Superconducting Diode Effect Sign Change in Epitaxial Al-InAs Josepshon Junctions
Abstract
Abstract
There has recently been a surge of interest in studying the superconducting diode effect (SDE) partly due to the possibility of uncovering the intrinsic properties of a material system. A change of sign of the SDE at finite magnetic field has previously been attributed to different mechanisms. Here, we observe the SDE in epitaxial Al-InAs Josephson junctions with strong Rashba spin-orbit coupling (SOC). We show that this effect strongly depends on the orientation of the in-plane magnetic field. In the presence of a strong magnetic field, we observe a change of sign in the SDE. Simulation and measurement of supercurrent suggest that depending on the superconducting widths, , this sign change may not necessarily be related to 0– or topological transitions. We find that the strongest sign change in junctions with narrow is consistent with SOC-induced asymmetry of the critical current under magnetic-field inversion, while in wider , the sign reversal could be related to 0– transitions and topological superconductivity.
I Introduction
Nonreciprocity in non-centrosymmetric quantum systems has been well studied in semiconductors as they are essential for the rectification function in electrical diodes and solar cells. There has been a recent rise of interest in nonreciprocity in superconductors, implying a progress towards designing superconducting diodes and its possible application in modern electronic circuits, sensors, and detectors [1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12]. Nonreciprocal critical currents in superconductors occur when the magnitude of the critical supercurrent, , depends on the direction in which the current is swept. Theoretically, the so-called diode effect can occur when both inversion and time reversal symmetries are broken, where the latter can be achieved by magnetic proximity effect, in magnetic Josephson junctions, or by applying an external magnetic field. This effect has been attributed to the presence of finite-momentum Cooper pairs and the change in the nature of superconductivity [13, 14, 7, 15, 16]. Recent studies have suggested the existence of the superconducting diode effect (SDE) in Josephson junctions (JJs) with large Rashba spin-orbit coupling (SOC) [2, 17, 18, 6, 1, 5, 19]. The magnitude of the supercurrent in JJs with SOC depends on the direction of the magnetic field, as the Rashba and Dresselhaus effects can have different contributions [20, 21]. Therefore, investigating the SDE through a JJ can provide information about the SOC in its semiconductor.
Planar JJs fabricated on epitaxial Al-InAs heterostructures are great candidates to study SDE due to their strong SOC [22, 3, 2]. Such devices have also shown signatures of topological phase transition when their time reversal symmetry is broken by an in-plane magnetic field [23, 24, 25]. Recently, Costa et al. [17] have reported a sign reversal of the AC SDE in multi-channel JJs based on Al-InAs with strong SOC subjected to a magnetic field, and related it to a 0–-like transition induced by the Zeeman interaction in the device. Conversely, Banerjee et al. [25] have proposed a SDE originating from finite-momentum Cooper pairing solely due to orbital effects, without invoking SOC or Zeeman interaction.
In this work, we study epitaxial Al-InAs JJs with various superconductive contact widths, . By applying a magnetic field perpendicular to the current and parallel to the junction, we observe nonreciprocal critical currents due to the finite-momentum Cooper pairing enabled by the coexistence of strong Rashba SOC and the Zeeman interaction. We observe a SOC-induced shift, , of the magnetic field yielding the maximum of the critical current amplitude and use it to estimate the Rashba SOC strength in the JJ. In the absence of the magnetic field, time-reversal symmetry is restored and the SDE vanishes. However, the SDE can also vanish at certain finite magnetic fields and changes sign below the superconductor critical field, . We consider JJs with various superconducting widths, , and observe zeros of the SDE, across which the critical current difference characterizing the SDE exhibits sign reversals at finite values of the magnetic field. We attribute the sign reversals to i) 0–-like jumps of the ground-state superconducting phase difference for wide and ii) SOC-induced asymmetry of the critical current under magnetic-field inversion with respect to the field-shift, for narrow . In a gated junction, we observe the SDE and SOC-induced shift at zero and positive gate voltages where the SOC is strong in our system. However, the SDE is negligible when a negative gate voltage is applied, suggesting that the Rashba strength is relatively small at negative gate voltages. This agrees with our previous studies of SOC strength measurements on gated Hall bars.
II Results and Discussion
II.1 Devices and measurement details
Our junctions are based on epitaxial superconducting Al thin films grown in-situ on InAs heterostructures by molecular beam epitaxy on a InP substrate followed by a graded buffer layer [22, 26, 27]. Typically, the critical field of thin film of Al is greater than 1 T. Fig. 1(a) shows a general schematic of our planar JJs. We study junctions with varying superconducting widths from to . All the junctions are wide and are fabricated using a transene selective wet etching of Al. Fig. 1(b) shows a false colored scanning electron microscopy (SEM) image of a typical long junction with superconducting width of . The Al induced gap in our junctions is about estimated from critical temperature, . The semiconductor-superconductor transparency of our junctions are reported in our previous works [28, 29, 30] and can host modes with near unity transparency. All the measurements in this study are performed at in a dilution refrigerator equipped with a three-axis vector magnet. As shown in Fig. 1(b), the -axis of the magnet is perpendicular to the sample plane, while and -axes are in-plane components aligned parallel to the current and junction, respectively.
Fig. 1(c) presents the differential resistance as a function of the bias current and applied out-of-plane magnetic field for the junction JJ1 with when the in-plane field is set to zero. The observed Fraunhofer pattern shows a hysteresis due to heating effects when bias is swept through zero [31, 28]. The critical current of the hot electrons branch, where the bias goes from high bias to zero, is clearly smaller than the critical current of the cold electrons branch going from zero to high bias. This is due to the difference between the effective electronic temperature of the hot and cold electrons branches before the transition to or out of the superconducting state. Such a hysteretic behavior leads to different values of critical current on each side, as can be observed in Fig. 1(d) for JJ1, and has to be avoided for accurate SDE measurements. In addition, Fig. 1(c) shows that the cold electron branch exhibits a broad switching distribution near the Fraunhofer maximum with several premature switching events. For the rest of this study, we therefore only derive the values of the critical current from the hot electrons branch, going from high bias to zero bias as shown in Fig. 1(e). These two values, i.e. the positive and negative retrap** currents, are expected to be equal in magnitude in reciprocal measurements of a conventional device without presence of in-plane magnetic field.
II.2 Low in-plane field dependence
By carefully aligning the magnet directions to Josephson junction and eliminating unwanted out-of-plane component of magnetic field (), we measure the critical current in the presence of an in-plane magnetic field. Fig. 2(a) and (b) show the measured magnitude of the critical current for JJ1 with and JJ2 with when 0 T and the in-plane magnetic field with strength is parallel to the current. Blue circles and red cross marks correspond to measurement of the magnitude of the critical current when the bias is swept from negative high bias to zero and from positive high bias to zero, respectively. We find that the magnitude of the critical current in both directions is the same and there is no sign of nonreciprocity when the applied in-plane magnetic field is parallel to the current. The absence of SDE when the field is parallel to the current indicates that the dominant SOC in the junctions is of Rashba type, which is in agreement with our previous works [26, 32].
When the in-plane magnetic field is applied perpendicular to the current, in the -direction, we find a difference between the forward and reverse critical currents. Fig. 2(c) and (d) show the dependence of the absolute value of critical current on for JJ1 and JJ2. We observe a clear nonreciprocal behavior, where the critical current is larger for positive than for negative bias when . This behaviour is reversed when the in-plane field direction is flipped to , in agreement with the theoretically expected symmetry relation . Details of the experimental measurements and analyses are given in Supplementary Note 1. We extract at each in-plane magnetic field from the maximum of the Fraunhofer pattern at that field (Fig. S3 and S4 for more details). The same measurements were done on three additional devices with , and and showed the same results, as presented in Fig. S5 and S6 of Supplementary Note 1. Those devices exhibit the same behavior as JJ1 and JJ2. In all cases we observe a shift, in the magnetic fields at which the critical currents reach their maximum values when . The shift is positive for the critical current corresponding to positive bias and negative for the case of negative bias. In JJ1 and JJ2, the magnitude of shift on both negative and positive sides are the same and equal to =15 mT. Although the value of at few magnetic fields are very close to each other, but from the zoom-in plots of the data presented in Fig. S7, S8 and S9 for JJ1, we can see that the maximum of is at 15 mT for both positive and negative fields (dashed black line in both figures).
This observed shift is captured by our numerical tight-binding simulations (see details in Supplementary Note 2). The result of the tight-binding simulation in Fig. S13(a) for a junction with clearly shows the superconducting diode effect in the splitting of , as well as the symmetry with respect to the sign of . Moreover, indicates the presence of SOC in the junction and obeys the symmetry relation, , where denotes the strength of the Rashba SOC. (We neglect Dresselhaus SOC for simplicity, as Rashba SOC is typically dominant in this system [32].) As an illustration, we perform numerical calculations of the magnetic field dependence of the critical currents for JJ2 and different values of the Rashba SOC strength. By tracking the fields at which the numerically calculated critical current maxima occur, we extract the -dependence of [see Fig. S13(b)]. The black, dashed line is just a linear fit to guide the eye. Comparing the field-shift value extracted from the experimental and the corresponding numerical simulations, we estimate the Rashba SOC strength in device JJ2 to be about 10 meV nm. This value is in overall agreement with values of in InAs extracted through weak antilocalization measurements [26, 32]. Although Fig. S13(b) was specifically computed for JJ2, from the fabrication process and similar composition, we expect all the samples to have similar SOC strengths.
Complementary to the numerical simulations, we provide approximate analytical expressions for the normalized critical currents at low field (see Supplementary Note 2 for detailed information),
(1) |
where is the maximum absolute value of the critical current, , , and (with as the junction transparency) is the magnitude of the field at which is maximum. Here is the effective g-factor, the Bohr magneton, the Fermi wavevector, the Thouless energy, the Fermi velocity, and , with representing the effective mass. As discussed in Supplementary Note 2, equation (1) was obtained in the limits where is the superconducting coherence length and , assuming the Zeeman interaction is sizable in the N region only, and again neglecting Dresselhaus SOC. Therefore it is not in quantitative agreement with finite in experimental devices. However, Eq. (1) can provide a qualitative description of the main trends exhibited by the critical currents. In fact, Eq. (1) reproduces well the functional behavior of the experimental data at low field. Fig. S10 shows the experimental data of all the junctions studied fitted to Eq. (1) using , and as fitting parameters, while Fig. S11 shows that is not predictive of the observed in the presented devices. According to the simplified analytical model, the asymptotic behavior of at low magnetic fields does not only depend on the SOC strength but also on other system parameters, like the junction transparency (see Supplementary Note 2 and Ref. 33). Hence devices exhibiting larger values of (see bottom row of Fig. S10) may still have similar SOC strength with lower transparency.
Our experimental data together with numerical simulation suggest that the observed SDE originates from the finite-momentum Cooper pairing induced by the shift of the Fermi contours when the Zeeman interaction and the Rashba SOC coexist as illustrated in Fig. S13(c)-(e). This picture implicitly follows from the microscopic model used in the numerical simulations, which in turn are able to explain the trends observed in the experimental data. Note that the observed SDE depends on both the magnetic field strength and direction. Therefore, the non-intrisic contributions to the SDE originating from gate-dependent effective disorder in the superconducting electrodes [34], which are independent of the magnetic field, can be ruled out in our devices. Vortex asymmetric motion, another mechanism that may induce a non-reciprocal behavior [35, 36, 37], can also be disregarded as the origin of the SDE in our samples. Indeed, vortex asymmetric motion is expected to be relevant near the superconducting transition when the temperature and/or the applied field are close to their superconducting critical values. However, the SDE here reported is finite at magnetic fields as low as few mT (i.e., at fields much smaller than the critical field T) and temperature of 30 mK (well below K).
In the regime , where , , and denote the Zeeman energy, the Rashba SOC strength and the Fermi wave vector, respectively, the Fermi contours in the N region can be approximated as,
(2) |
where , , and and determine the directions of the wave vector and magnetic field with respect to the -axis, respectively. The -component of the total momentum of the pairs is,
(3) |
and the Cooper pair wave function across the junction can be approximated as,
(4) |
and can be rewritten in terms of singlet, and triplet, components [38],
(5) |
For , an inversion of the magnetic field orientation reverses the direction of the Fermi contours shift without affecting the spin orientation. Therefore, the coexistence of the singlet and triplet components in the presence of SOC breaks the inversion symmetry of the wave function with respect to the magnetic field direction, resulting in a non-reciprocal response with distinct forward and reverse critical currents. However, the SDE vanishes when the magnetic field is oriented along the -axis (see Fig. 2(a–b)) for in this case and in Eq. (3).
II.3 High in-plane field dependence
We further investigate the nonreciprocity of the critical currents at higher in-plane magnetic fields perpendicular to the current () in the devices JJ1 and JJ2. Fig. 3(a) and (b) show the absolute value of the critical currents for each junction as a function of . A dip and peak in of JJ1 is observed around . Previous studies have suggested such a behavior can be related to the closing and reopening of the superconducting gap [39, 24] and a topological phase transition. Our numerical simulations exhibit a phase transition at magnetic field near 0.6 T for as shown in Fig. S14. In contrast, JJ2 data does not show any peak or dip in the supercurrent in Fig. 3(b). Numerical simulations also do not show a phase transition for the ground state of JJ2 with below 1 T as shown in Fig. S15.
Fig. 3(c) plots the difference between the absolute values of the critical currents for positive and negative biases , as a function of . The results evidence the anti-symmetric character of , which for both junctions changes its sign when the magnetic field is inverted. However, also exhibit zeros at certain values of , across which sign reversals not related to magnetic field inversion are observed. This is particularly apparent for the device JJ2 (blue symbols) at fields T, as shown in Fig. 3(c).
From a comparison between the experimental results and the numerical simulations, we identify two possible mechanisms responsible for the zeros of and their associated SDE sign reversals. According to Eq. (1), the SOC induces an asymmetry in the critical currents under the magnetic field inversion with respect to , with . This asymmetry is apparent in Fig. 2(c)-(d) and Fig. 3(a)-(b). The coexistence of a finite magnetic shift, , and a strong SOC-induced critical current asymmetry can cause and to cross at a finite magnetic field and produce a sign reversal in the SDE without involving 0–-like transitions. This situation is apparent in JJ2 from Fig. 3(b) and (c), where a critical current crossing and corresponding sign reversal of at T are observed, respectively. The numerical simulations are in good agreement with the experimental data of JJ2, predicting a critical current crossing at T, which is unrelated to the 0– transition at T (see Fig. S15 in Supplementary Note 2).
As discussed above, the SDE originates from finite-momentum Cooper pairing qualitatively described by a wave function lacking inversion symmetry with respect to when both Rashba SOC and Zeeman interaction are present. However, it follows from Eq. (5) that the inversion symmetry with respect to is reestablished when either the singlet or triplet component vanishes at the S/N interfaces located at and , i.e., when , where is an integer number. Therefore, junctions with exhibit zeros of when,
(6) |
The re-scaling factor has been introduced to account for the fact that the Zeeman field is likely present over the whole system and not only in the semiconductor region.
The zeros (and their associated SDE sign reversals) corresponding to odd integers in Eq. (6), say (with an integer), can be associated with 0–-like transitions the junction would experience close to equilibrium. Indeed, in the absence of currents, the superconducting phase difference self-tunes to a value (referred to as the ground-state phase difference) that minimizes the free energy of the system. For the singlet component of the wave function at the two superconducting leads has the same sign, indicating that . However, when [i.e., ], the ground-state phase jumps from 0 to and the singlet at the two superconducting leads acquire opposite signs for . Therefore, SDE sign reversals corresponding to odd values of in Eq. (6) are associated to 0–-like (or –0-like) transitions, while additional sign reversals are expected to occur between 0– and –0-like transitions, when is even. The 0–-like ground-state phase jump has been identified as a possible signature of topological phase transitions in planar JJs [39, 24]. Hence, the nodes of corresponding to odd may indirectly signal a transition into the topological superconducting state. However, such a signature is not conclusive, especially in JJs with narrow superconducting leads, where ground-state phase jumps are not necessarily associated to topological phase transitions [40, 41].
The numerical simulations for devices JJ1 and JJ2 reveal 0–-like jumps of the ground-state phase at T and T, respectively [see Figs. S13 and S14(b) in Supplementary Note 2], suggesting that if the changes sign at higher fields [see insets in Fig. 3(c)] they could be associated to 0–-like transitions with . However, we find that the measured current difference, , is too small in experiment and is difficult to conclusively establish the existence of these sign reversals in range of 0.6 T to 1 T.
II.4 Gate dependence
To further investigate the effect of SOC on the SDE, we make a gated device JJ3 with by depositing 60 nm AlO followed by 5/40nm Cr/Au on the junction. The thickness of Al in JJ3 is 8nm and the QW has the exact same structure as the QW in other junctions in this study. Fig. 4(a–c) shows the measured magnitude of the critical current of JJ3 at three different gate voltages when and the in-plane magnetic field is perpendicular to the current (). A clear nonreciprocal behavior can be seen when = 0 and +3V. However, the SDE is negligible when . It has been reported that in InSb nanowires, the SDE drastically depends on the applied gate and orientation of magnetic field and can be suppressed in the absence of SOC in the system [8]. In previous studies of SOC effects in our system with gated Hall bar measurements, we reported that the Rashba strength can be tuned by gate voltage and is smaller at low densities[32, 26]. Fig. 4(d) shows the differential resistance of JJ3 as a function of bias and gate voltage at zero magnetic field. At the density is much lower than 0 and +3V. The absence of SDE in Fig. 4(c) suggests that at V the Rashba parameter is significantly smaller than the SOC strength at zero and positive gate voltages.
III Conclusion
In summary, we have studied the superconducting diode effect in epitaxial InAs/Al Josephson junctions with different superconducting width and showed that the SDE depends on the orientation of the applied in-plane magnetic field in the system. By measuring the supercurrent of the junction, we observe SDE only when the in-plane field is perpendicular to the current. We observe a shift in magnetic field yielding the maximum critical current and obtain an analytical expression describing the critical current behavior at low magnetic field. We propose a method for estimating the Rashba parameter from the measurement of the magnetic field shift of the SDE and numerical simulations. The results are in good agreement with values previously reported for our system. We also measure the SDE at high magnetic fields and observe a sign change in the of the junction at T. Using our Tight binding simulation, we conclude that this sign change is not necessarily an indicator of 0– or topological transitions in the system. By measuring the SDE in a gated junction at three different gate voltages, we showed that the SDE strongly depends on the applied gate voltage and the SOC strength in our system.
IV Methods
Wafers are grown by molecular beam epitaxy. Devices are fabricated using a combination of wet etching and deposition techniques after patterning polymethyl methacrylate (PMMA) via electron beam lithography. Device mesa features are defined by a deep wet etch with 85% concentrated phosphoric acid, 30% concentrated hydrogen peroxide, and deionized water in a volumetric ratio of 1:1:40 after selectively etching the aluminum top layer with Transene Aluminum Etchant Type D. Junction weak links and smaller device features are defined by a subsequent aluminum etch. Gated devices subsequently undergo dielectric deposition of aluminum oxide via atomic layer deposition, and titanium/gold gates are deposited via electron beam evaporation. D.c. measurements are performed in a dilution refrigerator at a temperature of around using standard low-frequency lock-in amplification techniques with excitation currents of at most and frequencies of around . Magnetic field is generated by a three-axis superconducting vector magnet.
V Data Availability
The transport data generated in relation to this study are available in Zenodo (doi:10.5281/zenodo.10810819) [42].
VI Code Availability
All code related to this work is available from the corresponding author upon request.
References
- Ando et al. [2020] F. Ando, Y. Miyasaka, T. Li, J. Ishizuka, T. Arakawa, Y. Shiota, T. Moriyama, Y. Yanase, and T. Ono, Observation of superconducting diode effect, Nature 584, 373 (2020).
- Baumgartner et al. [2022a] C. Baumgartner, L. Fuchs, A. Costa, J. Picó-Cortés, S. Reinhardt, S. Gronin, G. C. Gardner, T. Lindemann, M. J. Manfra, P. E. Faria Junior, D. Kochan, J. Fabian, N. Paradiso, and C. Strunk, Effect of Rashba and Dresselhaus spin–orbit coupling on supercurrent rectification and magnetochiral anisotropy of ballistic Josephson junctions, Journal of Physics: Condensed Matter 34, 154005 (2022a).
- Baumgartner et al. [2022b] C. Baumgartner, L. Fuchs, A. Costa, S. Reinhardt, S. Gronin, G. C. Gardner, T. Lindemann, M. J. Manfra, P. E. Faria Junior, D. Kochan, J. Fabian, N. Paradiso, and C. Strunk, Supercurrent rectification and magnetochiral effects in symmetric Josephson junctions, Nature Nanotechnology 17, 39 (2022b).
- Bauriedl et al. [2022] L. Bauriedl, C. Bäuml, L. Fuchs, C. Baumgartner, N. Paulik, J. M. Bauer, K.-Q. Lin, J. M. Lupton, T. Taniguchi, K. Watanabe, C. Strunk, and N. Paradiso, Supercurrent diode effect and magnetochiral anisotropy in few-layer NbSe2, Nature Communications 13, 4266 (2022).
- Wu et al. [2022] H. Wu, Y. Wang, Y. Xu, P. K. Sivakumar, C. Pasco, U. Filippozzi, S. S. P. Parkin, Y.-J. Zeng, T. McQueen, and M. N. Ali, The field-free Josephson diode in a van der Waals heterostructure, Nature 604, 653 (2022).
- Pal et al. [2022] B. Pal, A. Chakraborty, P. K. Sivakumar, M. Davydova, A. K. Gopi, A. K. Pandeya, J. A. Krieger, Y. Zhang, M. Date, S. Ju, N. Yuan, N. B. M. Schröter, L. Fu, and S. S. P. Parkin, Josephson diode effect from Cooper pair momentum in a topological semimetal, Nature Physics 18, 1228 (2022).
- Yuan and Fu [2022] N. F. Q. Yuan and L. Fu, Supercurrent diode effect and finite-momentum superconductors, Proceedings of the National Academy of Sciences 119, e2119548119 (2022).
- Mazur et al. [2022] G. P. Mazur, N. van Loo, D. van Driel, J.-Y. Wang, G. Badawy, S. Gazibegovic, E. P. A. M. Bakkers, and L. P. Kouwenhoven, The gate-tunable Josephson diode (2022), preprint at https://arxiv.longhoe.net/abs/2211.14283.
- Sundaresh et al. [2023] A. Sundaresh, J. I. Väyrynen, Y. Lyanda-Geller, and L. P. Rokhinson, Diamagnetic mechanism of critical current non-reciprocity in multilayered superconductors, Nat. Commun. 14, 1628 (2023).
- Gupta et al. [2023] M. Gupta, G. V. Graziano, M. Pendharkar, J. T. Dong, C. P. Dempsey, C. Palmstrøm, and V. S. Pribiag, Gate-tunable superconducting diode effect in a three-terminal Josephson device, Nature Communications 14, 3078 (2023).
- Zhang et al. [2022] B. Zhang, Z. Li, V. Aguilar, P. Zhang, M. Pendharkar, C. Dempsey, J. S. Lee, S. D. Harrington, S. Tan, J. S. Meyer, M. Houzet, C. J. Palmstrom, and S. M. Frolov, Evidence of 0-Josephson junction from skewed diffraction patterns in Sn-InSb nanowires (2022), preprint at https://arxiv.longhoe.net/abs/2212.00199.
- Margineda et al. [2023] D. Margineda, A. Crippa, E. Strambini, Y. Fukaya, M. T. Mercaldo, M. Cuoco, and F. Giazotto, Sign reversal diode effect in superconducting Dayem nanobridges, Communications Physics 6, 1 (2023).
- Davydova et al. [2022] M. Davydova, S. Prembabu, and L. Fu, Universal Josephson diode effect, Science Advances 8, eabo0309 (2022).
- Daido et al. [2022] A. Daido, Y. Ikeda, and Y. Yanase, Intrinsic Superconducting Diode Effect, Physical Review Letters 128, 037001 (2022).
- Ilic and Bergeret [2022] S. Ilic and F. Bergeret, Theory of the Supercurrent Diode Effect in Rashba Superconductors with Arbitrary Disorder, Physical Review Letters 128, 177001 (2022).
- He et al. [2022] J. J. He, Y. Tanaka, and N. Nagaosa, A phenomenological theory of superconductor diodes, New Journal of Physics 24, 053014 (2022).
- Costa et al. [2023a] A. Costa, C. Baumgartner, S. Reinhardt, J. Berger, S. Gronin, G. C. Gardner, T. Lindemann, M. J. Manfra, J. Fabian, D. Kochan, N. Paradiso, and C. Strunk, Sign reversal of the Josephson inductance magnetochiral anisotropy and 0–-like transitions in supercurrent diodes, Nature Nanotechnology 18, 1266 (2023a).
- Turini et al. [2022] B. Turini, S. Salimian, M. Carrega, A. Iorio, E. Strambini, F. Giazotto, V. Zannier, L. Sorba, and S. Heun, Josephson Diode Effect in High-Mobility InSb Nanoflags, Nano Letters 22, 8502 (2022).
- Jeon et al. [2022] K.-R. Jeon, J.-K. Kim, J. Yoon, J.-C. Jeon, H. Han, A. Cottet, T. Kontos, and S. S. P. Parkin, Zero-field polarity-reversible Josephson supercurrent diodes enabled by a proximity-magnetized Pt barrier, Nature Materials 21, 1008 (2022).
- Pakizer et al. [2021] J. D. Pakizer, B. Scharf, and A. Matos-Abiague, Crystalline anisotropic topological superconductivity in planar josephson junctions, Phys. Rev. Res. 3, 013198 (2021).
- Pekerten et al. [2022] B. Pekerten, J. D. Pakizer, B. Hawn, and A. Matos-Abiague, Anisotropic topological superconductivity in josephson junctions, Phys. Rev. B 105, 054504 (2022).
- Shabani et al. [2016] J. Shabani, M. Kjaergaard, H. J. Suominen, Y. Kim, F. Nichele, K. Pakrouski, T. Stankevic, R. M. Lutchyn, P. Krogstrup, R. Feidenhans’l, S. Kraemer, C. Nayak, M. Troyer, C. M. Marcus, and C. J. Palmstrøm, Two-dimensional epitaxial superconductor-semiconductor heterostructures: A platform for topological superconducting networks, Physical Review B 93, 155402 (2016).
- Fornieri et al. [2019] A. Fornieri, A. M. Whiticar, F. Setiawan, E. Portoles, A. C. C. Drachmann, A. Keselman, S. Gronin, C. Thomas, T. Wang, R. Kallaher, G. C. Gardner, E. Berg, M. J. Manfra, A. Stern, C. M. Marcus, and F. Nichele, Evidence of topological superconductivity in planar Josephson junctions, Nature 569, 89 (2019).
- Dartiailh et al. [2021a] M. C. Dartiailh, W. Mayer, J. Yuan, K. S. Wickramasinghe, A. Matos-Abiague, I. Žutić, and J. Shabani, Phase Signature of Topological Transition in Josephson Junctions, Physical Review Letters 126, 036802 (2021a).
- Banerjee et al. [2023] A. Banerjee, M. Geier, M. A. Rahman, C. Thomas, T. Wang, M. J. Manfra, K. Flensberg, and C. M. Marcus, Phase Asymmetry of Andreev Spectra from Cooper-Pair Momentum, Physical Review Letters 131, 196301 (2023).
- Wickramasinghe et al. [2018] K. S. Wickramasinghe, W. Mayer, J. Yuan, T. Nguyen, L. Jiao, V. Manucharyan, and J. Shabani, Transport properties of near surface InAs two-dimensional heterostructures, Applied Physics Letters 113, 262104 (2018).
- Strickland et al. [2022] W. M. Strickland, M. Hatefipour, D. Langone, S. M. Farzaneh, and J. Shabani, Controlling Fermi level pinning in near-surface InAs quantum wells, Applied Physics Letters 121, 092104 (2022).
- Mayer et al. [2019] W. Mayer, J. Yuan, K. S. Wickramasinghe, T. Nguyen, M. C. Dartiailh, and J. Shabani, Superconducting proximity effect in epitaxial al-InAs heterostructures, Applied Physics Letters 114, 103104 (2019).
- Mayer et al. [2020] W. Mayer, M. C. Dartiailh, J. Yuan, K. S. Wickramasinghe, E. Rossi, and J. Shabani, Gate controlled anomalous phase shift in al/inas josephson junctions, Nature Communications 11, 212 (2020).
- Dartiailh et al. [2021b] M. C. Dartiailh, J. J. Cuozzo, B. H. Elfeky, W. Mayer, J. Yuan, K. S. Wickramasinghe, E. Rossi, and J. Shabani, Missing shapiro steps in topologically trivial josephson junction on InAs quantum well, Nature Communications 12, 78 (2021b).
- Courtois et al. [2008] H. Courtois, M. Meschke, J. T. Peltonen, and J. P. Pekola, Origin of Hysteresis in a Proximity Josephson Junction, Physical Review Letters 101, 067002 (2008).
- Farzaneh et al. [2024] S. M. Farzaneh, M. Hatefipour, W. F. Schiela, N. Lotfizadeh, P. Yu, B. H. Elfeky, W. M. Strickland, A. Matos-Abiague, and J. Shabani, Observing magnetoanisotropic weak antilocalization in near-surface quantum wells, Physical Review Research 6, 013039 (2024), 2208.06050 .
- Costa et al. [2023b] A. Costa, J. Fabian, and D. Kochan, Microscopic study of the Josephson supercurrent diode effect in Josephson junctions based on two-dimensional electron gas, Physical Review B 108, 054522 (2023b).
- Lo et al. [2013] S.-T. Lo, K. Y. Chen, S. Lin, J.-Y. Wu, T. L. Lin, M. R. Yeh, T.-M. Chen, and C.-T. Liang, Controllable disorder in a hybrid nanoelectronic system: Realization of a superconducting diode, Sci. Rep 3, 2274 (2013).
- Lustikova et al. [2018] J. Lustikova, Y. Shiomi, N. Yokoi, N. Kabeya, N. Kimura, K. Ienaga, S.-i. Kaneko, S. Okuma, S. Takahashi, and E. Saitoh, Vortex rectenna powered by environmental fluctuations, Nat. Commun. 9, 4922 (2018).
- Zhang et al. [2020] E. Zhang, X. Xu, Y.-C. Zou, L. Ai, X. Dong, C. Huang, P. Leng, S. Liu, Y. Zhang, Z. Jia, X. Peng, M. Zhao, Y. Yang, Z. Li, H. Guo, S. J. Haigh, N. Nagaosa, J. Shen, and F. Xiu, Nonreciprocal superconducting nbse2 antenna, Nat. Commun. 11, 5634 (2020).
- Masuko et al. [2022] M. Masuko, M. Kawamura, R. Yoshimi, M. Hirayama, Y. Ikeda, R. Watanabe, J. J. He, D. Maryenko, A. Tsukazaki, K. S. Takahashi, M. Kawasaki, N. Nagaosa, and Y. Tokura, Nonreciprocal charge transport in topological superconductor candidate bi2te3/pdte2 heterostructure, npj Quantum Mater. 7, 104 (2022).
- Eschrig [2015] M. Eschrig, Spin-polarized supercurrents for spintronics: a review of current progress, Rep. Prog. Phys. 78, 104501 (2015).
- Pientka et al. [2017] F. Pientka, A. Keselman, E. Berg, A. Yacoby, A. Stern, and B. I. Halperin, Topological Superconductivity in a Planar Josephson Junction, Phys. Rev. X 7, 021032 (2017).
- Setiawan et al. [2019] F. Setiawan, A. Stern, and E. Berg, Topological superconductivity in planar josephson junctions: Narrowing down to the nanowire limit, Phys. Rev. B 99, 220506(R) (2019).
- Pakizer and Matos-Abiague [2021] J. D. Pakizer and A. Matos-Abiague, Signatures of topological transitions in the spin susceptibility of josephson junctions, Phys. Rev. B 104, L100506 (2021).
- Schiela et al. [2024] W. F. Schiela, N. Lotfizadeh, B. Pekerten, P. Yu, B. H. Elfeky, W. M. Strickland, A. Matos-Abiague, and J. Shabani, Data from “Superconducting Diode Effect Sign Change in Epitaxial Al-InAs Josepshon Junctions”, 10.5281/zenodo.10810819 (2024).
VII Acknowledgments
This work is supported in part by DARPA Topological Excitations in Electronics (TEE) program under grant No. DP18AP900007, the U.S. Office of Naval Research (ONR) through Grants No. N000142112450 and MURI No. N000142212764. B.P and A.M.A. acknowledge support from ONR Grant No. N000141712793.
VIII Author contributions
W. M. S. grew the material heterostructure. N. L. and P. Y. fabricated the devices. N. L., W. F. S., and B.H.E performed the measurements. N. L. and W. F. S. performed the analysis. B. P. and A. M. performed the analytical calculations and numerical simulations. N. L., W. F. S., A. M., and B. P. wrote the manuscript. J. S. conceived the experiment.
IX Competing interests
The authors declare no competing interests.