Condensed Matter > Materials Science
[Submitted on 25 Sep 2005]
Title:Tight-binding model of spin-polarized tunnelling in (Ga,Mn)As-based structures
View PDFAbstract: The Landauer-Buettiker formalism combined with the tight-binding transfer matrix method is used to describe the results of recent experiments: the high tunneling magnetoresistance (TMR) in (Ga,Mn)As-based trilayers and highly polarized spin injection in p-(Ga,Mn)As/n-GaAs Zener diode. For both TMR and Zener spin current polarization, the calculated values agree well with those observed experimentally. The role played in the spin dependent tunneling by carrier concentration and magnetic ion content is also studied.
References & Citations
Bibliographic and Citation Tools
Bibliographic Explorer (What is the Explorer?)
Litmaps (What is Litmaps?)
scite Smart Citations (What are Smart Citations?)
Code, Data and Media Associated with this Article
CatalyzeX Code Finder for Papers (What is CatalyzeX?)
DagsHub (What is DagsHub?)
Gotit.pub (What is GotitPub?)
Papers with Code (What is Papers with Code?)
ScienceCast (What is ScienceCast?)
Demos
Recommenders and Search Tools
Influence Flower (What are Influence Flowers?)
Connected Papers (What is Connected Papers?)
CORE Recommender (What is CORE?)
IArxiv Recommender
(What is IArxiv?)
arXivLabs: experimental projects with community collaborators
arXivLabs is a framework that allows collaborators to develop and share new arXiv features directly on our website.
Both individuals and organizations that work with arXivLabs have embraced and accepted our values of openness, community, excellence, and user data privacy. arXiv is committed to these values and only works with partners that adhere to them.
Have an idea for a project that will add value for arXiv's community? Learn more about arXivLabs.