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Cavity-mediated entanglement of parametrically driven spin qubits via sidebands
Authors:
V. Srinivasa,
J. M. Taylor,
J. R. Petta
Abstract:
We consider a pair of quantum dot-based spin qubits that interact via microwave photons in a superconducting cavity, and that are also parametrically driven by separate external electric fields. For this system, we formulate a model for spin qubit entanglement in the presence of mutually off-resonant qubit and cavity frequencies. We show that the sidebands generated via the driving fields enable h…
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We consider a pair of quantum dot-based spin qubits that interact via microwave photons in a superconducting cavity, and that are also parametrically driven by separate external electric fields. For this system, we formulate a model for spin qubit entanglement in the presence of mutually off-resonant qubit and cavity frequencies. We show that the sidebands generated via the driving fields enable highly tunable qubit-qubit entanglement using only ac control and without requiring the qubit and cavity frequencies to be tuned into simultaneous resonance. The model we derive can be mapped to a variety of qubit types, including detuning-driven one-electron spin qubits in double quantum dots and three-electron resonant exchange qubits in triple quantum dots. The high degree of nonlinearity inherent in spin qubits renders these systems particularly favorable for parametric drive-activated entanglement. We determine multiple common resonance conditions for the two driven qubits and the cavity and identify experimentally relevant parameter regimes that enable the implementation of entangling gates with suppressed sensitivity to cavity photon occupation and decay. The parametrically driven sideband resonance approach we describe provides a promising route toward scalability and modularity in spin-based quantum information processing through drive-enabled tunability that can also be implemented in micromagnet-free electron and hole systems for spin-photon coupling.
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Submitted 12 July, 2023;
originally announced July 2023.
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Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon
Authors:
Patrick Harvey-Collard,
N. Tobias Jacobson,
Chloé Bureau-Oxton,
Ryan M. Jock,
Vanita Srinivasa,
Andrew M. Mounce,
Daniel R. Ward,
John M. Anderson,
Ronald P. Manginell,
Joel R. Wendt,
Tammy Pluym,
Michael P. Lilly,
Dwight R. Luhman,
Michel Pioro-Ladrière,
Malcolm S. Carroll
Abstract:
Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the s…
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Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the spins of separated singlet-triplet electron pairs. We observe both intravalley and intervalley mechanisms, each dominant for [110] and [100] magnetic field orientations, respectively, that are consistent with a broken crystal symmetry model. We also observe a third spin-flip mechanism caused by tunneling between the quantum dots. This improved understanding is important for qubit uniformity, spin control and decoherence, and two-qubit gates.
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Submitted 11 June, 2019; v1 submitted 22 August, 2018;
originally announced August 2018.
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Probing low noise at the MOS interface with a spin-orbit qubit
Authors:
Ryan M. Jock,
N. Tobias Jacobson,
Patrick Harvey-Collard,
Andrew M. Mounce,
Vanita Srinivasa,
Dan R. Ward,
John Anderson,
Ron Manginell,
Joel R. Wendt,
Martin Rudolph,
Tammy Pluym,
John King Gamble,
Andrew D. Baczewski,
Wayne M. Witzel,
Malcolm S. Carroll
Abstract:
The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns hav…
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The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers predict the need for an integrated platform in order to implement useful computation, and decades of advancements in silicon microelectronics fabrication lends itself to this challenge. However, fundamental concerns have been raised about the MOS interface (e.g. trap noise, variations in electron g-factor and practical implementation of multi-QDs). Furthermore, two-axis control of silicon qubits has, to date, required the integration of non-ideal components (e.g. microwave strip-lines, micro-magnets, triple quantum dots, or introduction of donor atoms). In this paper, we introduce a spin-orbit (SO) driven singlet-triplet (ST) qubit in silicon, demonstrating all-electrical two-axis control that requires no additional integrated elements and exhibits charge noise properties equivalent to other more model, but less commercially mature, semiconductor systems. We demonstrate the ability to tune an intrinsic spin-orbit interface effect, which is consistent with Rashba and Dresselhaus contributions that are remarkably strong for a low spin-orbit material such as silicon. The qubit maintains the advantages of using isotopically enriched silicon for producing a quiet magnetic environment, measuring spin dephasing times of 1.6 $μ$s using 99.95% $^{28}$Si epitaxy for the qubit, comparable to results from other isotopically enhanced silicon ST qubit systems. This work, therefore, demonstrates that the interface inherently provides properties for two-axis control, and the technologically important MOS interface does not add additional detrimental qubit noise.
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Submitted 13 July, 2017;
originally announced July 2017.
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Entangling distant resonant exchange qubits via circuit quantum electrodynamics
Authors:
V. Srinivasa,
J. M. Taylor,
C. Tahan
Abstract:
We investigate a hybrid quantum system consisting of spatially separated resonant exchange qubits, defined in three-electron semiconductor triple quantum dots, that are coupled via a superconducting transmission line resonator. Drawing on methods from circuit quantum electrodynamics and Hartmann-Hahn double resonance techniques, we analyze three specific approaches for implementing resonator-media…
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We investigate a hybrid quantum system consisting of spatially separated resonant exchange qubits, defined in three-electron semiconductor triple quantum dots, that are coupled via a superconducting transmission line resonator. Drawing on methods from circuit quantum electrodynamics and Hartmann-Hahn double resonance techniques, we analyze three specific approaches for implementing resonator-mediated two-qubit entangling gates in both dispersive and resonant regimes of interaction. We calculate entangling gate fidelities as well as the rate of relaxation via phonons for resonant exchange qubits in silicon triple dots and show that such an implementation is particularly well-suited to achieving the strong coupling regime. Our approach combines the favorable coherence properties of encoded spin qubits in silicon with the rapid and robust long-range entanglement provided by circuit QED systems.
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Submitted 15 March, 2016;
originally announced March 2016.
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Electrically-protected resonant exchange qubits in triple quantum dots
Authors:
J. M. Taylor,
V. Srinivasa,
J. Medford
Abstract:
We present a modulated microwave approach for quantum computing with qubits comprising three spins in a triple quantum dot. This approach includes single- and two-qubit gates that are protected against low-frequency electrical noise, due to an operating point with a narrowband response to high frequency electric fields. Furthermore, existing double quantum dot advances, including robust preparatio…
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We present a modulated microwave approach for quantum computing with qubits comprising three spins in a triple quantum dot. This approach includes single- and two-qubit gates that are protected against low-frequency electrical noise, due to an operating point with a narrowband response to high frequency electric fields. Furthermore, existing double quantum dot advances, including robust preparation and measurement via spin-to-charge conversion, are immediately applicable to the new qubit. Finally, the electric dipole terms implicit in the high frequency coupling enable strong coupling with superconducting microwave resonators, leading to more robust two-qubit gates.
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Submitted 12 April, 2013; v1 submitted 11 April, 2013;
originally announced April 2013.
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Simultaneous Spin-Charge Relaxation in Double Quantum Dots
Authors:
V. Srinivasa,
K. C. Nowack,
M. Shafiei,
L. M. K. Vandersypen,
J. M. Taylor
Abstract:
We investigate phonon-induced spin and charge relaxation mediated by spin-orbit and hyperfine interactions for a single electron confined within a double quantum dot. A simple toy model incorporating both direct decay to the ground state of the double dot and indirect decay via an intermediate excited state yields an electron spin relaxation rate that varies non-monotonically with the detuning bet…
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We investigate phonon-induced spin and charge relaxation mediated by spin-orbit and hyperfine interactions for a single electron confined within a double quantum dot. A simple toy model incorporating both direct decay to the ground state of the double dot and indirect decay via an intermediate excited state yields an electron spin relaxation rate that varies non-monotonically with the detuning between the dots. We confirm this model with experiments performed on a GaAs double dot, demonstrating that the relaxation rate exhibits the expected detuning dependence and can be electrically tuned over several orders of magnitude. Our analysis suggests that spin-orbit mediated relaxation via phonons serves as the dominant mechanism through which the double-dot electron spin-flip rate varies with detuning.
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Submitted 7 March, 2013;
originally announced March 2013.
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Spatial Analogue of Quantum Spin Dynamics via Spin-Orbit Interaction
Authors:
Vanita Srinivasa,
Jeremy Levy
Abstract:
We map electron spin dynamics from time to space in quantum wires with spatially uniform and oscillating Rashba spin-orbit coupling. The presence of the spin-orbit interaction introduces pseudo-Zeeman couplings of the electron spins to effective magnetic fields. We show that by periodically modulating the spin-orbit coupling along the quantum wire axis, it is possible to create the spatial analogu…
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We map electron spin dynamics from time to space in quantum wires with spatially uniform and oscillating Rashba spin-orbit coupling. The presence of the spin-orbit interaction introduces pseudo-Zeeman couplings of the electron spins to effective magnetic fields. We show that by periodically modulating the spin-orbit coupling along the quantum wire axis, it is possible to create the spatial analogue of spin resonance, without the need for any real magnetic fields. The map** of time-dependent operations onto a spatial axis suggests a new mode for quantum information processing in which gate operations are encoded into the band structure of the material. We describe a realization of such materials within nanowires at the interface of LaAlO3/SrTiO3 heterostructures.
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Submitted 22 November, 2011;
originally announced November 2011.
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Tailoring Effective Exchange Interactions via Domain Walls in Coupled Heisenberg Rings
Authors:
Vanita Srinivasa,
Jeremy Levy
Abstract:
The nature of the exchange coupling variation in an antiferromagnetic spin-1/2 system can be used to tailor its ground-state properties. In particular, dimerized Heisenberg rings containing domain walls have localized states which can serve as "flying spin qubits" when the domain walls are moved. We show theoretically that, when two of these rings are coupled, the movement of the domain walls le…
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The nature of the exchange coupling variation in an antiferromagnetic spin-1/2 system can be used to tailor its ground-state properties. In particular, dimerized Heisenberg rings containing domain walls have localized states which can serve as "flying spin qubits" when the domain walls are moved. We show theoretically that, when two of these rings are coupled, the movement of the domain walls leads to modulation of the effective exchange interaction between the qubits. Appropriately chosen configurations of domain walls can give rise to ferromagnetic effective exchange. We describe how these spin rings may be used as basic building blocks to construct quantum spin systems whose properties are tunable by virtue of the exchange variation within the rings.
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Submitted 17 April, 2009;
originally announced April 2009.
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Flying Spin Qubits
Authors:
Vanita Srinivasa,
Jeremy Levy,
C. Stephen Hellberg
Abstract:
We present a method for encoding and transporting qubits within a dimerized Heisenberg spin-1/2 chain. Logical qubits are localized at the domain walls that separate the two possible dimerized states. The domain walls can be moved to produce "flying spin qubits". The topological nature of these states makes them stable against a wide class of perturbations. Pairs of domain walls can be used to g…
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We present a method for encoding and transporting qubits within a dimerized Heisenberg spin-1/2 chain. Logical qubits are localized at the domain walls that separate the two possible dimerized states. The domain walls can be moved to produce "flying spin qubits". The topological nature of these states makes them stable against a wide class of perturbations. Pairs of domain walls can be used to generate Einstein-Podolsky-Rosen pairs of entangled qubits. We discuss speed limitations within an exactly solvable three-spin model and describe a possible physical realization using quantum dot arrays.
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Submitted 23 December, 2006; v1 submitted 9 June, 2006;
originally announced June 2006.
