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Isolation of Single Donors in ZnO
Authors:
Ethan R. Hansen,
Vasileios Niaouris,
Bethany E. Matthews,
Christian Zimmermann,
Xingyi Wang,
Roman Kolodka,
Lasse Vines,
Steven R. Spurgeon,
Kai-Mei C. Fu
Abstract:
The shallow donor in zinc oxide (ZnO) is a promising semiconductor spin qubit with optical access. Single indium donors are isolated in a commercial ZnO substrate using plasma focused ion beam (PFIB) milling. Quantum emitters are identified optically by spatial and frequency filtering. The indium donor assignment is based on the optical bound exciton transition energy and magnetic dependence. The…
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The shallow donor in zinc oxide (ZnO) is a promising semiconductor spin qubit with optical access. Single indium donors are isolated in a commercial ZnO substrate using plasma focused ion beam (PFIB) milling. Quantum emitters are identified optically by spatial and frequency filtering. The indium donor assignment is based on the optical bound exciton transition energy and magnetic dependence. The single donor emission is intensity and frequency stable with a transition linewidth less than twice the lifetime limit. The isolation of optically stable single donors post-FIB fabrication is promising for optical device integration required for scalable quantum technologies based on single donors in direct band gap semiconductors.
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Submitted 17 January, 2024; v1 submitted 9 October, 2023;
originally announced October 2023.
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Properties of donor qubits in ZnO formed by indium ion implantation
Authors:
Xingyi Wang,
Christian Zimmermann,
Michael Titze,
Vasileios Niaouris,
Ethan R. Hansen,
Samuel H. D'Ambrosia,
Lasse Vines,
Edward S. Bielejec,
Kai-Mei C. Fu
Abstract:
Shallow neutral donors (D$^{0}$) in ZnO have emerged as a promising candidate for solid-state spin qubits. Here, we report on the formation of D$^{0}$ in ZnO via implantation of In and subsequent annealing. The implanted In donors exhibit optical and spin properties on par with $\textit{in situ}$ doped donors. The inhomogeneous linewidth of the donor-bound exciton transition is less than 10 GHz, c…
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Shallow neutral donors (D$^{0}$) in ZnO have emerged as a promising candidate for solid-state spin qubits. Here, we report on the formation of D$^{0}$ in ZnO via implantation of In and subsequent annealing. The implanted In donors exhibit optical and spin properties on par with $\textit{in situ}$ doped donors. The inhomogeneous linewidth of the donor-bound exciton transition is less than 10 GHz, comparable to the optical linewidth of $\textit{in situ}$ In. Longitudinal spin relaxation times ($T_1$) exceed reported values for $\textit{in situ}$ Ga donors, indicating that residual In implantation damage does not degrade $T_1$. Two laser Raman spectroscopy on the donor spin reveals the hyperfine interaction of the donor electron with the spin-9/2 In nuclei. This work is an important step toward the deterministic formation of In donor qubits in ZnO with optical access to a long-lived nuclear spin memory.
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Submitted 14 June, 2023; v1 submitted 10 December, 2022;
originally announced December 2022.
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Strain modulation of Si vacancy emission from SiC micro- and nanoparticles
Authors:
G. C. Vásquez,
M. E. Bathen,
A. Galeckas,
C. Bazioti,
K. M. Johansen,
D. Maestre,
A. Cremades,
Ø. Prytz,
A. M. Moe,
A. Yu. Kuznetsov,
L. Vines
Abstract:
Single-photon emitting point defects in semiconductors have emerged as strong candidates for future quantum technology devices. In the present work, we exploit crystalline particles to investigate relevant defect localizations, emission shifting and waveguiding. Specifically, emission from 6H-SiC micro- and nanoparticles ranging from 100 nm to 5 $μ$m in size is collected using cathodoluminescence…
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Single-photon emitting point defects in semiconductors have emerged as strong candidates for future quantum technology devices. In the present work, we exploit crystalline particles to investigate relevant defect localizations, emission shifting and waveguiding. Specifically, emission from 6H-SiC micro- and nanoparticles ranging from 100 nm to 5 $μ$m in size is collected using cathodoluminescence (CL), and we monitor signals attributed to the Si vacancy (V$_{\textrm{Si}}$) as a function of its location. Clear shifts in the emission wavelength are found for emitters localized in the particle center and at the edges. By comparing spatial CL maps with strain analysis carried out in transmission electron microscopy, we attribute the emission shifts to compressive strain of 2-3% along the particle a-direction. Thus, embedding V$_{\textrm{Si}}$ qubit defects within SiC nanoparticles offers an interesting and versatile opportunity to tune single-photon emission energies, while simultaneously ensuring ease of addressability via a self-assembled SiC nanoparticle matrix.
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Submitted 5 November, 2020;
originally announced November 2020.
