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A Room-Temperature Solid-State Maser Amplifier
Authors:
Tom Day,
Maya Isarov,
William J. Pappas,
Brett C. Johnson,
Hiroshi Abe,
Takeshi Ohshima,
Dane R. McCamey,
Arne Laucht,
Jarryd J. Pla
Abstract:
Masers once represented the state-of-the-art in low noise microwave amplification technology, but eventually became obsolete due to their need for cryogenic cooling. Masers based on solid-state spin systems perform most effectively as amplifiers, since they provide a large density of spins and can therefore operate at relatively high powers. Whilst solid-state masers oscillators have been demonstr…
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Masers once represented the state-of-the-art in low noise microwave amplification technology, but eventually became obsolete due to their need for cryogenic cooling. Masers based on solid-state spin systems perform most effectively as amplifiers, since they provide a large density of spins and can therefore operate at relatively high powers. Whilst solid-state masers oscillators have been demonstrated at room temperature, continuous-wave amplification in these systems has only ever been realized at cryogenic temperatures. Here we report on a continuous-wave solid-state maser amplifier operating at room temperature. We achieve this feat using a practical setup that includes an ensemble of nitrogen-vacancy center spins in a diamond crystal, a strong permanent magnet and simple laser diode. We describe important amplifier characteristics including gain, bandwidth, compression power and noise temperature and discuss the prospects of realizing a room-temperature near-quantum-noise-limited amplifier with this system. Finally, we show that in a different mode of operation the spins can be used to cool the system noise in an external circuit to cryogenic levels, all without the requirement for physical cooling.
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Submitted 5 June, 2024; v1 submitted 13 May, 2024;
originally announced May 2024.
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Selective Single and Double-Mode Quantum Limited Amplifier
Authors:
Abdul Mohamed,
Elham Zohari,
Jarryd J. Pla,
Paul E. Barclay,
Shabir Barzanjeh
Abstract:
A quantum-limited amplifier enables the amplification of weak signals while introducing minimal noise dictated by the principles of quantum mechanics. These amplifiers serve a broad spectrum of applications in quantum computing, including fast and accurate readout of superconducting qubits and spins, as well as various uses in quantum sensing and metrology. Parametric amplification, primarily deve…
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A quantum-limited amplifier enables the amplification of weak signals while introducing minimal noise dictated by the principles of quantum mechanics. These amplifiers serve a broad spectrum of applications in quantum computing, including fast and accurate readout of superconducting qubits and spins, as well as various uses in quantum sensing and metrology. Parametric amplification, primarily developed using Josephson junctions, has evolved into the leading technology for highly effective microwave measurements within quantum circuits. Despite their significant contributions, these amplifiers face fundamental limitations, such as their inability to handle high powers, sensitivity to parasitic magnetic fields, and particularly their limitation to operate only at millikelvin temperatures. To tackle these challenges, here we experimentally develop a novel quantum-limited amplifier based on superconducting kinetic inductance and present an extensive theoretical model to describe this nonlinear coupled-mode system. Our device surpasses the conventional constraints associated with Josephson junction amplifiers by operating at much higher temperatures up to 4.5 K. With two distinct spectral modes and tunability through bias current, this amplifier can operate selectively in both single and double-mode amplification regimes near the quantum noise limit. Utilizing a nonlinear thin film exhibiting kinetic inductance, our device attains gain exceeding 50 dB in a single-mode and 32 dB in a double-mode configuration while adding 0.35 input-referred quanta of noise. Importantly, this amplifier eliminates the need for Josephson junctions, resulting in significantly higher power handling capabilities than Josephson-based amplifiers. It also demonstrates resilience in the presence of magnetic fields, offers a straightforward design, and enhances reliability.
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Submitted 7 June, 2024; v1 submitted 19 November, 2023;
originally announced November 2023.
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Strong Microwave Squeezing Above 1 Tesla and 1 Kelvin
Authors:
Arjen Vaartjes,
Anders Kringhøj,
Wyatt Vine,
Tom Day,
Andrea Morello,
Jarryd J. Pla
Abstract:
Squeezed states of light have been used extensively to increase the precision of measurements, from the detection of gravitational waves to the search for dark matter. In the optical domain, high levels of vacuum noise squeezing are possible due to the availability of low loss optical components and high-performance squeezers. At microwave frequencies, however, limitations of the squeezing devices…
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Squeezed states of light have been used extensively to increase the precision of measurements, from the detection of gravitational waves to the search for dark matter. In the optical domain, high levels of vacuum noise squeezing are possible due to the availability of low loss optical components and high-performance squeezers. At microwave frequencies, however, limitations of the squeezing devices and the high insertion loss of microwave components makes squeezing vacuum noise an exceptionally difficult task. Here we demonstrate a new record for the direct measurement of microwave squeezing. We use an ultra low loss setup and weakly-nonlinear kinetic inductance parametric amplifiers to squeeze microwave noise 7.8(2) dB below the vacuum level. The amplifiers exhibit a resilience to magnetic fields and permit the demonstration of record squeezing levels inside fields of up to 2 T. Finally, we exploit the high critical temperature of our amplifiers to squeeze a warm thermal environment, achieving vacuum level noise at a temperature of 1.8 K. These results enable experiments that combine squeezing with magnetic fields and permit quantum-limited microwave measurements at elevated temperatures, significantly reducing the complexity and cost of the cryogenic systems required for such experiments.
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Submitted 14 November, 2023;
originally announced November 2023.
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Latched Detection of Zeptojoule Spin Echoes with a Kinetic Inductance Parametric Oscillator
Authors:
Wyatt Vine,
Anders Kringhøj,
Mykhailo Savytskyi,
Daniel Parker,
Thomas Schenkel,
Brett C. Johnson,
Jeffrey C. McCallum,
Andrea Morello,
Jarryd J. Pla
Abstract:
When strongly pumped at twice their resonant frequency, non-linear resonators develop a high-amplitude intracavity field, a phenomenon known as parametric self-oscillations. The boundary over which this instability occurs can be extremely sharp and thereby presents an opportunity for realizing a detector. Here we operate such a device based on a superconducting microwave resonator whose non-linear…
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When strongly pumped at twice their resonant frequency, non-linear resonators develop a high-amplitude intracavity field, a phenomenon known as parametric self-oscillations. The boundary over which this instability occurs can be extremely sharp and thereby presents an opportunity for realizing a detector. Here we operate such a device based on a superconducting microwave resonator whose non-linearity is engineered from kinetic inductance. The device indicates the absorption of low-power microwave wavepackets by transitioning to a self-oscillating state. Using calibrated wavepackets we measure the detection efficiency with zeptojoule energy wavepackets. We then apply it to measurements of electron spin resonance, using an ensemble of $^{209}$Bi donors in silicon that are inductively coupled to the resonator. We achieve a latched-readout of the spin signal with an amplitude that is five hundred times greater than the underlying spin echoes.
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Submitted 6 November, 2023;
originally announced November 2023.
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In-situ amplification of spin echoes within a kinetic inductance parametric amplifier
Authors:
Wyatt Vine,
Mykhailo Savytskyi,
Daniel Parker,
James Slack-Smith,
Thomas Schenkel,
Jeffrey C. McCallum,
Brett C. Johnson,
Andrea Morello,
Jarryd J. Pla
Abstract:
The use of superconducting micro-resonators in combination with quantum-limited Josephson parametric amplifiers has in recent years lead to more than four orders of magnitude improvement in the sensitivity of pulsed Electron Spin Resonance (ESR) measurements. So far, the microwave resonators and amplifiers have been designed as separate components, largely due to the incompatibility of Josephson j…
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The use of superconducting micro-resonators in combination with quantum-limited Josephson parametric amplifiers has in recent years lead to more than four orders of magnitude improvement in the sensitivity of pulsed Electron Spin Resonance (ESR) measurements. So far, the microwave resonators and amplifiers have been designed as separate components, largely due to the incompatibility of Josephson junction-based devices with even moderate magnetic fields. This has led to complex spectrometers that operate under strict environments, creating technical barriers for the widespread adoption of the technique. Here we circumvent this issue by inductively coupling an ensemble of spins directly to a weakly nonlinear microwave resonator, which is engineered from a magnetic field-resilient thin superconducting film. We perform pulsed ESR measurements with a $1$~pL effective mode volume and amplify the resulting spin signal using the same device, ultimately achieving a sensitivity of $2.8 \times 10^3$ spins in a single-shot Hahn echo measurement at a temperature of 400 mK. We demonstrate the combined functionalities at fields as large as 254~mT, highlighting the technique's potential for application under more conventional ESR operating conditions.
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Submitted 6 December, 2022; v1 submitted 21 November, 2022;
originally announced November 2022.
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An electrically-driven single-atom `flip-flop' qubit
Authors:
Rostyslav Savytskyy,
Tim Botzem,
Irene Fernandez de Fuentes,
Benjamin Joecker,
Jarryd J. Pla,
Fay E. Hudson,
Kohei M. Itoh,
Alexander M. Jakob,
Brett C. Johnson,
David N. Jamieson,
Andrew S. Dzurak,
Andrea Morello
Abstract:
The spins of atoms and atom-like systems are among the most coherent objects in which to store quantum information. However, the need to address them using oscillating magnetic fields hinders their integration with quantum electronic devices. Here we circumvent this hurdle by operating a single-atom `flip-flop' qubit in silicon, where quantum information is encoded in the electron-nuclear states o…
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The spins of atoms and atom-like systems are among the most coherent objects in which to store quantum information. However, the need to address them using oscillating magnetic fields hinders their integration with quantum electronic devices. Here we circumvent this hurdle by operating a single-atom `flip-flop' qubit in silicon, where quantum information is encoded in the electron-nuclear states of a phosphorus donor. The qubit is controlled using local electric fields at microwave frequencies, produced within a metal-oxide-semiconductor device. The electrical drive is mediated by the modulation of the electron-nuclear hyperfine coupling, a method that can be extended to many other atomic and molecular systems. These results pave the way to the construction of solid-state quantum processors where dense arrays of atoms can be controlled using only local electric fields.
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Submitted 2 January, 2023; v1 submitted 9 February, 2022;
originally announced February 2022.
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Development of an Undergraduate Quantum Engineering Degree
Authors:
A. S. Dzurak,
J. Epps,
A. Laucht,
R. Malaney,
A. Morello,
H. I. Nurdin,
J. J. Pla,
A. Saraiva,
C. H. Yang
Abstract:
Quantum technology is exploding. Computing, communication, and sensing are just a few areas likely to see breakthroughs in the next few years. Worldwide, national governments, industries, and universities are moving to create a new class of workforce - the Quantum Engineers. Demand for such engineers is predicted to be in the tens of thousands within a five-year timescale. However, how best to tra…
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Quantum technology is exploding. Computing, communication, and sensing are just a few areas likely to see breakthroughs in the next few years. Worldwide, national governments, industries, and universities are moving to create a new class of workforce - the Quantum Engineers. Demand for such engineers is predicted to be in the tens of thousands within a five-year timescale. However, how best to train this next generation of engineers is far from obvious. Quantum mechanics - long a pillar of traditional physics undergraduate degrees - must now be merged with traditional engineering offerings. This paper discusses the history, development, and first year of operation of the world's first undergraduate degree in quantum engineering. The main purpose of the paper is to inform the wider debate, now being held by many institutions worldwide, on how best to formally educate the Quantum Engineer.
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Submitted 24 October, 2021;
originally announced October 2021.
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A near-ideal degenerate parametric amplifier
Authors:
Daniel J. Parker,
Mykhailo Savytskyi,
Wyatt Vine,
Arne Laucht,
Timothy Duty,
Andrea Morello,
Arne L. Grimsmo,
Jarryd J. Pla
Abstract:
Degenerate parametric amplifiers (DPAs) exhibit the unique property of phase-sensitive gain and can be used to noiselessly amplify small signals or squeeze field fluctuations beneath the vacuum level. In the microwave domain, these amplifiers have been utilized to measure qubits in elementary quantum processors, search for dark matter, facilitate high-sensitivity spin resonance spectroscopy and ha…
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Degenerate parametric amplifiers (DPAs) exhibit the unique property of phase-sensitive gain and can be used to noiselessly amplify small signals or squeeze field fluctuations beneath the vacuum level. In the microwave domain, these amplifiers have been utilized to measure qubits in elementary quantum processors, search for dark matter, facilitate high-sensitivity spin resonance spectroscopy and have even been proposed as the building blocks for a measurement based quantum computer. Until now, microwave DPAs have almost exclusively been made from nonlinear Josephson junctions, which exhibit high-order nonlinearities that limit their dynamic range and squeezing potential. In this work we investigate a new microwave DPA that exploits a nonlinearity engineered from kinetic inductance. The device has a simple design and displays a dynamic range that is four orders of magnitude greater than state-of-the-art Josephson DPAs. We measure phase sensitive gains up to 50 dB and demonstrate a near-quantum-limited noise performance. Additionally, we show that the higher-order nonlinearities that limit other microwave DPAs are almost non-existent for this amplifier, which allows us to demonstrate its exceptional squeezing potential by measuring the deamplification of coherent states by as much as 26 dB.
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Submitted 26 August, 2021; v1 submitted 23 August, 2021;
originally announced August 2021.
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Fast coherent control of an NV- spin ensemble using a KTaO3 dielectric resonator at cryogenic temperatures
Authors:
Hyma H. Vallabhapurapu,
James P. Slack-Smith,
Vikas K. Sewani,
Chris Adambukulam,
Andrea Morello,
Jarryd J. Pla,
Arne Laucht
Abstract:
Microwave delivery to samples in a cryogenic environment can pose experimental challenges such as restricting optical access, space constraints and heat generation. Moreover, existing solutions that overcome various experimental restrictions do not necessarily provide a large, homogeneous oscillating magnetic field over macroscopic lengthscales, which is required for control of spin ensembles or f…
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Microwave delivery to samples in a cryogenic environment can pose experimental challenges such as restricting optical access, space constraints and heat generation. Moreover, existing solutions that overcome various experimental restrictions do not necessarily provide a large, homogeneous oscillating magnetic field over macroscopic lengthscales, which is required for control of spin ensembles or fast gate operations in scaled-up quantum computing implementations. Here we show fast and coherent control of a negatively charged nitrogen vacancy spin ensemble by taking advantage of the high permittivity of a KTaO3 dielectric resonator at cryogenic temperatures. We achieve Rabi frequencies of up to 48 MHz, with the total field-to-power conversion ratio $C_{\rm P} = $ 9.66 mT/$\sqrt{\rm W}$ ($\approx191$ MHz/$\sqrt{\rm W}$). We use the nitrogen vacancy center spin ensemble to probe the quality factor, the coherent enhancement, and the spatial distribution of the magnetic field inside the diamond sample. The key advantages of the dielectric resonator utilised in this work are: ease of assembly, in-situ tuneability, a high magnetic field conversion efficiency, a low volume footprint, and optical transparency. This makes KTaO3 dielectric resonators a promising platform for the delivery of microwave fields for the control of spins in various materials at cryogenic temperatures.
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Submitted 29 August, 2021; v1 submitted 14 May, 2021;
originally announced May 2021.
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Spatially-resolved decoherence of donor spins in silicon strained by a metallic electrode
Authors:
V. Ranjan,
B. Albanese,
E. Albertinale,
E. Billaud,
D. Flanigan,
J. J. Pla,
T. Schenkel,
D. Vion,
D. Esteve,
E. Flurin,
J. J. L. Morton,
Y. M. Niquet,
P. Bertet
Abstract:
Electron spins are amongst the most coherent solid-state systems known, however, to be used in devices for quantum sensing and information processing applications, they must be typically placed near interfaces. Understanding and mitigating the impacts of such interfaces on the coherence and spectral properties of electron spins is critical to realize such applications, but is also challenging: inf…
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Electron spins are amongst the most coherent solid-state systems known, however, to be used in devices for quantum sensing and information processing applications, they must be typically placed near interfaces. Understanding and mitigating the impacts of such interfaces on the coherence and spectral properties of electron spins is critical to realize such applications, but is also challenging: inferring such data from single-spin studies requires many measurements to obtain meaningful results, while ensemble measurements typically give averaged results that hide critical information. Here, we report a comprehensive study of the coherence of near-surface bismuth donor spins in 28-silicon at millikelvin temperatures. In particular, we use strain-induced frequency shifts caused by a metallic electrode to make spatial maps of spin coherence as a function of depth and position relative to the electrode. By measuring magnetic-field-insensitive clock transitions we separate magnetic noise caused by surface spins from charge noise. Our results include quantitative models of the strain-split spin resonance spectra and extraction of paramagnetic impurity concentrations at the silicon surface. The interplay of these decoherence mechanisms for such near-surface electron spins is critical for their application in quantum technologies, while the combination of the strain splitting and clock transition extends the coherence lifetimes by up to two orders of magnitude, reaching up to 300 ms at a mean depth of only 100nm. The technique we introduce here to spatially map coherence in near-surface ensembles is directly applicable to other spin systems of active interest, such as defects in diamond, silicon carbide, and rare earth ions in optical crystals.
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Submitted 12 January, 2021;
originally announced January 2021.
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Full configuration interaction simulations of exchange-coupled donors in silicon using multi-valley effective mass theory
Authors:
Benjamin Joecker,
Andrew D. Baczewski,
John K. Gamble,
Jarryd J. Pla,
André Saraiva,
Andrea Morello
Abstract:
Donor spin in silicon have achieved record values of coherence times and single-qubit gate fidelities. The next stage of development involves demonstrating high-fidelity two-qubit logic gates, where the most natural coupling is the exchange interaction. To aid the efficient design of scalable donor-based quantum processors, we model the two-electron wave function using a full configuration interac…
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Donor spin in silicon have achieved record values of coherence times and single-qubit gate fidelities. The next stage of development involves demonstrating high-fidelity two-qubit logic gates, where the most natural coupling is the exchange interaction. To aid the efficient design of scalable donor-based quantum processors, we model the two-electron wave function using a full configuration interaction method within a multi-valley effective mass theory. We exploit the high computational efficiency of our code to investigate the exchange interaction, valley population, and electron densities for two phosphorus donors in a wide range of lattice positions, orientations, and as a function of applied electric fields. The outcomes are visualized with interactive images where donor positions can be swept while watching the valley and orbital components evolve accordingly. Our results provide a physically intuitive and quantitatively accurate understanding of the placement and tuning criteria necessary to achieve high-fidelity two-qubit gates with donors in silicon.
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Submitted 11 December, 2020;
originally announced December 2020.
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Donor spins in silicon for quantum technologies
Authors:
Andrea Morello,
Jarryd J. Pla,
Patrice Bertet,
David N. Jamieson
Abstract:
Dopant atoms are ubiquitous in semiconductor technologies, providing the tailored electronic properties that underpin the modern digital information era. Harnessing the quantum nature of these atomic-scale objects represents a new and exciting technological revolution. In this article we describe the use of ion-implanted donor spins in silicon for quantum technologies. We review how to fabricate a…
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Dopant atoms are ubiquitous in semiconductor technologies, providing the tailored electronic properties that underpin the modern digital information era. Harnessing the quantum nature of these atomic-scale objects represents a new and exciting technological revolution. In this article we describe the use of ion-implanted donor spins in silicon for quantum technologies. We review how to fabricate and operate single-atom spin qubits in silicon, obtaining some of the most coherent solid-state qubits, and we discuss pathways to scale up these qubits to build large quantum processors. Heavier group-V donors with large nuclear spins display electric quadrupole couplings that enable nuclear electric resonance, quantum chaos and strain sensing. Donor ensembles can be coupled to microwave cavities to develop hybrid quantum Turing machines. Counted, deterministic implantation of single donors, combined with novel methods for precision placement, will allow the integration of individual donors spins with industry-standard silicon fabrication processes, making implanted donors a prime physical platform for the second quantum revolution.
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Submitted 8 September, 2020;
originally announced September 2020.
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Coherent electrical control of a single high-spin nucleus in silicon
Authors:
Serwan Asaad,
Vincent Mourik,
Benjamin Joecker,
Mark A. I. Johnson,
Andrew D. Baczewski,
Hannes R. Firgau,
Mateusz T. Mądzik,
Vivien Schmitt,
Jarryd J. Pla,
Fay E. Hudson,
Kohei M. Itoh,
Jeffrey C. McCallum,
Andrew S. Dzurak,
Arne Laucht,
Andrea Morello
Abstract:
Nuclear spins are highly coherent quantum objects. In large ensembles, their control and detection via magnetic resonance is widely exploited, e.g. in chemistry, medicine, materials science and mining. Nuclear spins also featured in early ideas and demonstrations of quantum information processing. Scaling up these ideas requires controlling individual nuclei, which can be detected when coupled to…
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Nuclear spins are highly coherent quantum objects. In large ensembles, their control and detection via magnetic resonance is widely exploited, e.g. in chemistry, medicine, materials science and mining. Nuclear spins also featured in early ideas and demonstrations of quantum information processing. Scaling up these ideas requires controlling individual nuclei, which can be detected when coupled to an electron. However, the need to address the nuclei via oscillating magnetic fields complicates their integration in multi-spin nanoscale devices, because the field cannot be localized or screened. Control via electric fields would resolve this problem, but previous methods relied upon transducing electric signals into magnetic fields via the electron-nuclear hyperfine interaction, which severely affects the nuclear coherence. Here we demonstrate the coherent quantum control of a single antimony (spin-7/2) nucleus, using localized electric fields produced within a silicon nanoelectronic device. The method exploits an idea first proposed in 1961 but never realized experimentally with a single nucleus. Our results are quantitatively supported by a microscopic theoretical model that reveals how the purely electrical modulation of the nuclear electric quadrupole interaction, in the presence of lattice strain, results in coherent nuclear spin transitions. The spin dephasing time, 0.1 seconds, surpasses by orders of magnitude those obtained via methods that require a coupled electron spin for electrical drive. These results show that high-spin quadrupolar nuclei could be deployed as chaotic models, strain sensors and hybrid spin-mechanical quantum systems using all-electrical controls. Integrating electrically controllable nuclei with quantum dots could pave the way to scalable nuclear- and electron-spin-based quantum computers in silicon that operate without the need for oscillating magnetic fields.
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Submitted 3 June, 2019;
originally announced June 2019.
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Linear hyperfine tuning of donor spins in silicon using hydrostatic strain
Authors:
John Mansir,
Pierandrea Conti,
Zai** Zeng,
Jarryd J. Pla,
Patrice Bertet,
Michael W. Swift,
Chris G. Van de Walle,
Mike L. W. Thewalt,
Benoit Sklenard,
Yann-Michel Niquet,
John J. L. Morton
Abstract:
We experimentally study the coupling of Group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts which are linear in strain, in contrast to the quadratic dependence predicted by the valley repopulation model (VRM), and therefore orders of magnitude greater than that predicted by the VRM for small strains $|\varepsilon| < 10^{-5}$. Through both tight-binding…
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We experimentally study the coupling of Group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts which are linear in strain, in contrast to the quadratic dependence predicted by the valley repopulation model (VRM), and therefore orders of magnitude greater than that predicted by the VRM for small strains $|\varepsilon| < 10^{-5}$. Through both tight-binding and first principles calculations we find that these shifts arise from a linear tuning of the donor hyperfine interaction term by the hydrostatic component of strain and achieve semi-quantitative agreement with the experimental values. Our results provide a framework for making quantitative predictions of donor spins in silicon nanostructures, such as those being used to develop silicon-based quantum processors and memories. The strong spin-strain coupling we measure (up to 150~GHz per strain, for Bi-donors in Si), offers a method for donor spin tuning --- shifting Bi donor electron spins by over a linewidth with a hydrostatic strain of order $10^{-6}$ --- as well as opportunities for coupling to mechanical resonators.
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Submitted 23 March, 2018; v1 submitted 2 October, 2017;
originally announced October 2017.
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Inductive-detection electron-spin resonance spectroscopy with $\mathbf{65}\,$spins$/\sqrt{\text{Hz}}$ sensitivity
Authors:
S. Probst,
A. Bienfait,
P. Campagne-Ibarcq,
J. J. Pla,
B. Albanese,
J. F. Da Silva Barbosa,
T. Schenkel,
D. Vion,
D. Esteve,
K. Mølmer,
J. J. L. Morton,
R. Heeres,
P. Bertet
Abstract:
We report electron spin resonance spectroscopy measurements performed at millikelvin temperatures in a custom-built spectrometer comprising a superconducting micro-resonator at $7$ GHz and a Josephson parametric amplifier. Owing to the small ${\sim}10^{-12}λ^3$ magnetic resonator mode volume and to the low noise of the parametric amplifier, the spectrometer sensitivity reaches $260\pm40$ spins$/$e…
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We report electron spin resonance spectroscopy measurements performed at millikelvin temperatures in a custom-built spectrometer comprising a superconducting micro-resonator at $7$ GHz and a Josephson parametric amplifier. Owing to the small ${\sim}10^{-12}λ^3$ magnetic resonator mode volume and to the low noise of the parametric amplifier, the spectrometer sensitivity reaches $260\pm40$ spins$/$echo and $65\pm10$ $\mathrm{spins}/\sqrt{\text{Hz}}$, respectively.
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Submitted 30 August, 2017;
originally announced August 2017.
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Exploring quantum chaos with a single nuclear spin
Authors:
Vincent Mourik,
Serwan Asaad,
Hannes Firgau,
Jarryd J. Pla,
Catherine Holmes,
Gerard J. Milburn,
Jeffrey C. McCallum,
Andrea Morello
Abstract:
Most classical dynamical systems are chaotic. The trajectories of two identical systems prepared in infinitesimally different initial conditions diverge exponentially with time. Quantum systems, instead, exhibit quasi-periodicity due to their discrete spectrum. Nonetheless, the dynamics of quantum systems whose classical counterparts are chaotic are expected to show some features that resemble cha…
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Most classical dynamical systems are chaotic. The trajectories of two identical systems prepared in infinitesimally different initial conditions diverge exponentially with time. Quantum systems, instead, exhibit quasi-periodicity due to their discrete spectrum. Nonetheless, the dynamics of quantum systems whose classical counterparts are chaotic are expected to show some features that resemble chaotic motion. Among the many controversial aspects of the quantum-classical boundary, the emergence of chaos remains among the least experimentally verified. Time-resolved observations of quantum chaotic dynamics are particularly rare, and as yet unachieved in a single particle, where the subtle interplay between chaos and quantum measurement could be explored at its deepest levels. We present here a realistic proposal to construct a chaotic driven top from the nuclear spin of a single donor atom in silicon, in the presence of a nuclear quadrupole interaction. This system is exquisitely measurable and controllable, and possesses extremely long intrinsic quantum coherence times, allowing for the observation of subtle dynamical behavior over extended periods. We show that signatures of chaos are expected to arise for experimentally realizable parameters of the system, allowing the study of the relation between quantum decoherence and classical chaos, and the observation of dynamical tunneling.
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Submitted 9 October, 2018; v1 submitted 14 March, 2017;
originally announced March 2017.
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Magnetic resonance with squeezed microwaves
Authors:
A. Bienfait,
P. Campagne-Ibarcq,
A. Holm-Kiilerich,
X. Zhou,
S. Probst,
J. J. Pla,
T. Schenkel,
D. Vion,
D. Esteve,
J. J. L. Morton,
K. Moelmer,
P. Bertet
Abstract:
Vacuum fluctuations of the electromagnetic field set a fundamental limit to the sensitivity of a variety of measurements, including magnetic resonance spectroscopy. We report the use of squeezed microwave fields, which are engineered quantum states of light for which fluctuations in one field quadrature are reduced below the vacuum level, to enhance the detection sensitivity of an ensemble of elec…
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Vacuum fluctuations of the electromagnetic field set a fundamental limit to the sensitivity of a variety of measurements, including magnetic resonance spectroscopy. We report the use of squeezed microwave fields, which are engineered quantum states of light for which fluctuations in one field quadrature are reduced below the vacuum level, to enhance the detection sensitivity of an ensemble of electronic spins at millikelvin temperatures.} By shining a squeezed vacuum state on the input port of a microwave resonator containing the spins, we obtain a $1.2$\,dB noise reduction at the spectrometer output compared to the case of a vacuum input. This result constitutes a proof of principle of the application of quantum metrology to magnetic resonance spectroscopy.
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Submitted 27 October, 2017; v1 submitted 11 October, 2016;
originally announced October 2016.
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Strain-induced spin resonance shifts in silicon devices
Authors:
J. J. Pla,
A. Bienfait,
G. Pica,
J. Mansir,
F. A. Mohiyaddin,
Z. Zeng,
Y. M. Niquet,
A. Morello,
T. Schenkel,
J. J. L. Morton,
P. Bertet
Abstract:
In spin-based quantum information processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance shifts can be large compared to intrinsic spin line-widths and it is therefore important to study, understand and model such effects in order to better predict d…
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In spin-based quantum information processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance shifts can be large compared to intrinsic spin line-widths and it is therefore important to study, understand and model such effects in order to better predict device performance. Here we investigate a sample of bismuth donor spins implanted in a silicon chip, on top of which a superconducting aluminium micro-resonator has been fabricated. The on-chip resonator provides two functions: first, it produces local strain in the silicon due to the larger thermal contraction of the aluminium, and second, it enables sensitive electron spin resonance spectroscopy of donors close to the surface that experience this strain. Through finite-element strain simulations we are able to reconstruct key features of our experiments, including the electron spin resonance spectra. Our results are consistent with a recently discovered mechanism for producing shifts of the hyperfine interaction for donors in silicon, which is linear with the hydrostatic component of an applied strain.
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Submitted 9 January, 2018; v1 submitted 25 August, 2016;
originally announced August 2016.
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Controlling spin relaxation with a cavity
Authors:
A. Bienfait,
J. J. Pla,
Y. Kubo,
X. Zhou,
M. Stern,
C. C. Lo,
C. D. Weis,
T. Schenkel,
D. Vion,
D. Esteve,
J. J. L. Morton,
P. Bertet
Abstract:
Spontaneous emission of radiation is one of the fundamental mechanisms by which an excited quantum system returns to equilibrium. For spins, however, spontaneous emission is generally negligible compared to other non-radiative relaxation processes because of the weak coupling between the magnetic dipole and the electromagnetic field. In 1946, Purcell realized that the spontaneous emission rate can…
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Spontaneous emission of radiation is one of the fundamental mechanisms by which an excited quantum system returns to equilibrium. For spins, however, spontaneous emission is generally negligible compared to other non-radiative relaxation processes because of the weak coupling between the magnetic dipole and the electromagnetic field. In 1946, Purcell realized that the spontaneous emission rate can be strongly enhanced by placing the quantum system in a resonant cavity -an effect which has since been used extensively to control the lifetime of atoms and semiconducting heterostructures coupled to microwave or optical cavities, underpinning single-photon sources. Here we report the first application of these ideas to spins in solids. By coupling donor spins in silicon to a superconducting microwave cavity of high quality factor and small mode volume, we reach for the first time the regime where spontaneous emission constitutes the dominant spin relaxation mechanism. The relaxation rate is increased by three orders of magnitude when the spins are tuned to the cavity resonance, showing that energy relaxation can be engineered and controlled on-demand. Our results provide a novel and general way to initialise spin systems into their ground state, with applications in magnetic resonance and quantum information processing. They also demonstrate that, contrary to popular belief, the coupling between the magnetic dipole of a spin and the electromagnetic field can be enhanced up to the point where quantum fluctuations have a dramatic effect on the spin dynamics; as such our work represents an important step towards the coherent magnetic coupling of individual spins to microwave photons.
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Submitted 27 August, 2015; v1 submitted 25 August, 2015;
originally announced August 2015.
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Reaching the quantum limit of sensitivity in electron spin resonance
Authors:
A. Bienfait,
J. J. Pla,
Y. Kubo,
M. Stern,
X. Zhou,
C. C. Lo,
C. D. Weis,
T. Schenkel,
M. L. W. Thewalt,
D. Vion,
D. Esteve,
B. Julsgaard,
K. Moelmer,
J. J. L. Morton,
P. Bertet
Abstract:
We report pulsed electron-spin resonance (ESR) measurements on an ensemble of Bismuth donors in Silicon cooled at 10mK in a dilution refrigerator. Using a Josephson parametric microwave amplifier combined with high-quality factor superconducting micro-resonators cooled at millikelvin temperatures, we improve the state-of-the-art sensitivity of inductive ESR detection by nearly 4 orders of magnitud…
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We report pulsed electron-spin resonance (ESR) measurements on an ensemble of Bismuth donors in Silicon cooled at 10mK in a dilution refrigerator. Using a Josephson parametric microwave amplifier combined with high-quality factor superconducting micro-resonators cooled at millikelvin temperatures, we improve the state-of-the-art sensitivity of inductive ESR detection by nearly 4 orders of magnitude. We demonstrate the detection of 1700 bismuth donor spins in silicon within a single Hahn echo with unit signal-to-noise (SNR) ratio, reduced to just 150 spins by averaging a single Carr-Purcell-Meiboom-Gill sequence. This unprecedented sensitivity reaches the limit set by quantum fluctuations of the electromagnetic field instead of thermal or technical noise, which constitutes a novel regime for magnetic resonance.
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Submitted 24 July, 2015;
originally announced July 2015.
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Coherent Control of a Single Silicon-29 Nuclear Spin Qubit
Authors:
Jarryd J. Pla,
Fahd A. Mohiyaddin,
Kuan Y. Tan,
Juan P. Dehollain,
Rajib Rahman,
Gerhard Klimeck,
David N. Jamieson,
Andrew S. Dzurak,
Andrea Morello
Abstract:
Magnetic fluctuations caused by the nuclear spins of a host crystal are often the leading source of decoherence for many types of solid-state spin qubit. In group-IV materials, the spin-bearing nuclei are sufficiently rare that it is possible to identify and control individual host nuclear spins. This work presents the first experimental detection and manipulation of a single $^{29}$Si nuclear spi…
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Magnetic fluctuations caused by the nuclear spins of a host crystal are often the leading source of decoherence for many types of solid-state spin qubit. In group-IV materials, the spin-bearing nuclei are sufficiently rare that it is possible to identify and control individual host nuclear spins. This work presents the first experimental detection and manipulation of a single $^{29}$Si nuclear spin. The quantum non-demolition (QND) single-shot readout of the spin is demonstrated, and a Hahn echo measurement reveals a coherence time of $T_2 = 6.3(7)$ ms - in excellent agreement with bulk experiments. Atomistic modeling combined with extracted experimental parameters provides possible lattice sites for the $^{29}$Si atom under investigation. These results demonstrate that single $^{29}$Si nuclear spins could serve as a valuable resource in a silicon spin-based quantum computer.
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Submitted 6 August, 2014;
originally announced August 2014.
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A single-atom electron spin qubit in silicon
Authors:
Jarryd J. Pla,
Kuan Y. Tan,
Juan P. Dehollain,
Wee H. Lim,
John J. L. Morton,
David N. Jamieson,
Andrew S. Dzurak,
Andrea Morello
Abstract:
A single atom is the prototypical quantum system, and a natural candidate for a quantum bit - the elementary unit of a quantum computer. Atoms have been successfully used to store and process quantum information in electromagnetic traps, as well as in diamond through the use of the NV-center point defect. Solid state electrical devices possess great potential to scale up such demonstrations from f…
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A single atom is the prototypical quantum system, and a natural candidate for a quantum bit - the elementary unit of a quantum computer. Atoms have been successfully used to store and process quantum information in electromagnetic traps, as well as in diamond through the use of the NV-center point defect. Solid state electrical devices possess great potential to scale up such demonstrations from few-qubit control to larger scale quantum processors. In this direction, coherent control of spin qubits has been achieved in lithographically-defined double quantum dots in both GaAs and Si. However, it is a formidable challenge to combine the electrical measurement capabilities of engineered nanostructures with the benefits inherent to atomic spin qubits. Here we demonstrate the coherent manipulation of an individual electron spin qubit bound to a phosphorus donor atom in natural silicon, measured electrically via single-shot readout. We use electron spin resonance to drive Rabi oscillations, while a Hahn echo pulse sequence reveals a spin coherence time (T2) exceeding 200 μs. This figure is expected to become even longer in isotopically enriched 28Si samples. Together with the use of a device architecture that is compatible with modern integrated circuit technology, these results indicate that the electron spin of a single phosphorus atom in silicon is an excellent platform on which to build a scalable quantum computer.
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Submitted 20 May, 2013;
originally announced May 2013.
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High-fidelity readout and control of a nuclear spin qubit in silicon
Authors:
Jarryd J. Pla,
Kuan Y. Tan,
Juan P. Dehollain,
Wee H. Lim,
John J. L. Morton,
Floris A. Zwanenburg,
David N. Jamieson,
Andrew S. Dzurak,
Andrea Morello
Abstract:
A single nuclear spin holds the promise of being a long-lived quantum bit or quantum memory, with the high fidelities required for fault-tolerant quantum computing. We show here that such promise could be fulfilled by a single phosphorus (31P) nuclear spin in a silicon nanostructure. By integrating single-shot readout of the electron spin with on-chip electron spin resonance, we demonstrate the qu…
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A single nuclear spin holds the promise of being a long-lived quantum bit or quantum memory, with the high fidelities required for fault-tolerant quantum computing. We show here that such promise could be fulfilled by a single phosphorus (31P) nuclear spin in a silicon nanostructure. By integrating single-shot readout of the electron spin with on-chip electron spin resonance, we demonstrate the quantum non-demolition, electrical single-shot readout of the nuclear spin, with readout fidelity better than 99.8% - the highest for any solid-state qubit. The single nuclear spin is then operated as a qubit by applying coherent radiofrequency (RF) pulses. For an ionized 31P donor we find a nuclear spin coherence time of 60 ms and a 1-qubit gate control fidelity exceeding 98%. These results demonstrate that the dominant technology of modern electronics can be adapted to host a complete electrical measurement and control platform for nuclear spin-based quantum information processing.
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Submitted 31 January, 2013;
originally announced February 2013.
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Single-shot readout of an electron spin in silicon
Authors:
Andrea Morello,
Jarryd J. Pla,
Floris A. Zwanenburg,
Kok W. Chan,
Hans Huebl,
Mikko Mottonen,
Christopher D. Nugroho,
Changyi Yang,
Jessica A. van Donkelaar,
Andrew D. C. Alves,
David N. Jamieson,
Christopher C. Escott,
Lloyd C. L. Hollenberg,
Robert G. Clark,
Andrew S. Dzurak
Abstract:
The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for the further scaling of microprocessors, it provides the potential for radical innovations in the form of spin-based quantum computers and spintronic devices. An electron spin in Si can represent a well-isolated quantum bit…
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The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for the further scaling of microprocessors, it provides the potential for radical innovations in the form of spin-based quantum computers and spintronic devices. An electron spin in Si can represent a well-isolated quantum bit with long coherence times because of the weak spin-orbit coupling and the possibility to eliminate nuclear spins from the bulk crystal. However, the control of single electrons in Si has proved challenging, and has so far hindered the observation and manipulation of a single spin. Here we report the first demonstration of single-shot, time-resolved readout of an electron spin in Si. This has been performed in a device consisting of implanted phosphorus donors coupled to a metal-oxide-semiconductor single-electron transistor - compatible with current microelectronic technology. We observed a spin lifetime approaching 1 second at magnetic fields below 2 T, and achieved spin readout fidelity better than 90%. High-fidelity single-shot spin readout in Si opens the path to the development of a new generation of quantum computing and spintronic devices, built using the most important material in the semiconductor industry.
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Submitted 24 May, 2010; v1 submitted 13 March, 2010;
originally announced March 2010.