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Room-Temperature entangled quantum processor on integrated semiconductor photonics platform
Authors:
Haibo Hu,
Yu Zhou,
Ailun Yi,
Tongyuan Bao,
Chengying Liu,
Qi Luo,
Yao Zhang,
Zi Wang,
Zhengtong Liu,
Shuming Xiao,
Xin Ou,
Qinghai Song
Abstract:
The rise of the 4H-silicon-carbide-on-insulator (SiCOI) platform marks a promising pathway towards the realization of monolithic quantum photonic networks. However, the challenge of establishing room-temperature entangled registers on these integrated photonics platforms remains unresolved. Herein, we demonstrate the first entangled processor on the SiCOI platform. We show that both deterministic…
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The rise of the 4H-silicon-carbide-on-insulator (SiCOI) platform marks a promising pathway towards the realization of monolithic quantum photonic networks. However, the challenge of establishing room-temperature entangled registers on these integrated photonics platforms remains unresolved. Herein, we demonstrate the first entangled processor on the SiCOI platform. We show that both deterministic generation of single divacancy electron spins and near-unity spin initialization of a single $^{13}$C nuclear spin can be achieved on SiCOI at room temperature. Besides coherently manipulating the single nuclear spin, a maximally entangled state with a fidelity of 0.89 has been prepared on this CMOS-compatible semiconductor-integrated photonics system. This work establishes the foundation for compact and on-chip solutions within existing defect-based computing and sensing protocols, positioning the SiCOI platform as the most promising candidate for integrated monolithic quantum photonic networks.
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Submitted 11 November, 2023;
originally announced November 2023.
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Hybrid integration of deterministic quantum dots-based single-photon sources with CMOS-compatible silicon carbide photonics
Authors:
Yifan Zhu,
Wenqi Wei,
Ailun Yi,
Tingting **,
Chen Shen,
Xudong Wang,
Li** Zhou,
Chengli Wang,
Weiwen Ou,
Sannian Song,
Ting Wang,
Jianjun Zhang,
Xin Ou,
Jiaxiang Zhang
Abstract:
Thin film 4H-silicon carbide (4H-SiC) is emerging as a contender for realizing large-scale optical quantum circuits due to its high CMOS technology compatibility and large optical nonlinearities. Though, challenges remain in producing wafer-scale 4H-SiC thin film on insulator (4H-SiCOI) for dense integration of photonic circuits, and in efficient coupling of deterministic quantum emitters that are…
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Thin film 4H-silicon carbide (4H-SiC) is emerging as a contender for realizing large-scale optical quantum circuits due to its high CMOS technology compatibility and large optical nonlinearities. Though, challenges remain in producing wafer-scale 4H-SiC thin film on insulator (4H-SiCOI) for dense integration of photonic circuits, and in efficient coupling of deterministic quantum emitters that are essential for scalable quantum photonics. Here we demonstrate hybrid integration of self-assembled InGaAs quantum dots (QDs) based single-photon sources (SPSs) with wafer-scale 4H-SiC photonic chips prepared by ion slicing technique. By designing a bilayer vertical coupler, we realize generation and highly efficient routing of single-photon emission in the hybrid quantum photonic chip. Furthermore, we realize a chip-integrated beamsplitter operation for triggered single photons through fabricating a 1x2 multi-mode interferometer (MMI) with a symmetric power splitting ratio of 50:50. The successful demonstration of heterogeneously integrating QDs-based SPSs on 4H-SiC photonic chip prepared by ion slicing technique constitutes an important step toward CMOS-compatible, fast reconfigurable quantum photonic circuits with deterministic SPSs.
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Submitted 23 March, 2022;
originally announced March 2022.
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Room-temperature coherent control of implanted defect spins in silicon carbide
Authors:
Fei-Fei Yan,
Ai-Lun Yi,
Jun-Feng Wang,
Qiang Li,
Pei Yu,
Jia-Xiang Zhang,
Adam Gali,
Ya Wang,
**-Shi Xu,
Xin Ou,
Chuan-Feng Li,
Guang-Can Guo
Abstract:
Recently, vacancy-related spin defects in silicon carbide (SiC) have been demonstrated to be potentially suitable for versatile quantum interface building and scalable quantum network construction. Significant efforts have been undertaken to identify spin systems in SiC and to extend their quantum capabilities using large-scale growth and advanced nanofabrication methods. Here we demonstrated a ty…
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Recently, vacancy-related spin defects in silicon carbide (SiC) have been demonstrated to be potentially suitable for versatile quantum interface building and scalable quantum network construction. Significant efforts have been undertaken to identify spin systems in SiC and to extend their quantum capabilities using large-scale growth and advanced nanofabrication methods. Here we demonstrated a type of spin defect in the 4H polytype of SiC generated via hydrogen ion implantation with high-temperature post-annealing, which is different from any known defects. These spin defects can be optically addressed and coherently controlled even at room temperature, and their fluorescence spectrum and optically detected magnetic resonance spectra are different from those of any previously discovered defects. Moreover, the generation of these defects can be well controlled by optimizing the annealing temperature after implantation. These defects demonstrate high thermal stability with coherently controlled electron spins, facilitating their application in quantum sensing and masers under harsh conditions.
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Submitted 13 April, 2020;
originally announced April 2020.
