Integrated optical addressing of an ion qubit
Authors:
Karan K. Mehta,
Colin D. Bruzewicz,
Robert McConnell,
Rajeev J. Ram,
Jeremy M. Sage,
John Chiaverini
Abstract:
The long coherence times and strong Coulomb interactions afforded by trapped ion qubits have enabled realizations of the necessary primitives for quantum information processing (QIP), and indeed the highest-fidelity quantum operations in any qubit to date. But while light delivery to each individual ion in a system is essential for general quantum manipulations and readout, experiments so far have…
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The long coherence times and strong Coulomb interactions afforded by trapped ion qubits have enabled realizations of the necessary primitives for quantum information processing (QIP), and indeed the highest-fidelity quantum operations in any qubit to date. But while light delivery to each individual ion in a system is essential for general quantum manipulations and readout, experiments so far have employed optical systems cumbersome to scale to even a few tens of qubits. Here we demonstrate lithographically defined nanophotonic waveguide devices for light routing and ion addressing fully integrated within a surface-electrode ion trap chip. Ion qubits are addressed at multiple locations via focusing grating couplers emitting through openings in the trap electrodes to ions trapped 50 $μ$m above the chip; using this light we perform quantum coherent operations on the optical qubit transition in individual $^{88}$Sr$^+$ ions. The grating focuses the beam to a diffraction-limited spot near the ion position with a 2 $μ$m 1/$e^2$-radius along the trap axis, and we measure crosstalk errors between $10^{-2}$ and $4\times10^{-4}$ at distances 7.5-15 $μ$m from the beam center. Owing to the scalability of the planar fabrication employed, together with the tight focusing and stable alignment afforded by optics integration within the trap chip, this approach presents a path to creating the optical systems required for large-scale trapped-ion QIP.
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Submitted 23 July, 2016; v1 submitted 19 October, 2015;
originally announced October 2015.
Ion traps fabricated in a CMOS foundry
Authors:
K. K. Mehta,
A. M. Eltony,
C. D. Bruzewicz,
I. L. Chuang,
R. J. Ram,
J. M. Sage,
J. Chiaverini
Abstract:
We demonstrate trap** in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With…
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We demonstrate trap** in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trap** is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size. This is the first demonstration of scalable quantum computing hardware, in any modality, utilizing a commercial CMOS process, and it opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.
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Submitted 13 June, 2014;
originally announced June 2014.
