Condensed Matter > Materials Science
[Submitted on 15 May 2018]
Title:Low cost Ge/Si virtual substrate through dislocation trap** by nanovoids
View PDFAbstract:A low-cost method to reduce the threading disloca-tions density (TDD) in relaxed germanium (Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si sub-strate was treated with post epitaxial process to create a region with a high density of nanovoids in Ge layer which act as a barrier for threading dislocations propagation .
Submission history
From: Youcef Bioud [view email] [via CCSD proxy][v1] Tue, 15 May 2018 08:14:16 UTC (720 KB)
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