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High-fidelity remote entanglement of trapped atoms mediated by time-bin photons
Authors:
Sagnik Saha,
Mikhail Shalaev,
Jameson O'Reilly,
Isabella Goetting,
George Toh,
Ashish Kalakuntla,
Yichao Yu,
Christopher Monroe
Abstract:
Photonic interconnects between quantum processing nodes are likely the only way to achieve large-scale quantum computers and networks. The bottleneck in such an architecture is the interface between well-isolated quantum memories and flying photons. We establish high-fidelity entanglement between remotely separated trapped atomic qubit memories, mediated by photonic qubits stored in the timing of…
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Photonic interconnects between quantum processing nodes are likely the only way to achieve large-scale quantum computers and networks. The bottleneck in such an architecture is the interface between well-isolated quantum memories and flying photons. We establish high-fidelity entanglement between remotely separated trapped atomic qubit memories, mediated by photonic qubits stored in the timing of their pulses. Such time-bin encoding removes sensitivity to polarization errors, enables long-distance quantum communication, and is extensible to quantum memories with more than two states. Using a measurement-based error detection process and suppressing a fundamental source of error due to atomic recoil, we achieve an entanglement fidelity of 97% and show that fidelities beyond 99.9% are feasible.
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Submitted 3 June, 2024;
originally announced June 2024.
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Site-Controlled Purcell-Induced Bright Single Photon Emitters in Hexagonal Boron Nitride
Authors:
Mashnoon Alam Sakib,
Brandon Triplett,
William Harris,
Naveed Hussain,
Alexander Senichev,
Melika Momenzadeh,
Joshua Bocanegra,
Ruqian Wu,
Alexandra Boltasseva,
Vladimir M. Shalaev,
Maxim R. Shcherbakov
Abstract:
Single photon emitters (SPEs) hosted in hexagonal boron nitride (hBN) are essential elementary building blocks for enabling future on-chip quantum photonic technologies that operate at room temperature. However, fundamental challenges, such as managing non-radiative decay, competing incoherent processes, as well as engineering difficulties in achieving deterministic placement and scaling of the em…
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Single photon emitters (SPEs) hosted in hexagonal boron nitride (hBN) are essential elementary building blocks for enabling future on-chip quantum photonic technologies that operate at room temperature. However, fundamental challenges, such as managing non-radiative decay, competing incoherent processes, as well as engineering difficulties in achieving deterministic placement and scaling of the emitters, limit their full potential. In this work, we experimentally demonstrate large-area arrays of plasmonic nanoresonators for Purcell-induced site-controlled SPEs by engineering emitter-cavity coupling and enhancing radiative emission at room temperature. The plasmonic nanoresonator architecture consists of gold-coated silicon pillars capped with an alumina spacer layer, enabling a 10-fold local field enhancement in the emission band of native hBN defects. Confocal photoluminescence and second-order autocorrelation measurements show bright SPEs with sub-30 meV bandwidth and a saturated emission rate of more than 3.8 million counts per second. We measure a Purcell factor of 4.9, enabling average SPE lifetimes of 480 ps, a five-fold reduction as compared to emission from gold-free devices, along with an overall SPE yield of 21%. Density functional theory calculations further reveal the beneficial role of an alumina spacer between defected hBN and gold, as an insulating layer can mitigate the electronic broadening of emission from defects proximal to gold. Our results offer arrays of bright, heterogeneously integrated quantum light sources, paving the way for robust and scalable quantum information systems.
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Submitted 3 May, 2024;
originally announced May 2024.
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Fast photon-mediated entanglement of continuously-cooled trapped ions for quantum networking
Authors:
Jameson O'Reilly,
George Toh,
Isabella Goetting,
Sagnik Saha,
Mikhail Shalaev,
Allison Carter,
Andrew Risinger,
Ashish Kalakuntla,
Tingguang Li,
Ashrit Verma,
Christopher Monroe
Abstract:
We entangle two co-trapped atomic barium ion qubits by collecting single visible photons from each ion through in-vacuo 0.8 NA objectives, interfering them through an integrated fiber-beamsplitter and detecting them in coincidence. This projects the qubits into an entangled Bell state with an observed fidelity lower bound of F > 94%. We also introduce an ytterbium ion for sympathetic cooling to re…
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We entangle two co-trapped atomic barium ion qubits by collecting single visible photons from each ion through in-vacuo 0.8 NA objectives, interfering them through an integrated fiber-beamsplitter and detecting them in coincidence. This projects the qubits into an entangled Bell state with an observed fidelity lower bound of F > 94%. We also introduce an ytterbium ion for sympathetic cooling to remove the need for recooling interruptions and achieve a continuous entanglement rate of 250 1/s.
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Submitted 2 July, 2024; v1 submitted 24 April, 2024;
originally announced April 2024.
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Quantum Emitters in Aluminum Nitride Induced by Zirconium Ion Implantation
Authors:
Alexander Senichev,
Zachariah O. Martin,
Yongqiang Wang,
Owen M. Matthiessen,
Alexei Lagutchev,
Han Htoon,
Alexandra Boltasseva,
Vladimir M. Shalaev
Abstract:
The integration of solid-state single-photon sources with foundry-compatible photonic platforms is crucial for practical and scalable quantum photonic applications. This study investigates aluminum nitride (AlN) as a material with properties highly suitable for integrated on-chip photonics specifically due to AlN capacity to host defect-center related single-photon emitters. We conduct a comprehen…
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The integration of solid-state single-photon sources with foundry-compatible photonic platforms is crucial for practical and scalable quantum photonic applications. This study investigates aluminum nitride (AlN) as a material with properties highly suitable for integrated on-chip photonics specifically due to AlN capacity to host defect-center related single-photon emitters. We conduct a comprehensive study of the creation and photophysical properties of single-photon emitters in AlN utilizing Zirconium (Zr) and Krypton (Kr) heavy ion implantation and thermal annealing techniques. Guided by theoretical predictions, we assess the potential of Zr ions to create optically addressable spin-defects and employ Kr ions as an alternative approach that targets lattice defects without inducing chemical do** effects. With the 532 nm excitation wavelength, we found that single-photon emitters induced by ion implantation are primarily associated with vacancy-type defects in the AlN lattice for both Zr and Kr ions. The emitter density increases with the ion fluence, and there is an optimal value for the high density of emitters with low AlN background fluorescence. Additionally, under shorter excitation wavelength of 405 nm, Zr-implanted AlN exhibits isolated point-like emitters, which can be related to Zr-based defect complexes. This study provides important insights into the formation and properties of single-photon emitters in aluminum nitride induced by heavy ion implantation, contributing to the advancement of the aluminum nitride platform for on-chip quantum photonic applications.
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Submitted 25 January, 2024;
originally announced January 2024.
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All-optical modulation with single-photons using electron avalanche
Authors:
Demid V. Sychev,
Peigang Chen,
Morris Yang,
Colton Fruhling,
Alexei Lagutchev,
Alexander V. Kildishev,
Alexandra Boltasseva,
Vladimir M. Shalaev
Abstract:
The distinctive characteristics of light such as high-speed propagation, low-loss, low cross-talk and power consumption as well as quantum properties, make it uniquely suitable for various critical applications in communication, high-resolution imaging, optical computing, and emerging quantum information technologies. One limiting factor though is the weak optical nonlinearity of conventional medi…
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The distinctive characteristics of light such as high-speed propagation, low-loss, low cross-talk and power consumption as well as quantum properties, make it uniquely suitable for various critical applications in communication, high-resolution imaging, optical computing, and emerging quantum information technologies. One limiting factor though is the weak optical nonlinearity of conventional media that poses challenges for the control and manipulation of light, especially with ultra-low, few-photon-level intensities. Notably, creating a photonic transistor working at single-photon intensities remains an outstanding challenge. In this work, we demonstrate all-optical modulation using a beam with single-photon intensity. Such low-energy control is enabled by the electron avalanche process in a semiconductor triggered by the impact ionization of charge carriers. This corresponds to achieving a nonlinear refractive index of n2~7*10^-3m^2/W, which is two orders of magnitude higher than in the best nonlinear optical media (Table S1). Our approach opens up the possibility of terahertz-speed optical switching at the single-photon level, which could enable novel photonic devices and future quantum photonic information processing and computing, fast logic gates, and beyond. Importantly, this approach could lead to industry-ready CMOS-compatible and chip-integrated optical modulation platforms operating with single photons.
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Submitted 18 December, 2023;
originally announced December 2023.
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Ion Trap with In-Vacuum High Numerical Aperture Imaging for a Dual-Species Modular Quantum Computer
Authors:
Allison L. Carter,
Jameson O'Reilly,
George Toh,
Sagnik Saha,
Mikhail Shalaev,
Isabella Goetting,
Christopher Monroe
Abstract:
Photonic interconnects between quantum systems will play a central role in both scalable quantum computing and quantum networking. Entanglement of remote qubits via photons has been demonstrated in many platforms; however, improving the rate of entanglement generation will be instrumental for integrating photonic links into modular quantum computers. We present an ion trap system that has the high…
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Photonic interconnects between quantum systems will play a central role in both scalable quantum computing and quantum networking. Entanglement of remote qubits via photons has been demonstrated in many platforms; however, improving the rate of entanglement generation will be instrumental for integrating photonic links into modular quantum computers. We present an ion trap system that has the highest reported free-space photon collection efficiency for quantum networking. We use a pair of in-vacuum aspheric lenses, each with a numerical aperture of 0.8, to couple 10% of the 493 nm photons emitted from a $^{138}$Ba$^+$ ion into single-mode fibers. We also demonstrate that proximal effects of the lenses on the ion position and motion can be mitigated.
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Submitted 26 March, 2024; v1 submitted 10 October, 2023;
originally announced October 2023.
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Photophysics of Intrinsic Single-Photon Emitters in Silicon Nitride at Low Temperatures
Authors:
Zachariah O. Martin,
Alexander Senichev,
Samuel Peana,
Benjamin J. Lawrie,
Alexei S. Lagutchev,
Alexandra Boltasseva,
Vladimir M. Shalaev
Abstract:
A robust process for fabricating intrinsic single-photon emitters in silicon nitride has been recently established. These emitters show promise for quantum applications due to room-temperature operation and monolithic integration with the technologically mature silicon nitride photonics platform. Here, the fundamental photophysical properties of these emitters are probed through measurements of op…
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A robust process for fabricating intrinsic single-photon emitters in silicon nitride has been recently established. These emitters show promise for quantum applications due to room-temperature operation and monolithic integration with the technologically mature silicon nitride photonics platform. Here, the fundamental photophysical properties of these emitters are probed through measurements of optical transition wavelengths, linewidths, and photon antibunching as a function of temperature from 4.2K to 300K. Important insight into the potential for lifetime-limited linewidths is provided through measurements of inhomogeneous and temperature-dependent homogeneous broadening of the zero-phonon lines. At 4.2K, spectral diffusion was found to be the main broadening mechanism, while time-resolved spectroscopy measurements revealed homogeneously broadened zero-phonon lines with instrument-limited linewidths.
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Submitted 25 January, 2023;
originally announced January 2023.
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Silicon nitride waveguides with intrinsic single-photon emitters for integrated quantum photonics
Authors:
Alexander Senichev,
Samuel Peana,
Zachariah O. Martin,
Omer Yesilyurt,
Demid Sychev,
Alexei S. Lagutchev,
Alexandra Boltasseva,
Vladimir M. Shalaev
Abstract:
The recent discovery of room temperature intrinsic single-photon emitters in silicon nitride (SiN) provides the unique opportunity for seamless monolithic integration of quantum light sources with the well-established SiN photonic platform. In this work, we develop a novel approach to realize planar waveguides made of low-autofluorescing SiN with intrinsic quantum emitters and demonstrate the sing…
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The recent discovery of room temperature intrinsic single-photon emitters in silicon nitride (SiN) provides the unique opportunity for seamless monolithic integration of quantum light sources with the well-established SiN photonic platform. In this work, we develop a novel approach to realize planar waveguides made of low-autofluorescing SiN with intrinsic quantum emitters and demonstrate the single-photon emission coupling into the waveguide mode. The observed emission coupling from these emitters is found to be in line with numerical simulations. The coupling of the single-photon emission to a waveguide mode is confirmed by second-order autocorrelation measurements of light outcoupled off the photonic chip by grating couplers. Fitting the second-order autocorrelation histogram yields $g^{(2)}(0)=0.35\pm0.12$ without spectral filtering or background correction with an outcoupled photon rate of $10^4$ counts per second. This demonstrates the first successful coupling of photons from intrinsic single-photon emitters in SiN to monolithically integrated waveguides made of the same material. The results of our work pave the way toward the realization of scalable, technology-ready quantum photonic integrated circuitry efficiently interfaced with solid-state quantum emitters.
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Submitted 17 May, 2022;
originally announced May 2022.
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Creating Quantum Emitters in Hexagonal Boron Nitride Deterministically on Chip-Compatible Substrates
Authors:
Xiaohui Xu,
Zachariah O. Martin,
Demid Sychev,
Alexei S. Lagutchev,
Yong Chen,
Takashi Taniguchi,
Kenji Watanabe,
Vladimir M. Shalaev,
Alexandra Boltasseva
Abstract:
Two-dimensional hexagonal boron nitride (hBN) that hosts bright room-temperature single-photon emitters (SPEs) is a promising material platform for quantum information applications. An important step towards the practical application of hBN is the on-demand, position-controlled generation of SPEs. Several strategies have been reported to achieve the deterministic creation of hBN SPEs. However, the…
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Two-dimensional hexagonal boron nitride (hBN) that hosts bright room-temperature single-photon emitters (SPEs) is a promising material platform for quantum information applications. An important step towards the practical application of hBN is the on-demand, position-controlled generation of SPEs. Several strategies have been reported to achieve the deterministic creation of hBN SPEs. However, they either rely on a substrate nanopatterning procedure that is not compatible with integrated photonic devices or utilize a radiation source that might cause unpredictable damage to hBN and underlying substrates. Here, we report a radiation- and lithography-free route to deterministically activate hBN SPEs by nanoindentation with an atomic force microscope (AFM) tip. The method is applied to thin hBN flakes (less than 25 nm in thickness) on flat silicon-dioxide-silicon substrates that can be readily integrated into on-chip photonic devices. The achieved SPEs yields are above 30% by utilizing multiple indent sizes, and a maximum yield of 36% is demonstrated for the indent size of around 400 nm. Our results mark an important step towards the deterministic creation and integration of hBN SPEs with photonic and plasmonic on-chip devices.
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Submitted 28 June, 2021;
originally announced June 2021.
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Machine Learning Framework for Quantum Sampling of Highly-Constrained, Continuous Optimization Problems
Authors:
Blake A. Wilson,
Zhaxylyk A. Kudyshev,
Alexander V. Kildishev,
Sabre Kais,
Vladimir M. Shalaev,
Alexandra Boltasseva
Abstract:
In recent years, there is a growing interest in using quantum computers for solving combinatorial optimization problems. In this work, we developed a generic, machine learning-based framework for map** continuous-space inverse design problems into surrogate quadratic unconstrained binary optimization (QUBO) problems by employing a binary variational autoencoder and a factorization machine. The f…
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In recent years, there is a growing interest in using quantum computers for solving combinatorial optimization problems. In this work, we developed a generic, machine learning-based framework for map** continuous-space inverse design problems into surrogate quadratic unconstrained binary optimization (QUBO) problems by employing a binary variational autoencoder and a factorization machine. The factorization machine is trained as a low-dimensional, binary surrogate model for the continuous design space and sampled using various QUBO samplers. Using the D-Wave Advantage hybrid sampler and simulated annealing, we demonstrate that by repeated resampling and retraining of the factorization machine, our framework finds designs that exhibit figures of merit exceeding those of its training set. We showcase the framework's performance on two inverse design problems by optimizing (i) thermal emitter topologies for thermophotovoltaic applications and (ii) diffractive meta-gratings for highly efficient beam steering. This technique can be further scaled to leverage future developments in quantum optimization to solve advanced inverse design problems for science and engineering applications.
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Submitted 5 May, 2021;
originally announced May 2021.
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Room temperature single-photon emitters in silicon nitride
Authors:
Alexander Senichev,
Zachariah O. Martin,
Samuel Peana,
Demid Sychev,
Xiaohui Xu,
Alexei S. Lagutchev,
Alexandra Boltasseva,
Vladimir M. Shalaev
Abstract:
Single-photon emitters are essential for enabling several emerging applications in quantum information technology, quantum sensing and quantum communication. Scalable photonic platforms capable of hosting intrinsic or directly embedded sources of single-photon emission are of particular interest for the realization of integrated quantum photonic circuits. Here, we report on the first-time observat…
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Single-photon emitters are essential for enabling several emerging applications in quantum information technology, quantum sensing and quantum communication. Scalable photonic platforms capable of hosting intrinsic or directly embedded sources of single-photon emission are of particular interest for the realization of integrated quantum photonic circuits. Here, we report on the first-time observation of room-temperature single-photon emitters in silicon nitride (SiN) films grown on silicon dioxide substrates. As SiN has recently emerged as one of the most promising materials for integrated quantum photonics, the proposed platform is suitable for scalable fabrication of quantum on-chip devices. Photophysical analysis reveals bright (>$10^5$ counts/s), stable, linearly polarized, and pure quantum emitters in SiN films with the value of the second-order autocorrelation function at zero time delay $g^{(2)}(0)$ below 0.2 at room temperatures. The emission is suggested to originate from a specific defect center in silicon nitride due to the narrow wavelength distribution of the observed luminescence peak. Single-photon emitters in silicon nitride have the potential to enable direct, scalable and low-loss integration of quantum light sources with the well-established photonic on-chip platform.
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Submitted 16 April, 2021;
originally announced April 2021.
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Electric field control of interaction between magnons and quantum spin defects
Authors:
Abhishek Bharatbhai Solanki,
Simeon I. Bogdanov,
Avinash Rustagi,
Neil R. Dilley,
Tingting Shen,
Mohammad Mushfiqur Rahman,
Wenqi Tong,
Punyashloka Debashis,
Zhihong Chen,
Joerg Appenzeller,
Yong P. Chen,
Vladimir M. Shalaev,
Pramey Upadhyaya
Abstract:
Hybrid systems coupling quantum spin defects (QSD) and magnons can enable unique spintronic device functionalities and probes for magnetism. Here, we add electric field control of magnon-QSD coupling to such systems by integrating ferromagnet-ferroelectric multiferroic with nitrogen-vacancy (NV) center spins. Combining quantum relaxometry with ferromagnetic resonance measurements and analytical mo…
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Hybrid systems coupling quantum spin defects (QSD) and magnons can enable unique spintronic device functionalities and probes for magnetism. Here, we add electric field control of magnon-QSD coupling to such systems by integrating ferromagnet-ferroelectric multiferroic with nitrogen-vacancy (NV) center spins. Combining quantum relaxometry with ferromagnetic resonance measurements and analytical modeling, we reveal that the observed electric-field tuning results from ferroelectric polarization control of the magnon-generated fields at the NV. Exploiting the demonstrated control, we also propose magnon-enhanced hybrid electric field sensors with improved sensitivity.
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Submitted 24 May, 2021; v1 submitted 2 December, 2020;
originally announced December 2020.
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Chip-compatible quantum plasmonic launcher
Authors:
Chin-Cheng Chiang,
Simeon I. Bogdanov,
Oksana A. Makarova,
Xiaohui Xu,
Soham Saha,
Deesha Shah,
Di Wang,
Alexei S. Lagutchev,
Alexander V. Kildishev,
Alexandra Boltasseva,
Vladimir M. Shalaev
Abstract:
Integrated on-demand single-photon sources are critical for the implementation of photonic quantum information processing systems. To enable practical quantum photonic devices, the emission rates of solid-state quantum emitters need to be substantially enhanced and the emitted signal must be directly coupled to an on-chip circuitry. The photon emission rate speed-up is best achieved via coupling t…
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Integrated on-demand single-photon sources are critical for the implementation of photonic quantum information processing systems. To enable practical quantum photonic devices, the emission rates of solid-state quantum emitters need to be substantially enhanced and the emitted signal must be directly coupled to an on-chip circuitry. The photon emission rate speed-up is best achieved via coupling to plasmonic antennas, while on-chip integration can be easily obtained by directly coupling emitters to photonic waveguides. The realization of practical devices requires that both the emission speed-up and efficient out-cou** are achieved in a single architecture. Here, we propose a novel platform that effectively combines on-chip compatibility with high radiative emission rates, a quantum plasmonic launcher. The proposed launchers contain single nitrogen-vacancy (NV) centers in nanodiamonds as quantum emitters that offer record-high average fluorescence lifetime shortening factors of about 7000 times. Nanodiamonds with single NV are sandwiched between two silver films that couple more than half of the emission into in-plane propagating surface plasmon polaritons. This simple, compact, and scalable architecture represents a crucial step towards the practical realization of high-speed on-chip quantum networks.
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Submitted 7 October, 2019;
originally announced October 2019.
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Rapid classification of quantum sources enabled by machine learning
Authors:
Zhaxylyk A. Kudyshev,
Simeon Bogdanov,
Theodor Isacsson,
Alexander V. Kildishev,
Alexandra Boltasseva,
Vladimir M. Shalaev
Abstract:
Deterministic nanoassembly may enable unique integrated on-chip quantum photonic devices. Such integration requires a careful large-scale selection of nanoscale building blocks such as solid-state single-photon emitters by the means of optical characterization. Second-order autocorrelation is a cornerstone measurement that is particularly time-consuming to realize on a large scale. We have impleme…
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Deterministic nanoassembly may enable unique integrated on-chip quantum photonic devices. Such integration requires a careful large-scale selection of nanoscale building blocks such as solid-state single-photon emitters by the means of optical characterization. Second-order autocorrelation is a cornerstone measurement that is particularly time-consuming to realize on a large scale. We have implemented supervised machine learning-based classification of quantum emitters as "single" or "not-single" based on their sparse autocorrelation data. Our method yields a classification accuracy of over 90% within an integration time of less than a second, realizing roughly a hundredfold speedup compared to the conventional, Levenberg-Marquardt approach. We anticipate that machine learning-based classification will provide a unique route to enable rapid and scalable assembly of quantum nanophotonic devices and can be directly extended to other quantum optical measurements.
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Submitted 27 December, 2019; v1 submitted 22 August, 2019;
originally announced August 2019.
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On-chip microwave-spin-plasmon interface (MSPI)
Authors:
Mikhail Y. Shalaginov,
Simeon I. Bogdanov,
Alexei S. Lagutchev,
Alexander V. Kildishev,
Alexandra Boltasseva,
Vladimir M. Shalaev
Abstract:
On-chip scalable integration represents a major challenge for practical quantum devices. One particular challenge is to implement on-chip optical readout of spins in diamond. This readout requires simultaneous application of optical and microwave fields along with an efficient collection of fluorescence. The readout is typically accomplished via bulk optics and macroscopic microwave transmission s…
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On-chip scalable integration represents a major challenge for practical quantum devices. One particular challenge is to implement on-chip optical readout of spins in diamond. This readout requires simultaneous application of optical and microwave fields along with an efficient collection of fluorescence. The readout is typically accomplished via bulk optics and macroscopic microwave transmission structures. We experimentally demonstrate an on-chip integrated structure for nitrogen vacancy (NV) spin-based applications, implemented in a single material layer with one patterning step. A nanodiamond with multiple NV centres is positioned at the end of the groove waveguide milled in a thick gold film. The gold film carries the microwave control signal while the groove waveguide acts as a fluorescence collector, partially filtering out the pump excitation. As a result, the device dimensions and fabrication complexity are substantially reduced. Our approach will foster further development of ultra-compact nanoscale quantum sensors and quantum information processing devices on a monolithic platform. NV centre-based nanoscale sensors are the most promising application of the developed interface.
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Submitted 16 May, 2019;
originally announced May 2019.
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Deterministic integration of single nitrogen-vacancy centers into nanopatch antennas
Authors:
Simeon I. Bogdanov,
Oksana A. Makarova,
Alexei S. Lagutchev,
Deesha Shah,
Chin-Cheng Chiang,
Soham Saha,
Alexandr S. Baburin,
Ilya A. Ryzhikov,
Ilya A. Rodionov,
Alexander V. Kildishev,
Alexandra Boltasseva,
Vladimir M. Shalaev
Abstract:
Quantum emitters coupled to plasmonic nanoantennas produce single photons at unprecedentedly high rates in ambient conditions. This enhancement of quantum emitters' radiation rate is based on the existence of optical modes with highly sub-diffraction volumes supported by plasmonic gap nanoantennas. Nanoantennas with gap sizes on the order of few nanometers have been typically produced using variou…
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Quantum emitters coupled to plasmonic nanoantennas produce single photons at unprecedentedly high rates in ambient conditions. This enhancement of quantum emitters' radiation rate is based on the existence of optical modes with highly sub-diffraction volumes supported by plasmonic gap nanoantennas. Nanoantennas with gap sizes on the order of few nanometers have been typically produced using various self-assembly or random assembly techniques. Yet, the difficulty of controllably fabricate nanoantennas with the smallest mode sizes coupled to pre-characterized single emitters until now has remained a serious issue plaguing the development of quantum plasmonic devices. We demonstrate the transfer of nanodiamonds with single nitrogen-vacancy (NV) centers to an epitaxial silver substrate and their subsequent deterministic coupling to plasmonic gap nanoantennas. Through fine control of the assembled nanoantenna geometry, a dramatic shortening of the NV fluorescence lifetime was achieved. We furthermore show that by preselecting NV centers exhibiting a photostable spin contrast, a coherent spin dynamics can be measured in the coupled configuration. The demonstrated approach opens unique applications of plasmon-enhanced quantum emitters for integrated quantum information and sensing devices.
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Submitted 15 February, 2019;
originally announced February 2019.
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Ultrabright room-temperature single-photon emission from nanodiamond nitrogen-vacancy centers with sub-nanosecond excited-state lifetime
Authors:
Simeon Bogdanov,
Mikhail Y. Shalaginov,
Alexei Lagutchev,
Chin-Cheng Chiang,
Deesha Shah,
Alexander S. Baburin,
Ilya A. Ryzhikov,
Ilya A. Rodionov,
Alexandra Boltasseva,
Vladimir M. Shalaev
Abstract:
Ultrafast emission rates obtained from quantum emitters coupled to plasmonic nanoantennas have recently opened fundamentally new possibilities in quantum information and sensing applications. Plasmonic nanoantennas greatly improve the brightness of quantum emitters by dramatically shortening their fluorescence lifetimes. Gap plasmonic nanocavities that support strongly confined modes are of partic…
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Ultrafast emission rates obtained from quantum emitters coupled to plasmonic nanoantennas have recently opened fundamentally new possibilities in quantum information and sensing applications. Plasmonic nanoantennas greatly improve the brightness of quantum emitters by dramatically shortening their fluorescence lifetimes. Gap plasmonic nanocavities that support strongly confined modes are of particular interest for such applications. We demonstrate single-photon emission from nitrogen-vacancy (NV) centers in nanodiamonds coupled to nanosized gap plasmonic cavities with internal mode volumes about 10 000 times smaller than the cubic vacuum wavelength. The resulting structures features sub-nanosecond NV excited-state lifetimes and detected photon rates up to 50 million counts per second. Analysis of the fluorescence saturation allows the extraction of the multi-order excitation rate enhancement provided by the nanoantenna. Efficiency analysis shows that the NV center is producing up to 0.25 billion photons per second in the far-field.
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Submitted 1 December, 2017; v1 submitted 26 November, 2017;
originally announced November 2017.
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Superconducting detector for visible and near-infrared quantum emitters
Authors:
V. Vorobyov,
A. Kazakov,
V. Soshenko,
A. Korneev,
M. Y. Shalaginov,
S. Bolshedvorskii,
V. N. Sorokin,
A. Divochiy,
Yu. Vakhtomin,
K. V. Smirnov,
B. Voronov,
V. M. Shalaev,
A. Akimov,
G. Goltsman
Abstract:
Further development of quantum emitter based communication and sensing applications intrinsically depends on the availability of robust single-photon detectors. Here, we demonstrate a new generation of superconducting single-photon detectors specifically optimized for the 500-1100 nm wavelength range, which overlaps with the emission spectrum of many interesting solid-state atom-like systems, such…
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Further development of quantum emitter based communication and sensing applications intrinsically depends on the availability of robust single-photon detectors. Here, we demonstrate a new generation of superconducting single-photon detectors specifically optimized for the 500-1100 nm wavelength range, which overlaps with the emission spectrum of many interesting solid-state atom-like systems, such as nitrogen-vacancy and silicon-vacancy centers in diamond. The fabricated detectors have a wide dynamic range (up to 350 million counts per second), low dark count rate (down to 0.1 counts per second), excellent jitter (62 ps), and the possibility of on-chip integration with a quantum emitter. In addition to performance characterization, we tested the detectors in real experimental conditions involving nanodiamond nitrogen-vacancy emitters enhanced by a hyperbolic metamaterial.
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Submitted 17 December, 2016;
originally announced December 2016.
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Resonant nonlinear optics of backward waves in negative-index metamaterials
Authors:
Alexander K. Popov,
Sergei A. Myslivets,
Vladimir M. Shalaev
Abstract:
The extraordinary properties of resonant four-wave mixing of backward waves in doped negative-index materials are investigated. The feasibility of independent engineering of negative refractive index and nonlinear optical response as well as quantum control of the nonlinear propagation process in such composites is shown due to the coherent energy transfer from the control to the signal field. L…
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The extraordinary properties of resonant four-wave mixing of backward waves in doped negative-index materials are investigated. The feasibility of independent engineering of negative refractive index and nonlinear optical response as well as quantum control of the nonlinear propagation process in such composites is shown due to the coherent energy transfer from the control to the signal field. Laser-induced transparency, quantum switching, frequency-tunable narrow-band filtering, amplification, and realizing a miniature mirrorless optical parametric generator of the entangled backward and ordinary waves are among the possible applications of the investigated processes.
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Submitted 14 August, 2008;
originally announced August 2008.
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Mirrorless Negative-index Parametric Micro-oscillator
Authors:
Alexander K. Popov,
Sergei A. Myslivets,
Vladimir M. Shalaev
Abstract:
The feasibility and extraordinary properties of mirrorless parametric oscillations in strongly absorbing negative-index metamaterials are shown. They stem from the backwardness of electromagnetic waves inherent to this type of metamaterials.
The feasibility and extraordinary properties of mirrorless parametric oscillations in strongly absorbing negative-index metamaterials are shown. They stem from the backwardness of electromagnetic waves inherent to this type of metamaterials.
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Submitted 22 July, 2008;
originally announced July 2008.
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Four-wave mixing, quantum control and compensating losses in doped negative-index photonic metamaterials
Authors:
Alexander K. Popov,
Sergey A. Myslivets,
Thomas F. George,
Vladimir M. Shalaev
Abstract:
The possibility of compensating absorption in negative-index metatamterials (NIMs) doped by resonant nonlinear-optical centers is shown. The role of quantum interference and extraordinary properties of four-wave parametric amplification of counter-propagating electromagnetic waves in NIMs are discussed.
The possibility of compensating absorption in negative-index metatamterials (NIMs) doped by resonant nonlinear-optical centers is shown. The role of quantum interference and extraordinary properties of four-wave parametric amplification of counter-propagating electromagnetic waves in NIMs are discussed.
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Submitted 13 August, 2007; v1 submitted 1 August, 2007;
originally announced August 2007.
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Negative-Index Metamaterials: Second-Harmonic Generation, Manley-Rowe Relations and Parametric Amplification
Authors:
A. K. Popov,
Vladimir M. Shalaev
Abstract:
Second harmonic generation and optical parametric amplification in negative-index metamaterials (NIMs) are studied. The opposite directions of the wave vector and the Poynting vector in NIMs results in a "backward" phase-matching condition, causing significant changes in the Manley-Rowe relations and spatial distributions of the coupled field intensities. It is shown that absorption in NIMs can…
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Second harmonic generation and optical parametric amplification in negative-index metamaterials (NIMs) are studied. The opposite directions of the wave vector and the Poynting vector in NIMs results in a "backward" phase-matching condition, causing significant changes in the Manley-Rowe relations and spatial distributions of the coupled field intensities. It is shown that absorption in NIMs can be compensated by backward optical parametric amplification. The possibility of distributed-feedback parametric oscillation with no cavity has been demonstrated. The feasibility of the generation of entangled pairs of left- and right-handed counter-propagating photons is discussed.
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Submitted 9 January, 2006;
originally announced January 2006.
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Four-wave mixing at maximum coherence and eliminated Doppler broadening controlled with the driving fields
Authors:
A. K. Popov,
Alexander S. Bayev,
Thomas F. George,
Vladimir M. Shalaev
Abstract:
New feasibity of coherent quantum control of four-wave mixing processes in a resonant Doppler-broadened medium are studied. We propose a technique which enables one to enhance the quantum efficiency of nonlinear optical conversion. At the same time, it allows one to decrease the required intensities of the fundamental beams compared to those necessary in the approach based on coherent population…
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New feasibity of coherent quantum control of four-wave mixing processes in a resonant Doppler-broadened medium are studied. We propose a technique which enables one to enhance the quantum efficiency of nonlinear optical conversion. At the same time, it allows one to decrease the required intensities of the fundamental beams compared to those necessary in the approach based on coherent population trap**. The major outcomes of the analysis are illustrated with numerical simulation addressed within a practical medium.
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Submitted 8 August, 2000;
originally announced August 2000.
