Condensed Matter > Mesoscale and Nanoscale Physics
[Submitted on 29 Nov 2022 (v1), last revised 2 Feb 2023 (this version, v2)]
Title:Strong gate-tunability of flat bands in bilayer graphene due to moiré encapsulation between hBN monolayers
View PDFAbstract:When using hexagonal boron-nitride (hBN) as a substrate for graphene, the resulting moiré pattern creates secondary Dirac points. By encapsulating a multilayer graphene within aligned hBN sheets the controlled moiré stacking may offer even richer benefits. Using advanced tight-binding simulations on atomistically-relaxed heterostructures, here we show that the gap at the secondary Dirac point can be opened in selected moiré-stacking configurations, and is independent of any additional vertical gating of the heterostructure. On the other hand, gating can broadly tune the gap at the principal Dirac point, and may thereby strongly compress the first moiré mini-band in width against the moiré-induced gap at the secondary Dirac point. We reveal that in hBN-encapsulated bilayer graphene this novel mechanism can lead to isolated bands flatter than 10~meV under moderate gating, hence presenting a convenient pathway towards electronically-controlled strongly-correlated states on demand.
Submission history
From: Robin Smeyers [view email][v1] Tue, 29 Nov 2022 16:33:08 UTC (38,657 KB)
[v2] Thu, 2 Feb 2023 17:04:40 UTC (29,707 KB)
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