Individually Addressed Entangling Gates in a Two-Dimensional Ion Crystal
Authors:
Y. -H. Hou,
Y. -J. Yi,
Y. -K. Wu,
Y. -Y. Chen,
L. Zhang,
Y. Wang,
Y. -L. Xu,
C. Zhang,
Q. -X. Mei,
H. -X. Yang,
J. -Y. Ma,
S. -A. Guo,
J. Ye,
B. -X. Qi,
Z. -C. Zhou,
P. -Y. Hou,
L. -M. Duan
Abstract:
Two-dimensional (2D) ion crystals have become a promising way to scale up qubit numbers for ion trap quantum information processing. However, to realize universal quantum computing in this system, individually addressed high-fidelity two-qubit entangling gates still remain challenging due to the inevitable micromotion of ions in a 2D crystal as well as the technical difficulty in 2D addressing. He…
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Two-dimensional (2D) ion crystals have become a promising way to scale up qubit numbers for ion trap quantum information processing. However, to realize universal quantum computing in this system, individually addressed high-fidelity two-qubit entangling gates still remain challenging due to the inevitable micromotion of ions in a 2D crystal as well as the technical difficulty in 2D addressing. Here we demonstrate two-qubit entangling gates between any ion pairs in a 2D crystal of four ions. We use symmetrically placed crossed acousto-optic deflectors (AODs) to drive Raman transitions and achieve an addressing crosstalk error below 0.1%. We design and demonstrate a gate sequence by alternatingly addressing two target ions, making it compatible with any single-ion addressing techniques without crosstalk from multiple addressing beams. We further examine the gate performance versus the micromotion amplitude of the ions and show that its effect can be compensated by a recalibration of the laser intensity without degrading the gate fidelity. Our work paves the way for ion trap quantum computing with hundreds to thousands of qubits on a 2D ion crystal.
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Submitted 20 June, 2024;
originally announced June 2024.
A Site-Resolved 2D Quantum Simulator with Hundreds of Trapped Ions
Authors:
S. -A. Guo,
Y. -K. Wu,
J. Ye,
L. Zhang,
W. -Q. Lian,
R. Yao,
Y. Wang,
R. -Y. Yan,
Y. -J. Yi,
Y. -L. Xu,
B. -W. Li,
Y. -H. Hou,
Y. -Z. Xu,
W. -X. Guo,
C. Zhang,
B. -X. Qi,
Z. -C. Zhou,
L. He,
L. -M. Duan
Abstract:
A large qubit capacity and an individual readout capability are two crucial requirements for large-scale quantum computing and simulation. As one of the leading physical platforms for quantum information processing, the ion trap has achieved quantum simulation of tens of ions with site-resolved readout in 1D Paul trap, and that of hundreds of ions with global observables in 2D Penning trap. Howeve…
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A large qubit capacity and an individual readout capability are two crucial requirements for large-scale quantum computing and simulation. As one of the leading physical platforms for quantum information processing, the ion trap has achieved quantum simulation of tens of ions with site-resolved readout in 1D Paul trap, and that of hundreds of ions with global observables in 2D Penning trap. However, integrating these two features into a single system is still very challenging. Here we report the stable trap** of 512 ions in a 2D Wigner crystal and the sideband cooling of their transverse motion. We demonstrate the quantum simulation of long-range quantum Ising models with tunable coupling strengths and patterns, with or without frustration, using 300 ions. Enabled by the site resolution in the single-shot measurement, we observe rich spatial correlation patterns in the quasi-adiabatically prepared ground states, which allows us to verify quantum simulation results by comparing with the calculated collective phonon modes and with classical simulated annealing. We further probe the quench dynamics of the Ising model in a transverse field to demonstrate quantum sampling tasks. Our work paves the way for simulating classically intractable quantum dynamics and for running NISQ algorithms using 2D ion trap quantum simulators.
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Submitted 11 April, 2024; v1 submitted 28 November, 2023;
originally announced November 2023.
