temperature increases from 88 K to 570 K, due to the anharmonic vibrations of the lattice which also includes contributions from the lattice thermal expansion. This softening with the temperature of the TiS3 modes is more pronounced than that observed in other 2D semiconductors such as MoS2, MoSe2, WSe2 or black phosphorus (BP). This marked temperature dependence of the Raman could be exploited to determine the temperature of TiS3 nanodevices by using Raman spectroscopy as a non-invasive and local thermal probe. Interestingly, the TiS3 nanosheets show a stronger temperature dependence of the Raman modes than the nanoribbons, which we attribute to a lower interlayer coupling in the nanosheets. △ Less

Submitted 19 October, 2015; originally announced October 2015.

Comments: 19 pages, 6 figures, 1 table

Electronic bandgap and exciton binding energy of layered semiconductor TiS3

Authors: Aday J. Molina-Mendoza, Mariam Barawi, Robert Biele, Eduardo Flores, José R. Ares, Carlos Sánchez, Gabino Rubio-Bollinger, Nicolás Agraït, Roberto D'Agosta, Isabel J. Ferrer, Andres Castellanos-Gomez

Abstract: We present a study of the electronic and optical bandgap in layered TiS3, an almost unexplored semiconductor that has attracted recent attention because of its large carrier mobility and inplane anisotropic properties, to determine its exciton binding energy. We combine scanning tunneling spectroscopy and photoelectrochemical measurements with random phase approximation and Bethe-Salpeter equation… ▽ More We present a study of the electronic and optical bandgap in layered TiS3, an almost unexplored semiconductor that has attracted recent attention because of its large carrier mobility and inplane anisotropic properties, to determine its exciton binding energy. We combine scanning tunneling spectroscopy and photoelectrochemical measurements with random phase approximation and Bethe-Salpeter equation calculations to obtain the electronic and optical bandgaps and thus the exciton binding energy. We find experimental values for the electronic bandgap, optical bandgap and exciton binding energy of 1.2 eV, 1.07 eV and 130 meV, respectively, and 1.15 eV, 1.05 eV and 100 meV for the corresponding theoretical results. The exciton binding energy is orders of magnitude larger than that of common semiconductors and comparable to bulk transition metal dichalcogenides, making TiS3 ribbons a highly interesting material for optoelectronic applications and for studying excitonic phenomena even at room temperature. △ Less

Submitted 21 September, 2015; v1 submitted 18 September, 2015; originally announced September 2015.

Comments: 24 pages, 10 figures

Journal ref: Advanced Electronic Materials vol. 1, issue 9, page 1500126 (2015)

Strain induced bang-gap engineering in layered $\text{TiS}_3$

Authors: Robert Biele, Eduardo Flores, Jose Ramon Ares, Carlos Sanchez, Isabel J. Ferrer, Gabino Rubio-Bollinger, Andres Castellanos-Gomez, Roberto D'Agosta

Abstract: By combining {\it ab initio} calculations and experiments we demonstrate how the band gap of the transition metal tri-chalcogenide TiS$_3$ can be modified by inducing tensile or compressive strain. We show by numerical calculations that the electronic band gap of layered TiS$_3$ can be modified for monolayer, bilayer and bulk material by inducing either hydrostatic pressure or strain. In addition,… ▽ More By combining {\it ab initio} calculations and experiments we demonstrate how the band gap of the transition metal tri-chalcogenide TiS$_3$ can be modified by inducing tensile or compressive strain. We show by numerical calculations that the electronic band gap of layered TiS$_3$ can be modified for monolayer, bilayer and bulk material by inducing either hydrostatic pressure or strain. In addition, we find that the monolayer and bilayer exhibits a transition from a direct to indirect gap when the strain is increased in the direction of easy transport. The ability to control the band gap and its nature can have an impact in the use of TiS$_3$ for optical applications. We verify our prediction via optical absorption experiments that present a band gap increase of up to 10\% upon tensile stress application along the easy transport direction. △ Less

Submitted 1 September, 2015; originally announced September 2015.

Comments: 12 pages, 5 figures, latex2e (pdflatex)

TiS3 transistors with tailored morphology and electrical properties

Authors: Joshua O. Island, Mariam Barawi, Robert Biele, Adrian Almazan, Jose M. Clamagirand, Jose R. Ares, Carlos Sanchez, Herre S. J. van der Zant, Jose V. Alvarez, Roberto D'Agosta, Isabel J. Ferrer, Andres Castellanos-Gomez

Abstract: Control over the morphology of TiS3 is demonstrated by synthesizing 1D nanoribbons and 2D nanosheets. The nanosheets can be exfoliated down to a single layer. Through extensive characterization of the two morphologies, differences in the electronic properties are found and attributed to a higher density of sulphur vacancies in nanosheets which, according to density functional theory calculations,… ▽ More Control over the morphology of TiS3 is demonstrated by synthesizing 1D nanoribbons and 2D nanosheets. The nanosheets can be exfoliated down to a single layer. Through extensive characterization of the two morphologies, differences in the electronic properties are found and attributed to a higher density of sulphur vacancies in nanosheets which, according to density functional theory calculations, leads to an n-type do**. △ Less

Submitted 20 March, 2015; originally announced March 2015.

Comments: 28 pages, 4 figures, 1 table. Includes Supporting Information (9 figures, 2 tables)

Journal ref: Advanced Materials (2015)

Thermoelectric power of bulk black-phosphorus

Authors: Eduardo Flores, Jose R. Ares, Andres Castellanos-Gomez, Mariam Barawi, Isabel J. Ferrer, Carlos Sánchez

Abstract: The potential of bulk black-phosphorus for thermoelectric applications has been experimentally studied. The Seebeck Coefficient (S) has been measured in the temperature range from 300 K to 385 K, finding a value of S = +335 +- 10 uV/K at room temperature (indicating a naturally occurring p-type conductivity). S increases with temperature, as expected for p-type semiconductors, which can be attribu… ▽ More The potential of bulk black-phosphorus for thermoelectric applications has been experimentally studied. The Seebeck Coefficient (S) has been measured in the temperature range from 300 K to 385 K, finding a value of S = +335 +- 10 uV/K at room temperature (indicating a naturally occurring p-type conductivity). S increases with temperature, as expected for p-type semiconductors, which can be attributed to an increase of the charge carrier density. The electrical resistance drops up to a 40 % while heating in the studied temperature range. As a consequence, the power factor at 385 K is 2.7 times higher than that at room temperature. This work demonstrates the feasibility of black-phosphorus in thermoelectric applications, such as thermal energy scavenging, which typically require devices with high performance at temperatures above room temperature. △ Less

Submitted 26 January, 2015; v1 submitted 24 November, 2014; originally announced November 2014.

Comments: 3 figures

Journal ref: Appl. Phys. Lett. 106, 022102 (2015)

Ultrahigh photoresponse of few-layer TiS3 nanoribbon transistors

Authors: Joshua O. Island, Michele Buscema, Mariam Barawi, José M. Clamagirand, José R. Ares, Carlos Sánchez, Isabel J. Ferrer, Gary A. Steele, Herre S. J. van der Zant, Andres Castellanos-Gomez

Abstract: Here, we isolate thin TiS3 ribbons, a layered direct band gap semiconductor (1.1 eV, well suited for detection all across the visible spectrum), thus far almost unexplored. We fabricate field effect transistors and study their electrical characteristics and optoelectronic properties. The measured FET characteristics show mobilities up to 2.6 cm^2/Vs and ON/OFF ratios up to 10^4. Under illumination… ▽ More Here, we isolate thin TiS3 ribbons, a layered direct band gap semiconductor (1.1 eV, well suited for detection all across the visible spectrum), thus far almost unexplored. We fabricate field effect transistors and study their electrical characteristics and optoelectronic properties. The measured FET characteristics show mobilities up to 2.6 cm^2/Vs and ON/OFF ratios up to 10^4. Under illumination, the TiS3 NR-FETs present an ultrahigh photoresponse of 2910 A/W and fast rise/fall times of ~4 ms. In addition, we measure cutoff frequencies (f3dB) up to 1000 Hz. The strong combination of ultrahigh sensitivity all along the visible spectrum and fast time response of TiS3 nanoribbon transistors put them among the best nanoscale photodetectors to date. △ Less

Submitted 19 June, 2014; originally announced June 2014.

Comments: 4 Figures + 1 Table. It also includes Supp. Info. (5 Figures + 3 Tables)

Power dependent switching of nonlinear trap** by local photonic potentials

Authors: Y. Shavit, Y. Linzon, S. Bar-Ad, R. Morandotti, M. Volatier-Ravat, V. Aimez, R. Ares

Abstract: We study experimentally and numerically the nonlinear scattering of wave packets by local multi-site guiding centers embedded in a continuous dielectric medium, as a function of the input power and angle of incidence. The extent of trap** into the linear modes of different sites is manipulated as a function of both the input power and incidence angle, demonstrating power-controlled switching o… ▽ More We study experimentally and numerically the nonlinear scattering of wave packets by local multi-site guiding centers embedded in a continuous dielectric medium, as a function of the input power and angle of incidence. The extent of trap** into the linear modes of different sites is manipulated as a function of both the input power and incidence angle, demonstrating power-controlled switching of nonlinear trap** by local photonic potentials. △ Less

Submitted 30 January, 2008; originally announced January 2008.

Comments: Submitted to Optics Letters