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Verifying Quantum Phase Estimation (QPE) using Prove-It
Authors:
Wayne M. Witzel,
Warren D. Craft,
Robert Carr,
Deepak Kapur
Abstract:
The general-purpose interactive theorem-proving assistant called Prove-It was used to verify the Quantum Phase Estimation (QPE) algorithm, specifically claims about its outcome probabilities. Prove-It is unique in its ability to express sophisticated mathematical statements, including statements about quantum circuits, integrated firmly within its formal theorem-proving framework. We demonstrate o…
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The general-purpose interactive theorem-proving assistant called Prove-It was used to verify the Quantum Phase Estimation (QPE) algorithm, specifically claims about its outcome probabilities. Prove-It is unique in its ability to express sophisticated mathematical statements, including statements about quantum circuits, integrated firmly within its formal theorem-proving framework. We demonstrate our ability to follow a textbook proof to produce a formally certified proof, highlighting useful automation features to fill in obvious steps and make formal proving nearly as straightforward as informal theorem proving. Finally, we make comparisons with formal theorem-proving in other systems where similar claims about QPE have been proven.
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Submitted 4 April, 2023;
originally announced April 2023.
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The remarkable prospect for quantum-dot-coupled tin qubits in silicon
Authors:
Wayne M. Witzel,
Jesse J. Lutz,
Dwight R. Luhman
Abstract:
Spin-$\frac{1}{2}$ $^{119}$Sn nuclei in a silicon semiconductor could make excellent qubits. Nuclear spins in silicon are known to have long coherence times. Tin is isoelectronic with silicon, so we expect electrons can easily shuttle from one Sn atom to another to propagate quantum information via a hyperfine interaction that we predict, from all-electron linearized augmented plane wave density f…
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Spin-$\frac{1}{2}$ $^{119}$Sn nuclei in a silicon semiconductor could make excellent qubits. Nuclear spins in silicon are known to have long coherence times. Tin is isoelectronic with silicon, so we expect electrons can easily shuttle from one Sn atom to another to propagate quantum information via a hyperfine interaction that we predict, from all-electron linearized augmented plane wave density functional theory calculations, to be roughly ten times larger than intrinsic $^{29}$Si. A hyperfine-induced electro-nuclear controlled-phase (e-n-CPhase) gate operation, generated (up to local rotations) by merely holding an electron at a sweet-spot of maximum hyperfine strength for a specific duration of time, is predicted to be exceptionally resilient to charge/voltage noise. Diabatic spin flips are suppressed with a modest magnetic field ($>15~$mT for $<10^{-6}$ flip probabilities) and nuclear spin bath noise may be avoided via isotopic enrichment or mitigated using dynamical decoupling or through monitoring and compensation. Combined with magnetic resonance control, this operation enables universal quantum computation.
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Submitted 13 June, 2022;
originally announced June 2022.
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Prove-It: A Proof Assistant for Organizing and Verifying General Mathematical Knowledge
Authors:
Wayne M. Witzel,
Warren D. Craft,
Robert D. Carr,
Joaquín E. Madrid Larrañaga
Abstract:
We introduce Prove-It, a Python-based general-purpose interactive theorem-proving assistant designed with the goal of making formal theorem proving as easy and natural as informal theorem proving (with moderate training). Prove-It uses a highly-flexible Jupyter notebook-based user interface that documents interactions and proof steps using LaTeX. We review Prove-It's highly expressive representati…
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We introduce Prove-It, a Python-based general-purpose interactive theorem-proving assistant designed with the goal of making formal theorem proving as easy and natural as informal theorem proving (with moderate training). Prove-It uses a highly-flexible Jupyter notebook-based user interface that documents interactions and proof steps using LaTeX. We review Prove-It's highly expressive representation of expressions, judgments, theorems, and proofs; demonstrate the system by constructing a traditional proof-by-contradiction that $\sqrt{2}\notin\mathbb{Q}$; and discuss how the system avoids inconsistencies such as Russell's and Curry's paradoxes. Extensive documentation is provided in the appendices about core elements of the system. Current development and future work includes promising applications to quantum circuit manipulation and quantum algorithm verification.
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Submitted 26 December, 2020; v1 submitted 20 December, 2020;
originally announced December 2020.
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Probing low noise at the MOS interface with a spin-orbit qubit
Authors:
Ryan M. Jock,
N. Tobias Jacobson,
Patrick Harvey-Collard,
Andrew M. Mounce,
Vanita Srinivasa,
Dan R. Ward,
John Anderson,
Ron Manginell,
Joel R. Wendt,
Martin Rudolph,
Tammy Pluym,
John King Gamble,
Andrew D. Baczewski,
Wayne M. Witzel,
Malcolm S. Carroll
Abstract:
The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns hav…
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The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns have been raised about the MOS interface (e.g. trap noise, variations in electron g-factor and practical implementation of multi-QDs). Furthermore, two-axis control of silicon qubits has, to date, required the integration of non-ideal components (e.g. microwave strip-lines, micro-magnets, triple quantum dots, or introduction of donor atoms). In this paper, we introduce a spin-orbit (SO) driven singlet-triplet (ST) qubit in silicon, demonstrating all-electrical two-axis control that requires no additional integrated elements and exhibits charge noise properties equivalent to other more model, but less commercially mature, semiconductor systems. We demonstrate the ability to tune an intrinsic spin-orbit interface effect, which is consistent with Rashba and Dresselhaus contributions that are remarkably strong for a low spin-orbit material such as silicon. The qubit maintains the advantages of using isotopically enriched silicon for producing a quiet magnetic environment, measuring spin dephasing times of 1.6 $μ$s using 99.95% $^{28}$Si epitaxy for the qubit, comparable to results from other isotopically enhanced silicon ST qubit systems. This work, therefore, demonstrates that the interface inherently provides properties for two-axis control, and the technologically important MOS interface does not add additional detrimental qubit noise.
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Submitted 13 July, 2017;
originally announced July 2017.
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Multi-qubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon
Authors:
Wayne M. Witzel,
Inès Montaño,
Richard P. Muller,
Malcolm S. Carroll
Abstract:
We present a strategy for producing multi-qubit gates that promise high fidelity with minimal tuning requirements. Our strategy combines gap protection from the adiabatic theorem with dynamical decoupling in a complementary manner. To avoid degenerate states and maximize the benefit of the gap protection, the scheme is best suited when there are two different kinds of qubits (not mutually resonant…
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We present a strategy for producing multi-qubit gates that promise high fidelity with minimal tuning requirements. Our strategy combines gap protection from the adiabatic theorem with dynamical decoupling in a complementary manner. To avoid degenerate states and maximize the benefit of the gap protection, the scheme is best suited when there are two different kinds of qubits (not mutually resonant). Furthermore, we require a robust operating point in control space where the qubits interact with little sensitivity to noise. This allows us to circumvent a No-Go theorem that prevents block-box dynamically corrected gates [Phys. Rev. A 80, 032314 (2009)]. We show how to apply our strategy to an architecture in Si with P donors where we assume we can shuttle electrons between different donors. Electron spins act as mobile ancillary qubits and P nuclear spins act as long-lived data qubits. This system can have a very robust operating point where the electron spin is bound to a donor in the quadratic Stark shift regime. High fidelity single qubit gates may be performed using well-established global magnetic resonance pulse sequences. Single electron spin preparation and measurement has also been demonstrated. Putting this all together, we present a robust universal gate set for quantum computation.
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Submitted 22 October, 2015; v1 submitted 8 October, 2014;
originally announced October 2014.
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Converting a real quantum bath to an effective classical noise
Authors:
Wayne M. Witzel,
Kevin Young,
Sankar Das Sarma
Abstract:
We present a cluster expansion method for approximating quantum spin-bath dynamics in terms of a classical Gaussian stochastic process. The cluster expansion produces the two-point correlation function of the approximate classical bath, permitting rapid evaluation of noise-mitigating quantum control strategies without resorting to computationally intensive dynamical decoupling models. Our approxim…
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We present a cluster expansion method for approximating quantum spin-bath dynamics in terms of a classical Gaussian stochastic process. The cluster expansion produces the two-point correlation function of the approximate classical bath, permitting rapid evaluation of noise-mitigating quantum control strategies without resorting to computationally intensive dynamical decoupling models. Our approximation is valid for the wide class of models possessing negligible back-action and nearly-Gaussian noise. We study several instances of the central spin decoherence problem in which the central spin and randomly-located bath spins are alike and dipolarly coupled. For various pulse sequences, we compare the coherence echo decay computed explicitly quantum mechanically versus those computed using our approximate classical model, and obtain agreement in most, but not all, cases. We demonstrate the utility of these classical noise models by efficiently searching for the 4-pulse sequences that maximally mitigate decoherence in each of these cases, a computationally expensive task in the explicit quantum model.
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Submitted 28 September, 2014; v1 submitted 9 July, 2013;
originally announced July 2013.
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Quantum Decoherence of the Central Spin in a Sparse System of Dipolar Coupled Spins
Authors:
Wayne M. Witzel,
Malcolm S. Carroll,
Lukasz Cywinski,
S. Das Sarma
Abstract:
The central spin decoherence problem has been researched for over 50 years in the context of both nuclear magnetic resonance and electron spin resonance. Until recently, theoretical models have employed phenomenological stochastic descriptions of the bath-induced noise. During the last few years, cluster expansion methods have provided a microscopic, quantum theory to study the spectral diffusion…
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The central spin decoherence problem has been researched for over 50 years in the context of both nuclear magnetic resonance and electron spin resonance. Until recently, theoretical models have employed phenomenological stochastic descriptions of the bath-induced noise. During the last few years, cluster expansion methods have provided a microscopic, quantum theory to study the spectral diffusion of a central spin. These methods have proven to be very accurate and efficient for problems of nuclear-induced electron spin decoherence in which hyperfine interactions with the central electron spin are much stronger than dipolar interactions among the nuclei. We provide an in-depth study of central spin decoherence for a canonical scale-invariant all-dipolar spin system. We show how cluster methods may be adapted to treat this problem in which central and bath spin interactions are of comparable strength. Our extensive numerical work shows that a properly modified cluster theory is convergent for this problem even as simple perturbative arguments begin to break down. By treating clusters in the presence of energy detunings due to the long-range (diagonal) dipolar interactions of the surrounding environment and carefully averaging the effects over different spin states, we find that the nontrivial flip-flop dynamics among the spins becomes effectively localized by disorder in the energy splittings of the spins. This localization effect allows for a robust calculation of the spin echo signal in a dipolarly coupled bath of spins of the same kind, while considering clusters of no more than 6 spins. We connect these microscopic calculation results to the existing stochastic models. We, furthermore, present calculations for a series of related problems of interest for candidate solid state quantum bits including donors and quantum dots in silicon as well as nitrogen-vacancy centers in diamond.
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Submitted 2 August, 2012; v1 submitted 12 April, 2012;
originally announced April 2012.
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Measuring central-spin interaction with a spin bath by pulsed ENDOR: Towards suppression of spin diffusion decoherence
Authors:
S. J. Balian,
M. B. A. Kunze,
M. H. Mohammady,
G. W. Morley,
W. M. Witzel,
C. W. M. Kay,
T. S. Monteiro
Abstract:
We present pulsed electron-nuclear double resonance (ENDOR) experiments which enable us to characterize the coupling between bismuth donor spin qubits in Si and the surrounding spin bath of 29Si impurities which provides the dominant decoherence mechanism (nuclear spin diffusion) at low temperatures (< 16 K). Decoupling from the spin bath is predicted and cluster correlation expansion simulations…
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We present pulsed electron-nuclear double resonance (ENDOR) experiments which enable us to characterize the coupling between bismuth donor spin qubits in Si and the surrounding spin bath of 29Si impurities which provides the dominant decoherence mechanism (nuclear spin diffusion) at low temperatures (< 16 K). Decoupling from the spin bath is predicted and cluster correlation expansion simulations show near-complete suppression of spin diffusion, at optimal working points. The suppression takes the form of sharply peaked divergences of the spin diffusion coherence time, in contrast with previously identified broader regions of insensitivity to classical fluctuations. ENDOR data suggest that anisotropic contributions are comparatively weak, so the form of the divergences is largely independent of crystal orientation.
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Submitted 8 October, 2012; v1 submitted 26 March, 2012;
originally announced March 2012.
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SiGe/Si quantum dot electron spin decoherence dependence on $^{73}$Ge
Authors:
Wayne M. Witzel,
Rajib Rahman,
Malcolm S. Carroll
Abstract:
We theoretically study the nuclear spin induced decoherence of a quantum dot in Si that is confined at a SiGe interface. We calculate decoherence time dependence on $^{73}$Ge in the barrier layer to evaluate the importance of Ge as well as Si enrichment for long decoherence times. We use atomistic tight-binding modeling for an accurate account of the electron wavefunction which is particularly imp…
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We theoretically study the nuclear spin induced decoherence of a quantum dot in Si that is confined at a SiGe interface. We calculate decoherence time dependence on $^{73}$Ge in the barrier layer to evaluate the importance of Ge as well as Si enrichment for long decoherence times. We use atomistic tight-binding modeling for an accurate account of the electron wavefunction which is particularly important for determining the contact hyperfine interactions with the Ge nuclear spins. We find decoherence times due to Ge spins at natural concentrations to be milliseconds. This suggests SiGe/Si quantum dot devices employing enriched Si will require enriched Ge as well in order to benefit from long coherence times. We provide a comparison of $T_2$ times for various fractions of nonzero spin isotopes of Si and Ge.
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Submitted 14 May, 2012; v1 submitted 18 October, 2011;
originally announced October 2011.
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Quantum control of hybrid nuclear-electronic qubits
Authors:
Gavin W. Morley,
Petra Lueders,
M. Hamed Mohammady,
Setrak J. Balian,
Gabriel Aeppli,
Christopher W. M. Kay,
Wayne M. Witzel,
Gunnar Jeschke,
Tania S. Monteiro
Abstract:
Pulsed magnetic resonance is a wide-reaching technology allowing the quantum state of electronic and nuclear spins to be controlled on the timescale of nanoseconds and microseconds respectively. The time required to flip either dilute electronic or nuclear spins is orders of magnitude shorter than their decoherence times, leading to several schemes for quantum information processing with spin qubi…
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Pulsed magnetic resonance is a wide-reaching technology allowing the quantum state of electronic and nuclear spins to be controlled on the timescale of nanoseconds and microseconds respectively. The time required to flip either dilute electronic or nuclear spins is orders of magnitude shorter than their decoherence times, leading to several schemes for quantum information processing with spin qubits. We investigate instead the novel regime where the eigenstates approximate 50:50 superpositions of the electronic and nuclear spin states forming "hybrid nuclear-electronic" qubits. Here we demonstrate quantum control of these states for the first time, using bismuth-doped silicon, in just 32 ns: this is orders of magnitude faster than previous experiments where pure nuclear states were used. The coherence times of our states are five orders of magnitude longer, reaching 4 ms, and are limited by the naturally-occurring 29Si nuclear spin impurities. There is quantitative agreement between our experiments and no-free-parameter analytical theory for the resonance positions, as well as their relative intensities and relative Rabi oscillation frequencies. In experiments where the slow manipulation of some of the qubits is the rate limiting step, quantum computations would benefit from faster operation in the hybrid regime.
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Submitted 16 December, 2011; v1 submitted 20 September, 2011;
originally announced September 2011.
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Optimized pulses for the control of uncertain qubits
Authors:
Matthew D. Grace,
Jason Dominy,
Wayne M. Witzel,
Malcolm S. Carroll
Abstract:
Constructing high-fidelity control fields that are robust to control, system, and/or surrounding environment uncertainties is a crucial objective for quantum information processing. Using the two-state Landau-Zener model for illustrative simulations of a controlled qubit, we generate optimal controls for π/2- and π-pulses, and investigate their inherent robustness to uncertainty in the magnitude o…
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Constructing high-fidelity control fields that are robust to control, system, and/or surrounding environment uncertainties is a crucial objective for quantum information processing. Using the two-state Landau-Zener model for illustrative simulations of a controlled qubit, we generate optimal controls for π/2- and π-pulses, and investigate their inherent robustness to uncertainty in the magnitude of the drift Hamiltonian. Next, we construct a quantum-control protocol to improve system-drift robustness by combining environment-decoupling pulse criteria and optimal control theory for unitary operations. By perturbatively expanding the unitary time-evolution operator for an open quantum system, previous analysis of environment-decoupling control pulses has calculated explicit control-field criteria to suppress environment-induced errors up to (but not including) third order from π/2- and π-pulses. We systematically integrate this criteria with optimal control theory, incorporating an estimate of the uncertain parameter, to produce improvements in gate fidelity and robustness, demonstrated via a numerical example based on double quantum dot qubits. For the qubit model used in this work, post facto analysis of the resulting controls suggests that realistic control-field fluctuations and noise may contribute just as significantly to gate errors as system and environment fluctuations.
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Submitted 21 May, 2012; v1 submitted 11 May, 2011;
originally announced May 2011.
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Electron spin decoherence in isotope-enriched silicon
Authors:
Wayne M. Witzel,
Malcolm S. Carroll,
Andrea Morello,
Lukasz Cywinski,
S. Das Sarma
Abstract:
Silicon is promising for spin-based quantum computation because nuclear spins, a source of magnetic noise, may be eliminated through isotopic enrichment. Long spin decoherence times, $T_2$, have been measured in isotope-enriched silicon but come far short of the $T_2 = 2 T_1$ limit. The effect of nuclear spins on $T_2$ is well established. However, the effect of background electron spins from ever…
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Silicon is promising for spin-based quantum computation because nuclear spins, a source of magnetic noise, may be eliminated through isotopic enrichment. Long spin decoherence times, $T_2$, have been measured in isotope-enriched silicon but come far short of the $T_2 = 2 T_1$ limit. The effect of nuclear spins on $T_2$ is well established. However, the effect of background electron spins from ever present residual phosphorus impurities in silicon can also produce significant decoherence. We study spin decoherence decay as a function of donor concentration, $^{29}$Si concentration, and temperature using cluster expansion techniques specifically adapted to the problem of a sparse dipolarly coupled electron spin bath. Our results agree with the existing experimental spin echo data in Si:P and establish the importance of background dopants as the ultimate decoherence mechanism in isotope-enriched silicon.
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Submitted 27 October, 2010; v1 submitted 13 August, 2010;
originally announced August 2010.
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Pure quantum dephasing of a solid state electron spin qubit in a large nuclear spin bath coupled by long-range hyperfine-mediated interactions
Authors:
L. Cywinski,
W. M. Witzel,
S. Das Sarma
Abstract:
We investigate decoherence due to pure dephasing of a localized spin qubit interacting with a nuclear spin bath. Although in the limit of a very large magnetic field the only decoherence mechanism is spectral diffusion due to dipolar flip-flops of nuclear spins, with decreasing field the hyperfine-mediated interactions between the nuclear spins become important. We take advantage of their long-r…
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We investigate decoherence due to pure dephasing of a localized spin qubit interacting with a nuclear spin bath. Although in the limit of a very large magnetic field the only decoherence mechanism is spectral diffusion due to dipolar flip-flops of nuclear spins, with decreasing field the hyperfine-mediated interactions between the nuclear spins become important. We take advantage of their long-range nature, and resum the leading terms in an 1/N expansion of the decoherence time-evolution function (N, being the number of nuclear spins interacting appreciably with the electron spin, is large). For the case of the thermal uncorrelated bath we show that our theory is applicable down to low magnetic fields (~10 mT for a large dot with N=10^6) allowing for comparison with recent experiments in GaAs quantum dot spin qubits. Within this approach we calculate the free induction decay and spin echo decoherence in GaAs and InGaAs as a function of the number of the nuclei in the bath (i.e. the quantum dot size) and the magnetic field. Our theory for free induction decay in a narrowed nuclear bath is shown to agree with the exact solution for decoherence due to hyperfine-mediated interaction which can be obtained when all the nuclei-electron coupling constants are identical. For the spin echo evolution we show that the dominant decoherence process at low fields is due to interactions between nuclei having significantly different Zeeman energies (i.e. nuclei of As and two isotopes of Ga in GaAs), and we compare our results with recent measurements of spin echo signal of a single spin confined in a GaAs quantum dot. For the same set of parameters we perform calculations of decoherence under various dynamical decoupling pulse sequences, and predict the effect of these sequences in low B regime in GaAs.
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Submitted 29 May, 2009; v1 submitted 12 March, 2009;
originally announced March 2009.
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Electron Spin Dephasing due to Hyperfine Interactions with a Nuclear Spin Bath
Authors:
L. Cywinski,
W. M. Witzel,
S. Das Sarma
Abstract:
We investigate pure dephasing decoherence (free induction decay and spin echo) of a spin qubit interacting with a nuclear spin bath. While for infinite magnetic field B the only decoherence mechanism is spectral diffusion due to dipolar flip-flops of nuclear spins, with decreasing B the hyperfine-mediated interactions between the nuclear spins become important. We give a theory of decoherence du…
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We investigate pure dephasing decoherence (free induction decay and spin echo) of a spin qubit interacting with a nuclear spin bath. While for infinite magnetic field B the only decoherence mechanism is spectral diffusion due to dipolar flip-flops of nuclear spins, with decreasing B the hyperfine-mediated interactions between the nuclear spins become important. We give a theory of decoherence due to these interactions which takes advantage of their long-range nature. For a thermal uncorrelated bath we show that our theory is applicable down to B~10 mT, allowing for comparison with recent experiments in GaAs quantum dots.
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Submitted 3 February, 2009; v1 submitted 29 August, 2008;
originally announced September 2008.
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Universal pulse sequence to minimize spin dephasing in the central spin decoherence problem
Authors:
B. Lee,
W. M. Witzel,
S. Das Sarma
Abstract:
We present a remarkable finding that a recently discovered [G. S. Uhrig, Phys. Rev. Lett. 98, 100504 (2007)] series of pulse sequences, designed to optimally restore coherence to a qubit in the spin-boson model of decoherence, is in fact completely model-independent and generically valid for arbitrary dephasing Hamiltonians given sufficiently short delay times between pulses. The series maximize…
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We present a remarkable finding that a recently discovered [G. S. Uhrig, Phys. Rev. Lett. 98, 100504 (2007)] series of pulse sequences, designed to optimally restore coherence to a qubit in the spin-boson model of decoherence, is in fact completely model-independent and generically valid for arbitrary dephasing Hamiltonians given sufficiently short delay times between pulses. The series maximizes qubit fidelity versus number of applied pulses for sufficiently short delay times because the series, with each additional pulse, cancels successive orders of a time expansion for the fidelity decay. The "magical" universality of this property, which was not appreciated earlier, requires that a linearly growing set of "unknowns" (the delay times) must simultaneously satisfy an exponentially growing set of nonlinear equations that involve arbitrary dephasing Hamiltonian operators.
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Submitted 25 April, 2008; v1 submitted 7 October, 2007;
originally announced October 2007.
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Concatenated dynamical decoupling in a solid-state spin bath
Authors:
W. M. Witzel,
S. Das Sarma
Abstract:
Concatenated dynamical decoupling (CDD) pulse sequences hold much promise as a strategy to mitigate decoherence in quantum information processing. It is important to investigate the actual performance of these dynamical decoupling strategies in real systems that are promising qubit candidates. In this Rapid Communication, we compute the echo decay of concatenations of the Hahn echo sequence for…
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Concatenated dynamical decoupling (CDD) pulse sequences hold much promise as a strategy to mitigate decoherence in quantum information processing. It is important to investigate the actual performance of these dynamical decoupling strategies in real systems that are promising qubit candidates. In this Rapid Communication, we compute the echo decay of concatenations of the Hahn echo sequence for a solid-state electronic spin qubit in a nuclear spin bath using a cluster expansion technique. We find that each level of concatenation reverses the effect of successive levels of intrabath fluctuations. On the one hand, this advances CDD as a versatile and realistic decoupling strategy. On the other hand, this invalidates, as overly optimistic, results of the simple pair approximation used previously to study restoration, through CDD, of coherence lost to a mesoscopic spin bath.
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Submitted 13 December, 2007; v1 submitted 7 July, 2007;
originally announced July 2007.
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Nuclear Spins as Quantum Memory in Semiconductor Nanostructures
Authors:
W. M. Witzel,
S. Das Sarma
Abstract:
We theoretically consider solid state nuclear spins in a semiconductor nanostructure environment as long-lived, high-fidelity quantum memory. In particular, we calculate, in the limit of a strong applied magnetic field, the fidelity versus time of P donor nuclear spins in random bath environments of Si and GaAs, and the lifetime of excited intrinsic spins in polarized Si and GaAs environments. I…
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We theoretically consider solid state nuclear spins in a semiconductor nanostructure environment as long-lived, high-fidelity quantum memory. In particular, we calculate, in the limit of a strong applied magnetic field, the fidelity versus time of P donor nuclear spins in random bath environments of Si and GaAs, and the lifetime of excited intrinsic spins in polarized Si and GaAs environments. In the former situation, the nuclear spin dephases due to spectral diffusion induced by the dipolar interaction among nuclei in the bath. We calculate the decay of nuclear spin quantum memory in the context of Hahn and Carr-Purcell-Meiboom-Gill (CPMG) refocused spin echoes using a formally exact cluster expansion technique which has previously been successful in dealing with electron spin dephasing in a solid state nuclear spin bath. With decoherence dominated by transverse dephasing (T2), we find it feasible to maintain high fidelity (losses of less than 10^{-6}) quantum memory on nuclear spins for times of the order of 100 microseconds (GaAs:P) and 1 to 2 milliseconds (natural Si:P) using CPMG pulse sequences of just a few (~2-4) applied pulses. We also consider the complementary situation of a central flipped intrinsic nuclear spin in a bath of completely polarized nuclear spins where decoherence is caused by the direct flip-flop of the central spin with spins in the bath. Exact numerical calculations that include a sufficiently large neighborhood of surrounding nuclei show lifetimes on the order of 1-5 ms for both GaAs and natural Si. Our calculated nuclear spin coherence times may have significance for solid state quantum computer architectures using localized electron spins in semiconductors where nuclear spins have been proposed for quantum memory storage.
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Submitted 1 August, 2007; v1 submitted 19 January, 2007;
originally announced January 2007.
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Decoherence induced by anisotropic hyperfine interaction in Si spin qubits
Authors:
W. M. Witzel,
Xuedong Hu,
S. Das Sarma
Abstract:
We study Si:P donor electron spin decoherence due to anisotropic hyperfine (AHF) interaction with the surrounding nuclear spin bath. In particular, we clarify the electron spin echo envelope modulation (ESEEM) in the Si:P system and the resonancelike contributions from nuclear spins in various shells away from the P atoms. We suggest an approach to minimize AHF-induced decoherence by avoiding th…
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We study Si:P donor electron spin decoherence due to anisotropic hyperfine (AHF) interaction with the surrounding nuclear spin bath. In particular, we clarify the electron spin echo envelope modulation (ESEEM) in the Si:P system and the resonancelike contributions from nuclear spins in various shells away from the P atoms. We suggest an approach to minimize AHF-induced decoherence by avoiding the resonances and orienting an applied magnetic field along directions that can periodically eliminate contributions from the dominant nearest neighbor atoms. Our remarkable agreement with experiment demonstrates nearly complete understanding of electron spin decoherence in Si:P when combining ESEEM, spectral diffusion, instantaneous diffusion, and spin-lattice relaxation.
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Submitted 1 August, 2007; v1 submitted 15 January, 2007;
originally announced January 2007.
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Multiple-pulse coherence enhancement of solid state spin qubits
Authors:
W. M. Witzel,
S. Das Sarma
Abstract:
We describe how the spin coherence time of a localized electron spin in solids, i.e. a solid state spin qubit, can be prolonged by applying designed electron spin resonance pulse sequences. In particular, the spin echo decay due to the spectral diffusion of the electron spin resonance frequency induced by the non-Markovian temporal fluctuations of the nuclear spin flip-flop dynamics can be stron…
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We describe how the spin coherence time of a localized electron spin in solids, i.e. a solid state spin qubit, can be prolonged by applying designed electron spin resonance pulse sequences. In particular, the spin echo decay due to the spectral diffusion of the electron spin resonance frequency induced by the non-Markovian temporal fluctuations of the nuclear spin flip-flop dynamics can be strongly suppressed using multiple-pulse sequences akin to the Carr-Purcell-Meiboom-Gill pulse sequence in nuclear magnetic resonance. Spin coherence time can be enhanced by factors of 4-10 in GaAs quantum dot and Si:P quantum computer architectures using composite sequences with an even number of pulses.
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Submitted 13 February, 2007; v1 submitted 25 April, 2006;
originally announced April 2006.
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Quantum theory for electron spin decoherence induced by nuclear spin dynamics in semiconductor quantum computer architectures: Spectral diffusion of localized electron spins in the nuclear solid-state environment
Authors:
W. M. Witzel,
S. Das Sarma
Abstract:
We consider the decoherence of a single localized electron spin due to its coupling to the lattice nuclear spin bath in a semiconductor quantum computer architecture. In the presence of an external magnetic field and at low temperatures, the dominant decoherence mechanism is the spectral diffusion of the electron spin resonance frequency due to the temporally fluctuating random magnetic field as…
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We consider the decoherence of a single localized electron spin due to its coupling to the lattice nuclear spin bath in a semiconductor quantum computer architecture. In the presence of an external magnetic field and at low temperatures, the dominant decoherence mechanism is the spectral diffusion of the electron spin resonance frequency due to the temporally fluctuating random magnetic field associated with the dipolar interaction induced flip-flops of nuclear spin pairs. The electron spin dephasing due to this random magnetic field depends intricately on the quantum dynamics of the nuclear spin bath, making the coupled decoherence problem difficult to solve. We provide a formally exact solution of this non-Markovian quantum decoherence problem which numerically calculates accurate spin decoherence at short times, which is of particular relevance in solid-state spin quantum computer architectures. A quantum cluster expansion method is developed, motivated, and tested for the problem of localized electron spin decoherence due to dipolar fluctuations of lattice nuclear spins. The method is presented with enough generality for possible application to other types of spin decoherence problems. We present numerical results which are in quantitative agreement with electron spin echo measurements in phosphorus doped silicon. We also present spin echo decay results for quantum dots in GaAs which differ qualitatively from that of the phosphorus doped silicon system. Our theoretical results provide the ultimate limit on the spin coherence (at least, as characterized by Hahn spin echo measurements) of localized electrons in semiconductors in the low temperature and the moderate to high magnetic field regime of interest in scalable semiconductor quantum computer architectures.
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Submitted 22 July, 2006; v1 submitted 14 December, 2005;
originally announced December 2005.
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Quantum theory of spectral diffusion induced electron spin decoherence
Authors:
W. M. Witzel,
Rogerio de Sousa,
S. Das Sarma
Abstract:
A quantum cluster expansion method is developed for the problem of localized electron spin decoherence due to dipolar fluctuations of lattice nuclear spins. At the lowest order it provides a microscopic explanation for the Lorentzian diffusion of Hahn echoes without resorting to any phenomenological Markovian assumption. Our numerical results show remarkable agreement with recent electron spin e…
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A quantum cluster expansion method is developed for the problem of localized electron spin decoherence due to dipolar fluctuations of lattice nuclear spins. At the lowest order it provides a microscopic explanation for the Lorentzian diffusion of Hahn echoes without resorting to any phenomenological Markovian assumption. Our numerical results show remarkable agreement with recent electron spin echo experiments in phosphorus doped silicon.
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Submitted 28 October, 2005; v1 submitted 20 January, 2005;
originally announced January 2005.