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A Compact Cold-Atom Interferometer with a High Data-Rate Grating Magneto-Optical Trap and a Photonic-Integrated-Circuit-Compatible Laser System
Authors:
Jongmin Lee,
Roger Ding,
Justin Christensen,
Randy R. Rosenthal,
Aaron Ison,
Daniel Paul Gillund,
David Bossert,
Kyle H. Fuerschbach,
William Kindel,
Patrick S. Finnegan,
Joel R. Wendt,
Michael Gehl,
Ashok Kodigala,
Hayden McGuinness,
Charles A. Walker,
Shanalyn A. Kemme,
Anthony Lentine,
Grant Biedermann,
Peter D. D. Schwindt
Abstract:
The extreme miniaturization of a cold-atom interferometer accelerometer requires the development of novel technologies and architectures for the interferometer subsystems. Here we describe several component technologies and a laser system architecture to enable a path to such miniaturization. We developed a custom, compact titanium vacuum package containing a microfabricated grating chip for a tet…
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The extreme miniaturization of a cold-atom interferometer accelerometer requires the development of novel technologies and architectures for the interferometer subsystems. Here we describe several component technologies and a laser system architecture to enable a path to such miniaturization. We developed a custom, compact titanium vacuum package containing a microfabricated grating chip for a tetrahedral grating magneto-optical trap (GMOT) using a single cooling beam. In addition, we designed a multi-channel photonic-integrated-circuit-compatible laser system implemented with a single seed laser and single sideband modulators in a time-multiplexed manner, reducing the number of optical channels connected to the sensor head. In a compact sensor head containing the vacuum package, sub-Doppler cooling in the GMOT produces 15 uK temperatures, and the GMOT can operate at a 20 Hz data rate. We validated the atomic coherence with Ramsey interferometry using microwave spectroscopy, then demonstrated a light-pulse atom interferometer in a gravimeter configuration for a 10 Hz measurement data rate and T = 0 - 4.5 ms interrogation time, resulting in $Δ$ g / g = 2.0e-6. This work represents a significant step towards deployable cold-atom inertial sensors under large amplitude motional dynamics.
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Submitted 1 September, 2022; v1 submitted 10 July, 2021;
originally announced July 2021.
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Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon
Authors:
Patrick Harvey-Collard,
N. Tobias Jacobson,
Chloé Bureau-Oxton,
Ryan M. Jock,
Vanita Srinivasa,
Andrew M. Mounce,
Daniel R. Ward,
John M. Anderson,
Ronald P. Manginell,
Joel R. Wendt,
Tammy Pluym,
Michael P. Lilly,
Dwight R. Luhman,
Michel Pioro-Ladrière,
Malcolm S. Carroll
Abstract:
Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the s…
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Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the spins of separated singlet-triplet electron pairs. We observe both intravalley and intervalley mechanisms, each dominant for [110] and [100] magnetic field orientations, respectively, that are consistent with a broken crystal symmetry model. We also observe a third spin-flip mechanism caused by tunneling between the quantum dots. This improved understanding is important for qubit uniformity, spin control and decoherence, and two-qubit gates.
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Submitted 11 June, 2019; v1 submitted 22 August, 2018;
originally announced August 2018.
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Probing low noise at the MOS interface with a spin-orbit qubit
Authors:
Ryan M. Jock,
N. Tobias Jacobson,
Patrick Harvey-Collard,
Andrew M. Mounce,
Vanita Srinivasa,
Dan R. Ward,
John Anderson,
Ron Manginell,
Joel R. Wendt,
Martin Rudolph,
Tammy Pluym,
John King Gamble,
Andrew D. Baczewski,
Wayne M. Witzel,
Malcolm S. Carroll
Abstract:
The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns hav…
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The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns have been raised about the MOS interface (e.g. trap noise, variations in electron g-factor and practical implementation of multi-QDs). Furthermore, two-axis control of silicon qubits has, to date, required the integration of non-ideal components (e.g. microwave strip-lines, micro-magnets, triple quantum dots, or introduction of donor atoms). In this paper, we introduce a spin-orbit (SO) driven singlet-triplet (ST) qubit in silicon, demonstrating all-electrical two-axis control that requires no additional integrated elements and exhibits charge noise properties equivalent to other more model, but less commercially mature, semiconductor systems. We demonstrate the ability to tune an intrinsic spin-orbit interface effect, which is consistent with Rashba and Dresselhaus contributions that are remarkably strong for a low spin-orbit material such as silicon. The qubit maintains the advantages of using isotopically enriched silicon for producing a quiet magnetic environment, measuring spin dephasing times of 1.6 $μ$s using 99.95% $^{28}$Si epitaxy for the qubit, comparable to results from other isotopically enhanced silicon ST qubit systems. This work, therefore, demonstrates that the interface inherently provides properties for two-axis control, and the technologically important MOS interface does not add additional detrimental qubit noise.
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Submitted 13 July, 2017;
originally announced July 2017.
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Quantum dots with split enhancement gate tunnel barrier control
Authors:
S. Rochette,
M. Rudolph,
A. -M. Roy,
M. Curry,
G. Ten Eyck,
R. Manginell,
J. Wendt,
T. Pluym,
S. M. Carr,
D. Ward,
M. P. Lilly,
M. S. Carroll,
M. Pioro-Ladrière
Abstract:
We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a quantum dot. We demonstrate, in three devices based on two different versions of this elementary structure, that a wide range of tunnel rates is attai…
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We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a quantum dot. We demonstrate, in three devices based on two different versions of this elementary structure, that a wide range of tunnel rates is attainable while maintaining single-electron occupation. A characteristic change in slope of the charge transitions as a function of the reservoir gate voltage, attributed to screening from charges in the reservoir, is observed in all devices, and is expected to play a role in the sizable tuning orthogonality of the split enhancement gate structure. The all-silicon process is expected to minimize strain gradients from electrode thermal mismatch, while the single gate layer should avoid issues related to overlayers (e.g., additional dielectric charge noise) and help improve yield. Finally, reservoir gate control of the tunnel barrier has implications for initialization, manipulation and readout schemes in multi-quantum dot architectures.
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Submitted 5 March, 2019; v1 submitted 12 July, 2017;
originally announced July 2017.
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High-fidelity single-shot readout for a spin qubit via an enhanced latching mechanism
Authors:
Patrick Harvey-Collard,
Benjamin D'Anjou,
Martin Rudolph,
N. Tobias Jacobson,
Jason Dominguez,
Gregory A. Ten Eyck,
Joel R. Wendt,
Tammy Pluym,
Michael P. Lilly,
William A. Coish,
Michel Pioro-Ladrière,
Malcolm S. Carroll
Abstract:
The readout of semiconductor spin qubits based on spin blockade is fast but suffers from a small charge signal. Previous work suggested large benefits from additional charge map** processes, however uncertainties remain about the underlying mechanisms and achievable fidelity. In this work, we study the single-shot fidelity and limiting mechanisms for two variations of an enhanced latching readou…
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The readout of semiconductor spin qubits based on spin blockade is fast but suffers from a small charge signal. Previous work suggested large benefits from additional charge map** processes, however uncertainties remain about the underlying mechanisms and achievable fidelity. In this work, we study the single-shot fidelity and limiting mechanisms for two variations of an enhanced latching readout. We achieve average single-shot readout fidelities > 99.3% and > 99.86% for the conventional and enhanced readout respectively, the latter being the highest to date for spin blockade. The signal amplitude is enhanced to a full one-electron signal while preserving the readout speed. Furthermore, layout constraints are relaxed because the charge sensor signal is no longer dependent on being aligned with the conventional (2, 0) - (1, 1) charge dipole. Silicon donor-quantum-dot qubits are used for this study, for which the dipole insensitivity substantially relaxes donor placement requirements. One of the readout variations also benefits from a parametric lifetime enhancement by replacing the spin-relaxation process with a charge-metastable one. This provides opportunities to further increase the fidelity. The relaxation mechanisms in the different regimes are investigated. This work demonstrates a readout that is fast, has one-electron signal and results in higher fidelity. It further predicts that going beyond 99.9% fidelity in a few microseconds of measurement time is within reach.
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Submitted 31 January, 2018; v1 submitted 7 March, 2017;
originally announced March 2017.
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Benchmarking Adiabatic Quantum Optimization for Complex Network Analysis
Authors:
Ojas Parekh,
Jeremy Wendt,
Luke Shulenburger,
Andrew Landahl,
Jonathan Moussa,
John Aidun
Abstract:
We lay the foundation for a benchmarking methodology for assessing current and future quantum computers. We pose and begin addressing fundamental questions about how to fairly compare computational devices at vastly different stages of technological maturity. We critically evaluate and offer our own contributions to current quantum benchmarking efforts, in particular those involving adiabatic quan…
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We lay the foundation for a benchmarking methodology for assessing current and future quantum computers. We pose and begin addressing fundamental questions about how to fairly compare computational devices at vastly different stages of technological maturity. We critically evaluate and offer our own contributions to current quantum benchmarking efforts, in particular those involving adiabatic quantum computation and the Adiabatic Quantum Optimizers produced by D-Wave Systems, Inc. We find that the performance of D-Wave's Adiabatic Quantum Optimizers scales roughly on par with classical approaches for some hard combinatorial optimization problems; however, architectural limitations of D-Wave devices present a significant hurdle in evaluating real-world applications. In addition to identifying and isolating such limitations, we develop algorithmic tools for circumventing these limitations on future D-Wave devices, assuming they continue to grow and mature at an exponential rate for the next several years.
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Submitted 1 April, 2016;
originally announced April 2016.
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Coherent coupling between a quantum dot and a donor in silicon
Authors:
Patrick Harvey-Collard,
N. Tobias Jacobson,
Martin Rudolph,
Jason Dominguez,
Gregory A. Ten Eyck,
Joel R. Wendt,
Tammy Pluym,
John King Gamble,
Michael P. Lilly,
Michel Pioro-Ladrière,
Malcolm S. Carroll
Abstract:
Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in contrast, are highly adjustable using electrical gate voltages. This adjustability could be leveraged to deterministically couple donors to quantum dots in arrays of…
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Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in contrast, are highly adjustable using electrical gate voltages. This adjustability could be leveraged to deterministically couple donors to quantum dots in arrays of qubits. In this work, we demonstrate the coherent interaction of a $^{31}$P donor electron with the electron of a metal-oxide-semiconductor quantum dot. We form a logical qubit encoded in the spin singlet and triplet states of the two-electron system. We show that the donor nuclear spin drives coherent rotations between the electronic qubit states through the contact hyperfine interaction. This provides every key element for compact two-electron spin qubits requiring only a single dot and no additional magnetic field gradients, as well as a means to interact with the nuclear spin qubit.
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Submitted 18 October, 2017; v1 submitted 4 December, 2015;
originally announced December 2015.
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Spontaneous emission in a silicon charge qubit
Authors:
Khoi T. Nguyen,
N. Tobias Jacobson,
Michael P. Lilly,
Nathaniel C. Bishop,
Erik Nielsen,
Joel R. Wendt,
J. Dominguez,
T. Pluym,
Malcolm S. Carroll
Abstract:
The interaction between a qubit and its environment provides a channel for energy relaxation which has an energy-dependent timescale governed by the specific coupling mechanism. We measure the rate of inelastic decay in a Si MOS double quantum dot (DQD) charge qubit through sensing the charge state's response to non-adiabatic driving of its excited state population. The charge distribution is sens…
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The interaction between a qubit and its environment provides a channel for energy relaxation which has an energy-dependent timescale governed by the specific coupling mechanism. We measure the rate of inelastic decay in a Si MOS double quantum dot (DQD) charge qubit through sensing the charge state's response to non-adiabatic driving of its excited state population. The charge distribution is sensed remotely in the weak measurement regime. We extract emission rates down to kHz frequencies by measuring the variation of the non-equilibrium charge occupancy as a function of amplitude and dwell times between non-adiabatic pulses. Our measurement of the energy-dependent relaxation rate provides a fingerprint of the relaxation mechanism, indicating that relaxation rates for this Si MOS DQD are consistent with coupling to deformation acoustic phonons.
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Submitted 14 March, 2014;
originally announced March 2014.
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Atom trap** in a bottle beam created by a diffractive optical element
Authors:
V. V. Ivanov,
J. A. Isaacs,
M. Saffman,
S. A. Kemme,
A. R. Ellis,
G. R. Brady,
J. R. Wendt,
G. W. Biedermann,
S. Samora
Abstract:
A diffractive optical element (DOE) has been fabricated for creating blue detuned atomic bottle beam traps. The DOE integrates several diffractive lenses for trap creation and imaging of atomic fluorescence. We characterize the performance of the DOE and demonstrate trap** of cold Cesium atoms inside a bottle beam.
A diffractive optical element (DOE) has been fabricated for creating blue detuned atomic bottle beam traps. The DOE integrates several diffractive lenses for trap creation and imaging of atomic fluorescence. We characterize the performance of the DOE and demonstrate trap** of cold Cesium atoms inside a bottle beam.
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Submitted 23 May, 2013;
originally announced May 2013.
