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Dielectric Loss due to Charged-Defect Acoustic Phonon Emission
Authors:
Mark E. Turiansky,
Chris G. Van de Walle
Abstract:
The coherence times of state-of-the-art superconducting qubits are limited by bulk dielectric loss, yet the microscopic mechanism leading to this loss is unclear. Here we propose that the experimentally observed loss can be attributed to the presence of charged defects that enable the absorption of electromagnetic radiation by the emission of acoustic phonons. Our explicit derivation of the absorp…
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The coherence times of state-of-the-art superconducting qubits are limited by bulk dielectric loss, yet the microscopic mechanism leading to this loss is unclear. Here we propose that the experimentally observed loss can be attributed to the presence of charged defects that enable the absorption of electromagnetic radiation by the emission of acoustic phonons. Our explicit derivation of the absorption coefficient for this mechanism allows us to derive a loss tangent of $7.2 \times 10^{-9}$ for Al$_2$O$_3$, in good agreement with recent high-precision measurements [A. P. Read et al., Phys. Rev. Appl. 19, 034064 (2023)]. We also find that for temperatures well below ~0.2 K, the loss should be independent of temperature, also in agreement with observations. Our investigations show that the loss per defect depends mainly on properties of the host material, and a high-throughput search suggests that diamond, cubic BN, AlN, and SiC are optimal in this respect.
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Submitted 27 February, 2024;
originally announced February 2024.
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Coherent control of a nuclear spin via interactions with a rare-earth ion in the solid-state
Authors:
Mehmet T. Uysal,
Mouktik Raha,
Songtao Chen,
Christopher M. Phenicie,
Salim Ourari,
Mengen Wang,
Chris G. Van de Walle,
Viatcheslav V. Dobrovitski,
Jeff D. Thompson
Abstract:
Individually addressed Er$^{3+}$ ions in solid-state hosts are promising resources for quantum repeaters, because of their direct emission in the telecom band and compatibility with silicon photonic devices. While the Er$^{3+}$ electron spin provides a spin-photon interface, ancilla nuclear spins could enable multi-qubit registers with longer storage times. In this work, we demonstrate coherent co…
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Individually addressed Er$^{3+}$ ions in solid-state hosts are promising resources for quantum repeaters, because of their direct emission in the telecom band and compatibility with silicon photonic devices. While the Er$^{3+}$ electron spin provides a spin-photon interface, ancilla nuclear spins could enable multi-qubit registers with longer storage times. In this work, we demonstrate coherent coupling between the electron spin of a single Er$^{3+}$ ion and a single $I=1/2$ nuclear spin in the solid-state host crystal, which is a fortuitously located proton ($^1$H). We control the nuclear spin using dynamical decoupling sequences applied to the electron spin, implementing one- and two-qubit gate operations. Crucially, the nuclear spin coherence time exceeds the electron coherence time by several orders of magnitude, because of its smaller magnetic moment. These results provide a path towards combining long-lived nuclear spin quantum registers with telecom-wavelength emitters for long-distance quantum repeaters.
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Submitted 12 September, 2022;
originally announced September 2022.
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Probing the Optical Dynamics of Quantum Emitters in Hexagonal Boron Nitride
Authors:
Raj N. Patel,
David A. Hopper,
Jordan A. Gusdorff,
Mark E. Turiansky,
Tzu-Yung Huang,
Rebecca E. K. Fishman,
Benjamin Porat,
Chris G. Van de Walle,
Lee C. Bassett
Abstract:
Hexagonal boron nitride is a van der Waals material that hosts visible-wavelength quantum emitters at room temperature. However, experimental identification of the quantum emitters' electronic structure is lacking, and key details of their charge and spin properties remain unknown. Here, we probe the optical dynamics of quantum emitters in hexagonal boron nitride using photon emission correlation…
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Hexagonal boron nitride is a van der Waals material that hosts visible-wavelength quantum emitters at room temperature. However, experimental identification of the quantum emitters' electronic structure is lacking, and key details of their charge and spin properties remain unknown. Here, we probe the optical dynamics of quantum emitters in hexagonal boron nitride using photon emission correlation spectroscopy. Several quantum emitters exhibit ideal single-photon emission with noise-limited photon antibunching, $g^{(2)}(0)=0$. The photoluminescence emission lineshapes are consistent with individual vibronic transitions. However, polarization-resolved excitation and emission suggests the role of multiple optical transitions, and photon emission correlation spectroscopy reveals complicated optical dynamics associated with excitation and relaxation through multiple electronic excited states. We compare the experimental results to quantitative optical dynamics simulations, develop electronic structure models that are consistent with the observations, and discuss the results in the context of ab initio theoretical calculations.
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Submitted 21 January, 2022;
originally announced January 2022.
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Vibrational and vibronic structure of isolated point defects: the nitrogen-vacancy center in diamond
Authors:
Lukas Razinkovas,
Marcus W. Doherty,
Neil B. Manson,
Chris G. Van de Walle,
Audrius Alkauskas
Abstract:
We present a theoretical study of vibrational and vibronic properties of a point defect in the dilute limit by means of first-principles density functional theory calculations. As an exemplar we choose the negatively charged nitrogen-vacancy center, a solid-state system that has served as a testbed for many protocols of quantum technology. We achieve low effective concentrations of defects by cons…
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We present a theoretical study of vibrational and vibronic properties of a point defect in the dilute limit by means of first-principles density functional theory calculations. As an exemplar we choose the negatively charged nitrogen-vacancy center, a solid-state system that has served as a testbed for many protocols of quantum technology. We achieve low effective concentrations of defects by constructing dynamical matrices of large supercells containing tens of thousands of atoms. The main goal of the paper is to calculate luminescence and absorption lineshapes due to coupling to vibrational degrees of freedom. The coupling to symmetric $a_1$ modes is computed via the Huang-Rhys theory. Importantly, to include a nontrivial contribution of $e$ modes we develop an effective methodology to solve the multi-mode $E \otimes e$ Jahn-Teller problem. Our results show that for NV centers in diamond a proper treatment of $e$ modes is particularly important for absorption. We obtain good agreement with experiment for both luminescence and absorption. Finally, the remaining shortcomings of the theoretical approach are critically reviewed. The presented theoretical approach will benefit identification and future studies of point defects in solids.
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Submitted 6 August, 2021; v1 submitted 8 December, 2020;
originally announced December 2020.
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Linear hyperfine tuning of donor spins in silicon using hydrostatic strain
Authors:
John Mansir,
Pierandrea Conti,
Zai** Zeng,
Jarryd J. Pla,
Patrice Bertet,
Michael W. Swift,
Chris G. Van de Walle,
Mike L. W. Thewalt,
Benoit Sklenard,
Yann-Michel Niquet,
John J. L. Morton
Abstract:
We experimentally study the coupling of Group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts which are linear in strain, in contrast to the quadratic dependence predicted by the valley repopulation model (VRM), and therefore orders of magnitude greater than that predicted by the VRM for small strains $|\varepsilon| < 10^{-5}$. Through both tight-binding…
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We experimentally study the coupling of Group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts which are linear in strain, in contrast to the quadratic dependence predicted by the valley repopulation model (VRM), and therefore orders of magnitude greater than that predicted by the VRM for small strains $|\varepsilon| < 10^{-5}$. Through both tight-binding and first principles calculations we find that these shifts arise from a linear tuning of the donor hyperfine interaction term by the hydrostatic component of strain and achieve semi-quantitative agreement with the experimental values. Our results provide a framework for making quantitative predictions of donor spins in silicon nanostructures, such as those being used to develop silicon-based quantum processors and memories. The strong spin-strain coupling we measure (up to 150~GHz per strain, for Bi-donors in Si), offers a method for donor spin tuning --- shifting Bi donor electron spins by over a linewidth with a hydrostatic strain of order $10^{-6}$ --- as well as opportunities for coupling to mechanical resonators.
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Submitted 23 March, 2018; v1 submitted 2 October, 2017;
originally announced October 2017.
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Measurement and Control of Single Nitrogen-Vacancy Center Spins above 600 K
Authors:
D. M. Toyli,
D. J. Christle,
A. Alkauskas,
B. B. Buckley,
C. G. Van de Walle,
D. D. Awschalom
Abstract:
We study the spin and orbital dynamics of single nitrogen-vacancy (NV) centers in diamond between room temperature and 700 K. We find that the ability to optically address and coherently control single spins above room temperature is limited by nonradiative processes that quench the NV center's fluorescence-based spin readout between 550 and 700 K. Combined with electronic structure calculations,…
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We study the spin and orbital dynamics of single nitrogen-vacancy (NV) centers in diamond between room temperature and 700 K. We find that the ability to optically address and coherently control single spins above room temperature is limited by nonradiative processes that quench the NV center's fluorescence-based spin readout between 550 and 700 K. Combined with electronic structure calculations, our measurements indicate that the energy difference between the 3E and 1A1 electronic states is approximately 0.8 eV. We also demonstrate that the inhomogeneous spin lifetime (T2*) is temperature independent up to at least 625 K, suggesting that single NV centers could be applied as nanoscale thermometers over a broad temperature range.
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Submitted 16 July, 2012; v1 submitted 20 January, 2012;
originally announced January 2012.
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Quantum computing with defects
Authors:
J. R. Weber,
W. F. Koehl,
J. B. Varley,
A. Janotti,
B. B. Buckley,
C. G. Van de Walle,
D. D. Awschalom
Abstract:
Identifying and designing physical systems for use as qubits, the basic units of quantum information, are critical steps in the development of a quantum computer. Among the possibilities in the solid state, a defect in diamond known as the nitrogen-vacancy (NV-1) center stands out for its robustness - its quantum state can be initialized, manipulated, and measured with high fidelity at room temper…
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Identifying and designing physical systems for use as qubits, the basic units of quantum information, are critical steps in the development of a quantum computer. Among the possibilities in the solid state, a defect in diamond known as the nitrogen-vacancy (NV-1) center stands out for its robustness - its quantum state can be initialized, manipulated, and measured with high fidelity at room temperature. Here we describe how to systematically identify other deep center defects with similar quantum-mechanical properties. We present a list of physical criteria that these centers and their hosts should meet and explain how these requirements can be used in conjunction with electronic structure theory to intelligently sort through candidate defect systems. To illustrate these points in detail, we compare electronic structure calculations of the NV-1 center in diamond with those of several deep centers in 4H silicon carbide (SiC). We then discuss the proposed criteria for similar defects in other tetrahedrally-coordinated semiconductors.
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Submitted 8 March, 2010;
originally announced March 2010.
