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Estimating many properties of a quantum state via quantum reservoir processing
Authors:
Yinfei Li,
Sanjib Ghosh,
Jiangwei Shang,
Qihua Xiong,
Xiangdong Zhang
Abstract:
Estimating properties of a quantum state is an indispensable task in various applications of quantum information processing. To predict properties in the post-processing stage, it is inherent to first perceive the quantum state with a measurement protocol and store the information acquired. In this work, we propose a general framework for constructing classical approximations of arbitrary quantum…
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Estimating properties of a quantum state is an indispensable task in various applications of quantum information processing. To predict properties in the post-processing stage, it is inherent to first perceive the quantum state with a measurement protocol and store the information acquired. In this work, we propose a general framework for constructing classical approximations of arbitrary quantum states with quantum reservoirs. A key advantage of our method is that only a single local measurement setting is required for estimating arbitrary properties, while most of the previous methods need exponentially increasing number of measurement settings. To estimate $M$ properties simultaneously, the size of the classical approximation scales as $\ln M$ . Moreover, this estimation scheme is extendable to higher-dimensional systems and hybrid systems with non-identical local dimensions, which makes it exceptionally generic. We support our theoretical findings with extensive numerical simulations.
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Submitted 27 February, 2024; v1 submitted 11 May, 2023;
originally announced May 2023.
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Topological Single Photon Emission from Quantum Emitter Chains
Authors:
Yubin Wang,
Huawen Xu,
Xinyi Deng,
Timothy Liew,
Sanjib Ghosh,
Qihua Xiong
Abstract:
We develop a scheme of generating highly indistinguishable single photons from an active quantum Su-Schrieffer-Heeger chain made from a collection of noisy quantum emitters. Surprisingly, the single photon emission spectrum of the active quantum chain is extremely narrow compared to that of a single emitter or topologically trivial chain. Moreover, this effect becomes dramatically strong close to…
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We develop a scheme of generating highly indistinguishable single photons from an active quantum Su-Schrieffer-Heeger chain made from a collection of noisy quantum emitters. Surprisingly, the single photon emission spectrum of the active quantum chain is extremely narrow compared to that of a single emitter or topologically trivial chain. Moreover, this effect becomes dramatically strong close to the non-trivial-to-trivial phase transition point. Using this effect, we show that the single photon linewidth of a long topological quantum chain can become arbitrarily narrow, constituting an ideal source of indistinguishable single photons. Finally, taking specific examples of actual quantum emitters, we provide a microscopic and quantitative analysis of our model and analyze the most important parameters in view of the experimental realization.
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Submitted 31 March, 2023; v1 submitted 28 March, 2023;
originally announced March 2023.
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Layer-dependent interlayer antiferromagnetic spin reorientation in air-stable semiconductor CrSBr
Authors:
Chen Ye,
Cong Wang,
Qiong Wu,
Sheng Liu,
Jiayuan Zhou,
Guopeng Wang,
Aljoscha Soll,
Zdenek Sofer,
Ming Yue,
Xue Liu,
Mingliang Tian,
Qihua Xiong,
Wei Ji,
X. Renshaw Wang
Abstract:
Magnetic van der Waals (vdW) materials offer a fantastic platform to investigate and exploit rich spin configurations stabilized in reduced dimensions. One tantalizing magnetic order is the interlayer antiferromagnetism in A-type vdW antiferromagnet, which may be effectively modified by the magnetic field, stacking order and thickness scaling. However, atomically revealing the interlayer spin orie…
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Magnetic van der Waals (vdW) materials offer a fantastic platform to investigate and exploit rich spin configurations stabilized in reduced dimensions. One tantalizing magnetic order is the interlayer antiferromagnetism in A-type vdW antiferromagnet, which may be effectively modified by the magnetic field, stacking order and thickness scaling. However, atomically revealing the interlayer spin orientation in the vdW antiferromagnet is highly challenging, because most of the material candidates exhibit an insulating ground state or instability in ambient conditions. Here, we report the layer-dependent interlayer antiferromagnetic reorientation in air-stable semiconductor CrSBr using magnetotransport characterization and first-principles calculations. We reveal a pronounced odd-even layer effect of interlayer reorientation, which originates from the competitions among interlayer exchange, magnetic anisotropy energy and extra Zeeman energy of uncompensated magnetization. Furthermore, we quantitatively constructed the layer-dependent magnetic phase diagram with the help of a linear-chain model. Our work uncovers the layer-dependent interlayer antiferromagnetic reorientation engineered by magnetic field in the air-stable semiconductor, which could contribute to future vdW spintronic devices.
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Submitted 20 May, 2022; v1 submitted 11 May, 2022;
originally announced May 2022.
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Room-temperature bipolar valleytronic transistor in MoS2/WSe2 heterostructures
Authors:
Chongyun Jiang,
Abdullah Rasmita,
Hui Ma,
Qinghai Tan,
Zumeng Huang,
Shen Lai,
Sheng Liu,
Xue Liu,
Qihua Xiong,
Wei-bo Gao
Abstract:
Valley degree of freedom in the 2D semiconductor is a promising platform for the next generation optoelectronics. Electrons in different valleys can have opposite Berry curvature, leading to the valley Hall effect (VHE). However, VHE without the plasmonic structure's assistance has only been reported in cryogenic temperature, limiting its practical application. Here, we report the observation of V…
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Valley degree of freedom in the 2D semiconductor is a promising platform for the next generation optoelectronics. Electrons in different valleys can have opposite Berry curvature, leading to the valley Hall effect (VHE). However, VHE without the plasmonic structure's assistance has only been reported in cryogenic temperature, limiting its practical application. Here, we report the observation of VHE at room temperature in the MoS2/WSe2 heterostructures. We also uncover that both the magnitude and the polarity of the VHE in the 2D heterostructure is gate tunable. We attribute this to the opposite VHE contribution from the electron and hole in different layers. These results indicate the bipolar transport nature of our valleytronic transistor. Utilizing this gate tunability, we demonstrate a bipolar valleytronic transistor. Our results can be used to improve the ON/OFF ratio of the valleytronic transistor and to realize more versatile valleytronics logic circuits.
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Submitted 7 February, 2021;
originally announced February 2021.
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Optical spin pum** induced pseudo-magnetic field in two dimensional heterostructures
Authors:
Chongyun Jiang,
Abdullah Rasmita,
Weigao Xu,
Atac Imamoğlu,
Qihua Xiong,
Wei-bo Gao
Abstract:
Two dimensional heterostructures are likely to provide new avenues for the manipulation of magnetization that is crucial for spintronics or magnetoelectronics. Here, we demonstrate that optical spin pum** can generate a large effective magnetic field in two dimensional MoSe2/WSe2 heterostructures. We determine the strength of the generated field by polarization-resolved measurement of the interl…
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Two dimensional heterostructures are likely to provide new avenues for the manipulation of magnetization that is crucial for spintronics or magnetoelectronics. Here, we demonstrate that optical spin pum** can generate a large effective magnetic field in two dimensional MoSe2/WSe2 heterostructures. We determine the strength of the generated field by polarization-resolved measurement of the interlayer exciton photoluminescence spectrum: the measured splitting exceeding 10 milli-electron volts (meV) between the emission originating from the two valleys corresponds to an effective magnetic field of ~ 30 T. The strength of this optically induced field can be controlled by the excitation light polarization. Our finding opens up new possibilities for optically controlled spintronic devices based on van der Waals heterostructures.
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Submitted 1 April, 2018;
originally announced April 2018.
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Microsecond dark-exciton valley polarization memory in 2D heterostructures
Authors:
Chongyun Jiang,
Weigao Xu,
Abdullah Rasmita,
Zumeng Huang,
Ke Li,
Qihua Xiong,
Wei-bo Gao
Abstract:
Transition metal dichalcogenides (TMDs) have valley degree of freedom, which features optical selection rule and spin-valley locking, making them promising for valleytronics devices and quantum computation. For either application, a long valley polarization lifetime is crucial. Previous results showed that it is around picosecond in monolayer excitons, nanosecond for electrons, holes or local exci…
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Transition metal dichalcogenides (TMDs) have valley degree of freedom, which features optical selection rule and spin-valley locking, making them promising for valleytronics devices and quantum computation. For either application, a long valley polarization lifetime is crucial. Previous results showed that it is around picosecond in monolayer excitons, nanosecond for electrons, holes or local excitons and tens of nanosecond for interlayer excitons. Here we show that dark excitons in 2D heterostructures provide a microsecond valley polarization memory thanks to the magnetic field induced suppression of valley mixing. The lifetime of the dark excitons shows magnetic field and temperature dependence which is consistent with the theoretical prediction. The long dark exciton lifetime and valley polarization lifetime in 2D heterostructures make them promising for long-distance exciton transport and macroscopic quantum state generations.
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Submitted 8 March, 2017;
originally announced March 2017.
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Coherent control of a strongly driven silicon vacancy optical transition in diamond
Authors:
Yu Zhou,
Abdullah Rasmita,
Ke Li,
Qihua Xiong,
Igor Aharonovich,
Wei-bo Gao
Abstract:
The ability to prepare, optically read out and coherently control single quantum states is a key requirement for quantum information processing. Optically active solid state emitters have emerged as promising candidates with their prospects for on chip integration as quantum nodes and sources of coherent photons for connecting these nodes. Under strongly driving resonant laser field, such quantum…
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The ability to prepare, optically read out and coherently control single quantum states is a key requirement for quantum information processing. Optically active solid state emitters have emerged as promising candidates with their prospects for on chip integration as quantum nodes and sources of coherent photons for connecting these nodes. Under strongly driving resonant laser field, such quantum emitter can exhibit quantum behavior such as Autler-Townes splitting and Mollow triplet spectrum. Here we demonstrate coherent control of a strongly driven optical transition in silicon vacancy (SiV) center in diamond. Rapid optical detection of photons enabled the observation of time resolved coherent Rabi oscillations and the Mollow triplet from an optical transition of a single SiV defect. Detection with a probing transition further confirmed Autler-Townes splitting generated by a strong laser field. Coherence time of the emitted photons is shown to be comparable to its lifetime and robust under very strong driving laser field, which is promising for generation of indistinguishable photons.
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Submitted 22 January, 2017; v1 submitted 4 October, 2016;
originally announced October 2016.
