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Ultrafast optical spin echo for electron spins in semiconductors
Authors:
Susan M. Clark,
Kai-Mei C. Fu,
Qiang Zhang,
Thaddeus D. Ladd,
Colin Stanley,
Yoshihisa Yamamoto
Abstract:
Spin-based quantum computing and magnetic resonance techniques rely on the ability to measure the coherence time, T2, of a spin system. We report on the experimental implementation of all-optical spin echo to determine the T2 time of a semiconductor electron-spin system. We use three ultrafast optical pulses to rotate spins an arbitrary angle and measure an echo signal as the time between pulses…
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Spin-based quantum computing and magnetic resonance techniques rely on the ability to measure the coherence time, T2, of a spin system. We report on the experimental implementation of all-optical spin echo to determine the T2 time of a semiconductor electron-spin system. We use three ultrafast optical pulses to rotate spins an arbitrary angle and measure an echo signal as the time between pulses is lengthened. Unlike previous spin-echo techniques using microwaves, ultrafast optical pulses allow clean T2 measurements of systems with dephasing times T2* fast in comparison to the timescale for microwave control. This demonstration provides a step toward ultrafast optical dynamic decoupling of spin-based qubits.
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Submitted 3 April, 2009;
originally announced April 2009.
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Ultrafast control of donor-bound electron spins with single detuned optical pulses
Authors:
Kai-Mei C. Fu,
Susan M. Clark,
Charles Santori,
M. C. Holland,
Colin R. Stanley,
Yoshihisa Yamamoto
Abstract:
The ability to control spins in semiconductors is important in a variety of fields including spintronics and quantum information processing. Due to the potentially fast dephasing times of spins in the solid state [1-3], spin control operating on the picosecond or faster timescale may be necessary. Such speeds, which are not possible to attain with standard electron spin resonance (ESR) technique…
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The ability to control spins in semiconductors is important in a variety of fields including spintronics and quantum information processing. Due to the potentially fast dephasing times of spins in the solid state [1-3], spin control operating on the picosecond or faster timescale may be necessary. Such speeds, which are not possible to attain with standard electron spin resonance (ESR) techniques based on microwave sources, can be attained with broadband optical pulses. One promising ultrafast technique utilizes single broadband pulses detuned from resonance in a three-level Lambda system [4]. This attractive technique is robust against optical pulse imperfections and does not require a fixed optical reference phase. Here we demonstrate the principle of coherent manipulation of spins theoretically and experimentally. Using this technique, donor-bound electron spin rotations with single-pulse areas exceeding pi/4 and two-pulses areas exceeding pi/2 are demonstrated. We believe the maximum pulse areas attained do not reflect a fundamental limit of the technique and larger pulse areas could be achieved in other material systems. This technique has applications from basic solid-state ESR spectroscopy to arbitrary single-qubit rotations [4, 5] and bang-bang control[6] for quantum computation.
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Submitted 25 June, 2008;
originally announced June 2008.
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Coherent Population Trap** of Electron Spins in a Semiconductor
Authors:
Kai-Mei C. Fu,
Charles Santori,
Colin Stanley,
M. C. Holland,
Yoshihisa Yamamoto
Abstract:
In high-purity n-type GaAs under strong magnetic field, we are able to isolate a lambda system composed of two Zeeman states of neutral-donor bound electrons and the lowest Zeeman state of bound excitons. When the two-photon detuning of this system is zero, we observe a pronounced dip in the excited-state photoluminescence indicating the creation of the coherent population-trapped state. Our dat…
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In high-purity n-type GaAs under strong magnetic field, we are able to isolate a lambda system composed of two Zeeman states of neutral-donor bound electrons and the lowest Zeeman state of bound excitons. When the two-photon detuning of this system is zero, we observe a pronounced dip in the excited-state photoluminescence indicating the creation of the coherent population-trapped state. Our data are consistent with a steady-state three-level density-matrix model. The observation of coherent population trap** in GaAs indicates that this and similar semiconductor systems could be used for various EIT-type experiments.
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Submitted 25 June, 2007; v1 submitted 31 March, 2005;
originally announced April 2005.
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Terahertz-induced depletion of the ground-state population of neutral donors in GaAs measured by resonant elastic light scattering from donor-bound excitons
Authors:
D. G. Allen,
C. R. Stanley,
M. S. Sherwin
Abstract:
Strong resonant elastic light scattering (RELS) from the donor-bound exciton transition in GaAs (1.514eV) occurs at neutral donors in the ground (1S) state, but not at neutral donors in excited hydrogenic states. When 1.6 THz radiation is incident on an ensemble of neutral donors, we observe up to a 30% decrease in the RELS, corresponding to a decrease in the population of neutral donors in thei…
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Strong resonant elastic light scattering (RELS) from the donor-bound exciton transition in GaAs (1.514eV) occurs at neutral donors in the ground (1S) state, but not at neutral donors in excited hydrogenic states. When 1.6 THz radiation is incident on an ensemble of neutral donors, we observe up to a 30% decrease in the RELS, corresponding to a decrease in the population of neutral donors in their ground states. This optical detection method is similar to quantum nondemolition measurement techniques used for readout of ion trap quantum computers and diamond nitrogen-vacancy centers. In this scheme, Auger recombination of the bound exciton, which changes the state of the donor during measurement, limits the measurement fidelity and maximum NIR excitation intensity.
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Submitted 4 March, 2005;
originally announced March 2005.
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Verification of polarization selection rules and implementation of selective coherent manipulations of hydrogenic transitions in n-GaAs
Authors:
M. F. Doty,
B. T. King,
M. S. Sherwin,
C. R. Stanley
Abstract:
Electrons bound to shallow donors in GaAs have orbital energy levels analogous to those of the hydrogen atom. The polarization selection rules for optical transitions between the states analogous to the 1s and 2p states of hydrogen in a magnetic field are verified using Terahertz (THz) radiation from the UCSB Free Electron Laser. A polarization-selective coherent manipulation of the quantum stat…
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Electrons bound to shallow donors in GaAs have orbital energy levels analogous to those of the hydrogen atom. The polarization selection rules for optical transitions between the states analogous to the 1s and 2p states of hydrogen in a magnetic field are verified using Terahertz (THz) radiation from the UCSB Free Electron Laser. A polarization-selective coherent manipulation of the quantum states is demonstrated and the relevance to quantum information processing schemes is discussed.
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Submitted 7 April, 2005; v1 submitted 23 September, 2004;
originally announced September 2004.
