Mott resistive switching initiated by topological defects

Abstract

Resistive switching is the fundamental process that triggers the sudden change of the electrical properties in solid-state devices under the action of intense electric fields [1]. Despite its relevance for information processing, ultrafast electronics, neuromorphic devices, resistive memories and brain-inspired computation [2, 3, 4, 5, 6, 7, 1, 8, 9, 10, 11, 12, 13, 14], the nature of the local stochastic fluctuations that drive the formation of metallic nuclei out of the insulating state has remained hidden.

Here, using $operando$ X-ray nano-imaging, we have captured the early-stages of resistive switching in a V${}_{2}$O${}_{3}$-based device under working conditions. V${}_{2}$O${}_{3}$ is a paradigmatic Mott material [3], which undergoes a first-order metal-to-insulator transition coupled to a lattice transformation that breaks the threefold rotational symmetry of the rhombohedral metal phase [2, 5, 6, 8, 9, 10, 11, 15]. We reveal a new class of volatile electronic switching triggered by nanoscale topological defects of the lattice order parameter of the insulating phase. Our results pave the way to the use of strain engineering approaches to manipulate topological defects and achieve the full control of the electronic Mott switching. The concept of topology-driven reversible electronic transition is of interest for a broad class of quantum materials, comprising transition metal oxides, chalcogenides and kagome metals, that exhibit first-order electronic transitions coupled to a symmetry-breaking order.

Figure 1: a) Non-primitive hexagonal unit cell of the high-temperature rhombohedral phase. b) Sketch of the rhombohedral-to-monoclinic distortion taking place along each of the three equivalent hexagonal axes. c) PEEM experimental setup. X-ray radiation with tunable energy resonant with the vanadium L${}_{2,3}$ edge im**es on the sample and the emitted electrons are collected and imaged through electrostatic and magnetic lenses. The V_2O_3 film of thickness $t$ = 20 nm is coated with gold metal electrodes separated by a 2 µm width ($w$) $\times$ 50 µm length ($l$) gap, allowing to drive a current through the device while simultaneously acquiring XLD-PEEM images.

The insulator-to-metal transition (IMT) in Mott materials is a key mechanism for the development of the next generation Mottronic devices [3, 13]. The intrinsic correlated nature of the Mott insulating state makes these systems fragile to external stimuli [16, 17], such as the application of an electric field, which can drive the collapse of the electronic band structure and the sudden release of a large number of free carriers [18, 19]. At the macroscopic level, this phenomenon manifests in the resistive switching process, i.e., a sharp increase of the current flow when the applied voltage exceeds a threshold value [20, 21, 22, 6, 23, 24, 25, 26, 27]. This strong non-linearity triggered many efforts to develop neuromorphic building blocks for the hardware implementation of neural networks [14] or for ultrafast volatile and non-volatile memories or processors [28, 29, 12]. The state-of-the-art macroscopic models [30] are based on resistor networks that consider interconnected nodes transforming from the insulating to metallic state in the presence of an electric field. Above a certain threshold, a percolative transition takes place, thus leading to the formation of a conductive filament and a sudden resistivity drop [22, 31].

The full control and, therefore, the exploitation of this process is prevented by the limited knowledge of the early-stage firing dynamics. Microscopically, little is known about the nature of the nanoscale regions that trigger the avalanche process. Also the relation between the electronic and structural properties of the switched regions and those of the pristine insulating template is a matter of debate. Pioneering optical microscopy experiments captured the real-time formation of macroscopic metallic channels [4, 32, 33, 34, 35], while lacking the resolution and sensitivity to address the origin of the switching process.

Here, we introduce a resonant X-ray microscopy to take nanoscale snapshots of the switching dynamics at the nanoscale during the application of an electric field to a V${}_{2}$O${}_{3}$-based nanodevice. Our results unveil the fundamental role played by the topology of the underlying lattice nanotexture. The breaking of the $C_{3}$ symmetry upon transition to the insulating monoclinic phase leads to the formation of three twin domains whose boundaries are oriented along the three hexagonal directions [36, 37]. The geometrical constraints produce strain topological defects at the corners of monoclinic domains crossing with an angle of 60${}^{\circ}$. These nanoscale topological defects act as seeds of the metallic phase, thus triggering the macroscopic volatile switching. The nature of the transient metallic state is discussed in view of achieving ultrafast and reversible all-electronic switching.

V_2O_3 is a prototypical Mott insulator that undergoes a thermally-driven transition from a high-temperature paramagnetic metal with rhombohedral lattice symmetry to a low-temperature antiferromagnetic insulator with monoclinic structure [38, 39, 40]. The lattice transformation across the critical temperature $T_{IMT}$ implies the breaking of the $C_{3}$ symmetry of the non-primitive hexagonal unit cell of the high-temperature phase (see Fig. 1a). The structural transition can thus be described [37] by a vector order parameter:

$$\overrightarrow{\epsilon}=(\epsilon_{31},\epsilon_{23})=\epsilon\,\big{(}\mathrm{cos}\phi_{n},\mathrm{sin}\phi_{n}\big{)}$$ (1)

associated to the shear strain components $\epsilon_{31}$ and $\epsilon_{23}$ that characterize the monoclinic distortion. Below $T_{IMT}$, the amplitude of the order parameter, $\epsilon$, becomes non-zero, while the phase can assume three different values:

$$\phi_{n}=(2n-1)\frac{\pi}{3}$$ (2)

corresponding to the distortion along the three equivalent hexagonal axes of the rhombohedral phase, indicated in the following by the versors $\hat{\epsilon}_{n}$, $n$=1,2,3 (see Fig. 1b).

Resistive switching from the insulating to the metallic state can be induced by applying an electric field across patterned micro-gaps at temperatures close to $T_{IMT}$ [41, 4, 33]. The resistive switching device investigated here is formed by a 20 nm V_2O_3 film coated with gold electrodes. V_2O_3 is grown by oxygen-assisted Molecular Beam Epitaxy on a (0001)-Al_2O_3 substrate with a 40 nm Cr_2O_3 buffer layer to reduce any interfacial residual strain [42]. The resulting V_2O_3 film has the $c$ axis oriented parallel to the surface normal and undergoes the IMT at $T_{IMT}$ = 145 K (see Supplementary Information Fig. S1). Two gold electrodes allow the application of an electric bias across the gap of width $w$ = 2 µm and length $l$ = 30 µm (figure 1c). The gap region between the electrodes is imaged using Photo Emission Electron Microscopy (PEEM), combined with X-ray Linear Dichroism (XLD) at the L_2,3 vanadium edge (513-530 eV, see Figure S2) [43, 36, 37]. The XLD-PEEM images are obtained from the normalized difference between images recorded with the light electric field vector, $\overrightarrow{E}$, parallel and perpendicular to the surface normal at a photon energy 520.6 eV. Since the XLD signal depends on the angle between the in-plane component of $\overrightarrow{E}$ and $\overrightarrow{\epsilon}(\mathbf{r})$ [37] (see Fig. 1b and c), this technique provides a map - with $\sim$30 nm spatial resolution - of the three different monoclinic domains and their melting during the resistive switching process.

Figure 2a) shows the PEEM image obtained in the monoclinic insulating phase of V_2O_3 at $T$ = 120 K. The in-gap V_2O_3 features the nanotexture typical of the monoclinic insulating phase [36, 37]. Monoclinic domains with different $\phi_{n}$ give rise to different XLD contrast, which can be appreciated as different color intensities within the PEEM image. The minimization of the total strain leads to the formation of stripe-like domains, whose directions are constrained by the symmetry of the system [37], as it will be discussed later. Each monoclinic insulating domain with a specific $\phi_{n}$, extends over a few micrometers in length, thus connecting the two electrodes, and it is characterized by a lateral size of $w_{dom}\sim$200 nm [37].

Figure 2: PEEM images before (a) and during (b-j) electric current application at $T$ = 120 K. The homogeneous regions on top and bottom of each image are the gold electrodes; the area in between the electrodes represents the exposed V_2O_3 surface exhibiting the striped domains nanotexture typical of the antiferromagnetic monoclinic phase. For currents $I$ larger than 1.5 mA, the striped domains disappear in the region delimited by white dashed lines. This shows that a rhombohedral metallic filament is formed and widens as the current running through the device is increased.

The PEEM imaging is then repeated while driving a current $I$ through the device and measuring the voltage drop $V$ across the contacts. Figures 2b)-j) show the PEEM images acquired at increasing values of $I$, following the upward branch of the hysteresis cycle. The presence of an in-plane electric field across the electrodes introduces a weak image blurring that becomes significant for electric potential differences $V$ larger than 6-8 V. Despite this effect, the nanodomains are clearly resolved during the resistive switching process, which manifests itself in the voltage drop observed between 0.08 mA and 1.1 mA (Fig. 2 c) and d) respectively). As the current is further increased beyond the threshold value necessary for the switching, we progressively observe the melting of the monoclinic nanotexture in the region delimited by white dashed lines (Fig. 2 e)-j)) and the appearance of a channel with homogenous intensity. The XLD contrast measured in this region corresponds to the signal of the high-temperature rhombohedral phase. This is also confirmed from the angle dependence of the XLD signal [37]. As shown in the Supplementary Information Fig. S3, images collected with two different angles of the X-rays polarization with respect to the in-plane V_2O_3 axes show no intensity variation upon sample rotation in the metallic channel, as opposed to the lateral monoclinic domains, whose signal depends on the angle between the light polarization and $\overrightarrow{\epsilon}(\mathbf{r})$. We can thus attribute the flat signal region in the middle of the gap to the formation of a metallic channel with rhombohedral lattice structure ($\epsilon$=0). In the Supplementary Information Fig. S4, we report PEEM images obtained when repeating the experiment in the same conditions but with a larger field of view that allows to capture the whole gap of the device. The metallic channel always forms in the same location within the gap and no other metallic paths are observed. Furthermore, when the applied current is removed, the metallic channel disappears and the monoclinic domains form again with the same pre-switching configuration, indicating a volatile process.

Figure 3: a) Detail of the sample nanotexture in the region where the metallic filament is formed upon application of an above-threshold current. b) Sketch of the arrangement of monoclinic domains crossing at $60^{\circ}$ angle and forming a topological defect. Blue, red and yellow areas identify the three possible monoclinic domains corresponding to the three equivalent order parameter directions $\hat{\epsilon}_{n}$. The order parameter at the boundaries between different domains is oriented along $\hat{\epsilon}_{1}+\hat{\epsilon}_{2}$ ($2\pi/3$) for the red-blue interface and along $\hat{\epsilon}_{2}+\hat{\epsilon}_{3}$ ($4\pi/3$) for the blue-yellow interface. The mixed red-yellow triangular region indicates the local suppression of the strain at the topological defect. The energy functional $F$ as function of the order parameter $\eta$, sketched in the left and right panels, shows how a smaller value of $\epsilon^{2}$ due to the topological defect (green plot, solid line) results in a decrease of the insulator-metal energy difference $\Delta$.

The formation of the metallic channel is pinned by a specific topology of the lattice nanotexture, characterized by V-shaped domains, i.e., at the crossing point of domains with the same $\phi_{n}$ and directions that differ by a $\pi/3$ angle. In Fig. 3a) we report a detail of the switching region using a colorscale that highlights the nature of the three different domains: 1) light blue, which corresponds to a monoclinic distortion along the $\hat{\epsilon}_{2}$ direction ($\phi_{2}$=$\pi$); 2) red, which corresponds to a monoclinic distortion along the $\hat{\epsilon}_{1}$ direction ($\phi_{1}$=$\pi$/3); 3) yellow, which corresponds to a monoclinic distortion along the $\hat{\epsilon}_{3}$ direction ($\phi_{3}$=5$\pi$/3). As demonstrated in Ref. 37, the stabilization of the monoclinic nanotexture is driven by the Saint-Venant compatibility condition, which guarantees the continuity of the medium during a deformation and corresponds to the curl-free condition:

$$\overrightarrow{\nabla}\times\overrightarrow{\epsilon}(\mathbf{r})=0.$$ (3)

The conservation of the parallel component of the position dependent order parameter, $\overrightarrow{\epsilon}(\mathbf{r})$, across an interface between two different domains, as implied by the curl-free condition, has two major consequences:

• the interface between two different monoclinic domains must be oriented along the direction corresponding to the order parameter of the third domain;

• the interface between a monoclinic and a rhombohedral metallic domain must be oriented perpendicularly to the order parameter of the monoclinic domain.

If we consider, for example, a domain with order parameter along $\hat{\epsilon}_{2}$ (light blue in Figure 3b)), its interface is oriented along $\hat{\epsilon}_{1}$, i.e. at $\pi$/3 angle, when it neighbours with a $\hat{\epsilon}_{3}$ domain (yellow), whereas it is oriented along $\hat{\epsilon}_{3}$, i.e. at 2$\pi$/3 angle when it neighbours with a $\hat{\epsilon}_{1}$ domain (red), in agreement with the nanotexture reported in Fig. 3. The Saint-Venant condition corresponds to a fixed phase jump $\delta\phi$=2$\pi$/3 of $\overrightarrow{\epsilon}(\mathbf{r})$ across any interface between two monoclinic domains. We note that this condition is easily satisfied throughout the domains of the V${}_{2}$O${}_{3}$ sample, except for the vertex of the V-shaped structures formed by the merging of two domains with $\hat{\epsilon}_{2}$ order parameter direction (blue) and boundaries oriented along the $\hat{\epsilon}_{1}$ and $\hat{\epsilon}_{3}$ directions. If we consider a circuit $\Gamma_{1}$ across the boundary between two striped domains, the total phase shift is given by $\delta\phi$=+2$\pi$/3-2$\pi$/3=0 thus respecting the curl-free condition. In contrast, the topology of the V-shaped structure is such that, if we move around the internal apex ($\Gamma_{2}$), the total phase-shift is constrained to $\delta\phi$=+2$\pi$/3+2$\pi$/3=4$\pi$/3 thus breaking the curl-free condition. The direct consequence is that the vertex of the V shaped domains acts as a topological defect with fractional Hopf index (see Supplementary Information Section S6). These topological defects are inherently characterized by the strong frustration of the local value of the order parameter $\overrightarrow{\epsilon}(\mathbf{r})$ and local fluctuations on spatial and temporal scales that cannot be captured by the present experiment. We further note that the formation of this kind of topological defect is a direct and unavoidable consequence of the quasi-1D confined geometry of the system. Whereas the component of the order parameter parallel to the electrodes ($\epsilon_{||}$, see Fig. 3b) can be compensated outside the gap, the perpendicular component ($\epsilon_{\perp}$) should be minimized to avoid excessive strain energy accumulation within the gap region. Thus, considering the directions of $\overrightarrow{\epsilon}(\mathbf{r})$ at the boundaries between different monoclinic domains (see Fig. 3b), the formation of V-shaped domains is the only configuration that fulfils the requirement $\epsilon_{\perp}$=0.

Figure 4: a) I-V curve measured along with the collection of the PEEM images. The drop in voltage measured at I = 1.05 mA signals the first resistive switching. b) Line profiles of the PEEM images in Fig. 2. The grey shaded area indicates the region where the rhombohedral metallic channel is formed. c) Width $d$ of the metallic filament as a function of current $I$ in proximity of $I_{th}$. The blue and red markers represent the values of $d$ obtained experimentally from PEEM images. The green solid line is the estimate of the width $d$ according to the two parallel resistors model, which predicts a jump to a 200 $\textmu$m wide filament at $I_{th}$ (see Supplementary Information Section S5).

The suppression of the symmetry-breaking order parameter, $\overrightarrow{\epsilon}(\mathbf{r})$, at topological defects has far-reaching implications related to the nature of the resistive switching process. The electronic IMT can be described by a scalar order parameter $\eta(\mathbf{r})$ [37], which depends on the position $\mathbf{r}$ and is such that $\eta=-1$ in the metallic state and $\eta=+1$ in the insulating state. The coupling between the electronic and structural transitions can be described by the energy functional [37]:

$$F\left[\epsilon,\eta\right]\propto\!\int\!d\mathbf{r}\,\Big{\{}\big{(}\eta^{2}(\mathbf{r})-1\big{)}^{2}-g\big{(}\epsilon^{2}(\mathbf{r})-\epsilon^{2}_{t}(V)\big{)}\,\eta(\mathbf{r})\Big{\}}\,,$$ (4)

where $g$ is the coupling between the electronic order parameter and the strain and $\epsilon_{t}(V)$ is a threshold parameter that controls the first-order IMT and can depend on the applied voltage $V$. When $\epsilon^{2}(\mathbf{r})>\epsilon^{2}_{t}(V)$, the insulating phase with $\eta=+1$ is locally favoured, whereas for strain smaller than the threshold value, i.e. $\epsilon^{2}(\mathbf{r})<\epsilon^{2}_{t}(V)$, the metallic solution is stabilized. $\epsilon^{2}_{t}(V)$ thus represents the threshold above which the insulating monoclinic state ($\eta=+1$, $\epsilon\neq 0$) becomes stable. The description of the electric-field induced transition is based on the observation [18] that the electric field directly couples to the electronic bandstructure of a Mott insulator and makes the metallic phase more stable. The transition can thus be described assuming that $\epsilon^{2}_{t}(V)$ increases as the voltage $V$ is increased. The energy difference between the insulating and metallic phase can be expressed as $\Delta(\mathbf{r},V)=F[-1]-F[+1]\simeq g\left[\epsilon^{2}(\mathbf{r})-\epsilon^{2}_{t}(V)\right]$. If we start from the insulating phase with $\epsilon^{2}(\mathbf{r})>\epsilon^{2}_{t}(V=0)$, the IMT takes place when $V$ is increased up to the point that $\Delta(\mathbf{r},V)$=0. A topological defect, which locally suppresses $\epsilon^{2}(\mathbf{r})$, thus naturally acts as a seed with lower threshold as compared to the rest of the system.

Intriguingly, we also note from Eq. 4 that the IMT can take place at a non-zero value of $\epsilon^{2}(\mathbf{r})$, which makes possible the formation of a non-thermal metallic state ($\eta=-1$) with finite monoclinic distortion ($\epsilon^{2}(\mathbf{r})\lesssim\epsilon^{2}_{t}(V)$), as already observed in non-equilibrium experiments [37, 44]. The nature of the early-stage switching process can be inferred by a direct comparison between the electrical state of the device and the melting of the monoclinic domains. The $I-V$ curve of the device, as measured in-situ during the PEEM experiment, is plotted in Fig. 4a). PEEM images are recorded at specific values of $I$. The $I-V$ plot shows that the first resistive switching event occurs at the threshold current $I_{th}$ = 1.05 mA. In Figure 4b) we report a linecut of the PEEM image acquired at specific values of $I$; the image profile is taken along a line crossing the monoclinic domains in the middle of the device gap (see white solid line in Fig. 4, top panel). For large currents running through the device, the line profile in Fig. 4b) displays a flat region, which indicates the melting of the monoclinic nanodomains due to the formation of the rhombohedral metallic channel. As highlighted by the grey area in Fig. 4b), the width $d$ of the metallic filament increases with the current, from $d=0.23\pm 0.05$ µm at $I$ = 1.5 mA to $d=3.7\pm 0.2$ µm at $I$ = 10 mA.

Modelling the device as a circuit with two parallel resistors (see Supplementary Information Section S5) allows us to estimate the expected width $d$ of the rhombohedral filament corresponding to the observed voltage drop. For large currents running through the device, the experimental values of $d$ match well with what is expected to be the case when the metallic channel forming in the gap has the resistivity of the high-temperature rhombohedral phase, as shown in Fig. 4. However, in correspondence of the first resistive switching event at $I_{th}$=1.05 mA, this model already predicts the sudden formation of a $\sim 200$ nm wide metallic rhombohedral filament, which is not visible from PEEM measurements (see Fig. 4c and Supplementary Information Fig. S5), despite being well above the experimental resolution of the microscope. To explain this discrepancy, one might suspect that a rhombohedral metallic filament forms below the surface of the V_2O_3 film, where it is not detected by PEEM which is mainly a surface technique, sensitive to the first few nanometers. In fact, two arguments act against this possibility: i) the presence of the Cr_2O_3 buffer layer allows to reduce the substrate-film lattice mismatch from $4.2\%$ to $0.1\%$, thus removing almost entirely the residual epitaxial strain in the V${}_{2}$O${}_{3}$ film [42], which is known to suppress the monoclinic phase and favour interfacial metallicity [42, 45]. In contrast to highly-strained films, in which the metal to insulator resistivity jump is strongly suppressed [45], our films display the 5-order of magnitude resistivity change typical of the unstrained metal-to-insulator transition (see Fig. S1); ii) the curl-free conditions force the interface between monoclinic and rhombohedral metallic regions to be oriented perpendicularly to the order parameter of the monoclinic domain. The formation of a below-surface metallic layer would lead to a sharp ($\ll$ 20 nm) monoclinic-rhombohedral interface parallel to $\overrightarrow{\epsilon}$, thus leading to a dramatic increase of the strain energy of the system. Our results are compatible with a complex scenario in which the topology-driven resistive switching likely occurs first via the sudden transformation of a single 200 nm wide insulating monoclinic domain into a metallic channel with a non-thermal monoclinic lattice structure. At a second stage, the Joule heating leads to the thermally driven monoclinic-to-rhombohedral structural transition and the formation of rhombohedral metallic channels perpendicular to both the metallic electrodes and the $\hat{\epsilon}_{2}$ order parameter direction, as observed in Fig. 2.

The X-ray-based nanoimaging of a Mott device under operating conditions allowed us to simultaneously capture the formation of nanoscale conductive paths and the topology of the underlying symmetry-broken nanotexture. The present results expand our knowledge of the resistive switching process in Mott materials by demonstrating the leading role of inherent topological defects in the firing process. The combination of the methodologies here introduced with nanoscale strain engineering approaches unlocks the gate to new opportunities to manipulate topological defects and control the electronic switching dynamics in real devices, such as Mott-transition-based RRAM [46, 47], Mott memristor [48, 49, 50] and artificial neurons [51, 52]. The concept of topology-driven resistive switching will be key to assessing the possible non-thermal nature of the early stage electronic phase [37] as well as the microscopic origin of memory and non-volatile effects recently observed in Mott devices [6]. We finally note that the intimate relation between topological defects and electronic phase transitions is a general concept, potentially extendable to any system that undergoes a first-order phase transition accompanied by some form of symmetry breaking, as described by the energy functional (4). Relevant examples embrace transition-metal oxides [53, 3], such as vanadates, nickelates and manganites, and layered materials, such as 1$T$-TaS${}_{2}$ [54, 55, 56, 57], in which the insulator-to-metal transition is accompanied by charge-, lattice- and orbital-ordered states with reduced symmetry. Other interesting platforms are cuprate superconductors [58] and kagome metals [59] in which light- or magnetic-induced discontinuous electronic transitions coexist with charge-order. We thus provide a new framework for non-equilibrium electronic phase transitions and optical control of hidden states [60, 61, 57] in a broad class of quantum materials, in which the early-stage dynamics can be reversibly controlled by light or voltage, exploiting topological defects of the underlying symmetry-breaking order parameter [62, 57, 63].

We thank Diamond Lights Source for the provision of beamtime under proposal numbers MM-27218, MM-31711 and MM-34455. We thank Manuel R. Osorio and Fernando J. Urbanos for the fabrication of sample electrodes at the Centre for Micro and Nanofabrication of IMDEA Nanociencia. A.M., S.M. and C.G. acknowledge financial support from MIUR through the PRIN 2015 (Prot. 2015C5SEJJ001) and PRIN 2017 (Prot. 20172H2SC4_005) programs and from the European Uninion - Next Generation EU through the MUR-PRIN2022 (Prot. 20228YCYY7) program. Funded by the European Union - Next Generation EU C.G. acknowledges support from Università Cattolica del Sacro Cuore through D.1, D.2.2 and D.3.1 grants. S.M. acknowledges partial financial support through the grant ”Finanziamenti ponte per bandi esterni” from Università Cattolica del Sacro Cuore. I.F.C. and M.M. acknowledge support from the “Severo Ochoa” Programme for Centres of Excellence in R&D (CEX2020-001039-S) and the Spanish AEI-MCIN PID2021-122980OB-C52 (ECoSOx-ECLIPSE). I.F.C holds a FPI fellowship from the Spanish AEI-MCIN (PRE2020-092625). W.-F.H., S.M., J.W.S. and J.-P.L. acknowledge financial support by the KU Leuven Research Funds Project No. C14/21/083, iBOF/21/084, KAC24/18/056 and C14/17/080, as well as the FWO AKUL/13/19 and AKUL/19/023, and the Research Funds of the INTERREG-E-TEST Project (EMR113) and INTERREG-VL-VL-PATHFINDER Project (0559).