Condensed Matter > Disordered Systems and Neural Networks
[Submitted on 9 Feb 2017 (v1), last revised 25 Aug 2017 (this version, v2)]
Title:Disorder induced transitions in resonantly driven Floquet Topological Insulators
View PDFAbstract:We investigate the effects of disorder in Floquet topological insulators (FTIs) occurring in semiconductor quantum wells. Such FTIs are induced by resonantly driving a transition between the valence and conduction band. We show that when disorder is added, the topological nature of such FTIs persists as long as there is a mobility gap at the resonant quasi-energy. For strong enough disorder, this gap closes and all the states become localized as the system undergoes a transition to a trivial insulator. Interestingly, the effects of disorder are not necessarily adverse: we show that in the same quantum well, disorder can also induce a transition from a trivial to a topological system, thereby establishing a Floquet Topological Anderson Insulator (FTAI). We identify the conditions on the driving field necessary for observing such a transition.
Submission history
From: Paraj Titum [view email][v1] Thu, 9 Feb 2017 19:18:05 UTC (2,199 KB)
[v2] Fri, 25 Aug 2017 15:23:31 UTC (2,200 KB)
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