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Cryogenic optical beam steering for superconducting device calibration
Authors:
K. Stifter,
H. Magoon,
A. J. Anderson,
D. J. Temples,
N. A. Kurinsky,
C. Stoughton,
I. Hernandez,
A. Nuñez,
K. Anyang,
R. Linehan,
M. R. Young,
P. Barry,
D. Baxter,
D. Bowring,
G. Cancelo,
A. Chou,
K. R. Dibert,
E. Figueroa-Feliciano,
L. Hsu,
R. Khatiwada,
S. D. Mork,
L. Stefanazzi,
N. Tabassum,
S. Uemura,
B. A. Young
Abstract:
We have developed a calibration system based on a micro-electromechanical systems (MEMS) mirror that is capable of delivering an optical beam over a wavelength range of 180 -- 2000 nm (0.62 -- 6.89 eV) in a sub-Kelvin environment. This portable, integrated system can steer the beam over a $\sim$3 cm $\times$ 3 cm area on the surface of any sensor with a precision of $\sim$100 $μ$m, enabling charac…
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We have developed a calibration system based on a micro-electromechanical systems (MEMS) mirror that is capable of delivering an optical beam over a wavelength range of 180 -- 2000 nm (0.62 -- 6.89 eV) in a sub-Kelvin environment. This portable, integrated system can steer the beam over a $\sim$3 cm $\times$ 3 cm area on the surface of any sensor with a precision of $\sim$100 $μ$m, enabling characterization of device response as a function of position. This fills a critical need in the landscape of calibration tools for sub-Kelvin devices, including those used for dark matter detection and quantum computing. These communities have a shared goal of understanding the impact of ionizing radiation on device performance, which can be pursued with our system. This paper describes the design of the first-generation calibration system and the results from successfully testing its performance at room temperature and 20 mK.
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Submitted 3 May, 2024;
originally announced May 2024.
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Quantum Block-Matching Algorithm using Dissimilarity Measure
Authors:
M. Martínez-Felipe,
J. Montiel-Pérez,
V. Onofre,
A. Maldonado-Romo,
Ricky Young
Abstract:
Finding groups of similar image blocks within an ample search area is often necessary in different applications, such as video compression, image clustering, vector quantization, and nonlocal noise reduction. A block-matching algorithm that uses a dissimilarity measure can be applied in such scenarios. In this work, a measure that utilizes the quantum Fourier transform or the Swap test based on th…
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Finding groups of similar image blocks within an ample search area is often necessary in different applications, such as video compression, image clustering, vector quantization, and nonlocal noise reduction. A block-matching algorithm that uses a dissimilarity measure can be applied in such scenarios. In this work, a measure that utilizes the quantum Fourier transform or the Swap test based on the Euclidean distance is proposed. Experiments on small cases with ideal and noisy simulations are implemented. In the case of the Swap test, the IBM and IonQ quantum devices have been used, demonstrating potential for future near-term applications.
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Submitted 28 December, 2023; v1 submitted 27 September, 2023;
originally announced September 2023.
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Signing Information in the Quantum Era
Authors:
K. Longmate,
E. M. Ball,
E. Dable-Heath,
R. J. Young
Abstract:
Signatures are primarily used as a mark of authenticity, to demonstrate that the sender of a message is who they claim to be. In the current digital age, signatures underpin trust in the vast majority of information that we exchange, particularly on public networks such as the internet. However, schemes for signing digital information which are based on assumptions of computational complexity are…
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Signatures are primarily used as a mark of authenticity, to demonstrate that the sender of a message is who they claim to be. In the current digital age, signatures underpin trust in the vast majority of information that we exchange, particularly on public networks such as the internet. However, schemes for signing digital information which are based on assumptions of computational complexity are facing challenges from advances in mathematics, the capability of computers, and the advent of the quantum era. Here we present a review of digital signature schemes, looking at their origins and where they are under threat. Next, we introduce post-quantum digital schemes, which are being developed with the specific intent of mitigating against threats from quantum algorithms whilst still relying on digital processes and infrastructure. Finally, we review schemes for signing information carried on quantum channels, which promise provable security metrics. Signatures were invented as a practical means of authenticating communications and it is important that the practicality of novel signature schemes is considered carefully, which is kept as a common theme of interest throughout this review.
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Submitted 25 September, 2020;
originally announced September 2020.
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Combined metallic nano-rings and solid-immersion lenses for bright emission from single InAs/GaAs quantum dots
Authors:
Oliver Joe Trojak,
Christopher Woodhead,
Suk-In Park,
** Dong Song,
Robert James Young,
Luca Sapienza
Abstract:
Solid-state single-photon emitters are key components for integrated quantum photonic devices. However, they can suffer from poor extraction efficiencies, caused by the large refractive index contrast between the bulk material they are embedded in and air: this results in a small fraction (that can be as low as <1%) of the emitted photons reaching free-space collection optics. To overcome this iss…
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Solid-state single-photon emitters are key components for integrated quantum photonic devices. However, they can suffer from poor extraction efficiencies, caused by the large refractive index contrast between the bulk material they are embedded in and air: this results in a small fraction (that can be as low as <1%) of the emitted photons reaching free-space collection optics. To overcome this issue, we present a device that combines a metallic nano-ring, positioned on the sample surface and centered around the emitter, and an epoxy-based super-solid immersion lens, deterministically deposited above the ring devices. We show that the combined broadband lensing effect of the nano-ring and of the super-solid immersion lens significantly increases the extraction of light emitted by single InAs/GaAs quantum dots into free space: we observe enhancements in the emitted intensity by the nano-ring of up to a factor 20 and by the super-solid immersion lens of up to a factor 10. Such cumulative enhancements allow us to measure photon fluxes approaching 1 million counts per second, from a single InAs/GaAs quantum dot in bulk. The combined broad-band enhancement in the extraction of light can be implemented with any kind of classical and quantum solid-state emitter and opens the path to the realisation of scalable bright devices. The same approach can also be implemented to improve the absorption of light, for instance for small-area broadband photo-detectors.
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Submitted 22 January, 2018;
originally announced January 2018.
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Extracting random numbers from quantum tunnelling through a single diode
Authors:
Ramón Bernardo-Gavito,
Ibrahim Ethem Bagci,
Jonathan Roberts,
James Sexton,
Benjamin Astbury,
Hamzah Shokeir,
Thomas McGrath,
Yasir J. Noori,
Christopher S. Woodhead,
Mohamed Missous,
Utz Roedig,
Robert J. Young
Abstract:
Random number generation is crucial in many aspects of everyday life, as online security and privacy depend ultimately on the quality of random numbers. Many current implementations are based on pseudo-random number generators, but information security requires true random numbers for sensitive applications like key generation in banking, defence or even social media. True random number generators…
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Random number generation is crucial in many aspects of everyday life, as online security and privacy depend ultimately on the quality of random numbers. Many current implementations are based on pseudo-random number generators, but information security requires true random numbers for sensitive applications like key generation in banking, defence or even social media. True random number generators are systems whose outputs cannot be determined, even if their internal structure and response history are known. Sources of quantum noise are thus ideal for this application due to their intrinsic uncertainty. In this work, we propose using resonant tunnelling diodes as practical true random number generators based on a quantum mechanical effect. The output of the proposed devices can be directly used as a random stream of bits or can be further distilled using randomness extraction algorithms, depending on the application.
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Submitted 22 June, 2017;
originally announced June 2017.
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Light extraction from 2D materials using liquid formed micro-lenses
Authors:
Christopher S. Woodhead,
Jonathan Roberts,
Yasir J. Noori,
Yameng Cao,
Ramón Bernardo-Gavito,
Peter Tovee,
Aleksey Kozikov,
Konstantin Novoselov,
Robert J. Young
Abstract:
The recent discovery of semiconducting two-dimensional materials has led to the prediction of a revolution in the field of optoelectronics, driven by the introduction of a series of new components that are just a few atoms thick. Key remaining challenges for producing practical devices from these materials lie in improving the coupling of light into and out of single atomic layers, and in making t…
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The recent discovery of semiconducting two-dimensional materials has led to the prediction of a revolution in the field of optoelectronics, driven by the introduction of a series of new components that are just a few atoms thick. Key remaining challenges for producing practical devices from these materials lie in improving the coupling of light into and out of single atomic layers, and in making these layers robust to the influence of their surrounding environment. We present a solution to tackle both of these problems simultaneously, by deterministically placing a micro-lens directly onto the surface of these materials. These lenses are dynamically tuned to increase the coupling of light, whilst controlling chromatic aberration, before being set in place with UV light. We show that this approach enhances photoluminescence of tungsten diselenide (WSe2) monolayers by up to 300%, and nearly doubles the imaging resolution of the system. Furthermore, this solution fully encapsulates the monolayer, preventing it from physical damage and degradation in air. The optical solution we have developed could become a key enabling technology for the mass production of ultra-thin optical devices, such as quantum light emitting diodes.
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Submitted 18 July, 2016;
originally announced July 2016.
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Photonic crystals to enhance light extraction from 2D materials
Authors:
Yasir J. Noori,
Yameng Cao,
Jonathan Roberts,
Christopher Woodhead,
Ramon Bernardo-Gavito,
Peter Tovee,
Robert J. Young
Abstract:
We propose a scheme for coupling 2D materials to an engineered cavity based on a defective rod type photonic crystal lattice. We show results from numerical modelling of the suggested cavity design, and propose using the height profile of a 2D material transferred on top of the cavity to maximise coupling between exciton recombination and the cavity mode. The photonic structure plays a key role in…
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We propose a scheme for coupling 2D materials to an engineered cavity based on a defective rod type photonic crystal lattice. We show results from numerical modelling of the suggested cavity design, and propose using the height profile of a 2D material transferred on top of the cavity to maximise coupling between exciton recombination and the cavity mode. The photonic structure plays a key role in enhancing the launch efficiency, by improving the directionality of the emitted light to better couple it into an external optical system. When using the photonic structure, we measured an increase in the extraction ratio by a factor of 3.4. We investigated the variations in the flux spectrum when the radius of the rods is modified, and when the 2D material droops to a range of different heights within the cavity. We found an optimum enhancement when the rods have a radius equal to 0.165 times the lattice constant, this enhancement reduces when the radius is reduced or increased. Finally, we discuss the possible use of solid immersion lenses, in combination with our photonic structure, to further enhance the launch efficiency and to improve vertical confinement of the cavity mode.
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Submitted 18 July, 2016;
originally announced July 2016.
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Using Quantum Confinement to Uniquely Identify Devices
Authors:
J. Roberts,
I. E. Bagci,
M. A. M. Zawawi,
J. Sexton,
N. Hulbert,
Y. J. Noori,
M. P. Young,
C. S. Woodhead,
M. Missous,
M. A. Migliorato,
U. Roedig,
R. J. Young
Abstract:
Modern technology unintentionally provides resources that enable the trust of everyday interactions to be undermined. Some authentication schemes address this issue using devices that give unique outputs in response to a challenge. These signatures are generated by hard-to-predict physical responses derived from structural characteristics, which lend themselves to two different architectures, know…
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Modern technology unintentionally provides resources that enable the trust of everyday interactions to be undermined. Some authentication schemes address this issue using devices that give unique outputs in response to a challenge. These signatures are generated by hard-to-predict physical responses derived from structural characteristics, which lend themselves to two different architectures, known as unique objects (UNOs) and physically unclonable functions (PUFs). The classical design of UNOs and PUFs limits their size and, in some cases, their security. Here we show that quantum confinement lends itself to the provision of unique identities at the nanoscale, by using fluctuations in tunnelling measurements through quantum wells in resonant tunnelling diodes (RTDs). This provides an uncomplicated measurement of identity without conventional resource limitations whilst providing robust security. The confined energy levels are highly sensitive to the specific nanostructure within each RTD, resulting in a distinct tunnelling spectrum for every device, as they contain a unique and unpredictable structure that is presently impossible to clone. This new class of authentication device operates with few resources in simple electronic structures above room temperature.
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Submitted 7 January, 2016; v1 submitted 23 February, 2015;
originally announced February 2015.
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Efficient self-consistent quantum transport simulator for quantum devices
Authors:
Xujiao Gao,
Denis Mamaluy,
Erik Nielsen,
Ralph W. Young,
Amir Shirkhorshidian,
Michael P. Lilly,
Nathan C. Bishop,
Malcolm S. Carroll,
Richard P. Muller
Abstract:
We present a self-consistent one-dimensional (1D) quantum transport simulator based on the Contact Block Reduction (CBR) method, aiming for very fast and robust transport simulation of 1D quantum devices. Applying the general CBR approach to 1D open systems results in a set of very simple equations that are derived and given in detail for the first time. The charge self-consistency of the coupled…
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We present a self-consistent one-dimensional (1D) quantum transport simulator based on the Contact Block Reduction (CBR) method, aiming for very fast and robust transport simulation of 1D quantum devices. Applying the general CBR approach to 1D open systems results in a set of very simple equations that are derived and given in detail for the first time. The charge self-consistency of the coupled CBR-Poisson equations is achieved by using the predictor-corrector iteration scheme with the optional Anderson acceleration. In addition, we introduce a new way to convert an equilibrium electrostatic barrier potential calculated from an external simulator to an effective do** profile, which is then used by the CBR-Poisson code for transport simulation of the barrier under non-zero biases. The code has been applied to simulate the quantum transport in a double barrier structure and across a tunnel barrier in a silicon double quantum dot. Extremely fast self-consistent 1D simulations of the differential conductance across a tunnel barrier in the quantum dot show better qualitative agreement with experiment than non-self-consistent simulations.
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Submitted 28 March, 2014;
originally announced March 2014.
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QCAD Simulation and Optimization of Semiconductor Quantum Dots
Authors:
Xujiao Gao,
Erik Nielsen,
Richard P. Muller,
Ralph W. Young,
Andrew G. Salinger,
Nathan C. Bishop,
Michael P. Lilly,
Malcolm S. Carroll
Abstract:
We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling multi-dimensional quantum devices, particularly silicon multi-quantum dots (QDs) developed for quantum bits (qubits). This finite-element simulator has three differentiating features: (i) its core contains nonlinear Poisson, effective mass Schrodinger, and Configuration Interaction solvers that have massively paral…
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We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling multi-dimensional quantum devices, particularly silicon multi-quantum dots (QDs) developed for quantum bits (qubits). This finite-element simulator has three differentiating features: (i) its core contains nonlinear Poisson, effective mass Schrodinger, and Configuration Interaction solvers that have massively parallel capability for high simulation throughput, and can be run individually or combined self-consistently for 1D/2D/3D quantum devices; (ii) the core solvers show superior convergence even at near-zero-Kelvin temperatures, which is critical for modeling quantum computing devices; and (iii) it interfaces directly with the full-featured optimization engine Dakota. In this work, we describe the capabilities and implementation of the QCAD simulation tool, and show how it can be used to both analyze existing experimental QD devices through capacitance calculations, and aid in the design of few-electron multi-QDs. In particular, we observe that computed capacitances are in rough agreement with experiment, and that quantum confinement increases capacitance when the number of electrons is fixed in a quantum dot. Coupling of QCAD with the optimizer Dakota allows for rapid identification and improvement of device layouts that are likely to exhibit few-electron quantum dot characteristics.
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Submitted 28 March, 2014;
originally announced March 2014.
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Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells
Authors:
Robert J. Young,
Lorenzo O. Mereni,
Nikolay Petkov,
Gabrielle R. Knight,
Valeria Dimastrodonato,
Paul K. Hurley,
Greg Hughes,
Emanuele Pelucchi
Abstract:
We investigate the dependence of the low-temperature photoluminescence linewidths from InP-lattice-matched InGaAs/InAlAs quantum wells on the low-angle misorientation from the (100) surface of the host InP substrate. Quantum wells were grown on InP substrates misorientated by 0, 0.2, 0.4 and 0.6 degrees; 0.4 degrees was found to consistently result in the narrowest peaks, with the optimal spectral…
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We investigate the dependence of the low-temperature photoluminescence linewidths from InP-lattice-matched InGaAs/InAlAs quantum wells on the low-angle misorientation from the (100) surface of the host InP substrate. Quantum wells were grown on InP substrates misorientated by 0, 0.2, 0.4 and 0.6 degrees; 0.4 degrees was found to consistently result in the narrowest peaks, with the optimal spectral purity of ~4.25 meV found from a 15nm quantum well. The width of the emission from the 15nm quantum well was used to optimize the growth parameters. Thick layers of Si-doped InGaAs were then grown and found to have bulk, low temperature (77 K), electron mobilities up to μ~ 3.5 x 10^4 cm2/Vs with an electron concentration of ~1 x 10^16.
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Submitted 8 April, 2010;
originally announced April 2010.
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Quantum Memories. A Review based on the European Integrated Project "Qubit Applications (QAP)"
Authors:
C. Simon,
M. Afzelius,
J. Appel,
A. Boyer de la Giroday,
S. J. Dewhurst,
N. Gisin,
C. Y. Hu,
F. Jelezko,
S. Kroll,
J. H. Muller,
J. Nunn,
E. Polzik,
J. Rarity,
H. de Riedmatten,
W. Rosenfeld,
A. J. Shields,
N. Skold,
R. M. Stevenson,
R. Thew,
I. Walmsley,
M. Weber,
H. Weinfurter,
J. Wrachtrup,
R. J. Young
Abstract:
We perform a review of various approaches to the implementation of quantum memories, with an emphasis on activities within the quantum memory sub-project of the EU Integrated Project "Qubit Applications". We begin with a brief overview over different applications for quantum memories and different types of quantum memories. We discuss the most important criteria for assessing quantum memory perf…
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We perform a review of various approaches to the implementation of quantum memories, with an emphasis on activities within the quantum memory sub-project of the EU Integrated Project "Qubit Applications". We begin with a brief overview over different applications for quantum memories and different types of quantum memories. We discuss the most important criteria for assessing quantum memory performance and the most important physical requirements. Then we review the different approaches represented in "Qubit Applications" in some detail. They include solid-state atomic ensembles, NV centers, quantum dots, single atoms, atomic gases and optical phonons in diamond. We compare the different approaches using the discussed criteria.
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Submitted 4 March, 2010;
originally announced March 2010.
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Capacitance modeling of complex topographical silicon quantum dot structures
Authors:
H. L. Stalford,
R. Young,
E. P. Nordberg,
James. E. Levy,
Carlos Borras Pinilla,
M. S. Carroll
Abstract:
Quantum dot (QD) lay-outs are becoming more complex as the technology is being applied to more complex multi-QD structures. This increase in complexity requires improved capacitance modeling both for design and accurate interpretation of QD properties from measurement. A combination of process simulation, electrostatic simulation, and computer assisted design (CAD) lay-out packages are used to d…
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Quantum dot (QD) lay-outs are becoming more complex as the technology is being applied to more complex multi-QD structures. This increase in complexity requires improved capacitance modeling both for design and accurate interpretation of QD properties from measurement. A combination of process simulation, electrostatic simulation, and computer assisted design (CAD) lay-out packages are used to develop a three dimensional (3D) classical capacitance model. The agreement of the capacitances of the classical model is tested against two different, experimentally measured, topographically complex silicon QD geometries. Agreement with experiment, within 10-20%, is demonstrated for the two structures when the details of the structure are transferred from the CAD to the model capturing the full 3D topography. Small uncertainty in device dimensions due to uncontrolled variation in processing, like layer thickness and gate size, are calculated to be sufficient to explain the disagreement. The sensitivity of the capacitances to small variations in the structure also highlights the limits of accuracy of capacitance models for QD analysis. We furthermore observe that a critical density, the metal insulator transition, can be used as a good approximation of the metallic edge of the quantum dot when electron density in the dot is calculated directly with a semi-classical simulation.
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Submitted 18 November, 2009;
originally announced November 2009.
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Implications of Simultaneous Requirements for Low Noise Exchange Gates in Double Quantum Dots
Authors:
Erik Nielsen,
Ralph W. Young,
Richard P. Muller,
M. S. Carroll
Abstract:
Achieving low-error, exchange-interaction operations in quantum dots for quantum computing imposes simultaneous requirements on the exchange energy's dependence on applied voltages. A double quantum dot (DQD) qubit, approximated with a quadratic potential, is solved using a full configuration interaction method. This method is more accurate than Heitler-London and Hund-Mulliken approaches and ca…
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Achieving low-error, exchange-interaction operations in quantum dots for quantum computing imposes simultaneous requirements on the exchange energy's dependence on applied voltages. A double quantum dot (DQD) qubit, approximated with a quadratic potential, is solved using a full configuration interaction method. This method is more accurate than Heitler-London and Hund-Mulliken approaches and captures new and significant qualitative behavior. We show that multiple regimes can be found in which the exchange energy's dependence on the bias voltage between the dots is compatible with current quantum error correction codes and state-of-the-art electronics. Identifying such regimes may prove valuable for the construction and operation of quantum gates that are robust to charge fluctuations, particularly in the case of dynamically corrected gates.
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Submitted 8 April, 2010; v1 submitted 31 August, 2009;
originally announced September 2009.
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Bell-inequality violation with a triggered photon-pair source
Authors:
R. J. Young,
R. M. Stevenson,
A. J. Hudson,
C. A. Nicoll,
D. A. Ritchie,
A. J. Shields
Abstract:
Here we demonstrate, for the first time, violation of Bell's inequality using a triggered quantum dot photon-pair source without post-selection. Furthermore, the fidelity to the expected Bell state can be increased above 90% using temporal gating to reject photons emitted at times when collection of uncorrelated light is more probable. A direct measurement of a CHSH Bell inequality is made showi…
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Here we demonstrate, for the first time, violation of Bell's inequality using a triggered quantum dot photon-pair source without post-selection. Furthermore, the fidelity to the expected Bell state can be increased above 90% using temporal gating to reject photons emitted at times when collection of uncorrelated light is more probable. A direct measurement of a CHSH Bell inequality is made showing a clear violation, highlighting that a quantum dot entangled photon source is suitable for communication exploiting non-local quantum correlations.
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Submitted 4 April, 2008;
originally announced April 2008.
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Evolution of entanglement within classical light states
Authors:
R. Mark Stevenson,
Andrew J. Hudson,
Anthony J. Bennett,
Robert J. Young,
Christine A. Nicoll,
David A. Ritchie,
Andrew J. Shields
Abstract:
We investigate the evolution of quantum correlations over the lifetime of a multi-photon state. Measurements reveal time-dependent oscillations of the entanglement fidelity for photon pairs created by a single semiconductor quantum dot. The oscillations are attributed to the phase acquired in the intermediate, non-degenerate, exciton-photon state and are consistent with simulations. We conclude…
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We investigate the evolution of quantum correlations over the lifetime of a multi-photon state. Measurements reveal time-dependent oscillations of the entanglement fidelity for photon pairs created by a single semiconductor quantum dot. The oscillations are attributed to the phase acquired in the intermediate, non-degenerate, exciton-photon state and are consistent with simulations. We conclude that emission of photon pairs by a typical quantum dot with finite polarisation splitting is in fact entangled in a time-evolving state, and not classically correlated as previously regarded.
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Submitted 27 March, 2008;
originally announced March 2008.
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Biphoton interference with a quantum dot entangled light source
Authors:
R. M. Stevenson,
A. J. Hudson,
R. J. Young,
P. Atkinson,
K. Cooper,
D. A. Ritchie,
A. J. Shields
Abstract:
We demonstrate optical interferometry beyond the limits imposed by the photon wavelength using 'triggered' entangled photon pairs from a semiconductor quantum dot. Interference fringes of the entangled biphoton state reveals a periodicity half of that obtained with the single photon, and much less than that of the pump laser. High fringe visibility indicates that biphoton interference is less se…
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We demonstrate optical interferometry beyond the limits imposed by the photon wavelength using 'triggered' entangled photon pairs from a semiconductor quantum dot. Interference fringes of the entangled biphoton state reveals a periodicity half of that obtained with the single photon, and much less than that of the pump laser. High fringe visibility indicates that biphoton interference is less sensitive to decoherence than interference of two sequential single photons. The results suggest that quantum interferometry may be possible using a semiconductor LED-like device.
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Submitted 27 March, 2008;
originally announced March 2008.
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Coherence of an Entangled Exciton-Photon State
Authors:
A. J. Hudson,
R. M. Stevenson,
A. J. Bennett,
R. J. Young,
C. A. Nicoll,
P. Atkinson,
K. Cooper,
D. A. Ritchie,
A. J. Shields
Abstract:
We study the effect of the exciton fine-structure splitting on the polarisation-entanglement of photon pairs produced by the biexciton cascade in a single quantum dot. The entanglement is found to persist despite separations between the intermediate energy levels of up to 4 micro-eV. Measurements demonstrate that entanglement of the photon pair is robust to the dephasing of the intermediate exci…
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We study the effect of the exciton fine-structure splitting on the polarisation-entanglement of photon pairs produced by the biexciton cascade in a single quantum dot. The entanglement is found to persist despite separations between the intermediate energy levels of up to 4 micro-eV. Measurements demonstrate that entanglement of the photon pair is robust to the dephasing of the intermediate exciton state responsible for the first order coherence time of either single photon. We present a theoretical framework taking into account the effects of spin-scattering, background light and dephasing. We distinguish between the first-order coherence time, and a parameter which we measure for the first time and define as the cross-coherence time.
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Submitted 4 October, 2007; v1 submitted 24 July, 2007;
originally announced July 2007.
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Single electron-spin memory with a semiconductor quantum dot
Authors:
Robert J. Young,
Samuel J. Dewhurst,
R. Mark Stevenson,
Paola Atkinson,
Anthony J. Bennett,
Martin B. Ward,
Ken Cooper,
David A. Ritchie,
Andrew J. Shields
Abstract:
We show storage of the circular polarisation of an optical field, transferring it to the spin-state of an individual electron confined in a single semiconductor quantum dot. The state is subsequently readout through the electronically-triggered emission of a single photon. The emitted photon shares the same polarisation as the initial pulse but has a different energy, making the transfer of quan…
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We show storage of the circular polarisation of an optical field, transferring it to the spin-state of an individual electron confined in a single semiconductor quantum dot. The state is subsequently readout through the electronically-triggered emission of a single photon. The emitted photon shares the same polarisation as the initial pulse but has a different energy, making the transfer of quantum information between different physical systems possible. With an applied magnetic field of 2 Tesla, spin memory is preserved for at least 1000 times more than the exciton's radiative lifetime.
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Submitted 14 June, 2007;
originally announced June 2007.
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Controlling the polarisation correlation of photon pairs from a charge-tuneable quantum dot
Authors:
R. J. Young,
S. J. Dewhurst,
R. M. Stevenson,
A. J. Shields,
P. Atkinson,
K. Cooper,
D. A. Ritchie
Abstract:
Correlation between the rectilinear polarisations of the photons emitted from the biexciton decay in a single quantum dot is investigated in a device which allows the charge-state of the dot to be controlled. Optimising emission from the neutral exciton states maximises the operating efficiency of the biexciton decay. This is important for single dot applications such as a triggered source of en…
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Correlation between the rectilinear polarisations of the photons emitted from the biexciton decay in a single quantum dot is investigated in a device which allows the charge-state of the dot to be controlled. Optimising emission from the neutral exciton states maximises the operating efficiency of the biexciton decay. This is important for single dot applications such as a triggered source of entangled photons. As the bias on the device is reduced correlation between the two photons is found to fall dramatically as emission from the negatively charged exciton becomes significant. Lifetime measurements demonstrate that electronic spin-scattering is the likely cause.
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Submitted 6 June, 2007;
originally announced June 2007.
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Control of fine-structure splitting of individual InAs quantum dots by rapid thermal annealing
Authors:
D. J. P. Ellis,
R. M. Stevenson,
R. J. Young,
P. Atkinson,
D. A. Ritchie,
A. J. Shields
Abstract:
Degeneracy of the bright single exciton spin state is a prerequisite for the production of triggered polarization-entangled photon pairs from the biexciton decay of a quantum dot. Normally, however, the exciton spin states are split due to in-plane asymmetries. Here we demonstrate that the exciton splitting of an individual dot can be tuned through zero by thermal annealing. Repeated annealing b…
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Degeneracy of the bright single exciton spin state is a prerequisite for the production of triggered polarization-entangled photon pairs from the biexciton decay of a quantum dot. Normally, however, the exciton spin states are split due to in-plane asymmetries. Here we demonstrate that the exciton splitting of an individual dot can be tuned through zero by thermal annealing. Repeated annealing blueshifts the exciton emission line of the dot, accompanied by a reduction and inversion in polarization splitting. Annealing is also demonstrated to control the detuning between the exciton and biexciton transitions in any selected dot.
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Submitted 6 December, 2006;
originally announced December 2006.
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Magnetic-field-induced reduction of the exciton polarization splitting in InAs quantum dots
Authors:
R. M. Stevenson,
R. J. Young,
P. See,
D. G. Gevaux,
K. Cooper,
P. Atkinson,
I. Farrer,
D. A. Ritchie,
A. J. Shields
Abstract:
By the application of an in-plane magnetic field, we demonstrate control of the fine structure polarisation splitting of the exciton emission lines in individual InAs quantum dots. The selection of quantum dots with certain barrier composition and confinement energies is found to determine the magnetic field dependent increase or decrease of the separation of the bright exciton emission lines, a…
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By the application of an in-plane magnetic field, we demonstrate control of the fine structure polarisation splitting of the exciton emission lines in individual InAs quantum dots. The selection of quantum dots with certain barrier composition and confinement energies is found to determine the magnetic field dependent increase or decrease of the separation of the bright exciton emission lines, and has enabled the splitting to be tuned to zero within the resolution of our experiments. Observed behaviour allows us to determine g-factors and exchange splittings for different types of dots.
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Submitted 30 January, 2006;
originally announced January 2006.
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Inversion of exciton level splitting in quantum dots
Authors:
R. J. Young,
R. M. Stevenson,
A. J. Shields,
P. Atkinson,
K. Cooper,
D. A. Ritchie,
K. M. Groom,
A. I. Tartakovskii,
M. S. Skolnick
Abstract:
The demonstration of degeneracy of the exciton spin states is an important step towards the production of entangled photons pairs from the biexciton cascade. We measure the fine structure of exciton and biexciton states for a large number of single InAs quantum dots in a GaAs matrix; the energetic splitting of the horizontally and vertically polarised components of the exciton doublet is shown t…
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The demonstration of degeneracy of the exciton spin states is an important step towards the production of entangled photons pairs from the biexciton cascade. We measure the fine structure of exciton and biexciton states for a large number of single InAs quantum dots in a GaAs matrix; the energetic splitting of the horizontally and vertically polarised components of the exciton doublet is shown to decrease as the exciton confinement decreases, crucially passing through zero and changing sign. Thermal annealing is shown to reduce the exciton confinement, thereby increasing the number of dots with splitting close to zero.
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Submitted 30 January, 2006;
originally announced January 2006.
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Improved fidelity of triggered entangled photons from single quantum dots
Authors:
Robert J. Young,
R. Mark Stevenson,
Paola Atkinson,
Ken Cooper,
David A. Ritchie,
Andrew J. Shields
Abstract:
We demonstrate the on-demand emission of polarisation-entangled photon pairs from the biexciton cascade of a single InAs quantum dot embedded in a GaAs/AlAs planar microcavity. Improvements in the sample design blue shifts the wetting layer to reduce the contribution of background light in the measurements. Results presented show that >70% of the detected photon pairs are entangled. The high fid…
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We demonstrate the on-demand emission of polarisation-entangled photon pairs from the biexciton cascade of a single InAs quantum dot embedded in a GaAs/AlAs planar microcavity. Improvements in the sample design blue shifts the wetting layer to reduce the contribution of background light in the measurements. Results presented show that >70% of the detected photon pairs are entangled. The high fidelity of the (|HxxHx>+|VxxVx>)/2^0.5 state that we determine is sufficient to satisfy numerous tests for entanglement. The improved quality of entanglement represents a significant step towards the realisation of a practical quantum dot source compatible with applications in quantum information.
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Submitted 26 February, 2006; v1 submitted 27 January, 2006;
originally announced January 2006.
