Showing 1–15 of 15 results for author: Ward, D

Full-permutation dynamical decoupling in triple-quantum-dot spin qubits

Authors: Bo Sun, Teresa Brecht, Bryan Fong, Moonmoon Akmal, Jacob Z. Blumoff, Tyler A. Cain, Faustin W. Carter, Dylan H. Finestone, Micha N. Fireman, Wonill Ha, Anthony T. Hatke, Ryan M. Hickey, Clayton A. C. Jackson, Ian Jenkins, Aaron M. Jones, Andrew Pan, Daniel R. Ward, Aaron J. Weinstein, Samuel J. Whiteley, Parker Williams, Matthew G. Borselli, Matthew T. Rakher, Thaddeus D. Ladd

Abstract: Dynamical decoupling of spin qubits in silicon can enhance fidelity and be used to extract the frequency spectra of noise processes. We demonstrate a full-permutation dynamical decoupling technique that cyclically exchanges the spins in a triple-dot qubit. This sequence not only suppresses both low frequency charge-noise- and magnetic-noise-induced errors; it also refocuses leakage errors to first… ▽ More Dynamical decoupling of spin qubits in silicon can enhance fidelity and be used to extract the frequency spectra of noise processes. We demonstrate a full-permutation dynamical decoupling technique that cyclically exchanges the spins in a triple-dot qubit. This sequence not only suppresses both low frequency charge-noise- and magnetic-noise-induced errors; it also refocuses leakage errors to first order, which is particularly interesting for encoded exchange-only qubits. For a specific construction, which we call NZ1y, the qubit is isolated from error sources to such a degree that we measure a remarkable exchange pulse error of $5\times10^{-5}$. This sequence maintains a quantum state for roughly 18,000 exchange pulses, extending the qubit coherence from $T_2^*=2~μ$s to $T_2 = 720~μ$s. We experimentally validate an error model that includes $1/f$ charge noise and $1/f$ magnetic noise in two ways: by direct exchange-qubit simulation, and by integration of the assumed noise spectra with derived filter functions, both of which reproduce the measured error and leakage with respect to changing the repetition rate. △ Less

Submitted 7 September, 2022; v1 submitted 24 August, 2022; originally announced August 2022.

Comments: 12 pages, 4 figures

A silicon singlet-triplet qubit driven by spin-valley coupling

Authors: Ryan M. Jock, N. Tobias Jacobson, Martin Rudolph, Daniel R. Ward, Malcolm S. Carroll, Dwight R. Luhman

Abstract: Spin-orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-chip, nanofabricated micromagnets or nearby coplanar striplines. Here, we demonstrate a novel singlet-triplet qubit operating mode that can drive qubit evolution at frequencies in excess of 200 MHz. This approach offers… ▽ More Spin-orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-chip, nanofabricated micromagnets or nearby coplanar striplines. Here, we demonstrate a novel singlet-triplet qubit operating mode that can drive qubit evolution at frequencies in excess of 200 MHz. This approach offers a means to electrically turn on and off fast control, while providing high logic gate orthogonality and long qubit dephasing times. We utilize this operational mode for dynamical decoupling experiments to probe the charge noise power spectrum in a silicon metal-oxide-semiconductor double quantum dot. In addition, we assess qubit frequency drift over longer timescales to capture low-frequency noise. We present the charge noise power spectral density up to 3 MHz, which exhibits a $1/f^α$ dependence consistent with $α\sim 0.7$, over 9 orders of magnitude in noise frequency. △ Less

Submitted 11 November, 2021; v1 submitted 24 February, 2021; originally announced February 2021.

Comments: Supplementary information included with the paper

Journal ref: Nature Communications 13, 641 (2022)

Repetitive quantum non-demolition measurement and soft decoding of a silicon spin qubit

Authors: Xiao Xue, Benjamin D'Anjou, Thomas F. Watson, Daniel R. Ward, Donald E. Savage, Max G. Lagally, Mark Friesen, Susan N. Coppersmith, Mark A. Eriksson, William A. Coish, Lieven M. K. Vandersypen

Abstract: Quantum error correction is of crucial importance for fault-tolerant quantum computers. As an essential step towards the implementation of quantum error-correcting codes, quantum non-demolition (QND) measurements are needed to efficiently detect the state of a logical qubit without destroying it. Here we implement QND measurements in a Si/SiGe two-qubit system, with one qubit serving as the logica… ▽ More Quantum error correction is of crucial importance for fault-tolerant quantum computers. As an essential step towards the implementation of quantum error-correcting codes, quantum non-demolition (QND) measurements are needed to efficiently detect the state of a logical qubit without destroying it. Here we implement QND measurements in a Si/SiGe two-qubit system, with one qubit serving as the logical qubit and the other serving as the ancilla. Making use of a two-qubit controlled-rotation gate, the state of the logical qubit is mapped onto the ancilla, followed by a destructive readout of the ancilla. Repeating this procedure enhances the logical readout fidelity from $75.5\pm 0.3\%$ to $94.5 \pm 0.2\%$ after 15 ancilla readouts. In addition, we compare the conventional thresholding method with an improved signal processing method called soft decoding that makes use of analog information in the readout signal to better estimate the state of the logical qubit. We demonstrate that soft decoding leads to a significant reduction in the required number of repetitions when the readout errors become limited by Gaussian noise, for instance in the case of readouts with a low signal-to-noise ratio. These results pave the way for the implementation of quantum error correction with spin qubits in silicon. △ Less

Submitted 19 November, 2019; originally announced November 2019.

Journal ref: Phys. Rev. X 10, 021006 (2020)

Spatial Noise Correlations in a Si/SiGe Two-Qubit Device from Bell State Coherences

Authors: Jelmer M. Boter, Xiao Xue, Tobias S. Krähenmann, Thomas F. Watson, Vickram N. Premakumar, Daniel R. Ward, Donald E. Savage, Max G. Lagally, Mark Friesen, Susan N. Coppersmith, Mark A. Eriksson, Robert Joynt, Lieven M. K. Vandersypen

Abstract: We study spatial noise correlations in a Si/SiGe two-qubit device with integrated micromagnets. Our method relies on the concept of decoherence-free subspaces, whereby we measure the coherence time for two different Bell states, designed to be sensitive only to either correlated or anti-correlated noise respectively. From these measurements, we find weak correlations in low-frequency noise acting… ▽ More We study spatial noise correlations in a Si/SiGe two-qubit device with integrated micromagnets. Our method relies on the concept of decoherence-free subspaces, whereby we measure the coherence time for two different Bell states, designed to be sensitive only to either correlated or anti-correlated noise respectively. From these measurements, we find weak correlations in low-frequency noise acting on the two qubits, while no correlations could be detected in high-frequency noise. A theoretical model and numerical simulations give further insight into the additive effect of multiple independent (anti-)correlated noise sources with an asymmetric effect on the two qubits. Such a scenario is plausible given the data and our understanding of the physics of this system. This work is highly relevant for the design of optimized quantum error correction codes for spin qubits in quantum dot arrays, as well as for optimizing the design of future quantum dot arrays. △ Less

Submitted 6 June, 2019; originally announced June 2019.

Comments: 6+6 pages, 4+3 figures

Journal ref: Phys. Rev. B 101, 235133 (2020)

Benchmarking Gate Fidelities in a Si/SiGe Two-Qubit Device

Authors: X. Xue, T. F. Watson, J. Helsen, D. R. Ward, D. E. Savage, M. G. Lagally, S. N. Coppersmith, M. A. Eriksson, S. Wehner, L. M. K. Vandersypen

Abstract: We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross-talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchmarking and a recently introduced method called character randomized benchmarking, which allows for more reliable estimates of the two-qubit fidelity i… ▽ More We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross-talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchmarking and a recently introduced method called character randomized benchmarking, which allows for more reliable estimates of the two-qubit fidelity in this system. Interestingly, with character randomized benchmarking, the two-qubit CPhase gate fidelity can be obtained by studying the additional decay induced by interleaving the CPhase gate in a reference sequence of single-qubit gates only. This work sets the stage for further improvements in all the relevant gate fidelities in silicon spin qubits beyond the error threshold for fault-tolerant quantum computation. △ Less

Submitted 9 November, 2018; originally announced November 2018.

Comments: 6+5 pages, 6 figures

Journal ref: Phys. Rev. X 9, 021011 (2019)

Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon

Authors: Patrick Harvey-Collard, N. Tobias Jacobson, Chloé Bureau-Oxton, Ryan M. Jock, Vanita Srinivasa, Andrew M. Mounce, Daniel R. Ward, John M. Anderson, Ronald P. Manginell, Joel R. Wendt, Tammy Pluym, Michael P. Lilly, Dwight R. Luhman, Michel Pioro-Ladrière, Malcolm S. Carroll

Abstract: Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the s… ▽ More Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the spins of separated singlet-triplet electron pairs. We observe both intravalley and intervalley mechanisms, each dominant for [110] and [100] magnetic field orientations, respectively, that are consistent with a broken crystal symmetry model. We also observe a third spin-flip mechanism caused by tunneling between the quantum dots. This improved understanding is important for qubit uniformity, spin control and decoherence, and two-qubit gates. △ Less

Submitted 11 June, 2019; v1 submitted 22 August, 2018; originally announced August 2018.

Journal ref: Phys. Rev. Lett. 122, 217702 (2019)

A programmable two-qubit quantum processor in silicon

Authors: T. F. Watson, S. G. J. Philips, E. Kawakami, D. R. Ward, P. Scarlino, M. Veldhorst, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson, L. M. K. Vandersypen

Abstract: With qubit measurement and control fidelities above the threshold of fault-tolerance, much attention is moving towards the daunting task of scaling up the number of physical qubits to the large numbers needed for fault tolerant quantum computing. Here, quantum dot based spin qubits may offer significant advantages due to their potential for high densities, all-electrical operation, and integration… ▽ More With qubit measurement and control fidelities above the threshold of fault-tolerance, much attention is moving towards the daunting task of scaling up the number of physical qubits to the large numbers needed for fault tolerant quantum computing. Here, quantum dot based spin qubits may offer significant advantages due to their potential for high densities, all-electrical operation, and integration onto an industrial platform. In this system, the initialisation, readout, single- and two-qubit gates have been demonstrated in various qubit representations. However, as seen with other small scale quantum computer demonstrations, combining these elements leads to new challenges involving qubit crosstalk, state leakage, calibration, and control hardware which provide invaluable insight towards scaling up. Here we address these challenges and demonstrate a programmable two-qubit quantum processor in silicon by performing both the Deutsch-Josza and the Grover search algorithms. In addition, we characterise the entanglement in our processor through quantum state tomography of Bell states measuring state fidelities between 85-89% and concurrences between 73-80%. These results pave the way for larger scale quantum computers using spins confined to quantum dots. △ Less

Submitted 31 May, 2018; v1 submitted 14 August, 2017; originally announced August 2017.

Probing low noise at the MOS interface with a spin-orbit qubit

Authors: Ryan M. Jock, N. Tobias Jacobson, Patrick Harvey-Collard, Andrew M. Mounce, Vanita Srinivasa, Dan R. Ward, John Anderson, Ron Manginell, Joel R. Wendt, Martin Rudolph, Tammy Pluym, John King Gamble, Andrew D. Baczewski, Wayne M. Witzel, Malcolm S. Carroll

Abstract: The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns hav… ▽ More The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns have been raised about the MOS interface (e.g. trap noise, variations in electron g-factor and practical implementation of multi-QDs). Furthermore, two-axis control of silicon qubits has, to date, required the integration of non-ideal components (e.g. microwave strip-lines, micro-magnets, triple quantum dots, or introduction of donor atoms). In this paper, we introduce a spin-orbit (SO) driven singlet-triplet (ST) qubit in silicon, demonstrating all-electrical two-axis control that requires no additional integrated elements and exhibits charge noise properties equivalent to other more model, but less commercially mature, semiconductor systems. We demonstrate the ability to tune an intrinsic spin-orbit interface effect, which is consistent with Rashba and Dresselhaus contributions that are remarkably strong for a low spin-orbit material such as silicon. The qubit maintains the advantages of using isotopically enriched silicon for producing a quiet magnetic environment, measuring spin dephasing times of 1.6 $μ$s using 99.95% $^{28}$Si epitaxy for the qubit, comparable to results from other isotopically enhanced silicon ST qubit systems. This work, therefore, demonstrates that the interface inherently provides properties for two-axis control, and the technologically important MOS interface does not add additional detrimental qubit noise. △ Less

Submitted 13 July, 2017; originally announced July 2017.

Comments: Submitted July 13, 2017. Supplementary information included with the paper

Journal ref: Nature Communications 9, 1768 (2018)

Quantum dots with split enhancement gate tunnel barrier control

Authors: S. Rochette, M. Rudolph, A. -M. Roy, M. Curry, G. Ten Eyck, R. Manginell, J. Wendt, T. Pluym, S. M. Carr, D. Ward, M. P. Lilly, M. S. Carroll, M. Pioro-Ladrière

Abstract: We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a quantum dot. We demonstrate, in three devices based on two different versions of this elementary structure, that a wide range of tunnel rates is attai… ▽ More We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a quantum dot. We demonstrate, in three devices based on two different versions of this elementary structure, that a wide range of tunnel rates is attainable while maintaining single-electron occupation. A characteristic change in slope of the charge transitions as a function of the reservoir gate voltage, attributed to screening from charges in the reservoir, is observed in all devices, and is expected to play a role in the sizable tuning orthogonality of the split enhancement gate structure. The all-silicon process is expected to minimize strain gradients from electrode thermal mismatch, while the single gate layer should avoid issues related to overlayers (e.g., additional dielectric charge noise) and help improve yield. Finally, reservoir gate control of the tunnel barrier has implications for initialization, manipulation and readout schemes in multi-quantum dot architectures. △ Less

Submitted 5 March, 2019; v1 submitted 12 July, 2017; originally announced July 2017.

Comments: v1: 11 pages, 3 extended data tables, 1 extended data figure, v2: 5 pages, 3 figures, 5 pages supplementary material, 3 extended data tables, 2 extended data figures. Reorganization of the paper structure, modification of the title, abstract and introduction and conclusion, no change to the results and main text figures

Journal ref: Appl. Phys. Lett. 114, 083101 (2019)

Valley dependent anisotropic spin splitting in silicon quantum dots

Authors: Rifat Ferdous, Erika Kawakami, Pasquale Scarlino, Michał P. Nowak, D. R. Ward, D. E. Savage, M. G. Lagally, S. N. Coppersmith, Mark Friesen, Mark A. Eriksson, Lieven M. K. Vandersypen, Rajib Rahman

Abstract: Spin qubits hosted in silicon (Si) quantum dots (QD) are attractive due to their exceptionally long coherence times and compatibility with the silicon transistor platform. To achieve electrical control of spins for qubit scalability, recent experiments have utilized gradient magnetic fields from integrated micro-magnets to produce an extrinsic coupling between spin and charge, thereby electrically… ▽ More Spin qubits hosted in silicon (Si) quantum dots (QD) are attractive due to their exceptionally long coherence times and compatibility with the silicon transistor platform. To achieve electrical control of spins for qubit scalability, recent experiments have utilized gradient magnetic fields from integrated micro-magnets to produce an extrinsic coupling between spin and charge, thereby electrically driving electron spin resonance (ESR). However, spins in silicon QDs experience a complex interplay between spin, charge, and valley degrees of freedom, influenced by the atomic scale details of the confining interface. Here, we report experimental observation of a valley dependent anisotropic spin splitting in a Si QD with an integrated micro-magnet and an external magnetic field. We show by atomistic calculations that the spin-orbit interaction (SOI), which is often ignored in bulk silicon, plays a major role in the measured anisotropy. Moreover, inhomogeneities such as interface steps strongly affect the spin splittings and their valley dependence. This atomic-scale understanding of the intrinsic and extrinsic factors controlling the valley dependent spin properties is a key requirement for successful manipulation of quantum information in Si QDs. △ Less

Submitted 17 August, 2017; v1 submitted 20 February, 2017; originally announced February 2017.

Comments: 9 pages, 5 figures, supplementary (13 pages, 7 figures)

Journal ref: npj Quantum Information 4, 26 (2018)

Effects of charge noise on a pulse-gated singlet-triplet $S-T_-$ qubit

Authors: Zhenyi Qi, X. Wu, D. R. Ward, J. R. Prance, Dohun Kim, John King Gamble, R. T. Mohr, Zhan Shi, D. E. Savage, M. G. Lagally, M. A. Eriksson, Mark Friesen, S. N. Coppersmith, M. G. Vavilov

Abstract: We study the dynamics of a pulse-gated semiconductor double quantum dot qubit. In our experiments, the qubit coherence times are relatively long, but the visibility of the quantum oscillations is low. We show that these observations are consistent with a theory that incorporates decoherence arising from charge noise that gives rise to detuning fluctuations of the double dot. Because effects from c… ▽ More We study the dynamics of a pulse-gated semiconductor double quantum dot qubit. In our experiments, the qubit coherence times are relatively long, but the visibility of the quantum oscillations is low. We show that these observations are consistent with a theory that incorporates decoherence arising from charge noise that gives rise to detuning fluctuations of the double dot. Because effects from charge noise are largest near the singlet-triplet avoided level crossing, the visibility of the oscillations are low when the singlet-triplet avoided level crossing occurs in the vicinity of the charge degeneracy point crossed during the manipulation, but there is only modest dephasing at the large detuning value at which the quantum phase accumulates. This theory agrees well with experimental data and predicts that the visibility can be increased greatly by appropriate tuning of the interdot tunneling rate. △ Less

Submitted 15 June, 2017; v1 submitted 24 January, 2017; originally announced January 2017.

Journal ref: Phys. Rev. B 96, 115305 (2017)

Transport through an impurity tunnel coupled to a Si/SiGe quantum dot

Authors: Ryan H. Foote, Daniel R. Ward, J. R. Prance, John King Gamble, Erik Nielsen, Brandur Thorgrimsson, D. E. Savage, A. L. Saraiva, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here we report the characterization of a quantum dot coupled to a localized electronic state, and we present evidence of controllable coupling between the quantum dot and the localized state. A set of measurem… ▽ More Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here we report the characterization of a quantum dot coupled to a localized electronic state, and we present evidence of controllable coupling between the quantum dot and the localized state. A set of measurements of transport through this device enable the determination of the most likely location of the localized state, consistent with an electronically active impurity in the quantum well near the edge of the quantum dot. The experiments we report are consistent with a gate-voltage controllable tunnel coupling, which is an important building block for hybrid donor and gate-defined quantum dot devices. △ Less

Submitted 12 May, 2015; v1 submitted 8 May, 2015; originally announced May 2015.

Comments: 5 pages, 3 figures

Journal ref: Appl. Phys. Lett. 107, 103112 (2015)

Compressed optimization of device architectures

Authors: Adam Frees, John King Gamble, Daniel R. Ward, Robin Blume-Kohout, M. A. Eriksson, Mark Friesen, S. N. Coppersmith

Abstract: Note: This preprint has been superseded by arXiv:1806.04318. Recent advances in nanotechnology have enabled researchers to control individual quantum mechanical objects with unprecedented accuracy, opening the door for both quantum and extreme-scale conventional computing applications. As these devices become larger and more complex, the ability to design them such that they can be simply contro… ▽ More Note: This preprint has been superseded by arXiv:1806.04318. Recent advances in nanotechnology have enabled researchers to control individual quantum mechanical objects with unprecedented accuracy, opening the door for both quantum and extreme-scale conventional computing applications. As these devices become larger and more complex, the ability to design them such that they can be simply controlled becomes a daunting and computationally infeasible task. Here, motivated by ideas from compressed sensing, we introduce a protocol for the Compressed Optimization of Device Architectures (CODA). It leads naturally to a metric for benchmarking device performance and optimizing device designs, and provides a scheme for automating the control of gate operations and reducing their complexity. Because CODA is computationally efficient, it is readily extensible to large systems. We demonstrate the CODA benchmarking and optimization protocols through simulations of up to eight quantum dots in devices that are currently being developed experimentally for quantum computation. △ Less

Submitted 20 June, 2018; v1 submitted 12 September, 2014; originally announced September 2014.

Comments: Note: This preprint has been superseded by arXiv:1806.04318

Microwave-driven coherent operations of a semiconductor quantum dot charge qubit

Authors: Dohun Kim, D. R. Ward, C. B. Simmons, John King Gamble, Robin Blume-Kohout, Erik Nielsen, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: A most intuitive realization of a qubit is a single electron charge sitting at two well-defined positions, such as the left and right sides of a double quantum dot. This qubit is not just simple but also has the potential for high-speed operation, because of the strong coupling of electric fields to the electron. However, charge noise also couples strongly to this qubit, resulting in rapid dephasi… ▽ More A most intuitive realization of a qubit is a single electron charge sitting at two well-defined positions, such as the left and right sides of a double quantum dot. This qubit is not just simple but also has the potential for high-speed operation, because of the strong coupling of electric fields to the electron. However, charge noise also couples strongly to this qubit, resulting in rapid dephasing at nearly all operating points, with the exception of one special 'sweet spot'. Fast dc voltage pulses have been used to manipulate semiconductor charge qubits, but these previous experiments did not achieve high-fidelity control, because dc gating requires excursions away from the sweet spot. Here, by using resonant ac microwave driving, we achieve coherent manipulation of a semiconductor charge qubit, demonstrating a Rabi frequency of up to 2GHz, a value approaching the intrinsic qubit frequency of 4.5GHz. Z-axis rotations of the qubit are well-protected at the sweet spot, and by using ac gating, we demonstrate the same protection for rotations about arbitrary axes in the X-Y plane of the qubit Bloch sphere. We characterize operations on the qubit using two independent tomographic approaches: standard process tomography and a newly developed method known as gate set tomography. Both approaches show that this qubit can be operated with process fidelities greater than 86% with respect to a universal set of unitary single-qubit operations. △ Less

Submitted 28 July, 2014; originally announced July 2014.

Comments: 9 pages, 5 figures including supplementary information

Journal ref: Nature Nanotechnology 10 243 to 247 (2015)

Coherent Quantum Oscillations in a Silicon Charge Qubit

Authors: Zhan Shi, C. B. Simmons, Daniel. R. Ward, J. R. Prance, R. T. Mohr, Teck Seng Koh, John King Gamble, Xian. Wu, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2* ranges from 127ps to ~2.1ns; it depends substantially on how the energy difference of the two qubit states varies with external voltages, consistent with a decoherence process that is dominated b… ▽ More Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2* ranges from 127ps to ~2.1ns; it depends substantially on how the energy difference of the two qubit states varies with external voltages, consistent with a decoherence process that is dominated by detuning noise(charge noise that changes the asymmetry of the qubit's double-well potential). In the regime with the shortest T2*, applying a charge-echo pulse sequence increases the measured inhomogeneous decoherence time from 127ps to 760ps, demonstrating that low-frequency noise processes are an important dephasing mechanism. △ Less

Submitted 17 July, 2013; v1 submitted 2 August, 2012; originally announced August 2012.

Comments: 5 pages plus 3 page supplemental (8 pages total)

Journal ref: Phys. Rev. B 88, 075416 (2013)